CN116154616A - Multi-wavelength laser beam combining device - Google Patents
Multi-wavelength laser beam combining device Download PDFInfo
- Publication number
- CN116154616A CN116154616A CN202310143889.8A CN202310143889A CN116154616A CN 116154616 A CN116154616 A CN 116154616A CN 202310143889 A CN202310143889 A CN 202310143889A CN 116154616 A CN116154616 A CN 116154616A
- Authority
- CN
- China
- Prior art keywords
- laser
- lambda
- wavelength
- wavelength laser
- beam combining
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention discloses a multi-wavelength laser beam combining device, which comprises: the semiconductor laser comprises a wavelength beam combining element and five semiconductor lasers, wherein the wavelength beam combining element comprises a first surface, a second surface, a third surface and a fourth surface; lambda of first semiconductor laser 1 Lambda of wavelength laser and second semiconductor laser 2 The wavelength laser is combined on the first surface, and lambda after the combination 1 、λ 2 Lambda of wavelength laser and third semiconductor laser 3 The wavelength laser is combined on the second surface, and lambda after the combination 1 、λ 2 、λ 3 Lambda of wavelength laser and fourth semiconductor laser 4 The wavelength laser is combined on the third surface, and lambda after the combination 1 、λ 2 、λ 3 、λ 4 Lambda of wavelength laser and fifth semiconductor laser 5 And combining the wavelength laser on the fourth surface. The invention uses one wavelength beam combining element to realize the wavelength beam combining of five lasers with different wavelengths, greatly simplifies a multi-wavelength beam combining system and improves the output work of a semiconductor laserThe rate and the laser brightness expand the application range.
Description
Technical Field
The invention relates to the technical field of laser beam combining, in particular to a multi-wavelength laser beam combining device.
Background
The semiconductor laser has the advantages of compact structure, high efficiency, low cost, high reliability and the like, and is very widely used. However, the semiconductor laser is limited by the chip manufacturing process, the output power of a single unit is relatively low, and as the demand of high-power and high-brightness laser is continuously increased, the laser beam combining technology is generated.
Common laser beam combining techniques include coherent and incoherent beams, including: spatial beam combining, polarization beam combining, wavelength beam combining, spectral beam combining; the wavelength beam combination is a beam combination mode which is simpler to operate and higher in benefit, and is generally carried out by laser with different wavelengths with a wavelength interval of about 25nm through a wavelength beam combination lens, and the power after beam combination is approximately the sum of the powers of all the light emitting units participating in beam combination. In general, the wavelength beam combination is to combine lasers with two to three wavelengths, and for the beam combination with more wavelengths, a beam combination system becomes complex, so that the structure of the multi-wavelength beam combination system is simplified, the feasibility and the effectiveness of the system are improved, and the method has important significance for obtaining a high-power and high-brightness laser beam combination device.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides a multi-wavelength laser beam combining device.
The invention discloses a multi-wavelength laser beam combining device, which comprises: the semiconductor laser comprises a wavelength beam combining element and five semiconductor lasers, wherein the wavelength beam combining element comprises a first surface, a second surface, a third surface and a fourth surface;
lambda of first semiconductor laser 1 Lambda of wavelength laser and second semiconductor laser 2 The wavelength laser is combined on the first surface, and lambda after the combination 1 、λ 2 Lambda of wavelength laser and third semiconductor laser 3 The wavelength laser is combined on the second surface, and lambda after the combination 1 、λ 2 、λ 3 Wavelength laser and the firstLambda of four semiconductor laser 4 The wavelength laser is combined on the third surface, and lambda after the combination 1 、λ 2 、λ 3 、λ 4 Lambda of wavelength laser and fifth semiconductor laser 5 And combining the wavelength laser on the fourth surface.
As a further improvement of the invention, the first surface is arranged in parallel with the second surface, and the third surface is arranged in parallel with the fourth surface; the first surface is arranged perpendicular to the fourth surface, and the second surface is arranged perpendicular to the third surface.
As a further improvement of the invention, the transmission side laser light and the reflection side laser light of the first surface, the second surface, the third surface or the fourth surface are respectively incident on the corresponding surfaces at 45 DEG, and the first surface is plated with the laser light which allows lambda 1 Wavelength laser transmission lambda 2 A film layer for reflecting wavelength laser, wherein the second surface is plated with a film layer for allowing lambda 3 Wavelength laser transmission lambda 1 、λ 2 A film layer for reflecting the wavelength laser, wherein the third surface is plated with a film layer for allowing lambda 4 Wavelength laser transmission lambda 1 、λ 2 、λ 3 A film layer for reflecting wavelength laser light, wherein the fourth surface is plated with a film layer for allowing lambda 5 Wavelength laser transmission lambda 1 、λ 2 、λ 3 、λ 4 A film layer that reflects wavelength laser light.
As a further improvement of the present invention, there is also included: a fifth surface and a sixth surface;
the fifth surface is connected with one side of the first surface and one side of the second surface, the other side of the first surface is connected with one side of the fourth surface, the other side of the second surface is connected with one side of the third surface, and the sixth surface is connected with the other side of the third surface and the other side of the fourth surface.
As a further improvement of the invention lambda 2 The wavelength laser is firstly vertically incident to the fifth surface and then is incident to the first surface, and the full-band laser beam combined by the fourth surface is emitted from the sixth surface; the fifth surface is plated with a permissible lambda 2 The sixth surface is plated with a full-wave band film layer with full-wave laser transmissionIs provided.
As a further improvement of the invention, a fast axis collimating mirror and a slow axis collimating mirror are sequentially arranged in the laser emergent direction of each semiconductor laser.
As a further improvement of the invention, the distance from the fast axis collimating mirror to the light-emitting surface of the semiconductor laser is equal to the focal length of the fast axis collimating mirror, and the surface of the fast axis collimating mirror is plated with an antireflection film with the transmittance more than 99 percent; the distance from the slow axis collimating mirror to the light-emitting surface of the semiconductor laser is equal to the focal length of the slow axis collimating mirror, and the surface of the slow axis collimating mirror is plated with an antireflection film with the transmittance more than 99%.
As a further improvement of the invention, a reflector is also arranged on the optical axis of the emergent laser of the fifth semiconductor laser, the reflector is arranged on the emergent side of the slow-axis collimating mirror, the reflector is placed at 45 degrees and the surface is plated with lambda 5 Total reflection film of wavelength laser.
As a further improvement of the present invention, the semiconductor laser wavelength is in the visible light or near infrared range, and the laser wavelengths of the five semiconductor lasers are different.
As a further improvement of the invention, the semiconductor laser is a single tube, a bar or a packaged light source module.
Compared with the prior art, the invention has the beneficial effects that:
the invention uses the semiconductor lasers with different wavelengths as the wavelength beam combining light source, and uses one wavelength beam combining element to realize the wavelength beam combining of five lasers with different wavelengths, thereby greatly simplifying the multi-wavelength beam combining system, improving the output power and the laser brightness of the semiconductor lasers and expanding the application range; has important significance for obtaining the laser beam combining device with high power and high brightness.
Drawings
FIG. 1 is a schematic diagram of a multi-wavelength laser beam combining device according to the present disclosure;
FIG. 2 is a schematic diagram of the wavelength beam combining element in FIG. 1;
fig. 3 is a beam combining schematic diagram of the multi-wavelength laser beam combining device disclosed by the invention.
In the figure:
1. a semiconductor laser; 2. a fast axis collimator lens; 3. a slow axis collimating mirror; 4. a wavelength beam combining element; 401. a first surface; 402. a second surface; 403. a third surface; 404. a fourth surface; 405. a fifth surface; 406. a sixth surface; 5. a reflecting mirror.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention is described in further detail below with reference to the attached drawing figures:
the invention provides a multi-wavelength laser beam combining device, which comprises: the laser beam splitter comprises a wavelength beam combining element and a plurality of semiconductor lasers, wherein the semiconductor lasers are arranged at different positions and emit laser beams with different wavelengths, the laser beams with different wavelengths are all incident to the wavelength beam combining element after being collimated by a fast axis and a slow axis, and the wavelength beam combining element selectively reflects or transmits the laser beams with different wavelengths to perform wavelength beam combining so as to realize common-aperture laser output.
Specific:
as shown in fig. 1 and 3, the present invention provides a multi-wavelength laser beam combining device, including: five semiconductor lasers 1, a fast axis collimating mirror 2, a slow axis collimating mirror 3, a wavelength beam combining element 4 and a reflecting mirror 5; wherein, the liquid crystal display device comprises a liquid crystal display device,
the wavelength beam combining element 4 includes a first surface 401, a second surface 402, a third surface 403, a fourth surface 404, a fifth surface 405, and a sixth surface 406, which form a structure of the wavelength beam combining element 4 as shown in fig. 2; that is, the first surface 401 is disposed parallel to the second surface 402, and the third surface 403 is disposed parallel to the fourth surface 404; the first surface 401 is perpendicular to the fourth surface 404, and the second surface 402 is perpendicular to the fourth surfaceThe third surface 403 is vertically disposed; fifth surface 405 connects first surface 401 with one side of second surface 402, the other side of first surface 401 connects with one side of fourth surface 404, the other side of second surface 402 connects with one side of third surface 403, and sixth surface 406 connects third surface 403 with the other side of fourth surface 404; the transmission side laser light and the reflection side laser light of the first surface 401, the second surface 402, the third surface 403, and the fourth surface 404 are all incident at 45 ° to the corresponding surfaces. The light-emitting side of the first semiconductor laser to the fourth semiconductor laser is sequentially provided with a fast axis collimating mirror 2 and a slow axis collimating mirror 3, the light-emitting side of the fifth semiconductor laser is sequentially provided with the fast axis collimating mirror 2, the slow axis collimating mirror 3 and a reflecting mirror 5, the distance from the fast axis collimating mirror 2 to the light-emitting surface of the corresponding semiconductor laser is equal to the focal length of the fast axis collimating mirror 2, and the surface of the fast axis collimating mirror 2 is plated with an antireflection film with the laser transmittance of more than 99% of the wave band; the distance from the slow-axis collimating mirror 3 to the light-emitting surface of the corresponding semiconductor laser is equal to the focal length of the slow-axis collimating mirror 3, and the surface of the slow-axis collimating mirror 3 is plated with an antireflection film with the laser transmittance of more than 99% of the wave band; the reflector 5 is placed at 45 DEG and the surface is plated with lambda 5 Total reflection film of wavelength laser.
Further, the semiconductor laser 1 has a wavelength in the visible light or near infrared range, and the laser wavelengths of the five semiconductor lasers are different; the semiconductor laser of (2) can be a single tube, can be a bar, can also be a stack or other packaged light source modules.
Specific:
lambda of first semiconductor laser 1 The wavelength laser is sequentially collimated by the fast axis collimator 2 and the slow axis collimator 3 and then is incident to the first surface 401 from the transmission side, and lambda of the second semiconductor laser 2 The wavelength laser is collimated by the fast axis collimator 2 and the slow axis collimator 3, and then vertically incident on the fifth surface 405, and then incident on the first surface 401 from the reflection side, lambda 1 Wavelength laser and lambda 2 The wavelength laser is perpendicular to the first surface 401 and is combined, and the combined light is incident to the second surface 402 from the reflecting side;
lambda of third semiconductor laser 3 The wavelength laser sequentially passes through a fast axis collimating mirror 2 and a slow axis collimating mirror 3Collimated incident on the second surface 402 from the transmission side, lambda after beam combination 1 、λ 2 Wavelength laser and lambda 3 The wavelength laser is perpendicular to the second surface 402 and is combined, and the combined light is incident to the third surface 403 from the reflection side;
lambda of fourth semiconductor laser 4 The wavelength laser is sequentially collimated by the fast axis collimator 2 and the slow axis collimator 3 and then is incident to the third surface 403 from the transmission side, and lambda after beam combination 1 、λ 2 、λ 3 Wavelength laser and lambda 4 The wavelength laser light is perpendicular to the third surface 403 and is combined, and the combined light is incident to the fourth surface 404 from the reflection side;
lambda of fifth semiconductor laser 5 The wavelength laser is sequentially collimated by the fast axis collimating mirror 2, the slow axis collimating mirror 3 and the reflecting mirror 5 and then is incident on the fourth surface 404 from the transmission side, and lambda after beam combination 1 、λ 2 、λ 3 、λ 4 Wavelength laser and lambda 5 The wavelength laser beams are perpendicular to each other and combined on the fourth surface 404, and the combined full-band laser beams are emitted perpendicularly from the sixth surface 406.
Wherein, the liquid crystal display device comprises a liquid crystal display device,
the first surface 401 of the present invention is plated with a permissible lambda 1 Wavelength laser transmission lambda 2 A film layer for reflecting wavelength laser light, and a second surface 402 is plated with a film layer for allowing lambda 3 Wavelength laser transmission lambda 1 、λ 2 A film layer for reflecting wavelength laser light, and a third surface 403 is plated with a film layer for allowing lambda 4 Wavelength laser transmission lambda 1 、λ 2 、λ 3 A film layer for reflecting wavelength laser light, and a fourth surface 404 is plated with a film layer for allowing lambda 5 Wavelength laser transmission lambda 1 、λ 2 、λ 3 、λ 4 A film layer reflecting wavelength laser light, the fifth surface 405 being plated with a film layer allowing lambda 2 The sixth surface 406 is coated with an antireflection film with full wave band; further, the reflection or transmission effect of different film layers on different wavelengths is 100%.
The invention has the advantages that:
the invention uses the semiconductor lasers with different wavelengths as the wavelength beam combining light source, and uses one wavelength beam combining element to realize the wavelength beam combining of five lasers with different wavelengths, thereby greatly simplifying the multi-wavelength beam combining system, improving the output power and the laser brightness of the semiconductor lasers and expanding the application range; has important significance for obtaining the laser beam combining device with high power and high brightness.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, but various modifications and variations can be made to the present invention by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A multi-wavelength laser beam combining device, comprising: the semiconductor laser comprises a wavelength beam combining element and five semiconductor lasers, wherein the wavelength beam combining element comprises a first surface, a second surface, a third surface and a fourth surface;
lambda of first semiconductor laser 1 Lambda of wavelength laser and second semiconductor laser 2 The wavelength laser is combined on the first surface, and lambda after the combination 1 、λ 2 Lambda of wavelength laser and third semiconductor laser 3 The wavelength laser is combined on the second surface, and lambda after the combination 1 、λ 2 、λ 3 Lambda of wavelength laser and fourth semiconductor laser 4 The wavelength laser is combined on the third surface, and lambda after the combination 1 、λ 2 、λ 3 、λ 4 Lambda of wavelength laser and fifth semiconductor laser 5 And combining the wavelength laser on the fourth surface.
2. The multi-wavelength laser beam combining apparatus as claimed in claim 1, wherein the first surface is disposed in parallel with the second surface, and the third surface is disposed in parallel with the fourth surface; the first surface is arranged perpendicular to the fourth surface, and the second surface is arranged perpendicular to the third surface.
3. The multi-wavelength laser beam combining device of claim 2, which is characterized in thatCharacterized in that the transmission side laser and the reflection side laser of the first surface, the second surface, the third surface or the fourth surface are respectively incident to the corresponding surfaces at 45 DEG, and the first surface is plated with a laser beam which allows lambda 1 Wavelength laser transmission lambda 2 A film layer for reflecting wavelength laser, wherein the second surface is plated with a film layer for allowing lambda 3 Wavelength laser transmission lambda 1 、λ 2 A film layer for reflecting the wavelength laser, wherein the third surface is plated with a film layer for allowing lambda 4 Wavelength laser transmission lambda 1 、λ 2 、λ 3 A film layer for reflecting wavelength laser light, wherein the fourth surface is plated with a film layer for allowing lambda 5 Wavelength laser transmission lambda 1 、λ 2 、λ 3 、λ 4 A film layer that reflects wavelength laser light.
4. The multi-wavelength laser beam combining device as claimed in claim 2, further comprising: a fifth surface and a sixth surface;
the fifth surface is connected with one side of the first surface and one side of the second surface, the other side of the first surface is connected with one side of the fourth surface, the other side of the second surface is connected with one side of the third surface, and the sixth surface is connected with the other side of the third surface and the other side of the fourth surface.
5. The multi-wavelength laser beam combining apparatus as claimed in claim 4, wherein λ is 2 The wavelength laser is firstly vertically incident to the fifth surface and then is incident to the first surface, and the full-band laser beam combined by the fourth surface is emitted from the sixth surface; the fifth surface is plated with a permissible lambda 2 And the sixth surface is plated with an antireflection film with full wave band.
6. A multi-wavelength laser beam combining apparatus as claimed in any one of claims 1 to 5, wherein a fast axis collimator and a slow axis collimator are provided in order in a laser light emitting direction of each of the semiconductor lasers.
7. The multi-wavelength laser beam combining device as claimed in claim 6, wherein a distance from the fast axis collimating mirror to the light emitting surface of the semiconductor laser is equal to a focal length of the fast axis collimating mirror, and a surface of the fast axis collimating mirror is coated with an antireflection film with a transmittance of > 99%; the distance from the slow axis collimating mirror to the light-emitting surface of the semiconductor laser is equal to the focal length of the slow axis collimating mirror, and the surface of the slow axis collimating mirror is plated with an antireflection film with the transmittance more than 99%.
8. The device according to claim 6, wherein a mirror is further provided on an optical axis of the outgoing laser light of the fifth semiconductor laser, the mirror is provided on an outgoing side of the slow axis collimator, the mirror is disposed at 45 ° and has a surface coated with λ 5 Total reflection film of wavelength laser.
9. The multi-wavelength laser beam combining apparatus according to any one of claims 1 to 5, wherein the semiconductor lasers have wavelengths in the visible light or near infrared range, and the laser wavelengths of the five semiconductor lasers are different.
10. The multi-wavelength laser beam combining apparatus according to any one of claims 1 to 5, wherein the semiconductor laser is a single tube, a bar, or a packaged light source module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310143889.8A CN116154616A (en) | 2023-02-21 | 2023-02-21 | Multi-wavelength laser beam combining device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310143889.8A CN116154616A (en) | 2023-02-21 | 2023-02-21 | Multi-wavelength laser beam combining device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116154616A true CN116154616A (en) | 2023-05-23 |
Family
ID=86357953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310143889.8A Pending CN116154616A (en) | 2023-02-21 | 2023-02-21 | Multi-wavelength laser beam combining device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116154616A (en) |
-
2023
- 2023-02-21 CN CN202310143889.8A patent/CN116154616A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9596034B2 (en) | High brightness dense wavelength multiplexing laser | |
| CN101833150B (en) | Fiber coupling module of high-power semiconductor laser | |
| US20040252744A1 (en) | Apparatus for reducing spacing of beams delivered by stacked diode-laser bars | |
| US10666015B2 (en) | Laser array beam combination device | |
| CN111613969B (en) | Semiconductor laser beam combining device | |
| US20120027043A1 (en) | High power multi-chip pump modules with protection filter for 1060nm, and pump modules including the same | |
| CN115954761A (en) | Multi-single-tube semiconductor laser beam combining device | |
| CN110635354A (en) | TO-packaging-based optical fiber coupling semiconductor laser module with green light single tube | |
| US20170299875A1 (en) | Single-emitter line beam system | |
| CN112886382A (en) | Single-group high-power optical fiber coupling semiconductor laser packaging structure and application | |
| CN116154616A (en) | Multi-wavelength laser beam combining device | |
| CN213845834U (en) | High-brightness and high-efficiency semiconductor laser | |
| CN112103768B (en) | Semiconductor laser | |
| CN213845835U (en) | Semiconductor laser with small volume and high power | |
| CN112563879A (en) | Dense wavelength beam combining device of multi-single-tube semiconductor laser | |
| CN113161849A (en) | Chromatographic synthesis device and method insensitive to relative error of laser beam incident angle | |
| CN220019980U (en) | High-power laser module vertical light-emitting light path system | |
| CN217007871U (en) | Polarization beam-combining prism and semiconductor laser | |
| CN112670830B (en) | Partial coherent beam combination system of semiconductor laser | |
| CN116154599B (en) | Compact spectrum synthesizer | |
| US8937977B2 (en) | Laser antireflection device and laser apparatus comprising same | |
| CN218612242U (en) | Novel light path structure of high-power laser module | |
| CN202351518U (en) | Multi-wavelength laser-merged emission optical system | |
| CN217087131U (en) | Blue laser based on right-angle prism space beam combination | |
| CN213341080U (en) | Semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |