CN115469463A - Two-dimensional laser array's structure of restrainting that closes - Google Patents
Two-dimensional laser array's structure of restrainting that closes Download PDFInfo
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- CN115469463A CN115469463A CN202211144608.2A CN202211144608A CN115469463A CN 115469463 A CN115469463 A CN 115469463A CN 202211144608 A CN202211144608 A CN 202211144608A CN 115469463 A CN115469463 A CN 115469463A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
- G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/095—Refractive optical elements
- G02B27/0955—Lenses
- G02B27/0966—Cylindrical lenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
- G02B27/0938—Using specific optical elements
- G02B27/0977—Reflective elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/14—Beam splitting or combining systems operating by reflection only
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/16—Beam splitting or combining systems used as aids for focusing
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4075—Beam steering
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a beam combination structure of a two-dimensional laser array, which comprises a semiconductor laser array, a collimating mirror array, a first reflecting mirror array, a second reflecting mirror array, a focusing mirror group and an optical fiber which are sequentially arranged along the direction of an optical path; the semiconductor laser array, the collimating mirror array and the first reflecting mirror array are arranged along a straight light path, the stacking density of the emergent laser array is increased by arranging the first reflecting mirror array in a staggered manner, and the reflecting mirrors in the first reflecting mirror array are right-angle trapezoid reflecting mirrors. The collimating lens array can correct the collimating light direction of each laser, reduces the volume by utilizing the plurality of collimating lens arrays with an integrated structure, and can simultaneously arrange the lasers in the semiconductor laser array at smaller intervals; the first reflector array arranged in a staggered mode improves the space filling density of light beams, improves the focusing power density of the whole laser, and achieves the miniaturization of the whole semiconductor laser.
Description
Technical Field
The invention relates to the field of laser, in particular to a beam combining structure of a two-dimensional laser array.
Background
The semiconductor laser, also called laser diode, is a laser using semiconductor material as working substance, it has advantages of small volume, light weight, high reliability, long service life, low power consumption, etc., and has been widely used in the fields of laser communication, optical storage, optical gyro, laser printing, distance measurement and laser radar, etc., but has been developed relatively slowly in the field of high power laser processing application, mainly because the quality of the light beam of the semiconductor laser is poor, so it is the most important research direction to improve the quality, brightness and power of the light beam of the semiconductor laser. In order to realize high-power and high-brightness output of a semiconductor laser, a laser beam combining technology is currently generally adopted, and is a process capable of improving beam quality, increasing output power and improving power density.
The existing main spatial beam combination processing flow is roughly as follows: fast axis collimation → slow axis collimation → planar or prismatic reflection → lens focusing → fiber coupled output or spatial output. Each single tube corresponds to a group of lenses, the semiconductor lasers are small in size, but the lenses and the adjusting devices thereof occupy a large space, so that the size of the equipment is increased greatly, the space filling density of light beams is reduced, and meanwhile, because a plurality of lasers are combined, a large collimated light pointing error is introduced, and the actually output light power density is reduced.
Disclosure of Invention
Technical problem to be solved
In order to solve the above problems in the prior art, the present invention provides a beam combining structure of a two-dimensional laser array, which can correct the collimated light direction of each laser, and is beneficial to improving the space filling density of the light beam, improving the focusing power density of the whole laser, and realizing the miniaturization of the whole semiconductor laser.
(II) technical scheme
In order to achieve the purpose, the invention adopts the main technical scheme that:
a beam combination structure of a two-dimensional laser array is characterized in that: comprises a semiconductor laser array for generating laser arrays parallel to each other and densely packed; the semiconductor laser array is an M multiplied by N array, wherein M, N > =1; the emergent light array of the semiconductor laser array is coupled into the optical fiber after sequentially passing through the collimating mirror array, the first reflecting mirror array, the second reflecting mirror array and the focusing mirror group; the collimating lens array comprises an integrated structure which is composed of a plurality of collimating lenses and is used for reducing the volume; the first reflector array is arranged in the emergent light direction of the collimating mirror array in a staggered mode and used for increasing the stacking density of the emergent laser array; the second mirror array is at a 45 degree angle to the first mirror array.
Further, the collimating lens array comprises a fast axis collimating lens array and a slow axis collimating lens array; the fast axis collimating lens array is a 1 multiplied by N array, and the slow axis collimating lens array is an M multiplied by 1 array; the fast axis collimating lens array is an integrated structure formed by sequentially attaching N fast axis collimating lenses; the slow axis collimating lens array is an integrated structure formed by sequentially attaching M slow axis collimating lenses.
Further, the collimating lens array comprises a fast axis collimating lens array and a slow axis collimating lens array; the fast axis collimating lens array is an array of M multiplied by 1, and the slow axis collimating lens array is an array of 1 multiplied by N; the fast axis collimating lens array is an integrated structure formed by sequentially attaching M fast axis collimating lenses; the slow axis collimating lens array is an integrated structure formed by sequentially attaching N slow axis collimating lenses.
Further, the first reflector array is arranged perpendicular to the collimator array.
Further, the first mirror array is an M × N array or an M × 1 array.
Further, the mirrors in the first mirror array are right trapezoid mirrors.
Furthermore, the emergent laser of the collimating lens array emits light after being incident from the right-angle side of the right-angle trapezoid reflector and being totally reflected by the bevel edge of the right-angle trapezoid reflector.
Further, the second mirror array is an M × N array or a 1 × N array.
Further, the back of the second mirror array is on the same plane.
(III) advantageous effects
The invention has the beneficial effects that: the collimating light direction of each laser can be corrected through the collimating mirror array, the size is reduced by utilizing a plurality of collimating lens arrays in an integrated structure, and meanwhile, the lasers in the semiconductor laser array can be arranged at smaller intervals; the first reflector array arranged by mistake improves the space filling density of light beams, improves the integral laser focusing power density, and is matched with the second reflector array with the back surface in the same plane, thereby being beneficial to realizing the miniaturization of the integral semiconductor laser.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a reference view of the right angle trapezoidal reflector of the present invention in use;
FIG. 3 is a schematic diagram of a first mirror array beam combiner of the present invention;
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without inventive efforts based on the embodiments of the present invention, are within the scope of protection of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "provided," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1, please refer to fig. 1-3:
a beam combination structure of a two-dimensional laser array is sequentially provided with a semiconductor laser array 10, a collimating mirror array 20, a first reflecting mirror array 30, a second reflecting mirror array 40, a focusing mirror group 50 and an optical fiber 60 along the optical path direction; the semiconductor laser array 10, the collimating mirror array 20 and the first reflector array 30 are arranged along a straight light path, the stacking density of emergent laser arrays is increased by staggered arrangement among the first reflector arrays 30, the reflectors in the first reflector array 30 are right-angle trapezoidal reflectors 31, emergent laser of the collimating mirror array 20 is emitted after being incident from right-angle sides 32 of the right-angle trapezoidal reflectors 31 and then totally reflected by inclined sides 33 of the right-angle trapezoidal reflectors 31, the middle parts of the right-angle trapezoidal reflectors 31 are fixing parts 34 capable of being fixed, and the right-angle trapezoidal reflectors 31 are adopted to reduce influences caused by the thicknesses of lenses compared with plane reflectors; compared with a right-angle prism, the light-passing surface is avoided, and the fixing part 34 for fixing is added, so that the volume of the device can be reduced, and the mounting process can be simplified.
The second reflector array 40 reflects the emergent laser array to the focusing mirror set 50 for focusing and then couples the laser array into the optical fiber 60;
the semiconductor laser array 10 is an M × N array, where M, N > =1.
In an embodiment of the present invention, the collimator lens array 20 includes a fast-axis collimator lens array 21 and a slow-axis collimator lens array 22; the fast axis collimating lens array 21 is a 1 × N array, and the slow axis collimating lens array 22 is an mx 1 array; the fast axis collimating lens array 21 is an integrated structure formed by sequentially attaching N fast axis collimating lenses; the slow axis collimating lens array 22 is an integral structure formed by sequentially attaching M slow axis collimating lenses; as shown in fig. 1, a single sub-axis collimating lens in the fast axis collimating lens array 21 has a long length, and can collimate the outgoing light of M semiconductor lasers simultaneously in the longitudinal direction, and a single slow axis collimating lens in the slow axis collimating lens array 22 has a long width, and can collimate the outgoing light of N semiconductor lasers simultaneously in the transverse direction. Compared with the traditional one-to-one structure, the space occupation can be effectively reduced, and the size of the beam combining device is reduced.
In an embodiment of the present invention, the collimating mirror array 20 includes a fast-axis collimating lens array 21 and a slow-axis collimating lens array 22; the fast axis collimating lens array 21 is an M × 1 array, and the slow axis collimating lens array 22 is a 1 × N array; the fast axis collimating lens array 21 is an integral structure formed by sequentially attaching M fast axis collimating lenses; the slow axis collimating lens array 22 is an integral structure formed by sequentially attaching N slow axis collimating lenses. The single fast axis collimating lens in the fast axis collimating lens array 21 has a longer width, and can collimate the emergent light of the N semiconductor lasers in the transverse direction at the same time. Compare the structure of traditional one-to-one and can the effectual occupation that reduces the space to reduce the volume of beam combining device.
The collimating mirror array with the integrated structure can collimate the laser array in a smaller volume on one hand, and can meet the requirement that the semiconductor laser arrays are arranged at smaller intervals on the other hand, so that the volume is reduced, and the emergent laser can be accurately collimated and emitted into the first reflector array 30;
in an embodiment of the present invention, the first mirror array 30 is disposed perpendicular to the collimating mirror array 20, and the second mirror array 40 and the first mirror array 30 form an angle of 45 °, so that the longitudinal space can be reduced by turning the second mirror array 40, and further the second mirror array 40 can be arranged in a staggered manner to further increase the stacking density of the light beams.
In an embodiment of the present invention, the first mirror array 30 is an M × N array or an M × 1 array. The transverse N reflectors are sequentially attached to form an integral structure, namely an M multiplied by 1 array, so that the size can be effectively reduced through the change; meanwhile, the mirrors in the first mirror array 30 are right-angle trapezoidal mirrors 31, N mirrors are arranged side by side in close proximity in the transverse direction and are arranged in M rows, and emergent light in the collimating mirror array 20 is emitted after being incident from right-angle sides 32 of the right-angle trapezoidal mirrors 31 and then being totally reflected from a bevel edge 33. Therefore, by arranging M rows of the right-angle trapezoidal mirrors 31 in a staggered manner, the stacking density of the outgoing light beams can be effectively adjusted, thereby reducing the volume of the second mirror array 40. As shown in fig. 3, the stacking density of the outgoing light beams can be conveniently adjusted by the staggered arrangement of the right-angle trapezoidal mirrors 31, and meanwhile, the right-angle trapezoidal mirrors 31 avoid the light passing surface and increase the fixing parts 34 for fixing, so that the device volume can be reduced and the mounting process can be simplified.
Similarly, the second mirror array 40 is an M × N array or a 1 × N array. The second mirror array can be arranged in N staggered rows to adjust the stacking density of the outgoing light beams, so that the area of the laser array incident on the focusing mirror assembly 50 is smaller and approaches to a larger light spot, and the focusing mirror assembly 50 with a smaller volume can be used for focusing and then coupling into the optical fiber 60.
In an embodiment of the present invention, the back surfaces of the second mirror arrays 40 are located on the same plane, that is, the second mirror arrays 40 can be tightly arranged on the same plane to form an integrated structure, so as to reduce the volume, that is, the second mirror arrays 40 can use a single mirror to reflect and focus the emergent light onto the focusing lens group 50. Compared with an array structure, the mode that the array structure is arranged on the same plane can reduce the installation difficulty and simplify the process.
All optical transmission surfaces of the semiconductor laser array 10, the collimating mirror array 20, the first reflecting mirror array 30, the second reflecting mirror array 40, the focusing mirror group 50 and the optical fiber 60 in the beam combining structure are coated with antireflection films with corresponding laser wavelengths, and all the optical reflection surfaces can adopt total reflection or be coated with high-reflection films with corresponding laser wavelengths.
The laser output laser wavelength of the semiconductor laser array 10 of the present invention is 380nm to 420nm, or 430nm to 470nm, or 600nm to 660nm, or 780nm to 850nm, or 900nm to 990nm.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (9)
1. A beam combination structure of a two-dimensional laser array is characterized in that: comprises a semiconductor laser array for generating laser arrays parallel to each other and densely packed; the semiconductor laser array is an M multiplied by N array, wherein M, N > =1; the emergent light array of the semiconductor laser array is coupled into the optical fiber after sequentially passing through the collimating mirror array, the first reflecting mirror array, the second reflecting mirror array and the focusing mirror group; the collimating lens array comprises an integrated structure which is composed of a plurality of collimating lenses and is used for reducing the volume; the first reflector array is arranged in a staggered mode in the emergent light direction of the collimating mirror array and used for increasing the stacking density of the emergent laser array; the second mirror array is at a 45 ° angle to the first mirror array.
2. The beam combining structure of the two-dimensional laser array according to claim 1, wherein: the collimating lens array comprises a fast axis collimating lens array and a slow axis collimating lens array; the fast axis collimating lens array is a 1 multiplied by N array, and the slow axis collimating lens array is an M multiplied by 1 array; the fast axis collimating lens array is an integrated structure formed by sequentially attaching N fast axis collimating lenses; the slow axis collimating lens array is an integrated structure formed by sequentially attaching M slow axis collimating lenses.
3. The beam combining structure of the two-dimensional laser array according to claim 1, wherein: the collimating lens array comprises a fast axis collimating lens array and a slow axis collimating lens array; the fast axis collimating lens array is an array of M multiplied by 1, and the slow axis collimating lens array is an array of 1 multiplied by N; the fast axis collimating lens array is an integrated structure formed by sequentially attaching M fast axis collimating lenses; the slow axis collimating lens array is an integrated structure formed by sequentially attaching N slow axis collimating lenses.
4. The beam combining structure of the two-dimensional laser array according to claim 1, wherein: the first reflector array is arranged perpendicular to the collimator array.
5. The beam combining structure of the two-dimensional laser array according to claim 1 or 4, wherein: the first reflector array is an M multiplied by N array or an M multiplied by 1 array.
6. The beam combining structure of the two-dimensional laser array according to claim 5, wherein: the reflectors in the first reflector array are right-angle trapezoidal reflectors.
7. The beam combining structure of the two-dimensional laser array according to claim 6, wherein: emergent laser of the collimating mirror array is emitted after being incident from the right-angle side of the right-angle trapezoid reflector and then is totally reflected by the inclined side of the right-angle trapezoid reflector.
8. The beam combining structure of the two-dimensional laser array according to claim 1, wherein: the second mirror array is an M × N array or a 1 × N array.
9. The beam combining structure of the two-dimensional laser array according to claim 8, wherein: the back surfaces of the second reflector arrays are positioned on the same plane.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211144608.2A CN115469463A (en) | 2022-09-20 | 2022-09-20 | Two-dimensional laser array's structure of restrainting that closes |
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| CN202211144608.2A CN115469463A (en) | 2022-09-20 | 2022-09-20 | Two-dimensional laser array's structure of restrainting that closes |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117767101A (en) * | 2024-02-20 | 2024-03-26 | 深圳市星汉激光科技股份有限公司 | Small-size laser and laser equipment |
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2022
- 2022-09-20 CN CN202211144608.2A patent/CN115469463A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117767101A (en) * | 2024-02-20 | 2024-03-26 | 深圳市星汉激光科技股份有限公司 | Small-size laser and laser equipment |
| CN117767101B (en) * | 2024-02-20 | 2024-05-07 | 深圳市星汉激光科技股份有限公司 | Small-size laser and laser equipment |
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