CN104505705A - All-solid self-Raman femtosecond laser device - Google Patents
All-solid self-Raman femtosecond laser device Download PDFInfo
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- CN104505705A CN104505705A CN201410660352.XA CN201410660352A CN104505705A CN 104505705 A CN104505705 A CN 104505705A CN 201410660352 A CN201410660352 A CN 201410660352A CN 104505705 A CN104505705 A CN 104505705A
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Abstract
The invention relates to the technical field of short pulse laser and specifically discloses an all-solid self-Raman femtosecond laser device. The femtosecond laser device comprises a semiconductor laser device end face pumping system, a dichroic mirror, a Yb-doped tungstate crystal, two broadband negative dispersion mirrors, a beam splitter mirror, a coupling output mirror, and a semiconductor saturable absorption mirror arranged perpendicular to a light path of the beam splitter mirror, wherein the dichroic mirror, the two broadband negative dispersion mirrors, the beam splitter mirror and the semiconductor saturable absorption mirror form a femtosecond laser resonant cavity; and the dichroic mirror, the two broadband negative dispersion mirrors, the beam splitter mirror and the coupling output mirror form a Raman resonant cavity. The invention adopts a composite cavity composed of the femtosecond laser resonant cavity and the Raman resonant cavity and the laser crystal with a stimulated Raman scattering effect is arranged in the composite cavity, so that frequency conversion is realized by utilizing a nonlinear effect of the laser crystal in a femtosecond laser oscillator and Raman laser having a wavelength around 1140 nm is directly obtained. The femtosecond laser device has the characteristics of unique output wavelength, compact structure and high practicability.
Description
Technical field
The present invention relates to short pulse laser technology field, particularly one is all solid state from Raman femto-second laser.
Background technology
Femtosecond laser has the outstanding features such as pulse duration is narrow, peak power is high, be used widely in various fields such as the basic scientific research such as physics, chemistry, micro-nano technology, life medical science, information communication, military and national defense, satellite rangings, for the exploration of above-mentioned leading-edge field and development provide strong instrument.
At present, Ti∶Sapphire laser femto-second laser is that technology is the most ripe, application femto-second laser the most widely.The solid laser material of doped with rare-earth elements is another kind of important laser material.Wherein, mix laser material and the laser thereof of Yb rare earth ion, compared with titanium precious stone laser, its simple level structure, lower quantum defect, broadband emission spectra, can by high-power InGaAs diode-end-pumped.Thus decrease the link of energy transferring, laser conversion efficiency also significantly improves, and the cost of laser system reduces greatly.The study hotspot of all solid state femtosecond laser technology since above-mentioned doped with rare-earth elements laser has become the nearly more than ten years, and be used widely in fields such as optical communication, medical science, military affairs, Strong-field physics.
But, ti sapphire laser, mix the restriction that Yb material laser device etc. is subject to laser gain material level structure, can only export a certain specific wavelength, such as ti sapphire laser output wavelength is near 800nm, mixes Yb material laser device output wavelength near 1030nm.Along with going deep into of research, the femtosecond laser of single wave band can not meet the application demand grown with each passing day, and therefore more the production method of multiband femtosecond laser becomes problem demanding prompt solution.
Summary of the invention
The present invention is intended to the defect overcoming existing femto-second laser technology, obtains new wavelength, provides a kind of all solid state from Raman femto-second laser.
For achieving the above object, the present invention is by the following technical solutions:
The invention provides a kind of all solid state from Raman femto-second laser, comprise: semiconductor laser end pumping system, the bidirectional color mirror arranged successively along paths direction, mix Yb tungstate crystal, two broadband negative dispersion mirrors, beam splitter, output coupling mirror, and the semiconductor saturable absorbing mirror of the light path arrangement of vertical described beam splitter;
Wherein, described bidirectional color mirror, two broadband negative dispersion mirrors, beam splitter, semiconductor saturable absorbing mirror form femtosecond laser resonant cavity, described bidirectional color mirror, two broadband negative dispersion mirrors, beam splitter, output coupling mirror form Raman resonant cavity, described in mix Yb tungstate crystal be laser gain crystal.
In some embodiments, described semiconductor laser end pumping system comprises semiconductor laser, collimating lens, the condenser lens that coupling fiber exports.The emission wavelength of the semiconductor laser that coupling fiber exports is 980nm, and the diameter of fiber core is 100 ~ 200 microns.
In some embodiments, described bidirectional color mirror is level crossing; Described bidirectional color mirror is coated with film system, described film be anti-reflection to the pump light of 980nm wavelength, to the basic frequency laser of 1030nm wavelength and the raman laser high reverse--bias of 1140nm wavelength.
In some embodiments, described in mix Yb tungstate crystal and cut along the Ng axle of crystal, its end face and light path are 1 ~ 2 degree at horizontal plane angle; Described crystal end-face is coated with film system, described film be pump light to 980nm wavelength, to the basic frequency laser of 1030nm wavelength and the raman laser of 1140nm wavelength anti-reflection.
In some embodiments, described broadband negative dispersion mirror is concave mirror, and its radius of curvature is 100 ~ 400 millimeters; Described broadband negative dispersion mirror is coated with film system, and described film is have Negative Dispersion Properties to 1030nm wavelength, to the basic frequency laser of 1030nm wavelength and the raman laser high reverse--bias of 1140nm wavelength.
In some embodiments, described beam splitter is coated with the basic frequency laser high reverse--bias of 1030nm wavelength and the anti-reflection film system of the raman laser of 1140nm wavelength.
In some embodiments, it is 0.5% ~ 5% film system that described output coupling mirror is coated with transmitance, and described film is the raman laser fractional transmission to 1140nm wavelength.
In some embodiments, described semiconductor saturable absorbing mirror operation wavelength is 1030nm, and modulation depth is 0.5% ~ 2%.
Beneficial effect of the present invention is: the Compound Cavity adopt semiconductor laser end pumping system, being made up of femtosecond laser resonant cavity and Raman resonant cavity, places the laser crystal with stimulated raman scattering in chamber; Thus utilize the nonlinear effect of femtosecond laser oscillator inner laser crystal self to realize frequency translation, directly obtain the raman laser of wavelength near 1140nm, there is output wavelength uniqueness, compact conformation, practical feature.
Accompanying drawing explanation
Fig. 1 schematically shows all solid state according to an embodiment of the invention from Raman femto-second laser structural representation.
Fig. 2 is the schematic diagram of semiconductor laser end pumping system 1 in Fig. 1.
Semiconductor laser end pumping system 1; Bidirectional color mirror 2;
Mix Yb tungstate crystal 3; Broadband negative dispersion mirror 4;
Beam splitter 5; Semiconductor saturable absorbing mirror 6
Output coupling mirror 7;
The semiconductor laser 11 that coupling fiber exports; Collimating lens 12;
Condenser lens 13.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and the specific embodiments, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, and be not construed as limiting the invention.
The invention provides and a kind of utilize that to mix Yb tungstate crystal be both femtosecond laser material, the again double grading of stimulated Raman scattering material, thus obtain the femtosecond laser of wavelength near 1140nm.
Please refer to Fig. 1, illustrate all solid state according to an embodiment of the invention from Raman femto-second laser.
Comprise: the semiconductor laser end pumping system 1 of arranging successively along paths direction, bidirectional color mirror 2, mix Yb tungstate crystal 3, two broadband negative dispersion mirror 4, beam splitter 5, output coupling mirror 7, and the semiconductor saturable absorbing mirror 6 of the light path arrangement of vertical described beam splitter 5; Femto-second laser of the present invention is Compound Cavity structure.Wherein, above-mentioned light path is zigzag.
Wherein, bidirectional color mirror 2, two broadband negative dispersion mirror 4, beam splitter 5, semiconductor saturable absorbing mirror 6 form femtosecond laser resonant cavity; Bidirectional color mirror 2, two broadband negative dispersion mirror 4, beam splitter 5, output coupling mirror 7 form Raman resonant cavity; Mix Yb tungstate crystal 3 for laser gain crystal, it is also non-linear stimulated Raman scattering crystal.
Mix Yb tungstate crystal 3 is excited generation light by semiconductor laser end pumping system 1, after successively being reflected by two broadband negative dispersion mirrors 4 and a beam splitter 5, incide semiconductor saturable absorbing mirror 6, Guang Yuan road returns by semiconductor saturable absorbing mirror 6.Wherein, the concave surface of two broadband negative dispersion mirrors 4 is oppositely arranged.
Semiconductor laser end pumping system 1 comprises semiconductor laser 11, collimating lens 12, the condenser lens 13 that coupling fiber exports.Can preferably, the semiconductor laser 11 that coupling fiber exports adopts peak power output 20W, and emission wavelength is near 980nm, and the diameter of its fiber core is the semiconductor laser of 100 ~ 200 microns.As shown in Figure 2, the semiconductor laser 11 that coupling fiber exports sends conical diverging light.Through the divergent beams collimation that coupling fiber exports by collimating lens 12, collimated light beam focuses on by condenser lens 13.
Bidirectional color mirror 2 is level crossing, further, bidirectional color mirror 2 is coated with film system, and above-mentioned film is anti-reflection to the pump light of wavelength near 980nm, to wavelength near the basic frequency laser of wavelength near 1030nm and 1140nm raman laser high reverse--bias.Wherein, film is tantalum oxide/silica medium film, thickness about 7.5 microns.
Reflect to prevent crystal end-face and have an impact to laser generation, mix Yb tungstate crystal 3 and cut along the Ng axle of crystal, its end face and light path are 1 ~ 2 degree at horizontal plane angle; What the above-mentioned Yb of mixing tungstate crystal 3 was matrix for the tungstate crystal (KGW or KYW) with stimulated raman scattering mixes Yb ion laser crystal, wherein, mix Yb ion concentration and actual size is selected according to practical application, Yb ion doping concentration is usually 2% ~ 5%, and crystal length is generally 2mm ~ 6mm.
Mix Yb tungstate crystal 3 end face and be coated with film system, above-mentioned film is that near the basic frequency laser of wavelength near, 1030nm anti-reflection to the pump light of wavelength near 980nm and 1140nm, the raman laser of wavelength is anti-reflection.Wherein, film is tantalum oxide dielectric film, and thickness is about 800nm.
The pump light that above-mentioned semiconductor laser end pumping system 1 sends is mixing Yb tungstate crystal 3 by bidirectional color mirror 2 post-concentration, thus the pump light that semiconductor laser end pumping system 1 sends is mixed Yb tungstate crystal 3 and absorbed.
Particularly, semiconductor laser end pumping system 1 comprises semiconductor laser 11, collimating lens 12, the condenser lens 13 that coupling fiber exports.The semiconductor laser 11 that coupling fiber exports sends conical diverging light.The divergent beams collimation that coupling fiber exports by collimating lens 12, collimated light beam focuses on by condenser lens 13.Focused beam enters mixes Yb tungstate crystal 3 in resonant cavity.
Broadband negative dispersion mirror 4 is concave mirror, and its radius of curvature is 100 ~ 400 millimeters; Broadband negative dispersion mirror 4 is coated with film system, and above-mentioned film is have Negative Dispersion Properties to wavelength near 1030nm, to the raman laser high reverse--bias of wavelength near the basic frequency laser of wavelength near 1030nm and 1140nm.Broadband negative dispersion mirror 4 in the embodiment of the present invention can compensate in laserresonator the positive dispersion of mixing Yb tungstate crystal 3 and introducing.Wherein, film is that tantalum oxide/silica Gires-Tournois type interferes deielectric-coating, thickness about 10 microns.
Beam splitter 5 is coated with the basic frequency laser high reverse--bias of 1030nm wavelength and the anti-reflection film system of the raman laser of 1140nm wavelength.Wherein, film is tantalum oxide/silica medium film, thickness about 8 microns.
Above-mentioned semiconductor saturable absorbing mirror 6 operation wavelength is near 1030nm, and modulation depth is 0.5% ~ 2%, and its laser part to wavelength near 1030nm reflects, and semiconductor saturable absorbing mirror 6 starts for the locked mode realizing femto-second laser.
In the present invention, bidirectional color mirror 2, two broadband negative dispersion mirror 4, beam splitter 5, semiconductor saturable absorbing mirror 6 form femtosecond laser resonant cavity, produce femtosecond laser.
Laser in femtosecond laser resonant cavity of the present invention comes and goes and produces stimulated Raman scattering light by mixing Yb tungstate crystal 3, and scattered light is reflected by two broadband negative dispersion mirrors 4, through beam splitter 5, is coupled the former road of outgoing mirror 7 part and returns.Wherein, output coupling mirror 7 is coated with the film system of the raman laser fractional transmission to wavelength near 1140nm, and transmitance is 0.5% ~ 5%.Wherein, film is tantalum oxide/silica medium film.
Bidirectional color mirror 2, two broadband negative dispersion mirror 4, beam splitter 5, output coupling mirror 7 form Raman resonant cavity, thus export the Raman femtosecond laser of wavelength near 1140nm by output coupling mirror 7.
The embodiment of the present invention adopts the Compound Cavity of mixing Yb tungstate crystal, being made up of femtosecond laser resonant cavity and Raman resonant cavity, places the laser crystal with stimulated raman scattering in chamber; Thus utilize the nonlinear effect of femtosecond laser oscillator inner laser crystal self to realize frequency translation, directly obtain the raman laser of wavelength near 1140nm, there is output wavelength uniqueness, compact conformation, practical feature.
The above the specific embodiment of the present invention, does not form limiting the scope of the present invention.Any various other done by technical conceive of the present invention change and distortion accordingly, all should be included in the protection range of the claims in the present invention.
Claims (8)
1. one kind all solid state from Raman femto-second laser, it is characterized in that, comprise: semiconductor laser end pumping system, the bidirectional color mirror arranged successively along paths direction, mix Yb tungstate crystal, two broadband negative dispersion mirrors, beam splitter, output coupling mirror, and the semiconductor saturable absorbing mirror of the light path arrangement of vertical described beam splitter;
Wherein, described bidirectional color mirror, two broadband negative dispersion mirrors, beam splitter, semiconductor saturable absorbing mirror form femtosecond laser resonant cavity, described bidirectional color mirror, two broadband negative dispersion mirrors, beam splitter, output coupling mirror form Raman resonant cavity, described in mix Yb tungstate crystal be laser gain crystal.
2. all solid state from Raman femto-second laser as claimed in claim 1, it is characterized in that, described semiconductor laser end pumping system comprises the semiconductor laser that coupling fiber exports, and its emission wavelength is 980nm, and the diameter of fiber core is 100 ~ 200 microns.
3. all solid stately as claimed in claim 1 it is characterized in that from Raman femto-second laser, described bidirectional color mirror is level crossing; Described bidirectional color mirror is coated with film system, described film be anti-reflection to the pump light of 980nm wavelength, to the basic frequency laser of 1030nm wavelength and the raman laser high reverse--bias of 1140nm wavelength.
4. all solid stately as claimed in claim 1 to it is characterized in that from Raman femto-second laser, described in mix Yb tungstate crystal and cut along the Ng axle of crystal, its end face and light path are 1 ~ 2 degree at horizontal plane angle; The described Yb of mixing tungstate crystal crystal end-face is coated with film system, and described film is that the raman laser of pump light to 980nm wavelength, the basic frequency laser of 1030nm wavelength and 1140nm wavelength is anti-reflection.
5. all solid stately as claimed in claim 1 it is characterized in that from Raman femto-second laser, described broadband negative dispersion mirror is concave mirror, and its radius of curvature is 100 ~ 400 millimeters; Described broadband negative dispersion mirror is coated with film system, and described film is have Negative Dispersion Properties to 1030nm wavelength, to the basic frequency laser of 1030nm wavelength and the raman laser high reverse--bias of 1140nm wavelength.
6. all solid stately as claimed in claim 1 it is characterized in that from Raman femto-second laser, described beam splitter is coated with the basic frequency laser high reverse--bias of 1030nm wavelength and the anti-reflection film system of the raman laser of 1140nm wavelength.
7. all solid stately as claimed in claim 1 it is characterized in that from Raman femto-second laser, it is 0.5% ~ 5% film system that described output coupling mirror is coated with transmitance, and described film is the raman laser fractional transmission to 1140nm wavelength.
8. all solid stately as claimed in claim 1 it is characterized in that from Raman femto-second laser, described semiconductor saturable absorbing mirror operation wavelength is 1030nm, and modulation depth is 0.5% ~ 2%.
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Cited By (1)
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| CN106058632A (en) * | 2016-07-15 | 2016-10-26 | 暨南大学 | Pulse-energy-adjustable passive Q-switched Raman laser system based on bonding crystals |
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