CN202600259U - Coupled system for coupling multi-path discrete semiconductor laser into single optical fiber - Google Patents
Coupled system for coupling multi-path discrete semiconductor laser into single optical fiber Download PDFInfo
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- CN202600259U CN202600259U CN 201220018995 CN201220018995U CN202600259U CN 202600259 U CN202600259 U CN 202600259U CN 201220018995 CN201220018995 CN 201220018995 CN 201220018995 U CN201220018995 U CN 201220018995U CN 202600259 U CN202600259 U CN 202600259U
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- heat sink
- reflecting prism
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Abstract
The utility model, which belongs to the laser technology field, discloses a coupled system for coupling multi-path discrete semiconductor laser into a single optical fiber. The system comprises multi-path discrete semiconductor lasers, two stepped heat sinks (3) and (4), a focusing lens, and a coupled fiber. The focusing lens and the coupled fiber are arranged coaxially. The semiconductor lasers that are divided into two columns are respectively installed on the stepped planes of the stepped heat sinks (3) and (4); and PN junction planes of the semiconductor lasers are in parallel with the stepped planes that the semiconductor lasers are located at. A fast-axis collimating lens and a reflection prism that enables light beams outputted by one semiconductor laser to be reflected to the incident plane of the focusing lens towards the same direction are arranged in front of each of the semiconductor lasers; the input planes or output planes of the reflection prisms are cylindrical surfaces that carry out slow-axis collimation on the output light beams of corresponding semiconductor lasers; and the optical paths between the output terminals of the semiconductor lasers and exiting planes of corresponding reflection prisms are equal. According to the system provided by the utility model, coupling of the multi-path discrete semiconductor lasers can be realized flexibly.
Description
Technical field
The utility model belongs to laser technology field, relates to a kind of light beam that multichannel discrete semiconductor laser instrument is sent and merges the coupled system that is coupled into simple optical fiber through shaping with after arranging again.
Background technology
Semiconductor laser through optical fiber output has application fields.No matter be laser scalpel, or industrial lasers mark, cutting or all solid laser and fiber laser, all need have good beam quality, high power density and use LASER Light Source flexibly.Semiconductor laser is coupled into simple optical fiber exports again, can satisfy this demand.The method that realizes high power density optical fiber output laser has two kinds: the one, and the Output optical power density of the single semiconductor laser of raising; The 2nd, with the light combination back output of a plurality of semiconductor laser chip outputs.
The growth of semiconductor laser chip material, the lifting of equipment level and the progress of manufacture craft level are depended in the success of first method, realize that at present difficulty is bigger.Second method mainly depends on the improvement of coupling technique, and is simple relatively in the realization, is to obtain the main path high-power and output of super high power laser at present.Its implementation has two kinds: a kind of is to adopt the array assembly; Exactly semiconductor laser is made into the monolithic array form in the chip one-level; Making its parallel running, is a branch of integrated optical source output through shaping optical system with the output light of each laser instrument in array permutation and combination again; Another kind method is to adopt many discrete semiconductor chip of laser to arrange with parallel connection or series system, and with the light that all chips are exported separately, the process shaping merges to forms integrated optical source output together.Above-mentioned dual mode respectively has quality, but discrete lasers can be at the coupling row filter that advances, and can adopt separate refrigeration, and therefore its reliability of assembly, consistance and the life-span after many laser instruments combinations all is better than the assembly that uses array.
Two kinds of methods are arranged again on the merging mode.One of which, with each independently in chip of laser or the array output light of single laser element be coupled into an optical fiber separately, again multifiber is bundled into a branch of output.This coupling scheme are simple relatively, but the useful area of optical fiber output light is bigger, and optical power density is not high enough, can not obtain specific beam mode.Its two, adopt the special optical system that an optical fiber is arranged and be coupled into to the output light of each unit in all chip of laser or the array again, thereby obtain higher power density, and can obtain the particular beam pattern that needs.
Because must being installed in, the discrete semiconductor chip of laser has on a certain size heat sink; If directly coupling is arranged and focused on to the output beam of a plurality of semiconductor lasers; Usually owing to receive the restriction of each chip and its heat sink volume; The combined light beam volume is bigger, is difficult to obtain the optical fiber coupling output of little core diameter high power density.For reducing the spatial volume size of combined light beam, must take certain measure.More existing schemes are arranged the light beam of a plurality of discrete semiconductor laser instrument outputs through taking various special measures again; Make the spatial volume of beam combination enough little; The scioptics group is coupled into optical fiber again, and these handle general Installation and Debugging more complicated, is not easy to realize.Like No. 6324230, the United States Patent (USP) of Polaroid company, the U.S. Pat 2007/0116071A1 of Nlight Corporation etc.
The utility model content
To the problem that exists in the prior art; The purpose of the utility model is to provide a kind of multichannel discrete semiconductor laser coupled is gone into the coupled system of simple optical fiber, through this system architecture can obtain to have small volume, the laser assembly of ultra high power, very high power density.
The technical scheme of the utility model is:
A kind of multichannel discrete semiconductor laser coupled is gone into the coupled system of simple optical fiber, it is characterized in that comprising multichannel discrete semiconductor laser instrument, ladder is heat sink 1 (3), ladder is heat sink 2 (4), a condenser lens, a coupled fiber; Said condenser lens and the coaxial placement of said coupled fiber; Said semiconductor laser is divided on two row be installed on respectively that said ladder is heat sink 1 (3), ladder is heat sink 2 (4) the ladder plane, and the PN junction junction plane of semiconductor laser and its place ladder plane parallel; Be equipped with a fast axis collimation lens, before each said semiconductor laser and make the semiconductor laser output beam reflex to the reflecting prism of the said condenser lens plane of incidence with same direction, the input face of this reflecting prism or output face are for carrying out the cylinder of slow axis collimation to corresponding semiconductor laser output beam; Each said semiconductor laser output terminal is to the equivalent optical path of its corresponding reflecting prism exit facet.
Further, said ladder is heat sink 1 (3) to be placed for the ladder direction with said ladder heat sink 2 (4) relatively, and lays respectively at the symmetria bilateralis placement of said condenser lens optical axis.
Further, be positioned at the semiconductor laser of same said ladder on heat sink and be spaced, on the vertical direction on said ladder plane, have equal difference in height in that said condenser lens optical axis direction is first-class.
Further, the output optical axis of each said semiconductor laser is parallel to each other and perpendicular to the optical axis of said condenser lens.
Further, the minimum value of said difference in height is that said semiconductor laser output beam is through shining the width of light beam of the quick shaft direction on the said reflecting prism behind the fast axis collimation.
Further, the height on the lowest-order ladder plane of said ladder heat sink 2 (4) is higher than the height on said ladder heat sink 1 (3) high-order ladder plane.
Further, the pairing reflecting prism of semiconductor laser on the said ladder heat sink 2 (4) is installed in a reflecting prism seat; Wherein, the top of said reflecting prism seat is positioned at heat sink 1 (3) the front upper place of said ladder and has a plurality of ladders plane, each ladder Plane Installation one said reflecting prism.
Further, each said semiconductor laser is fixed in the transition heat sink (2) through the mode of being welded, and said transition is heat sink (2) is welded and is fixed on the heat sink cascaded surface of ladder.
Further, said semiconductor laser is identical wavelength or different wavelength of laser device.
Said fast axis collimation lens is the microtrabeculae lens, or cylindrical mirror.
The structure of the utility model is as shown in Figure 1,
The symmetrical of two row ladders are heat sink 1 (3), ladder is heat sink 2 (4) relative condenser lenses (8) is placed, and ladder is in the opposite direction, and it is 2 (4) higher that a row ladder is heat sink, and it is 1 (3) on the low side that a row ladder is heat sink, blocks each other to avoid each light path.Each road discrete semiconductor laser instrument (1) is fixed in the transition heat sink (2) through the mode of being welded respectively; Microtrabeculae lens (6) are installed in the place ahead of each laser instrument (1) makes light beam at the quick shaft direction collimation; Afterwards transition heat sink (2) is welded on be fixed on that ladder is heat sink 1 (3), ladder is heat sink 2 (4) the cascaded surface; Each level of 2 (4) that ladder is heat sink 1 (3), ladder is heat sink is all parallel and measure-alike on Y (the Y axle is the output optical axis direction of semiconductor laser) and Z (the Z axle is the slow-axis direction of semiconductor laser) direction; Promptly level is high is a Lx (the x axle is the quick shaft direction of semiconductor laser) for spacings at different levels, and each level semiconductor laser instrument (1) that ladder is heat sink 1 (3), ladder is heat sink on 2 (4) all has the reflecting prism (7) of a correspondence, is a total reflection prism; The plane of incidence or exit facet are processed into the cylinder to light beam slow axis collimation; All reflecting prisms (7) are measure-alike, and reflecting surface is parallel mutually and angled with the output optical axis of semiconductor lasers at different levels (1), after the light beam irradiates behind the fast axis collimation goes up to reflecting prism (7); Semiconductor laser (1) output optical axis is deflected; The plane of incidence or the exit facet of reflecting prism (7) are cylinder simultaneously, accomplish the slow axis collimation of light beam, form to be parallel to each other and equally spaced synthetic light beam.For the semiconductor laser (1) of different wave length, make its operating distance that satisfies the slow axis collimation require to get final product through the distance or the cylinder radius of reflecting prism (7) that changes between semiconductor laser (1) and the reflecting prism (7).The minimum value of ladder height difference Lx is that light beam is through shining the width of light beam of the directions X on the reflecting prism (7) behind the fast axis collimation; So just make laser beam at fast axle, slow axis both direction all by collimation; Hot spot forms the collimated light beam that merges after arranging again, be coupled to output in the optical fiber (9) via condenser lens (8) again.Utilize this structure, the wavelength of laser instrument can be identical also can be different, have very strong dirigibility; Ladder is heat sink 1, ladder is heat sink, and 2 ladder quantity can be chosen according to the power of laser general power and single laser instrument flexibly.Its ladder upper limit depends on the spot width of single laser instrument behind fast axis collimation, allows radiating condition etc. by maximum diameter of hole, the ladder heat sink 1 of the focus lens group of aberration restriction and the maximum of ladder heat sink 2.
Prior art is compared, and the effect of the utility model is:
Two prescriptions that the utility model adopted are heat sink 2 to opposite ladder heat sink 1 and ladder, can reduce the length of total system, realize the coupling of multichannel discrete semiconductor laser instrument more flexibly.
Description of drawings
Fig. 1 is the synoptic diagram of the utility model embodiment 1;
Fig. 2 is the synoptic diagram of the utility model embodiment 2;
Among the figure: 1. semiconductor laser, 2. transition is heat sink, and 3. heat sink 1,4 ladder of ladder is heat sink 2,5. reflecting prism seat, 6. microtrabeculae lens (collimation lens), 7. reflecting prism, 8. condenser lens, 9. optical fiber.
Embodiment
Below in conjunction with accompanying drawing the utility model is explained in further detail.
Embodiment 1:
As shown in Figure 1, being coupled into an optical fiber with ten semiconductor lasers is example, has provided the integrally-built synoptic diagram of the utility model.
With high-precision micropositioning stage and immobilization material with collimation lens; Be microtrabeculae lens (6) be installed to each the place ahead that has been fixed on the semiconductor laser (1) in the transition heat sink (2) (laser instrument (1) can direct sintering or the heat sink mode of transition be fixed on heat sink on), make laser beam at the quick shaft direction collimation.Calibrate the depth of parallelism and collimation between each light beam through detecting far-field spot in the installation process.
With all transition heat sink (2) that install microtrabeculae lens (6) and laser instrument (1) be welded heat sink 1 (3) at ladder, ladder is heat sink on 2 (4), and laser instrument (1) is connected electrode, it can be that to connect also can be parallel connection that electrode connects.
Each level at reflecting prism seat (5) goes up installation reflecting prism (7) step by step; Adjust with high-precision five dimension adjustment racks and suitable clamp clamps reflecting prism (7); Make the optical axis of semiconductor laser (1) turn back 90 °, and make the slow-axis direction of semiconductor laser (1) reach collimation.In the process of Installation and Debugging reflecting prism (7); Calibrate the laser beam depth of parallelism each other and the collimation of hot spot of outputs at different levels through detecting far-field spot, can not block the light path of back one-level through the reflecting prism (7) that detects output power assurance previous stage; Wherein, the exit facet of reflecting prism (7) is processed into the cylinder to light beam slow axis collimation.
Each level at ladder heat sink 1 (3) goes up installation reflecting prism (7) step by step; Adjust with high-precision five dimension adjustment racks and suitable clamp clamps reflecting prism (7); Make the optical axis of semiconductor laser (1) turn back 90 °, and make the slow-axis direction of semiconductor laser (1) reach collimation.In the process of Installation and Debugging reflecting prism (7); Calibrate the laser beam depth of parallelism each other and the collimation of hot spot of outputs at different levels through detecting far-field spot, can not block the light path of back one-level through the reflecting prism (7) that detects output power assurance previous stage; Wherein, the exit facet of reflecting prism (7) is processed into the cylinder to light beam slow axis collimation.
Condenser lens (8) and optical fiber (9) are installed in the light path; Condenser lens (8) and optical fiber (9) can be that mounted in advance coaxial module also can be discrete; The two is adjusted through high-precision five dimension adjustment racks and suitable clamp clamps; Up to obtaining the highest optical fiber output power, the two is fixed with the mode of welding or viscose.So just accomplished the adjustment of light path.
In this structure, adopt optical fiber core diameter 105um～1mm, the optical fiber of numerical aperture 0.1-0.4, optical maser wavelength is from 405nm-2um, and average coupling efficiency is higher than 85%.
Embodiment 2:
As shown in Figure 2, being coupled into an optical fiber with ten semiconductor lasers is example, has provided the integrally-built synoptic diagram of the utility model.
With high-precision micropositioning stage and immobilization material with collimation lens; Be microtrabeculae lens (6) be installed to each the place ahead that has been fixed on the semiconductor laser (1) in the transition heat sink (2) (laser instrument (1) can direct sintering or the heat sink mode of transition be fixed on heat sink on), make laser beam at the quick shaft direction collimation.Calibrate the depth of parallelism and collimation between each light beam through detecting far-field spot in the installation process.
With all transition heat sink (2) that install microtrabeculae lens (6) and laser instrument (1) be welded heat sink 1 (3) at ladder, ladder is heat sink on 2 (4), and laser instrument (1) is connected electrode, it can be that to connect also can be parallel connection that electrode connects.
Each level at reflecting prism seat (5) goes up installation reflecting prism (7) step by step; Adjust with high-precision five dimension adjustment racks and suitable clamp clamps reflecting prism (7); Make the optical axis of semiconductor laser (1) turn back 90 °, and make the slow-axis direction of semiconductor laser (1) reach collimation.In the process of Installation and Debugging reflecting prism (7); Calibrate the laser beam depth of parallelism each other and the collimation of hot spot of outputs at different levels through detecting far-field spot, can not block the light path of back one-level through the reflecting prism (7) that detects output power assurance previous stage; Wherein, the plane of incidence of reflecting prism (7) is processed into the cylinder to light beam slow axis collimation.
Each level at ladder heat sink 1 (3) goes up installation reflecting prism (7) step by step; Adjust with high-precision five dimension adjustment racks and suitable clamp clamps reflecting prism (7); Make the optical axis of semiconductor laser (1) turn back 90 °, and make the slow-axis direction of semiconductor laser (1) reach collimation.In the process of Installation and Debugging reflecting prism (7); Calibrate the laser beam depth of parallelism each other and the collimation of hot spot of outputs at different levels through detecting far-field spot, can not block the light path of back one-level through the reflecting prism (7) that detects output power assurance previous stage; Wherein, the plane of incidence of reflecting prism (7) is processed into the cylinder to light beam slow axis collimation.
Condenser lens (8) and optical fiber (9) are installed in the light path; Condenser lens (8) and optical fiber (9) can be that mounted in advance coaxial module also can be discrete; The two is adjusted through high-precision five dimension adjustment racks and suitable clamp clamps; Up to obtaining the highest optical fiber output power, the two is fixed with the mode of welding or viscose.So just accomplished the adjustment of light path.
In this structure, adopt optical fiber core diameter 105um～1mm, the optical fiber of numerical aperture 0.1-0.4, optical maser wavelength is from 405nm-2um, and average coupling efficiency is higher than 85%.
Claims (10)
1. one kind multichannel discrete semiconductor laser coupled gone into the coupled system of simple optical fiber, it is characterized in that comprising multichannel discrete semiconductor laser instrument, ladder is heat sink 1 (3), ladder is heat sink 2 (4), a condenser lens, a coupled fiber; Said condenser lens and the coaxial placement of said coupled fiber; Said semiconductor laser is divided on two row be installed on respectively that said ladder is heat sink 1 (3), ladder is heat sink 2 (4) the ladder plane, and the PN junction junction plane of semiconductor laser and its place ladder plane parallel; Be equipped with a fast axis collimation lens, before each said semiconductor laser and make the semiconductor laser output beam reflex to the reflecting prism of the said condenser lens plane of incidence with same direction, the input face of this reflecting prism or output face are for carrying out the cylinder of slow axis collimation to corresponding semiconductor laser output beam; Each said semiconductor laser output terminal is to the equivalent optical path of its corresponding reflecting prism exit facet.
2. coupled system as claimed in claim 1 is characterized in that said ladder heat sink 1 (3) and said ladder heat sink 2 (4) place for the ladder direction relatively, and lays respectively at the symmetria bilateralis placement of said condenser lens optical axis.
3. coupled system as claimed in claim 2 is characterized in that being positioned at the semiconductor laser of same said ladder on heat sink and is spaced, on the vertical direction on said ladder plane, has equal difference in height in that said condenser lens optical axis direction is first-class.
4. coupled system as claimed in claim 3, the output optical axis that it is characterized in that each said semiconductor laser are parallel to each other and perpendicular to the optical axis of said condenser lens.
5. coupled system as claimed in claim 3, the minimum value that it is characterized in that said difference in height are that said semiconductor laser output beam is through shining the width of light beam of the quick shaft direction on the said reflecting prism behind the fast axis collimation.
6. like the arbitrary described coupled system of claim 1 to 5, it is characterized in that the height on the lowest-order ladder plane of said ladder heat sink 2 (4) is higher than the height on said ladder heat sink 1 (3) high-order ladder plane.
7. coupled system as claimed in claim 6 is characterized in that the pairing reflecting prism of semiconductor laser on the said ladder heat sink 2 (4) is installed in a reflecting prism seat; Wherein, the top of said reflecting prism seat is positioned at heat sink 1 (3) the front upper place of said ladder and has a plurality of ladders plane, each ladder Plane Installation one said reflecting prism.
8. coupled system as claimed in claim 1 is characterized in that each said semiconductor laser is fixed in the transition heat sink (2) through the mode of being welded, and said transition is heat sink (2) is welded and is fixed on the heat sink cascaded surface of ladder.
9. coupled system as claimed in claim 1 is characterized in that said semiconductor laser is identical wavelength or different wavelength of laser device.
10. coupled system as claimed in claim 1 is characterized in that said fast axis collimation lens is the microtrabeculae lens, or cylindrical mirror.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220018995 CN202600259U (en) | 2012-01-16 | 2012-01-16 | Coupled system for coupling multi-path discrete semiconductor laser into single optical fiber |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220018995 CN202600259U (en) | 2012-01-16 | 2012-01-16 | Coupled system for coupling multi-path discrete semiconductor laser into single optical fiber |
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| CN104009395A (en) * | 2014-05-06 | 2014-08-27 | 深圳市博锐浦科技有限公司 | Optical fiber coupling module with multiple single-diode semiconductor lasers |
| CN104836113A (en) * | 2015-05-18 | 2015-08-12 | 浙江合波光学科技有限公司 | Multi-single-tube high-power fiber-coupled semiconductor laser |
| CN105071196A (en) * | 2015-07-21 | 2015-11-18 | 北京杏林睿光科技有限公司 | Narrow linewidth beam combination module and multi-wavelength Raman laser provided with same |
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| CN105929495A (en) * | 2016-07-11 | 2016-09-07 | 山西傲维光视光电科技有限公司 | Multi-fiber laser light source coupling system |
| CN109100835A (en) * | 2017-06-20 | 2018-12-28 | 深圳联品激光技术有限公司 | More high-power optical fiber coupled lasers of single tube |
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- 2012-01-16 CN CN 201220018995 patent/CN202600259U/en not_active Expired - Lifetime
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| CN105071196A (en) * | 2015-07-21 | 2015-11-18 | 北京杏林睿光科技有限公司 | Narrow linewidth beam combination module and multi-wavelength Raman laser provided with same |
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