CN116667154A - High-power semiconductor laser fiber coupling system based on total reflection - Google Patents

High-power semiconductor laser fiber coupling system based on total reflection Download PDF

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Publication number
CN116667154A
CN116667154A CN202310668426.3A CN202310668426A CN116667154A CN 116667154 A CN116667154 A CN 116667154A CN 202310668426 A CN202310668426 A CN 202310668426A CN 116667154 A CN116667154 A CN 116667154A
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CN
China
Prior art keywords
array
semiconductor laser
isosceles right
laser
total reflection
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Pending
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CN202310668426.3A
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Chinese (zh)
Inventor
郑婉华
李奎奎
张伟桥
周旭彦
胡满
司婷玉
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Weifang Advanced Photoelectric Chip Research Institute
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Weifang Advanced Photoelectric Chip Research Institute
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Priority to CN202310668426.3A priority Critical patent/CN116667154A/en
Publication of CN116667154A publication Critical patent/CN116667154A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02255—Out-coupling of light using beam deflecting elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention discloses a high-power semiconductor laser fiber coupling system based on total reflection, and belongs to the technical field of lasers. The device comprises two groups of semiconductor laser array modules, a fast and slow axis collimating mirror array, a dichroic mirror for wavelength beam combination, a reflecting mirror for light path deflection, a beam shrinking device and a focusing mirror for coupling light beams into optical fibers; and filling a dark area in the fast axis direction by adopting an isosceles right prism group based on total reflection. The wavelength of each array in each group of semiconductor laser array module is the same, and the semiconductor laser fiber coupling system can obtain high-power output while achieving the purpose of beam shaping.

Description

High-power semiconductor laser fiber coupling system based on total reflection
Technical Field
The invention relates to the field of semiconductor lasers, in particular to a high-power semiconductor laser fiber coupling system based on total reflection.
Background
The semiconductor laser has the advantages of high efficiency, small volume, long service life, wide wavelength range, direct electric drive and the like, and is widely applied to the fields of industry, military, medical treatment, communication and the like. Along with the development demands of the semiconductor laser pump solid state laser technology and the semiconductor laser pump optical fiber technology, how to obtain a semiconductor laser pump source with high brightness and high power is very important.
At present, the beam quality of a high-power semiconductor is improved mainly by geometric beam shaping technology, namely, filling a dark area between bars by cutting and rearranging a slow-axis beam. At present, although there are many patents related to beam shaping of dopa, there are generally problems of complicated shaping device, long optical path, unfavorable operation, etc., and the refractive index and the inclination angle of the shaping device need to be strictly controlled.
Disclosure of Invention
The invention aims to provide a high-power semiconductor laser fiber coupling system based on total reflection so as to achieve the purpose of beam shaping.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a high-power semiconductor laser optical fiber coupling system based on total reflection is characterized in that: the system comprises a plurality of groups of semiconductor laser array modules, a plurality of collimating mirror arrays for collimating the semiconductor laser array and a dichroic mirror for combining wavelength beams; each group of stacked modules comprises a plurality of stacked arrays; filling a dark area in the fast axis direction by adopting a plurality of isosceles right prism groups with total reflection, and compressing the light width in the fast axis by a beam compressing device; each mirror is used to turn the optical path and the focusing mirror is used to couple the light beam into the multimode optical fiber.
As a preference, two groups of stacked modules are used, each group of stacked modules comprises two stacked arrays, each stacked array consists of 8 mini-bars, and the bar spacing in the stacked arrays is 1.8mm. A single mini-bar in the stacked array is collimated by a fast axis and a slow axis, and the stacked array with the same wavelength is filled in a dark area in the fast axis direction through an isosceles right prism group; the purpose of turning the light path is achieved through the reflector; combining the wavelengths of the array stacking modules with different wavelengths through a dichroic mirror; the beam shrinking device is used for shrinking beams in the fast axis direction, and then the beams are coupled into the optical fiber through the aspheric focusing lens.
Preferably, the wavelengths of the two groups of semiconductor laser stacked modules are respectivelyWherein, two stacked arrays with the same wavelength form a group of semiconductor laser stacked array modules. The bar is mini-bar.
Preferably, each collimating lens array includes a fast axis collimating lens and a slow axis collimating lens which are sequentially arranged, wherein the fast axis collimating lens is an aspheric micro-cylindrical lens, and the slow axis collimating lens is a micro-lens array.
Preferably, the dichroic mirror surface is plated withIs a film of (a). The first two-three reflecting mirrors are plated with high-reflection film layers for carrying out 90-degree turning on the light beams.
Preferably, the length of the hypotenuse of the isosceles right prism set is at least twice the width of the slow axis beam of the incident light source.
The thickness of the middle right angle prism in the isosceles right angle prism group is at least equal to the thickness of the incident light spot along the fast axis direction. The height difference of the adjacent isosceles right prisms along the fast axis direction is equal to twice the height difference of the incident light spots along the fast axis direction.
Preferably, the focusing lens is an aspherical focusing lens, which functions to couple the light beam into the target optical fiber. The beam shrinking device is formed by arranging a plane convex column lens and a plane concave column lens.
Preferably, in the isosceles right prism group, the single prism group is formed by stacking and fixing a plurality of isosceles right prisms which are arranged at intervals along the vertical direction.
And each group of stacked incident light spots with the same wavelength, wherein one light spot corresponds to the hypotenuse of the isosceles right prism group, and the other light spot corresponds to the right angle side of the isosceles right prism group.
The first laser beam passes through the first laser beam in the isosceles right prism group I in a straight line transmission way.
The second laser passes through the first isosceles right-angle prism group sequentially according to the structural sequence, is reflected for 2 times in the first isosceles right-angle prism group, and then is combined with the laser emitted by the first stacked array; the laser wavelength of the first stacked array is the same as that of the second stacked array.
The invention has the advantages that the refractive index and the inclination angle of the shaping device are not required to be strictly controlled, the device is simple, the dense arrangement of fast axis light beams can be realized, the power is high, and the system module is small in volume.
The wavelength of each array in each group of semiconductor laser array module is the same, and the semiconductor laser fiber coupling system can obtain high-power output while achieving the purpose of beam shaping.
Drawings
FIG. 1 is a schematic diagram of a high power semiconductor laser fiber coupling system based on total reflection;
fig. 2 is a schematic diagram of a structural perspective view of an isosceles right prism group of a high-power semiconductor laser fiber coupling system based on total reflection (the front is the hypotenuse of an isosceles right triangle);
FIG. 3 is a schematic diagram of a propagation path of a single output beam of a semiconductor laser stack through an isosceles right prism set;
FIG. 4 is a schematic diagram of a fast axis beam-shrinking of a high power semiconductor laser fiber coupling system based on total reflection;
in the figure, a first semiconductor laser array 1, a second semiconductor laser array 2, a third semiconductor laser array 3, a fourth semiconductor laser array 4, a first collimating lens array 5, a second collimating lens array 6, a third collimating lens array 7, a fourth collimating lens array 8, a first isosceles right angle prism group 9, a second isosceles right angle prism group 10, a dichroic mirror 11, a first reflecting mirror 12, a second reflecting mirror 13, a third reflecting mirror 14, a plano-convex cylindrical lens 15 in a beam shrinking device, a plano-concave cylindrical lens 16 in the beam shrinking device, a focusing mirror 17 and a multimode optical fiber 18.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Referring to fig. 1, the high-power semiconductor laser fiber coupling system based on total reflection in the present embodiment includes a semiconductor laser array 1, a semiconductor laser array 2, a semiconductor laser array 3, a semiconductor laser array 4, a collimator lens array 5, a collimator lens array 6, a collimator lens array 7, a collimator lens array 8, an isosceles right angle prism group 9, an isosceles right angle prism group 10, a dichroic mirror 11, a first mirror 12, a second mirror 13, a third mirror 14, a plano-convex cylindrical lens 15 in a beam shrinking device, a plano-concave cylindrical lens 16 in a beam shrinking device, a focusing mirror 17, and a multimode fiber 18.
The high-power semiconductor laser fiber coupling system based on total reflection adopts two groups of semiconductor laser array stacking modules, each group of array stacking modules comprises two array stacks 1, 2 or 3 and 4, each array stack consists of 8 mini-bars, and the bar spacing in the array stacks is 1.8mm; a single mini-bar in the stacked array is collimated by a fast and slow axis collimating lens array 5, 6, 7 and 8, and the stacked array with the same wavelength fills a dark area in the fast axis direction by an isosceles right prism group 9 and 10; the purpose of turning the light path is achieved by the reflectors 12, 13 and 14; the wavelength combination is carried out on the array stacking modules with different wavelengths through the dichroic mirror 11; the plano-convex cylindrical lens 15 and the plano-concave cylindrical lens 16 in the beam shrinking device are used for shrinking beams in the fast axis direction, and the beams are coupled into the multimode optical fiber 18 through the aspheric focusing lens 17.
For the first semiconductor laser array 1, the second semiconductor laser array 2, the third semiconductor laser array 3 and the fourth semiconductor laser array 4, the laser outputs respectively pass through the first collimating lens array 5, the second collimating lens array 6, the third collimating lens array 7 and the fourth collimating lens array 8 to be collimated.
The wavelengths of the two groups of semiconductor laser stacked array modules are respectivelyWherein, two stacked arrays with the same wavelength form a group of semiconductor laser stacked array modules. The bar is mini-bar.
Each collimating lens array (5), (6), (7) and (8) comprises a fast axis collimating lens and a slow axis collimating lens which are sequentially arranged, wherein the fast axis collimating lens is an aspheric micro-cylindrical lens, and the slow axis collimating lens is a micro-lens array.
The surface of the dichroic mirror is plated withIs a film of (a). The first two-three reflecting mirrors are plated with high-reflection film layers for carrying out 90-degree turning on the light beams.
The length of the hypotenuse of the isosceles right prism group is at least twice the width of the slow axis beam of the incident light source.
The thickness of the middle right angle prism in the isosceles right angle prism group is at least equal to the thickness of the incident light spot along the fast axis direction. The height difference of the adjacent isosceles right prisms along the fast axis direction is equal to twice the height difference of the incident light spots along the fast axis direction.
The focusing lens is an aspheric focusing lens and is used for coupling light beams into the target optical fiber. The beam shrinking device is formed by arranging a plano-convex cylindrical lens and a plano-concave cylindrical lens.
In the isosceles right prism group, a single prism group is formed by stacking and fixing 8 isosceles right prisms which are arranged at intervals along the vertical direction. See fig. 2.
And each group of stacked incident light spots with the same wavelength, wherein one light spot corresponds to the hypotenuse of the isosceles right prism group, and the other light spot corresponds to the right angle side of the isosceles right prism group.
The first laser beam passes through the first laser beam in sequence according to the structural sequence, and passes through the isosceles right prism group I9 in a straight line.
The second laser is reflected 2 times in the first isosceles right prism group 9, and then is combined with the laser emitted by the first stacked array; the laser wavelength of the first stacked array 1 is the same as that of the second stacked array 2.
The semiconductor laser array stacking module comprises an array stacking fourth (4), a collimating mirror array fourth (8), an isosceles right-angle prism group II (10) and a dichroic mirror (11), which are sequentially arranged in the machine body, and a fourth path of laser sequentially passes through the structure sequence, and the laser linearly transmits in the isosceles right-angle prism group II (10) and is subjected to wavelength beam combination with the laser of the array stacking first (1) through the dichroic mirror (11); the laser of the first stacked array is different from the laser of the fourth stacked array in wavelength;
the third laser passes through the isosceles right prism group II (10) in sequence according to the structure sequence, is reflected for 2 times in the isosceles right prism group II (10), and then is combined with the laser of the fourth laser stack (4); the laser wavelength of the third stacked array is the same as that of the fourth stacked array.
The light beam incident surfaces of the lens and the prism are plated with antireflection films, and the light beam reflecting surfaces are plated with antireflection films.
The dichroic mirror 11 performs wavelength combination of two sets of semiconductor laser stacks of different wavelengths.
As shown in fig. 3, the isosceles right prism group 1 and the isosceles right prism group 10 fill the collimated beam in the fast axis by using total reflection of light. The optical power is improved to be twice of the original optical power, and the quality of the fast axis light beam is kept unchanged.
As shown in fig. 4, the plano-convex cylindrical lens 15 in the beam shrinking device and the plano-concave cylindrical lens 16 in the beam shrinking device expand the residual divergence angle of the fast axis by two times, and the spot size of the fast axis is halved. The pre-focus spot approximates a square spot.
The combined light spots are coupled into a multimode optical fiber 18 through a focusing mirror 17, so that high-power output is realized.

Claims (10)

1. A high-power semiconductor laser optical fiber coupling system based on total reflection is characterized in that: the device comprises a plurality of groups of semiconductor laser stacked array modules, a plurality of collimating mirror arrays (5), (6), (7) and (8) for collimating the semiconductor laser stacked array, and a dichroic mirror (11) for combining the wavelength beams; each group of stacked modules comprises a plurality of stacked arrays; filling a dark area in the fast axis direction by adopting a plurality of isosceles right prism groups (9) and (10), and compressing the light width in the fast axis by using a beam shrinking device; each mirror (12), (13), (14) is used to turn the optical path and a focusing mirror (17) is used to couple the light beam into a multimode optical fiber (18).
2. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: two groups of semiconductor laser array modules are adopted, each group of array module comprises two arrays, each array consists of 8 mini-bars, and the bar spacing in the array is 1.8mm; a single mini-bar in the stacked array is collimated by a fast axis and a slow axis, and the stacked array with the same wavelength is filled in a dark area in the fast axis direction through an isosceles right prism group; the purpose of turning the light path is achieved through the reflector; combining the wavelengths of the array stacking modules with different wavelengths through a dichroic mirror; the beam shrinking device is used for shrinking beams in the fast axis direction, and then the beams are coupled into the optical fiber through the aspheric focusing lens.
3. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: the wavelengths of the two groups of semiconductor laser stacked array modules are respectivelyIn which the wavelength isThe same two stacked arrays form a group of semiconductor laser stacked array modules.
4. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: each collimating lens array (5), (6), (7) and (8) comprises a fast axis collimating lens and a slow axis collimating lens which are sequentially arranged, wherein the fast axis collimating lens is an aspheric micro-cylindrical lens, and the slow axis collimating lens is a micro-lens array.
5. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: the dichroic mirror (11) is plated withIs an optical film of (a); the first, second and third reflectors (12, 13, 14) are coated with high reflection film layers for 90 DEG refraction of the light beam.
6. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: the length of the hypotenuse of the isosceles right prism groups (9) and (10) is at least twice the width of the slow axis beam of the incident light source; the thickness of the middle right angle prism in the isosceles right angle prism group is at least equal to the thickness of the incident light spot along the fast axis direction; the height difference of the adjacent isosceles right prisms along the fast axis direction is equal to twice the height difference of the incident light spots along the fast axis direction.
7. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: the focusing lens (17) is an aspheric focusing lens and couples the light beam into the target optical fiber (18); the beam shrinking device is formed by arranging a plane convex column lens (15) and a plane concave column lens (16) in sequence.
8. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: in the isosceles right prism groups (9) and (10), a single prism group is formed by stacking and fixing a plurality of isosceles right prisms which are arranged at intervals along the vertical direction; and each group of stacked incident light spots with the same wavelength, wherein one light spot corresponds to the hypotenuse of the isosceles right prism group, and the other light spot corresponds to the right angle side of the isosceles right prism group.
9. The total reflection-based high power semiconductor laser fiber coupling system of claim 1, wherein: the first laser beam passes through the first laser beam in sequence according to the structural sequence, and is transmitted in a straight line in the isosceles right prism group I (9);
the second laser is sequentially transmitted through the first isosceles right prism group (9) according to the structural sequence, reflected for 2 times in the first isosceles right prism group (9) and then combined with the laser emitted by the first stacked array (1); the laser wavelength of the first stacked array is the same as that of the second stacked array.
10. The total reflection-based high power semiconductor laser fiber coupling system of claim 9, wherein: the semiconductor laser array stacking module comprises an array stacking fourth (4), a collimating mirror array fourth (8), an isosceles right-angle prism group II (10) and a dichroic mirror (11), which are sequentially arranged in the machine body, and a fourth path of laser sequentially passes through the structure sequence, and the laser linearly transmits in the isosceles right-angle prism group II (10) and is subjected to wavelength beam combination with the laser of the array stacking first (1) through the dichroic mirror (11); the laser of the first stacked array is different from the laser of the fourth stacked array in wavelength;
the third laser passes through the isosceles right prism group II (10) in sequence according to the structure sequence, is reflected for 2 times in the isosceles right prism group II (10), and then is combined with the laser of the fourth laser stack (4); the laser wavelength of the third stacked array is the same as that of the fourth stacked array.
CN202310668426.3A 2023-06-07 2023-06-07 High-power semiconductor laser fiber coupling system based on total reflection Pending CN116667154A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310668426.3A CN116667154A (en) 2023-06-07 2023-06-07 High-power semiconductor laser fiber coupling system based on total reflection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310668426.3A CN116667154A (en) 2023-06-07 2023-06-07 High-power semiconductor laser fiber coupling system based on total reflection

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CN116667154A true CN116667154A (en) 2023-08-29

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