CN109713567A - More single tube multi-wavelength wavelength coupling modules of single-tube semiconductor laser - Google Patents

More single tube multi-wavelength wavelength coupling modules of single-tube semiconductor laser Download PDF

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Publication number
CN109713567A
CN109713567A CN201711010522.XA CN201711010522A CN109713567A CN 109713567 A CN109713567 A CN 109713567A CN 201711010522 A CN201711010522 A CN 201711010522A CN 109713567 A CN109713567 A CN 109713567A
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laser
tube
tube semiconductor
semiconductor laser
wavelength
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刘翠翠
王鑫
王翠鸾
刘素平
马骁宇
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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Abstract

A kind of more single tube multi-wavelengths conjunction beam module of semiconductor laser, it include: four groups of single-tube semiconductor lasers and optical lens mould group, each group of single-tube semiconductor laser, including X single-tube semiconductor laser, optical lens mould group includes: beam shaping lens, includes fast axle beam shaping lens and slow axis beam shaping lens, wavelength coupling mirror, focus lens group and reflecting mirror.Laser anaberration that multiple single-tube semiconductor lasers emit and focusing can be obtained one at tail optical fiber incident end face and be less than fibre diameter length by focus lens groupFocal beam spot, and from tail optical fiber output end output beam.

Description

More single tube multi-wavelength wavelength coupling modules of single-tube semiconductor laser
Technical field
The invention patent relates to field of semiconductor lasers, in particular to a kind of multi-wavelength of single-tube semiconductor laser, More single tube laser combined beam light fibre coupled mode groups.
Background technique
Single-tube semiconductor laser is by its perfect heat-dissipating, service life length, nothing " smile " effect, electro-optical efficiency height etc. Advantage gradually becomes new " favorite " of laser, become for optical fiber laser, solid state laser provide pumping source it is only it Choosing.But since single single-tube semiconductor laser light power is low, beam quality is poor, application range is restricted greatly, and is swashed Combiner technology is to improve the important means of single tube module.It includes: sky that common single-tube semiconductor laser, which swashs combiner technology, Between close beam, wavelength coupling, polarization coupling.Swashing combiner technology can be improved the light out of single-tube semiconductor laser fiber coupling module Power and optical power density.With the progress of beam shaping technology, simple lens can be used and complete the diverging of light beam fast and slow axis The compression at angle collimates, and also lays a good foundation to swash the progress of combiner technique.Optimize more single-tube semiconductor laser laser The light beam of achievable beam shaping simultaneously, multiple single-tube semiconductor lasers is closed beam, and is coupled into small by the structure for closing beam module Fiber coupling mould group within core optical fibers, can obtain high power, high brightness beam output, advantageously reduce industrial production at This, greatly widens the application range of single-tube semiconductor laser.
Summary of the invention
In view of existing scheme there are the problem of, in order to overcome the shortcomings of that current technical solution, the invention patent propose one The fiber coupling device of the kind more single-tube semiconductor lasers of four wavelength.
The one aspect of patent according to the present invention, the more single tube multi-wavelengths for providing a kind of semiconductor laser close Shu Mo Block, comprising: four groups of single-tube semiconductor lasers, comprising: first group of single-tube semiconductor laser, including X the first single tubes are partly led Body laser, the first single-tube semiconductor laser emit the first laser of first wave length;Second group of single-tube semiconductor laser, packet X the second single-tube semiconductor lasers are included, the second single-tube semiconductor laser emits the second laser of second wave length;Third group list Pipe semiconductor laser, including X third single-tube semiconductor laser, third single-tube semiconductor laser emit third wavelength Third laser;And the 4th group of single-tube semiconductor laser, including X the 4th single-tube semiconductor lasers, the 4th single tube partly lead Body laser emits the 4th laser of the 4th wavelength;Wherein X is positive integer;Optical lens mould group, comprising: fast axle beam shaping is saturating Mirror, the light far-field divergence angle in single-tube semiconductor laser beam fast axis direction is compressed, and slow axis beam shaping lens will be single The light far-field divergence angle of pipe semiconductor laser slow-axis direction is compressed;First wave length light combination mirror, by the X first lasers Corresponding conjunction beam is that X dual wavelength closes Shu Jiguang respectively to the X second lasers;Second wave length light combination mirror, by X described first Corresponding conjunction beam is X three wavelength coupling laser to wavelength coupling laser respectively to the X third laser;Third wavelength coupling mirror, By the X three wavelength couplings laser, corresponding conjunction beam is X four wavelength coupling laser respectively to X the 4th laser;And X wavelength coupling laser is focused, obtains a focal beam spot by focus lens group.
Optionally, in each group of single-tube semiconductor laser, single-tube semiconductor laser is successively in ladder setting, adjacent list The difference in height of pipe semiconductor laser is equal.
Optionally, in each group of single-tube semiconductor laser, the corresponding reflecting mirror of each single-tube semiconductor laser is used for By first, second, third or the 4th laser reflection to respective wavelength light combination mirror, corresponding one group of single-tube semiconductor laser Reflecting mirror is accordingly in parallel step setting, and the difference in height of adjacent mirror and the difference in height of adjacent step are equal.
Optionally, corresponding single-tube semiconductor laser height is identical in each group single-tube semiconductor laser, accordingly Higher mirror it is identical.
Optionally, wavelength coupling module further includes heat dispersion heat sink, and the first ladder pedestal unit is provided on heat dispersion heat sink, Including X step, the X the first single-tube semiconductor lasers are respectively set on the X step;Second ladder pedestal unit, Including X step, the X the second single-tube semiconductor lasers are respectively set on the X step;Third ladder pedestal unit, Including X step, the X third single-tube semiconductor laser is respectively set on the X step;And fourth order ladder pedestal list The X the 4th single-tube semiconductor lasers are respectively set on the X step for member, including X step.
Optionally, wavelength coupling module further include: the first reflecting mirror fixed step, including X step, on the X step The X corresponding X reflecting mirrors of the first single-tube semiconductor laser are respectively set;Second reflecting mirror fixed step, including X platform The X corresponding X reflecting mirrors of the second single-tube semiconductor laser are respectively set on the X step for rank;Third reflecting mirror Fixed-order The corresponding X reflecting mirror of X third single-tube semiconductor laser is respectively set on the X step in ladder, including X step;With And X the 4th single-tube semiconductor lasers are respectively set on the X step in the 4th reflecting mirror fixed step, including X step Corresponding X reflecting mirror.
Optionally, a pair of of shaping lens are set on each single-tube semiconductor laser light direction, comprising: fast axle shaping is saturating Mirror, for compressing the angle of divergence of laser fast axis direction;And slow axis shaping lens, for compressing the diverging of laser slow-axis direction Angle.
Optionally, a first wave length light combination mirror is respectively set on the light direction of second laser, only allows first wave length Laser passes through, and a second wave length light combination mirror is respectively set on third Laser output direction, only allows the laser of the first and second wavelength logical It crosses, a third wavelength coupling mirror is respectively set on the 4th Laser output direction, the laser of the first, second and third wavelength is only allowed to pass through
Optionally, the focus lens group carries out anaberration and focusing to X four wavelength coupling laser.
Optionally, wavelength coupling module a further include: optical fiber, the four wavelength couplings laser enter the input of the optical fiber End, and exported from the output end of the optical fiber.
It can be seen from the above technical proposal that the invention patent has the advantages that
The output beam of four groups of single-tube semiconductor lasers is carried out closing beam and be coupled, four wavelength, high power and height are obtained The laser of power density exports;
Parallel step setting is respectively adopted in multiple groups single-tube semiconductor laser, cooperates reflecting mirror, reduces the body of device entirety Product;
Corresponding a pair of of the shaping lens of each single-tube semiconductor laser, compress the angle of divergence of laser.
Detailed description of the invention
Fig. 1 is the structural representation of the wavelength coupling coupling module of single-tube semiconductor laser in one embodiment of the invention patent Figure;
Fig. 2 is the more single tubes of single-tube semiconductor laser in one embodiment of the invention patent, multi-wavelength fiber coupling module Light channel structure schematic diagram.
Specific embodiment
The invention patent some embodiments will be done referring to appended attached drawing in rear and more comprehensively describe to property, some of but simultaneously Not all embodiment will be shown.In fact, the various embodiments of the invention patent can be realized in many different forms, without It should be construed as limited to embodiments set forth herein;Relatively, it theses embodiments are provided so that the invention patent meets to be applicable in Legal requirement.
In the present specification, following various embodiments for describing the invention patent principle only illustrate, should not be with Any mode is construed to the range of limitation the invention patent.Described below referring to attached drawing is used to help comprehensive understanding and is wanted by right Ask and its equivalent limit the invention patent exemplary embodiment.Described below includes a variety of details to help to manage Solution, but these details are considered as being only exemplary.Therefore, it will be appreciated by those of ordinary skill in the art that not departing from this In the case where the scope and spirit of patent of invention, embodiment described herein can be made various changes and modifications.In addition, For clarity and brevity, the description of known function and structure is omitted.In addition, running through attached drawing, same reference numerals are used for Identity function and operation.
For the purposes, technical schemes and advantages of the invention patent are more clearly understood, below in conjunction with specific embodiment, and Referring to attached drawing, the invention patent is further described.
More single tube multi-wavelengths that one embodiment of the invention patent provides a kind of semiconductor laser close beam module, including four groups Single-tube semiconductor laser and optical lens mould group.
First single-tube semiconductor laser includes X the first single-tube semiconductor lasers, the first single-tube semiconductor laser Emit the first laser of first wave length;Second single-tube semiconductor laser includes X the second single-tube semiconductor lasers, and second is single The second laser of pipe semiconductor laser second wave length;Third single-tube semiconductor laser includes that X third single tube is partly led Body laser, third single-tube semiconductor laser emit the third laser of third wavelength;4th single-tube semiconductor laser includes X A 4th single-tube semiconductor laser, the 4th single-tube semiconductor laser emit the 4th laser of the 4th wavelength;Wherein X is positive whole Number.
Optical lens mould group includes fast axle beam shaping lens, slow axis beam shaping lens, wavelength coupling mirror and focuses saturating Microscope group, it is that X dual wavelength closes Shu Jiguang that the X first lasers and X second laser are closed beam by first wave length light combination mirror respectively; Second wave length light combination mirror, it is X three wavelength that the X third laser and above-mentioned X first wave length, which are closed Shu Jiguang to close beam respectively, Close Shu Jiguang;By X the 4th laser, corresponding conjunction beam is third wavelength coupling mirror respectively to above-mentioned X three wavelength coupling laser X four wavelength coupling laser;Focus lens group is by X four wavelength coupling laser anaberrations and focuses.
Fig. 1 is the structural schematic diagram of the wavelength coupling module of single-tube semiconductor laser in one embodiment of the invention patent, Wavelength coupling module in Fig. 1 is by taking X=10 as an example.As shown in Figure 1, wavelength coupling module 100 includes heat dispersion heat sink 1, it is described to dissipate It is provided with ladder pedestal unit 2 in heat heat sink 1 to be separately positioned on tetra- regions a, b, c, d, respectively the first ladder pedestal list First 21, second ladder pedestal list 22, third ladder pedestal unit 23 and fourth order ladder pedestal unit 24, ladder pedestal unit 2 with Heat dispersion heat sink 1 can be separate structure, can also be integrally formed with heat dispersion heat sink 1, that is to say, that four ladder pedestal units can To be a part of heat dispersion heat sink 1, four ladder pedestal units are symmetrical arranged on heat dispersion heat sink 1.
Four groups of single-tube semiconductor lasers 4 are fixed to four ladder pedestals using the mode that metal or alloy solder welds On unit, the X transmitting respective wavelength is respectively set on the X step in each ladder pedestal unit, including X step Single-tube semiconductor laser 4.Each ladder pedestal unit 2 is corresponding with a reflecting mirror fixed step 9.
The first ladder pedestal unit 21 in the area a includes X step, and the difference in height of adjacent step is fixed value, X step by From left to right successively increases from right to left, and one first single-tube semiconductor laser 41 is arranged on each step, and the first single tube is partly led First laser of the body laser along direction A transmitting first wave length;
The second ladder pedestal unit 22 in the area b also includes X step, with X step of the first ladder pedestal unit Height corresponds, and one second single-tube semiconductor laser 42, the second single-tube semiconductor laser edge side are arranged on each step To the second laser of A transmitting second wave length;
First ladder pedestal unit 21 places the first reflecting mirror fixed step 91, including X step in the direction A critical part, It is arranged in a one-to-one correspondence with the height of X step of the first ladder pedestal unit, a reflecting mirror 81, reflecting mirror is set on each step 81 for reflexing to direction C for the first laser that corresponding first single-tube semiconductor laser 41 emits, and another reflecting mirror 85 is used Direction A is reflexed to again in the first laser for emitting corresponding first single-tube semiconductor laser 41, and the direction C is vertical with the direction A.
Second ladder pedestal unit 22 places the second reflecting mirror fixed step 92, including X step in the direction A critical part, It is arranged in a one-to-one correspondence with the height of X step of the second ladder pedestal unit, a reflecting mirror 82, reflecting mirror is set on each step 82 for reflexing to direction D for the second laser that corresponding second single-tube semiconductor laser 42 emits.After reflecting mirror reflects X first laser and X second laser it is arranged in parallel in the direction perpendicular to 1 plane of heat dispersion heat sink, and X first laser It is corresponded with X second laser in the position in the direction perpendicular to 1 plane of heat dispersion heat sink.
The third ladder pedestal unit 23 in the area c includes X step, and the difference in height of adjacent step is fixed value, X step by From left to right successively increases from right to left, and a third single-tube semiconductor laser 43 is arranged on each step, and third single tube is partly led Third laser of the body laser along the direction B transmitting third wavelength;
The fourth order ladder pedestal unit 24 in the area d also includes X step, the X step with third ladder pedestal unit 23 Height correspond, one the 4th single-tube semiconductor laser 44, the 4th single-tube semiconductor laser 44 are set on each step Emit the 4th laser of the 4th wavelength along the direction B;
The height of X step of the ladder pedestal unit in the area a, b, c, d can correspond.
Third ladder pedestal unit 23 places third reflecting mirror fixed step 93, including X step in the direction B critical part, It is arranged in a one-to-one correspondence with the height of X step of third ladder pedestal unit, a reflecting mirror 83, reflecting mirror is set on each step 83 for the third laser reflections that emit corresponding third single-tube semiconductor laser 43 to direction C.
Fourth order ladder pedestal unit 24 places the 4th reflecting mirror fixed step 94, including X step in the direction B critical part, It is arranged in a one-to-one correspondence with the height of X step of fourth order ladder pedestal unit 24, a reflecting mirror 84 is set on each step, reflected Mirror 84 is used for the 4th laser reflection that emits corresponding 4th single-tube semiconductor laser 44 to direction D.It is reflected through reflecting mirror X third laser and X the 4th laser afterwards is arranged in parallel in the direction perpendicular to 1 plane of heat dispersion heat sink, and X first is swashed Light, X second laser, X third laser, X the 4th laser are a pair of in the position one in the direction perpendicular to 1 plane of heat dispersion heat sink It answers.
Optical lens mould group includes fast axle beam shaping lens 5, slow axis beam shaping lens 7, wavelength coupling mirror 10, focuses Lens group 11 and above-mentioned reflecting mirror 8.
101 surface of wavelength coupling mirror is coated with the highly transmissive film of first laser and the highly reflecting films of second laser;Wavelength closes 102 surface of beam mirror is coated with the highly transmissive film of first laser and second laser and the highly reflecting films of third laser;Wavelength coupling mirror 103 surfaces are coated with the highly transmissive film of first laser, second laser and third laser and the highly reflecting films of the 4th laser.
The X first laser after the reflection of reflecting mirror 81,85 and the X second laser by the reflection of reflecting mirror 82 are by double Close beam after wavelength coupling mirror 101 and be that X dual wavelength closes Shu Jiguang, then with the X third laser after reflecting mirror 83 reflects Closing beam by second wave length light combination mirror 102 is X three wavelength coupling laser, then is swashed with X the 4th by the reflection of reflecting mirror 84 Light is X four wavelength coupling laser by closing beam after third wavelength coupling mirror 103.Fig. 2 illustrates the first single tube semiconductor and swashs Light device group LD1, the second single-tube semiconductor laser group LD2, third single-tube semiconductor laser group LD3, the 4th single tube semiconductor 4X laser of laser group LD4 outgoing is combined into the process of X four wavelength coupling laser.
X four wavelength coupling laser are focused and form one in fiber end face by focus lens group 11 is less than 12 diameter of optical fiber LengthFocal beam spot, focus lens group 11 may include one or more optical lens, and it acts as eliminate four wavelength The aberration of Shu Jiguang is closed, while it is focused.The focusing that other quantity or type can be used in other embodiments is saturating Mirror or focus lens group.
A branch of four wavelength laser after focusing impinges perpendicularly on optical fiber along the direction of the incident end face centre normal of optical fiber 12 End face, can be completed fiber coupling technique, and export from the output end of the optical fiber 12, high coupling efficiency, height can be realized The output of output power, high brightness and multiwavelength laser light beam.
Optical lens mould group can also include to one-to-one fast, the slow axis beam shaping lens of single-tube semiconductor laser 5 and 7, it is arranged on the outbound course of corresponding single-tube semiconductor laser, fast axle beam shaping lens 5 can be consolidated in the present embodiment At laser light-emitting surface, rank corresponding in corresponding single-tube semiconductor laser is can be set in slow axis beam shaping lens 7 On the step of terraced pedestal unit, the effect of beam shaping lens is to issue the fast of laser to corresponding single-tube semiconductor laser respectively Axis direction and slow-axis direction carry out angle of divergence compression, ensure that each single-tube semiconductor laser issues laser and has lesser diverging Angle.
As shown in Figure 1, can also include multipair regular screw threads hole 3, screw-threaded counterbore 6 on heat dispersion heat sink 1, it to be used for fixed laser Device has 20 pairs of regular screw threads holes 3 and 20 pairs of screw-threaded counterbores 6 in the present embodiment.
It should be noted that in attached drawing or specification text, the implementation for not being painted or describing is affiliated technology Form known to a person of ordinary skill in the art, is not described in detail in field.In addition, the above-mentioned definition to each element and method is simultaneously It is not limited only to various specific structures, shape or the mode mentioned in embodiment, those of ordinary skill in the art can carry out letter to it It singly changes or replaces, such as:
It can provide the demonstration of the parameter comprising particular value herein, but these parameters are worth without definite equal to corresponding, but It can be similar to analog value in acceptable error margin or design constraint;
The direction term mentioned in embodiment, such as "upper", "lower", "front", "rear", "left", "right" "horizontal" " vertical " Deng being only the direction with reference to attached drawing, be not intended to limit the invention the protection scope of patent;
Embodiment can be mixed with each other and be arranged in pairs or groups using or with other embodiments mix and match based on the considerations of design and reliability It uses, i.e., the technical characteristic in different embodiments can freely form more embodiments.
Particular embodiments described above has carried out into one the purpose of the invention patent, technical scheme and beneficial effects Step is described in detail, it should be understood that the foregoing is merely the specific embodiments of the invention patent, are not limited to this hair Bright patent, all within the spirit and principle of the invention patent, any modification, equivalent substitution, improvement and etc. done should all include Within the scope of protection of the patent of the invention.

Claims (10)

1. a kind of more single tube multi-wavelengths of semiconductor laser close beam module, wherein include:
Four groups of single-tube semiconductor lasers, comprising:
First group of single-tube semiconductor laser, including X the first single-tube semiconductor lasers, the first single tube semiconductor laser The first laser of device transmitting first wave length;
Second group of single-tube semiconductor laser, including X the second single-tube semiconductor lasers, the second single tube semiconductor laser The second laser of device transmitting second wave length;
Third group single-tube semiconductor laser, including X third single-tube semiconductor laser, the third single tube semiconductor laser The third laser of device transmitting third wavelength;And
4th group of single-tube semiconductor laser, including X the 4th single-tube semiconductor lasers, the 4th single tube semiconductor laser Device emits the 4th laser of the 4th wavelength;
Wherein X is the positive integer more than or equal to 2;
Optical lens mould group, comprising:
Fast axle shaping lens, for compressing the angle of divergence of laser fast axis direction;And
Slow axis shaping lens, for compressing the angle of divergence of laser slow-axis direction;
First wave length light combination mirror, for corresponding conjunction beam to be X dual wavelength respectively to X second laser by the X first lasers Close Shu Jiguang;
Second wave length light combination mirror, for X first wave length to be closed Shu Jiguang, corresponding conjunction beam is X respectively to X third wavelength laser A three wavelength couplings laser;
Third wavelength coupling mirror, for X second wave length to be closed Shu Jiguang, corresponding conjunction beam is X respectively to X the 4th wavelength lasers A four wavelength couplings laser;And
Focus lens group, for by X wavelength coupling laser anaberration and focus obtain a hot spot.
2. conjunction beam module according to claim 1, wherein in each group of single-tube semiconductor laser, single tube semiconductor swashs Light device is successively in parallel step setting, and the difference in height of adjacent single-tube semiconductor laser is equal.
3. conjunction beam module according to claim 2, wherein in each group of single-tube semiconductor laser, each single tube is partly led Body laser corresponds to a reflecting mirror, for respectively by the first, second, third and fourth laser reflection to corresponding wavelength light combination mirror, The reflecting mirror of corresponding one group of single-tube semiconductor laser is accordingly in parallel step setting, and the specification of reflecting mirror is identical, adjacent The difference in height that reflecting mirror is placed is equal.
4. conjunction beam module according to claim 2, wherein the corresponding reflecting mirror of first group of X single-tube semiconductor laser Quantity makes it reflex to first wave length light combination mirror for (X+1) for changing the direction of propagation of first wave length laser.
5. conjunction beam module according to claim 3, wherein corresponding single tube half in each group single-tube semiconductor laser Conductor laser height is identical, and corresponding higher mirror is identical.
6. the conjunction beam module according to claim 3 or 5, wherein further include heat dispersion heat sink, be arranged on the heat dispersion heat sink Have:
First ladder pedestal unit, including X step are respectively used on the X step that the X the first single tube semiconductors are arranged Laser;
Second ladder pedestal unit, including X step are respectively used on the X step that the X the second single tube semiconductors are arranged Laser;
Third ladder pedestal unit, including X step are respectively used to that the X third single tube semiconductor is arranged on the X step Laser;And
Fourth order ladder pedestal unit, including X step are respectively used on the X step that the X the 4th single tube semiconductors are arranged Laser.
7. the conjunction beam module according to claim 3 or 5, wherein further include:
X the first single tube semiconductors are respectively set on the X step and swash for first reflecting mirror fixed step unit, including X step The corresponding X reflecting mirror of light device;
X the second single tube semiconductors are respectively set on the X step and swash for second reflecting mirror fixed step unit, including X step The corresponding X reflecting mirror of light device;
X third single tube semiconductor is respectively set on the X step and swashs for third reflecting mirror fixed step unit, including X step The corresponding X reflecting mirror of light device;And
X the 4th single tube semiconductors are respectively set on the X step and swash for 4th reflecting mirror fixed step unit, including X step The corresponding X reflecting mirror of light device.
8. conjunction beam module according to claim 1, wherein be arranged first on the second single-tube semiconductor laser light direction Wavelength coupling mirror, second wave length light combination mirror is arranged on third single-tube semiconductor laser light direction, and the 4th single tube semiconductor swashs 4th wavelength coupling mirror is set on light device light direction.
9. conjunction beam module according to claim 1, wherein the focus lens group is specifically used for:
The processing of carry out De-dispersion and focusing to X four wavelength coupling laser.
10. conjunction beam module according to claim 1, wherein further include:
One optical fiber, the four wavelength couplings laser enters the input terminal of the optical fiber, and exports from the output end of the optical fiber.
CN201711010522.XA 2017-10-25 2017-10-25 More single tube multi-wavelength wavelength coupling modules of single-tube semiconductor laser Pending CN109713567A (en)

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CN112886386A (en) * 2021-02-01 2021-06-01 武汉锐科光纤激光技术股份有限公司 Multi-wavelength semiconductor laser
CN112993743A (en) * 2021-05-10 2021-06-18 北京凯普林光电科技股份有限公司 Semiconductor laser module with double sealing
CN113178778A (en) * 2021-05-11 2021-07-27 北京凯普林光电科技股份有限公司 Semiconductor laser including more than two wavelengths
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