CN202995141U - Light beam shaping structure of semiconductor laser array - Google Patents
Light beam shaping structure of semiconductor laser array Download PDFInfo
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- CN202995141U CN202995141U CN 201220685959 CN201220685959U CN202995141U CN 202995141 U CN202995141 U CN 202995141U CN 201220685959 CN201220685959 CN 201220685959 CN 201220685959 U CN201220685959 U CN 201220685959U CN 202995141 U CN202995141 U CN 202995141U
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Abstract
A light beam shaping structure of a semiconductor laser array is composed of an array composed of multi-row of semiconductor lasers, collimating lenses and reflectors, carries out shaping and twice reflection on the light beams of the semiconductor laser array to obtain the two-dimensional closely packed collimated light beams. The light beam of each laser is collimated by a collimating lens. By taking each row as a set, the collimated light beams of the multiple lasers of each set are reflected by the corresponding reflectors and are shaped into one-dimensional linearly arranged collimated light beams which are parallel with each other, are compressed and are closely packed; and then each set of linearly arranged collimated light beams are reflected by the second reflectors respectively to form the mutually parallel superposed two-dimensional closely packed collimated light beams to output. The wavelengths of the lasers in the array can be same or not. The closely packed light beams obtained by the two-dimensional shaping also can be coupled to a fiber efficiently via focusing lenses.
Description
Technical field
The present invention has realized that the output light shaping of semiconductor laser battle array merges, and belongs to the laser application.
Background technology
In laser applications such as Laser Processing, laser display, laser medicines, more high brightness, more high-power Laser output have been paid huge and persevering effort to people in order to obtain.Along with the ripe and progress of semiconductor laser technology, high brightness, high-power semiconductor laser have obtained tremendous development.But the power of semiconductor laser and the raising of power density are subject to the restriction of material and structure.
Adopt traditionally the mode of semiconductor laser array chip to improve output power.But the mode of array chip can only promote output power and can not improve output brightness.The light beam of the array chip of directly exporting, due to gapped between luminescence unit, its beam quality is also lower than single luminescence unit.There are many technical schemes to adopt various means to carry out shaping, rearrangement to the beamlet of the unit of the light beam of array output, they are closely aligned together, to improve overall brightness.These schemes have all been used complicated lens, prism system bar none, install, debug all more difficult.
Compare with array chip, the single die semiconductor laser of single luminous zone has many advantages.Its package cooling is better, so life and reliability is better; It can screen by strict program before use, has improved reliability.But single tube power is limited, in order to obtain higher power, can adopt many single die series connection, photosynthetic and the solid matter that they is sent by certain optical instrument, a kind of method of obtaining high power, high power density laser output that this has become main flow especially is applied in the laser module of coupling fiber output.This Multi-core scheme is used cheap discrete lens, all is better than the array mode on cost and manufacture difficulty.
At present, adopting the scheme of Multi-core shaping, is to being arranged in one dimension mostly, or the single tube array of distortion one dimension carries out shaping, the compression spacing forms the solid matter light beam, as No. 7733932 United States Patent (USP)s, and 201010174581.2,200820180693.7, the patent such as 200720195326.X.If further strengthen output power, can be two dimension with one dimension single tube array extension.The mode of having described two-dimensional array in some patent schemes is arranged, and as the scheme in No. 200610149340.6 patents, but it does not accomplish light beam is all compressed solid matter at two-dimensional directional, and making and technique all cumbersome.
Summary of the invention
The present invention has designed a kind of two-dimensional semiconductor laser array light beam reshaping structure, the array, collimation lens, the catoptron that are made of the multirow semiconductor laser consist of, the light beam of noise spectra of semiconductor lasers array carries out shaping, arrange by twice reflection, obtain two-dimentional solid matter collimated light beam output.
Multiple semiconductor laser devices is arranged in the multirow array format with behavior unit, sees Fig. 1 and Fig. 2, and the light beam of each laser instrument 1 first passes through collimation lens 2 collimations separately.
With group of each behavior, as shown in Figure 1.Laser instrument in each group is coplanar in the XY plane through the light beam 3 of collimation, penetrate and reflected by the catoptron 4.1 of a correspondence respectively along Y-direction, light beam after reflection is parallel to each other in Y-direction, the adjacent catoptron distance that staggers on the optical transmission direction Y-direction, make each catoptron not block other light beams, and this distance makes the spacing of adjacent beams be compressed to minimum, at beam outlet A place, form a compact arranged combination collimated light beam 5.1 of one-dimensional linear, the arrangement of its beam cross-section is as shown in 6.1.
Reflect for the second time shaping as shown in Figure 2.be similar to previous step, again the compact arranged combination collimated light beam 5.1 of the one-dimensional linear of a plurality of groups is reflected by second catoptron 4.2 separately again, make respectively organize between the compact arranged combination collimated light beam of one-dimensional linear parallel to each other and along the outgoing of Z direction, adjacent catoptron on optical transmission direction along the directions X distance that staggers, each catoptron does not block other light beams, and this distance makes the spacing between the compact arranged combination collimated light beam of the one-dimensional linear of adjacent sets be compressed to minimum, at beam outlet B place, be built up two-dimentional compact arranged collimated light beam 5.2 outputs, its beam cross-section arrangement mode is as shown in 6.2, be two-dimentional close-packed arrays, reach the Shu Xiaoguo that closes of maximum brightness.
The designed structure of the present invention is a structure very flexibly: in the two-dimensional semiconductor laser array, the quantity of the laser instrument of every delegation can be identical, also can be different; The output power of each semiconductor laser, wavelength, packing forms can be identical, also can be different.
When needs closed bundle with different wave length, the mode that can adopt wavelength multiplexing to close bundle was seen the first reflection schematic diagram of Fig. 3.Adjacent two laser instrument 1.a and 1.b emission wavelength respectively are the light beam of λ 1 and λ 2, are made into collimated light into 3.a and 3.b two bundle different wave lengths through separately collimation lens 2.a and 2.b respectively.According to scheme noted earlier, this two-beam should be reflected by two catoptrons of the certain distance that staggers on Y-direction respectively, but also can adopt another scheme, forward catoptron 4.1 can change a dichroic mirror 7.11 on the beam Propagation direction, and dichroic mirror and lean on after catoptron 4.1a between need not stagger on the optical transmission direction Y-direction.The light transmission that 7.11 pairs of wavelength of dichroic mirror are λ 1 is the light reflection of λ 2 to wavelength, so be light beam 5.11 by the wavelength of the back mirror 4.1a reflection light beam 3.1 that is λ 1 the coaxial bundle that closes of light beam 3.b that to see through dichroic mirror 7.11 and wavelength through its reflection be λ 2.
Further, the light of dichroic mirror reflection and the light that sees through dichroic mirror can only comprise a wavelength respectively, also can comprise a plurality of wavelength.For example, above-mentioned shown in Figure 3 comprise two wavelength X 1 and λ 2 close light beams 5.11, with emission wavelength be the light beam 3.c of laser instrument 1.c after collimating mirror 2.c collimation of λ 3, be the collimated light beam 5.12 that includes λ 1, λ 2 and 3 three wavelength of λ by a coaxial bundle that closes of dichroic mirror 7.12, dichroic mirror 7.12 can reflection wavelength be the light of λ 3, can transmission peak wavelength be the light of λ 1 and λ 2 simultaneously.
To reflection for the second time, if the wavelength of laser instrument is not different on the same group, also can to do the similarly coaxial bundle that closes through the linear compact arranged combination collimated light beam of first reflection shaping, see Fig. 4.The linear compact arranged combination collimated light beam of three different wave lengths is respectively 5.1b, 5.1g and 5.1r.After light beam 5.1r reflects through catoptron 4.2, double color plate 9.a is crossed in transmission, closes Shu Chengwei 5.2rg with the light beam 5.1g that reflects through 9.a; This bundle light 5.2rg that closes that comprises dual wavelength sees through another one double color plate 9.b again, closes bundle with the light beam 5.1b that reflects through 9.b, becomes the coaxial collimated light beam 5.2rgb that merges three different wave length light beams.
The connected mode of the power drives between each laser instrument can be diversified, very flexible, can be by group or not according to the group series, parallel between laser instrument, or go here and there and mix connection, can be also one of them or several laser instrument be driven separately by power supply separately, with the variation of the intensity that realizes output beam, wavelength, color etc.
Two-dimentional compact arranged collimated light beam through above step shaping obtains can further be coupled in optical fiber by focus lamp, realizes optical fiber output.Show as Fig. 5, focus lamp 12 and two-dimentional solid matter light beam 5.2 are coaxial, and optical fiber 13 is placed on the focal plane of focus lamp 12, and the numerical aperture of focus lamp and the numerical aperture of optical fiber are complementary, and focus spot can obtain high-quality coupling fiber less than fiber cores.
The shaping scheme of this kind semiconductor laser array, total is simple and clear, and making step is clear, and various lasers can be grouped together easily and flexibly.The laser application that is particularly useful for the free space outputs such as laser display, illumination.
Description of drawings
One group of consisting of of Fig. 1, multiple semiconductor laser devices, laser instrument is arranged in delegation, and light beam is through collimating mirror, the shaping of first reflection mirror.
Fig. 2, organize laser array altogether through catoptron shaping for the second time more.
Fig. 3, the laser instrument first reflection shaping of interior different wave length on the same group realize the coaxial bundle that closes by double color plate.
Fig. 4, the wavelength of laser instrument is different on the same group, reflects for the second time shaping, realizes the coaxial bundle that closes by double color plate.
Fig. 5, be coupled in optical fiber through the two-dimentional solid matter light beam scioptics of two secondary reflection shapings.
Fig. 6, embodiment, the light beam of one group of laser instrument is through first reflection and reflection for the second time.
Fig. 7, embodiment, two groups of laser array are fitted together, and two groups of light beams are exported side by side.
Fig. 8, embodiment, two groups of laser wavelengths are different, realize two groups of coaxial bundles that close of light beam by the double color plate of upper set.
Embodiment
As shown in Figure 6, the laser instrument 1.1 of one group of six TO encapsulation equidistantly is arranged on the sidewall of base plate 8, guarantees that shell and the base plate of TO pipe has good thermo-contact, and base plate 8 is become by high thermal conductivity metal-mades such as copper, aluminium, on open a rectangular opening 11, light beam can be in the vertical base plate direction by 11.Two through holes 10 are arranged on diagonal, be used for installing fixing.
Laser instrument adopts and is connected in series.At laser instrument 1.1 the place aheads placement collimation lenses 2, use five dimension adjusting gears to adjust collimation lenses 2 and make the light beam that sends from 6 laser instruments collimate respectively, be parallel to each other and equidistantly, form collimated light beam 3.Use far-field spot calibration collimation and direction in adjustment process.The collimation lens 2 of adjusting sticks with glue and is connected on base plate 8.
Place each self-corresponding catoptron 4.1 in the place ahead of collimated light beam 3, use four-dimensional adjusting gear to adjust catoptron 4.1, direction of beam propagation is turned back 90 °, and guarantee that six light beams are parallel to each other and at grade, while is compression light beam distance each other as far as possible, forms the solid matter linear array collimated light beam of collimate in parallel light beam.Pass through to observe arrangement and the direction of far-field spot calibration beam in adjustment process.The catoptron 4.1 of adjusting sticks with glue and is connected on base plate 8.
It is that on the triangle mirror unit 7 of 45 °, the length of mirror unit 7 is placed on base plate 8 greater than the width of perforate 11 that the second catoptron 4.2 is attached to an oblique angle, adjusts the position of mirror unit 7, makes linear solid matter collimated light beam upwards reflect 90 °.
By above-mentioned steps, can produce many group laser instruments, only mirror unit is arranged on position on through hole 11 along the length of direction of beam propagation slow astern successively.With two overlapping being installed together of base plate 8 of mounted two groups of laser instruments as shown in Figure 6, fixing by through hole 10, can form the array of a 2X6 laser instrument.Due to upper and lower two mirror units 7 distance that staggers on the beam Propagation direction, the light beam of below shines vertically upward by the through hole 11 of top base, and the secondary reflection light close-packed arrays of one group of top, closes Shu Chengwei 5.2, as shown in Figure 7.
According to such method, the overlapping many group laser instruments of laying that can continue to make progress form a larger two-dimensional array, obtain larger power, organize laser instrument more and fit together by mounting hole 10.
If the laser instrument 1.1r of following a group is different with the optical wavelength that the laser instrument 1.1g of top a group sends, can be according to foregoing method, as shown in Figure 8, the catoptron of top one group 4.2 is replaced by a dichroic mirror 9.a, mirror unit 7 is replaced by two short microscope bases 7.1, be bonded at respectively the both sides of dichroic mirror 9.a, to abdicate the dichroic mirror center section.Microscope base 7.1 is fixed on base plate.The through hole 11 of the light of lower floor by the upper strata base plate penetrates vertically upward, by dichroic mirror 9.a, and the coaxial Shu Chengwei 5.2rg that closes of light beam of the top one group of laser instrument that reflects with the mirror dichroic mirror.If the laser instrument of more groups of different wave lengths is arranged, can go out larger array according to this kind Combination of Methods.
This array mode can connect respectively power supply to upper and lower two groups of laser instruments and control, and watt level, the ratio of two kinds of wavelength light of light of closing bundle is arbitrarily changed, if the visible light of two kinds of different wave lengths just can be realized the continuous variation of color.
If a condenser lens and optical fiber are installed closing on the direction of propagation of Shu Guang again, can be further obtained the beam combination of exporting by optical fiber.Using the largest benefit of optical fiber output is exactly its superpower use dirigibility.
Claims (7)
1. the array beam shaping of semiconductor laser structure, be made of multiple semiconductor laser devices, collimation lens and catoptron, it is characterized by:
Multiple semiconductor laser devices is arranged in the multirow array format with behavior unit, and the light beam of each laser instrument collimates by collimation lens separately;
With group of each behavior, laser instrument in each group is coplanar through the light beam of collimation, and respectively by the mirror reflects of a correspondence, light beam after reflection is parallel to each other, the adjacent catoptron distance that staggers on optical transmission direction, each catoptron does not block other light beams, and this distance makes the spacing of adjacent beams be compressed to minimum, forms a compact arranged combination collimated light beam of one-dimensional linear;
The compact arranged combination collimated light beam of each group one-dimensional linear reflects for the second time by a catoptron separately, make respectively organize between the compact arranged combination collimated light beam of one-dimensional linear parallel to each other, the adjacent catoptron distance that staggers on optical transmission direction, each catoptron does not block other light beams, and this distance makes the spacing between the compact arranged combination collimated light beam of the one-dimensional linear of adjacent sets be compressed to minimum, is built up two-dimentional compact arranged collimated light beam output.
2. array beam shaping of semiconductor laser structure according to claim 1 is characterized by: collimation lens can be one to the simple lens fast, that slow-axis direction collimates simultaneously, can be also to the lens combination fast, that slow-axis direction collimates respectively; Lens can be GRIN Lens, spherical lens, non-spherical lens.
3. array beam shaping of semiconductor laser structure according to claim 1, it is characterized by: in array, the number of lasers of every delegation can be identical, also can be different.
4. array beam shaping of semiconductor laser structure according to claim 1 is characterized by: the output power of each semiconductor laser, wavelength, packing forms can be identical, also can be different.
5. array beam shaping of semiconductor laser structure according to claim 4, it is characterized by: if the corresponding light beam wavelength of two adjacent catoptrons is different, forward catoptron can change a dichroic mirror on the beam Propagation direction, and dichroic mirror and lean on after catoptron between need not stagger on optical transmission direction, by the light transmission dichroic mirror of back mirror reflection, with the coaxial bundle that closes of light of dichroic mirror reflection; The light of dichroic mirror reflection and the light that reflects by back mirror can only comprise a wavelength respectively, also can comprise a plurality of wavelength.
6. array beam shaping of semiconductor laser structure according to claim 1, it is characterized by: the connected mode of the power drives between each laser instrument can be series, parallel or go here and there and mix connection, and can be also one of them or several laser instrument be driven separately by power supply separately.
7. the described array beam shaping of semiconductor laser structure of arbitrary claim according to claim 1 to 6 is characterized by: the two-dimentional compact arranged collimated light beam by shaping obtains, can further be coupled in optical fiber by focus lamp.
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- 2012-12-13 CN CN 201220685959 patent/CN202995141U/en not_active Expired - Lifetime
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