CN102156352A - Beam shaping method and device thereof and laser display light source module and apparatus - Google Patents
Beam shaping method and device thereof and laser display light source module and apparatus Download PDFInfo
- Publication number
- CN102156352A CN102156352A CN 201110078751 CN201110078751A CN102156352A CN 102156352 A CN102156352 A CN 102156352A CN 201110078751 CN201110078751 CN 201110078751 CN 201110078751 A CN201110078751 A CN 201110078751A CN 102156352 A CN102156352 A CN 102156352A
- Authority
- CN
- China
- Prior art keywords
- single tube
- semiconductor laser
- laser array
- light
- ladder lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a beam shaping method and a device thereof and a laser display light source module and an apparatus. The beam shaping device comprises a ladder lens, a first single-tube semiconductor laser device array and a second single-tube semiconductor laser device array, wherein the ladder lens comprises a plurality of reflection parts for reflecting the received light, and further comprises a plurality of supporting parts respectively used for connecting each of the plurality of reflection parts; two sides of the plurality of reflection parts are both provided with reflection films to form a first reflective surface and a second reflective surface, and a light emitting surface of the first single-tube semiconductor laser device array is corresponding to the first reflective surface of the ladder lens; and the light emitting surface of the second single-tube semiconductor laser device array is corresponding to the second reflective surface of the ladder lens. With the beam shaping method and the device thereof and the laser display light source module and the apparatus, beam shaping and structure simplification can be finished by making full use of effective space.
Description
Technical field
The present invention relates to optical field, in particular to a kind of beam shaping method and apparatus and laser display light source module and equipment.
Background technology
Laser display technology has characteristics such as big colour gamut, low energy consumption, high life, and beginning is used in TV, micro projection, commercialization and entertainment systems.The ruddiness of LASER Light Source and blue light part mainly realizes by semiconductor laser, but because the beam quality of semiconductor laser is very poor, thereby needs the noise spectra of semiconductor lasers output flash of light preceding an earthquake to carry out beam shaping just to be used for laser display by optical fiber coupling output.
Fig. 1 is according to the structure of the single tube semiconductor laser of correlation technique and light beam synoptic diagram, as shown in Figure 1, semiconductor laser chip 12 is grown on heat sink 10, the non-constant of its beam quality, the very large angle of divergence is arranged, and perpendicular to the direction of PN junction (fast axle 13) be parallel to the direction (slow axis 14) of PN junction, it is very big that beam quality differs, the angle of divergence is very big on fast axle 13 directions, the angle of divergence is very little on slow axis 14 directions, and wherein, 15 is hot spot, therefore in the application of laser projection, must noise spectra of semiconductor lasers carry out beam shaping.What we used in the laser display light source module is the single tube semiconductor laser 20 of bar shaped array, as shown in Figure 2, several single tube semiconductor lasers is come on the straight line successively, and purpose is to realize high power output.
At this problem, provide a kind of semiconductor laser device beam shaping device in the prior art.This semiconductor laser device beam shaping device mainly adopts the beam shaping of trapezoidal mirror realization to the single tube semiconductor laser array, but the design of trapezoidal mirror is too simple in this patent, this can carry out beam shaping to one-sided semiconductor laser, does not make full use of effective space and finishes the beam shaping process.
At the problems referred to above, effective solution is not proposed as yet at present.
Summary of the invention
For this reason, fundamental purpose of the present invention is to provide a kind of beam shaping method and apparatus and laser display light source module and equipment, to address the above problem.
To achieve these goals, according to an aspect of the present invention, provide a kind of light-beam forming unit of semiconductor laser array.The light-beam forming unit of this semiconductor laser array comprises ladder lens, the first single tube semiconductor laser array and the second single tube semiconductor laser array, and wherein, ladder lens comprises: a plurality of reflecting parts are used to reflect the light that receives; And a plurality of support sectors, be respectively applied for each reflecting part that connects in a plurality of reflecting parts, wherein, be provided with reflectance coating in the both sides of a plurality of reflecting parts to form first reflective surface and second reflective surface, the exiting surface of the first single tube semiconductor laser array is corresponding to first reflective surface of ladder lens; The exiting surface of the second single tube semiconductor laser array is corresponding to second reflective surface of ladder lens.
To achieve these goals, according to a further aspect in the invention, provide a kind of beam shaping method of semiconductor laser array.The beam shaping method of this semiconductor laser array comprises: first reflective surface reflection by ladder lens is from the light of the first single tube semiconductor laser array; And second reflective surface that passes through ladder lens reflects the light from the second single tube semiconductor laser array; Wherein, ladder lens comprises: a plurality of reflecting parts are used to reflect the light that receives; And a plurality of support sectors, be respectively applied for each reflecting part that connects in a plurality of reflecting parts, wherein, be provided with reflectance coating in the both sides of a plurality of reflecting parts to form first reflective surface and second reflective surface.
To achieve these goals, according to a further aspect in the invention, a kind of fiber coupling device of semiconductor laser array is provided, and the fiber coupling device of this semiconductor laser array comprises the light-beam forming unit of semiconductor laser array provided by the present invention.
To achieve these goals, according to a further aspect in the invention, provide a kind of laser display light source module, this laser display light source module comprises the fiber coupling device of semiconductor laser array provided by the present invention.
To achieve these goals, according to a further aspect in the invention, provide a kind of laser display apparatus, this laser display apparatus comprises laser display light source module provided by the present invention.
By the present invention, employing comprises the light-beam forming unit with the semiconductor laser array of lower part: the light-beam forming unit of this semiconductor laser array comprises ladder lens, the first single tube semiconductor laser array and the second single tube semiconductor laser array, wherein, ladder lens comprises: a plurality of reflecting parts are used to reflect the light that receives; And a plurality of support sectors, be respectively applied for each reflecting part that connects in a plurality of reflecting parts, wherein, be provided with reflectance coating in the both sides of a plurality of reflecting parts to form first reflective surface and second reflective surface, the exiting surface of the first single tube semiconductor laser array is corresponding to first reflective surface of ladder lens; The exiting surface of the second single tube semiconductor laser array is corresponding to second reflective surface of ladder lens, can realize the semiconductor laser array of both sides is carried out beam shaping by a ladder lens, solved and of the prior artly can not make full use of the problem that beam shaping is finished in effective space, and then reached and make full use of the effect that beam shaping and simplified structure are finished in effective space.
Description of drawings
The accompanying drawing that constitutes the application's a part is used to provide further understanding of the present invention, and illustrative examples of the present invention and explanation thereof are used to explain the present invention, do not constitute improper qualification of the present invention.In the accompanying drawings:
Fig. 1 is according to the structure of the single tube semiconductor laser of correlation technique and light beam synoptic diagram;
Fig. 2 is the structural representation according to the single tube semiconductor laser array of correlation technique;
Fig. 3 is the synoptic diagram according to the light-beam forming unit of the semiconductor laser array of the embodiment of the invention;
Fig. 4 is the synoptic diagram according to the ladder lens of the embodiment of the invention;
Fig. 5 is the synoptic diagram according to the slow axis collimation lens of the embodiment of the invention;
Fig. 6 is the synoptic diagram according to the condenser lens of the embodiment of the invention; And
Fig. 7 is the synoptic diagram according to the laser display apparatus of the embodiment of the invention.
Embodiment
Need to prove that under the situation of not conflicting, embodiment and the feature among the embodiment among the application can make up mutually.Describe the present invention below with reference to the accompanying drawings and in conjunction with the embodiments in detail.
Embodiment 1
Fig. 3 is the synoptic diagram according to the light-beam forming unit of the semiconductor laser array of first embodiment of the invention.
As shown in Figure 3, the light-beam forming unit of this semiconductor laser array comprises: ladder lens 30, the first single tube semiconductor laser array A and the second single tube semiconductor laser array B, wherein, ladder lens 30 comprises: a plurality of reflecting parts 301 (as shown in Figure 4) are used to reflect the light that receives; And a plurality of support sectors 302 (as shown in Figure 4), be respectively applied for each reflecting part that connects in a plurality of reflecting parts 301, wherein, be provided with reflectance coating in the both sides of a plurality of reflecting parts 301 to form first reflective surface and second reflective surface, the exiting surface of the first single tube semiconductor laser array A is corresponding to first reflective surface of ladder lens; The exiting surface of the second single tube semiconductor laser array B is corresponding to second reflective surface of ladder lens 30.
In the light-beam forming unit of above-mentioned semiconductor laser array, because the two sides at the reflecting part of ladder lens is provided with reflectance coating to form first reflective surface and second reflective surface, thereby, ladder lens can reflect the light from the first single tube semiconductor laser array and the second single tube semiconductor laser array simultaneously, thereby need be when launching from the light of two single tube semiconductor laser arraies or plural single tube semiconductor laser array, can utilize same ladder lens to realize the semiconductor laser of both sides is carried out beam shaping, thereby can make full use of effective space and finish beam shaping process, simplified structure.
Preferably, the first single tube semiconductor laser array A and the second single tube semiconductor laser array B include a plurality of single tubes luminous zone, and the light-beam forming unit of semiconductor laser array also comprises:
A plurality of fast axis collimation mirrors 311, be arranged between the first single tube semiconductor laser array A and the ladder lens 30 and a plurality of fast axis collimation mirror 321, between the second single tube semiconductor laser array B and the ladder lens 30, and correspond respectively to a plurality of single tubes luminous zone of the first single tube semiconductor laser array A and a plurality of single tubes luminous zone of the second single tube semiconductor laser array B;
The first slow axis collimating mirror 312 is arranged at first light direction of ladder lens 30; And
The second slow axis collimating mirror 322 is arranged at second light direction of ladder lens 30.
In the light-beam forming unit of above-mentioned semiconductor laser array, owing to collimating through again light beam being carried out slow axis after the ladder lens, thereby do not need each single tube semiconductor laser is all added a slow axis collimation eyeglass, thereby solved the problem of light-beam forming unit focusing more complicated, and then can reduce cost, and make focusing easier.
Preferably, a reflecting part in the corresponding respectively a plurality of reflecting parts in a plurality of single tubes luminous zone of a plurality of single tubes luminous zone of the first single tube semiconductor laser array A and the second single tube semiconductor laser array B, and each reflecting part single tube pairing luminous zone angle at 45 in a plurality of reflecting part with it.
Preferably, each reflecting part in a plurality of reflecting parts equals the length of the light-emitting area corresponding with it respectively in the projected length of the light-emitting area of a plurality of single tubes luminous zone of a plurality of single tubes luminous zone of the first single tube semiconductor laser array A and the second single tube semiconductor laser array B.
At this moment, the light beam with gap that sends by single tube semiconductor laser array A becomes gapless combined light beam through after the reflection of ladder lens 30, thereby can eliminate the gap of the light beam that each single tube semiconductor laser sends.
Preferably, slow axis collimating mirror 312 or 322 width are more than or equal to the projection width of ladder lens 30 at its light direction.
Preferably, the incidence surface of the first slow axis collimating mirror 312 and the second slow axis collimating mirror 322 is arranged in parallel.Incidence surface by the first slow axis collimating mirror 312 and the second slow axis collimating mirror 322 is set to parallel construction, the focusing that helps simplified structure better and help the slow axis collimating mirror.
Preferably, the first single tube semiconductor laser array A is single tube diode laser array or single tube laser diode stack; And the second single tube semiconductor laser array B is single tube diode laser array or single tube laser diode stack.
Preferably, when the first single tube semiconductor laser array A is the single tube diode laser array, ladder lens 30 equals the length of the first single tube diode laser array in the projected length of the first single tube diode laser array direction, when the second single tube semiconductor laser array B was the single tube diode laser array, ladder lens 30 equaled the length of the second single tube diode laser array in the projected length of the second single tube diode laser array direction.At this moment, by the reflection of ladder lens 30, can eliminate the gap of the laser that the single tube diode laser array sent well.
Preferably, when the first single tube semiconductor laser array A was the single tube laser diode stack, ladder lens equaled the width of the first single tube laser diode stack in the projection width of the first single tube laser diode stack direction; When the second single tube semiconductor laser array B was the single tube laser diode stack, ladder lens equaled the width of the second single tube laser diode stack in the projection width of the second single tube laser diode stack direction.At this moment, by the reflection of ladder lens 30, can eliminate the gap of the laser that the single tube laser diode stack sent well.
In addition,, several single tube semiconductor lasers are come on the straight line successively, can realize high power output by adopting single tube semiconductor laser array A.
Consider that semiconductor laser has the very large angle of divergence on quick shaft direction, in the present invention, preferably, adopt the microtrabeculae lens as fast axis collimation mirror 311, make light beam on quick shaft direction, approach directional light, a fast axis collimation mirror 311 is installed near each single tube semiconductor laser exiting surface, and it is very near that the light-emitting area of semiconductor laser and fast axis collimation mirror 311 will lean on, and helps the collimation and the focusing of light beam.And because the angle of divergence of semiconductor laser on slow-axis direction is very little, light path behind the process light-beam forming unit neither be very big, so collimating through again light beam being carried out slow axis after the light-beam forming unit, do not need each single tube semiconductor laser all to add 312 of slow axis collimating mirrors, reduced cost, and focusing is easier easily.Realize the collimation of slow axis, be convenient to realize the optical fiber coupling.
Preferably, ladder lens 30 also comprises a plurality of support sectors, is used to connect a plurality of reflecting parts, and wherein, a plurality of support sectors are parallel to each other, and a plurality of reflecting part is parallel to each other.By a plurality of support sectors and a plurality of reflecting part all are set to the structure that is parallel to each other, can realize easily the light of each single tube luminous zone among the single tube semiconductor laser array A is all reflexed to same direction.
Preferably, slow axis collimating mirror 312 or 322 width are more than or equal to the projection width of ladder lens 30 at its light direction.Further preferably, equal the projection width of ladder lens 30 by width at its light direction with slow axis collimating mirror 312 or 322, can make the width of slow axis collimating mirror 312 or 322 just in time equal the width of the light beam that ladder lens 30 reflects, thereby provide cost savings.
As shown in Figure 3, the light-beam forming unit of the semiconductor laser array by this kind structure can obtain the hot spot of symmetry, then coupled into optical fibres.The single tube semiconductor laser is lined up two rows of symmetry, A, B two row's semiconductor laser tube are relative in twos point-blank, ladder lens 30 of middle placement, corresponding with each single tube luminous zone is a slice and light-emitting area eyeglass at 45, the projection of the minute surface of eyeglass on the light-emitting area of semiconductor laser just in time equals the length of light-emitting area, the eyeglass tow sides all plate high-reflecting film, A like this, B two row's single tube semiconductor lasers pass through respectively after the collimation of fast axis collimation mirror 311 and fast axis collimation mirror 321, just in time beat on the ladder catoptron, through after the reflection of ladder lens 30, the light of each single tube semiconductor laser outgoing can be close on slow-axis direction and be arranged in order, utilize slow axis collimating mirror 312 and slow axis collimating mirror 322 to carry out the slow axis collimation more respectively, focus on in the difference coupled into optical fibres 314 and 324 by condenser lens 313 and condenser lens 323, light beam has enlarged on the very little slow-axis direction of so original angle of divergence, thus the balanced axial beam quality of speed.We are as can be seen from Fig. 4, utilize the ladder lens 30 of both sides plated film to realize that A, B two arrange the beam shaping of single tube semiconductor lasers, and two slits of itemizing between the pipe semiconductor laser have been eliminated, through the light beam after step mirror (ladder lens 30) reflection through in a slow axis collimating mirror 312 and the condenser lens coupled into optical fibres, as the output terminal of LASER Light Source module.
Preferably, the single tube semiconductor laser array is single tube diode laser array or single tube diode laser array face battle array, wherein, when the single tube semiconductor laser array was the single tube diode laser array, ladder lens 30 equaled the length of single tube diode laser array in the projected length of single tube diode laser array direction; When the single tube semiconductor laser array was the single tube laser diode stack, ladder lens 30 equaled the width of single tube laser diode stack in the projection width of single tube laser diode stack direction.
The single tube semiconductor laser array is because the influence of factors such as heat radiation, sometimes need to be designed to the single tube diode laser array, at this moment, between each single tube semiconductor laser very big gap is arranged, such structure can be that spot size becomes greatly, light distribution is inhomogeneous, be unfavorable for very much in laser display, using, by being set, the step catoptron then eliminated the gap, as shown in Figure 4, eyeglass of each step assembling of step mirror, each plates one deck high-reflecting film above the eyeglass, and the size that designs each eyeglass makes light just reflect, be arranged in order eyeglass in the direction that is parallel to light-emitting area then, through after the reflection, the light beam that each single tube semiconductor laser sends will be arranged in order, and has so just eliminated the gap like this.Meanwhile, we plate high-reflecting film on the two sides of each eyeglass, and the laser instrument of opposite side also can reflect same light beam.Because single tube semiconductor laser dispersing on quick shaft direction is bigger, on slow-axis direction, disperse very little, make light beam on slow axis, be arranged in order by way with reflection, beam quality on so just can balanced fast and slow axis direction, and eliminated the gap between the single tube semiconductor laser tube, helped next step and carry out the optical fiber coupling.
Fig. 5 is a slow axis collimating mirror 312, and Fig. 6 is a condenser lens, in the collimation of the light process slow axis collimating mirror 312 after the shaping of process step catoptron and the focusing coupled into optical fibres of condenser lens 313, is used for laser display then.
By the light-beam forming unit that the embodiment of the invention provided, carry out beam shaping and optical fiber coupling for the single tube semiconductor laser (as laser diode stack) of non-bar shaped array.In this case, by to adding one deck or which floor same stripe laser above the stripe-geometry semiconductor laser, be designed to the array type shape, then ladder lens 30 is twice being parallel to increase on the direction of luminous flat, the semiconductor laser of each bar shaped will be implemented on the slow-axis direction by reflection and reset like this, and has removed the space between the semiconductor laser.This scheme is applicable to the power condition with higher, and project organization can be compact more like this, and volume can be littler.
By the light-beam forming unit that the embodiment of the invention provided, can realize the beam shaping of single tube semiconductor laser bar shaped array, obtain the hot spot of symmetry on fast axle and the slow-axis direction, and realized the optical fiber coupling output of two row semiconductor laser bar shaped arrays by a ladder lens 30, removed the space between each single tube semiconductor laser, this apparatus structure compactness, and operation is comparatively easy, and coupling efficiency is higher.
By the device that utilizes the embodiment of the invention to provide linear array single tube semiconductor laser is carried out fast and slow axis collimation and beam shaping, its fast axle and slow axis collimation are finished with fast and slow axis collimation eyeglass respectively, and fast axle and slow axis collimation eyeglass can all utilize the post lens to be made into.Its position relation is to place 312 of 311 in fast axis collimation mirror and slow axis collimating mirrors successively near the position of semiconductor laser exiting surface, the distance that 311 in fast axis collimation mirror and slow axis collimating mirror are 312 is very near, two eyeglasses are also very near apart from the exiting surface of semiconductor laser, remove the middle space of single tube semiconductor laser through the reflection of a ladder lens 30 then, afterwards again through focusing on the coupling device coupled into optical fibres.The device that the embodiment of the invention provided adopts a new fast and slow axis alignment method, collimating on to quick shaft direction with 311 in a slice fast axis collimation mirror near the position of the output face of semiconductor laser, remove space between the single tube semiconductor laser through a ladder lens 30 afterwards, obtain the light beam of symmetry on the fast and slow axis direction through reflection, then the light beam after the reflection is carried out the slow axis collimation, add 312 of the bigger slow axis collimating mirrors in a slice aperture in the position of ladder lens 30 bright dippings and realize the slow axis collimation of the entire light of stripe-geometry semiconductor laser array, this eyeglass is made simple and easy, more miniature 312 of the slow axis collimating mirrors of easily focusing, and cost are low.
Embodiment 2
The embodiment of the invention also provides a kind of fiber coupling device of semiconductor laser array, and the fiber coupling device of this semiconductor laser array comprises the light-beam forming unit that the embodiment of the invention provides.And the laser display light source module, comprise fiber coupling device or light-beam forming unit that the embodiment of the invention provides.
The embodiment of the invention also provides a kind of laser display apparatus, and this laser display apparatus can be laser projection or laser television.The light-beam forming unit that the embodiment of the invention provided also can be used as the scheme of high power single tube fiber coupling module.
Fig. 7 is the synoptic diagram according to the laser display apparatus of the embodiment of the invention.
As shown in Figure 7, the light beam that single tube semiconductor laser array C sends directly offers ray machine 5 and utilizes to project on the screen 6 through after the light-beam forming unit 3 that the embodiment of the invention provided.
By the beam shaping scheme of ladder lens, the light of each single tube semiconductor laser outgoing all is very asymmetric ellipse light spot, and spot size is very big on the slow-axis direction, and is small-sized on the quick shaft direction.Ladder lens 30 is made up of two parts, with semiconductor laser light-emitting area angle at 45 be the reflecting part of ladder lens 30, the support part of parallel part, the reflecting part generally is that plated film is realized reflection, supports part just to play the effect that connects and support.The present invention adopts the method for the two-sided plating high-reflecting film in the reflecting part, can itemize with 30 realizations two of a ladder lens and manage the beam shaping process of semiconductor laser, has saved space and cost, is convenient to the microminiaturization of device, and makes that the light path adjustment is simpler.
Preferably, for the light-beam forming unit that the embodiment of the invention provided, which floor the single tube diode laser array can also pile up again on perpendicular to the paper direction, then ladder lens 30 is increased, and so just can realize the beam shaping of array semi-conductor laser instrument.
The embodiment of the invention also provides a kind of beam shaping method of semiconductor laser array, and the beam shaping method of this semiconductor laser array comprises:
Respectively the light that send each single tube luminous zone in the single tube semiconductor laser array is carried out fast axis collimation by a plurality of fast axis collimation mirrors 311;
Reflect by the light of catoptron after, obtain folded light beam fast axis collimation; And
Utilize 312 pairs of folded light beams of a slow axis collimating mirror to carry out the slow axis collimation.
In the beam shaping method of above-mentioned semiconductor laser array, owing to collimating through again light beam being carried out slow axis after the ladder lens, thereby do not need each single tube semiconductor laser is all added a slow axis collimation eyeglass, thereby solved the problem of light-beam forming unit focusing more complicated, and then can reduce cost, and make focusing easier.
Embodiment 4
The embodiment of the invention also provides a kind of beam shaping method of semiconductor laser array, and the beam shaping method of this semiconductor laser array comprises:
First reflective surface reflection by ladder lens is from the light of the first single tube semiconductor laser array; And
Second reflective surface reflection by ladder lens is from the light of the second single tube semiconductor laser array;
Wherein, described ladder lens comprises:
A plurality of reflecting parts are used to reflect the light that receives; And
A plurality of support sectors are respectively applied for each reflecting part that connects in described a plurality of reflecting parts,
Wherein, be provided with reflectance coating in the both sides of described a plurality of reflecting parts to form described first reflective surface
With described second reflective surface.
In the beam shaping method of above-mentioned semiconductor laser array, owing to utilize ladder lens to reflect light simultaneously from the first single tube semiconductor laser array and the second single tube semiconductor laser array, thereby need be when launching from the light of two single tube semiconductor laser arraies or plural single tube semiconductor laser array, can utilize same ladder lens to realize the semiconductor laser of both sides is carried out beam shaping, thereby can make full use of effective space and finish beam shaping process, simplified structure.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the light-beam forming unit of a semiconductor laser array is characterized in that comprising:
Ladder lens comprises:
A plurality of reflecting parts are used to reflect the light that receives; And
A plurality of support sectors are respectively applied for each reflecting part that connects in described a plurality of reflecting parts,
Wherein, be provided with reflectance coating in the both sides of described a plurality of reflecting parts forming first reflective surface and second reflective surface,
The first single tube semiconductor laser array, its exiting surface is corresponding to first reflective surface of described ladder lens; And
The second single tube semiconductor laser array, its exiting surface is corresponding to second reflective surface of described ladder lens.
2. the light-beam forming unit of semiconductor laser array according to claim 1, it is characterized in that, described first single tube semiconductor laser array and the described second single tube semiconductor laser array include a plurality of single tubes luminous zone, and the light-beam forming unit of described semiconductor laser array also comprises:
A plurality of fast axis collimation mirrors, be arranged between described first single tube semiconductor laser array and the described ladder lens and between described second single tube semiconductor laser array and the described ladder lens, and correspond respectively to a plurality of single tubes luminous zone of the described first single tube semiconductor laser array and a plurality of single tubes luminous zone of the described second single tube semiconductor laser array;
The first slow axis collimating mirror is arranged at first light direction of described ladder lens; And
The second slow axis collimating mirror is arranged at second light direction of described ladder lens.
3. the light-beam forming unit of semiconductor laser array according to claim 2, it is characterized in that, a reflecting part in the corresponding respectively described a plurality of reflecting parts in a plurality of single tubes luminous zone of a plurality of single tubes luminous zone of the described first single tube semiconductor laser array and the described second single tube semiconductor laser array, and each reflecting part single tube pairing luminous zone angle at 45 in described a plurality of reflecting part with it, wherein, each reflecting part in described a plurality of reflecting part equals the length of the light-emitting area corresponding with it respectively in the projected length of the light-emitting area of a plurality of single tubes luminous zone of a plurality of single tubes luminous zone of the described first single tube semiconductor laser array and the described second single tube semiconductor laser array.
4. the light-beam forming unit of semiconductor laser array according to claim 2, it is characterized in that, described a plurality of support sector is parallel to each other, and described a plurality of reflecting part is parallel to each other, the width of described slow axis collimating mirror is more than or equal to the projection width of described ladder lens at its light direction, and the incidence surface of described first slow axis collimating mirror and the described second slow axis collimating mirror is arranged in parallel.
5. the light-beam forming unit of semiconductor laser array according to claim 1 is characterized in that, the described first single tube semiconductor laser array is single tube diode laser array or single tube laser diode stack; And the described second single tube semiconductor laser array is single tube diode laser array or single tube laser diode stack, wherein,
When the described first single tube semiconductor laser array is the single tube diode laser array, described ladder lens equals the length of the described first single tube diode laser array in the projected length of the described first single tube diode laser array direction, when the described second single tube semiconductor laser array was the single tube diode laser array, described ladder lens equaled the length of the described second single tube diode laser array in the projected length of the described second single tube diode laser array direction.
When the described first single tube semiconductor laser array was the single tube laser diode stack, described ladder lens equaled the width of the described first single tube laser diode stack in the projection width of the described first single tube laser diode stack direction; When the described second single tube semiconductor laser array was the single tube laser diode stack, described ladder lens equaled the width of the described second single tube laser diode stack in the projection width of the described second single tube laser diode stack direction.
6. the light-beam forming unit of semiconductor laser array according to claim 1 is characterized in that, described first single tube semiconductor laser array and the described second single tube semiconductor laser array are arranged in parallel.
7. the beam shaping method of a semiconductor laser array is characterized in that comprising:
First reflective surface reflection by ladder lens is from the light of the first single tube semiconductor laser array; And
Second reflective surface reflection by ladder lens is from the light of the second single tube semiconductor laser array;
Wherein, described ladder lens comprises:
A plurality of reflecting parts are used to reflect the light that receives; And
A plurality of support sectors are respectively applied for each reflecting part that connects in described a plurality of reflecting parts,
Wherein, be provided with reflectance coating in the both sides of described a plurality of reflecting parts to form described first reflective surface and described second reflective surface.
8. the fiber coupling device of a semiconductor laser array is characterized in that comprising each described light-beam forming unit in the claim 1 to 6.
9. a laser display light source module is characterized in that comprising the described fiber coupling device of claim 8.
10. a laser display apparatus is characterized in that comprising the described laser display light source module of claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110078751.1A CN102156352B (en) | 2011-03-30 | 2011-03-30 | Beam shaping method and device thereof and laser display light source module and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110078751.1A CN102156352B (en) | 2011-03-30 | 2011-03-30 | Beam shaping method and device thereof and laser display light source module and apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102156352A true CN102156352A (en) | 2011-08-17 |
| CN102156352B CN102156352B (en) | 2014-09-03 |
Family
ID=44437907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110078751.1A Active CN102156352B (en) | 2011-03-30 | 2011-03-30 | Beam shaping method and device thereof and laser display light source module and apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102156352B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102904161A (en) * | 2012-09-27 | 2013-01-30 | 夏云 | High-power integrated laser light source |
| CN103176340A (en) * | 2011-12-21 | 2013-06-26 | 三洋电机株式会社 | Light source apparatus and projection image display apparatus |
| CN106441364A (en) * | 2016-09-30 | 2017-02-22 | 深圳市虚拟现实科技有限公司 | Method and system for automatically rectifying attitude measuring device |
| CN106911065A (en) * | 2015-12-23 | 2017-06-30 | 无锡视美乐激光显示科技有限公司 | A kind of LASER Light Source set combination structure |
| CN107589499A (en) * | 2017-09-29 | 2018-01-16 | 重庆光遥光电科技有限公司 | More branch semiconductor lasers are coupled into the coupled system of simple optical fiber based on terraced mirror |
| CN107664794A (en) * | 2016-07-27 | 2018-02-06 | 光环科技股份有限公司 | Optical coupling structure and optical communication device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2582092Y (en) * | 2002-11-01 | 2003-10-22 | 小天使广告股份有限公司 | Improved structure of edge light reflecting picture board |
| CN101144909A (en) * | 2007-10-25 | 2008-03-19 | 中国科学院长春光学精密机械与物理研究所 | Surface array semiconductor laser light beam shaping device |
| CN201191323Y (en) * | 2007-11-09 | 2009-02-04 | 王仲明 | Construction integrating duplex splitted semiconductor laser into single optical fiber |
-
2011
- 2011-03-30 CN CN201110078751.1A patent/CN102156352B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2582092Y (en) * | 2002-11-01 | 2003-10-22 | 小天使广告股份有限公司 | Improved structure of edge light reflecting picture board |
| CN101144909A (en) * | 2007-10-25 | 2008-03-19 | 中国科学院长春光学精密机械与物理研究所 | Surface array semiconductor laser light beam shaping device |
| CN201191323Y (en) * | 2007-11-09 | 2009-02-04 | 王仲明 | Construction integrating duplex splitted semiconductor laser into single optical fiber |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103176340A (en) * | 2011-12-21 | 2013-06-26 | 三洋电机株式会社 | Light source apparatus and projection image display apparatus |
| CN103176340B (en) * | 2011-12-21 | 2016-08-03 | 三洋电机株式会社 | Light supply apparatus and projection type video display device |
| CN102904161A (en) * | 2012-09-27 | 2013-01-30 | 夏云 | High-power integrated laser light source |
| CN102904161B (en) * | 2012-09-27 | 2014-08-13 | 夏云 | High-power integrated laser light source |
| CN106911065A (en) * | 2015-12-23 | 2017-06-30 | 无锡视美乐激光显示科技有限公司 | A kind of LASER Light Source set combination structure |
| CN107664794A (en) * | 2016-07-27 | 2018-02-06 | 光环科技股份有限公司 | Optical coupling structure and optical communication device |
| CN106441364A (en) * | 2016-09-30 | 2017-02-22 | 深圳市虚拟现实科技有限公司 | Method and system for automatically rectifying attitude measuring device |
| CN107589499A (en) * | 2017-09-29 | 2018-01-16 | 重庆光遥光电科技有限公司 | More branch semiconductor lasers are coupled into the coupled system of simple optical fiber based on terraced mirror |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102156352B (en) | 2014-09-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102141683B (en) | Beam shaping method and device and laser display light source module and equipment | |
| US10845694B2 (en) | Light source apparatus and projection system | |
| US8033666B2 (en) | Beam alignment system using arrayed light sources | |
| US10830409B2 (en) | Light source module and projection device | |
| US8066389B2 (en) | Beam alignment chamber providing divergence correction | |
| CN101833150B (en) | Fiber coupling module of high-power semiconductor laser | |
| CN102156352B (en) | Beam shaping method and device thereof and laser display light source module and apparatus | |
| US8132919B2 (en) | Digital projector using arrayed light sources | |
| CN102866500A (en) | Illumination optical system and image display apparatus | |
| CN103713456A (en) | Light source unit and projection display system using same | |
| CN104937487A (en) | Projection-type display device | |
| CN102385232A (en) | Illuminator and projector | |
| CN102652281A (en) | Optical multiplexer and projector | |
| WO2019071951A1 (en) | Fly's eye lens set, and projection device | |
| CN101546045B (en) | Polarization converter and projection system using same | |
| CN104849843A (en) | Laser beam-combining optical device | |
| CN105511087A (en) | Fly's-eye lens-based laser display shimming shaping device | |
| CN101652699A (en) | Color combiner for solid-state light sources | |
| CN111381379A (en) | Beam shaping device and projection equipment | |
| CN102709804A (en) | Integrated laser light source | |
| CN205353467U (en) | Laser display shimming shaping device based on compound eye lens | |
| WO2012129789A1 (en) | Beam shaping method and device and laser display light source module and equipment | |
| CN111880314A (en) | Dodging rod, laser light source lighting equipment and laser direct imaging optical system | |
| CN114185232A (en) | Display device | |
| CN220691244U (en) | Light source system and laser projection apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No. Patentee after: Hisense Video Technology Co.,Ltd. Address before: 266100 Zhuzhou Road, Laoshan District, Shandong, No. 151, No. Patentee before: HISENSE ELECTRIC Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder |