CN108092130B - A kind of capsulation structure for semiconductor laser - Google Patents
A kind of capsulation structure for semiconductor laser Download PDFInfo
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- CN108092130B CN108092130B CN201711420491.5A CN201711420491A CN108092130B CN 108092130 B CN108092130 B CN 108092130B CN 201711420491 A CN201711420491 A CN 201711420491A CN 108092130 B CN108092130 B CN 108092130B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
- H01S5/02326—Arrangements for relative positioning of laser diodes and optical components, e.g. grooves in the mount to fix optical fibres or lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02253—Out-coupling of light using lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Couplings Of Light Guides (AREA)
- Semiconductor Lasers (AREA)
- Microscoopes, Condenser (AREA)
Abstract
The invention discloses a kind of capsulation structure for semiconductor laser.Slow axis collimating mirror and/or coupling mirror in the individual laser package structure are meniscus.The present invention reduces chip of laser the distance between to slow axis collimating mirror, to reduce the encapsulation volume of semiconductor laser by setting meniscus for the lens in capsulation structure for semiconductor laser；Meniscus is set by coupling mirror simultaneously, decreases the distance of the coupling light beam input optical fibre by coupling mirror.
Description
Technical field
The present invention relates to field of laser device technology, in particular to a kind of capsulation structure for semiconductor laser.
Background technique
In recent years, with the increase of semiconductor laser output power, due to accommodate more optical elements and bigger
Radiator structure cause encapsulation volume constantly to increase, limit semiconductor laser in the application of numerous areas.In the prior art,
The distributing order or chip of laser for mostly using optimization optical element greatly spatially use double-deck or multi-tier arrangement abundant
Using the form in space, or the form for the auxiliary mechanical structure such as cast out some positioning of individual laser package mechanical structure, heat dissipation,
Achieve the purpose that reduce encapsulation volume.But the integral heat sink for having laser in above-mentioned several method respectively is poor, and stability is poor
The problem of.
Summary of the invention
In view of the problems existing in the prior art, a kind of encapsulating structure of semiconductor laser of the invention is proposed, so as to
Overcome the above problem or at least is partially solved the above problem.
To achieve the goals above, present invention employs following technical solutions:
According to one aspect of the present invention, a kind of capsulation structure for semiconductor laser is provided,
Slow axis collimating mirror and/or coupling mirror in the individual laser package structure are meniscus.
Optionally,
The meniscus is monomer lens；
Alternatively,
The meniscus is made of one or more convex lenses and one or more concavees lens.
Optionally,
The meniscus is glass material or optical plastic material.
Optionally, the encapsulating structure of the laser includes: N number of laser, N number of fast axis collimation mirror, N number of slow axis collimation
Mirror, N number of reflecting mirror and a coupling mirror, wherein N number of slow axis collimating mirror and/or coupling mirror are meniscus, N be greater than
Or the natural number equal to 1；
N number of laser, N number of fast axis collimation mirror, N number of slow axis collimating mirror and N number of reflecting mirror are placed in ladder
On bottom plate；
Fast axis collimation mirror, slow axis collimating mirror and reflecting mirror have been sequentially placed before each laser；
The light beam that each laser issues is quasi- by the corresponding fast axis collimation mirror placed and slow axis collimating mirror respectively
After straight, reflecting mirror reflection is reached；After the light beam of all reflections enters coupling mirror focusing, it is coupled into optical fiber.
Optionally, the encapsulating structure of the laser further include: 2N laser, 2N fast axis collimation mirror, first group N number of
Slow axis collimating mirror, N number of second group of slow axis collimating mirror, 2N first kind reflecting mirror, the second class reflecting mirror, a polarization spectro
Piece, a slide and a coupling mirror；Wherein, N number of first group of slow axis collimating mirror is meniscus；Described N number of second
Group slow axis collimating mirror is plano-convex lens；The meniscus is identical as the focal length of the plano-convex lens, and N is more than or equal to 1
Natural number；
The 2N laser, 2N fast axis collimation mirror and 2N first kind reflecting mirror are placed in upper and lower two respectively
On the step board of layer；
Fast axis collimation mirror, second group of slow axis collimation have been sequentially placed before each laser on the upper layer step board
Mirror, first kind reflecting mirror；A polarization spectro piece and a slide are also placed on the upper layer step board；
Fast axis collimation mirror, first group of slow axis collimation have been sequentially placed before each laser on lower layer's step board
Mirror, first kind reflecting mirror；A second class reflecting mirror is also placed on lower layer's step board；
Laser, fast axis collimation mirror, first group of slow axis collimating mirror and the first reflection placed on lower layer's step board
Mirror is nested in the space between the fast axis collimation mirror on the step board of upper layer and second group of slow axis collimating mirror；
The light beam that each laser on the upper layer step board issues is respectively by the corresponding fast axis collimation placed
After mirror and second group of slow axis collimating mirror collimation, reaches first kind reflecting mirror and reflected；
The light beam that each laser on lower layer's step board issues passes through fast axis collimation mirror and first group respectively
After slow axis collimating mirror collimation, after the reflection of first kind reflecting mirror, then through the second class reflecting mirror, slide and polarization spectro piece and upper layer
The light beam that first kind reflecting mirror reflects on step board carries out polarization coupling；The coupled mirror of light beam after all conjunction beams focuses laggard
Enter optical fiber.
Optionally, the encapsulating structure of the laser further include: 2N laser, 2N fast axis collimation mirror, first group N number of
Slow axis collimating mirror, N number of second group of slow axis collimating mirror, N number of reflecting mirror and a coupling mirror；Wherein, N number of first group of slow axis is quasi-
Straight mirror is meniscus；N number of second group of slow axis collimating mirror is plano-convex lens；The meniscus and the plano-convex are saturating
The focal length of mirror is identical, and N is the natural number more than or equal to 1；
The 2N laser, 2N fast axis collimation mirror are placed in respectively on upper and lower two layers of step board；It is described
Second group of slow axis collimating mirror is placed on the bridge-type structure of step board；First group of slow axis collimating mirror is placed on the rank of lower layer
On terraced bottom plate；N number of reflecting mirror is placed on the step board on upper layer；
Fast axis collimation mirror, second group of slow axis collimation have been sequentially placed before each laser on the upper layer step board
Mirror, reflecting mirror；
Fast axis collimation mirror, first group of slow axis collimation have been sequentially placed before each laser on lower layer's step board
Mirror；
Laser, fast axis collimation mirror, the first group of slow axis collimating mirror placed on lower layer's step board are nested in upper layer
In the space between fast axis collimation mirror and second group of slow axis collimating mirror on step board；
The light beam that each laser on the upper layer step board issues is slow by fast axis collimation mirror and second respectively
After axis collimating mirror collimation, reaches reflecting mirror and reflected；
The light beam that each laser on lower layer's step board issues passes through fast axis collimation mirror and first group respectively
After slow axis collimating mirror collimation, after the bridge type bridge opening on step board, the reflecting mirror also reached on the step board of upper layer is carried out
Reflection is coupled into optical fiber after the light beam of all reflections enters coupling mirror focusing.
Optionally, the coupling mirror is meniscus.
Technical solution of the present invention is saturating by setting convex-concave for the slow axis collimating mirror in capsulation structure for semiconductor laser
Mirror reduces chip of laser the distance between to slow axis collimating mirror, to reduce the encapsulation volume of semiconductor laser；Together
When by coupling mirror set meniscus, decrease the distance of the coupling light beam input optical fibre by coupling mirror.
Detailed description of the invention
Fig. 1 is the optical full length schematic diagram of plano-convex lens and meniscus in identical focal length；
Fig. 2 is between one kind provided by one embodiment of the present invention transparent optical full length and refractive index and radius of curvature
Corresponding relationship；
Fig. 3 is a kind of capsulation structure for semiconductor laser top view in the prior art；
Fig. 4 is a kind of capsulation structure for semiconductor laser top view provided by one embodiment of the present invention；
Fig. 5 is a kind of package structure diagram of the semiconductor laser dual layer arrangement provided in the embodiment of the present invention；
Fig. 6 is the package structure diagram of another semiconductor laser dual layer arrangement provided in the embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The slow axis collimating mirror and/or coupling mirror analyzed in capsulation structure for semiconductor laser first are meniscus
Reason.
Fig. 1 is the optical full length schematic diagram of plano-convex lens and meniscus in identical focal length, as shown in Figure 1,10 be flat
Convex lens；d1For the thickness of plano-convex lens；L1For the optical full length of plano-convex lens；20 be meniscus；d2For the thickness of meniscus
Degree；L2For the optical full length of meniscus.
The optical full length L of plano-convex lens1Calculation formula is as follows:
N: refractive index, f: focal length
From the optical full length L of plano-convex lens1Calculation formula it is found that in refractive index n and plano-convex lens d1Certain premise
Under, the overall length L of plano-convex lens1Increase as focal length f increases, and the value range of refractive index n is between 1.4 to 2, d1/n<
d1, so L1It is naturally larger than f.
For the optical length L of the compression lens of high degree1, reduce the encapsulation volume of semiconductor laser, applicant
Expect on the basis of planoconvex lens, introduces a concave surface in plane, while increasing d1Thickness constitute thick lens meniscus lens.Pass through
Concave surface is mobile to lens side front by the image space interarea of lens.Relative to plano-convex lens principal plane locations in lens interior, and convex-concave
Lens can be mobile to convex surface by image space principal plane locations picture and far from lens, and the distance to focus of image space interarea is focal length f.
The optical full length L of meniscus2Calculation formula it is as follows:
N is refractive index；F is focal length；R1For the radius of curvature of optical surface；d2For lens thickness.
By the optical full length L of meniscus2Calculation formula it is found that working as R1When < (n-1) f/n, L2Less than f, in order to more clear
Clear finds out meniscus to the compressed capability of optical full length, and applicant has calculated separately as n, f and d2When for definite value, L2With R1
Variation tendency.As shown in Fig. 2, in f and d2When for definite value, L2With R1Reduction and reduce, subtract with the increase of refractive index n
It is small；As n, R1And d2When in certain proportion, optical full length can be compressed to 1/4 (L of plano-convex lens by meniscus2/L1) left
The right side, high degree has compressed the optical length of lens, to reduce the encapsulation volume of semiconductor laser.
Therefore the present invention provides a kind of capsulation structure for semiconductor laser, the slow axis collimating mirror in the individual laser package structure
And/or coupling mirror is meniscus.Specific embodiment is set forth below the solution of the present invention is further detailed, the present invention
Specific embodiment in, in order to better illustrate technical solution, the laser 1 in Fig. 3 and the laser 1-1 in Fig. 4 are same
A laser, and so on.Laser 51 in Fig. 5 and the laser in Fig. 6 61 are also the same laser, and so on.
Specific embodiment 1
When will be equal to five below with N, and the slow axis collimating mirror in capsulation structure for semiconductor laser is respectively plano-convex lens
It is illustrated with for meniscus.
Fig. 3 is a kind of capsulation structure for semiconductor laser top view in the prior art.As shown in figure 3, the semiconductor swashs
The encapsulating structure of light device includes: 1, five, five lasers, 3, five reflecting mirrors 4 of slow axis collimating mirror of fast axis collimation lens 2, five
With a coupling mirror 5.Wherein, five slow axis collimating mirrors 3 are plano-convex lens.
As can be seen from Figure 3, fast axis collimation lens, slow axis collimating mirror and reflecting mirror have been sequentially placed before each laser；
The light beam that laser 1 issues reaches after the corresponding fast axis collimation lens 2 placed and slow axis collimating mirror 3 collimate
Reflecting mirror 4 reflects；All light beams for issuing arrival reflecting mirror 4 through laser all enter coupling mirror 5 and focus, then are coupled into light
It is fine.
Fig. 4 is a kind of capsulation structure for semiconductor laser top view provided by one embodiment of the present invention.As shown in figure 4,
The encapsulating structure of the laser includes: five laser 1-1, five fast axis collimation mirror 2-1, five slow axis collimating mirror 3-1, five
A reflecting mirror 4-1 and coupling mirror 5-1, wherein five slow axis collimating mirror 3-1 and coupling mirror 5-1 are meniscus, and Fig. 4
In meniscus it is identical as the focal length of the plano-convex lens in Fig. 3.
As can be seen from Figure 4, fast axis collimation mirror, slow axis collimating mirror and reflecting mirror have been sequentially placed before each laser；
After fast axis collimation mirror 2-1 and slow axis collimating mirror 3-1 collimation of the light beam that laser 1-1 is issued by corresponding placement,
Reach reflecting mirror 4-1 reflection；All light beams for issuing arrival reflecting mirror 4-1 through laser all enter coupling mirror 5-1 and focus, then coupling
It closes and enters optical fiber.
From Fig. 3 compared with Fig. 4.Under plano-convex lens and the identical situation of meniscus focal length, slow axis collimating mirror and
When coupling mirror is meniscus, the light beam after can shortening the distance between slow axis collimating mirror and laser and coupling enters optical fiber
Optical path, to reduce the encapsulation volume of semiconductor laser.
Following specific embodiment 2 and specific embodiment 3 be under the conditions of slow axis collimating mirror and coupling mirror are meniscus,
A kind of completely new semiconductor package.
Specific embodiment 2
Fig. 5 is that An embodiment provides a kind of signals of the encapsulating structure of semiconductor laser dual layer arrangement
Figure.It is illustrated so that N is equal to five as an example, as shown in figure 5, the step board in the encapsulating structure of the laser is divided into upper and lower two
Layer, upper layer includes: that 51, five, five lasers, 53, five, fast axis collimation mirror, second group of slow axis collimating mirror, 57, five first kind are anti-
Penetrate mirror 58,511, polarization spectro pieces 50 of coupling mirror and a slide (not marking in Fig. 5)；Lower layer includes: five lasers
52, five 54, five, fast axis collimation mirror the second class of first kind reflecting mirror 56, one of first group of slow axis collimating mirror 55, five reflections
Mirror 59.Wherein, five second group of slow axis collimating mirrors 57 are plano-convex lens, and five first group of slow axis collimating mirrors 55 are meniscus,
And meniscus 55 is identical as the focal length of plano-convex lens 57, coupling mirror is meniscus.
It should be noted that there are a fast axle spot widths to obtain between the corresponding laser of the every two of the upper and lower
Step height is poor, and there is also a spot widths to obtain difference in height between the laser of every interlayer same row, and setting so both may be used
The light beam issued to avoid same interlayer various lasers spatially interferes with each other, can also be to avoid the laser in interlayer same row
Device light beam spatially interferes with each other.
As can be seen from Figure 5, in the present embodiment, laser 54, the fast axis collimation mirror 55, first placed on lower layer's step board
Group slow axis collimating mirror 56 is nested in the sky between the fast axis collimation mirror 53 on the step board of upper layer and second group of slow axis collimating mirror 57
In.
In the present embodiment, the light beam that each laser 51 on the step board of upper layer issues is placed by corresponding respectively
Fast axis collimation mirror 53 and plano-convex lens 57 collimate after, reach first kind reflecting mirror 58 reflected；
The light beam that each laser 52 on lower layer's step board issues is saturating by fast axis collimation mirror 54 and convex-concave respectively
After mirror 55 collimates, after the reflection of first kind reflecting mirror 56, then through the second class reflecting mirror 59, slide and polarization spectro piece 50 and upper layer
The light beam that first kind reflecting mirror 58 reflects on step board carries out polarization coupling；The coupled mirror 511 of light beam after all conjunction beams is poly-
It is defocused to enter optical fiber.
Meniscus in the present embodiment is glass material or optical plastic material.And in the present embodiment
Meniscus can also be made of one or more convex lenses and one or more concavees lens.
Capsulation structure for semiconductor laser in the present embodiment 2, by being closed in Shu Tiji in normal single layer step space,
Using the meniscus of ultrashort light path, nested one layer of chip of laser again between laser and lens in this way can be with keeping body
Under the premise of product is constant, the quantity of chip of laser can be double, improves the output power of laser.
Specific embodiment 3
Fig. 6 is to be equal to An embodiment provides a kind of encapsulation knot of semiconductor laser dual layer arrangement with N
It is illustrated for five, as shown in fig. 6, the step board in the encapsulating structure of the laser is divided into upper and lower two layers, upper layer packet
It includes: five 61, five, laser, 63, five, fast axis collimation mirrors second group of slow axis collimating mirror 66, five reflecting mirrors 68, coupling mirror
69；Lower layer includes: 62, five, five lasers, 64, five, fast axis collimation mirror, first group of slow axis collimating mirror 65.Wherein, second group
Slow axis collimating mirror 66 is plano-convex lens, is arranged on the bridge-type structure on step board, and first group of slow axis collimating mirror 65 is convex-concave
Lens, and meniscus 65 is identical as the focal length of plano-convex lens 66, coupling mirror is meniscus.
It should be noted that there are a fast axle spot widths to obtain between the corresponding laser of the every two of the upper and lower
Step height is poor, and there is also a spot widths to obtain difference in height between the laser of every interlayer same row, and setting so both may be used
The light beam issued to avoid same interlayer various lasers spatially interferes with each other, can also be to avoid the laser in interlayer same row
Device light beam spatially interferes with each other.
As shown in fig. 6, in the present embodiment 3, laser 62, the fast axis collimation mirror 64 and placed on lower layer's step board
One group of slow axis collimating mirror 65 is nested between the fast axis collimation mirror 63 on the step board of upper layer and second group of slow axis collimating mirror 66
In space.
The light beam that each laser 61 on the step board of upper layer issues is respectively by the peaceful convex lens of fast axis collimation mirror 63
After mirror 66 collimates, reaches reflecting mirror 68 and reflected；
The light beam that each laser 62 on lower layer's step board issues is saturating by fast axis collimation mirror 64 and convex-concave respectively
After mirror 65 collimates, after the bridge type bridge opening 67 on step board, also reaches reflecting mirror 68 and reflected, the light beam of all reflections
After focusing into coupling mirror 69, it is coupled into optical fiber.
Meniscus in the present embodiment is glass material or optical plastic material.And in the present embodiment
Meniscus can also be made of one or more convex lenses and one or more concavees lens.
Semiconductor package in the present embodiment 3, except through being closed in Shu Tiji in normal single layer step space, benefit
With the meniscus of ultrashort light path, nested one layer of chip of laser again between laser and lens can keep volume in this way
Under the premise of constant, the quantity of chip of laser can be double, except the output power for improving laser, by upper layer laser and
Underlying laser shares a reflecting mirror and is reflected, and reduces the optical device of individual laser package structure, to save object
Expect cost.
The technical scheme is that being shortened by setting meniscus for the slow axis collimating mirror in individual laser package structure
Chip of laser is the distance between to slow axis collimating mirror, to reduce the encapsulation volume of semiconductor laser；Simultaneously by coupling
It closes mirror and is set as meniscus, decrease the distance of the coupling light beam input optical fibre by coupling mirror.
The above description is merely a specific embodiment, under above-mentioned introduction of the invention, those skilled in the art
Other improvement or deformation can be carried out on the basis of the above embodiments.It will be understood by those skilled in the art that above-mentioned tool
Body description only preferably explains that the purpose of the present invention, protection scope of the present invention should be subject to the protection scope in claims.
Claims (4)
1. a kind of capsulation structure for semiconductor laser, which is characterized in that
Slow axis collimating mirror/or coupling mirror in the individual laser package structure are meniscus；
The encapsulating structure of the laser further include: 2N laser, 2N fast axis collimation mirror, N number of first group of slow axis collimating mirror,
N number of second group of slow axis collimating mirror, N number of reflecting mirror and a coupling mirror；Wherein, N number of first group of slow axis collimating mirror is convex
Concavees lens；N number of second group of slow axis collimating mirror is plano-convex lens；The focal length phase of the meniscus and the plano-convex lens
Together, N is the natural number more than or equal to 1；
The 2N laser, 2N fast axis collimation mirror are placed in respectively on upper and lower two layers of step board；Described second
Group slow axis collimating mirror is placed on the bridge-type structure of step board；First group of slow axis collimating mirror is placed on the ladder bottom of lower layer
On plate；N number of reflecting mirror is placed on the step board on upper layer；
Fast axis collimation mirror, second group of slow axis collimating mirror, anti-has been sequentially placed before each laser on the upper layer step board
Penetrate mirror；
Fast axis collimation mirror, first group of slow axis collimating mirror have been sequentially placed before each laser on lower layer's step board；
Laser, fast axis collimation mirror, the first group of slow axis collimating mirror placed on lower layer's step board are nested in upper layer ladder
In the space between fast axis collimation mirror and second group of slow axis collimating mirror on bottom plate；
The light beam that each laser on the upper layer step board issues is quasi- by fast axis collimation mirror and the second slow axis respectively
After straight mirror collimation, reaches reflecting mirror and reflected；
The light beam that each laser on lower layer's step board issues passes through fast axis collimation mirror and first group of slow axis respectively
After collimating mirror collimation, after the bridge type bridge opening on step board, the reflecting mirror also reached on the step board of upper layer is reflected,
After the light beam of all reflections enters coupling mirror focusing, it is coupled into optical fiber.
2. individual laser package structure as described in claim 1, which is characterized in that
The meniscus is monomer lens；
Alternatively,
The meniscus is made of one or more convex lenses and one or more concavees lens.
3. individual laser package structure as described in claim 1, which is characterized in that
The meniscus is glass material or optical plastic material.
4. individual laser package structure as described in claim 1, which is characterized in that the coupling mirror is meniscus.
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| CN109504752A (en) * | 2018-12-29 | 2019-03-22 | 广州市锐博生物科技有限公司 | Mixed wavelengths laser system and sequenator |
| US10651355B1 (en) * | 2018-11-15 | 2020-05-12 | Nlight, Inc. | High-power laser diode package implemented with meniscus slow axis collimator for reduced diode package footprint or improved laser output brightness |
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| CN201191323Y (en) * | 2007-11-09 | 2009-02-04 | 王仲明 | Construction integrating duplex splitted semiconductor laser into single optical fiber |
| CN201331603Y (en) * | 2008-12-08 | 2009-10-21 | 王仲明 | Laser module coupling multi-path semi-conductor laser into single optical fiber |
| CN103368070A (en) * | 2012-03-29 | 2013-10-23 | 山东华光光电子有限公司 | Fiber coupled semiconductor laser with indication light and packaging method thereof |
| CN202837616U (en) * | 2012-07-27 | 2013-03-27 | 北京大族天成半导体技术有限公司 | Structure capable of coupling beams of two semiconductor lasers |
| CN203117474U (en) * | 2013-02-21 | 2013-08-07 | 王涛 | Laser package coupled device |
| CN203629792U (en) * | 2013-12-11 | 2014-06-04 | 中国科学院苏州生物医学工程技术研究所 | Device performance measuring apparatus of semiconductor laser bar |
| CN203811855U (en) * | 2014-04-29 | 2014-09-03 | 鞍山创鑫激光技术有限公司 | Coupling system coupling multi-beam semiconductor laser into single optical fiber |
| CN104538845B (en) * | 2014-12-30 | 2018-03-20 | 深圳市博锐浦科技有限公司 | More single-tube semiconductor laser fiber coupling packagings |
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| JPS60216596A (en) * | 1984-04-12 | 1985-10-30 | Matsushita Electric Ind Co Ltd | Semiconductor laser device with photo-isolator |
| EP0259018B1 (en) * | 1986-09-02 | 1991-10-16 | Amp Incorporated | Optoelectronics package for a semiconductor laser |
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