CN111613969A - Semiconductor laser beam combining device - Google Patents
Semiconductor laser beam combining device Download PDFInfo
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- CN111613969A CN111613969A CN201910145021.5A CN201910145021A CN111613969A CN 111613969 A CN111613969 A CN 111613969A CN 201910145021 A CN201910145021 A CN 201910145021A CN 111613969 A CN111613969 A CN 111613969A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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Abstract
The invention discloses a semiconductor laser beam combining device, which comprises: the stepped heat sink is a plurality of stepped surfaces with sequentially-increased heights; each step surface of the stepped heat sink is provided with: the transition heat sink is welded on the stepped heat sink; the laser tube core is welded on the transition heat sink; the fast axis collimating lens is arranged in front of the laser tube core; the slow axis collimating lens is arranged in front of the fast axis collimating lens; the right-angle isosceles reflecting prism is arranged in front of the slow-axis collimating lens and changes the direction of a laser light path; and the focusing lens is arranged in front of the stepped heat sink. The semiconductor laser beam combining device provided by the invention adopts the right-angle isosceles reflecting prism, so that the number of reflecting mirrors is reduced, and the complexity of the system is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a semiconductor laser beam combining device.
Background
The semiconductor laser obtains comparatively extensive application in fields such as laser communication, optical storage, optical gyro, laser printing, range finding and radar, but develop to a relatively unsatisfactory in the field of high power fiber output laser processing application, its main reason is that the output power of semiconductor laser is not enough, the light beam quality is relatively poor, so improve the light beam quality and the power of semiconductor laser and be the important research direction at present, single-tube semiconductor laser is as a packaging form of semiconductor laser, compare in semiconductor laser Bar, have heat dissipation characteristic better, the life-span is longer, advantages such as light-emitting Bar width, because single-tube semiconductor laser independently encapsulates every light-emitting unit of semiconductor laser, if want the high-power laser output of realization, must adopt a plurality of single tubes to close the beam. The laser beam combining process includes fast axis collimation → slow axis collimation → plane mirror or prism reflection → convex lens focusing → optical fiber coupling, and because the quality of the semiconductor laser beam is poor and the quality of the laser beam is not matched in the fast axis and slow axis directions, the semiconductor laser beam is coupled and focused into the optical fiber, and the quality of the semiconductor laser beam can be effectively improved through flexible transmission of the optical fiber.
The semiconductor laser has a small volume, but the lenses and the adjusting devices thereof occupy a large space, so that the volume of equipment is increased greatly, and the adjusting devices become very complicated due to the more lenses, and the adjustability and the working stability of the whole device are also poor, so that the proposal is only in a laboratory stage at present, and the realization of the commercialization is difficult, and therefore, the simplification of the semiconductor laser beam combining device is very important.
Disclosure of Invention
Technical problem to be solved
Aiming at the defect that the multi-single-tube semiconductor laser beam combining device in the prior art is difficult to realize high-power output, the simple multi-single-tube semiconductor laser beam combining device is provided, and high-power output is realized.
(II) technical scheme
The technical scheme adopted by the invention for solving the technical problem is to provide a semiconductor laser beam combining device, which comprises two structures, wherein one structure comprises the following components:
the stepped heat sink is a plurality of stepped surfaces with sequentially-increased heights and is welded on a refrigerator;
furthermore, the height of each step of the stepped heat sink is 1-3mm, and the stepped heat sink is made of a heat-conducting metal material;
and, each step face of the ladder heat sink is provided with: the laser comprises a transition heat sink, a laser tube core welded on the transition heat sink, a fast axis collimating lens, a slow axis collimating lens and a right-angle isosceles reflecting prism. Wherein:
the transition heat sink is welded on the stepped surface of the stepped heat sink and is made of aluminum nitride;
the fast axis collimation lens is arranged in front of the laser tube core, receives the laser emitted by the laser tube core and performs primary collimation;
further, the fast axis collimating lens is a plano-convex lens made of glass BK7, the longitudinal axis direction (Y direction) of the lens has curvature, and the focal length of the fast axis collimating lens is related to the divergence angle parallel to the laser beam.
The slow axis collimating lens is arranged in front of the fast axis collimating lens, receives the laser after primary collimation and performs secondary collimation;
further, the slow axis collimator lens is a plano-convex lens made of glass BK7, the transverse axis direction (X direction) of the lens has curvature, and the focal length of the slow axis collimator lens is related to the divergence angle perpendicular to the laser beam.
The right-angle isosceles reflecting prism is arranged in front of the slow-axis collimating lens, the bevel edge of the right-angle isosceles reflecting prism is parallel to the laser beam after secondary collimation, two right-angle edges of the right-angle isosceles reflecting prism are used as reflecting edges to receive and reflect the laser after secondary collimation, and the direction of a laser light path is changed;
furthermore, two right-angle sides of the right-angle isosceles reflecting prism are plated with reflection increasing films, the reflectivity of the reflection increasing films is more than 99%, and the size of each right-angle side of the right-angle isosceles reflecting prism is larger than the length of the slow-axis collimating lens
And (4) doubling. And the focusing lens is arranged in front of the stepped heat sink, receives the reflected laser of the right-angled isosceles reflecting prism on each step surface of the stepped heat sink and realizes laser beam focusing.
Further, the height of the focusing lens is larger than the total height of the stepped heat sink, the length of the focusing lens is larger than the length of the bevel edge of the right-angle isosceles reflecting prism, the focusing lens is a plano-convex lens, and the material of the focusing lens is glass BK 7.
Secondly, it includes:
the step surface is provided with two transition heat sinks, a laser tube core welded on the transition heat sink, a fast axis collimating lens, a slow axis collimating lens and two step heat sinks of a right angle isosceles reflection prism, the two step heat sinks are arranged in different directions, and the right angle isosceles reflection prisms on the two step heat sinks in different directions reflect laser in different directions;
the half-wave plate is arranged in front of a first stepped heat sink in the two stepped heat sinks, receives the reflected laser of the right-angle isosceles reflecting prism on the first stepped heat sink and rotates the polarization state of the reflected laser;
further, the length of the half-wave plate is larger than the length of the bevel edge of the right-angle isosceles reflection prism, and the half-wave plate is a birefringent crystal and enables the polarization state of the reflected laser to be rotated by 90 degrees.
The polarization beam combiner is arranged in front of the half-wave plate and the second stepped heat sink, and is used for combining the polarization state rotating laser from the half-wave plate in different directions with the reflected laser of the right-angle isosceles reflecting prism on the second stepped heat sink;
further, the polarization beam combiner is plated with dielectric film materials with different refractive indexes, and the polarization beam combiner:
one side is anti-reflection, and the polarization state rotating laser of the half-wave plate or the reflected laser of a right-angled isosceles reflecting prism on the second stepped heat sink is received;
and the other side is added with reflection to receive the reflected laser of the right-angle isosceles reflecting prism on the second stepped heat sink or the polarization state rotating laser of the half-wave plate.
And the focusing lens is arranged in front of the polarization beam combiner and used for receiving the combined laser.
(III) advantageous effects
The semiconductor laser beam combining device provided by the invention has the following beneficial effects:
(1) the right-angle isosceles reflecting prism is adopted, so that the number of reflecting mirrors is reduced, and a beam combining system of the semiconductor laser is simplified;
(2) the number of laser single-tube optical path modules can be increased, and high-power output is easy to realize;
(3) the combination of the spatial beam combination and the polarization beam combination improves the output power after beam combination.
Drawings
Fig. 1 is a schematic diagram of a two-row semiconductor laser single-tube spatial beam combining structure according to an embodiment of the present invention;
fig. 2 is a schematic diagram showing a laser single-tube spatial polarization beam combination structure according to another embodiment of the present invention.
In the figure:
stepped heat sink 1 transition heat sink 2 laser single tube 3 fast axis collimating lens 4
Slow axis collimating lens 5 right angle isosceles reflecting prism 6 focusing lens 7
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
Based on the semiconductor laser beam combining device provided by the present invention, an embodiment of the present invention provides a semiconductor laser single-tube spatial beam combining device, please refer to fig. 1, which shows a schematic diagram of a spatial beam combining structure provided by the present embodiment, including:
the stepped heat sink 1 is a plurality of stepped surfaces with sequentially-increased heights, and is welded on a refrigerator;
in some embodiments, the height of each step of the stepped heat sink 1 is 1-3mm, and the material is a heat-conducting metal material;
fig. 1 further shows that on the respective step faces of the stepped heat sink 1 there are provided: the device comprises a transitional heat sink 2, a laser single tube 3 welded on the transitional heat sink 2, a fast axis collimating lens 4, a slow axis collimating lens 5 and a right-angled isosceles reflecting prism 6.
In this embodiment, five planes with different heights are present on the stepped heat sink 1, and are respectively used for bearing a semiconductor laser and an optical element, where the semiconductor laser is the laser monotube 3, the optical element includes the fast axis collimating lens 4, the slow axis collimating lens 5, and the right-angled isosceles reflecting prism 6, and the stepped heat sink is made of a metal material with good thermal conductivity, such as nickel or copper.
Furthermore, the laser single tube 3 as a laser tube core for emitting laser light can be prepared from a substrate and an epitaxial structure grown on the substrate by processes such as photoetching, etching, coating and the like.
In some embodiments, the laser die is soldered on a transition heat sink for emitting laser, wherein the transition heat sink is soldered on the step surface of the stepped heat sink by using a gold-tin soldering process, thereby realizing the fixation of the laser die on the stepped heat sink, and the material of the transition heat sink can be aluminum nitride.
The fast axis collimating lens 4 is arranged in front of the laser tube core, receives the laser emitted by the laser tube core and performs primary laser collimation;
in some embodiments, the fast axis collimating lens 4 is a plano-convex lens made of glass BK7, the longitudinal axis of the lens (Y direction) has a curvature, and the focal length of the fast axis collimating lens is related to the divergence angle of the laser beam emitted parallel to the laser die.
The slow axis collimating lens 5 is arranged in front of the fast axis collimating lens 4, receives the laser after primary collimation and performs secondary collimation on the laser;
in some embodiments, the slow axis collimating lens 5 is a plano-convex lens made of glass BK7, the transverse axis (X direction) of the lens has a curvature, and the focal length of the slow axis collimating lens is related to the divergence angle of the laser beam emitted perpendicular to the laser core.
The upper tree right-angle isosceles reflecting prism 6 is arranged in front of the slow-axis collimating lens 5, the bevel edge of the right-angle isosceles reflecting prism 6 is parallel to the laser beam after secondary collimation, two right-angle edges of the right-angle isosceles reflecting prism 6 are used as reflecting edges to receive and reflect the laser after secondary collimation, and the direction of a laser light path is changed;
in some embodiments, the two right-angle sides of the right-angle isosceles reflecting prism 6 are coated with a reflection increasing film with high reflectivity, the reflectivity of the reflection increasing film is more than 99%, and the size of each right-angle side of the right-angle isosceles reflecting prism is larger than the length of the slow-axis collimating lens 5
And (4) doubling.
And a focusing lens 7 arranged in front of the stepped heat sink for receiving the reflected laser of the right-angled isosceles reflection prism on each step surface of the stepped heat sink to realize laser beam focusing.
Further, the height of the focusing lens is larger than the total height of the stepped heat sink, the length of the focusing lens is larger than the length of the bevel edge of the right-angle isosceles reflecting prism, the focusing lens is a plano-convex lens, and the material of the focusing lens is glass BK 7.
The semiconductor laser single-tube spatial beam combining device provided by the embodiment of the invention further comprises, on the basis of the stepped heat sink:
the focusing lens is arranged in front of the stepped heat sink and used for receiving the reflected laser of the right-angled isosceles reflecting prism on each stepped surface of the stepped heat sink to realize laser beam focusing;
in some embodiments, the focusing lens has a height greater than the total height of the stepped heat sink and a length greater than the length of the hypotenuse of the right-angled isosceles reflecting prism, and is a plano-convex lens made of glass BK 7.
In this embodiment, referring to fig. 1 again, a laser single tube 3 is welded on each of two sides of each step surface of the stepped heat sink 1 through the transition heat sink 2, the laser single tubes 3 on the two sides are disposed opposite to each other, a corresponding fast-axis collimating lens 4 and a corresponding slow-axis collimating lens 5 are disposed in front of each laser single tube chip, laser emitted by the laser single tube 3 sequentially passes through the fast-axis collimating lens 4 and the slow-axis collimating lens 5, so as to collimate laser emitted by the laser single tube 3, and the fast-axis collimating lens 4 and the slow-axis collimating lens 5 can be fixed on the stepped heat sink 1 by using an ultraviolet adhesive. Then the light beam of the collimated laser is turned through the isosceles right-angle reflecting prism 6, each path of laser forms equal-interval distribution in the fast axis direction, two right-angle sides of the isosceles right-angle reflecting prism 6 receive the laser which is emitted from the laser single tube 3 on two sides of the stepped heat sink and is collimated, 90-degree turning is completed, the two paths of laser are turned to the same direction and then output, and finally the light beam is coupled into an optical fiber 8 through the focusing lens 7 to complete output.
Based on the above embodiments, another embodiment of the present invention provides a single-tube polarization beam combiner for semiconductor laser, and fig. 2 shows a schematic view of a spatial polarization beam combining structure provided in this embodiment, which includes:
the two stepped surfaces in the above embodiments are provided with a stepped heat sink 1 having a transition heat sink 2, a laser tube core 3 welded on the transition heat sink 2, a fast axis collimating lens 4, a slow axis collimating lens 5 and a right angle isosceles reflecting prism 6, the two stepped heat sinks 1 are placed in different directions, and the right angle isosceles reflecting prisms 6 on the two stepped heat sinks 1 in different directions reflect laser in different directions.
As described in the foregoing embodiments, the two stepped heat sinks carrying the semiconductor laser and the optical element in this embodiment are disposed perpendicular to each other, and the laser steering is completed through the embodiments described in the foregoing embodiments, and the detailed process is not described herein. Different, because the initial directions of the two stepped heat sinks are different in this embodiment, the steered laser beam reflected by the right-angled isosceles reflecting prism on each stepped heat sink after steering is still a mutually perpendicular beam, and further processing of the steered laser beam still needs to include:
the half-wave plate 9 is arranged in front of the first stepped heat sink in the two stepped heat sinks, receives the reflected laser of the right-angle isosceles reflecting prism on the first stepped heat sink and rotates the polarization state of the reflected laser;
in some embodiments, the half-wave plate is longer than the hypotenuse of the right isosceles prism, and the half-wave plate is a birefringent crystal of a thickness that rotates the polarization of the reflected laser light by an angle of 90 °.
The polarization beam combiner 10 is arranged in front of the half-wave plate and the second stepped heat sink and is used for combining the polarization state rotating laser of the half-wave plate from different directions with the reflected laser of the right-angle isosceles reflecting prism on the second stepped heat sink;
in some embodiments, the polarization beam combiner 10 is coated with a dielectric film material with different refractive indexes, and the polarization beam combiner is:
one side is anti-reflection, and the polarization state rotating laser of the half-wave plate or the reflected laser of a right-angled isosceles reflecting prism on the second stepped heat sink is received;
and the other side is added with reflection to receive the reflected laser of the right-angle isosceles reflecting prism on the second stepped heat sink or the polarization state rotating laser of the half-wave plate.
Namely, one path of the two perpendicular beams is provided with the half-wave plate 9 to change the polarization state of the beam, and the S-state polarized light is changed into the P-state polarized light, or the P-state polarized light is changed into the S-state polarized light and then is incident on the polarization beam combiner 10 which is arranged at an angle of 45 degrees with the two stepped heat sinks, so that laser beam combination is realized, and finally laser output in the same direction is realized.
In this embodiment, the polarization beam combiner 10 is selected to satisfy the following requirements:
for the polarization beam combiner, a suitable high-low refractive index dielectric film material is searched, so that under the condition of 45-degree incidence, the interface of two materials with different refractive indexes meets the Brewster angle condition, the reflection of p light completely disappears, and the p light completely transmits:
high reflectivity for s-light can be achieved by stacking multiple layers of films having optical thicknesses of 1/4 wavelengths.
Finally, the output light beam is coupled to an optical fiber 8 through a focusing lens 7 arranged in front of the polarization beam combiner 10 to complete output, the laser single tube of the beam combination in the embodiment is twice as large as that in the embodiment of fig. 1, and the output power is larger.
In summary, in the semiconductor laser beam combining device provided by the present invention, a new beam combining structure is designed, and in the spatial beam combining structure, a light beam output by each single tube is shaped by the fast axis collimating mirror and the slow axis collimating mirror, and then the direction of the light beam is changed by the right-angled isosceles mirror plated with the high reflection film, and finally the light beam is coupled to the optical fiber through the focusing lens for output; in the polarization beam combination structure, light beams need to pass through a half-wave plate, the polarization direction of the light beams is changed, so that two beams of light with different polarizations are combined into one beam through a polarization beam combination mirror, and finally the light beams are coupled to an optical fiber through a focusing lens to be output. The semiconductor laser beam combining device provided by the invention has the advantages that the number of the laser single tubes can be increased more easily, and high-power output is easy to realize.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A semiconductor laser beam combining device, comprising:
the ladder is heat sink, the ladder is heat sink for a plurality of step faces that highly rise according to the preface, be provided with on each step face: the laser comprises a transitional heat sink, a laser tube core welded on the transitional heat sink, a fast axis collimating lens, a slow axis collimating lens and a right-angle isosceles reflecting prism;
the transition heat sink is welded on the stepped surface of the stepped heat sink;
the fast axis collimating lens is arranged in front of the laser tube core, receives the laser emitted by the laser tube core and performs primary collimation;
the slow axis collimating lens is arranged in front of the fast axis collimating lens, receives the laser after primary collimation and performs secondary collimation;
the right-angle isosceles reflecting prism is arranged in front of the slow-axis collimating lens, the bevel edge of the right-angle isosceles reflecting prism is parallel to the laser beam after secondary collimation, two right-angle edges of the right-angle isosceles reflecting prism are used as reflecting edges to receive and reflect the laser after secondary collimation, and the direction of a laser light path is changed;
and the focusing lens is arranged in front of the stepped heat sink, receives the reflected laser of the right-angle isosceles reflecting prism on each step surface of the stepped heat sink and realizes laser beam focusing.
2. The semiconductor laser beam combining device according to claim 1, wherein the number of the stepped heat sinks having a transition heat sink, a laser tube core welded on the transition heat sink, a fast axis collimating lens, a slow axis collimating lens, and a right angle isosceles prism on the stepped surface is two, the two stepped heat sinks are disposed in different orientations, the right angle isosceles prisms on the two stepped heat sinks in different orientations reflect laser beams in different directions, and the semiconductor laser beam combining device further comprises:
the half-wave plate is arranged in front of the first stepped heat sink, receives the reflected laser of the right-angle isosceles reflecting prism on the first stepped heat sink and enables the polarization state of the reflected laser to rotate;
the polarization beam combiner is arranged in front of the half-wave plate and the second stepped heat sink and is used for combining the polarization state rotating laser from the half-wave plate in different directions with the reflected laser of the right-angle isosceles reflecting prism on the second stepped heat sink;
and the focusing lens is arranged in front of the polarization beam combiner and used for receiving the combined laser.
3. The semiconductor laser beam combining device according to claim 1 or 2, wherein the height of each step of the stepped heat sink is 1-3mm, and the material is a heat-conducting metal material.
4. The semiconductor laser beam combining device according to claim 1 or 2, wherein the submount material is aluminum nitride.
5. The semiconductor laser beam combining device as claimed in claim 1 or 2, wherein the fast axis collimating lens is a plano-convex lens made of glass BK7, the longitudinal axis direction of the lens has curvature, and the focal length of the fast axis collimating lens is related to the divergence angle parallel to the laser beam.
6. The semiconductor laser beam combining device as claimed in claim 1 or 2, wherein the slow axis collimating lens is a plano-convex lens made of glass BK7, the transverse axis direction of the lens has curvature, and the focal length of the slow axis collimating lens is related to the divergence angle perpendicular to the laser beam.
7. The semiconductor laser beam combining device according to claim 1 or 2, wherein two right-angle sides of the right-angle isosceles reflecting prism are coated with reflection increasing films, the reflection of the reflection increasing films is more than 99%, and the size of each right-angle side is larger than the length of the slow-axis collimating lens
And (4) doubling.
8. The semiconductor laser beam combining device as claimed in claim 1 or 2, wherein the focusing lens has a height greater than the total height of the stepped heat sink and a length greater than the length of the hypotenuse of the right-angled isosceles reflecting prism, and is a plano-convex lens made of glass BK 7.
9. The semiconductor laser beam combining device according to claim 2, wherein the half-wave plate has a length greater than a length of the hypotenuse of the right isosceles prism, and the half-wave plate is a birefringent crystal that rotates the polarization state of the reflected laser light by 90 °.
10. The semiconductor laser beam combining device according to claim 2, wherein the polarization beam combining mirror is plated with dielectric film materials with different refractive indexes, and the polarization beam combining mirror:
one side is anti-reflection, and the polarization state rotating laser of the half-wave plate or the reflected laser of a right-angled isosceles reflecting prism on the second stepped heat sink is received;
and the other side is added with reflection to receive the reflected laser of the right-angle isosceles reflecting prism on the second stepped heat sink or the polarization state rotating laser of the half-wave plate.
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| CN115657075A (en) * | 2022-05-25 | 2023-01-31 | 北京一径科技有限公司 | Beam combining device and manufacturing method thereof |
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| CN114498287A (en) * | 2022-04-02 | 2022-05-13 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
| CN114498287B (en) * | 2022-04-02 | 2022-06-28 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
| CN115657075A (en) * | 2022-05-25 | 2023-01-31 | 北京一径科技有限公司 | Beam combining device and manufacturing method thereof |
| CN115185094A (en) * | 2022-08-08 | 2022-10-14 | 东莞市鸿日电子有限公司 | Modular carving laser pump |
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