CN111146682B - Optical fiber coupling semiconductor laser module and semiconductor laser - Google Patents

Optical fiber coupling semiconductor laser module and semiconductor laser Download PDF

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Publication number
CN111146682B
CN111146682B CN201911229332.6A CN201911229332A CN111146682B CN 111146682 B CN111146682 B CN 111146682B CN 201911229332 A CN201911229332 A CN 201911229332A CN 111146682 B CN111146682 B CN 111146682B
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semiconductor laser
fiber
optical fiber
ribbon
core layer
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CN111146682A (en
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徐剑秋
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SHANGHAI INSTITUTE OF TRANSMISSION LINE (CETC NO.23 INSTITUTE)
TXSTAR LASER TECHNOLOGY (SHANGHAI) Co.,Ltd.
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Txstar Laser Technology Shanghai Co ltd
Shanghai Institute Of Transmission Line (cetc No23 Institute)
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Abstract

The invention relates to the technical field of laser, and provides an optical fiber coupling semiconductor laser module and a semiconductor laser, wherein the semiconductor laser module comprises a plurality of optical path units, each optical path unit comprises a semiconductor laser chip, a fast axis collimating lens, a slow axis collimating lens and a heat sink base, a space grating type reflecting mirror corresponding to the optical path unit is arranged on the optical path of light emitted by each optical path unit, the space grating type reflecting mirrors are positioned in a fiber core layer of a multilayer ribbon optical fiber, the space grating type reflecting mirrors engraved in different fiber core layers are arranged along the length direction of the multilayer ribbon optical fiber, the positions of the space grating type reflecting mirrors in the length direction of the multilayer ribbon optical fiber are not overlapped, a plurality of laser beams are independently transmitted along the length direction of the multilayer ribbon optical fiber and are integrated with an output optical fiber in a space coupling or fused tapering mode, the device reduces a large number of spatial micro-optical elements, has compact structure, good stability and high efficiency, and can greatly reduce the cost.

Description

Optical fiber coupling semiconductor laser module and semiconductor laser
Technical Field
The invention relates to the technical field of laser, and particularly provides an optical fiber coupling semiconductor laser module and a semiconductor laser.
Background
In order to obtain higher output power, the fiber-coupled output semiconductor laser module generally comprises a plurality of independent single-chip semiconductor lasers, and the independent single-chip semiconductor lasers are collimated by the fast axis and the slow axis of the micro-optical element, deflected and rearranged in directions, and coupled into the output fiber by the space lens group. For example, in patent CN 201510032646.2, U.S. Pat. No. 8,483,531B 1, documents "x.h.ma, et al.beam profiling and fiber coupling of high power laser diode arrays, prox.spie 5644,545 (2005)", etc., the large number of micro-optical elements used in these technical solutions makes the semiconductor laser module complicated in structure and poor in stability, and since each micro-optical element necessarily brings a certain loss, the coupling efficiency of the whole semiconductor laser module is difficult to improve.
The other type of technical scheme directly utilizes a semiconductor laser array for shaping, and then the shaped semiconductor laser array is coupled into an output optical fiber through a space lens group, so that an expensive space micro-optical shaping element is still not avoided, and the beam bending (smile) and parallelism (alignment) errors of the semiconductor laser array become the technical bottleneck of the optical fiber coupling output semiconductor laser module. Such as the new patent CN 201220367051.4, U.S. Pat. No. 3, 2005/0264893, the documents "B.Faircloth, High-brightness High-power fiber coupled diode laser system for material processing and laser pumping, and the documents" SPIE 4973,34-41(2003) ", etc.
Regardless of which type of technical route is used, the spatial micro-optical shaping element becomes a critical device, which determines the complexity, stability and cost of the semiconductor laser module.
Disclosure of Invention
The invention aims to provide an optical fiber coupling semiconductor laser module and a semiconductor laser, wherein a plurality of independent light beams of a semiconductor laser chip are integrated by adopting a plurality of layers of ribbon optical fibers and are fused with an output optical fiber into a whole in a space coupling or fused tapering mode, wherein the plurality of layers of ribbon optical fibers are used as main laser transmission lines to replace a plurality of micro optical elements used in the prior art, a large number of space micro optical elements are reduced, the structure is compact, the stability is good, the efficiency is high, and the multilayer ribbon optical fibers can be manufactured in a large scale by using the existing optical fiber drawing technology, so that the cost is greatly reduced.
In order to achieve the purpose, the invention adopts the following technical scheme:
the utility model provides an optical fiber coupling semiconductor laser module, semiconductor laser module contains a plurality of light path unit, and every light path unit includes a semiconductor laser chip 1, a fast axle collimating lens 2, a slow axle collimating lens 4 and a heat sink base 11, and its characterized in that, the light path of the light that every light path unit sent all sets up a space grating type speculum 33 that forms by micropore 34 that corresponds with it, 33 bits of space grating type speculumIn a core layer 31 of a ribbon fiber 3, the ribbon fiber 3 is a multi-layer ribbon fiber, the ribbon fiber 3 includes at least one core layer 31 and cladding layers 32 located on two sides of the core layer, the core layer 31 and the cladding layers 32 located on two sides of the core layer are stacked in parallel and alternately, the cladding layers 32 are disposed on two sides of each core layer 31, the outermost layer on two sides of the multi-layer ribbon fiber 3 is the cladding layer 32, and the refractive index of the core layer 31 is n1The refractive index of the cladding 32 is n2The refractive index n of the core layer1Greater than the refractive index n of the cladding2The semiconductor laser chips 1 are arranged on the respective heat sink bases 11, the fast axis collimating lens 2 is fixed at the light output end of the semiconductor laser chip 1, and laser beams reflected by all the fiber core layers of the multilayer ribbon fiber are subjected to slow axis collimation through the slow axis collimating lens 4.
Further, the plurality of semiconductor laser chips 1 are arranged at equal or non-equal intervals along the length direction of the multilayer ribbon-shaped optical fiber 3, and the positions of the semiconductor laser chips 1 in the length direction of the multilayer ribbon-shaped optical fiber 3 do not coincide with each other, and the space grating type reflectors 33 engraved in the different core layers 31 are arranged along the length direction of the multilayer ribbon-shaped optical fiber 3 and do not coincide with each other in the length direction of the multilayer ribbon-shaped optical fiber 3.
Preferably, the spatial grating type reflector 33 is a total reflection spatial grating type reflector.
In order to achieve the purpose of the present invention, the present invention further provides an optical fiber coupled semiconductor laser, which is characterized by comprising a focusing lens 5 and a semiconductor laser module capable of outputting a laser beam, wherein the semiconductor laser module comprises a plurality of optical path units, each optical path unit comprises a semiconductor laser chip 1, a fast axis collimating lens 2, a slow axis collimating lens 4 and a heat sink base 11, and is characterized in that a spatial grating type reflector 33 formed by micro-holes 34 is arranged on an optical path of light emitted by each optical path unit, the spatial grating type reflector 33 is arranged in a core layer 31 of a ribbon fiber 3, and the spatial grating type reflector 33 is arranged in the core layer 31 of the ribbon fiber 3The ribbon fiber 3 is a multi-layer ribbon fiber, the ribbon fiber 3 includes at least one core layer 31 and cladding layers 32 on two sides of the core layer, the core layer 31 and the cladding layers 32 on two sides of the core layer are stacked in parallel and alternately, the cladding layers 32 are disposed on two sides of each core layer 31, the outermost part on two sides of the multi-layer ribbon fiber 3 is the cladding layer 32, and the refractive index of the core layer 31 is n1The refractive index of the cladding 32 is n2The refractive index n of the core layer1Greater than the refractive index n of the cladding2The semiconductor laser chips 1 are arranged on the heat sink bases 11, the fast axis collimating lens 2 is fixed at the light output end of the semiconductor laser chips 1, laser beams reflected by all fiber core layers of the multilayer ribbon fiber pass through the slow axis collimating lens 4 to be subjected to slow axis collimation, and the focusing lens 5 is used for coupling a plurality of laser beams finally output by the semiconductor laser module into one beam to form convergent light.
Further, the optical fiber coupling semiconductor laser further comprises a step-shaped base and a coupling optical fiber 6, the heat sink bases 11 of the plurality of semiconductor laser chips 1 are arranged on different steps of the step-shaped base, the focusing lens 5 is fixed on the step-shaped base, and the coupling optical fiber 6 is located on a light path of the converging light.
Further, the plurality of semiconductor laser chips 1 are arranged at equal or non-equal intervals along the length direction of the multilayer ribbon-shaped optical fiber 3, and the positions of the semiconductor laser chips 1 in the length direction of the multilayer ribbon-shaped optical fiber 3 do not coincide with each other, and the space grating type reflectors 33 engraved in the different core layers 31 are arranged along the length direction of the multilayer ribbon-shaped optical fiber 3 and do not coincide with each other in the length direction of the multilayer ribbon-shaped optical fiber 3.
Preferably, the spatial grating type reflector 33 is a total reflection spatial grating type reflector.
In order to achieve the purpose of the invention, the invention also provides a fiber-coupled semiconductor laser which is characterized by comprising a coupling fiber 6, a fused biconical taper fiber 7 and a fiber-coupled optical fiberA semiconductor laser module for outputting laser beam, said semiconductor laser module comprises a plurality of optical path units, each optical path unit comprises a semiconductor laser chip 1, a fast axis collimating lens 2, a slow axis collimating lens 4 and a heat sink base 11, characterized in that, the optical path of the light emitted from each optical path unit is provided with a space grating reflector 33 formed by micro-holes 34 corresponding to the optical path, said space grating reflector 33 is located in the core layer 31 of the ribbon fiber 3, said ribbon fiber 3 is a multi-layer ribbon fiber, said ribbon fiber 3 comprises at least one core layer 31 and cladding layers 32 located on both sides of the core layer, said core layer 31 and cladding layers 32 located on both sides of the core layer are alternatively stacked in parallel, each layer of said core layer 31 is provided with said cladding layer 32 on both sides, the outmost of both sides of said multi-layer ribbon fiber 3 is said cladding layer 32, the refractive index of the core layer 31 is n1The refractive index of the cladding 32 is n2The refractive index n of the core layer1Greater than the refractive index n of the cladding2The semiconductor laser chips 1 are arranged on the respective heat sink bases 11, the fast axis collimating lens 2 is fixed at the light output end of the semiconductor laser chips 1, and the fused biconical taper fiber 7 is used for coupling a plurality of laser beams finally output by the semiconductor laser module into one beam to form convergent light and finally coupling the convergent light into the coupling fiber 6.
Further, the plurality of semiconductor laser chips 1 are arranged at equal or non-equal intervals along the length direction of the multilayer ribbon-shaped optical fiber 3, and the positions of the semiconductor laser chips 1 in the length direction of the multilayer ribbon-shaped optical fiber 3 do not coincide with each other, and the space grating type reflectors 33 engraved in the different core layers 31 are arranged along the length direction of the multilayer ribbon-shaped optical fiber 3 and do not coincide with each other in the length direction of the multilayer ribbon-shaped optical fiber 3.
Preferably, the spatial grating type reflector 33 is a total reflection spatial grating type reflector.
The invention integrates the light beams of a plurality of independent semiconductor laser chips by adopting a plurality of layers of ribbon optical fibers, and is fused with the output optical fiber into a whole by a space coupling or fused tapering mode, thereby reducing a large number of space micro-optical elements, and compared with the prior art, the invention has the beneficial effects that: compact structure, good stability, high efficiency and effective cost reduction.
Drawings
Fig. 1 is a schematic structural view of a semiconductor laser module according to a preferred embodiment of the present invention;
FIG. 2 is a schematic structural view of a multi-layer ribbon fiber according to a preferred embodiment of the present invention;
FIG. 3 is a schematic diagram of a ribbon fiber core layer with a spatial grating mirror written thereon according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of the arrangement of the micro-holes of the total reflection spatial grating mirror according to the preferred embodiment of the present invention;
fig. 5 is a schematic structural view of a semiconductor laser of a preferred embodiment of the present invention;
fig. 6 is a schematic structural view of a semiconductor laser according to another embodiment of the present invention;
description of reference numerals:
1: a semiconductor laser chip; 11: a heat sink base; 12: a cathode; 13: a wire; 2: a fast axis collimating lens; 3: a ribbon fiber; 31: a ribbon fiber core layer; 32: a ribbon fiber cladding; 33: a spatial grating-type mirror; 34: micropores; 4: a slow axis collimating lens; 5: a focusing lens; 6: a coupling optical fiber; 7: and melting the tapered optical fiber.
Detailed Description
The present invention will be described in further detail with reference to the following drawings and specific examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
With combined reference to fig. 1-2, the present invention provides an optical fiber coupling semiconductor laser module, which comprises at least one optical path unit, each optical path unit comprises a semiconductor laser chip 1, a fast axis collimating lens 2, a slow axis collimating lens 4 and a heat sink base 11, one semiconductor laser chip emits a beam of light, the semiconductor laser chip 1 can be horizontally sintered and fixed on the heat sink base 11 through a solder to form an anode of the semiconductor laser chip, the heat sink base 11 can be selected as a copper heat sink base, the solder can be selected as gold tin (AuSn) solder, the semiconductor laser chip 1 is connected with a cathode 12 through a wire 13 such as a gold wire, and the fast axis collimating lens 2 is fixed at an optical output end of the semiconductor laser chip 1;
each optical path unit further comprises a spatial grating type reflector 33, and the spatial grating type reflector 33 is positioned in the core layer 31 of the ribbon fiber 3; the ribbon fiber 3 comprises at least one core layer 31 and cladding layers 32 on both sides of the core layer, the core layer 31 having a refractive index n1The cladding 32 having a refractive index n2Refractive index n of core layer1Greater than the refractive index n of the cladding2(ii) a Preferably, the optical fiber can be a multi-layer ribbon optical fiber, the core layers 31 and the cladding layers 32 on two sides of the core layers are arranged in parallel and alternately in a stacked manner, and the cladding layers 32 are arranged on two sides of each core layer 31, that is, all the core layers 31 are ensured to be positioned in the multi-layer ribbon optical fiber, and the cladding layers 32 are positioned at the outermost parts of two sides of the multi-layer ribbon optical fiber;
in the invention, the width direction of the ribbon fiber is defined as the x-axis direction, the thickness direction is defined as the y-axis direction, the length direction is defined as the z-axis direction, and the laser beam is along the-z-axis direction; with reference to fig. 3 to 4, the spatial grating type mirror 33 is formed by micro-holes 34 arranged in an array structure, the micro-holes 34 can be formed by direct writing with femtosecond laser or electron beam, the depth of the micro-holes 34 is the same as the thickness of the core layer 31, the micro-holes do not penetrate into the cladding layer 32, the shape of the cross section of the micro-holes is not particularly limited, and the micro-holes can be circular, rectangular, square, polygonal, etc.; the micro holes 34 are regularly arranged, in this embodiment, the micro holes are arranged in an equilateral triangle manner, the distance L between the micro holes 34 along the length direction of the ribbon fiber is 1/2 laser wavelength, and at this time, the space grating type reflector 33 forms a total reflection space grating type reflector;
preferably, the semiconductor laser module comprises a plurality of optical path units, the number of the semiconductor laser chips 1 corresponds to the number of the optical path units, and the light emitted by the optical path units refers to the light emitted by the semiconductor laser chips in the optical path units; several semiconductor lasersThe chips 1 are arranged along the length direction of the multilayer ribbon fiber, wherein the width of the heat sink base 11 corresponding to each semiconductor laser chip 1 is W, the positions of the semiconductor laser chips in the length direction of the multilayer ribbon fiber are not overlapped, the semiconductor laser chips can be arranged at equal intervals or non-equal intervals in the length direction of the multilayer ribbon fiber, and the distance L between the heat sink bases corresponding to two adjacent semiconductor laser chips1Can be set according to the output power of the semiconductor laser chip, the larger the power of the semiconductor laser chip is, and the distance L is used for better heat dissipation1Can be increased accordingly; a space grating type reflector 33 corresponding to the light path unit is arranged on the light path of the light emitted by each light path unit and used for reflecting the light emitted by the semiconductor laser chip, the space grating type reflectors 33 are engraved in different core layers of the multilayer ribbon-shaped optical fiber and are arranged at intervals along the length direction of the multilayer ribbon-shaped optical fiber, the positions of the space grating type reflectors 33 in the length direction of the multilayer ribbon-shaped optical fiber 3 are not overlapped, and the distance L between the edge lines of the nearest micropore 34 in two adjacent space grating type reflectors 33 in the width direction of the multilayer ribbon-shaped optical fiber2Slightly larger than the width W of the heat sink base corresponding to the semiconductor laser chip;
the laser beam emitted by the semiconductor laser chip 1 in each optical path unit is firstly collimated in the fast axis direction through the fast axis collimating lens 2, the laser beam collimated by the fast axis enters the corresponding ribbon-shaped optical fiber core layer 31, the laser beam entering a specific core layer is determined by the up-down position of the fast axis collimating lens 2, the laser beam entering the core layer is reflected by the space grating type reflecting mirror 33 and then independently transmitted along the length direction of the multilayer ribbon-shaped optical fiber, and the laser beams reflected by all the core layers of the multilayer ribbon-shaped optical fiber are slowly collimated through the slow axis collimating lens 4;
the refractive index profile of the entire multi-layer ribbon fiber is formed in a multi-channel form, and the numerical aperture NA of the multi-layer ribbon fiber is equal to (n)1 2-n2 2)1/2The laser beams propagating in the core layers 31 are separated by cladding layers 32, each of which is independent of the others, corresponding to the divergence angle of the laser beams after the fast axis collimationIn vertical transmission, laser beams reflected by all the core layers of the multi-layer ribbon fiber are subjected to slow-axis collimation through a slow-axis collimation lens 4.
The invention also provides an optical fiber coupling semiconductor laser, which comprises a focusing lens 5 and a semiconductor laser module capable of outputting a plurality of laser beams, wherein the focusing lens 5 is used for coupling the plurality of laser beams finally output by the semiconductor laser module into one beam to form convergent light;
the semiconductor laser module comprises at least one light path unit, each light path unit comprises a semiconductor laser chip 1, a fast axis collimating lens 2, a slow axis collimating lens 4 and a heat sink base 11, one semiconductor laser chip emits a beam of light, the semiconductor laser chip 1 can be horizontally sintered and fixed on the heat sink base 11 through a solder to form an anode of the semiconductor laser chip, the heat sink base 11 can be selected as a copper heat sink base, the solder can be selected as gold tin (AuSn) solder, the semiconductor laser chip 1 is connected with a cathode 12 through a lead 13 such as a gold wire, and the fast axis collimating lens 2 is fixed at the light output end of the semiconductor laser chip 1;
each optical path unit further comprises a spatial grating type reflector 33, and the spatial grating type reflector 33 is positioned in the core layer 31 of the ribbon fiber 3; the ribbon fiber 3 comprises at least one core layer 31, and cladding layers 32 on both sides of the core layer, the core layer 31 having a refractive index n1The cladding 32 having a refractive index n2Refractive index n of core layer1Greater than the refractive index n of the cladding2(ii) a Preferably, the optical fiber can be a multi-layer ribbon optical fiber, the core layers 31 and the cladding layers 32 on two sides of the core layers are arranged in parallel and alternately in a stacked manner, and the cladding layers 32 are arranged on two sides of each core layer 31, that is, all the core layers 31 are ensured to be positioned in the multi-layer ribbon optical fiber, and the cladding layers 32 are positioned at the outermost parts of two sides of the multi-layer ribbon optical fiber; the space grating type reflector 33 is formed by micropores 34 regularly arranged in an array structure, the micropores 34 can be formed by direct writing of femtosecond laser or electron beam, the depth of the micropores 34 is the same as the thickness of the core layer 31, the micropores do not penetrate into the cladding layer 32, the shape of the cross section of the micropores is not particularly limited, and the micropores can be circular, rectangular, square, or the like,Polygonal and the like;
preferably, the semiconductor laser module comprises a plurality of optical path units, the number of the semiconductor laser chips 1 corresponds to the number of the optical path units, and the light emitted by the optical path units refers to the light emitted by the semiconductor laser chips in the optical path units; the semiconductor laser chips 1 are arranged along the length direction of the multilayer ribbon fiber, wherein the width of the heat sink base 11 corresponding to each semiconductor laser chip 1 is W, the positions of the semiconductor laser chips on the length direction of the multilayer ribbon fiber are not overlapped, the semiconductor laser chips can be arranged at equal intervals or at non-equal intervals in the length direction of the multilayer ribbon fiber, and the distance L between the heat sink bases corresponding to two adjacent semiconductor laser chips1Can be set according to the output power of the semiconductor laser chip, the larger the power of the semiconductor laser chip is, and the distance L is used for better heat dissipation1Can be increased accordingly; a space grating type reflector 33 corresponding to the light path unit is arranged on the light path of the light emitted by each light path unit and used for reflecting the light emitted by the semiconductor laser chip, the space grating type reflectors 33 are engraved in different core layers of the multilayer ribbon-shaped optical fiber and are arranged at intervals along the length direction of the multilayer ribbon-shaped optical fiber, the positions of the space grating type reflectors 33 in the length direction of the multilayer ribbon-shaped optical fiber 3 are not overlapped, and the distance L between the edge lines of the nearest micropore 34 in two adjacent space grating type reflectors 33 in the width direction of the multilayer ribbon-shaped optical fiber2Slightly larger than the width W of the heat sink base corresponding to the semiconductor laser chip;
as shown in fig. 5, the optical fiber coupled semiconductor laser further includes a step-shaped base (not shown in the figure) and a coupling optical fiber 6, each optical path unit is sequentially disposed on each different step of the step-shaped base, the focusing lens 5 is fixed on the step-shaped base, the coupling optical fiber 6 is located on the light path of the converging light, the change of the height of the optical path unit is realized by disposing the optical path unit on different steps, and the optical path unit are independently propagated, and the heat sink base and the step-shaped base may be an integrated structure or a split structure; the laser beam emitted by the semiconductor laser chip 1 in each optical path unit is firstly collimated in the fast axis direction through the fast axis collimating lens 2, the laser beam collimated by the fast axis enters a corresponding ribbon-shaped optical fiber core layer 31, the laser beam entering a certain specific core layer is determined by the upper and lower positions of the fast axis collimating lens 2, and the laser beam entering the core layer is reflected by the space grating type reflecting mirror 33 and then independently transmitted along the length direction of the multilayer ribbon-shaped optical fiber; laser beams reflected by all fiber core layers of the multi-layer ribbon fiber are subjected to slow axis collimation through a columnar slow axis collimation lens 4, the slow axis collimation lens 4 can be an aspherical mirror or a spherical lens group, and is coupled through a focusing lens 5 and finally coupled into a coupling fiber 6, the coupling fiber 6 can be selected from a conventional round multi-mode energy transmission fiber, and the coupling fiber 6 can transmit laser to a required working surface or be used for different applications such as a pumping fiber laser and the like; in the embodiment of the invention, the heat sink base and the step-shaped base are of a split structure;
as shown in fig. 6, the functions of the cylindrical slow-axis collimating lens and the focusing lens are realized by fused biconical taper of the optical fiber, the optical fiber coupled semiconductor laser includes a fused biconical taper optical fiber 7, laser beams reflected from all core layers of the multi-layer ribbon optical fiber are directly coupled into the fused biconical taper optical fiber 7, and finally coupled into the coupling optical fiber 6; the change of the transverse dimension ratio of the fused biconical taper optical fiber 7 meets the condition that: the exit diameter/entrance diameter is less than 0.1 of the numerical aperture of the coupling fiber; the numerical aperture, the end face size and the end face shape of one side of the fusion-spliced tapered optical fiber 7 and the ribbon-shaped optical fiber are the same as those of the ribbon-shaped optical fiber, and the numerical aperture, the end face size and the end face shape of the other side of the fusion-spliced tapered optical fiber are the same as those of the coupling optical fiber 6, and the fusion-spliced tapered optical fiber is directly fused with the coupling optical fiber 6, so that an integrated structure is realized.
Example 1
A quantum well chip with a luminous zone width of 190 mu m, a thickness of 1 mu m and a wavelength of 915nm is used as a semiconductor laser chip 1, the fast axis divergence angle is 40 degrees, the slow axis divergence angle is 10 degrees, and the maximum output power is 18 watts; the heat sink base is made of aluminum nitride (AIN) material, the thickness is 1.5mm, the size is 4.5mm x 4.5mm, 4 semiconductor laser chips 1 are respectively welded on the corresponding AIN heat sink bases through gold-tin solders in parallelPlaced on a step-shaped large base plated with an oxygen-free copper material, and the distance L between bases of AIN heat sinks12mm, the light emitting axes of 4 semiconductor laser chips are positioned on the same horizontal plane; the length of the fast axis collimating lens 2 is 5mm, the focal length is 1.8mm, the distance between the fast axis collimating lens and the light emitting surface of the semiconductor laser chip is 1.8mm, and the central line of the slow axis direction of the fast axis collimating lens is aligned with the light emitting center of the semiconductor laser chip; the multi-layer ribbon-shaped optical fiber 3 is 130mm in length and 200 μm in width, and comprises 4 fiber core layers 31, wherein two sides of each fiber core layer are respectively provided with a cladding 32, namely a 3-layer cladding layer is positioned inside the multi-layer ribbon-shaped optical fiber, a 2-layer cladding layer is positioned at the outermost part of the multi-layer ribbon-shaped optical fiber, the thickness of the fiber core layer 31 is 100 μm, the numerical aperture NA is 0.22, and the thickness of the cladding 32 is 10 μm; adjusting the position of the fast axis collimating lens in the fast axis direction up and down to ensure that the laser beam emitted by each semiconductor laser chip can be just coupled into the corresponding multilayer ribbon-shaped optical fiber core layer; a femtosecond laser with the wavelength of 800nm is used for writing low-refractive-index micropores 34 in a strip-shaped optical fiber core layer, the micropores are arranged in an equilateral triangle lattice manner, the writing positions correspond to a single semiconductor laser chip, the cross section of each micropore 34 is circular, the diameter is 300nm, the thickness is 100 mu m, the interval L is 457.5nm, and the low-refractive-index micropores form a space grating type reflecting mirror 33 with the angle of 45 degrees; the light beams output by the multiple layers of ribbon fibers are collimated by a cylindrical slow-axis collimating lens 4, the clear aperture of the slow-axis collimating lens 4 is 25mm, the focal length of the slow-axis collimating lens 4 is 20mm, and then the light beams pass through an aspheric focusing lens 5, the clear aperture of the focusing lens 5 is 25mm, and the focal length of the focusing lens is 18 mm; the light beam is focused by the focusing lens 5 and then coupled into the coupling optical fiber 6, the coupling optical fiber 6 is selected from conventional multi-mode energy transmission optical fibers, the specification diameter is 200/220, the numerical aperture NA is 0.22, and the total output power of the fiber-coupled semiconductor laser provided by the embodiment is 220 watts at most.
Example 2
According to the embodiment 1, the functions of the cylindrical slow-axis collimating lens and the aspheric focusing lens in the embodiment 1 are realized by fused biconical taper of the optical fiber; adopting a coreless quartz glass rod with the external dimension of 1530 mu m by 1530 mu m and the length of 100mm, tapering 20mm of the central part of the quartz glass rod by using an oxyhydrogen flame tapering machine, and gradually elongating to a circular output port with the diameter of 200 mu m; after tapering, the length of the tapered region is 200mm, the optical fiber in the tapered region is cut into a fused tapered optical fiber 7, the input end of the fused tapered optical fiber 7 is welded with the multilayer ribbon-shaped optical fiber, the output end of the fused tapered optical fiber 7 is welded with the coupling optical fiber 6, and the total output power of the fiber-coupled semiconductor laser provided by the embodiment is 220 watts at most.
The above-described embodiments are intended to be illustrative only and not limiting, and various modifications, changes, or alterations may be made therein by those skilled in the art without departing from the spirit and scope of the invention disclosed herein, and it is intended to cover all such equivalent embodiments within the scope of the invention.

Claims (10)

1. The utility model provides an optical fiber coupling semiconductor laser module, the semiconductor laser module contains a plurality of light path unit, and every light path unit includes a semiconductor laser chip (1), a fast axis collimating lens (2), a slow axis collimating lens (4) and a heat sink base (11), its characterized in that, the light path of the light that every light path unit sent all sets up a space grating type speculum (33) that forms by micropore (34) that corresponds with it, space grating type speculum (33) are arranged in the fibre core layer (31) of ribbon optic fibre (3), ribbon optic fibre (3) are multilayer ribbon optic fibre, ribbon optic fibre (3) include at least one deck fibre core layer (31) and be arranged in cladding (32) on fibre core layer both sides, parallel alternative stacking setting of cladding (32) on fibre core layer (31) and being arranged in fibre core layer both sides, the clad layer (32) is arranged on both sides of each layer of the core layer (31), the clad layer (32) is arranged on the outermost part of the two sides of the multi-layer ribbon-shaped optical fiber (3), and the refractive index of the core layer (31) is n1Said cladding (32) having a refractive index n2The refractive index n of the core layer1Greater than the refractive index n of the cladding2The semiconductor laser chips (1) are arranged on the respective heat sink bases (11), the fast axis collimating lens (2) is fixed at the light output end of the semiconductor laser chips (1), and laser beams reflected by all the fiber core layers of the multilayer ribbon optical fiber pass throughAnd the slow axis collimation is carried out through the slow axis collimation lens (4).
2. A fiber-coupled semiconductor laser module according to claim 1, wherein the plurality of semiconductor laser chips (1) are arranged at equal or non-equal intervals along the length direction of the multilayer ribbon fiber (3), and the positions of the semiconductor laser chips (1) in the length direction of the multilayer ribbon fiber (3) are not overlapped, and the spatial grating type reflectors (33) engraved in different core layers (31) are arranged along the length direction of the multilayer ribbon fiber (3) and are not overlapped.
3. A fiber-coupled semiconductor laser module according to claim 1 or 2, characterized in that the spatial grating-type mirror (33) is a total reflection spatial grating-type mirror.
4. The utility model provides an optical fiber coupling semiconductor laser, its characterized in that, including focusing lens (5) and the semiconductor laser module that can output the laser beam, the semiconductor laser module contains a plurality of light path unit, and every light path unit includes a semiconductor laser chip (1), a fast axis collimating lens (2), a slow axis collimating lens (4) and a heat sink base (11), and the light path of the light that every light path unit sent all sets up a space grating type speculum (33) that forms by micropore (34) that corresponds with it, space grating type speculum (33) are located ribbon fiber (3)'s fibre core layer (31), ribbon fiber (3) are multilayer ribbon fiber, ribbon fiber (3) include at least one deck fibre core layer (31) and be located cladding (32) on fibre core layer both sides, parallel alternative stacking setting of fibre core layer (31) and cladding (32) that are located on fibre core layer both sides, the clad layer (32) is arranged on both sides of each layer of the core layer (31), the clad layer (32) is arranged on the outermost part of the two sides of the multi-layer ribbon-shaped optical fiber (3), and the refractive index of the core layer (31) is n1Said cladding (32) having a refractive index n2The refractive index n of the core layer1Greater than the refractive index n of the cladding2The semiconductor laser modules are characterized in that the semiconductor laser chips (1) are arranged on the heat sink bases (11), the fast axis collimating lens (2) is fixed at the light output end of the semiconductor laser chips (1), laser beams reflected by all fiber core layers of the multi-layer ribbon optical fiber pass through the slow axis collimating lens (4) to be subjected to slow axis collimation, and the focusing lens (5) is used for coupling a plurality of laser beams finally output by the semiconductor laser modules into one beam to form convergent light.
5. An optical fiber coupled semiconductor laser as claimed in claim 4, characterized in that the optical fiber coupled semiconductor laser further comprises a step-shaped base and a coupling optical fiber (6), the heat sink bases (11) of the plurality of semiconductor laser chips (1) are arranged on each different step of the step-shaped base, the focusing lens (5) is fixed on the step-shaped base, and the coupling optical fiber (6) is located on the optical path of the converging light.
6. A fiber-coupled semiconductor laser according to claim 4 or 5, wherein the plurality of semiconductor laser chips (1) are arranged at equal or non-equal intervals along the length direction of the multi-layer ribbon fiber (3), and the positions of the semiconductor laser chips (1) in the length direction of the multi-layer ribbon fiber (3) are not overlapped, and the spatial grating type reflectors (33) engraved in different core layers (31) are arranged along the length direction of the multi-layer ribbon fiber (3) and the positions in the length direction of the multi-layer ribbon fiber (3) are not overlapped.
7. A fiber-coupled semiconductor laser according to claim 4 or 5, characterized in that the spatial grating type mirror (33) is a total reflection spatial grating type mirror.
8. The optical fiber coupling semiconductor laser is characterized by comprising a coupling optical fiber (6), a fused biconical taper optical fiber (7) and a semiconductor laser capable of outputting a laser beamThe ware module, the semiconductor laser module contains a plurality of light path unit, and every light path unit includes a semiconductor laser chip (1), a fast axle collimating lens (2) and a heat sink base (11), and the light path of the light that every light path unit sent all sets up a space grating type speculum (33) that forms by micropore (34) with it corresponds, space grating type speculum (33) are located its place light path fast axle collimating lens (2) with between melting biconical taper optic fibre (7), space grating type speculum (33) are located ribbon fiber (3)'s fibre core layer (31), ribbon fiber (3) are multilayer ribbon fiber, ribbon fiber (3) include at least one deck fibre core layer (31) and be located cladding (32) on fibre core layer both sides, parallel alternately stacking setting of cladding (32) on fibre core layer (31) and being located fibre core layer both sides, the clad layer (32) is arranged on both sides of each layer of the core layer (31), the clad layer (32) is arranged on the outermost part of the two sides of the multi-layer ribbon-shaped optical fiber (3), and the refractive index of the core layer (31) is n1Said cladding (32) having a refractive index n2The refractive index n of the core layer1Greater than the refractive index n of the cladding2The semiconductor laser modules are characterized in that the semiconductor laser chips (1) are arranged on the heat sink bases (11), the fast axis collimating lens (2) is fixed at the light output end of the semiconductor laser chips (1), and the fused biconical taper optical fiber (7) is used for coupling a plurality of laser beams finally output by the semiconductor laser modules into one beam to form convergent light and finally coupling the convergent light into the coupling optical fiber (6).
9. A fiber-coupled semiconductor laser according to claim 8, wherein the plurality of semiconductor laser chips (1) are arranged at equal or non-equal intervals along the length direction of the multilayer ribbon fiber (3), and the positions of the semiconductor laser chips (1) in the length direction of the multilayer ribbon fiber (3) are not overlapped, and the spatial grating type reflectors (33) engraved in different core layers (31) are arranged along the length direction of the multilayer ribbon fiber (3) and are not overlapped.
10. A fiber-coupled semiconductor laser according to any of claims 8 or 9, characterized in that the spatial grating-type mirror (33) is a total reflection spatial grating-type mirror.
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