CN208368938U

CN208368938U - A kind of Q-switched laser of semiconductor laser pumping

Info

Publication number: CN208368938U
Application number: CN201821103708.XU
Authority: CN
Inventors: 张哨峰; 丁广雷; 朱志强; 张兰双
Original assignee: Fujian Haichuang Electronic Co Ltd
Current assignee: Fujian Haichuang Photoelectric Technology Co.,Ltd.
Priority date: 2018-07-12
Filing date: 2018-07-12
Publication date: 2019-01-11
Anticipated expiration: 2028-07-12

Abstract

The utility model discloses a kind of Q-switched lasers of semiconductor laser pumping, it includes the semiconductor pumping sources being set in sequence, coupled system, first hysteroscope, adjusting Q crystal, gain media, cooling fin and the second hysteroscope, the pump light of semiconductor pumping sources transmitting passes through coupled system, enter gain media from adjusting Q crystal end face, by the first hysteroscope, adjusting Q crystal, gain media, pulsed laser action output is formd in the laser cavity of cooling fin and the second hysteroscope composition, the oscillation chamber of the utility model is using gain media in intermediate sandwiched type structure, the integration of discrete parts is realized by optical cement technique, improve the heat dissipation performance of the end face of gain media, to obtain higher laser power output.

Description

A kind of Q-switched laser of semiconductor laser pumping

Technical field

The utility model relates to laser technology device field, especially a kind of Q-switched laser of semiconductor laser pumping.

Background technique

Due to its all solid state, high reliablity, the advantages that high-efficient and service life is long, obtains semiconductor pumped Q-switched pulse laser To being widely applied, the semiconductor pumped Q-switched pulse laser near the 1.5um wavelength of current eye safety in laser ranging and Application in terms of laser radar is developed rapidly, and the glass for generalling use er-doped adds the adjusting Q crystal for mixing cobalt to realize 1.5um Adjusting Q pulse laser output, but since gain media is usually the low material of thermal conductivity, especially its end-face heat sinking performance is very Difference causes the laser power of output limited.

Summary of the invention

In order to solve the deficiencies in the prior art, the purpose of this utility model is to provide a kind of end-face heat sinking function admirable, Design the Q-switched laser of reasonable semiconductor laser pumping.

In order to realize above-mentioned technical purpose, the technical solution adopted in the utility model are as follows:

A kind of Q-switched laser of semiconductor laser pumping comprising the semiconductor pumping sources that are set in sequence, coupled system, First hysteroscope, adjusting Q crystal, gain media, cooling fin and the second hysteroscope, the adjusting Q crystal, gain media, cooling fin are in order Optical cement is structure as a whole.

Further, the gain media is the glass or crystal of erbium and ytterbium codoping.

Further, first cavity mirror plating is equipped with anti-reflection film corresponding with pumping wavelength and relevant work wavelength Be all-trans film, and second cavity mirror plating is equipped with the part reflectance coating of relevant work wavelength.

Further, first hysteroscope is that direct plating is located on adjusting Q crystal and its similar end face, second chamber Mirror is that direct plating is located on cooling fin and its similar end face.

Further, the cooling fin is the crystal of high thermal conductivity, such as: sapphire or pure YAG.

Further, the coupled system is more than one lens composition, and the end face plating of the lens is equipped with and semiconductor Pumping source issues the anti-reflection film that the wavelength of pump light is adapted.

Using above-mentioned technical solution, the utility model compared with prior art, have the beneficial effect that by Two end face optical cement crystal of gain media avoid so that the end-face heat sinking performance of gain media greatly promotes due to heat dissipation The limited problem of output power caused by bad, to realize the laser output of higher power.

Detailed description of the invention

The utility model is further elaborated with reference to the accompanying drawings and detailed description:

Fig. 1 is the brief implementation structural schematic diagram of the Q-switched laser of the utility model semiconductor laser pumping.

Specific embodiment

As shown in Figure 1, the utility model includes the semiconductor pumping sources 101, coupled system 102, the first chamber being set in sequence Mirror 103, adjusting Q crystal 104, gain media 105, cooling fin 106 and the second hysteroscope 107, the adjusting Q crystal 104, gain media 105, optical cement is structure as a whole cooling fin 106 in order.

Wherein, the gain media 105 is the glass or crystal of erbium and ytterbium codoping；First hysteroscope 103 plating is equipped with The film that is all-trans of anti-reflection film corresponding with pumping wavelength and relevant work wavelength, the second hysteroscope 107 plating are equipped with corresponding The part reflectance coating of operation wavelength.

In addition, first hysteroscope 103 is that direct plating is located on adjusting Q crystal 104 and its similar end face, described the Two hysteroscopes 107 are that direct plating is located on cooling fin 106 and its similar end face.

Further, the cooling fin 106 is the crystal of high thermal conductivity, such as: sapphire or pure YAG.

Semiconductor pumping sources 101 emit pump light, by coupled system 102, wherein coupled system 102 be one or More than one lens is constituted, and end face is coated with the anti-reflection film that the wavelength of the pump light issued with semiconductor pumping sources 101 is adapted, Pump light after coupled system 102 couples passes through the first hysteroscope 103, then by entering gain media 105 after adjusting Q crystal 104, And it is absorbed by gain media 105.

After pump light is absorbed by gain media 105, the population of gain media 105 is inverted, and all gathers energy level And generate laser emission, adjusting Q crystal 104, gain media 105 together with 106 optical cement of cooling fin, initial laser emission all by Adjusting Q crystal 104 absorbs, after the absorption of adjusting Q crystal 104 reaches saturation, the quick downward energy level of the upper energy level particle of gain media 105 Transition forms laser generation in the laser cavity being made of the first hysteroscope 103 and the second hysteroscope 107, finally from the second hysteroscope 107 Output pulse laser.

The foregoing describe specific embodiment of the present utility model, it will be appreciated by those of skill in the art that this is only Be for example, those skilled in the art is under the premise of without departing substantially from the principles of the present invention and essence, can be to this reality The mode of applying makes various changes or modifications, but these change and modification each fall within the protection scope of the utility model.

Claims

1. a kind of Q-switched laser of semiconductor laser pumping, it is characterised in that: it include the semiconductor pumping sources being set in sequence, Coupled system, the first hysteroscope, adjusting Q crystal, gain media, cooling fin and the second hysteroscope, the adjusting Q crystal, gain media, heat dissipation Optical cement is structure as a whole piece in order.

2. a kind of Q-switched laser of semiconductor laser pumping according to claim 1, it is characterised in that: the gain Medium is the glass or crystal of erbium and ytterbium codoping.

3. a kind of Q-switched laser of semiconductor laser pumping according to claim 1, it is characterised in that: described first Cavity mirror plating is equipped with the film that is all-trans of anti-reflection film corresponding with pumping wavelength and relevant work wavelength, and second cavity mirror plating is set There is the part reflectance coating of relevant work wavelength.

4. a kind of Q-switched laser of semiconductor laser pumping according to claim 1, it is characterised in that: described first Hysteroscope is that direct plating is located on adjusting Q crystal and its similar end face, and second hysteroscope is that direct plating is located at cooling fin and its On similar end face.

5. a kind of Q-switched laser of semiconductor laser pumping according to claim 1, it is characterised in that: the cooling fin For sapphire or pure YAG.

6. a kind of Q-switched laser of semiconductor laser pumping according to claim 1, it is characterised in that: the coupling System is more than one lens composition, and the end face plating of the lens is equipped with the wavelength for issuing pump light with semiconductor pumping sources and mutually fits The anti-reflection film answered.