CN106253048B - High-power semiconductor laser system for realizing uniform light spots - Google Patents
High-power semiconductor laser system for realizing uniform light spots Download PDFInfo
- Publication number
- CN106253048B CN106253048B CN201610789825.5A CN201610789825A CN106253048B CN 106253048 B CN106253048 B CN 106253048B CN 201610789825 A CN201610789825 A CN 201610789825A CN 106253048 B CN106253048 B CN 106253048B
- Authority
- CN
- China
- Prior art keywords
- flat
- semiconductor laser
- axis direction
- bars
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a novel high-power semiconductor laser system capable of realizing uniform light spots, which is not easily influenced by the change of a light source, and has the advantages of simple optical device, low cost, simple and convenient installation and adjustment and strong controllability. The scheme is that a first flat plate lens assembly and/or a second flat plate lens assembly are/is obliquely arranged in the light emitting direction of the semiconductor laser stacked array, and the thickness and the inclination angle of the flat plate lens assemblies are set so that: the light beam passing through the first flat lens assembly is displaced in the slow axis direction, so that the light beams of the related bars are staggered in the arrangement in the slow axis direction; the light beam after passing through the second flat lens assembly is displaced in the fast axis direction, and the light emitted from the whole related bars is more compact in the fast axis direction. The flat lens is obliquely arranged, and the parallel offset effect of the flat lens on the light beam after twice refraction is utilized, so that the light emitting of each bar light emitting point generates displacement, the integral effect of light spots is adjusted, and the aim of homogenizing the light source is fulfilled.
Description
Technical Field
The invention relates to the semiconductor laser technology, in particular to a high-power semiconductor laser system for realizing uniform light spots.
Background
Due to the structural characteristics of the semiconductor laser, the energy distribution of the fast and slow axes of the semiconductor laser is in Gaussian-like distribution. For a semiconductor laser stacked array packaged by a plurality of bars, due to the characteristic of filling factors, light sources are arranged in a light and dark alternating mode, and output light energy of the system at the focus is distributed in a light and dark alternating mode. Such high power semiconductor laser systems are not desirable for applications where energy uniformity is highly desirable. The current solutions to this problem are: aspheric method, microlens array method, diffraction element, etc., but these methods have disadvantages such as high cost of elements, low yield, sensitivity to input light source variation, etc., and thus have many limitations in practical application.
Disclosure of Invention
In order to overcome the defects of expensive elements, low yield, sensitivity to the change of an input light source and the like of the traditional high-power laser homogenization scheme, the invention provides a novel high-power semiconductor laser system capable of realizing uniform light spots.
The solution of the invention is as follows:
the first type of scheme:
the utility model provides a realize high power semiconductor laser system of even facula, includes semiconductor laser stack array, its characterized in that: the semiconductor laser stacked array is provided with a first flat plate lens assembly and/or a second flat plate lens assembly in the light emitting direction in an inclined mode, and the thickness and the inclination angle of the flat plate lens assemblies are set so that: the light beams passing through the first flat lens assembly are displaced in the slow axis direction, so that the light emitting of the whole related bars is staggered in the slow axis direction (after the light spot positions of some bars are relatively displaced, the positions in the slow axis direction correspond to non-light emitting areas among light emitting points in the slow axis direction of other bars); the light beams passing through the second flat lens assembly are displaced in the fast axis direction, so that the light emitted from the whole related bars is more compact in the fast axis direction (non-light-emitting areas among the related bars are filled or reduced). That is, this type of scheme realizes the adjustment of the displacement vectors (distance and forward and backward directions) of the bars by changing the thickness and inclination angle of the flat lens assembly.
Here, it is possible to arrange only the first plate lens assembly to be displaced in the slow axis direction, or to arrange only the second plate lens assembly to be displaced in the fast axis direction.
The second scheme is as follows:
the high-power semiconductor laser system comprises a semiconductor laser stacked array, wherein bars in the semiconductor laser stacked array are arranged in a staggered mode, so that the positions of light-emitting points of part of the bars correspond to gaps (non-light-emitting areas) among the light-emitting points on other bars in the stacked array stacking direction. Therefore, the integral light emission is homogenized by improving the bar layout structure of the semiconductor laser stacked array.
For the first type of scheme, the invention further performs the following important optimization.
1. Optimizing the structure and the arrangement mode of the first flat plate lens component:
1.1 the first flat lens component corresponds to part of bars of the semiconductor laser stacked array, and the light beams of the part of bars passing through the first flat lens component and the light emitted from other bars are arranged in the slow axis direction to form dislocation.
Here, the first plate lens assembly may employ a single piece corresponding to a number of bars in succession (which may generally correspond to the number of bars in the middle); or, the first plate lens assembly may also be composed of a plurality of plate lenses, and the plate lenses respectively correspond to the plurality of spaced bars one by one (the plate lenses may be of the same specification, or the thickness and the inclination angle of each plate lens may be set differently according to the light spot adjustment requirement, for example, the light spot defect position of the semiconductor laser stack array itself is subjected to the targeted beam offset adjustment).
Further, when a plurality of flat lenses are adopted to form the first flat lens assembly, every other bar can correspond to one flat lens for the whole semiconductor laser stacked array.
1.2 the first plate lens assembly (spatial position) corresponds to all bars of the semiconductor laser stack array, and the first plate lens assembly comprises a plurality of plate lenses with different specifications, so that light beams of all bars passing through the corresponding plate lenses are displaced in the slow axis direction, but displacement vectors are different.
Considering factors such as processing and installation comprehensively, the flat lenses with different specifications mean that the inclination directions of part of the flat lenses are opposite (namely, one part of the flat lenses is inclined in a forward direction, and the other part of the flat lenses is inclined in a reverse direction), and the thicknesses of the flat lenses can be the same or different, so that one part of light beams passing through the first flat lens assembly is displaced in the forward direction in the slow axis direction, and the other part of light beams is displaced in the reverse direction in the slow axis direction.
2. And (3) optimizing the structure and the setting mode of the second flat plate lens component:
the second flat plate lens component corresponds to all bars or part bars of the semiconductor laser stacked array; the second flat lens component is composed of a plurality of flat lenses (which can be of the same specification or different specifications), and each flat lens corresponds to one bar.
And each flat lens of the second flat lens component sequentially changes the inclination angle and/or the thickness in an increasing or decreasing manner, so that the light beam passing through the second flat lens component is shifted to one end in the fast axis direction. Or, the inclination angle and/or the thickness of each flat lens of the second flat lens component are sequentially and progressively changed from two ends to the middle, so that the light beam passing through the second flat lens component is deviated from two ends to the middle.
The invention has the following technical effects:
1. the invention is not easily influenced by the change of the light source, and the optical device is simple, low in cost, simple and convenient to install and adjust and strong in controllability.
2. The flat lens is obliquely arranged, so that the parallel offset effect of the flat lens on light beams after twice refraction is utilized, the light emitted by the semiconductor laser stacked array (of each bar light-emitting point) is displaced, the integral effect of light spots is adjusted, and the aim of homogenizing the light source is fulfilled.
3. The semiconductor laser stack array (or light output thereof) is staggered by taking bars as units, the requirement on adjustment precision is not high, and the integral uniformity of a light source is good.
4. The semiconductor laser stacked array (of each bar luminous point) displaces the light emission in the fast axis direction, eliminates the gap of the luminous points in the thickness direction of the bars, makes the whole light emission more compact, realizes the homogenization of the light source to a certain extent, and improves the energy density of light spots.
Drawings
Fig. 1 is a schematic diagram of arrangement of light emitting points of a conventional semiconductor laser stack, in which each row corresponds to a bar.
Fig. 2 shows the bars of the present invention as a unit for dislocation arrangement.
FIG. 3 is a schematic diagram of the present invention using a plate lens to displace a light beam.
FIG. 4 is a schematic diagram of the present invention using a flat lens to shift the light of a plurality of bars in the middle in the slow axis direction.
FIG. 5 is a diagram illustrating displacement of half of the spaced bars in the slow axis direction by a plate lens according to the present invention.
Fig. 6 is a schematic diagram of the present invention using plate lenses (a plurality of plate lenses with sequentially increasing thickness) to shift part of the emergent light in the fast axis direction.
Fig. 7 is a schematic diagram of the present invention simultaneously setting the first plate lens group and the second plate lens group to respectively displace a part of the emergent light in the slow axis direction and the fast axis direction.
The reference numbers illustrate:
1-stacking semiconductor lasers; 2-plate lens (group); 21-a first plate lens group; 22-second plate lens group.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The first embodiment is as follows:
as shown in fig. 2, the bar layout structure of the stacked array of semiconductor lasers is arranged in a staggered manner, so that the light emitting points of some bars are positioned in the stacking direction of the stacked array corresponding to the gaps between the light emitting points of other bars, and the light emitted from the whole array is homogenized.
Example two:
as shown in fig. 4, the overall displacement of the light emitting lattice of the bar in a certain portion of the stacked array can be realized. The flat lens is arranged in the light emitting direction of the semiconductor laser stacked array and only corresponds to the bars needing to be subjected to light emitting point displacement in the fast axis direction, and a certain included angle is formed between the flat lens and the laser optical axis in a view of the slow axis direction. After passing through the flat lens, the laser emitted by the bars is displaced relative to the original light spot position (in fig. 4, the light beams of 3-6 bars which are upside down and pass through the first flat lens component are staggered with the light emitted by the 1 st, 2 nd, 7 th and 8 th bars in the slow axis direction).
The plate lens in this embodiment is a one-piece plate lens; an array of plate lenses may also be constructed, with each plate lens corresponding to a bar.
Example three:
as shown in fig. 5, the first plate lens group is disposed in the light outgoing direction of the semiconductor laser stack, the number of plate lenses of the first plate lens group is half of the number of bars, and every other bar corresponds to one plate lens; the flat lenses are sequentially arranged along the fast axis direction of the stacked array (the view in the fast axis direction is parallel to the optical axis, and the view in the slow axis direction forms a certain included angle with the optical axis of the laser), and the laser emitted by the corresponding bars passes through the flat lenses and then is displaced in the slow axis direction relative to the original light-emitting points, so that the light-emitting points of the bars after final displacement and the light-emitting points of the bars which are not displaced are arranged at intervals in the fast axis direction.
Example four:
as shown in fig. 6, the second flat lens group is disposed in the light-emitting direction of the semiconductor laser stack array, the second flat lens group includes a plurality of flat lenses, the flat lenses are sequentially arranged along the fast axis direction of the stack array, the flat lenses are disposed at a certain included angle with the optical axis of the fast axis direction, the thickness of the flat lenses is sequentially increased from top to bottom, the laser beam of each bar passes through the flat lenses and then generates corresponding displacement (amount) in the fast axis direction, and finally, the light spot of the whole light-emitting is more compact and closer to the upper end.
Example five:
as shown in fig. 7, the first plate lens group and the second plate lens group are simultaneously disposed in the light emitting direction of the stacked array of semiconductor lasers, and the displacement in the fast axis direction and the displacement in the slow axis direction are respectively realized, so as to realize the optimal light spot quality.
Claims (8)
1. The utility model provides a realize high power semiconductor laser system of even facula, includes semiconductor laser stack array, its characterized in that: the semiconductor laser stacked array is provided with a first flat plate lens assembly and a second flat plate lens assembly in an inclined mode in the light emitting direction, and the thickness and the inclination angle of the flat plate lens assemblies enable: the light beam passing through the first flat lens assembly is displaced in the slow axis direction, so that the light beams of the related bars are staggered in the arrangement in the slow axis direction; the light beam after passing through the second flat lens assembly is displaced in the fast axis direction, and the light emitted from the whole related bars is more compact in the fast axis direction.
2. The high power semiconductor laser system for achieving uniform light spot according to claim 1, wherein: the first flat lens component corresponds to a part of bars of the semiconductor laser stacked array, and light beams of the part of bars passing through the first flat lens component and light emitted by other bars are arranged in the slow axis direction to form dislocation.
3. The high power semiconductor laser system for achieving uniform light spot according to claim 2, wherein: the first plate lens assembly is a single piece corresponding to a plurality of continuous bars; or the first flat lens component consists of a plurality of flat lenses which respectively correspond to a plurality of continuous or spaced bars one by one.
4. The high power semiconductor laser system for achieving uniform light spot according to claim 3, wherein: the first flat lens component is composed of a plurality of flat lenses, and for the whole semiconductor laser stacked array, every other bar corresponds to one flat lens.
5. The high power semiconductor laser system for achieving uniform light spot according to claim 1, wherein: the first flat plate lens assembly corresponds to all bars of the semiconductor laser stacked array and comprises a plurality of flat plate lenses with different specifications, so that light beams of all the bars passing through the corresponding flat plate lenses are displaced in the slow axis direction, but displacement vectors are different.
6. The high power semiconductor laser system for achieving uniform light spot according to claim 5, wherein: the plurality of flat lenses with different specifications mean that the inclination directions of part of the flat lenses are opposite, so that one part of light beams passing through the first flat lens component is displaced in the positive direction in the slow axis direction, and the other part of light beams is displaced in the reverse direction in the slow axis direction.
7. The high power semiconductor laser system for realizing uniform light spot according to any one of claims 1 to 6, wherein: the second flat plate lens component corresponds to all bars or part of bars of the semiconductor laser stacked array; the second flat lens component is composed of a plurality of flat lenses, and each flat lens corresponds to one bar.
8. The high power semiconductor laser system for achieving uniform light spot according to claim 7, wherein: and each flat lens of the second flat lens component sequentially changes the inclination angle and/or the thickness in an increasing or decreasing manner, so that the light beam passing through the second flat lens component is shifted to one end in the fast axis direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610789825.5A CN106253048B (en) | 2016-08-30 | 2016-08-30 | High-power semiconductor laser system for realizing uniform light spots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610789825.5A CN106253048B (en) | 2016-08-30 | 2016-08-30 | High-power semiconductor laser system for realizing uniform light spots |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106253048A CN106253048A (en) | 2016-12-21 |
| CN106253048B true CN106253048B (en) | 2022-03-22 |
Family
ID=58081027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610789825.5A Active CN106253048B (en) | 2016-08-30 | 2016-08-30 | High-power semiconductor laser system for realizing uniform light spots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106253048B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022016380A1 (en) * | 2020-07-21 | 2022-01-27 | 深圳市速腾聚创科技有限公司 | Laser radar and autonomous driving device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458395A (en) * | 2007-12-12 | 2009-06-17 | 中国科学院半导体研究所 | Light beam shaper by refractometry for two-dimension laminate light source |
| CN102129127A (en) * | 2011-01-18 | 2011-07-20 | 山西飞虹激光科技有限公司 | Semiconductor laser array fast and slow axis beam rearrangement device and manufacturing method |
| CN102891436A (en) * | 2011-07-21 | 2013-01-23 | 奥兰若技术有限公司 | Optical system and method for improving same |
| CN103944066A (en) * | 2014-05-09 | 2014-07-23 | 西安炬光科技有限公司 | High-power semiconductor laser beam combining method |
| CN105659451A (en) * | 2013-10-18 | 2016-06-08 | 法国圣戈班玻璃厂 | Modular laser apparatus |
| CN206059898U (en) * | 2016-08-30 | 2017-03-29 | 西安炬光科技股份有限公司 | A kind of high-power semiconductor laser system for realizing uniform light spots |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100483243C (en) * | 2005-03-29 | 2009-04-29 | 中国科学院光电技术研究所 | Method for realizing bar array semiconductor laser shaping by means of reflecting prism stack |
| CN100460977C (en) * | 2007-01-05 | 2009-02-11 | 北京工业大学 | Device for implementing shaping high power caser diode pile light beam |
| CN101144909A (en) * | 2007-10-25 | 2008-03-19 | 中国科学院长春光学精密机械与物理研究所 | Surface array semiconductor laser light beam shaping device |
-
2016
- 2016-08-30 CN CN201610789825.5A patent/CN106253048B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101458395A (en) * | 2007-12-12 | 2009-06-17 | 中国科学院半导体研究所 | Light beam shaper by refractometry for two-dimension laminate light source |
| CN102129127A (en) * | 2011-01-18 | 2011-07-20 | 山西飞虹激光科技有限公司 | Semiconductor laser array fast and slow axis beam rearrangement device and manufacturing method |
| CN102891436A (en) * | 2011-07-21 | 2013-01-23 | 奥兰若技术有限公司 | Optical system and method for improving same |
| CN105659451A (en) * | 2013-10-18 | 2016-06-08 | 法国圣戈班玻璃厂 | Modular laser apparatus |
| CN103944066A (en) * | 2014-05-09 | 2014-07-23 | 西安炬光科技有限公司 | High-power semiconductor laser beam combining method |
| CN206059898U (en) * | 2016-08-30 | 2017-03-29 | 西安炬光科技股份有限公司 | A kind of high-power semiconductor laser system for realizing uniform light spots |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106253048A (en) | 2016-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11421846B2 (en) | High beam headlight | |
| US7110183B2 (en) | Device for the optical beam transformation of a linear arrangement of several light sources | |
| US6888679B2 (en) | Laser diode bar integrator/reimager | |
| US10830409B2 (en) | Light source module and projection device | |
| US10310280B2 (en) | Offset laser array with beam combining optical element | |
| US20070217740A1 (en) | Method and apparatus for optimizing the target intensity distribution transmitted from a fiber coupled array | |
| US9917423B2 (en) | Laser beam combination system | |
| US7260131B2 (en) | Symmetrization device and laser diode system provided with the same | |
| US10133079B2 (en) | Laser device having semiconductor laser array stacks | |
| RU2539680C2 (en) | Apparatus for generating laser radiation and laser having said apparatus | |
| CN104956179A (en) | Optical system generating a structured light field from an array of light sources by means of a refracting of reflecting light structuring element | |
| CN105759411A (en) | Optical fiber coupled laser, optical fiber coupled laser system and optimization method thereof | |
| WO2018058741A1 (en) | Multipath light beam processing optical system and processing method therefor, and multipath laser detector | |
| JP7199810B2 (en) | Devices for projecting pixelated light beams, headlamps equipped with such devices | |
| US8395844B2 (en) | Apparatus for homogenizing light and laser apparatus for producing a linear intensity distribution in a work plane | |
| KR20160145910A (en) | Device for forming line beam | |
| US20150177523A1 (en) | Reflector unit, apparatus and method of light beam shaping | |
| KR20110128175A (en) | Device for homogenizing laser radiation | |
| KR20070057074A (en) | Device for homogenizing light and arrangement for illuminating or focussing with said device | |
| CN106253048B (en) | High-power semiconductor laser system for realizing uniform light spots | |
| US9444226B2 (en) | Diode laser | |
| WO2020198261A1 (en) | Spatial multiplexing of lens arrays with surface-emitting lasers for multi-zone illumination | |
| EP3748287A1 (en) | Vcsel based pattern projector | |
| JP5241785B2 (en) | Light beam rearrangement optical system, optical element and light source device | |
| US20230069985A1 (en) | Variable-pulse-width flat-top laser device and operating method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |