CN102156352B - Beam shaping method and device thereof and laser display light source module and apparatus - Google Patents
Beam shaping method and device thereof and laser display light source module and apparatus Download PDFInfo
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- CN102156352B CN102156352B CN201110078751.1A CN201110078751A CN102156352B CN 102156352 B CN102156352 B CN 102156352B CN 201110078751 A CN201110078751 A CN 201110078751A CN 102156352 B CN102156352 B CN 102156352B
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Abstract
The invention discloses a beam shaping method and a device thereof and a laser display light source module and an apparatus. The beam shaping device comprises a ladder lens, a first single-tube semiconductor laser device array and a second single-tube semiconductor laser device array, wherein the ladder lens comprises a plurality of reflection parts for reflecting the received light, and further comprises a plurality of supporting parts respectively used for connecting each of the plurality of reflection parts; two sides of the plurality of reflection parts are both provided with reflection films to form a first reflective surface and a second reflective surface, and a light emitting surface of the first single-tube semiconductor laser device array is corresponding to the first reflective surface of the ladder lens; and the light emitting surface of the second single-tube semiconductor laser device array is corresponding to the second reflective surface of the ladder lens. With the beam shaping method and the device thereof and the laser display light source module and the apparatus, beam shaping and structure simplification can be finished by making full use of effective space.
Description
Technical field
The present invention relates to optical field, in particular to a kind of beam shaping method and apparatus and laser display light source module and equipment.
Background technology
Laser display technology has the features such as large colour gamut, low energy consumption, high life, and starts to apply in TV, micro projection, commercialization and entertainment systems.The Red and blue light part of LASER Light Source is mainly realized by semiconductor laser, but because the beam quality of semiconductor laser is very poor, thus need the noise spectra of semiconductor lasers output flash of light preceding an earthquake to carry out beam shaping could be for laser display by coupling fiber output.
Fig. 1 is according to the structure of the single-tube semiconductor laser of correlation technique and light beam schematic diagram, as shown in Figure 1, semiconductor laser chip 12 is grown on heat sink 10, the non-constant of its beam quality, there is the very large angle of divergence, and in the direction perpendicular to PN junction (fast axle 13) be parallel to the direction (slow axis 14) of PN junction, it is very large that beam quality differs, in fast axle 13 directions, the angle of divergence is very large, in slow axis 14 directions, the angle of divergence is very little, and wherein, 15 is hot spot, therefore in the application of laser projection, must noise spectra of semiconductor lasers carry out beam shaping.What we used in laser display light source module is the single-tube semiconductor laser 20 of bar shaped array, as shown in Figure 2, several single-tube semiconductor lasers is arranged point-blank successively, and object is to realize high-power output.
For this problem, provide in the prior art a kind of semiconductor laser device beam shaping device.This semiconductor laser device beam shaping device mainly adopts trapezoidal mirror to realize the beam shaping to single-tube semiconductor laser array, but in this patent, the design of trapezoidal mirror is too simple, this can carry out beam shaping to one-sided semiconductor laser, does not make full use of effective space and completes beam shaping process.
For the problems referred to above, effective solution is not yet proposed at present.
Summary of the invention
For this reason, fundamental purpose of the present invention is to provide a kind of beam shaping method and apparatus and laser display light source module and equipment, to address the above problem.
To achieve these goals, according to an aspect of the present invention, provide a kind of light-beam forming unit of semiconductor laser array.The light-beam forming unit of this semiconductor laser array comprises ladder lens, the first single-tube semiconductor laser array and the second single-tube semiconductor laser array, and wherein, ladder lens comprises: a plurality of reflecting parts, the light arriving for reflection receivable; And a plurality of support sectors, be respectively used to connect each reflecting part in a plurality of reflecting parts, wherein, be provided with reflectance coating to form the first reflective surface and the second reflective surface in the both sides of a plurality of reflecting parts, the exiting surface of the first single-tube semiconductor laser array is corresponding to the first reflective surface of ladder lens; The exiting surface of the second single-tube semiconductor laser array is corresponding to the second reflective surface of ladder lens.
To achieve these goals, according to a further aspect in the invention, provide a kind of beam shaping method of semiconductor laser array.The beam shaping method of this semiconductor laser array comprises: the first reflective surface by ladder lens reflects the light from the first single-tube semiconductor laser array; And reflect the light from the second single-tube semiconductor laser array by the second reflective surface of ladder lens; Wherein, ladder lens comprises: a plurality of reflecting parts, the light arriving for reflection receivable; And a plurality of support sectors, be respectively used to connect each reflecting part in a plurality of reflecting parts, wherein, in the both sides of a plurality of reflecting parts, be provided with reflectance coating to form the first reflective surface and the second reflective surface.
To achieve these goals, according to a further aspect in the invention, a kind of fiber coupling device of semiconductor laser array is provided, and the fiber coupling device of this semiconductor laser array comprises the light-beam forming unit of semiconductor laser array provided by the present invention.
To achieve these goals, according to a further aspect in the invention, provide a kind of laser display light source module, this laser display light source module comprises the fiber coupling device of semiconductor laser array provided by the present invention.
To achieve these goals, according to a further aspect in the invention, provide a kind of laser display apparatus, this laser display apparatus comprises laser display light source module provided by the present invention.
By the present invention, employing comprises the light-beam forming unit of the semiconductor laser array of following part: the light-beam forming unit of this semiconductor laser array comprises ladder lens, the first single-tube semiconductor laser array and the second single-tube semiconductor laser array, wherein, ladder lens comprises: a plurality of reflecting parts, the light arriving for reflection receivable; And a plurality of support sectors, be respectively used to connect each reflecting part in a plurality of reflecting parts, wherein, be provided with reflectance coating to form the first reflective surface and the second reflective surface in the both sides of a plurality of reflecting parts, the exiting surface of the first single-tube semiconductor laser array is corresponding to the first reflective surface of ladder lens; The exiting surface of the second single-tube semiconductor laser array is corresponding to the second reflective surface of ladder lens, can realize the semiconductor laser array of both sides is carried out to beam shaping by a ladder lens, solved and of the prior artly can not make full use of the problem that effective space completes beam shaping, and then reached and make full use of the effect that effective space completes beam shaping and simplified structure.
Accompanying drawing explanation
The accompanying drawing that forms the application's a part is used to provide a further understanding of the present invention, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is according to the structure of the single-tube semiconductor laser of correlation technique and light beam schematic diagram;
Fig. 2 is according to the structural representation of the single-tube semiconductor laser array of correlation technique;
Fig. 3 is according to the schematic diagram of the light-beam forming unit of the semiconductor laser array of the embodiment of the present invention;
Fig. 4 is according to the schematic diagram of the ladder lens of the embodiment of the present invention;
Fig. 5 is according to the schematic diagram of the slow axis collimation lens of the embodiment of the present invention;
Fig. 6 is according to the schematic diagram of the condenser lens of the embodiment of the present invention; And
Fig. 7 is according to the schematic diagram of the laser display apparatus of the embodiment of the present invention.
Embodiment
It should be noted that, in the situation that not conflicting, embodiment and the feature in embodiment in the application can combine mutually.Describe below with reference to the accompanying drawings and in conjunction with the embodiments the present invention in detail.
Embodiment 1
Fig. 3 is according to the schematic diagram of the light-beam forming unit of the semiconductor laser array of first embodiment of the invention.
As shown in Figure 3, the light-beam forming unit of this semiconductor laser array comprises: ladder lens 30, the first single-tube semiconductor laser array A and the second single-tube semiconductor laser array B, wherein, ladder lens 30 comprises: a plurality of reflecting parts 301 (as shown in Figure 4), the light arriving for reflection receivable; And a plurality of support sectors 302 (as shown in Figure 4), be respectively used to connect each reflecting part in a plurality of reflecting parts 301, wherein, in the both sides of a plurality of reflecting parts 301, be provided with reflectance coating to form the first reflective surface and the second reflective surface, the exiting surface of the first single-tube semiconductor laser array A is corresponding to the first reflective surface of ladder lens; The exiting surface of the second single-tube semiconductor laser array B is corresponding to the second reflective surface of ladder lens 30.
In the light-beam forming unit of above-mentioned semiconductor laser array, because the two sides of the reflecting part in ladder lens is provided with reflectance coating to form the first reflective surface and the second reflective surface, thereby, ladder lens can reflect the light from the first single-tube semiconductor laser array and the second single-tube semiconductor laser array simultaneously, thereby need to be when launching from the light of two single-tube semiconductor laser arrays or plural single-tube semiconductor laser array, can utilize same ladder lens to realize the semiconductor laser of both sides is carried out to beam shaping, thereby can make full use of effective space and complete beam shaping process, simplified structure.
Preferably, the first single-tube semiconductor laser array A and the second single-tube semiconductor laser array B include a plurality of single tubes luminous zone, and the light-beam forming unit of semiconductor laser array also comprises:
A plurality of fast axis collimation mirrors 311, be arranged between the first single-tube semiconductor laser array A and ladder lens 30 and a plurality of fast axis collimation mirror 321, between the second single-tube semiconductor laser array B and ladder lens 30, and correspond respectively to a plurality of single tubes luminous zone of the first single-tube semiconductor laser array A and a plurality of single tubes luminous zone of the second single-tube semiconductor laser array B;
The first slow axis collimating mirror 312, is arranged at the first light direction of ladder lens 30; And
The second slow axis collimating mirror 322, is arranged at the second light direction of ladder lens 30.
In the light-beam forming unit of above-mentioned semiconductor laser array, owing to again light beam being carried out to slow axis collimation through after ladder lens, thereby do not need each single-tube semiconductor laser to add a slow axis collimation lens, thereby solved the problem of light-beam forming unit focusing more complicated, and then can reduce costs, and make focusing easier.
Preferably, a plurality of single tubes luminous zone of a plurality of single tubes luminous zone of the first single-tube semiconductor laser array A and the second single-tube semiconductor laser array B is a reflecting part in corresponding a plurality of reflecting part respectively, and each reflecting part single tube corresponding with it luminous zone angle at 45 ° in a plurality of reflecting part.
Preferably, each reflecting part in a plurality of reflecting parts equals respectively the length of the light-emitting area corresponding with it in the projected length of the light-emitting area of a plurality of single tubes luminous zone of the first single-tube semiconductor laser array A and a plurality of single tubes luminous zone of the second single-tube semiconductor laser array B.
Now, the gapped light beam of tool sending by single-tube semiconductor laser array A, after the reflection through ladder lens 30, becomes gapless combined light beam, thereby can eliminate the gap of the light beam that each single-tube semiconductor laser sends.
Preferably, slow axis collimating mirror 312 or 322 width are more than or equal to ladder lens 30 in the projection width of its light direction.
Preferably, the incidence surface of the first slow axis collimating mirror 312 and the second slow axis collimating mirror 322 is arranged in parallel.Incidence surface by the first slow axis collimating mirror 312 and the second slow axis collimating mirror 322 is set to parallel construction, the focusing that is conducive to simplified structure better and is conducive to slow axis collimating mirror.
Preferably, the first single-tube semiconductor laser array A is single-tube semiconductor laser linear array or single-tube semiconductor laser face battle array; And the second single-tube semiconductor laser array B is single-tube semiconductor laser linear array or single-tube semiconductor laser face battle array.
Preferably, when the first single-tube semiconductor laser array A is single-tube semiconductor laser linear array, ladder lens 30 equals the length of the first single-tube semiconductor laser linear array in the projected length of the first single-tube semiconductor laser linear array direction, when the second single-tube semiconductor laser array B is single-tube semiconductor laser linear array, ladder lens 30 equals the length of the second single-tube semiconductor laser linear array in the projected length of the second single-tube semiconductor laser linear array direction.Now, by the reflection of ladder lens 30, can eliminate well the gap of the laser that single-tube semiconductor laser linear array sends.
Preferably, when the first single-tube semiconductor laser array A is single-tube semiconductor laser face battle array, ladder lens equals the width of the first single-tube semiconductor laser face battle array in the projection width of the first single-tube semiconductor laser face battle array direction; When the second single-tube semiconductor laser array B is single-tube semiconductor laser face battle array, ladder lens equals the width of the second single-tube semiconductor laser face battle array in the projection width of the second single-tube semiconductor laser face battle array direction.Now, by the reflection of ladder lens 30, can eliminate well the gap of the laser that single-tube semiconductor laser face battle array sends.
In addition, by adopting single-tube semiconductor laser array A, several single-tube semiconductor lasers are arranged point-blank successively, can be realized high-power output.
Consider that semiconductor laser has the very large angle of divergence on quick shaft direction, in the present invention, preferably, adopt microtrabeculae lens as fast axis collimation mirror 311, make light beam on quick shaft direction close to directional light, a fast axis collimation mirror 311 is installed near each single-tube semiconductor laser exiting surface, and it is very near that the light-emitting area of semiconductor laser and fast axis collimation mirror 311 will lean on, and is conducive to collimation and the focusing of light beam.And because the angle of divergence of semiconductor laser on slow-axis direction is very little, neither be very large at the light path after light-beam forming unit, so again light beam is being carried out to slow axis collimation through after light-beam forming unit, do not need each single-tube semiconductor laser to add 312 of slow axis collimating mirrors, reduced cost, and focusing is easier easily.Realize the collimation of slow axis, be convenient to realize coupling fiber.
Preferably, ladder lens 30 also comprises a plurality of support sectors, and for connecting a plurality of reflecting parts, wherein, a plurality of support sectors are parallel to each other, and a plurality of reflecting part is parallel to each other.By a plurality of support sectors and a plurality of reflecting part are all set to the structure that is parallel to each other, can realize easily the light of each single tube luminous zone in single-tube semiconductor laser array A is all reflexed to same direction.
Preferably, slow axis collimating mirror 312 or 322 width are more than or equal to ladder lens 30 in the projection width of its light direction.Further preferably, by the width of slow axis collimating mirror 312 or 322 is equaled to ladder lens 30 in the projection width of its light direction, can make the width of slow axis collimating mirror 312 or 322 just in time equal the width of the light beam that ladder lens 30 reflects, thereby provide cost savings.
As shown in Figure 3, the light-beam forming unit of the semiconductor laser array by this kind of structure, can obtain symmetrical hot spot, then coupled into optical fibres.Single-tube semiconductor laser is lined up two symmetrical rows, A, B two row's semiconductor laser tube are relative between two point-blank, a ladder lens 30 of middle placement, corresponding with each single tube luminous zone is a slice and light-emitting area eyeglass at 45 °, the projection of the minute surface of eyeglass in the light-emitting area of semiconductor laser just in time equals the length of light-emitting area, eyeglass tow sides all plate high-reflecting film, A like this, after B two row's single-tube semiconductor lasers pass through respectively the collimation of fast axis collimation mirror 311 and fast axis collimation mirror 321, just in time beat on ladder reflecting mirror, through after the reflection of ladder lens 30, the light of each single-tube semiconductor laser outgoing can be close to and be arranged in order on slow-axis direction, utilize respectively again slow axis collimating mirror 312 and slow axis collimating mirror 322 to carry out slow axis collimation, by condenser lens 313 and condenser lens 323, focus on in difference coupled into optical fibres 314 and 324, on the very little slow-axis direction of so original angle of divergence, light beam has expanded, thereby the balanced axial beam quality of speed.From Fig. 4, we can find out, utilize the ladder lens 30 of both sides plated film to realize the beam shaping of A, B two row's single-tube semiconductor lasers, and eliminated the gap between two row single-tube semiconductor lasers, light beam after reflecting through step mirror (ladder lens 30) is through in a slow axis collimating mirror 312 and a condenser lens coupled into optical fibres, as the output terminal of LASER Light Source module.
Preferably, single-tube semiconductor laser array is single-tube semiconductor laser linear array or single-tube semiconductor laser linear array face battle array, wherein, when single-tube semiconductor laser array is single-tube semiconductor laser linear array, ladder lens 30 equals the length of single-tube semiconductor laser linear array in the projected length of single-tube semiconductor laser linear array direction; When single-tube semiconductor laser array is single-tube semiconductor laser face battle array, ladder lens 30 equals the width of single-tube semiconductor laser face battle array in the projection width of single-tube semiconductor laser face battle array direction.
Single-tube semiconductor laser array is due to the impact of the factors such as heat radiation, sometimes need to be designed to single-tube semiconductor laser linear array, now, between each single-tube semiconductor laser, there is very large gap, such structure can be that spot size becomes greatly, light distribution is inhomogeneous, be unfavorable for very much applying in laser display, by being set, step catoptron eliminated gap, as shown in Figure 4, an eyeglass of each step assembling of step mirror, each plates one deck high-reflecting film above eyeglass, the size that designs each eyeglass just reflects light, then in the direction that is parallel to light-emitting area, be arranged in order eyeglass, like this through after reflection, the light beam that each single-tube semiconductor laser sends will be arranged in order, so just eliminated gap.Meanwhile, we plate high-reflecting film on the two sides of each eyeglass, and the laser instrument of opposite side also can reflect same light beam.Because single-tube semiconductor laser dispersing on quick shaft direction is larger, on slow-axis direction, disperse very little, the way reflecting by use is arranged in order light beam on slow axis, beam quality on so just can balanced fast and slow axis direction, and eliminated the gap between single tube semiconductor laser tube, be conducive to next step and carry out coupling fiber.
Fig. 5 is slow axis collimating mirror 312, and Fig. 6 is condenser lens, in the collimation of light process slow axis collimating mirror 312 and the focusing coupled into optical fibres of condenser lens 313 after the shaping of step catoptron, then for laser display.
The light-beam forming unit providing by the embodiment of the present invention, carries out beam shaping and coupling fiber for the single-tube semiconductor laser (as laser diode stack) of non-bar shaped array.In this case, by stripe-geometry semiconductor laser added above to one deck or which floor same stripe laser, be designed to array type shape, then ladder lens 30 is twice being parallel in the direction of luminous flat to increase, the semiconductor laser of each bar shaped will be realized on slow-axis direction and being reset by reflection like this, and has removed the space between semiconductor laser.This scheme is applicable to the situation that power is higher, and project organization can be compacter like this, and volume can be less.
The light-beam forming unit providing by the embodiment of the present invention, can realize the beam shaping of single-tube semiconductor laser bar shaped array, obtain hot spot symmetrical on fast axle and slow-axis direction, and the coupling fiber of having realized two row laser diode bar shape arrays by a ladder lens 30 is exported, removed the space between each single-tube semiconductor laser, this apparatus structure is compact, and operation is comparatively easy, and coupling efficiency is higher.
By utilizing the device that the embodiment of the present invention provides to carry out fast and slow axis collimation and beam shaping to linear array single-tube semiconductor laser, its fast axle and slow axis collimation complete with fast and slow axis collimation lens respectively, and fast axle and slow axis collimation lens can all utilize post lens to be made into.Its position relationship is near the position of semiconductor laser exiting surface, to place successively 312 of 311, fast axis collimation mirror and slow axis collimating mirrors, the distance that 311, fast axis collimation mirror and slow axis collimating mirror are 312 is very near, two eyeglasses are also very near apart from the exiting surface of semiconductor laser, then through the reflection of a ladder lens 30, remove the middle space of single-tube semiconductor laser, afterwards again through focusing on coupling device coupled into optical fibres.The device that the embodiment of the present invention provides adopts a new fast and slow axis alignment method, in the position near the output face of semiconductor laser, with 311, a slice fast axis collimation mirror, collimate on to quick shaft direction, through a ladder lens 30, remove the space between single-tube semiconductor laser afterwards, through reflection, obtain light beam symmetrical in fast and slow axis direction, then the light beam after reflection is carried out to slow axis collimation, in the position of ladder lens 30 bright dippings, add 312 of the larger slow axis collimating mirrors in a slice aperture and realize the slow axis collimation of the entire light of stripe-geometry semiconductor laser array, this eyeglass is made simple and easy, easily focusing, and more miniature 312 of the slow axis collimating mirrors of cost are low.
Embodiment 2
The embodiment of the present invention also provides a kind of fiber coupling device of semiconductor laser array, and the fiber coupling device of this semiconductor laser array comprises the light-beam forming unit that the embodiment of the present invention provides.And laser display light source module, comprise fiber coupling device or light-beam forming unit that the embodiment of the present invention provides.
Embodiment 3
The embodiment of the present invention also provides a kind of laser display apparatus, and this laser display apparatus can be laser projection or laser television.The light-beam forming unit that the embodiment of the present invention provides also can be used as the scheme of high power single tube fiber coupling module.
Fig. 7 is according to the schematic diagram of the laser display apparatus of the embodiment of the present invention.
As shown in Figure 7, after the light-beam forming unit 3 that the light beam that single-tube semiconductor laser array C sends provides through the embodiment of the present invention, directly offer ray machine 5 and utilize to project on screen 6.
By the beam shaping scheme of ladder lens, the light of each single-tube semiconductor laser outgoing is very asymmetric ellipse light spot, and on slow-axis direction, spot size is very large, small-sized on quick shaft direction.Ladder lens 30 is comprised of two parts, with semiconductor laser light-emitting area angle at 45 ° be the reflecting part of ladder lens 30, the support part of parallel part, reflecting part is generally that plated film is realized reflection, supports part just to play the effect that connects and support.The present invention adopts the method for the two-sided plating high-reflecting film in reflecting part, can by a ladder lens 30, realize the beam shaping process of two row single-tube semiconductor lasers, has saved space and cost, is convenient to the microminiaturization of device, and makes light path adjustment simpler.
Preferably, the light-beam forming unit providing for the embodiment of the present invention, single-tube semiconductor laser linear array can also be again on perpendicular to paper direction stacking which floor, then ladder lens 30 is increased, so just can realize the beam shaping of array semi-conductor laser instrument.
The embodiment of the present invention also provides a kind of beam shaping method of semiconductor laser array, and the beam shaping method of this semiconductor laser array comprises:
By a plurality of fast axis collimation mirrors 311, respectively the light that in single-tube semiconductor laser array, send each single tube luminous zone is carried out to fast axis collimation;
Light by catoptron after to fast axis collimation reflects, and obtains folded light beam; And
Utilize 312 pairs of folded light beams of a slow axis collimating mirror to carry out slow axis collimation.
In the beam shaping method of above-mentioned semiconductor laser array, owing to again light beam being carried out to slow axis collimation through after ladder lens, thereby do not need each single-tube semiconductor laser to add a slow axis collimation lens, thereby solved the problem of light-beam forming unit focusing more complicated, and then can reduce costs, and make focusing easier.
Embodiment 4
The embodiment of the present invention also provides a kind of beam shaping method of semiconductor laser array, and the beam shaping method of this semiconductor laser array comprises:
The first reflective surface by ladder lens reflects the light from the first single-tube semiconductor laser array; And
The second reflective surface by ladder lens reflects the light from the second single-tube semiconductor laser array;
Wherein, described ladder lens comprises:
A plurality of reflecting parts, the light arriving for reflection receivable; And
A plurality of support sectors, are respectively used to connect each reflecting part in described a plurality of reflecting part,
Wherein, in the both sides of described a plurality of reflecting parts, be provided with reflectance coating to form described the first reflective surface
With described the second reflective surface.
In the beam shaping method of above-mentioned semiconductor laser array, owing to utilizing ladder lens to reflect the light from the first single-tube semiconductor laser array and the second single-tube semiconductor laser array simultaneously, thereby need to be when launching from the light of two single-tube semiconductor laser arrays or plural single-tube semiconductor laser array, can utilize same ladder lens to realize the semiconductor laser of both sides is carried out to beam shaping, thereby can make full use of effective space and complete beam shaping process, simplified structure.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (8)
1. a light-beam forming unit for semiconductor laser array, is characterized in that comprising:
Ladder lens, comprising:
A plurality of reflecting parts, the light arriving for reflection receivable; And
A plurality of support sectors, are respectively used to connect each reflecting part in described a plurality of reflecting part,
Wherein, in the both sides of described a plurality of reflecting parts, be provided with reflectance coating to form the first reflective surface and the second reflective surface,
The first single-tube semiconductor laser array, its exiting surface is corresponding to the first reflective surface of described ladder lens; And
The second single-tube semiconductor laser array, its exiting surface is corresponding to the second reflective surface of described ladder lens.
Wherein, described the first single-tube semiconductor laser array and described the second single-tube semiconductor laser array include a plurality of single tubes luminous zone, and the light-beam forming unit of described semiconductor laser array also comprises:
A plurality of fast axis collimation mirrors, be arranged between described the first single-tube semiconductor laser array and described ladder lens and between described the second single-tube semiconductor laser array and described ladder lens, and correspond respectively to a plurality of single tubes luminous zone of described the first single-tube semiconductor laser array and a plurality of single tubes luminous zone of described the second single-tube semiconductor laser array, wherein, utilize same described ladder lens to realize the semiconductor laser of both sides is carried out to beam shaping;
The first slow axis collimating mirror, is arranged at the first light direction of described ladder lens; And
The second slow axis collimating mirror, is arranged at the second light direction of described ladder lens,
Wherein, at described the first light direction and described second light direction of described ladder lens, a slow axis collimating mirror is only set respectively,
Wherein, a plurality of single tubes luminous zone of a plurality of single tubes luminous zone of described the first single-tube semiconductor laser array and described the second single-tube semiconductor laser array is a reflecting part in corresponding described a plurality of reflecting parts respectively, and each reflecting part single tube corresponding with it luminous zone angle at 45 ° in described a plurality of reflecting part, wherein, each reflecting part in described a plurality of reflecting part equals respectively the length of the light-emitting area corresponding with it in the projected length of the light-emitting area of a plurality of single tubes luminous zone of described the first single-tube semiconductor laser array and a plurality of single tubes luminous zone of described the second single-tube semiconductor laser array.
2. the light-beam forming unit of semiconductor laser array according to claim 1, it is characterized in that, described a plurality of support sector is parallel to each other, and described a plurality of reflecting part is parallel to each other, the width of described slow axis collimating mirror is more than or equal to described ladder lens in the projection width of its light direction, and the incidence surface of described the first slow axis collimating mirror and described the second slow axis collimating mirror is arranged in parallel.
3. the light-beam forming unit of semiconductor laser array according to claim 1, is characterized in that, described the first single-tube semiconductor laser array is single-tube semiconductor laser linear array or single-tube semiconductor laser face battle array; And described the second single-tube semiconductor laser array is single-tube semiconductor laser linear array or single-tube semiconductor laser face battle array, wherein,
When described the first single-tube semiconductor laser array is single-tube semiconductor laser linear array, described ladder lens equals the length of described the first single-tube semiconductor laser linear array in the projected length of described the first single-tube semiconductor laser linear array direction, when described the second single-tube semiconductor laser array is single-tube semiconductor laser linear array, described ladder lens equals the length of described the second single-tube semiconductor laser linear array in the projected length of described the second single-tube semiconductor laser linear array direction
When described the first single-tube semiconductor laser array is single-tube semiconductor laser face battle array, described ladder lens equals the width of described the first single-tube semiconductor laser face battle array in the projection width of described the first single-tube semiconductor laser face battle array direction; When described the second single-tube semiconductor laser array is single-tube semiconductor laser face battle array, described ladder lens equals the width of described the second single-tube semiconductor laser face battle array in the projection width of described the second single-tube semiconductor laser face battle array direction.
4. the light-beam forming unit of semiconductor laser array according to claim 1, is characterized in that, described the first single-tube semiconductor laser array and described the second single-tube semiconductor laser array are arranged in parallel.
5. a beam shaping method for semiconductor laser array, adopts the light-beam forming unit of the semiconductor laser array described in any one in claim 1 to 4, it is characterized in that comprising:
The first reflective surface by ladder lens reflects the light from the first single-tube semiconductor laser array; And
The second reflective surface by ladder lens reflects the light from the second single-tube semiconductor laser array;
Wherein, described ladder lens comprises:
A plurality of reflecting parts, the light arriving for reflection receivable; And
A plurality of support sectors, are respectively used to connect each reflecting part in described a plurality of reflecting part,
Wherein, in the both sides of described a plurality of reflecting parts, be provided with reflectance coating to form described the first reflective surface and described the second reflective surface.
6. a fiber coupling device for semiconductor laser array, is characterized in that comprising the light-beam forming unit described in any one in claim 1 to 4.
7. a laser display light source module, is characterized in that comprising fiber coupling device claimed in claim 6.
8. a laser display apparatus, is characterized in that comprising laser display light source module claimed in claim 7.
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| CN102904161B (en) * | 2012-09-27 | 2014-08-13 | 夏云 | High-power integrated laser light source |
| CN106911065B (en) * | 2015-12-23 | 2019-03-05 | 无锡视美乐激光显示科技有限公司 | A kind of laser light source set combination structure |
| TWI667505B (en) * | 2016-07-27 | 2019-08-01 | 光環科技股份有限公司 | Optical couping module and light communication apparatus using the same |
| CN106441364A (en) * | 2016-09-30 | 2017-02-22 | 深圳市虚拟现实科技有限公司 | Method and system for automatically rectifying attitude measuring device |
| CN107589499A (en) * | 2017-09-29 | 2018-01-16 | 重庆光遥光电科技有限公司 | More branch semiconductor lasers are coupled into the coupled system of simple optical fiber based on terraced mirror |
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