CN221447692U

CN221447692U - Semiconductor laser module and semiconductor laser

Info

Publication number: CN221447692U
Application number: CN202322658878.1U
Authority: CN
Inventors: 蒋峰; 吕张勇; 邱小兵; 李菡; 李永高; 李�权
Original assignee: Suzhou Maxphotonics Co Ltd
Current assignee: Suzhou Maxphotonics Co Ltd
Priority date: 2023-09-29
Filing date: 2023-09-29
Publication date: 2024-07-30
Anticipated expiration: 2033-09-29

Abstract

The utility model relates to the technical field of semiconductor lasers, and provides a semiconductor laser module and a semiconductor laser. The semiconductor laser module comprises a plurality of chips and beam shaping assemblies which are arranged in one-to-one correspondence with the chips, wherein each chip is used for outputting pump beams which are parallel to each other, and the beam shaping assemblies are used for collimating and orienting each pump beam so as to convert each pump beam into oblique light. The structure of this case is simple, and application scope is wide, and economic benefits is better, has convenient for improved the power potential of semiconductor laser module greatly.

Description

Semiconductor laser module and semiconductor laser

Technical Field

The present utility model relates to the field of semiconductor laser technology, and in particular, to a semiconductor laser module and a semiconductor laser.

Background

Currently, most of existing single-tube semiconductor lasers use a ladder structure, that is, the chips are placed in a staggered manner, and the centers of the chips are not at the same height. For this purpose, the housing has equally spaced steps, and each step is provided with a laser diode chip. The structure needs to strictly process the step interval and the parallelism when mounting the chip, so the processing cost is high.

On the one hand, the height difference exists in the steps, so that the problem of uneven heat dissipation of the chip can be caused, and the light emitting condition of the chip is further affected; on the other hand, the adjustment of the optical element is also affected by the unavoidable machining tolerances of the steps. Meanwhile, to meet the current demand for increased industrial semiconductor power, the number of single chips of seed sources is also increased, which will reduce the step spacing and further exacerbate the heat dissipation problem that would otherwise exist with the housing.

In order to solve such problems, some prior arts adopt methods of spatially separating light beams using a deviated light path and correcting the direction of the light path after combining the light beams to reduce the application frequency of steps.

In most schemes, optical deflection elements such as a wedge prism or a plurality of reflectors are generally adopted to incline to correct the direction of the optical path after beam combination, the method has high requirements on the inclination angles of the wedge prism and the reflectors during coupling debugging, high-precision processing is required, the difficulty of assembling and debugging operation is high, and two or more optical deflection elements are generally required to be simultaneously inclined to realize the purpose of adjusting the optical path.

Disclosure of utility model

The utility model provides a semiconductor laser module, a semiconductor laser module and a semiconductor laser, which are used for solving the defects in the prior art.

The utility model provides a semiconductor laser module, which comprises a plurality of chips and beam shaping components which are arranged in a one-to-one correspondence manner, wherein each chip is used for outputting pump beams which are parallel to each other, and the beam shaping components are used for collimating and orienting each pump beam so as to convert each pump beam into oblique light;

The semiconductor laser module comprises a fast axis collimation device and a slow axis collimation device which are sequentially arranged along the light path transmission direction of each chip;

each fast axis collimation device is used for carrying out fast axis collimation on the incident light beam;

Each slow axis collimation device is used for carrying out slow axis collimation on an incident light beam, and a preset included angle exists between the light beam subjected to slow axis collimation and the plane of the mounting base plate of the semiconductor laser module;

Each slow axis collimator is an off-axis reflector, and the output beam of each fast axis collimator is incident to the corresponding off-axis reflector at the focus of the corresponding off-axis reflector.

In one embodiment, the off-axis reflector has a reflective concave surface for reflecting an incident light beam, the reflective concave surface being a paraboloid.

In one embodiment, the semiconductor laser module includes at least one coating to cover the concave reflective surface of the off-axis reflector.

In one embodiment, the predetermined included angle may be adjusted according to the off-axis angle of the concave reflective surface.

In one embodiment, each slow axis collimating device comprises a slow axis collimating mirror and a fourth reflecting mirror which are sequentially arranged along the light path transmission direction of the corresponding chip;

The slow axis collimating mirror is used for carrying out slow axis collimation on the incident light beam;

The fourth reflector is used for enabling a preset included angle to exist between the light beam after the slow axis collimation of the corresponding slow axis collimating mirror and the plane of the bottom plate.

Another aspect provides a semiconductor laser including the semiconductor laser module of the above embodiment.

In one embodiment, the light emitting faces of the individual chips are in the same vertical plane and at the same level.

In one embodiment, the semiconductor laser includes a beam combining module for combining the pump beams to form a parallel beam parallel to the plane of the base plate.

Compared with the prior art, the utility model has the following beneficial effects:

The semiconductor laser module comprises a plurality of chips and beam shaping assemblies which are arranged in one-to-one correspondence with the chips, wherein each chip is used for outputting pumping beams which are parallel to each other, and the beam shaping assemblies are used for collimating and orienting each pumping beam so as to convert each pumping beam into oblique light. The structure of this case is simple, and application scope is wide, and economic benefits is better.

Drawings

In order to more clearly illustrate the invention or the technical solutions of the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained according to these drawings without inventive effort.

FIG. 1 is a schematic diagram of an output beam obtained after a conventional oblique stacked beam is incident on a right angle wedge prism;

fig. 2 is a schematic structural diagram of a semiconductor laser module according to the present invention;

FIG. 3 is a schematic view of a periscope type rhombic prism in a semiconductor laser module according to the present invention;

FIG. 4 is a schematic view of the optical path of a periscope type rhombic prism in a semiconductor laser module according to the present invention;

FIG. 5 is a schematic diagram showing the arrangement of a first mirror or a third mirror in a semiconductor laser module according to the present invention;

FIG. 6 is a schematic diagram of an off-axis mirror in a semiconductor laser module according to the present invention;

FIG. 7 is a schematic diagram of a semiconductor laser pump source according to the present invention;

FIG. 8 is a schematic diagram of a side view optical path of a semiconductor laser pump source provided by the present invention;

FIG. 9 is a schematic diagram of a second embodiment of a semiconductor laser pump according to the present invention;

FIG. 10 is a schematic top view of a semiconductor laser pump according to one embodiment of the present invention;

FIG. 11 is a third schematic diagram of a semiconductor laser pump source according to the present invention;

FIG. 12 is a schematic diagram of a second top view of the semiconductor laser pump provided by the present invention;

FIG. 13 is a schematic diagram of a semiconductor laser pump source according to the present invention;

fig. 14 is a schematic structural diagram of a laser provided by the present invention.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

At present, the existing scheme mostly adopts a wedge prism scheme or a plurality of reflectors to incline so as to correct the direction of the light path after beam combination. Taking a wedge prism as an example, as shown in fig. 1. Fig. 1 shows an optical path diagram of an output beam obtained after an inclined stacked beam is incident on a right angle wedge prism, where n ₀₁sin(θ+α)＝n₁₁ sin α, α is a vertex angle of the right angle wedge prism, θ is an inclination angle of a single laser beam with respect to a plane of a base plate, n ₀₁ is a refractive index of air, and n ₁₁ is a refractive index of the right angle wedge prism.

From the above, the wedge prism is based on refraction principle to control the direction of the light path after beam combination, and high precision processing is still required for materials and angles. In addition, the adjustment operation is complex, and in addition, the electro-optical efficiency of the seed source with the structure is only 45 percent, so that the existing power requirement cannot be met.

Based on the above, the embodiment of the invention provides a semiconductor laser module.

Fig. 2 is a schematic structural diagram of a semiconductor laser module according to an embodiment of the present invention, and as shown in fig. 2, the semiconductor laser module includes: the steering compression assembly 1, the beam combining device 2 and the plurality of collimation light path groups are arranged on the plane 0 of the bottom plate, and the steering compression assembly 1 comprises an oblique square prism 11 with an asymmetric vertical section and a plurality of reflecting devices 12;

Each collimating light path group 3 is used for outputting a stacking pump beam which is collimated and forms a preset included angle with the bottom plate plane 0;

The rhombic prism 11 is disposed on an output optical path of the target collimating optical path group 31, and is configured to make the stacked pump beams output by the target collimating optical path group 31 displace in a vertical direction and parallel to a plane of the bottom plate, so as to obtain a first displacement beam;

Each reflecting device 12 is arranged on a transmission optical path of the stacked pump beams output by the non-target collimating optical path group 32 except the target collimating optical path group 31, and is used for enabling the stacked pump beams output by the non-target collimating optical path group 32 to be parallel to the plane of the bottom plate and deflecting the stacked pump beams to the plane of an output optical path of the rhombic prism 11 so as to obtain second displacement beams;

The beam combining device 2 is disposed on the output optical path of the rhombic prism 11, and is configured to combine the second displacement beam with the first displacement beam to obtain a beam combining result.

Specifically, the semiconductor laser module provided in the embodiment of the invention may be a beam combining device for constructing a semiconductor laser pump source, where the beam combining device sequentially includes a plurality of collimating optical path groups, a steering compression assembly 1 and a beam combining device 2, which are disposed on a bottom plate plane 0 along an optical path direction.

The backplane plane 0 may be an upper surface of a backplane plate of a housing in which the semiconductor laser assembly is located, and the backplane plane 0 may be a horizontal plane. The semiconductor laser module can be arranged in the shell, and the protection of the semiconductor laser module can be realized through the shell.

The collimated light path set may include a target collimated light path set 31 and a non-target collimated light path set 32, which are diverted and compressed using different components in the diverting compression assembly 1, respectively. Wherein, the target collimating optical path group 31 and the non-target collimating optical path group 32 can comprise one or more, the number of the target collimating optical path group 31 is equal to that of the rhombic prisms 11 in the steering compression assembly 1, and the number of the non-target collimating optical path group 32 is equal to that of the reflecting devices 12 in the steering compression assembly 1. Only the case where one target collimated light path set 31 and one non-target collimated light path set 32 are included in the semiconductor laser module is shown in fig. 1.

Each collimating optical path group can be used for outputting a stacking pump beam which is collimated and forms a preset included angle with the plane of the bottom plate, and can comprise a plurality of laser chips used for generating initial pump beams, a collimating device used for collimating each initial pump beam to obtain a collimating pump beam and an inclined element used for carrying out optical path direction adjustment on each collimating pump beam so as to enable each collimating pump beam to be stacked in the vertical direction and form a preset included angle with the plane of the bottom plate. Multiple laser chips may be placed side-by-side, as may their corresponding collimating devices and tilting elements.

To reduce the size of the semiconductor laser module and reduce the volume, the tilting element may be a tilting reflecting element, such as a tilting mirror or the like.

The rhombic prism 11 in the steering compression assembly 1 may be tetrahedron, and includes a light incident surface, a light emergent surface and two reflective surfaces opposite to each other in a vertical direction, and the vertical cross section formed by the light incident surface, the light emergent surface and the two reflective surfaces has asymmetric characteristics, that is, the included angle between each reflective surface and the adjacent light incident surface or light emergent surface is different, so by setting the included angle between each reflective surface and the adjacent light incident surface or light emergent surface, stacked pump beams incident to different positions of the rhombic prism 11 can be emitted parallel to the plane of the bottom plate.

The rhombic prism 11 may be disposed on an output optical path of the target collimating optical path set 31, and is configured to make the stacked pump beams output by the target collimating optical path set 31 generate displacement in a vertical direction and parallel to the plane of the bottom plate, so as to eliminate a preset included angle between the stacked pump beams output by the target collimating optical path set 31 and the plane of the bottom plate, and further obtain a first displacement beam.

In order to facilitate the adjustment of the height of the rhombic prism 11, the rhombic prism 11 may be disposed on a base, and the height of the base may be adaptively adjusted according to the stacking height of the stacked pump beams output by the target collimating optical path group 31, so that the flexibility of the rhombic prism 11 may be improved without increasing the difficulty of installation and debugging of the rhombic prism 11.

Because the stacked pump beam output by the target collimating optical path set 31 has a preset included angle with the plane of the bottom plate, when the stacked pump beam is incident on the rhombic prism 11, the stacked pump beam is incident on different positions on the incident surface of the rhombic prism 11, and then the output first displacement beam can be controlled to generate displacement in the vertical direction compared with the stacked pump beam by reasonably setting the included angle between two reflecting surfaces in the rhombic prism 11 and the adjacent light incident surface or light emergent surface, and is parallel to the plane of the bottom plate.

Here, the stacked pump beam is displaced in a vertical direction, and the first displacement beam may be displaced upward with respect to the stacked pump beam.

Each reflecting device 12 is disposed on a transmission optical path of the stacked pump beam output by the non-target collimating optical path set 32 except the target collimating optical path set 31, and is configured to make the stacked pump beam output by the non-target collimating optical path set 32 parallel to the plane of the base plate, so as to eliminate a preset included angle between the stacked pump beam output by the non-target collimating optical path set 32 and the plane of the base plate, and deflect the stacked pump beam to the plane of the output optical path of the target collimating optical path set 32 in the horizontal direction, so as to obtain a second displacement beam.

Here, the number of second shift beams is equal to the number of reflection devices 12 and also equal to the number of collimated optical path groups. The output optical path plane of the target collimating optical path group 32 is the vertical plane in which the output optical path of the target collimating optical path group 32 is located.

The first displacement beam and the second displacement beam are parallel to the plane of the bottom plate, and the second displacement beam and the first displacement beam may be both in the same vertical plane, i.e. both in the output optical path plane of the target collimating optical path group 32, or in two vertical planes perpendicular to each other, i.e. in the output optical path plane of the target collimating optical path group 32 and in a vertical plane perpendicular to the output optical path plane, respectively, which are not specifically limited herein.

The reflecting device 12 may be one reflecting mirror or may be a reflecting mirror group formed of two reflecting mirrors having opposite reflecting surfaces, and is not particularly limited herein. It should be noted that, since the reflecting device 12 is used to make the stacked pump beams output by the non-target collimated light path set 32 parallel to the plane 0 of the base plate, when the reflecting device 12 is a reflecting mirror, the plane of the reflecting mirror is at an angle to the plane 0 of the base plate. Similarly, when the reflecting device 12 is a mirror group formed by two mirrors with opposite reflecting surfaces, the plane of one mirror in the mirror group forms an angle with the plane 0 of the base plate.

The beam combining device 2 may be a beam combining prism, and may be disposed on an output optical path of the rhombic prism 11, so that the first displacement beam may directly enter the incident surface of the beam combining device 2, and since the second displacement beam is deflected to the output optical path plane of the rhombic prism 11, the second displacement beam and the first displacement beam may be combined by the beam combining device 2 to obtain a beam combining result.

Here, the first displacement beam and the second displacement beam may be incident on the same incidence plane or different incidence planes of the beam combining device 2. When the rhomb prism 11 includes a plurality of the first displacement light beams, the different first displacement light beams may be incident on the same incidence plane or different incidence planes of the beam combining device 2. When the reflecting means 12 comprises a plurality, the different second displacement beams may also be incident on the same or different incidence planes of the beam combining means 2.

And then, focusing the beam combination result to serve as a semiconductor laser pumping source, so that working substances in the resonant cavity can be excited by the semiconductor laser pumping source to generate laser.

The semiconductor laser module provided in the embodiment of the invention comprises: the steering compression assembly comprises an oblique square prism and a plurality of reflecting devices, wherein the cross section of the oblique square prism is asymmetric in the vertical direction. According to the semiconductor laser module, the oblique square prism with the asymmetric cross section in the vertical direction is introduced into the steering compression assembly, the stacked pump light beams are enabled to generate displacement in the vertical direction through the reflection principle, and then the first displacement light beams parallel to the plane of the bottom plate are obtained, the requirement on the inclination angle of the oblique square prism is lower in the subsequent coupling test, and the adjustment operation difficulty of subsequent coupling debugging can be reduced. Moreover, through the combination of the rhombic prism and the reflecting device, two displacement beams which are not at the same horizontal height are generated, so that the expansion difficulty of the number of the collimation light path groups is reduced, more stacked pump beams can be introduced into the semiconductor laser module, the possibility that even if the number of the collimation light path groups is increased, a spatial beam combination can be formed is ensured, and the power potential of the semiconductor laser pump source is greatly improved. The semiconductor laser module has the characteristics of simple structure, simple light path and the like, and has great application advantages.

On the basis of the above embodiment, the semiconductor laser module provided in the embodiment of the present invention is characterized in that the rhombic prism is a periscope type rhombic prism, a first included angle exists between a first reflecting surface in a light path transmission direction in the periscope type rhombic prism and a light incident surface, a second included angle exists between a second reflecting surface in the light path transmission direction in the periscope type rhombic prism and a light emergent surface, and the first included angle is unequal to the second included angle; the first reflecting surface and the second reflecting surface are oppositely arranged in the vertical direction, and the light incident surface is parallel to the light emergent surface.

Specifically, as shown in fig. 3, the structure of the periscope type rhombic prism is schematically shown, and the periscope type rhombic prism may include a light incident surface 111, a first reflecting surface 112, a second reflecting surface 113, and a light emergent surface 114 sequentially disposed along the optical path transmission direction, where in fig. 3, the light incident surface 111 is a left side surface, the first reflecting surface 112 is a second surface from top to bottom, the second reflecting surface 113 is an upper side surface, and the light emergent surface 114 is a right side surface.

The first reflecting surface 112 and the second reflecting surface 113 are disposed opposite to each other in the vertical direction.

The light incident surface 111 and the light exiting surface 114 may be parallel to the plane 0 of the bottom plate, or may form a certain included angle with the plane of the bottom plate, which is not specifically limited herein.

The first reflecting surface 112 and the adjacent light incident surface 111 form a first included angle, the second reflecting surface 113 and the adjacent light emergent surface 114 form a second included angle, the first included angle and the second included angle are unequal, and the first included angle and the second included angle can be acute angles or obtuse angles, and are determined according to practical situations.

As shown in fig. 4, the optical path diagram of the periscope type rhombic prism is shown, a first angle between the first reflecting surface 112 and the light incident surface 111 is α, a second angle between the second reflecting surface 113 and the light emergent surface 114 is β, and α+.β. Thus, asymmetry can be realized, and the stacked pump beams output by the target collimation optical path group are parallel to the plane of the bottom plate by adjusting the first included angle alpha and the second included angle beta.

In the embodiment of the invention, the first reflecting surface and the second reflecting surface in the periscope type rhombic prism are oppositely arranged in the vertical direction, so that the stacked pump light beams output by the target collimation light path group can be displaced in the vertical direction. Through setting up first contained angle and second contained angle inequality, so can guarantee periscope formula rhombic prism has the asymmetry in vertical direction cross-section, and then through setting up the concrete value of suitable first contained angle and second contained angle, can make the stack pumping light beam of target collimation light path group output and bottom plate plane parallel, finally output first displacement light beam.

Based on the above embodiments, the semiconductor laser module provided in the embodiments of the present invention may set the light incident surface 111 and the light emergent surface 114 in the periscope type rhombic prism to be perpendicular to the plane 0 of the bottom plate, so that the processing in the periscope type rhombic prism may be facilitated, and the processing difficulty and the processing cost may be reduced.

Based on the above embodiment, in the semiconductor laser module provided in the embodiment of the present invention, the relationship between the first angle and the second angle is determined based on an angle between the stacked pump beam output by the target collimating optical path group and the plane of the bottom plate and a refractive index of the periscope type rhombic prism.

Specifically, the included angle between the stacked pump beam output by the target collimating optical path group and the bottom plate plane 0 may be denoted as θ ₁, and the refractive index of the periscope type rhombic prism may be denoted as n ₁. After the stacked pump light beams output by the target collimation light path group are incident to the rhombic prism, the stacked pump light beams output by the target collimation light path group can be determined to generate displacement in the vertical direction and be parallel to the plane of the bottom plate under the condition that the refraction law and the reflection law are satisfied.

In this process, the determining factors of the relation between the first included angle and the second included angle are the included angle between the stacked pump beams output by the target collimating optical path set and the plane of the bottom plate and the refractive index of the periscope type rhombic prism. It can be understood that, because the periscope type rhombic prism is fixed in position, the included angle between the stacked pump beams output by the target collimating optical path group and the plane of the bottom plate is fixed, and at this time, the incident angle of the stacked pump beams output by the target collimating optical path group on the incident surface of the periscope type rhombic prism is also fixed.

In the embodiment of the invention, the relation between the first included angle and the second included angle can be determined by the included angle between the stacked pump light beams output by the target collimation light path group and the plane of the bottom plate and the refractive index of the periscope type rhombic prism, so that the principle is simple and the calculation is easy.

Based on the foregoing embodiment, the relationship between the first angle and the second angle of the semiconductor laser module provided in the embodiment of the present invention is determined based on the following formula:

Wherein α is the first included angle, β is the second included angle, n ₀ is the refractive index of air, n ₁ is the refractive index of the periscope type rhombic prism, and θ ₁ is the included angle between the stacked pump light beams output by the target collimating light path group and the plane of the bottom plate.

Specifically, as shown in fig. 4, when the light incident surface 111 and the light emergent surface 114 of the periscope type rhombic prism are perpendicular to the plane of the bottom plate, the incident angle of the stacked pump beams output by the target collimating optical path group on the light incident surface 111 is equal to the included angle between the stacked pump beams output by the target collimating optical path group and the plane of the bottom plate, and both the incident angles are θ ₁. Further, by using the law of refraction and the law of reflection, it is possible to determine the relationship between the first angle α and the second angle β, which are the first displacement light beam emitted from the light emitting surface of the periscope type rhombic prism, parallel to the horizontal plane, that is, there is:

Where n ₀＝n₀₁ is the refractive index of air and n ₁ is the refractive index of a periscope type rhombic prism.

And then, according to the quantitative relation between alpha and beta, the related parameters of the periscope type rhombic prism can be reasonably designed to obtain a first displacement beam.

In the embodiment of the invention, the specific quantitative relation between the first included angle and the second included angle is provided, so that the periscope type rhombic prism meeting the requirements can be conveniently and rapidly designed.

Based on the above embodiment, the semiconductor laser module provided in the embodiment of the present invention, the plurality of collimating optical path groups include the target collimating optical path group and a first non-target collimating optical path group; the reflecting device corresponding to the first non-target collimation light path group comprises a first reflecting mirror and a second reflecting mirror;

The first reflector is used for enabling the stacked pump beams output by the first non-target collimation optical path group to be parallel to the plane of the bottom plate and reflecting the stacked pump beams output by the first non-target collimation optical path group to the second reflector;

The highest point of the second reflecting mirror coincides with the lowest point of the first displacement beam or is lower than the lowest point;

The second reflector is used for reflecting the incident light beam to the beam combining device.

Specifically, the semiconductor laser module can comprise two types of collimation light path groups, and the two types of collimation light path groups are distinguished by different structures in the corresponding steering compression assembly. The two types of collimation light path groups can be a target collimation light path group and a first non-target collimation light path group respectively, and the number of the first non-target collimation light path group can be one or more.

The target collimated light path set corresponds to an rhomb prism in the steering compression assembly, the first non-target collimated light path set corresponds to a reflective device in the steering compression assembly, and the reflective device may include a first mirror and a second mirror. The first mirror and the second mirror may constitute a mirror group.

The first reflecting mirror may be disposed on the output light path of the first non-target collimating light path group, the second reflecting mirror may be disposed under the output light path of the rhombic prism, and a certain included angle may exist between the first reflecting mirror and the direction of the output light path of the first non-target collimating light path group and the plane of the bottom plate, as shown in fig. 5, so that the stacked pump light beam output by the first non-target collimating light path group may be parallel to the plane of the bottom plate through the first reflecting mirror, and the stacked pump light beam output by the first non-target collimating light path group is reflected to the right under the output light path of the rhombic prism, and the second displacement light beam is obtained through reflection by the second reflecting mirror. The second shifted beam is transmitted along a reflected light path of the second mirror to the beam combining device.

The first displacement light beam is directly transmitted to the beam combining device along the output light path of the rhombic prism, and the beam combining device can receive the first displacement light beam and the second displacement light beam on the same incidence plane, combine the first displacement light beam and the second displacement light beam and output a beam combining result.

In order to prevent the second reflecting mirror from influencing the transmission of the first displacement beam output by the rhombic prism, the highest point of the second reflecting mirror and the lowest point of the first displacement beam are overlapped or the highest point of the second reflecting mirror is slightly lower than the lowest point of the first displacement beam, so that the first displacement beam and the second displacement beam can be spliced in the vertical direction. At this time, the lowest point of the first displacement beam and the highest point of the second displacement beam are coincident or have only a small distance, and the first displacement beam and the second displacement beam can be regarded as a collimated parallel beam.

Based on the above embodiment, the semiconductor laser module provided in the embodiment of the present invention, the plurality of collimation optical path groups further includes a second non-target collimation optical path group;

The reflecting device corresponding to the second non-target collimation light path group comprises a third reflecting mirror;

The third reflecting mirror is used for enabling the stacked pump beams output by the second non-target collimation light path group to be parallel to the plane of the bottom plate and reflecting the stacked pump beams output by the second non-target collimation light path group to the beam combining device.

Specifically, in the embodiment of the present invention, the semiconductor laser module may further include a third type of collimating optical path group, that is, a second non-target collimating optical path group, where the number of the second non-target collimating optical path group may be one or more.

The second set of non-target collimated light paths may correspond to a reflective device in the steering compression assembly, and the reflective device may include a third mirror. The third reflecting mirror may have a certain included angle with the output light path direction of the second non-target collimation light path group and the plane of the bottom plate, and the placement angle of the third reflecting mirror may also be as shown in fig. 5. And the stacked pump beams output by the second non-target collimation optical path group can be parallel to the plane of the bottom plate through the third reflecting mirror, so that a second displacement beam is obtained. The second displacement light beam is transmitted to a beam combining device on the reflection light path of the third reflector, and the beam combining device and the first displacement light beam are combined to obtain a beam combining result.

It can be understood that, since the beam combining device is disposed on the output optical path of the rhomb prism, the first displacement beam can be incident to the beam combining device through the first vertical plane of the beam combining device, and the second displacement beam can be incident to the beam combining device through the second vertical plane of the beam combining device. Wherein the first vertical plane may be perpendicular to the second vertical plane.

In the embodiment of the invention, the semiconductor laser module can increase the second non-target collimation light path group through the second reflecting mirror, so that the output power of the semiconductor laser module is improved.

On the basis of the above embodiment, each collimating optical path group of the semiconductor laser module provided in the embodiment of the present invention includes a plurality of laser chips with light emitting surfaces in the same vertical plane and the same horizontal height, and a fast axis collimating device and a slow axis collimating device sequentially arranged along the optical path transmission direction of each laser chip;

each laser chip is used for outputting a pumping beam;

each slow axis collimation device is used for carrying out slow axis collimation on an incident light beam, and a preset included angle exists between the light beam after the slow axis collimation and the plane of the bottom plate.

Specifically, in the embodiment of the invention, each collimating optical path group may include a plurality of laser chips, and a fast axis collimating device and a slow axis collimating device that are sequentially disposed along the optical path transmission direction of each laser chip, the light emitting surfaces of the laser chips may be disposed at the same vertical plane and the same horizontal height, each laser chip may form a laser chip group, and further the fast axis collimating devices corresponding to each laser chip may form a fast axis collimating device group, and the slow axis collimating devices corresponding to each laser chip may form a slow axis collimating device group.

Because the luminous surfaces of the laser chips are all at the same vertical plane and the same horizontal height, compared with a semiconductor laser module which is arranged at different step heights by arranging the laser chips, the volume can be reduced, and the applicability is wider.

The pump laser output by the laser chip is usually elliptical, the divergence angle in the vertical direction is relatively large, the beam quality is good, the beam is called a fast axis, the divergence angle in the horizontal direction is relatively small, and the beam quality is poor, and the beam is called a slow axis. In order to obtain good coupling effect, the light beams in two directions need to be collimated respectively, wherein the element for carrying out fast axis collimation on the pump laser is a fast axis collimation device, and the element for carrying out satisfied collimation on the pump laser is a slow axis collimation device. Therefore, through each fast axis collimating device and each slow axis collimating device, the coupling effect of the subsequent beam combination result can be improved, and the transmission quality of the beam combination result can be ensured conveniently.

The directions of the light emitting surfaces of the laser chips in each collimating light path group are the same, when an even number of collimating light path groups exist, the light emitting surfaces of the laser chips in each two collimating light path groups can be oppositely arranged, and when an odd number of collimating light path groups exist, one collimating light path group exists, wherein the light emitting surfaces of the laser chips and the light emitting surfaces of the laser chips in the adjacent collimating light path groups are arranged in the same direction.

Each fast axis collimator may include a Fast Axis Collimator (FAC), each fast axis collimator being disposed on the light-emitting surface of a corresponding laser chip.

Each slow axis collimator may include a Slow Axis Collimator (SAC) and a mirror at an angle to both the plane of the base plate and the direction of transmission of the incident beam. Here, the slow axis collimating mirror may be a cylindrical mirror, and the mirrors in the slow axis collimating devices corresponding to the laser chips are all parallel.

Each laser chip can be used for outputting a pump beam, and the pump beam can be sequentially subjected to a fast axis collimating device and a slow axis collimating device which correspond to the laser chips to obtain a collimated pump beam with a preset included angle with the plane of the bottom plate. The collimated pump beams corresponding to all laser chips may form a stacked pump beam having a predetermined angle with the plane of the base plate.

It is understood that the incident light beam is specific to the particular device.

In the embodiment of the invention, the pump light beam output by the laser chip is collimated by combining the fast axis collimating device and the slow axis collimating device, so that the collimating effect can be improved, a preset included angle exists between the collimated light beam and the plane of the bottom plate, and the stacking of the collimated pump light beam can be realized.

On the basis of the above embodiment, in the semiconductor laser module provided in the embodiment of the present invention, each slow axis collimating device includes a slow axis collimating mirror and a fourth reflecting mirror sequentially arranged along the optical path transmission direction of the corresponding laser chip;

The fourth reflecting mirror is used for enabling the light beam after the slow axis collimation of the corresponding slow axis collimating mirror to have the preset included angle with the plane of the bottom plate.

Specifically, each slow axis collimating device in the semiconductor laser module may further include a slow axis collimating mirror and a fourth reflecting mirror that are sequentially disposed along the optical path transmission direction of the corresponding laser chip. The slow axis collimating lens can be a conventional slow axis collimating lens, an integrated cylindrical lens array, a brand new blue light meniscus type slow axis collimating lens and the like, and is used for carrying out slow axis collimation on incident light beams. The incident beam is the pump laser output by the corresponding laser chip.

The fourth reflecting mirror can be a conventional reflecting mirror, can form a certain included angle with an output light path of the slow axis collimating mirror, and forms a preset included angle with the plane of the bottom plate, so that a preset included angle exists between a light beam after the slow axis collimation of the corresponding slow axis collimating mirror and the plane of the bottom plate.

It will be appreciated that the reflecting surfaces of the fourth mirrors may be parallel so that the reflected light paths of the fourth mirrors are all in a vertical plane, thereby ensuring that the stacked pump beams are obtained.

In the embodiment of the invention, each stacked pump beam can be obtained through the structures of the slow-axis collimating mirror and the fourth reflecting mirror.

In the prior art, laser after being collimated by a fast axis reaches a focusing lens by a slow axis cylindrical lens and a reflecting mirror, and finally, a light spot is focused by the focusing lens and enters an optical fiber for transmission. In the process, the reflector has the characteristics of high reflection coating sensitivity to angle and reflection efficiency changing along with the angle, and the incidence angle of laser on the reflector has larger deviation from the setting angle of the reflector, so that the reflection efficiency is low. In addition, the adjustment of the reflector is manually or automatically performed, and the accuracy requirement on the adjustment is high.

In order to solve the above technical problems, based on the above embodiments, in the semiconductor laser module provided in the embodiments of the present invention, each slow axis collimating device is an off-axis reflector, and an output beam of each fast axis collimating device is incident to a corresponding off-axis reflector at a focal point of the corresponding off-axis reflector.

In particular, each slow axis collimation device may be an off-axis mirror, the optical path diagram of which may be as shown in fig. 6.

The off-axis reflector is a surface reflector, in particular a concave reflector, and is structurally characterized in that an incident surface and an emergent surface are the same surface, namely a reflecting surface, and the reflecting surface is plated with a high reflecting film. The reflecting surface is a curved surface, and can be a spherical surface, an aspherical surface, a paraboloid and the like.

Unlike conventional flat-plate type mirrors, off-axis mirrors have two characteristics. Firstly, the reflecting surface of the off-axis reflecting mirror is a paraboloid, and the distances from any point on the reflecting surface to the quasi-line are equal; and the off-axis reflector has the characteristic of off-axis angle relative to a general parabolic spherical mirror. Off-axis angle is the angle formed by the focused beam and the collimated beam, and different values of off-axis angle can be obtained by intercepting different positions of the parent paraboloid.

Therefore, when the parallel light is incident on the reflecting surface with the substrate perpendicular to the off-axis reflector, the off-axis reflector can scatter the unfocused parallel light beam, reflect and converge the light to the off-axis focus. Similarly, according to the principle of reversibility of the optical path, if the laser starts at the focus of the off-axis reflector, the laser passes through the reflecting surface of the off-axis collimating mirror and is collimated and output.

In the embodiment of the invention, the output light beam of each fast axis collimating device is incident to the corresponding off-axis reflecting mirror at the focus of the corresponding off-axis reflecting mirror, so that a preset included angle exists between the output light beam of the fast axis collimating device and the plane of the bottom plate on the basis of carrying out slow axis collimation on the output light beam of the fast axis collimating device through the off-axis reflecting principle of the off-axis reflecting mirror.

In the embodiment of the invention, the off-axis reflecting mirror based on the off-axis reflecting principle is introduced as a slow-axis collimating device, the transmission and refraction principles used by the original slow-axis collimating mirror are abandoned, and the slow-axis collimating mirror and the reflecting mirror in the original structure are combined in structure and function.

The off-axis reflector is used as a slow-axis collimating device, and compared with a structure of combining the slow-axis collimating mirror with the reflector, the off-axis reflector has the following five advantages:

1) Reduce the optical path

Obviously, the off-axis mirror incorporating the mirror and the conventional slow-axis collimator takes up less physical space, so that the existing structure will have a shorter working length than the original structure, and the housing structure is expected to be designed more compactly.

2) Reduces the coating cost

In the optical structure based on the conventional slow axis collimating mirror and the reflecting mirror, the conventional slow axis collimating mirror is a spherical or aspheric cylindrical mirror, laser enters a glass medium through the plane of the cylindrical mirror, is shaped into parallel light through the convex surface of the cylindrical mirror, and is finally reflected to the focusing lens by the reflecting mirror arranged behind the slow axis collimating mirror. For the conventional scheme, at least three surface coating films are needed in the process of the slow axis collimating mirror and the reflecting mirror to reduce the loss of laser power. However, for the off-axis reflector, only the concave surface is used as the reflecting surface, the purpose of reflecting and collimating light spots can be achieved based on the reflecting principle, the surface coated reflecting film can meet the working requirements, and the coating cost can be reduced.

3) The material requirement for the lens is not high

According to the principle mentioned in point 2), it can be seen that the off-axis mirror adopts the reflection principle. Therefore, the refraction problem of the lens material is not needed to be considered, and the reflection and collimation functions can be realized by using a few low-cost common glass materials (such as K9).

4) Reduces the difficulty of assembling and adjusting

The off-axis reflector is integrated in structure, and the reflecting angle is designed in advance, so that the requirement on the angle adjusting precision is not high. And when the working distance of the corresponding off-axis reflector is determined, the functions of reflection and collimation can be completed.

5) Eliminating phase retardation and absorption loss of transmission element

The off-axis reflector works by utilizing the reflection principle, so that the defects of phase delay and absorption loss of transmission optical elements such as spherical cylindrical mirrors and the like can be avoided, and the energy loss in laser transmission is reduced. In addition, the off-axis mirror is substantially unaffected by the wavelength and therefore does not produce chromatic aberration, and therefore does not produce chromatic aberration even over a broad range of operating wavelengths.

6) A more compact optical path system structure can be realized.

As shown in fig. 7, on the basis of the above embodiment, the embodiment of the present invention further provides a semiconductor laser pumping source, including: the fast and slow axis focusing device group 71, the output optical fiber 72, and the semiconductor laser module 73 provided in the above embodiments.

The combined beam output from the semiconductor laser module 73 is coupled into the output fiber 72 via the fast and slow axis focusing device group 71.

Specifically, a semiconductor laser module 73, a fast and slow axis focusing device group 71, and an output optical fiber 72 may be sequentially disposed in the semiconductor laser pump source along the propagation direction of the optical path. The fast-slow axis focusing device group 71 may include a fast-axis focusing lens group and a slow-axis focusing lens group sequentially arranged along the propagation direction of the optical path.

As shown in fig. 8, the semiconductor laser module 73 of the semiconductor laser pump source includes a target collimating light path group 731, an oblique prism 732, a reflecting device 733 and a beam combining device 734, and the stacked pump beams output by the target collimating light path group 731 are subjected to the oblique prism 732 to obtain a first displacement beam, and the first displacement beam is incident to the beam combining device 734. The stacked pump beams output by the non-target collimating optical path set sequentially pass through the first reflector and the second reflector in the reflector 733 to obtain a second displacement beam, the second displacement beam is incident to the beam combining device 734, and the first displacement beam and the second displacement beam are combined by the beam combining device 734. In fig. 8, the semiconductor laser pump source further includes a fast-axis focusing mirror group 711 and a slow-axis focusing mirror 712.

The semiconductor laser pumping source provided by the embodiment of the invention comprises the semiconductor laser module, so that the requirement on the inclination angle of the rhombic prism is lower in the subsequent coupling test, and the difficulty of the subsequent coupling debugging in the debugging operation can be reduced. Moreover, through the combination of the rhombic prism and the reflecting device, two displacement beams which are not at the same horizontal height are generated, so that the expansion difficulty of the number of the collimation light path groups is reduced, more stacked pump beams can be introduced into the semiconductor laser module, the possibility that even if the number of the collimation light path groups is increased, a spatial beam combination can be formed is ensured, and the power potential of the semiconductor laser pump source is greatly improved. The semiconductor laser pumping source has the characteristics of simple structure, simple optical path and the like, and has great application advantages.

As shown in fig. 8, on the basis of the above embodiment, the semiconductor laser pumping source provided in the embodiment of the present invention further includes: the filter 74 is disposed between the semiconductor laser module 73 and the fast-slow axis focusing device group 71, and the filter 74 is specifically disposed between the beam combining device 734 and the fast-axis focusing lens group 711, for protecting the semiconductor laser module 73 and preventing stray light from entering the semiconductor laser module 73 to damage the semiconductor laser module.

As shown in fig. 9, the semiconductor laser module 73 of the semiconductor laser pump source includes two collimating optical path groups, and the semiconductor laser pump source may include a bottom plate 70, where the semiconductor laser module 73, the fast and slow axis focusing device group 71, and the output optical fiber 72 are all disposed on a bottom plate plane 0 of the bottom plate 70. Each of the collimated optical path groups in the semiconductor laser module 73 includes a laser chip group 735, a fast axis collimator lens group, and an off-axis mirror group 736 as a slow axis collimator lens group. Because the luminous surfaces of the laser chips in the laser chip set are all at the same vertical plane and the same horizontal height, compared with a semiconductor laser pumping source which is arranged at different step heights, the volume can be reduced, and the applicability is wider.

The reflecting device 733 includes a first reflecting mirror 7331 and a second reflecting mirror 7332. Only the case where each laser chip set 735 includes 15 laser chips is shown in fig. 9. Accordingly, the fast axis collimator set includes 15 fast axis collimators, and the off-axis mirror set 736 includes 15 off-axis mirrors.

The stacked pump beams output by the target collimating optical path group 731 pass through the rhombic prism 732 to obtain a first displacement beam, and the first displacement beam is incident to the beam combining device 734. The stacked pump beams output by the first non-target collimated beam path set pass through the reflecting device 733 to obtain a second shifted beam, and the second shifted beam is incident on the beam combining device 734 directly below the first shifted beam.

Fig. 10 is a schematic top view of the optical path of the structure of fig. 9.

As shown in fig. 11, the semiconductor laser module 73, which is a semiconductor laser pumping source, includes two collimating optical path groups, and unlike fig. 9, the slow axis collimating device group in fig. 11 includes a slow axis collimating lens group 737 and a reflecting mirror group 738, and the slow axis collimating lens in the slow axis collimating lens group 737, the fast axis collimating lens in the fast axis collimating lens group, and the reflecting mirror in the reflecting mirror group 738 are in one-to-one correspondence.

Fig. 12 is a schematic top view of the optical path of the structure of fig. 11.

As shown in fig. 13, in the structure of the semiconductor laser module 73 of the semiconductor laser pump source including three collimating optical path groups, one collimating optical path group and its corresponding third mirror 739 are added compared to fig. 11.

As shown in fig. 14, on the basis of the above embodiment, there is further provided a laser according to an embodiment of the present invention, including: a resonant cavity 142 provided with a working medium 141, and a semiconductor laser pump source 143 provided in the above embodiments;

the target pump beam output from the output fiber in the semiconductor laser pump source 143 acts on the working medium 141 to generate laser.

Specifically, the laser provided in the embodiment of the present invention may have different types according to the material of the working medium 141 used, for example, if the material of the working medium is bulk doped crystal or glass, the laser is a solid laser, if the material of the working medium is an optical fiber, the laser is an optical fiber laser, and if the material of the working medium is a semiconductor material such as gallium arsenide, indium gallium arsenide, etc., the laser may be a semiconductor laser.

The laser provided in the embodiment of the invention uses the semiconductor laser pumping source to act on the working medium 141, so that the working medium 141 is stimulated to generate laser. The laser adopts the semiconductor laser pumping source to apply the rhombic prism, so that the difficulty in installing and adjusting the optical path after correction can be reduced on the basis of confirming the parameters of the rhombic prism. The laser has the characteristics of simple structure and simple light path.

The apparatus embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.

From the above description of the embodiments, it will be apparent to those skilled in the art that the embodiments may be implemented by means of software plus necessary general hardware platforms, or of course may be implemented by means of hardware. Based on this understanding, the foregoing technical solution may be embodied essentially or in a part contributing to the prior art in the form of a software product, which may be stored in a computer readable storage medium, such as ROM/RAM, a magnetic disk, an optical disk, etc., including several instructions for causing a computer device (which may be a personal computer, a server, or a network device, etc.) to execute the method described in the respective embodiments or some parts of the embodiments.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. The semiconductor laser module is characterized by comprising a plurality of chips and beam shaping assemblies which are arranged in a one-to-one correspondence manner, wherein each chip is used for outputting pump beams which are parallel to each other, and each beam shaping assembly is used for collimating and orienting each pump beam so as to convert each pump beam into oblique light;

each fast axis collimation device is used for carrying out fast axis collimation on an incident light beam;

Each slow-axis collimating device is an off-axis reflecting mirror, and the output light beam of each fast-axis collimating device is incident to the corresponding off-axis reflecting mirror at the focus of the corresponding off-axis reflecting mirror.

2. The semiconductor laser module of claim 1, wherein the off-axis reflector has a concave reflective surface for reflecting an incident beam, the concave reflective surface being a paraboloid.

3. The semiconductor laser module of claim 2, wherein the semiconductor laser module comprises at least one coating to cover the concave reflective surface of the off-axis reflector.

4. The semiconductor laser module of claim 2, wherein the predetermined included angle is adjustable according to an off-axis angle of the concave reflective surface.

5. The semiconductor laser module of claim 1, wherein each of the slow axis collimating devices comprises a slow axis collimating mirror and a fourth reflecting mirror sequentially arranged along the optical path transmission direction of the corresponding chip;

6. A semiconductor laser comprising a semiconductor laser module according to any one of claims 1-5.

7. The semiconductor laser of claim 6, wherein the light emitting surfaces of each of the chips are in the same vertical plane and at the same horizontal level.

8. The semiconductor laser of claim 7, wherein the semiconductor laser includes a beam combining module for superimposing each of the pump beams into a parallel beam parallel to the plane of the base plate.