CN102468602A - Semiconductor laser source - Google Patents
Semiconductor laser source Download PDFInfo
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- CN102468602A CN102468602A CN2010105475704A CN201010547570A CN102468602A CN 102468602 A CN102468602 A CN 102468602A CN 2010105475704 A CN2010105475704 A CN 2010105475704A CN 201010547570 A CN201010547570 A CN 201010547570A CN 102468602 A CN102468602 A CN 102468602A
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- semiconductor laser
- heat sink
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- lenticule
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Abstract
The invention discloses a semiconductor laser source, which comprises a heat sink with N steps, M semiconductor lasers and M micro-lenses. Each of the N steps comprises a semiconductor laser mounting surface and a micro-lens mounting surface; the M semiconductor lasers are respectively arranged on M semiconductor laser mounting surfaces of N semiconductor laser mounting surfaces; the M micro-lenses are respectively arranged in the front of each semiconductor laser and is used for collimating lights output by the corresponding semiconductor laser so that the lights output by the semiconductor laser form a collimated light beam, wherein the N and the M are natural number and M is smaller than and equal to N. According to the semiconductor laser source disclosed by the invention, arrangement density of lasers in a unit space is improved by the semiconductor laser with steps under the condition of ensuring heat radiation, that is, the whole volume of the laser source is reduced under the same output power, thus the semiconductor laser source disclosed by the invention has the advantages of simple structure, convenience for regulation, and capabilities of ensuring efficiency and stability of laser coupling and improving feasibility of a system.
Description
Technical field
The present invention relates to a kind of semiconductor laser light resource, relate in particular to the fiber coupling technique of semiconductor laser.
Background technology
Semiconductor laser is claimed laser diode (Laser Diode) again, is most important one type of laser in the practicality.It has advantages such as volume is little, the life-span long, running is reliable, power consumption is few; Be widely used at aspects such as laser communication, optical storage, optical circulator, laser printing, range finding and radars; Need in the occasion of high brightness, high light beam quality laser in laser display or other, also often adopt semiconductor laser as light source.Because it is divergent beams and the relatively low problem of power density that there is output light in semiconductor laser; Single semiconductor laser often can't satisfy the requirement of laser display to light source, therefore in practical application, often need export after the output optical coupling with a plurality of semiconductor lasers.
The mode of at present the output optical coupling of a plurality of semiconductor lasers being exported has two kinds: the one, semiconductor laser is made into semiconductor laser array (being the bar bar) in the chip one-level, and through shaping optical system output together is coupled in the output light process shaping of each semiconductor laser in the array again; Another kind of mode is that output together is coupled in the output light process shaping of a plurality of independently semiconductor lasers, and semiconductor laser can be connected also can parallel connection.Because a plurality of independently semiconductor lasers can screen before the shaping coupling, and can adopt separate refrigeration, the LASER Light Source reliability, consistency and the life-span that are combined into generally are better than the assembly that uses array, thereby use comparatively extensive.
Number be the Chinese utility model patent of CN201203679Y " a kind of multi-channel semiconductor laser coupled is gone into the structure of simple optical fiber " like Granted publication; Promptly adopt output polishing shape to be coupled to mode together with a plurality of independent semiconductor lasers; Its operation principle is for to be installed on a plurality of semiconductor laser chips on the notch cuttype metal heat sink; Microtrabeculae lens are all arranged before each semiconductor laser chip; Its beam fast axis direction back that collimates is formed parallel, equally spaced light beam, and each light beam through collimation all shines on the corresponding speculum, and each folded light beam is all collimated to slow-axis direction by the post lens of correspondence; Obtain fast, slow-axis direction is all compressed, parallel to each other and the also compressed beam combination of its spacing, this light beam is coupled into multimode fiber by lens focus.This patent has compact appearance, and flexibility ratio is high, widely applicable advantage.But for microtrabeculae lens and speculum are installed; It is heat sink speculum to be set; Be mounted and fixed on relatively on the base plate with the notch cuttype metal heat sink speculum is heat sink then, coupled lens and multimode fiber be installed in the light path again, overall structure is complicacy comparatively; Debugging is also complicated, and operator's technical merit is had relatively high expectations.
And for example the patent No. is the United States Patent (USP) " being used to realize high light beam quality and high-brightness laser diode array " of US6240116B1; Primary structure comprises heat sink, a plurality of semiconductor laser of notch cuttype, is used to reduce the lens of output beam divergence; In order to reduce the space (dead band) between the semiconductor laser output light, wherein among at least one embodiment, also comprise a reflection mirror array; Reflection mirror array is optically coupled into optical fiber with semiconductor laser output; Finally obtained some collimated light beams parallel to each other, these adjacent collimated light beam angles of divergence are practically negligible, and " dead band " width between the adjacent beams is limited to the diameter less than a certain light beam.In this patent; Need satisfy any a branch of light when reflection mirror array is provided with only shines corresponding speculum and does not shine on the adjacent speculum; For the spacing of speculum, the size of speculum strict demand is arranged all; Therefore structure is comparatively complicated, and manufacturing cost is higher, and operator's professional knowledge is had certain requirement.
Therefore though had multiple diode laser matrix and sets of beams assembly system at present, to beam quality, the less demanding field of power density, it is less also to lack a kind of volume, simple in structure, semiconductor laser light resource easy and simple to handle at some.
Summary of the invention
The volume that prior art exists is big in order to solve, complex structure, to the demanding problem of operating personnel, the present invention provides a kind of volume little, simple in structure, easy and simple to handle semiconductor laser light resource.
The present invention solves the problems of the technologies described above the technical scheme that adopted like following description:
A kind of semiconductor laser light resource comprises: have the heat sink of N ladder, described each ladder comprises semiconductor laser installing face and lenticule installed surface;
M semiconductor laser is separately positioned on N the M in the semiconductor laser installing face semiconductor laser installing face;
M lenticule, be separately positioned on each semiconductor laser before, be used for the semiconductor laser of correspondence output light is collimated, make the output light of said semiconductor laser form collimated light beam, said N and M are natural number, and M≤N.
Further, preferred construction is, the angle of establishing said semiconductor laser installing face and lenticule installed surface is θ, said 0＜θ≤180 °.
Further, preferred construction is that described semiconductor laser is the semiconductor laser array of single semiconductor laser chip, semiconductor laser bar bar, perhaps a plurality of semiconductor laser chip compositions.
Further, preferred construction is that the electrical connection between the described semiconductor laser is the serial or parallel connection annexation.
Further, preferred construction is, described semiconductor laser and heat sink between connected mode be welding or mechanical connection, described lenticule and heat sink between connected mode be mechanical connection or splicing.
Further, preferred construction is, described semiconductor laser and heat sink between also can be provided with transition heat sink, described transition is heat sink be fixed on heat sink on.
Further, preferred construction is that the output that a said M semiconductor laser sends is the light of identical wavelength only.
Further, preferred construction is that the output that a said M semiconductor laser sends is the light of incomplete same wavelength only.
Further, preferred construction is, fixed focus lenses on said semiconductor laser installing face above heat sink.
Beneficial effect of the present invention is like following description:
The first, employing is stepped heat sink; The number of ladder can be as required laser gross power and power, the emission wavelength kind of single laser choose; The semiconductor laser wavelength of being selected for use can be the same or different, so LASER Light Source has very strong flexibility;
The second, the present invention is under the situation that guarantees heat radiation; Through ladder semiconductor laser is set and has improved the laser arranging density in the unit space, the overall volume that is equivalent under identical power output, dwindle LASER Light Source, simple in structure; Easy to adjust; And can guarantee the efficient and the stability of laser coupled, improve the ease for use of system, be applicable to large-scale modularization production.
Description of drawings
Through the description of its exemplary embodiment being carried out below in conjunction with accompanying drawing, the above-mentioned feature and advantage of the present invention will become apparent and understand easily.
Fig. 1 is the operation principle sketch map of semiconductor laser light resource specific embodiment of the present invention;
Fig. 2 is the operation principle sketch map of another specific embodiment of semiconductor laser light resource of the present invention;
Fig. 3 is the operation principle sketch map of another specific embodiment of semiconductor laser light resource of the present invention;
Fig. 4 is the operation principle sketch map of another specific embodiment of semiconductor laser light resource of the present invention.
Embodiment
Come the present invention is carried out a detailed description below in conjunction with accompanying drawing and specific embodiment.
(embodiment one)
Fig. 1 is the operation principle sketch map of semiconductor laser light resource specific embodiment of the present invention.
Said semiconductor laser light resource comprises:
Have the heat sink of N ladder, described each ladder comprises semiconductor laser installing face and lenticule installed surface;
M semiconductor laser is separately positioned on N the M in the semiconductor laser installing face semiconductor laser installing face;
M lenticule, be separately positioned on each semiconductor laser before, be used for the semiconductor laser of correspondence output light is collimated, make the output light of said semiconductor laser form collimated light beam, said N and M are natural number, and M≤N.
Be 5 with N in the embodiment of the invention, M is 5 for example describes, but is not limited to this selection.
As shown in Figure 1, have the heat sink 1 of 5 ladders 2, described each ladder 2 comprises semiconductor laser installing face 21 and lenticule installed surface 22; 5 semiconductor lasers 3 are separately positioned on 5 semiconductor laser installing faces 21; 5 lenticules 4; Before being separately positioned on each semiconductor laser 3; Be used for the semiconductor laser output light of correspondence is collimated, make the output light of said semiconductor laser 3 form collimated light beam, collimated light beam line focus lens 51 focus on, are coupled among the optical fiber 52.
Among this specific embodiment, 5 semiconductor lasers 3 are identical semiconductor laser, and promptly the output light wavelength of 5 semiconductor lasers 3 is identical.The output light of identical semiconductor laser 3 forms parallel, the equally spaced collimated light beam of optical axis later on through corresponding lenticule 4 collimations.
Need to prove that because the angle of divergence of 5 semiconductor laser 3 output light on quick shaft direction is bigger, therefore the collimated light beam behind corresponding lenticule 4 collimations can not form completely parallel light, but has certain angle of divergence.At some to beam quality, the less demanding occasion of power density; " dead band " width limitations between the light beam is less; Therefore allow collimated light beam can have certain angle of divergence, as long as make all incident beams to focus on, to be coupled into optical fiber 52 through condenser lens 51.
Can find out that from top description technique scheme only has requirement to the diameter of condenser lens, therefore simple in structure, be easy to make.
Wherein, the semiconductor laser installing face 21 on each ladder 2 and the angle theta of lenticule installed surface 22 can be 90 °, also can be other angles.
Fixed form between 5 semiconductor lasers 3 and heat sink 1 can be welding, also can adopt mechanical connection, for example is spirally connected or rivets; Through corresponding installing rack 6 mechanical connections, can adopt splicing between 5 lenticules 4 and heat sink 1, the embodiment of the invention is not done qualification to the fixed form between each element yet.
And semiconductor laser 3 can be selected single semiconductor laser chip, the semiconductor laser array that also can select for use semiconductor laser bar bar or a plurality of semiconductor laser chip to form.
Electric connection mode also can adopt parallel connection for series connection between 5 semiconductor lasers 3, and these all are that those skilled in the art can know, and repeat no more at this.
(embodiment two)
Fig. 2 is the operation principle sketch map of another specific embodiment of semiconductor laser light resource of the present invention.
Referring to shown in Figure 2, the embodiment of the invention is 5 with N still, and M 5 describes for example.Said semiconductor laser light resource comprises:
Have the heat sink 1 of 5 ladders 2, described each ladder 2 comprises semiconductor laser installing face 21 and lenticule installed surface 22; 5 semiconductor lasers 3 are separately positioned on 5 semiconductor laser installing faces 21; 5 lenticules 4; Before being separately positioned on each semiconductor laser 3; Be used for the semiconductor laser output light of correspondence is collimated, make the output light of said semiconductor laser form collimated light beam, be coupled among the optical fiber 52 after collimated light beam line focus lens 51 focus on.
Among this embodiment, 5 semiconductor lasers 3 can be incomplete same semiconductor lasers, and promptly 5 semiconductor laser 3 output light wavelengths are incomplete same.Under the incomplete same situation of 5 semiconductor lasers 3; The collimated light beam that forms behind lenticule 4 collimations of the output light of 5 semiconductor lasers 3 through correspondence shines the phenomenon that can occur the hot spot mutual superposition on the condenser lens 51; But the phenomenon of this hot spot mutual superposition is very little to the coupling influence of laser, so present embodiment is not considered the influence that the hot spot mutual superposition is brought.
A plurality of semiconductor lasers 3 can be respectively red, blue, green light semiconductor in the present embodiment.
Other structure is similar with the described embodiment of Fig. 1 all.That is: the angle theta of each semiconductor laser installing face 21 and lenticule installed surface 22 can be 90 °, also can be other angle.
Fixed form between the described semiconductor laser 3 and heat sink 1 can be welding; Also can adopt other fixed form; For example be spirally connected or rivet; Be fixedly connected through installing rack 6 between the described lenticule 4 and heat sink 1, can adopt splicing yet, the embodiment of the invention is not done qualification to the fixed form between each element.
Among the embodiment, semiconductor laser 3 is chosen single semiconductor laser chip.
(embodiment three)
Fig. 3 is the operation principle sketch map of another specific embodiment of semiconductor laser light resource of the present invention.Embodiment of the invention primary structure is identical with embodiment one.
As shown in Figure 3, be 5 still in the embodiment of the invention with N, M 5 describes for example.Said semiconductor laser light resource comprises:
Have the heat sink 1 of 5 ladders 2, described each ladder 2 comprises semiconductor laser installing face 21 and lenticule installed surface 22; 5 semiconductor lasers 3 are separately positioned on 5 semiconductor laser installing faces; 5 lenticules 4; Before being separately positioned on each semiconductor laser 3; Be used for the semiconductor laser output light of correspondence is collimated; Make the output light of said semiconductor laser 3 form collimated light beam (optical axis of the collimated light beam that only draws among the figure), be coupled among the optical fiber 52 after collimated light beam line focus lens 51 focus on.
Be that with the difference of embodiment one it is heat sink 7 also to be provided with transition between semiconductor laser 3 and the semiconductor laser installing face 21, described transition is heat sink 7 to be fixed on the semiconductor laser installing face 21.
Usually; Transition is heat sink 7 selects the bigger material of the coefficient of heat conduction for use, and heat sink 1 selects the bigger material of specific heat capacity for use, therefore; The heat that semiconductor laser 3 produces can comparatively fast be transmitted in heat sink 1 through transition heat sink 7, realizes the control of noise spectra of semiconductor lasers 3 working temperatures.
(embodiment four)
Fig. 4 is the operation principle sketch map of another specific embodiment of semiconductor laser light resource of the present invention.The embodiment of the invention is that example describes to comprise 4 semiconductor lasers, but is not limited to 4 semiconductor lasers.
Referring to shown in Figure 4, be 5 with N in the embodiment of the invention, M 4 describes for example.Said semiconductor laser light resource comprises:
Have the heat sink 1 of 5 ladders 2, described each ladder 2 comprises semiconductor laser installing face 21 and lenticule installed surface 22; 4 semiconductor lasers 3 are separately positioned on 4 semiconductor laser installing faces 21 in 5 semiconductor laser installing faces 21; 4 lenticules 4; Before being separately positioned on each semiconductor laser 3; Be used for the semiconductor laser output light of correspondence is collimated, make the output light of said semiconductor laser form collimated light beam, be coupled among the optical fiber 52 after collimated light beam line focus lens 51 focus on.
In the present embodiment, 4 semiconductor lasers 3 can be incomplete same semiconductor lasers, and promptly semiconductor laser 3 output light wavelengths are incomplete same.Under the incomplete same situation of a plurality of semiconductor laser 3; The collimated light beam that forms behind output light process lenticule 4 collimations of a plurality of semiconductor lasers 3 shines the phenomenon that can occur the hot spot mutual superposition on the condenser lens 51; But the phenomenon of this hot spot mutual superposition is very little to the coupling influence of laser, so present embodiment is not considered the influence that the hot spot mutual superposition is brought.
In described 5 ladders 2, the angle of the semiconductor laser installing face 21 of the ladder in below and lenticule installed surface 22 equals 90 °, also can be other angle, on the semiconductor laser installing face 21 of this ladder, condenser lens 51 is set.The semiconductor laser installing face 21 of all the other 4 ladders and the angle of lenticule installed surface 22 equal 120 °, also can be other angles greater than 90 °, make things convenient for the installation of lenticule 4.Among this embodiment, condenser lens 51 is directly to be fixed on heat sink 1, and condenser lens 51 is integrated with heat sink 1, simplifies the structure, and has reduced application cost, has dwindled the light source overall volume.
Described semiconductor laser 3 is single semiconductor laser chip, and electric connection mode is parallel connection between the semiconductor laser 3.Fixed form between the described semiconductor laser 3 and heat sink 1 also can adopt to be spirally connected for welding, is fixedly connected through installing rack 6 between the described lenticule 4 and heat sink 1, also can adopt splicing.These all are that those skilled in the art can know.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although the present invention is specified with reference to embodiment; Those of ordinary skill in the art is to be understood that; Technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and the scope of technical scheme of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (10)
1. a semiconductor laser light resource is characterized in that, comprising:
Have the heat sink of N ladder, described each ladder comprises semiconductor laser installing face and lenticule installed surface;
M semiconductor laser is separately positioned on N the M in the semiconductor laser installing face semiconductor laser installing face;
M lenticule, be separately positioned on each semiconductor laser before, be used for the semiconductor laser of correspondence output light is collimated, make the output light of said semiconductor laser form collimated light beam, said N and M are natural number, and M≤N.
2. semiconductor laser light resource according to claim 1 is characterized in that, the angle of establishing said semiconductor laser installing face and lenticule installed surface is θ, said 0＜θ≤180 °.
3. semiconductor laser light resource according to claim 1 is characterized in that described semiconductor laser is single semiconductor laser chip, semiconductor laser bar bar, the semiconductor laser array that perhaps a plurality of semiconductor laser chips are formed.
4. according to claim 1 or 3 described semiconductor laser light resources, it is characterized in that the electrical connection between the described semiconductor laser is the serial or parallel connection annexation.
5. semiconductor laser light resource according to claim 1, it is characterized in that described semiconductor laser and heat sink between connected mode for the welding or mechanical connection, described lenticule and heat sink between connected mode be mechanical connection or splicing.
6. according to claim 1 or 5 described semiconductor laser light resources, it is characterized in that described semiconductor laser and heat sink between also to be provided with transition heat sink, described transition is heat sink be fixed on heat sink on.
7. semiconductor laser light resource according to claim 6 is characterized in that on the heat sink semiconductor laser installing face that is fixed on the heat sink step of said transition.
8. semiconductor laser light resource according to claim 1 is characterized in that the only light of identical wavelength of output that a said M semiconductor laser sends.
9. semiconductor laser light resource according to claim 1 is characterized in that the only light of incomplete same wavelength of output that a said M semiconductor laser sends.
10. according to Claim 8 or 9 described semiconductor laser light resources, it is characterized in that fixed focus lenses on said heat sink semiconductor laser installing face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105475704A CN102468602A (en) | 2010-11-17 | 2010-11-17 | Semiconductor laser source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105475704A CN102468602A (en) | 2010-11-17 | 2010-11-17 | Semiconductor laser source |
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| CN102468602A true CN102468602A (en) | 2012-05-23 |
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| CN2010105475704A Pending CN102468602A (en) | 2010-11-17 | 2010-11-17 | Semiconductor laser source |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018530768A (en) * | 2015-07-15 | 2018-10-18 | ヌブル インク | Applications, methods, and systems for laser delivery addressable arrays |
| CN114967118A (en) * | 2022-04-20 | 2022-08-30 | 清华大学深圳国际研究生院 | Optical parameter control method and device for orthogonal reflector array |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN201191323Y (en) * | 2007-11-09 | 2009-02-04 | 王仲明 | Construction integrating duplex splitted semiconductor laser into single optical fiber |
| CN201331603Y (en) * | 2008-12-08 | 2009-10-21 | 王仲明 | Laser module coupling multi-path semi-conductor laser into single optical fiber |
| CN101833150A (en) * | 2010-05-18 | 2010-09-15 | 中国科学院长春光学精密机械与物理研究所 | Fiber coupling module of high-power semiconductor laser |
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2010
- 2010-11-17 CN CN2010105475704A patent/CN102468602A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201191323Y (en) * | 2007-11-09 | 2009-02-04 | 王仲明 | Construction integrating duplex splitted semiconductor laser into single optical fiber |
| CN201331603Y (en) * | 2008-12-08 | 2009-10-21 | 王仲明 | Laser module coupling multi-path semi-conductor laser into single optical fiber |
| CN101833150A (en) * | 2010-05-18 | 2010-09-15 | 中国科学院长春光学精密机械与物理研究所 | Fiber coupling module of high-power semiconductor laser |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018530768A (en) * | 2015-07-15 | 2018-10-18 | ヌブル インク | Applications, methods, and systems for laser delivery addressable arrays |
| JP2021073681A (en) * | 2015-07-15 | 2021-05-13 | ヌブル インク | Applications, methods and systems for laser deliver addressable array |
| CN113067252A (en) * | 2015-07-15 | 2021-07-02 | 努布鲁有限公司 | Applications, methods and systems for laser-transmissive addressable arrays |
| CN114967118A (en) * | 2022-04-20 | 2022-08-30 | 清华大学深圳国际研究生院 | Optical parameter control method and device for orthogonal reflector array |
| CN114967118B (en) * | 2022-04-20 | 2024-02-09 | 清华大学深圳国际研究生院 | Method and device for controlling optical parameters of orthogonal reflector array |
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Application publication date: 20120523 |