CN104051943A - A diode pumped passive mode-locked Nd, Y: caF2all-solid-state femtosecond laser - Google Patents
A diode pumped passive mode-locked Nd, Y: caF2all-solid-state femtosecond laser Download PDFInfo
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- CN104051943A CN104051943A CN201410315122.XA CN201410315122A CN104051943A CN 104051943 A CN104051943 A CN 104051943A CN 201410315122 A CN201410315122 A CN 201410315122A CN 104051943 A CN104051943 A CN 104051943A
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Abstract
The invention discloses an all-solid-state femtosecond laser of passive mode locking Nd,Y:CaF2 of diode pumping. An Nd,Y:CaF2 laser crystal of the laser receives pumping laser penetrating through an optical coupling focusing system and a dichroic mirror; a first concave mirror, a second concave mirror and the dichroic mirror form a compact type confocal folded cavity; a third concave mirror focuses gain laser in a resonant cavity to a semiconductor saturable absorber mirror; the semiconductor saturable absorber mirror is used for starting and maintaining stable mode locking; a first GTI mirror and a second GTI mirror are used for compensating for positive chromatic dispersion in the resonant cavity; a coupling output mirror is used for outputting a stable passive mode locking pulse sequence. The all-solid-state femtosecond laser formed in the mode that a pumping source based on a laser diode is obtained, CaF2 with Nd3+ and Y3+ co-doped serves as a gain medium, the GTI mirrors are used for compensating for chromatic dispersion and the semiconductor saturable absorber mirror is used for starting mode locking, and the stable mode locking pulse sequence with the pulse width of 264 fs is output inside the resonant cavity. A laser diode pumping technology is adopted, so that the all-solid-state femtosecond laser has broader application prospects.
Description
Technical field
The invention belongs to laser technology field, relate in particular to a kind of passive mode locking Nd of diode pumping, Y:CaF
2all solid state femto-second laser.
Background technology
That laser diode has is high-power, high brightness, advantage cheaply, is widely used in all solid state laser of pumping near infrared band.The all solid state femto-second laser of laser diode pump-coupling has become the main flow direction of all solid state femto-second laser research of current 1-2 mu m waveband.And adopt laser diode pump-coupling to be conducive to obtain High Power Femtosecond Laser output, make the application of all solid state femto-second laser more wide.
In the gain media of all solid state laser, doping Nd
3+the laser crystal of ion is one of current most widely used crystal.It has the advantages such as fluorescence lifetime is long, stimulated emission cross section is large.Up to now, there is hundreds of doping Nd
3+the laser crystal of ion has all obtained laser operation, to be applied to Nd:YAG and the commercial Nd:YVO of low-power of middle and high power
4the most extensive.But Nd adulterates merely
3+the laser medium fluorescent line of ion is narrower, does not support generation and the amplification of ultrashort femtosecond pulse, thus seldom application in femto-second laser, and great majority are all applied in picosecond laser and nanosecond Q-switched laser.With Nd:CaF
2crystal is example, along with Nd
3+the increase of ion doping concentration, can form high concentration cancellation center and be difficult to obtain Laser emission; In addition, Nd:CaF
2crystal is relatively little at 1.06 μ m place stimulated emission cross sections, large and energy conversion efficiency is low as its saturated energy-flux density of amplification medium.Based on above 2 points, Nd:CaF in the research producing at femtosecond laser
2crystal has been abandoned for a long time by people.
In recent years, the people Nd that successfully grown
3+and Y
3+the CaF mixing altogether
2crystal, it and Nd:CaF
2crystal is compared a lot of good optical characteristics.First mix, altogether effect and obviously suppressed Nd:CaF
2the high concentration quenching phenomenon of crystal itself, has improved fluorescence quantum efficiency, and therefore crystal also becomes level and smooth and concentrate at the emission spectrum at 1 μ m place, more easily supports the generation of ultrashort laser pulse.Secondly, Nd, Y:CaF
2the crystallofluorescence life-span is long, stimulated emission cross section is larger, is more suitable for the amplification medium as femtosecond laser.Finally, Nd, Y:CaF
2crystal has higher thermal conductivity, can grow into large scale, and is applicable to carrying out pump-coupling with the semiconductor diode laser of high power, high brightness.Based on above-mentioned all good characteristics, Nd, Y:CaF
2crystal needs to be become one of good medium producing ultrashort femto-second laser pulse.At present about Nd, Y:CaF
2the report of crystal only has two sections, and SuL.B. in 2013 etc. have reported Nd, Y:CaF
2crystal and Nd:CaF
2crystal is compared had superior physical characteristic and laser characteristics with Nd:Glass.(LaserPhys.Lett.10(3),035804-035808(2013))。QinZ.P. in 2014 etc. have reported and have utilized Nd, Y:CaF
2crystal has produced the ultrashort pulse of 103fs, but power output only has tens milliwatts (Opt.Lett.39 (7), 1737-1739 (2014)).
Summary of the invention
The object of the embodiment of the present invention is to provide a kind of passive mode locking Nd of diode pumping, Y:CaF
2all solid state femto-second laser, is intended to solve existing Nd, Y:CaF
2the problem that laser output power is less.
The embodiment of the present invention is achieved in that a kind of passive mode locking Nd of diode pumping, Y:CaF
2all solid state femto-second laser, the passive mode locking Nd of this diode pumping, Y:CaF
2all solid state femto-second laser comprises:
Pumping source, optical coupled focusing system, Nd, Y:CaF
2laser crystal, the first concave mirror, the second concave mirror and dichroic mirror, the 3rd concave mirror, semiconductor saturable absorbing mirror, a GTI mirror and the 2nd GTI mirror, output coupling mirror;
Pumping source, the pumping laser that output center wavelength is 788nm focuses on Nd by dichroic mirror again, Y:CaF after optical coupled focusing system is carried out spacing shaping
2on laser crystal, offer laser crystal energy;
Optical coupled focusing system, receives the pumping laser that pumping source is exported, and carries out spacing shaping and be coupled focusing on Nd, Y:CaF
2on laser crystal;
Nd, Y:CaF
2laser crystal, is placed on optical coupled and focuses on system and the public focus place of the first concave mirror and the second concave mirror, receives the pumping laser seeing through after optical coupled focusing system and dichroic mirror, thereby forms the laser gain in resonant cavity to realize population inversion;
The first concave mirror and the second concave mirror and dichroic mirror, the confocal refrative cavity of formation compact, receives the gain laser the each self-reflection that in resonant cavity, produce, because of optical coupled focusing system and Nd, Y:CaF
2distance between laser crystal is too short is not enough to put down the second concave mirror, therefore the existence of dichroic mirror is that the gain laser producing in resonant cavity is reflexed to the second concave mirror by dichroic mirror;
The 3rd concave mirror, receive the gain laser that reflects back from the first concave mirror and by its reflect focalization to semiconductor saturable absorbing mirror;
Semiconductor saturable absorbing mirror, receives the gain laser the Jiang Qianyuan road that reflect back from the 3rd concave mirror and returns, for starting and maintaining stable locked mode;
The one GTI mirror and the 2nd GTI mirror, receive the gain laser reflecting back from the second concave mirror, for the positive dispersion in compensation resonant cavity;
Output coupling mirror, receives the gain laser reflecting back successively from a GTI mirror and the 2nd GTI mirror, the passive mode locking pulse train of stable output when most of gain laser An Yuan road is returned.
Further, pumping source adopts the diode laser of coupling fiber output, and centre wavelength is 788nm, and the core diameter of coupled fiber is 200 μ m, and numerical aperture is 0.22.
Further, optical coupled focusing system is coated with the high saturating deielectric-coating of pumping laser.
Further, Nd, Y:CaF
2plane of crystal is plated film not, is placed in resonant cavity with Brewster's angle, is wrapped on red copper crystal presss from both sides interior and be placed on the copper billet that is connected with recirculated water with indium foil, and the temperature of setting recirculated water is 10 DEG C.
Further, the first concave mirror and the second concave mirror are all coated with the high inverse medium film of gain laser towards the one side in resonant cavity, and another side is coated with the high deielectric-coating thoroughly of pumping laser; Dichroic mirror is coated with the high inverse medium film of gain laser and the high deielectric-coating thoroughly of pumping laser towards the one side in resonant cavity, and another side is coated with the high deielectric-coating thoroughly of pumping laser.
Further, the 3rd concave mirror is coated with the high inverse medium film of gain laser towards the one side in resonant cavity, and another side is coated with the high deielectric-coating thoroughly of pumping laser.
Further, the modulation depth of semiconductor saturable absorbing mirror is 0.7%, and unsaturation loss is 0.4%, and be 500fs recovery time.
Further, a GTI mirror and the 2nd provide respectively-250fs of GTI mirror
2with-1200fs
22nd order chromatic dispersion amount.
Further, outgoing mirror is towards the deielectric-coating that to be coated with gain laser transmitance be 0.8% of the one side in resonant cavity, and another side is coated with the anti-reflection deielectric-coating of gain laser.
Further, the passive mode locking Nd of this diode pumping, Y:CaF
2all solid state femto-second laser output pulse width is 264fs, and average output power is 180mW.
The passive mode locking Nd of diode pumping provided by the invention, Y:CaF
2all solid state femto-second laser, is provided with pumping source, optical coupled focusing system, Nd, Y:CaF
2laser crystal, the first concave mirror, the second concave mirror and dichroic mirror, the 3rd concave mirror, semiconductor saturable absorbing mirror, a GTI mirror and the 2nd GTI mirror, output coupling mirror; The pumping laser of the 788nm being exported by pumping source carries out spacing shaping by optical coupled focusing system, then through being coated with, the high dichroic mirror of deielectric-coating thoroughly of pump light is focused on to Nd, Y:CaF
2on laser crystal, at Nd, Y:CaF
2on laser crystal, realize population inversion and form gain laser; After gain laser starting of oscillation, incide on the first concave mirror, reflex to the 3rd concave mirror by the first concave mirror again, and by the 3rd concave mirror reflect focalization to semiconductor saturable absorbing mirror, semiconductor saturable absorbing mirror starts on the one hand and maintains stable mode-locking, on the other hand gain laser being reflected to Bing Anyuan road returns, through the 3rd concave mirror, the first concave mirror and Nd, Y:CaF
2laser crystal arrives on dichroic mirror, the gain laser inciding on dichroic mirror is reflected to the second concave mirror, and by a GTI mirror, the 2nd GTI mirror reflexes to output coupling mirror successively, output coupling mirror has been exported mode locking pulse sequence when most of gain laser reflection Bing Anyuan road is returned.It is pumping source that the present invention has realized based on laser diode, Nd
3+and Y
3+the CaF mixing altogether
2crystal is gain media, utilizes GTI mirror compensation of dispersion and semiconductor saturable absorbing mirror (SESAM) to start all solid state femto-second laser of locked mode; The stable mode-locking pulse train that to have exported pulse duration in the resonant cavity that is 85MHz in repetition rate be 264fs, the spectral centroid wavelength that mode locking pulse is corresponding is 1063nm, full width at half maximum is 5.0nm.Laser provided by the invention has that production cost is low, compact conformation, pulse duration are narrow, stability advantages of higher, has good application prospect and commercial value.
Brief description of the drawings
Fig. 1 is the passive mode locking Nd of the diode pumping that provides of the embodiment of the present invention, Y:CaF
2the light path schematic diagram of all solid state femto-second laser;
Fig. 2 is the passive mode locking Nd of the diode pumping that provides of the embodiment of the present invention, Y:CaF
2the pulse width signal figure that utilizes intensity autocorrelation function analyzer to record of all solid state femto-second laser output;
Fig. 3 is the passive mode locking Nd of the diode pumping that provides of the embodiment of the present invention, Y:CaF
2the spectral width signal graph that utilizes spectrometer to record of all solid state femto-second laser output;
In figure: 1, pumping source; 2, optical coupled focusing system; 3, dichroic mirror; 4, Nd, Y:CaF
2crystal; 5, the first concave mirror; 6, the second concave mirror; 7, the 3rd concave mirror; 8, semiconductor saturable absorbing mirror; 9, a GTI mirror; 10, the 2nd GTI mirror; 11, output coupling mirror.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Below in conjunction with drawings and the specific embodiments, application principle of the present invention is further described.
As shown in Figure 1, the passive mode locking Nd of the diode pumping of the embodiment of the present invention, Y:CaF
2all solid state femto-second laser is mainly by pumping source 1, optical coupled focusing system 2, dichroic mirror 3, Nd, Y:CaF
2crystal 4, the first concave mirror 5, the second concave mirror 6, the 3rd concave mirror 7, semiconductor saturable absorbing mirror 8, a GTI mirror 9, the 2nd GTI mirror 10, output coupling mirror 11 form;
Pumping source 1, the embodiment of the present invention adopts the laser that model is GKD-30FMS, the optical fiber core diameter 200 μ m of coupling output, numerical aperture is 0.22, this laser is by regulating working temperature can change output wavelength, in order to mate better Nd, Y:CaF
2the absworption peak of crystal, and the steady operation of guarantee pumping source, the working temperature of setting pumping source is 25 DEG C, now the output wavelength of laser diode is 788nm;
Optical coupled focusing system 2, what the embodiment of the present invention adopted is that enlargement ratio is the optical coupling system of 1:0.8, under the pumping of above-mentioned laser diode, the focused radius of the pumping laser at this optical coupling system focus place is about 80 μ m, focusing length is 51mm, in order to regulate more accurately the distance between optical coupled focusing system 2 and gain crystal 4, optical coupled focusing system 2 is placed on optical translation platform;
Dichroic mirror 3, because of optical coupled focusing system 2 and Nd, Y:CaF
2distance between laser crystal 4 is too short is not enough to put down the second concave mirror 6, therefore put into dichroic mirror 3 in order to leaded light in laser cavity of the present invention, gain laser in resonant cavity reflexes to the second concave mirror 6 through dichroic mirror 3, the dichroic mirror 3 of selecting in the embodiment of the present invention is coated with to the high deielectric-coating thoroughly of 808-980nm light with to the high inverse medium film of 1020-1200nm light towards the one side in resonant cavity, and another side is coated with the high deielectric-coating thoroughly of 800-1000nm light;
Nd, Y:CaF
2laser crystal 4, crystal is of a size of 3*3*6mm
3, doping content is 0.5%Nd
3+and 10%Y
3+logical light length is 6mm, be placed in resonant cavity with Brewster's angle, with indium foil be wrapped in red copper crystal folder and be placed on the copper billet that is connected with recirculated water, carry out cooling, the Temperature Setting of recirculated water is at 10 DEG C, in order to regulate more accurately the distance between gain crystal 4 and coupled system 2 and the first concave mirror 5, by Nd, Y:CaF
2gain crystal 4 is placed on optical translation platform;
The first concave mirror 5 and the second concave mirror 6, form the confocal refrative cavity of compact together with dichroic mirror 3, consider gain laser and the pumping laser matching degree on crystal and two factors of pulse duration of output, what select in embodiments of the present invention is that radius of curvature is the concave mirror of 200mm, two concave mirrors are all coated with the high inverse medium film of 1020-1200nm light towards the one side in resonant cavity, another side is coated with the high deielectric-coating thoroughly of 800-1000nm light, in order to regulate more accurately the distance between the first concave mirror 5 and gain crystal 4, the first concave mirror 5 is placed on optical translation platform,
The 3rd concave mirror 7, for gain laser is focused on to semiconductor saturable absorbing mirror 8, more easily to obtain continuous locking mold, consider the damage threshold of semiconductor saturable absorbing mirror 8, what the embodiment of the present invention adopted is that radius of curvature is the concave mirror of 300mm, wherein be coated with the high inverse medium film of 1020-1200nm light towards the one side in resonant cavity, another side is coated with the high deielectric-coating thoroughly of 800-1000nm light;
Semiconductor saturable absorbing mirror 8 (SESAM), its modulation depth is 0.7%, unsaturation loss is 0.4%, be 500fs recovery time, in the resonant cavity of the embodiment of the present invention, put into this semiconductor saturable absorbing mirror, once locked mode starts i.e. steady running for a long time, in order to regulate more accurately the distance between semiconductor saturable absorbing mirror 8 and the 3rd concave mirror 7, semiconductor saturable absorbing mirror 8 is placed on optical translation platform;
The one GTI mirror 9 and the 2nd GTI mirror 10, for the positive dispersion that in compensation resonant cavity, air, gain crystal 4, semiconductor saturable absorbing mirror 8 and each optical element are introduced, wherein a provide-250fs of GTI mirror 9
22nd order chromatic dispersion amount, the 2nd provide-1200fs of GTI mirror 10
22nd order chromatic dispersion amount;
Output coupling mirror 11, outgoing mirror is towards the deielectric-coating that to be coated with 1040 ± 50nm light transmission rate be 0.8% of the one side in resonant cavity, and another side is coated with the anti-reflection deielectric-coating of 1040 ± 80nm light.
Operation principle below in conjunction with the brief description of the drawings embodiment of the present invention: the pumping laser of the 788nm being exported by pumping source carries out spacing shaping by optical coupled focusing system, then through being coated with, the high dichroic mirror of deielectric-coating thoroughly of pump light is focused on to Nd, Y:CaF
2on laser crystal, at Nd, Y:CaF
2on laser crystal, realize population inversion and form gain laser; After gain laser starting of oscillation, incide on the first concave mirror, reflex to the 3rd concave mirror by the first concave mirror again, and by the 3rd concave mirror reflect focalization to semiconductor saturable absorbing mirror, semiconductor saturable absorbing mirror starts on the one hand and maintains stable mode-locking, on the other hand gain laser being reflected to Bing Anyuan road returns, through the 3rd concave mirror, the first concave mirror and Nd, Y:CaF
2laser crystal arrives on dichroic mirror, the gain laser inciding on dichroic mirror is reflected to the second concave mirror, and by a GTI mirror, the 2nd GTI mirror reflexes to output coupling mirror successively, output coupling mirror has been exported mode locking pulse sequence when most of gain laser reflection Bing Anyuan road is returned, thus, oscillating laser is vibration back and forth between two end mirrors (semiconductor saturable absorbing mirror and output coupling mirror) in chamber, forms continuous stable mode-locking.
As shown in Figures 2 and 3, the long 1.76m of laser chamber provided by the invention, repetition rate 85MHz, can export the steady and continuous locked mode that high-average power is 180mW, under the prerequisite that is Hyperbolic Secant Shaped Optical in hypothesis pulse shape, utilizing the pulse duration that autocorrelation function analyzer records is 264fs, and it is that spectrum full width at half maximum corresponding to 1063nm place is 5.0nm that recycling spectrometer has recorded centre wavelength.
Laser provided by the invention utilizes high power, high brightness, diode pumping cheaply, adopt the confocal cavity type of compact conformation, utilize the GTI mirror compensation of dispersion of little loss, and utilize semiconductor saturable absorbing mirror to start and maintain stable mode-locking, power output is high, once start can long time running for locked mode, in a word, laser provided by the invention has that production cost is low, compact conformation, pulse duration are narrow, stability advantages of higher, has good application prospect and commercial value.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, are equal to replacement and improvement etc., within all should being included in protection scope of the present invention.
Claims (10)
1. a passive mode locking Nd for diode pumping, Y:CaF
2all solid state femto-second laser, is characterized in that, the passive mode locking Nd of this diode pumping, Y:CaF
2all solid state femto-second laser comprises:
Pumping source, optical coupled focusing system, Nd, Y:CaF
2laser crystal, the first concave mirror, the second concave mirror and dichroic mirror, the 3rd concave mirror, semiconductor saturable absorbing mirror, a GTI mirror and the 2nd GTI mirror, output coupling mirror;
Pumping source, the pumping laser that output center wavelength is 788nm sees through dichroic mirror again and focuses on Nd, Y:CaF after optical coupled focusing system is carried out spacing shaping
2on laser crystal, offer laser crystal energy;
Optical coupled focusing system, receives the pumping laser that pumping source is exported, and carries out spacing shaping and be coupled focusing on Nd, Y:CaF
2on laser crystal;
Nd, Y:CaF
2laser crystal, is placed on optical coupled and focuses on system and the public focus place of the first concave mirror and the second concave mirror, receives the pumping laser seeing through after optical coupled focusing system and dichroic mirror, thereby forms the laser gain in resonant cavity to realize population inversion;
The first concave mirror and the second concave mirror and dichroic mirror, the confocal refrative cavity of formation compact, receives the gain laser the each self-reflection that in resonant cavity, produce, and dichroic mirror is that the gain laser producing in resonant cavity is reflexed to the second concave mirror by dichroic mirror;
The 3rd concave mirror, receive the gain laser that reflects back from the first concave mirror and by its reflect focalization to semiconductor saturable absorbing mirror;
Semiconductor saturable absorbing mirror, receives the gain laser the Jiang Qianyuan road that reflect back from the 3rd concave mirror and returns, for starting and maintaining stable locked mode;
The one GTI mirror and the 2nd GTI mirror, receive the gain laser reflecting back from the second concave mirror, for the positive dispersion in compensation resonant cavity;
Output coupling mirror, receives the gain laser reflecting back successively from a GTI mirror and the 2nd GTI mirror, the passive mode locking pulse train of stable output when most of gain laser An Yuan road is returned.
2. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, pumping source adopts the diode laser of coupling fiber output, and centre wavelength is 788nm, and the core diameter of coupled fiber is 200 μ m, and numerical aperture is 0.22.
3. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, optical coupled focusing system is coated with the high saturating deielectric-coating of pumping laser.
4. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, Nd, Y:CaF
2not plated film of laser crystal surface, is placed in resonant cavity with Brewster's angle, is wrapped on red copper crystal presss from both sides interior and be placed on the copper billet that is connected with recirculated water with indium foil, and the temperature of setting recirculated water is 10 DEG C.
5. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, the first concave mirror and the second concave mirror are all coated with the high inverse medium film of gain laser towards the one side in resonant cavity, and another side is coated with the high deielectric-coating thoroughly of pumping laser; Dichroic mirror is coated with the high inverse medium film of gain laser and the high deielectric-coating thoroughly of pumping laser towards the one side in resonant cavity, and another side is coated with the high deielectric-coating thoroughly of pumping laser.
6. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, the 3rd concave mirror is coated with the high inverse medium film of gain laser towards the one side in resonant cavity, and another side is coated with the high deielectric-coating thoroughly of pumping laser.
7. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, the modulation depth of semiconductor saturable absorbing mirror is 0.7%, and unsaturation loss is 0.4%, and be 500fs recovery time.
8. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, a GTI mirror and the 2nd provide respectively-250fs of GTI mirror
2with-1200fs
22nd order chromatic dispersion amount.
9. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, outgoing mirror is towards the deielectric-coating that to be coated with gain laser transmitance be 0.8% of the one side in resonant cavity, and another side is coated with the anti-reflection deielectric-coating of gain laser.
10. the passive mode locking Nd of diode pumping as claimed in claim 1, Y:CaF
2all solid state femto-second laser, is characterized in that, the passive mode locking Nd of this diode pumping, Y:CaF
2all solid state femto-second laser output pulse width is 264fs, and average output power is 180mW.
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| CN201410315122.XA CN104051943A (en) | 2014-07-03 | 2014-07-03 | A diode pumped passive mode-locked Nd, Y: caF2all-solid-state femtosecond laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505706A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | YVO4 femtosecond laser device capable of emitting laser having wavelength around 1134 nm |
| CN104505705A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | All-solid self-Raman femtosecond laser device |
| CN104852275A (en) * | 2015-05-20 | 2015-08-19 | 西安电子科技大学 | Semiconductor saturable absorption mirror mode locking high-power Yb:YAG thin disk laser |
| CN107565358A (en) * | 2017-10-27 | 2018-01-09 | 西安电子科技大学 | A kind of high power kerr lenses self mode-locked laser of optical fiber laser pump |
| CN109861070A (en) * | 2019-03-15 | 2019-06-07 | 苏州贝亚敏光电科技有限公司 | A kind of generating device of laser |
| CN111740303A (en) * | 2020-07-30 | 2020-10-02 | 暨南大学 | Femtosecond mode-locked laser based on disordered laser crystal and laser generation method |
| CN113783088A (en) * | 2021-08-17 | 2021-12-10 | 西北大学 | Dispersion management type fiber laser based on GTI |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104505706A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | YVO4 femtosecond laser device capable of emitting laser having wavelength around 1134 nm |
| CN104505705A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | All-solid self-Raman femtosecond laser device |
| CN104505706B (en) * | 2014-11-19 | 2018-11-02 | 中国科学院光电研究院 | A kind of 1134nm wavelength Yb：YVO4 femto-second lasers |
| CN104505705B (en) * | 2014-11-19 | 2018-11-02 | 中国科学院光电研究院 | It is all solid state from Raman femto-second laser |
| CN104852275A (en) * | 2015-05-20 | 2015-08-19 | 西安电子科技大学 | Semiconductor saturable absorption mirror mode locking high-power Yb:YAG thin disk laser |
| CN104852275B (en) * | 2015-05-20 | 2018-04-24 | 西安电子科技大学 | A kind of high power Yb of semiconductor saturable absorber mirror mode-locking：YAG thin-sheet lasers |
| CN107565358A (en) * | 2017-10-27 | 2018-01-09 | 西安电子科技大学 | A kind of high power kerr lenses self mode-locked laser of optical fiber laser pump |
| CN109861070A (en) * | 2019-03-15 | 2019-06-07 | 苏州贝亚敏光电科技有限公司 | A kind of generating device of laser |
| CN111740303A (en) * | 2020-07-30 | 2020-10-02 | 暨南大学 | Femtosecond mode-locked laser based on disordered laser crystal and laser generation method |
| CN113783088A (en) * | 2021-08-17 | 2021-12-10 | 西北大学 | Dispersion management type fiber laser based on GTI |
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Application publication date: 20140917 |