CN102104231A - Graphene Raman mode-locked laser - Google Patents
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- CN102104231A CN102104231A CN 201110001623 CN201110001623A CN102104231A CN 102104231 A CN102104231 A CN 102104231A CN 201110001623 CN201110001623 CN 201110001623 CN 201110001623 A CN201110001623 A CN 201110001623A CN 102104231 A CN102104231 A CN 102104231A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 81
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 78
- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 49
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- 229910002804 graphite Inorganic materials 0.000 claims abstract description 3
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- 239000013078 crystal Substances 0.000 claims description 11
- 239000013307 optical fiber Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
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- COQOFRFYIDPFFH-UHFFFAOYSA-N [K].[Gd] Chemical compound [K].[Gd] COQOFRFYIDPFFH-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000004038 photonic crystal Substances 0.000 claims description 4
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- 239000000126 substance Substances 0.000 claims description 2
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 2
- 229920006395 saturated elastomer Polymers 0.000 abstract description 2
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Abstract
The utility model provides a graphite alkene raman mode-locked laser which characterized in that: laser gain is provided through a stimulated Raman scattering effect with flexible wavelength, and mode-locked laser output is realized by combining a graphene mode-locked device with wide saturated absorption band. The whole device is a graphene Raman mode-locked laser formed by a mechanism combining a stimulated Raman gain medium and a graphene mode-locked device, is compact in structure and convenient to integrate, and can be applied to multiple fields.
Description
Technical field
The present invention relates to mode-locked laser, particularly a kind of in conjunction with length flexible the stimulated Raman scattering effect and the Graphene Raman mode-locked laser of the saturable absorption characteristic of Graphene broadness.
Background technology
The ultra-short pulse laser technology is one of most important forward position of modern science, over nearly 30 years, scientist for action time the chemical reaction kinetics process of femtosecond yardstick and semiconductor, solid material can deep understanding all be arranged with relaxation process, even captured the motion process of the electronics of Ah second's relaxation around electronics nuclear.The ultra-short pulse laser technical development is rapid, and mechanism such as active mode locking, passive mode locking, synchronous pump locked mode, self mode locking are used for mode-locked laser in succession, make the ultrashort pulse technology obtain huge development.In laser, obtaining the most frequently used way of ultrashort pulse is to add saturable absorber in laser cavity.But, because the wave band restriction of general gain medium output wave band restriction and saturable absorber, be difficult in the inoperable wave band of common laser gain media and saturable absorber and realize ultrashort pulse output [patent name: PASSIVELY MODELOCKED FIBER LASERUSING CARBON NANOTUBES, application number: EP200900012100, publication number: EP2169785], therefore, limited its application.
Summary of the invention
The technical problem to be solved in the present invention is the ultrashort pulse output for especially common gain media of the ultrashort pulse that realizes broad wave band and the inoperable wave band of saturable absorber, a kind of Graphene Raman mode-locked laser is provided, to realize the ultrashort pulse output of broad wave band, expand the range of application of ultra-short pulse laser.
The know-why that the present invention solves the problems of the technologies described above is as follows:
New Graphene saturable absorber is based on the novel saturable absorption device of Pauli's exclusion principle, when electron transition to the speed of excitation state during greater than relaxation rate, absorption process just reaches saturated, and reason is not had the sub-transition " space " of can powering in the excitation state.Because the diracelectron in the Graphene has linear dispersion, mean that Graphene has super wide saturable absorption spectrum.
The gain wavelength of stimulated Raman scattering effect as long as suitable pumping source is arranged in theory, can be realized the excited Raman laser output of any wave band by the decision of the centre wavelength of pumping source.
The present invention combines the characteristics of stimulated Raman scattering effect length flexible and the broadband saturable absorption of Graphene saturable absorber, has realized the ultrashort pulse output of length flexible, the inaccessiable wave band output of especially common gain media.
Technical solution of the present invention is as follows:
A kind of Graphene Raman mode-locked laser comprises laser mirror, pumping source, input coupling device and output device, is characterized in being provided with excited Raman gain media, Graphene locked mode device and dispersion compensation device between described two laser mirrors.
Described excited Raman gain media is solid state gain medium or fiber gain medium, and described solid state gain medium is wolframic acid gadolinium potassium crystal, Nd-doped yttrium vanadate crystal or diamond crystal; Described fiber gain medium is general single mode fiber or highly nonlinear optical fiber.
Described Graphene locked mode device is to adopt chemical method or physical method to obtain the single or multiple lift Graphene from bulk graphite to constitute.
Described laser is solid Roman laser or fibre optic Raman laser.
Described pumping source is semiconductor laser, solid state laser or fiber laser, and the centre wavelength that changes pumping source is exported with the laser of realizing length flexible in conjunction with the stimulated Raman scattering effect.
Described Graphene locked mode device is made by Graphene, and Graphene is a kind of crystal with one or several carbon atomic layer (usually less than 10 layers) that is made of carbon atom chain.Each carbon atom and other 3 carbon atoms of constituting Graphene connect and compose individual layer hexagonal cellular honeycomb lattice carbon atom plane by the σ key, and its electronic energy moves with hypervelocity, the similar no rest mass Dirac particle of behavior.Type difference according to laser, for solid state laser, Graphene can be applied to laser reflecting cavity mirror [Tawfique Hasan et al, Nanotube-Polymer Compositesfor Ultrafast Photonics, Adv.Mater.21,3874-3899 (2009)], also can making independently, Graphene locked mode device places [Tawfique Hasan in the laser cavity, Nanotube-PolymerComposites for Ultrafast Photonics, Adv.Mater.21,3874-3899 (2009)]; For fiber laser, can precipitate [Zhengqian Lu et al with optics, Graphene-basedpassively Q-switched dual-wavelength erbium-doped fiber laser, OpticLetters, Vol.35 Issue 21,3709-3711, (2010)] method is adsorbed in fiber end face with Graphene, or place one section optical fiber side U type groove area or circle to draw awl district [Yong-WonSong et al the Graphene, Graphene mode-lockers for fiber lasers functioned withevanescent field interaction, Appl.Phys.Lett.96,051122 (2010)], that maybe will make places [Qiaoliang Bao et al between two sections optical fiber based on the discrete locked mode device of Graphene, Atomic-Layer Graphene as a Saturable Absorber for Ultrafast Pulsed Lasers, Advanced Functional Materials, Volume 19, Issue 19, (2009)].
Described resonant cavity chamber mirror, in solid state laser, resonant cavity chamber mirror is plating high level crossing or concave mirror anti-or partly anti-film; In fiber laser, resonant cavity chamber mirror is Fiber Bragg Grating FBG or optical fibre ring laser cavity.
Described pumping source can be semiconductor laser, solid state laser or fiber laser, by changing pumping source or selecting for use tunable pumping source to change pump light centre wavelength, can realize the laser output of length flexible in conjunction with the stimulated Raman scattering effect.
Described dispersion compensation device, in solid state laser, dispersion compensation device can be Amici prism or grating pair; In fiber laser, dispersion compensation device can be common single mode optical fibres, chirped fiber grating or photonic crystal fiber etc.
Compared with prior art, the present invention has the following advantages:
1, Graphene Raman mode-locked laser of the present invention can be implemented in the mode locking of the wave band that the especially common gain media in broadband is difficult to export by the pumping source of changing different-waveband, has expanded the range of application of ultra-short pulse laser.
2, Graphene Raman mode-locked laser of the present invention can be widely used in solid state laser, fiber laser etc., is widely used, and applicability is strong.
In a word, the present invention has compact conformation, the adjustable characteristics of output pulse wave band, has very high practical value.
Description of drawings
Fig. 1 is the overall schematic block diagram of Graphene Raman mode-locked laser of the present invention.
Fig. 2 is the structural representation of Graphene Raman mode-locked laser embodiment 1 of the present invention.
Fig. 3 is the structural representation of Graphene Raman mode-locked laser embodiment 2 of the present invention.
Fig. 4 is the structural representation of Graphene Raman mode-locked laser embodiment 3 of the present invention.
Fig. 5 is the structural representation of one of Graphene locked mode device in the embodiment of the invention 3.
Fig. 6 is two a structural representation of Graphene locked mode device in the embodiment of the invention 3.
Fig. 7 is three a structural representation of Graphene locked mode device in the embodiment of the invention 3.
Fig. 8 is four a structural representation of Graphene locked mode device in the embodiment of the invention 3.
Embodiment
The present invention is described further below in conjunction with drawings and Examples, but should not limit protection scope of the present invention with this.
See also Fig. 1 earlier, Fig. 1 is the overall schematic block diagram of Graphene Raman mode-locked laser of the present invention.As seen from the figure, Graphene Raman mode-locked laser of the present invention, comprise laser mirror 3, pumping source 4, input coupling device and output device, be characterized between described two laser mirrors 3, being provided with excited Raman gain media 1, Graphene locked mode device 2 and dispersion compensation device 5.
See also Fig. 2, Fig. 2 is the structural representation of Graphene Raman mode-locked laser embodiment 1 of the present invention.As seen from the figure, the mode-locked laser of length flexible of the present invention comprises pumping source 1401, input coupling system 1301, first speculum 1302, second speculum 1303, wolframic acid gadolinium potassium crystal 1101, Graphene locked mode device 1201, grating pair 1501.Wolframic acid gadolinium potassium crystal 1101 is used to provide Raman gain, Graphene locked mode device 1201 is Graphene to be placed on the speculum be made, be used to realize Passive Mode locking in the chamber, grating pair 1501 is used for the chromatic dispersion in the chamber is compensated, to realize the compression to mode locking pulse, second speculum 1303 is used for oscillation light in the output cavity.By changing the centre wavelength of pump light, in conjunction with the stimulated Raman scattering effect, laser is carried out dispersion management, optimize laser parameters, when when phase modulated and group velocity dispersion reach balance in laser cavity, can realize the ultrashort pulse output of broad band wavelength.
See also Fig. 3, Fig. 3 is the structural representation of the embodiment of the invention 2.As seen from the figure, the mode-locked laser of length flexible of the present invention, comprise pumping source 2401, input coupling system 2301, first speculum 2302, wolframic acid gadolinium potassium crystal 2 101, Graphene locked mode device 2201, grating pair 2501, second speculum 2303, the 3rd speculum 2304, the four speculums 2305.The pump light 2401 of different centre wavelengths is by input coupling system 2301 input laser cavities, wolframic acid gadolinium potassium crystal 2 101 is used to provide Raman gain, Graphene locked mode device 2201 independently locked mode device for Graphene and high molecular polymer are mixed and made into, be used to realize Passive Mode locking in the chamber, grating pair 2501 is used for the chromatic dispersion in the chamber is compensated, to realize the compression to mode locking pulse, second speculum 2303 is used for oscillation light in the output cavity.By changing the centre wavelength of pump light, in conjunction with the stimulated Raman scattering effect, laser is carried out dispersion management, optimize laser parameters, when when phase modulated and group velocity dispersion reach balance in laser cavity, can realize the ultrashort pulse output of broad band wavelength.
See also Fig. 4, Fig. 4 is the structural representation of the embodiment of the invention 3, and Fig. 5, Fig. 6, Fig. 7 and Fig. 8 are respectively the concrete form of the Graphene locked mode device among the embodiment 3.Fig. 5 draws awl to a section single-mould fiber, Graphene is placed the profile that draws the awl district again, and 5201 is coverings of monomode fiber among the figure, and the 5202nd, optical fiber draws the Graphene in awl district, the 5203rd, fiber core; Fig. 6 carves U type groove in a side of a section single-mould fiber, Graphene is placed the profile in U type cutting district again; 6201 is coverings of monomode fiber among the figure, the 6202nd, and the Graphene in U type cutting district, the 6203rd, fiber core; Fig. 7 is adsorbed in fiber end face with the method for optics precipitation with Graphene to a section single-mould fiber, with the two ends fiber alignment, fixes with ring flange then, and 7201 is two section single-mould fibers among the figure, 7202 Graphenes for absorption, and 7203 are the fixing ring flange of usefulness; Fig. 8 is that the Graphene that will make and the thin slice composite material of high molecular polymer place between two section single-mould fibers, fix with ring flange, 8201 is two section single-mould fibers among the figure, and 8202 is the mixture of Graphene and high molecular polymer, and 8203 are the fixing ring flange of usefulness;
As seen from Figure 4, Graphene Raman mode-locked laser of the present invention comprises pumping source 3401, wavelength division multiplexer 3301, Polarization Controller 3302, single-mode polarization maintaining fiber 3101, Graphene locked mode device 3201, photonic crystal fiber 3501, output coupler 3303 and isolator 3304.The pump light 3401 of different centre wavelengths is by wavelength division multiplexer 3301 input laser cavities, Polarization Controller 3302 is used for regulating the vibration polarization state of light, to eliminate the locking of nonlinear polarization rotary mode, single-mode polarization maintaining fiber 3101 provides Raman gain to increase, Graphene locked mode device 3201 is used to realize Passive Mode locking in the chamber, photonic crystal fiber 3501 is used to compensate the chromatic dispersion of laser cavity, and output coupler 3303 is with oscillation light output in the chamber, and isolator 3304 guarantees the one way propagation of oscillation light in the chamber.By changing the centre wavelength of pumping source, in conjunction with the stimulated Raman scattering effect, laser is carried out dispersion management, optimize laser parameters, when when phase modulated and group velocity dispersion reach balance in laser cavity, can realize the ultrashort pulse output of broad band wavelength.
Claims (9)
1. Graphene Raman mode-locked laser, comprise two laser mirrors (3), pumping source (4), input coupling device and output device, it is characterized in that between described two laser mirrors (3), being provided with excited Raman gain media (1), Graphene locked mode device (2) and dispersion compensation device (5).
2. Graphene Raman mode-locked laser according to claim 1, it is characterized in that: described excited Raman gain media is solid state gain medium or fiber gain medium, and described solid state gain medium is wolframic acid gadolinium potassium crystal, Nd-doped yttrium vanadate crystal or diamond crystal; Described fiber gain medium is general single mode fiber or highly nonlinear optical fiber.
3. Graphene Raman mode-locked laser according to claim 1 is characterized in that: described Graphene locked mode device is to adopt chemical method or physical method to obtain the single or multiple lift Graphene from bulk graphite to constitute.
4. Graphene Raman mode-locked laser according to claim 3 is characterized in that: the preparation method of described Graphene locked mode device:
Adopt the method for optics precipitation that Graphene is adsorbed in fiber end face for fiber laser, or Graphene placed optical fiber side U type groove area, or placing the annular of optical fiber to draw awl district the Graphene, the discrete locked mode device based on Graphene that maybe will make places between two sections optical fiber;
For solid state laser, be Graphene to be applied on the side of raman gain medium or the laser reflecting cavity mirror constitute, or make independently that Graphene locked mode device places in the laser cavity.
5. Graphene Raman mode-locked laser according to claim 1 is characterized in that: described laser is solid Roman laser or fibre optic Raman laser.
6. Graphene Raman mode-locked laser according to claim 1, it is characterized in that: described pumping source is semiconductor laser, solid state laser or fiber laser, and the centre wavelength that changes pumping source is exported with the laser of realizing length flexible in conjunction with the stimulated Raman scattering effect.
7. Graphene Raman mode-locked laser according to claim 1 is characterized in that: described dispersion compensation device is grating pair, Amici prism, photonic crystal fiber or general single mode fiber.
8. Graphene Raman mode-locked laser according to claim 1 is characterized in that: described resonant cavity chamber mirror, and in solid state laser, resonant cavity chamber mirror is plating high level crossing or concave mirror anti-or partly anti-film; In fiber laser, resonant cavity chamber mirror is Fiber Bragg Grating FBG or optical fibre ring laser cavity.
9. according to each described Graphene Raman mode-locked laser of claim 1 to 7, it is characterized in that: described input coupling device is incoming wave division multiplexer, input coupler or space coupled lens system.
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Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102306895A (en) * | 2011-08-18 | 2012-01-04 | 厦门大学 | Graphene-based Q-modulation Raman fiber laser |
CN103199425A (en) * | 2013-04-08 | 2013-07-10 | 青岛大学 | All-solid-state visible light passive mode-locked laser |
WO2013107284A1 (en) * | 2012-01-20 | 2013-07-25 | 上海交通大学 | Middle infrared femtosecond mode-locked laser |
CN103337774A (en) * | 2013-05-31 | 2013-10-02 | 西北核技术研究所 | Tunable mode locking fiber laser based on fiber grating and graphene |
CN103401133A (en) * | 2013-07-12 | 2013-11-20 | 吉林大学 | Saturable absorber based on plasmon axial vibration mode |
CN104134926A (en) * | 2014-07-02 | 2014-11-05 | 上海大学 | Passive mode-locking Er-doped fiber laser based on gold nanoparticle saturable absorber |
CN104242046A (en) * | 2014-10-22 | 2014-12-24 | 青岛大学 | Graphene-based mode-locked laser device |
CN104319614A (en) * | 2014-11-05 | 2015-01-28 | 天津大学 | 1.5-micron human eye safety wave band ultrashort pulse laser |
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CN104505706A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | YVO4 femtosecond laser device capable of emitting laser having wavelength around 1134 nm |
CN104505705A (en) * | 2014-11-19 | 2015-04-08 | 中国科学院光电研究院 | All-solid self-Raman femtosecond laser device |
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CN115683185A (en) * | 2022-10-28 | 2023-02-03 | 南京邮电大学 | Design method of symmetrical biconical phase-shift fiber bragg grating and sensor system |
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CN112751255A (en) * | 2020-12-14 | 2021-05-04 | 南京工业大学 | Raman laser enhancing device and method based on high nonlinear photonic crystal fiber |
CN115683185A (en) * | 2022-10-28 | 2023-02-03 | 南京邮电大学 | Design method of symmetrical biconical phase-shift fiber bragg grating and sensor system |
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