CN106253048A - A kind of high-power semiconductor laser system realizing uniform light spots - Google Patents
A kind of high-power semiconductor laser system realizing uniform light spots Download PDFInfo
- Publication number
- CN106253048A CN106253048A CN201610789825.5A CN201610789825A CN106253048A CN 106253048 A CN106253048 A CN 106253048A CN 201610789825 A CN201610789825 A CN 201610789825A CN 106253048 A CN106253048 A CN 106253048A
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- China
- Prior art keywords
- flat
- bar
- plate lens
- semiconductor laser
- lens assembly
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
Abstract
The present invention proposes the high-power semiconductor laser system of a kind of new realized uniform light spots, is not easily susceptible to the impact of light source variation, and the simple low cost of optics is installed, regulated simplicity, and controllability is strong.The program is to be tiltedly installed with the first flat-plate lens assembly and/or the second flat-plate lens assembly on the light direction of semiconductor laser stacks, the thickness of flat-plate lens assembly and the setting at inclination angle make: the light beam after the first flat-plate lens assembly is subjected to displacement on slow-axis direction, and the light arrangement on slow-axis direction that goes out meeting relevant bar bar overall exists dislocation；Light beam after the second flat-plate lens assembly is subjected to displacement on quick shaft direction, and it is compacter on quick shaft direction that what satisfied relevant bar bar was overall goes out light.By being obliquely installed flat-plate lens, utilize the parallel offset effect to light beam after twice refraction of flat-plate lens, make the light that of each bar bar luminous point produce displacement, regulate hot spot whole structure, thus reach to homogenize the purpose of light source.
Description
Technical field
The present invention relates to semiconductor laser technology, particularly relate to a kind of high-power semiconductor laser realizing uniform light spots
System.
Background technology
Due to semiconductor laser structure characteristic, causing semiconductor laser fast and slow axis Energy distribution is class Gauss distribution.
For the semiconductor laser stacks encapsulated by several bar bars, owing to there is the characteristic of fill factor, curve factor, light source is the brightest
Dark arrangement mode alternately, system at the light energy output of focal point the most just in the bright distribution secretly replaced.For energy uniformity
Require that higher occasion, such high-power semiconductor laser system do not reach requirement.Solve doing of this problem at present
Method has: aspheric surface method, microlens array method, diffraction components and parts etc., but these methods are disadvantageous in that element costliness, yield rate
Lowly, to the input shortcomings such as light source variation is more sensitive, therefore actual application is much limited.
Summary of the invention
Element in order to overcome conventional high power laser homogenizing scheme to exist is expensive, yield rate is low, to input light source change
Moving the defects such as more sensitive, the present invention proposes the high-power semiconductor laser system of a kind of new realized uniform light spots.
The solution of the present invention is as follows:
First kind scheme:
A kind of high-power semiconductor laser system realizing uniform light spots, including semiconductor laser stacks, its feature exists
In: on the light direction of described semiconductor laser stacks, it is tiltedly installed with the first flat-plate lens assembly and/or the second flat board
Lens subassembly, the thickness of flat-plate lens assembly and the setting at inclination angle make: the light beam after the first flat-plate lens assembly is slowly
Being subjected to displacement on direction of principal axis, the light arrangement existence on slow-axis direction that goes out meeting relevant bar bar overall misplaces (some bar bar
After facula position generation relative displacement, between the position on slow-axis direction is corresponding to luminous point on other bar bar slow-axis directions
Non-luminous region)；Light beam after the second flat-plate lens assembly is subjected to displacement on quick shaft direction, meets relevant bar bar overall
Go out light compacter on quick shaft direction (fill up or reduce the non-luminous region between relevant bar bar).That is, such scheme is passed through
Change the thickness of flat-plate lens assembly and inclination angle realizes the regulation to bar bar pattern displacement vector (distance and forward and reverse).
Here, the first flat-plate lens assembly is only set and makes to be subjected to displacement on slow-axis direction, or the second flat-plate lens is only set
Assembly makes to be subjected to displacement on quick shaft direction, is all feasible.
Equations of The Second Kind scheme:
This high-power semiconductor laser system, including semiconductor laser stacks, the bar bar in semiconductor laser stacks
There is Heterogeneous Permutation so that the luminous point position of part bar bar corresponds to each luminous point on other bar bars on folded battle array stacking direction
Between gap (non-luminous region).So, by improving the bar bar layout structure of semiconductor laser stacks self so that whole
Body goes out light and is homogenized.
For above-mentioned first kind scheme, the present invention has made following important optimization the most further.
1, to the first flat-plate lens modular construction, the optimization of set-up mode:
1.1 first flat-plate lens assemblies (locus) are corresponding to the part bar bar of semiconductor laser stacks, described
Part bar bar light beam after the first flat-plate lens assembly forms mistake with the light arrangement on slow-axis direction that goes out of other bar bars
Position.
Here, the first flat-plate lens assembly can use integral piece, and this integral piece is (logical corresponding to several bar bars of continuous print
Often may correspond to several bar bars of centre)；Or, the first flat-plate lens assembly can also be made up of multiple flat-plate lens, point
In multiple bar bars separately, (these flat-plate lens can be same specification to other one_to_one corresponding；Need can also be regulated according to hot spot
Ask the thickness to each flat-plate lens and inclination angle to make different settings, the such as hot spot for semiconductor laser stacks self to lack
Beam deviation regulation targetedly is made in sunken position).
Further, when using multiple flat-plate lens to form the first flat-plate lens assembly, for whole semiconductor laser
Battle array folded by device, can make every the corresponding flat-plate lens of a bar bar.
1.2 first flat-plate lens assemblies (locus) are corresponding to whole bar bars of semiconductor laser stacks, described
First flat-plate lens assembly includes multiple flat-plate lens that specification is different so that all bar bar is after corresponding flat-plate lens
Light beam is all subjected to displacement on slow-axis direction, but displacement vector exists difference.
Consider the factors such as processing and installation, multiple flat-plate lens that above-mentioned specification is different, refer to part flat-plate lens
Incline direction contrary (i.e. in these flat-plate lens, a part is reversed dip for forward inclination, another part), thickness is permissible
Identical can also be different so that on slow-axis direction, there is forward position in a part of light beam after the first flat-plate lens assembly
Moving, there is reverse displacement in another part light beam on slow-axis direction.
2, to the second flat-plate lens modular construction, the optimization of set-up mode:
Second flat-plate lens assembly corresponds to whole bar bars or the part bar bar of semiconductor laser stacks；Second flat board
Lens subassembly is by multiple flat-plate lens (can be identical with specification, it is also possible to specification is different) composition, corresponding one of each flat-plate lens
Bar bar.
Each flat-plate lens increasing or decreasing successively of the second flat-plate lens assembly changes inclination angle and/or thickness, make through
Light beam after second flat-plate lens assembly offsets to certain one end of quick shaft direction.Or, each of the second flat-plate lens assembly is put down
Plate lens, from successively decrease successively to centre from two ends respectively change inclination angle and/or thickness, make after the second flat-plate lens assembly
Light beam offsets from two ends to centre.
The present invention has following technical effect that
1, the present invention is not easily susceptible to the impact of light source variation, the simple low cost of optics, installs, regulates simplicity, controlled
Property is strong.
2, by being obliquely installed flat-plate lens, utilize the parallel offset effect to light beam after twice refraction of flat-plate lens, make
Semiconductor laser stacks (each bar bar luminous point) goes out light and produces displacement, regulates hot spot whole structure, thus reaches even
Change the purpose of light source.
3, semiconductor laser stacks (or it goes out light) carries out dislocation arrangement with bar bar for unit, and degree of regulation requires not
Height, light source entirety uniformity is preferable.
4, semiconductor laser stacks (each bar bar luminous point) goes out light displacement on quick shaft direction, eliminates Yin Ba
Luminous point gap on bar thickness direction so that it is the compactest that entirety goes out light, achieves homogenizing of light source, simultaneously to a certain extent
Also improve light spot energy density.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the luminous point arrangement of conventional semiconductor laser stacks, the corresponding bar of every a line in figure
Bar.
Fig. 2 be the present invention arrange with bar bar for unit carry out dislocation arrangement.
Fig. 3 is the schematic diagram that the present invention utilizes that flat-plate lens makes light beam be subjected to displacement.
Fig. 4 is that continuous multiple bar bars that the present invention utilizes flat-plate lens to make to be positioned at centre go out light position occurs on slow-axis direction
The schematic diagram moved.
Fig. 5 is that the present invention utilizes flat-plate lens to make the bar bar of half quantity separately go out light position occurs on slow-axis direction
The schematic diagram moved.
Fig. 6 is that the present invention utilizes flat-plate lens (multiple flat-plate lens that thickness is incremented by successively) to make part bar bar go out light soon
The schematic diagram being subjected to displacement on direction of principal axis.
Fig. 7 is that the present invention arranges the first flat-plate lens group simultaneously and the second flat-plate lens group makes part bar bar go out light to exist respectively
The schematic diagram being subjected to displacement on slow-axis direction, quick shaft direction.
Drawing reference numeral illustrates:
1 semiconductor laser stacks；2 flat-plate lens (group)；21 first flat-plate lens groups；22 second flat-plate lens
Group.
Detailed description of the invention
Below in conjunction with accompanying drawing, the invention will be further described.
Embodiment one:
Such as Fig. 2, the bar bar layout structure of semiconductor laser stacks self is set to the form of Heterogeneous Permutation so that portion
The luminous point position of decibar bar corresponds to the gap on other bar bars between each luminous point on folded battle array stacking direction so that overall
Go out light to be homogenized.
Embodiment two:
Such as Fig. 4, it is possible to achieve the Dot array of the bar bar of certain part in folded battle array is realized global displacement.Flat-plate lens sets
It is placed on the light direction of semiconductor laser stacks, and on quick shaft direction, corresponds only to do the bar bar of luminous point displacement,
Flat-plate lens, in the view of slow-axis direction, is certain angle with laser beam axis.Bar bar sends laser instrument after flat-plate lens,
(the 3rd～6 bar article fallen down from above in Fig. 4 is after the first flat-plate lens assembly to there occurs displacement relative to former facula position
Light beam and the light arrangement on slow-axis direction that goes out of the 1st, 2,7,8 bars article form dislocation).
Flat-plate lens in the present embodiment is the flat-plate lens of a monoblock；Flat-plate lens array can also be set up, wherein
Each flat-plate lens corresponding to a bar bar.
Embodiment three:
Such as Fig. 5, the first flat-plate lens group is arranged on the light direction of semiconductor laser stacks, the first flat-plate lens group
The half that flat-plate lens number is bar bar number, and every the corresponding flat-plate lens of bar bar；These flat-plate lens edges
The quick shaft direction of folded battle array is arranged in order (parallel with optical axis in the view of quick shaft direction, with laser beam axis in the view of slow-axis direction
Angle in certain), the laser that corresponding bar bar sends is by, after flat-plate lens, there occurs slow-axis direction relative to primary luminous point
On displacement so that the bar bar luminous point after final mean annual increment movement is spaced on quick shaft direction with the bar bar luminous point of non-displacement.
Embodiment four:
Such as Fig. 6, the second flat-plate lens group is arranged on the light direction of semiconductor laser stacks, the second flat-plate lens group
Including multiple flat-plate lens, the quick shaft direction along folded battle array is arranged in order, and flat-plate lens arranges the optical axis with quick shaft direction in necessarily
Angle, the thickness of flat-plate lens is incremented by the most successively, the laser beam of each bar bar by after flat-plate lens in fast axle side
Upwards producing corresponding displacement (measuring), the hot spot that final entirety goes out light is compacter near upper end.
Embodiment five:
Such as Fig. 7, the light direction of semiconductor laser stacks arranges the first flat-plate lens group and the second flat board simultaneously
Battery of lens, corresponds respectively to realize the displacement of the displacement of quick shaft direction and slow-axis direction, to realize optimum optical quality.
Claims (9)
1. realize a high-power semiconductor laser system for uniform light spots, including semiconductor laser stacks, it is characterised in that:
The light direction of described semiconductor laser stacks is tiltedly installed with the first flat-plate lens assembly and/or the second flat-plate lens
Assembly, the thickness of flat-plate lens assembly and the setting at inclination angle make: the light beam after the first flat-plate lens assembly is in slow axis side
Upwards being subjected to displacement, there is dislocation in the light arrangement on slow-axis direction that goes out meeting relevant bar bar overall；Saturating through the second flat board
Light beam after mirror assembly is subjected to displacement on quick shaft direction, and the light that goes out meeting relevant bar bar overall more steps up on quick shaft direction
Gather.
The high-power semiconductor laser system realizing uniform light spots the most according to claim 1, it is characterised in that: described
One group of flat-plate lens assembly corresponds to the part bar bar of semiconductor laser stacks, and described part bar bar is through the first flat-plate lens
Light beam after assembly forms dislocation with the light arrangement on slow-axis direction that goes out of other bar bars.
The high-power semiconductor laser system realizing uniform light spots the most according to claim 2, it is characterised in that: described
One flat-plate lens assembly is integrated part, and this integral piece corresponds to several bar bars of continuous print；Or, described first flat-plate lens group
Part is made up of multiple flat-plate lens, and one_to_one corresponding is in multiple bar bars continuously or separately respectively.
The high-power semiconductor laser system realizing uniform light spots the most according to claim 3, it is characterised in that: described
One flat-plate lens assembly is made up of multiple flat-plate lens, for whole semiconductor laser stacks, every a bar bar correspondence one
Individual flat-plate lens.
The high-power semiconductor laser system realizing uniform light spots the most according to claim 1, it is characterised in that: described
One flat-plate lens assembly is corresponding to whole bar bars of semiconductor laser stacks, and described first flat-plate lens assembly includes that specification is not
Same multiple flat-plate lens so that all bar bar light beams after corresponding flat-plate lens all occur position on slow-axis direction
Move, but displacement vector exists difference.
The high-power semiconductor laser system realizing uniform light spots the most according to claim 5, it is characterised in that: described rule
Multiple flat-plate lens that lattice are different, refer to that the incline direction of part flat-plate lens is contrary so that through the first flat-plate lens assembly
After a part of light beam on slow-axis direction, there is positive-displacement, on slow-axis direction, there is reverse displacement in another part light beam.
7., according to the arbitrary described high-power semiconductor laser system realizing uniform light spots of claim 1 to 6, its feature exists
In: described second flat-plate lens assembly corresponds to whole bar bars or the part bar bar of semiconductor laser stacks；Second flat board
Lens subassembly is made up of multiple flat-plate lens, the corresponding bar bar of each flat-plate lens.
The high-power semiconductor laser system realizing uniform light spots the most according to claim 7, it is characterised in that: second is flat
Each flat-plate lens increasing or decreasing successively of plate lens subassembly changes inclination angle and/or thickness, makes through the second flat-plate lens group
Light beam after part offsets to certain one end of quick shaft direction.
9. realize a high-power semiconductor laser system for uniform light spots, including semiconductor laser stacks, it is characterised in that:
There is Heterogeneous Permutation in the bar bar in described semiconductor laser stacks so that the luminous point position of part bar bar is in folded battle array stacking side
Upwards corresponding to the non-luminous region between each luminous point on other bar bars.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610789825.5A CN106253048B (en) | 2016-08-30 | 2016-08-30 | High-power semiconductor laser system for realizing uniform light spots |
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| CN201610789825.5A CN106253048B (en) | 2016-08-30 | 2016-08-30 | High-power semiconductor laser system for realizing uniform light spots |
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| CN106253048B CN106253048B (en) | 2022-03-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112997096A (en) * | 2020-07-21 | 2021-06-18 | 深圳市速腾聚创科技有限公司 | Laser radar and autopilot device |
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2016
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| CN1664688A (en) * | 2005-03-29 | 2005-09-07 | 中国科学院光电技术研究所 | Method for realizing bar array semiconductor laser shaping by means of reflecting prism stack |
| CN101000444A (en) * | 2007-01-05 | 2007-07-18 | 北京工业大学 | Device for implementing shaping high power caser diode pile light beam |
| CN101144909A (en) * | 2007-10-25 | 2008-03-19 | 中国科学院长春光学精密机械与物理研究所 | Surface array semiconductor laser light beam shaping device |
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| CN105659451A (en) * | 2013-10-18 | 2016-06-08 | 法国圣戈班玻璃厂 | Modular laser apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112997096A (en) * | 2020-07-21 | 2021-06-18 | 深圳市速腾聚创科技有限公司 | Laser radar and autopilot device |
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| CN106253048B (en) | 2022-03-22 |
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