CN203398519U - Inclined-surface type multi-diode semiconductor laser coupling device - Google Patents
Inclined-surface type multi-diode semiconductor laser coupling device Download PDFInfo
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- CN203398519U CN203398519U CN201320456535.0U CN201320456535U CN203398519U CN 203398519 U CN203398519 U CN 203398519U CN 201320456535 U CN201320456535 U CN 201320456535U CN 203398519 U CN203398519 U CN 203398519U
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Abstract
The utility model relates to an inclined- surface type multi-diode semiconductor laser coupling device, in which multiple laser diodes are fixed on different inclined step surfaces, with high flatness, of a bottom plate. When at work, the laser diodes emit lights with different heights. The lights are collimated via fast-axis collimators (FAC) and slow-axis collimators (SAC) to thereafter become parallel light beams, which are steered by reflectors and therefore are concentrated within an area. After passing through a collimator, the concentrated light beams are focused into an optical fiber. All units of the inclined- surface type multi-diode semiconductor laser coupling device are fixed on the different inclined step surfaces of the bottom plate. The inclined surfaces of the bottom plate are easy to machine with high precision, and the high flatness can lead to excellent heat-dissipating performance.
Description
Technical field
The utility model relates to a kind of good heat dissipation effect, makes coupling device simple, the high-power multitube semiconductor laser of coupling efficiency ramp type high, good beam quality, belongs to semiconductor laser field.
Background technology
Semiconductor laser, owing to having the many merits such as volume is little, lightweight, efficiency is high, is widely used in the various fields such as industry, military affairs, medical treatment, communication.Due to the restriction of self quantum well waveguiding structure, the output beam quality of semiconductor laser and CO
2the conventional laser such as laser, solid YAG laser are compared poor, have hindered the expansion of its application.In recent years, development along with epitaxial growth of semiconductor material growing technology, semiconductor laser waveguiding structure optimisation technique, passivating cavity surface technology, high stability encapsulation technology, high efficiency and heat radiation technology, particularly the demand driving of direct semiconductor laser industrial process applications and high power fiber laser pumping source have high-power, the semiconductor laser develop rapidly of high light beam quality.
In China, the technology of using single-tube semiconductor laser part direct-coupling to enter optical fiber acquisition Laser output is tending towards ripe, and at present domestic several companies are used optical fiber power output and the foreign level of single tube substantially suitable.Yet along with the increase of semiconductor laser range of application, the power of the semiconductor laser of single-chip can not meet the demand of power and brightness far away.Asymmetry due to semiconductor laser output beams, quick shaft direction good beam quality, can be shaped to the hot spot that width only has 200 μ m-300 μ m, a plurality of chip laser assemblings are carried out to space at various height and close bundle, then be coupled into an optical fiber output, the power output that not only can make optical fiber lifting at double, also can improve the brightness of optical fiber output simultaneously greatly.
At present, what most multitube semiconductor laser closed that bundle adopts is all ledge structure, base plate is processed as to the step rising successively, and a laser diode chip is installed on each step.This method has higher coupling efficiency, and reliability is better, but, this method will on base plate, working height be poor very little high-precision step (as shown in Figure 1), difficulty of processing is large and processing cost is high, in order to guarantee that semiconductor laser is welded to the radiating effect after step, to the evenness of each step require highly, existing process equipment is difficult to meet the demands.
Summary of the invention
The problem that the purpose of this utility model exists in order to overcome above-mentioned prior art, and provide a kind of ramp type multitube semiconductor laser coupling device, base plate of the present utility model has an inclined plane that requires that reaches high-flatness through grinding and polishing, then a plurality of laser diode welded and installed are fixed on the inclined plane of base plate, the light that laser diode sends focuses in an optical fiber after by optical element shaping, realizes and has the high power of excellent heat dissipation property, the semiconductor laser of high light beam quality.
The purpose of this utility model is achieved through the following technical solutions.
A multitube semiconductor laser coupling device, comprises base plate, laser diode, fast axis collimation mirror FAC, slow axis collimating mirror SAC, speculum, collimating lens, optical fiber; It is characterized in that:
Described base plate is for there being the surface of an inclination along X-axis, a plurality of laser diodes are separately fixed on the different step surfaces of base plate along the straight line of inclined-plane incline direction; Fast axis collimation mirror FAC, slow axis collimating mirror SAC, speculum are separately fixed on the different step surfaces of base plate;
Each laser diode has corresponding fast axis collimation mirror FAC, a slow axis collimating mirror SAC and a speculum; Each laser diode and corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC and speculum are fixing point-blank and be parallel to Y-axis;
The light-emitting area of the laser diode that the optical axis alignment of each fast axis collimation mirror FAC is corresponding;
The light-emitting area of the laser diode that the optical axis alignment of each slow axis collimating mirror SAC is corresponding, and with the optical axis coincidence of fast axis collimation mirror FAC;
Each speculum is placed with XY face is vertical, and is 45 ° with the optical axis included angle of corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC;
Collimating lens optical axis is parallel to X-axis to be placed, and the light of speculum reflection is focused on optical fiber.
Base plate of the present utility model utilizes inclined-plane to manufacture the difference in height of laser diode, and the base plate of inclined-plane form is easy to processing, and cost is lower and can guarantee strict evenness.
The utility model also comprises a plurality of substrates, and a plurality of substrates are separately fixed at base plate, and each laser diode is arranged on a substrate.Described substrate is to be made by good heat conduction effect and the good material of insulation effect.
Described base plate is to be made by the high material of thermal conductivity, and other respective element are all on the surface of the inclination of base plate, and element thermal diffusion is balanced.Base plate can be fixed on to (water-cooled, air cooling) on refrigerating plant.
All laser diodes, fast axis collimation mirror FAC, slow axis collimating mirror SAC, speculum are all fixed on base plate with scolder or glue.
A multitube semiconductor laser coupling method, is characterized in that:
1) light that each laser diode sends is after the collimation of corresponding fast axis collimation mirror FAC, and light is converging perpendicular to bevel direction as directional light;
2) light after fast axis collimation mirror FAC collimation arrives corresponding slow axis collimating mirror SAC, and the shaping Hou，Guang inclined-plane incline direction of process slow axis collimating mirror SAC converges as directional light;
3) through fast axis collimation mirror FAC, slow axis collimating mirror SAC collimation after light after the reflection of corresponding speculum, optical path-deflecting 90 °;
4) all directional lights after overshoot arrive collimating lens, and light focuses on optical fiber after collimating lens.
A plurality of laser diodes are fixed on the surface of inclination, therefore produce the different light beam of a plurality of height, produce the different collimated light beam of height after fast axis collimation mirror FAC, slow axis collimating mirror SAC separately; After the reflection of speculum, arrive collimating lens, the different collimated light beam of a plurality of height focuses on optical fiber after collimating lens.
The inclination angle on inclined-plane makes adjacent laser diode equal collimated light beam after fast axis collimation mirror FAC, the slow axis collimating mirror SAC shaping width on Z axis in the difference in height of Z-direction.
The size of the speculum that the utility model is used is identical, Installation and Debugging are simple, adjacent mirror equals adjacent laser diode in the difference in height of Z-direction in the difference in height of Z-direction, speculum can reflect corresponding light beam completely, and the speculum nearer apart from collimating lens can not block the light that the speculum far away apart from collimating lens is reflected back.
The utility model contrast prior art has following effect:
What the utility model sent a plurality of laser diodes is optically coupled in together, has realized high-power semiconductor laser.Method of the present utility model has realized higher coupling efficiency, and good beam quality, and reliability is high.
The base plate that is processed with inclined plane using in the utility model, easily processing, evenness is higher, compares with conventional method, has advantages of easy processing, low cost and perfect heat-dissipating.
Accompanying drawing explanation
Fig. 1 is the semiconductor laser coupling apparatus structure schematic diagram of existing step.
Fig. 2 is structural representation of the present utility model.
Fig. 3 is that a plurality of collimated light beams of the utility model arrive the hot spot schematic diagram before collimating lens.
Label declaration: 1.1-1.6 is respectively laser diode, 2.1-2.6 is respectively fast axis collimation lens FAC, and 3.1-3.6 is respectively slow axis collimating lens SAC, 4.1-4.6 is respectively speculum, 5-collimating lens, 6-optical fiber, 7-base plate, 8.1-8.6 is respectively substrate.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.
As shown in Figure 2, the utility model comprises base plate 7, six laser diodes (1.1-1.6), six fast axis collimation mirror FAC(2.1-2.6), six slow axis collimating mirror SAC(3.1-3.6), six speculums (4.1-4.6), collimating lens 5, optical fiber 6, six substrates (8.1-8.6); It is characterized in that:
Described base plate 7 is for there being the surface of an inclination along X-axis, six substrates (8.1-8.6) are separately fixed on the different step surfaces of base plate 7 along the straight line of inclined-plane incline direction, and six laser diodes (1.1-1.6) are arranged on respectively six substrates (8.1-8.6); Six fast axis collimation mirror FAC(2.1-2.6), six slow axis collimating mirror SAC(3.1-3.6), six speculums (4.1-4.6) are separately fixed on the different step surfaces of base plate;
Each laser diode has corresponding fast axis collimation mirror FAC, a slow axis collimating mirror SAC and a speculum; Each laser diode and corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC and speculum are fixing point-blank and be parallel to Y-axis;
The light-emitting area of the laser diode that the optical axis alignment of each fast axis collimation mirror FAC is corresponding;
The light-emitting area of the laser diode that the optical axis alignment of each slow axis collimating mirror SAC is corresponding, and with the optical axis coincidence of fast axis collimation mirror FAC;
Each speculum is placed with XY face is vertical, and is 45 ° with the optical axis included angle of corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC;
Collimating lens 5 optical axises are parallel to X-axis to be placed, and the light of all speculum reflections is focused on optical fiber 6.
Because all laser diodes are because waveguiding structure causes its far field light beam seriously asymmetric.Optical axis perpendicular to bevel direction is fast axle, and light is larger in the angle of divergence of fast axle; The optical axis of inclined-plane incline direction is slow axis, and light is less in the angle of divergence of slow axis.
Wherein substrate is to be made by good heat conduction effect and the good material of insulation effect, and laser diode is arranged on substrate, forms CoS(chip-on-submount);
Wherein, the width at quick shaft direction that h is hot spot, l is that adjacent substrate is in the spacing on inclined-plane incline direction.
Six substrates disperse to be fixed on the inclined plane of base plate 7 along inclined-plane incline direction, and the light that each laser diode is sent is propagated along Y direction.
Six fast axis collimation mirror FAC are post lens, and light laser diode being sent on perpendicular to bevel direction carries out shaping, and the light beam after shaping is becoming directional light perpendicular to bevel direction.Each fast axis collimation mirror FAC is fixed on corresponding substrate with glue.
Six slow axis collimating mirror SAC carry out shaping to the light after the fast axis collimation mirror FAC collimation through corresponding on a post lens ， inclined-plane incline direction, and the direction that the light beam after shaping tilts on inclined-plane converges as directional light.Each slow axis collimating mirror SAC is fixed on base plate 7 with glue.
Six bundle light respectively through corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC collimation after collimated light beam at the cross section perpendicular to direction of propagation glazing as shown in A, B, C, D, E, F in Fig. 3, light beam is flat, light beam is longer in the length of slow-axis direction, shorter in the length of quick shaft direction.
Speculum is placed perpendicular to XY face, and 45 ° of corresponding optical axis included angles.Light process speculum rear is to having changed 90 °.Light beam advances along Y-axis through before speculum, after speculum, along X-axis, advances.
Light a plurality of light beams after the reflection of speculum overlap in X, Y direction, and in Z-direction, height is different, form light beam heap.Fig. 3 is that light beam enters collimating lens 5 cross section of light beam heap before.
The light beam heap that a plurality of collimated light beams form is after collimating lens 5, and light focuses in the focus of collimating lens 5.
The end face of optical fiber 6 is aimed at the focus of collimating lens 5, and fiber end face is perpendicular to optical axis.
Claims (5)
1. a ramp type multitube semiconductor laser coupling device, comprises base plate, a plurality of laser diode, a plurality of fast axis collimation mirror FAC, a plurality of slow axis collimating mirror SAC, a plurality of speculum, collimating lens, optical fiber; It is characterized in that:
Described base plate is for there being the surface of an inclination along X-axis, a plurality of laser diodes are separately fixed on the different step surfaces of base plate along the straight line of inclined-plane incline direction; A plurality of fast axis collimation mirror FAC, a plurality of slow axis collimating mirror SAC, a plurality of speculum are separately fixed on the different step surfaces of base plate;
Each laser diode has corresponding fast axis collimation mirror FAC, a slow axis collimating mirror SAC and a speculum; Each laser diode and corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC and speculum are fixing point-blank and be parallel to Y-axis;
The light-emitting area of the laser diode that the optical axis alignment of each fast axis collimation mirror FAC is corresponding;
The light-emitting area of the laser diode that the optical axis alignment of each slow axis collimating mirror SAC is corresponding, and with the optical axis coincidence of fast axis collimation mirror FAC;
Each speculum is placed with XY face is vertical, and is 45 ° with the optical axis included angle of corresponding fast axis collimation mirror FAC, slow axis collimating mirror SAC;
Collimating lens optical axis is parallel to X-axis to be placed, and the light of all speculum reflections is focused on optical fiber.
2. a kind of ramp type multitube semiconductor laser coupling device according to claim 1, is characterized in that: also comprise a plurality of substrates, a plurality of substrates are separately fixed at base plate, and each laser diode is arranged on a substrate.
3. a kind of ramp type multitube semiconductor laser coupling device according to claim 1, is characterized in that: described base plate is to be made by the high material of thermal conductivity.
4. a kind of ramp type multitube semiconductor laser coupling device according to claim 2, is characterized in that: described substrate is to be made by good heat conduction effect and the good material of insulation effect.
5. a kind of ramp type multitube semiconductor laser coupling device according to claim 1 and 2, is characterized in that: all laser diodes, fast axis collimation mirror FAC, slow axis collimating mirror SAC, speculum are all fixed on base plate with scolder or glue.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320456535.0U CN203398519U (en) | 2013-07-29 | 2013-07-29 | Inclined-surface type multi-diode semiconductor laser coupling device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320456535.0U CN203398519U (en) | 2013-07-29 | 2013-07-29 | Inclined-surface type multi-diode semiconductor laser coupling device |
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| CN203398519U true CN203398519U (en) | 2014-01-15 |
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| CN201320456535.0U Withdrawn - After Issue CN203398519U (en) | 2013-07-29 | 2013-07-29 | Inclined-surface type multi-diode semiconductor laser coupling device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368066A (en) * | 2013-07-29 | 2013-10-23 | 武汉锐科光纤激光器技术有限责任公司 | Inclined plane type multi-tube semiconductor laser coupling device and method |
| CN104979749A (en) * | 2015-06-25 | 2015-10-14 | 鞍山伟光力激光科技有限公司 | High-power semiconductor fiber-coupled laser and coupling method thereof |
| CN112868150A (en) * | 2018-10-15 | 2021-05-28 | 松下知识产权经营株式会社 | Laser system with stepped slow axis collimator |
| CN114498287A (en) * | 2022-04-02 | 2022-05-13 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
-
2013
- 2013-07-29 CN CN201320456535.0U patent/CN203398519U/en not_active Withdrawn - After Issue
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103368066A (en) * | 2013-07-29 | 2013-10-23 | 武汉锐科光纤激光器技术有限责任公司 | Inclined plane type multi-tube semiconductor laser coupling device and method |
| CN103368066B (en) * | 2013-07-29 | 2015-11-18 | 武汉锐科光纤激光技术股份有限公司 | A kind of ramp type multitube semiconductor laser coupling device and method |
| CN104979749A (en) * | 2015-06-25 | 2015-10-14 | 鞍山伟光力激光科技有限公司 | High-power semiconductor fiber-coupled laser and coupling method thereof |
| CN104979749B (en) * | 2015-06-25 | 2017-11-28 | 鞍山伟光力激光科技有限公司 | A kind of high power semiconductor fiber coupled laser and its coupling process |
| CN112868150A (en) * | 2018-10-15 | 2021-05-28 | 松下知识产权经营株式会社 | Laser system with stepped slow axis collimator |
| CN114498287A (en) * | 2022-04-02 | 2022-05-13 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
| CN114498287B (en) * | 2022-04-02 | 2022-06-28 | 北京热刺激光技术有限责任公司 | Semiconductor optical fiber coupling device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140115 Effective date of abandoning: 20151118 |
|
| C25 | Abandonment of patent right or utility model to avoid double patenting |