CN214478427U - Semiconductor laser - Google Patents
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- CN214478427U CN214478427U CN202120901648.1U CN202120901648U CN214478427U CN 214478427 U CN214478427 U CN 214478427U CN 202120901648 U CN202120901648 U CN 202120901648U CN 214478427 U CN214478427 U CN 214478427U
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Abstract
The utility model discloses a semiconductor laser, which comprises a base, a plurality of laser chips, a collimation assembly, a first reflector assembly, a turning prism, a second reflector assembly and an optical fiber; the plurality of laser chips are all arranged on the same plane of the base; the collimation assembly is arranged in the light emergent direction of the laser chip; the first reflector component is arranged in the light emergent direction of the collimation component; the turning prism is arranged in the light emergent direction of the first reflector component; the second reflector component is arranged in the light-emitting direction of the turning prism; the focusing mirror is arranged in the light-emitting direction of the second reflecting mirror assembly; the optical fiber is arranged in the light emitting direction of the focusing mirror to receive the laser beam focused by the focusing mirror, so that the length and the thickness of the base can be reduced, the size of the semiconductor laser can be reduced, and the heat dissipation capacity of the laser chip is improved.
Description
Technical Field
The utility model relates to a semiconductor laser technical field especially relates to a semiconductor laser.
Background
Most of the existing semiconductor lasers use steps arranged in sequence to carry out spatial beam combination, and because each step on a base of the semiconductor laser has a height difference, the thickness of the base is thicker and thicker, and the size of the corresponding base is increased. Meanwhile, each step on the semiconductor laser base has a height difference, so that the height difference between the laser chips mounted at different step positions and the bottom surface heat dissipation unit is inconsistent, and the heat dissipation condition of the laser chips is deteriorated along with the increase of the thickness of the base.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a semiconductor laser can reduce semiconductor laser's size, improves laser chip's heat-sinking capability.
In order to achieve the above object, an embodiment of the present invention provides a semiconductor laser, including:
a base;
the laser chips are arranged on the same plane of the base and used for emitting laser beams;
the collimation assembly is arranged in the light emergent direction of the laser chip and is used for refracting and collimating the laser beam;
the first reflector component is arranged in the light emergent direction of the collimation component and used for reflecting the laser beam;
the turning prism is arranged in the light outgoing direction of the first reflector component and used for refracting the laser beam to enable the laser beam to be parallel to the plane of the base;
the second reflector component is arranged in the light-emitting direction of the turning prism and used for reflecting the laser beam for multiple times so as to enable the laser beam to be opposite;
the focusing mirror is arranged in the light-emitting direction of the second reflecting mirror assembly and used for focusing the laser beam;
and the optical fiber is arranged in the light-emitting direction of the focusing mirror and is used for receiving the laser beam focused by the focusing mirror.
Further, the first mirror assembly comprises a plurality of first mirrors, and the number of the first mirrors corresponds to the number of the laser chips;
assuming that the angle between the laser beam reflected by the first reflector and the horizontal plane is theta, the normal line determined when the laser beam passes through the first reflector and the horizontal plane form an angle of theta
The laser beam incident on the first reflector forms an angle arctan (cos (theta)) with the projection of the normal line on a horizontal plane.
Furthermore, the turning prism is a wedge-shaped turning prism, and the wedge-shaped turning prism comprises a light incident surface, a light emergent surface, a wedge angle formed by the light incident surface and the light emergent surface, and a bottom surface opposite to the wedge angle;
assuming that the wedge angle is alpha, and an included angle between the light emitting surface and the bottom surface is beta;
then the relationship of the α, with the θ and the β satisfies:
wherein n1 is the refractive index of the wedge-shaped turning prism, and n0 is the refractive index of the medium surrounding the wedge-shaped turning prism.
Further, the second mirror assembly comprises at least two second mirrors which are arranged in an opposite inclined mode, and the included angle between every two adjacent second mirrors ranges from 90 degrees to 180 degrees.
Further, an included angle between the two adjacent second reflectors is 90 °.
Furthermore, the semiconductor laser also comprises an optical fiber sleeve;
the optical fiber is positioned in the optical fiber sleeve, and the optical fiber sleeve is used for supporting the optical fiber.
Further, the semiconductor laser also comprises an optical fiber end cap;
the optical fiber end cap is connected with the port of the optical fiber sleeve.
Further, the optical fiber sleeve is a glass sleeve;
the inner cladding surface of the optical fiber in the glass sleeve is in a rough or roughened state.
Furthermore, the semiconductor laser also comprises a plurality of heat sink pieces, and the number of the heat sink pieces corresponds to the number of the laser chips;
the bottom of each laser chip is provided with one heat sink.
Furthermore, the collimation assembly comprises a plurality of fast axis collimation lenses and a plurality of slow axis collimation lenses;
the number of the fast axis collimating lenses and the number of the slow axis collimating lenses correspond to the number of the laser chips;
and the light emitting direction of each laser chip is provided with one fast axis collimating lens and one slow axis collimating lens.
The embodiment of the utility model provides a semiconductor laser, including base, a plurality of laser chips, collimation subassembly, first mirror subassembly, turning prism, second mirror subassembly and optic fibre; the plurality of laser chips are all arranged on the same plane of the base; the collimation assembly is arranged in the light emergent direction of the laser chip; the first reflector component is arranged in the light emergent direction of the collimation component; the turning prism is arranged in the light emergent direction of the first reflector component; the second reflector component is arranged in the light-emitting direction of the turning prism; the focusing mirror is arranged in the light-emitting direction of the second reflecting mirror assembly; the optical fiber is arranged in the light-emitting direction of the focusing mirror to receive the laser beam focused by the focusing mirror. Through setting up a plurality of laser chip at same height, and set up turning prism and second mirror subassembly and adjust laser light path to can avoid setting up the step on the base, not only reduce the thickness and the length of base, be favorable to semiconductor laser's miniaturization, can also improve laser chip heat-sinking capability.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic top view of a semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a change of an optical path of a laser beam on a first reflecting mirror according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating a change of an optical path of a laser beam on a wedge-shaped turning prism according to an embodiment of the present invention;
fig. 4 is a schematic diagram illustrating a change of an optical path of a laser beam on a right-angle wedge-shaped turning prism according to an embodiment of the present invention;
fig. 5 is a schematic diagram illustrating another optical path change of the laser beam on the right-angle wedge-shaped turning prism according to the embodiment of the present invention;
fig. 6 is a partially enlarged schematic view of the laser beam receiving portion a in fig. 1.
Wherein the reference numbers in the drawings are:
a semiconductor laser 100;
the laser comprises a base 101, a laser chip 102, a collimation assembly 103, a first reflector assembly 104, a turning prism 105, a second reflector assembly 106, a focusing mirror 107, a fiber end cap 108, a fiber sleeve 109 and an optical fiber 110;
a fast axis collimating lens 1031, a slow axis collimating lens 1032;
wedge-shaped turning prism 1051, first right-angle wedge-shaped turning prism 1052, second right-angle wedge-shaped turning prism 1053;
laser beam L1, normal L4 to the first mirror;
a projection L31 of the laser beam L1 reflected by the first reflecting mirror on a horizontal plane;
a projection L41 of a normal L4 of the first mirror on a horizontal plane;
the laser beam incident on the first reflector is projected on the horizontal plane through the angle between the laser beam L1 reflected by the first reflector and the horizontal plane, the angle between the normal of the first reflector and the horizontal plane is gamma 1, the angle between the laser beam L1 incident on the first reflector and the projection of the normal of the first reflector on the horizontal plane is gamma 2, the wedge angle alpha of the wedge-shaped turning prism is alpha, and the angle between the light-emitting surface and the bottom surface of the wedge-shaped turning prism is beta.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
It should be noted that directional terms mentioned in the present application, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], etc., refer to directions of the attached drawings only. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting. In the drawings, elements having similar structures are denoted by the same reference numerals. The thicknesses and shapes in the drawings of the present application do not reflect actual proportions, and are merely intended to schematically illustrate the contents of the embodiments of the present application.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The embodiment of the utility model provides a semiconductor laser, this semiconductor laser carries out the detailed description below.
Referring to fig. 1, fig. 1 is a schematic diagram of a top view structure of a semiconductor laser according to an embodiment of the present invention, as shown in fig. 1, the semiconductor laser 100 includes a base 101, a plurality of laser chips 102, a collimating assembly 103, a first mirror assembly 104, a turning prism 105, a second mirror assembly 106, a focusing mirror 107, and an optical fiber 110;
the plurality of laser chips 102 are all disposed on the same plane of the base 101 for emitting a laser beam L1. The collimating assembly 103 is disposed in the light outgoing direction of the laser chip 102, and is configured to refract and collimate the laser beam L1. The first mirror assembly 104 is disposed in the light outgoing direction of the collimating assembly 103, and is configured to reflect the laser beam L1. The turning prism 105 is disposed in the light outgoing direction of the first mirror assembly 104, and is used for refracting the optical path of the laser beam L1, so that the laser beam L1 is parallel to the plane of the base 101. The second mirror assembly 106 is disposed in the light-exiting direction of the turning prism 105, and is used for reflecting the laser beam L1 multiple times to reverse the laser beam L1. The focusing mirror 107 is disposed in the light outgoing direction of the second mirror assembly 106, and is used for focusing the laser beam L1. The optical fiber 110 is disposed in the light outgoing direction of the focusing mirror 107, and is configured to receive the laser beam L1 focused by the focusing mirror 107.
The utility model discloses a set up a plurality of laser chip 102 all on the coplanar of base 101, removed the step that has the difference in height, not only can reduce the thickness of base, make the holistic surface area of semiconductor laser 100 reduce, and enable the whole weight reduction of semiconductor laser 100, make semiconductor laser 100's size diminish.
In addition, the conventional heat dissipation method of the semiconductor laser is to transfer heat generated by the laser chip to a heat dissipation unit under the base and to transfer the heat to the outside (for example, the ground) through the heat dissipation unit to dissipate the heat, so that if a step with a height difference exists on the base, the higher the step is, the weaker the heat dissipation capability is. And the utility model discloses set up a plurality of laser chip 102 on the same plane of base 101, can reduce the thermal resistance of chip heat transfer to the radiating element under the base 101, consequently can avoid leading to the phenomenon that laser chip 102 heat-sinking capability weakens because of the increase of base thickness to this improves laser chip 102's heat-sinking capability, thereby has improved laser chip 102's work efficiency.
The working principle of the semiconductor laser 100 is as follows:
as shown in fig. 1, the present invention provides a semiconductor laser 100, a plurality of laser chips 102 on a base 101 are mounted on the same plane, laser beams L1 emitted from the plurality of laser chips 102 sequentially pass through a fast axis collimating lens 1031 and a slow axis collimating lens 1032 and are collimated, and then are reflected by a first mirror assembly 104 disposed at a specific angle, so as to propagate to a turning prism 105 in a light path close to a plane parallel to the base 101, and propagate to a second mirror assembly 106 in a light path parallel to the plane of the base 101 under the refraction effect of the turning prism 105, and then are reflected by the second mirror assembly 106 multiple times, propagate to a focusing mirror 107, and are focused and coupled into an optical fiber 110 by the focusing mirror 107.
Continuing to refer to fig. 1, the collimating assembly 103 includes a plurality of fast axis collimating lenses 1031 and a plurality of slow axis collimating lenses 1032; the number of the fast axis collimating lenses 1031 and the number of the slow axis collimating lenses 1032 both correspond to the number of the laser chips 102; a fast axis collimating lens 1031 and a slow axis collimating lens 1032 are disposed in the light exit direction of each laser chip 102.
The fast axis collimating lens 1031 is disposed in the light emitting direction of the corresponding laser chip 102, and the slow axis collimating lens 1032 is disposed in the light emitting direction of the fast axis collimating lens 1031. In addition, the positions of the fast axis collimating lens 1031 and the slow axis collimating lens 1032 are interchangeable.
In this embodiment, the first mirror assembly 104 includes a plurality of first mirrors, and the number of the first mirrors corresponds to the number of the laser chips 102; assuming that the angle between the laser beam L1 reflected by the first reflecting mirror and the horizontal plane is θ, the normal line defined when the laser beam L1 passes through the first reflecting mirror is at an angle with the horizontal plane
The laser beam L1 incident on the first mirror forms an angle arctan (cos (θ)) with the projection of the normal line onto the horizontal plane.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a change of an optical path of a laser beam on a first reflector according to an embodiment of the present invention, and as shown in fig. 2, an included angle between a projection L31 of the laser beam L1 reflected by the first reflector and a projection L1 of the laser beam L1 on a horizontal plane is defined as θ.
In an embodiment, since the laser beam exists on the first reflecting mirror, the normal L4 of the first reflecting mirror can be determined according to the laser beam, and at this time, the included angle between the normal L4 and the projection L41 of the normal L4 on the horizontal plane is defined as γ 1, and the included angle γ 1 and the included angle θ have a first predetermined relationship, that is, the included angle γ 1 and the included angle θ have a first predetermined relationship
In another embodiment, with continued reference to fig. 2, an angle γ 2 is defined between the projection L41 of the laser beam L1 and the normal L4 on the horizontal plane, and the angle γ 2 has a second predetermined relationship with the angle θ, that is, γ 2 is arctan (cos (θ)).
Just because the included angle gamma 1 and the included angle theta have a first preset relation, and the included angle gamma 2 and the included angle theta have a second preset relation, each first reflector has a special placing angle, so that the laser beam L1 entering the first reflector and the laser beam L1 reflected by the first reflector can be ensured to be mutually vertical, vertical spatial beam combination is completed, and then multiple paths of laser beams can be combined to obtain a beam combining path which is inclined.
In the present embodiment, theThe turning prism 105 is a wedge-shaped turning prism 1051, and the wedge-shaped turning prism 1051 comprises a light incident surface, a light emitting surface, a wedge angle formed by the light incident surface and the light emitting surface, and a bottom surface opposite to the wedge angle; assuming that the wedge angle is alpha, and the included angle between the light-emitting surface and the bottom surface is beta; then α, the relationship with θ and β satisfies:
where n1 is the refractive index of wedge-shaped turning prism 1051 and n0 is the refractive index of the medium surrounding wedge-shaped turning prism 1051.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a change of an optical path of a laser beam on a wedge-shaped turning prism according to an embodiment of the present invention, where n1 is a refractive index of the wedge-shaped turning prism 1051, n0 is a refractive index of a surrounding medium, α is a wedge angle of the wedge-shaped turning prism 1051, and β is an included angle between a light-emitting surface and a bottom surface of the wedge-shaped turning prism 1051. Since the angle between the laser beam L1 reflected by the first reflecting mirror and the horizontal plane is θ, and the laser beam L1 is the laser beam incident into the wedge-shaped turning prism 1051, the angle between the laser beam L1 incident into the wedge-shaped turning prism 1051 and the horizontal plane is equal to the angle θ between the laser beam L1 reflected by the first reflecting mirror and the horizontal plane.
In one embodiment, wedge angle α of wedge-shaped turning prism 1051 has a third predetermined relationship with angle θ, angle β, refractive index n1 of wedge-shaped turning prism 1051, and refractive index n0 of the medium surrounding wedge-shaped turning prism 1051, i.e., angle α is greater than or equal to
In another embodiment, since the wedge-shaped turning prism 1051 can be set to different shapes, when the wedge-shaped turning prism is the first right-angle wedge-shaped turning prism 1052 and the emergent surface of the first right-angle wedge-shaped turning prism 1052 is perpendicular to the bottom surface, please refer to fig. 4, fig. 4 is a schematic diagram of a change of an optical path of the laser beam L1 on the right-angle wedge-shaped turning prism according to an embodiment of the present invention, at this time, the wedge angle α of the first right-angle wedge-shaped turning prism 1052, the included angle θ, the refractive index n1 of the first right-angle wedge-shaped turning prism 1052, and the fourth right-angle wedge-shaped turning prism 1052A fourth predetermined relationship exists for the refractive index n0 of the medium surrounding right angle wedge-turning prism 1052
In another embodiment, when the wedge-shaped turning prism is the second right-angle wedge-shaped turning prism 1053, and the incident surface of the second right-angle wedge-shaped turning prism 1053 is perpendicular to the bottom surface, please refer to fig. 5, fig. 5 is another schematic diagram of the optical path change of the laser beam L1 on the right-angle wedge-shaped turning prism according to the embodiment of the present invention, at this time, the wedge angle α of the second right-angle wedge-shaped turning prism 1053 has a fifth predetermined relationship with the included angle θ, the refractive index n1 of the second right-angle wedge-shaped turning prism 1053, and the refractive index n0 of the medium around the second right-angle wedge-shaped turning prism 1053, that is, the wedge angle α of the second right-angle wedge-shaped turning prism 1053 has a fifth predetermined relationship with the included angle θ, the refractive index n1 of the second right-angle wedge-shaped turning prism 1053
Due to the fact that the wedge angle alpha is in a preset relation with the included angle theta, the included angle beta, the refractive index n1 of the wedge-shaped turning prism and the refractive index n0 of media around the wedge-shaped turning prism, the wedge-shaped turning prism has a special structure, and therefore the laser beam L1 refracted by the wedge-shaped turning prism can be parallel to the plane of the base 101, and the focusing mirror 107 can couple the laser beam L1 into the optical fiber 110 conveniently.
Compare in prior art most of and carry out the slope turn scheme of reflective through the speculum, the utility model discloses a turn prism 105 carries out the slope turn scheme of transmissive, and it is lower to the manufacturing and the installation tolerance requirement of counter-rotating optical element, is suitable for mass production more.
In this embodiment, the second mirror assembly 106 includes at least two second mirrors disposed obliquely to each other, and the included angle between two adjacent second mirrors ranges from 90 ° to 180 °.
Specifically, the second mirror assembly 106 includes at least one second mirror, and each second mirror has two second mirrors that set up in a relatively inclined manner, and through two second mirrors that set up in a relatively inclined manner, can carry out multiple reflection to laser beam L1, makes laser beam L1 counter-propagating to reach the effect that the light path was adjusted and the light path was deflected, and then can be with laser beam L1 deflection to focusing mirror 107 on.
In addition, by setting the range of the included angle between two adjacent second mirrors to be greater than or equal to 90 ° and less than 180 °, it is possible to prevent the laser beam reflected by the second mirror assembly 106 from intersecting the laser beam incident on the second mirror assembly 106 and affecting the coupling of the laser beam L1 into the optical fiber 110 by the focusing mirror 107.
In this embodiment, the angle between two adjacent second mirrors is 90 °.
Specifically, the angle between two adjacent second mirrors is set to 90 ° as the optimal setting, as shown in fig. 1, the angle between two adjacent second mirrors in fig. 1 is set to 90 °, and by this setting, the laser beam can form three sections of mutually perpendicular optical paths between the two second mirrors, so that the laser beam L1 passing through the two second mirrors can be reflected to the focusing mirror 107 in the opposite direction parallel to the laser beam incident on the second mirror assembly 106, and the laser beam is folded, thereby reducing the propagation length of the laser beam L1 on the plane of the base 101.
Referring to fig. 1, as shown in fig. 1, the base length of the semiconductor laser 100 provided by the embodiment of the present invention is H1, and the length of the laser beam L1 reflected by the second reflecting mirror assembly 106 that is coupled to the optical fiber 110 through the focusing mirror 107 is H2. It can be seen that, since the second mirror assembly 106 is not disposed in the semiconductor laser of the prior art, the optical fiber of the prior art semiconductor laser is disposed at the right side of the turning prism, and since the focusing mirror is further required to focus and couple the laser beam refracted by the turning prism before the optical fiber receives the laser beam, the position of the optical fiber of the prior art semiconductor laser is further away from the turning prism, so that the length of the base of the prior art semiconductor laser increases with the rightward movement of the position of the optical fiber, that is, the length of the base of the prior art semiconductor laser is at least H1+ H2.
The semiconductor laser 100 provided by the embodiment of the present invention can enable the position of the focusing mirror 107 and the optical fiber 110 to be set at the position above the turning prism 105 through the second reflecting mirror assembly 106, thereby reducing the length of the base 101 of the semiconductor laser 100; further, the embodiment of the present invention sets the included angle between two adjacent second reflection mirrors in the second reflection mirror assembly 106 to 90 °, so that the position of the focusing mirror 107 and the optical fiber 110 can be set directly over the laser chip 100, and the length of the base that sets the focusing mirror 107 and the optical fiber 110 on the right side of the turning prism 105 is saved, and finally the embodiment of the present invention provides a base of the semiconductor laser 100, the actual length of which is H1.
Compared with the base length of the semiconductor laser in the prior art which is at least H1+ H2, the semiconductor laser 100 provided by the application can reduce the propagation length of the laser beam L1 on the plane of the base 101 through the arranged second reflecting mirror assembly 106 and the included angle between two adjacent second reflecting mirrors is set to be 90 degrees, so that the length of the base 101 is effectively reduced, the size of the base 101 is reduced, and the cost of the semiconductor laser 100 is saved.
In this embodiment, please refer to fig. 6 and fig. 1, fig. 6 is a schematic partial enlarged view of a laser beam receiving part a in fig. 1, and as shown in fig. 6 and fig. 1, the semiconductor laser 100 according to an embodiment of the present invention further includes an optical fiber sleeve 109; the optical fibers 110 are located within the fiber optic ferrule 109.
Specifically, the length of the optical fiber ferrule 109 is a preset length, the length of the optical fiber 110 in the optical fiber ferrule 109 with the preset length is smaller than the preset length, and the length range of the preset length is 2cm to 5 cm.
In this embodiment, please continue to refer to fig. 6, the semiconductor laser according to the embodiment of the present invention further includes an optical fiber end cap 108; the fiber end cap 108 is connected to a port of a fiber optic ferrule 109.
Specifically, by fusing the end cap 108 of the optical fiber 110 with the port of the optical fiber sleeve 109, the energy density of the laser beam focused by the focusing lens 107 entering the optical fiber sleeve 109 can be reduced, and the power density at the interface between the air and the glass can be reduced, thereby effectively reducing the power threshold requirement of the interface anti-reflection film.
In the present embodiment, the optical fiber ferrule 109 is a glass ferrule; the inner cladding surface of the optical fiber 110 inside the glass sleeve is in a rough or roughened state.
Specifically, the inner cladding surface of the optical fiber 110 in the glass sleeve is subjected to mechanical etching to form an irregular rough surface, and then the chemical etching is used for etching away the scraps and edges and corners remained by the mechanical etching, so that the inner cladding surface of the optical fiber 110 is in a rough or roughened state, or the optical fiber 110 in the glass sleeve is directly coated with an irregular substance with a higher refractive index to break the total reflection mode of the cladding, so that the laser beam overflows at the processing place, the energy output by the optical fiber 110 is ensured to exist only in the core layer, and the stability of the energy of the optical fiber 110 can be enhanced.
In this embodiment, the semiconductor laser 100 provided in the embodiment of the present invention further includes a plurality of heat sinks (not shown in the figure), and the number of the heat sinks corresponds to the number of the laser chips 102; the bottom of each laser chip 102 is provided with a heat sink.
Because the laser chips 102 can generate high heat when emitting laser beams, a heat sink is arranged on the bottom surface of each laser chip 102, so that the heat can be quickly guided to the heat dissipation unit under the base of the semiconductor laser, and the heat dissipation problem of the semiconductor laser is solved.
To sum up, the embodiment of the present invention provides a semiconductor laser, which includes a base, a plurality of laser chips, a collimating assembly, a first mirror assembly, a turning prism, a second mirror assembly and an optical fiber; the plurality of laser chips are all arranged on the same plane of the base; the collimation assembly is arranged in the light emergent direction of the laser chip; the first reflector component is arranged in the light emergent direction of the collimation component; the turning prism is arranged in the light emergent direction of the first reflector component; the second reflector component is arranged in the light-emitting direction of the turning prism; the focusing mirror is arranged in the light-emitting direction of the second reflecting mirror assembly; the optical fiber is arranged in the light-emitting direction of the focusing mirror to receive the laser beam focused by the focusing mirror. Through setting up a plurality of laser chip at same height, and set up turning prism and second mirror subassembly and adjust laser light path to can avoid setting up the step on the base, not only reduce the thickness and the length of base, be favorable to semiconductor laser's miniaturization, can also improve laser chip heat-sinking capability.
In addition to the above embodiments, other embodiments are also possible. All technical solutions formed by using equivalents or equivalent substitutions fall within the protection scope of the claims of the present application.
Although the preferred embodiments have been described in detail, it should be understood that they are not intended to limit the invention, but rather, that various changes and modifications may be made therein by those skilled in the art without departing from the spirit and scope of the invention.
Claims (10)
1. A semiconductor laser, comprising:
a base;
the laser chips are arranged on the same plane of the base and used for emitting laser beams;
the collimation assembly is arranged in the light emergent direction of the laser chip and is used for refracting and collimating the laser beam;
the first reflector component is arranged in the light emergent direction of the collimation component and used for reflecting the laser beam;
the turning prism is arranged in the light outgoing direction of the first reflector component and used for refracting the laser beam to enable the laser beam to be parallel to the plane of the base;
the second reflector component is arranged in the light-emitting direction of the turning prism and used for reflecting the laser beam for multiple times so as to enable the laser beam to be opposite;
the focusing mirror is arranged in the light-emitting direction of the second reflecting mirror assembly and used for focusing the laser beam;
and the optical fiber is arranged in the light-emitting direction of the focusing mirror and is used for receiving the laser beam focused by the focusing mirror.
2. The semiconductor laser of claim 1, wherein the first mirror assembly comprises a number of first mirrors, the number of first mirrors corresponding to the number of laser chips;
assuming that the angle between the laser beam reflected by the first reflector and the horizontal plane is theta, the normal line determined when the laser beam passes through the first reflector and the horizontal plane form an angle of theta
The laser beam incident on the first reflector forms an angle arctan (cos (theta)) with the projection of the normal line on a horizontal plane.
3. The semiconductor laser of claim 2, wherein the turning prism is a wedge-shaped turning prism, the wedge-shaped turning prism comprising an entrance surface, an exit surface, a wedge angle sandwiched between the entrance surface and the exit surface, and a bottom surface opposite the wedge angle;
assuming that the wedge angle is alpha, and an included angle between the light emitting surface and the bottom surface is beta;
then the relationship of the α, with the θ and the β satisfies:
wherein n1 is the refractive index of the wedge-shaped turning prism, and n0 is the refractive index of the medium surrounding the wedge-shaped turning prism.
4. The semiconductor laser of claim 1, wherein said second mirror assembly comprises at least two second mirrors disposed in an opposing oblique arrangement, an included angle between two of said second mirrors disposed adjacent to each other ranging from 90 ° or more and less than 180 °.
5. The semiconductor laser of claim 4, wherein an angle between said adjacently disposed two of said second mirrors is 90 °.
6. The semiconductor laser of any of claims 1-5, further comprising a fiber ferrule;
the optical fiber is positioned in the optical fiber sleeve.
7. A semiconductor laser as claimed in claim 6 wherein the semiconductor laser further comprises an optical fiber end cap;
the optical fiber end cap is connected with the port of the optical fiber sleeve.
8. The semiconductor laser of claim 6, wherein the fiber optic ferrule is a glass ferrule;
the inner cladding surface of the optical fiber in the glass sleeve is in a rough or roughened state.
9. The semiconductor laser of claim 6, further comprising a number of heat sinking members, the number of heat sinking members corresponding to the number of laser chips;
the bottom of each laser chip is provided with one heat sink.
10. The semiconductor laser of claim 6, wherein the collimating assembly comprises a plurality of fast axis collimating lenses and a plurality of slow axis collimating lenses;
the number of the fast axis collimating lenses and the number of the slow axis collimating lenses correspond to the number of the laser chips;
and the light emitting direction of each laser chip is provided with one fast axis collimating lens and one slow axis collimating lens.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114069390A (en) * | 2022-01-17 | 2022-02-18 | 武汉锐科光纤激光技术股份有限公司 | Semiconductor laser module and semiconductor laser |
| CN114188824A (en) * | 2021-12-17 | 2022-03-15 | 中国电子科技集团公司第十三研究所 | 780nm semiconductor laser with tunable wavelength |
| WO2024120420A1 (en) * | 2022-12-09 | 2024-06-13 | 青岛海信激光显示股份有限公司 | Laser device, projection light source and projection apparatus |
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2021
- 2021-04-28 CN CN202120901648.1U patent/CN214478427U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114188824A (en) * | 2021-12-17 | 2022-03-15 | 中国电子科技集团公司第十三研究所 | 780nm semiconductor laser with tunable wavelength |
| CN114069390A (en) * | 2022-01-17 | 2022-02-18 | 武汉锐科光纤激光技术股份有限公司 | Semiconductor laser module and semiconductor laser |
| WO2023134187A1 (en) * | 2022-01-17 | 2023-07-20 | 武汉锐科光纤激光技术股份有限公司 | Semiconductor laser module and semiconductor laser |
| WO2024120420A1 (en) * | 2022-12-09 | 2024-06-13 | 青岛海信激光显示股份有限公司 | Laser device, projection light source and projection apparatus |
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