CN106772733A - Three-dimensional Dirac semimetal diffraction grating - Google Patents
Three-dimensional Dirac semimetal diffraction grating Download PDFInfo
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- CN106772733A CN106772733A CN201611214747.2A CN201611214747A CN106772733A CN 106772733 A CN106772733 A CN 106772733A CN 201611214747 A CN201611214747 A CN 201611214747A CN 106772733 A CN106772733 A CN 106772733A
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
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- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
A kind of three-dimensional dirac semimetal diffraction grating, using zero band gap, linear energy dispersion relation three-dimensional dirac semi-metallic as diffraction grating groove material, the grating operation wavelength covers 26 microns of region of ultra-red, various nonlinear optics Parameter adjustable controls；Device include the diffraction grating functional layer being made up of three-dimensional dirac semi-metallic and carry the functional layer needed for optical element.Described three-dimensional dirac semimetal diffraction grating has high reflectance type and antiradar reflectivity type both of which a kind of based on the semimetallic diffraction grating device of three-dimensional dirac.Present invention also offers the concrete scheme that tunable wave length infrared pulsed lasers are produced using saturable absorption (or ultra-fast optical switch) characteristic of the three-dimensional dirac semimetal diffraction grating.
Description
Technical field
The present invention relates to diffraction grating, infrared three-dimensional dirac half in three-dimensional dirac semi-metallic is based especially on
Metal diffraction grating, belongs to optical technical field.
Background technology
Infrared ultra-short pulse laser source is to study active advanced subject in non-linear optical field, in communication, medicine, outer
Value that section performs the operation and the field such as molecular spectrum is all widely used.The generation of middle pulsed infrared laser mainly has actively and passively two
Kind of mode, wherein passive mode are due to without external electronic controller part, and the pulse of generation is shorter, so enjoying people blue or green
Look at.
Optical switch device and diffraction grating are to realize the core two that outside cavity gas laser passive mode pulse laser is produced
Primary Component.The absorptivity of optical switch device increases and reduces with incident optical power, with significant optical switch feature,
It is the necessary device of laser passive mode-locking.CNT, Graphene, black phosphorus, two-dimentional transient metal sulfide, quasi- two-dimensional topology
Although the low-dimension nano materials such as insulator have an outstanding Reflection Optical Thin Film switching characteristic, but in the preparation frequently with liquid phase peel off or after
, there are a large amount of defect states in device, be difficult to control to material crystalline quality, nonlinear optics parameter and repeatability in transfer method.
Diffraction grating has wavelength alternative, is the core devices of Wavelength-tunable external cavity laser.Current comparative maturity
Extenal cavity tunable laser with active-passive lock mould chamber in simultaneously exist such as CNT, Graphene etc material as optics
Switch and realize the diffraction grating of tunable wave length.Using low-dimension nano material as optical switch exocoel passive mode-locking laser
Device intraluminal device is more, complex structure, and it is inevitable to cause that this clamping system integrated level is low, stability is poor, energy loss is big etc.
Shortcoming.Laser chamber is elongated while optical switch and diffraction grating separately work long, caused it is difficult to acquisition repetition rate is high
Stable mode-locking pulse.This present situation makes pulsed infrared laser be difficult to produce and optimize, and far can not meet people to infrared lock
The demand of mould pulse laser.
The content of the invention
In order to solve problem above, it is an object of the present invention to provide a kind of integrated level is high, reliable, Parameter adjustable
The three-dimensional dirac semimetal echelette diffraction grating of control.The three-dimensional dirac semimetal diffraction grating provided using the present invention, can
To realize the locked mode of middle infrared laser wide spectral range or adjust Q, so as to produce stabilization, tunable wave length, highly repeatable
High power pulse laser is exported.The present invention also specific providing is drawn on infrared three-dimensional Di in three-dimensional dirac semi-metallic
The technical scheme of gram semimetal diffraction grating locked mode or Q-switched pulse laser.
The technical solution for realizing the object of the invention is：A kind of three-dimensional dirac semimetal diffraction grating, its feature exists
In：Using zero band gap, linear energy dispersion relation three-dimensional dirac semi-metallic as diffraction grating groove material, the light
Grid operation wavelength covers 2-6 microns of region of ultra-red, various nonlinear optics Parameter adjustable controls；Device is included by three-dimensional dirac
Semi-metallic constitute diffraction grating functional layer and carry the functional layer needed for optical element.
Described three-dimensional dirac semimetal diffraction grating has high reflectance type and antiradar reflectivity type both of which；Wherein
High reflectance type three-dimensional dirac semimetal diffraction grating following material from top to bottom is distributed as：Functional layer (1) and optics unit
Part, the optical element is from top to bottom cushion (2), reflecting layer (3) and optical substrate (4)；Antiradar reflectivity type three-dimensional Di draw
Gram semimetal diffraction grating following material from top to bottom is distributed as：Functional layer (1), optical substrate (4).
Described functional layer (1) includes three-dimensional dirac semi-metallic and passivation layer；Wherein three-dimensional dirac semimetal
Material is a kind of broadband nonlinear optical material, has good optical switch performance in IR regions, can select arsenic
Cadmium (Cd3As2), bismuth sodium (Na3Bi), telluride zirconium (ZrTe5) etc. one or more in semi-metallic；Three-dimensional dirac
The typical thickness of half metal film is 10 nanometers to 10 microns；Passivation layer there is protection to make three-dimensional dirac semi-metallic
With, the stability of device can be improved, its material requirements is adapting to various working environments and in operation wavelength highly transparent, blunt
Changing layer material includes silica (SiO2), aluminum oxide (Al2O3) or calcirm-fluoride (CaF2) etc.；The preparation of passivation layer can pass through
The technology such as pulsed laser deposition, magnetron sputtering and thermal evaporation and molecular beam epitaxy is realized；The typical thickness of passivation layer is 100 nanometers
To 20 microns；
With parallel reticle structure, the reticle structure can make light that dispersion occurs to described functional layer (1), realize diffraction light
The optical electivity function of grid；By adjusting incisure density (200-600lines/mm), three-dimensional dirac semimetal can also be finely tuned
The line width of various optical parametrics such as the operation wavelength of diffraction grating, modulation depth, saturation light intensity and mode locking pulse；Reticle structure
Preparation method have ultraviolet photolithographic, chemical etching and nano impression etc..
Described cushion (2) has transmissivity very high in operating wavelength range, and preferred material is GaAs
(GaAs), carborundum (SiC) and aluminum oxide (Al2O3) etc., cushion can be by chemical vapor deposition, ald, magnetic control
It is prepared by the technologies such as sputtering, thermal evaporation and pulsed laser deposition.
Reflecting layer (3) in three-dimensional dirac semimetal diffraction grating can be the metallic reflection film in broadband, including gold
Film, silverskin and aluminium film etc.；It can also be the deielectric-coating of high reflectance.
Wherein, described optical substrate (4) requirement is transparent in outer spectral region inner height, and preferred optical substrate has dioxy
SiClx (SiO2), aluminum oxide (Al2O3), calcirm-fluoride (CaF2) and mica (Mica) etc..Substrate thickness is 0.1-10 millimeters.
Described functional layer (1) be three-dimensional dirac semi-metallic can by molecular beam epitaxy, ald and
The multiple coating films method such as chemical vapor deposition is grown；Preferred growth technique is molecular beam epitaxy, is grown using the technique
Three-dimensional dirac half metal film quality is good, crystallinity is high；Cd3As2The condition of membrane molecular beam epitaxy growth is as follows：Use
Purity is~99.999% (5N) cadmium source and arsenic source, and Cd is grown under conditions of ultrahigh vacuum, underlayer temperature are about 200 DEG C3As2
Film；The growth course of film can reflect (RHEED) in-situ monitoring using high energy electron, and typical growth rate is~
1 nm/minute.
The diffraction grating function is designed and adjusted by conditions such as the growth time of precise control material, speed and temperature
The nonlinear optics parameter of layer, so as to prepare the infrared optics switching device of different modulating depth；By controlling growth conditions, can
Regulated and controled with the optical parametric intrinsic to three-dimensional dirac semi-metallic, preferred doped chemical has Cr, In, Na and K etc..
Above-mentioned three-dimensional dirac semimetal diffraction grating is in cavity semiconductor pulse laser, exocoel solid laser
Application in device, exocoel fiber pulse laser.
The preparation method of three-dimensional dirac semimetal diffraction grating, reflecting layer (3), including golden mirror, silver mirror and aluminium mirror or height
Optical coating of reflectivity etc., uses the direct plated film of method such as magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation
In optical substrate (4), and ultraviolet photolithographic is used, reflector material is etched striated by the method such as chemical etching and nano impression
Periodic structure, makes it have diffraction function.Then magnetron sputtering, pulsed laser deposition are reused above reflecting layer (3)
The technology such as electron beam evaporation and thermal evaporation prepares cushion (2), and uses ultraviolet photolithographic, the method such as chemical etching and nano impression
Cushioning layer material is etched the periodic structure of striated, diffraction function is made it have.Using molecular beam epitaxy, ald and
Three-dimensional dirac semimetal of the methods such as chemical vapor deposition in the top of cushion (2) prepares functional layer (1), then uses
Dirac semimetal is etched the methods such as ultraviolet photolithographic, chemical etching and nano impression the periodic structure of striated, is made it have
Diffraction function.It is last to use magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation in the semimetallic top of dirac
It is passivated a layer plated film.
Wherein, an exemplary preparation flow is：500 are deposited with using thermal evaporation in the side of calcium fluoride substrate (4) to receive
The thick golden film of rice then reuses pulsed laser deposition and prepares the aluminum oxide film of 100 nanometer thickness as slow as reflecting layer (3)
Rush layer (2), using the nanometer thickness of molecular beam epitaxial growth 400 three-dimensional dirac semimetal Cadmium arsenide and using ultraviolet photolithographic by its
The striated structure of cycle shape is etched into, the aluminum oxide of 100 nanometers of pulsed laser deposition system is finally reused as passivation layer.
During using molecular beam epitaxial growth three-dimensional dirac semi-metallic, by the growth of precise control material
The conditions such as time, speed and temperature are designed and adjust the nonlinear optics parameter of the diffraction grating functional layer, so as to prepare not
The infrared optics switching device of same modulation depth, nonlinear loss.By controlling growth conditions, can be to the gold of three-dimensional dirac half
The intrinsic optical parametric of category material is regulated and controled, and preferred doped chemical has Cr, In, Na and K etc..
Three-dimensional dirac semimetal diffraction grating is in cavity semiconductor pulse laser, exocoel solid pulse laser, outer
Application in the fiber pulse laser of chamber.
Beneficial effect, compared with prior art, it is significantly excellent for the three-dimensional dirac semimetal diffraction grating that the present invention is provided
Point is that functional layer is by zero band gap and the three-dimensional dirac semi-metallic with linear energy dispersion relation is constituted so that should
Device can cover the infrared band of long wavelength, and the nonlinear optics parameter such as relaxation time and saturation light intensity height can
Control.As above the feature of the optical switch device is not available for prior art, therefore the device can be realized in infrared band
Stabilization, height are repeated and the pulse of Wavelength tunable control is exported.Can effectively shorten functional layer and diffraction grating are integrated
Laser chamber is long, the exocoel passive mode-locking/Q-switched laser based on three-dimensional dirac semimetal diffraction grating have integrated level it is high,
Stability is high, operation wavelength is tunable, be easier the advantages of obtaining high repetition frequency ultrashort pulse.
Brief description of the drawings
Fig. 1 is the schematic diagram of transoid three-dimensional dirac semimetal diffraction grating 1 high in embodiment 1.
Fig. 2 is the schematic diagram of low transoid three-dimensional dirac semimetal diffraction grating in embodiment 2.
Fig. 3 is the schematic diagram of transoid three-dimensional dirac semimetal diffraction grating 2 high in embodiment 3.
Fig. 4 is showing for the middle infrared solid pulse laser based on three-dimensional dirac semimetal diffraction grating in embodiment 4
It is intended to.
Fig. 5 is the middle infrared semiconductor pulse laser based on three-dimensional dirac semimetal diffraction grating in embodiment 5
Schematic diagram.
Fig. 6 is showing for the middle infrared optical fiber pulse laser based on three-dimensional dirac semimetal diffraction grating in embodiment 6
It is intended to.
Specific embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
Functional layer is three-dimensional dirac semi-metallic, comprising three-dimensional dirac semi-metallic and passivation layer.Wherein three
Dimension dirac semi-metallic is a kind of wide range nonlinear optical material, has good optical switch in IR regions
Can, can select Cadmium arsenide (Cd3As2), bismuth sodium (Na3Bi), telluride zirconium (ZrTe5) etc. one or more in semi-metallic.
The typical thickness of three-dimensional dirac half metal film is 10 nanometers to several microns；Passivation layer is to three dirac semi-metallics
With protective effect, the stability of device can be improved, its material requirements is adapting to various working environments and in operation wavelength
Highly transparent, preferred material has silica (SiO2), aluminum oxide (Al2O3) and calcirm-fluoride (CaF2) etc..The preparation of passivation layer
Can be realized by technologies such as pulsed laser deposition, magnetron sputtering and thermal evaporation and molecular beam epitaxies.The typical thickness of passivation layer
It is 100 nanometers to tens microns；
Optical substrate requirement in three-dimensional dirac semimetal diffraction grating is transparent in China and foreign countries' spectral region inner height, preferably
Optical substrate have silica (SiO2), GaAs (GaAs), aluminum oxide (Al2O3), calcirm-fluoride (CaF2) and mica etc., lining
Base thickness degree is 0.1-10 millimeters.These optical substrate mature preparation process, surface is smooth, roughness is low, easy cleaning, it is adaptable to
Growing three-dimensional dirac semi-metallic simultaneously carries out optical coating.
Three-dimensional dirac semi-metallic can be grown on the buffer layer using molecular beam epitaxy (MBE).By this side
Formula prepare three-dimensional dirac semi-metallic crystalline quality is high, defect is few, non-linear optical property degree of repeatability is high.
Functional layer is by zero band gap and the three-dimensional dirac semi-metallic with linear energy dispersion relation is constituted so that should
Device can cover the infrared band of long wavelength, and the nonlinear optics parameter such as relaxation time and saturation light intensity height can
Control.As above the feature of the optical switch device is not available for prior art, therefore the device can be realized in infrared band
Stabilization, height are repeated and the pulse of Wavelength tunable control is exported.Can effectively shorten functional layer and diffraction grating are integrated
Laser chamber is long, and the exocoel laser with active-passive lock mould based on three-dimensional dirac semimetal diffraction grating has integrated level high, stable
Property high, operation wavelength it is tunable, be easier obtain high repetition frequency ultrashort pulse the advantages of.
Embodiment 1：Present embodiments provide a kind of design of transoid three-dimensional dirac semimetal diffraction grating 1 high.
With reference to shown in Fig. 1, concrete scheme is as follows：Reflecting layer (3), including the optical coating of golden mirror, silver mirror and aluminium mirror and high reflectance etc.,
Using the direct plated film of the method such as magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation is in optical substrate (4) and then makes
With ultraviolet photolithographic, cushioning layer material is etched the method such as chemical etching and nano impression the periodic structure of striated, is made it have
Diffraction function.The skills such as magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation are reused above reflecting layer (3)
Art prepares cushion (2) and then uses ultraviolet photolithographic, and cushioning layer material is etched striped by the method such as chemical etching and nano impression
The periodic structure of shape, makes it have diffraction function., use the sides such as molecular beam outer extension, ald and chemical vapor deposition
Three-dimensional dirac semimetal of the method in the top of cushion (2) prepares functional layer (1), then using ultraviolet photolithographic, chemistry is carved
Dirac semimetal is etched the method such as erosion and nano impression the periodic structure of striated, makes it have diffraction function.Finally exist
The semimetallic top of dirac is passivated a layer plated film using magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation.
Embodiment 2：Present embodiments provide a kind of design of low transoid three-dimensional dirac semimetal diffraction grating.Tool
Body design, as shown in Fig. 2 concrete scheme is as follows：Dirac semimetal in functional layer (1) is passed through into magnetron sputtering, is swashed
The direct plated films of method such as light pulse deposition electron beam evaporation and thermal evaporation are chemical then using ultraviolet photolithographic in optical substrate (4)
Dirac semimetal is etched the method such as etching and nano impression the periodic structure of striated, makes it have diffraction function.Finally
Layer is passivated in the semimetallic top of dirac using magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation to plate
Film.
Embodiment 3：Present embodiments provide a kind of design of transoid three-dimensional dirac semimetal diffraction grating 2 high.
Specific design scheme, as shown in figure 3, ultraviolet photolithographic is used first in optical substrate (4), the side such as chemical etching and nano impression
Optical substrate is etched method the periodic structure of striated, makes it have diffraction function.Secondly by reflecting layer (3), including golden mirror, silver
Optical coating of mirror and aluminium mirror and high reflectance etc., uses magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation etc.
The direct plated film of method uses ultraviolet photolithographic in optical substrate (4), and the method such as chemical etching and nano impression is by reflector material
The periodic structure of striated is etched, diffraction function is made it have.Then reused above reflecting layer (3) magnetron sputtering,
The technology such as pulsed laser deposition electron beam evaporation and thermal evaporation prepares cushion (2), then using ultraviolet photolithographic, chemical etching and
Cushioning layer material is etched the methods such as nano impression the periodic structure of striated, makes it have diffraction function.Outside using molecular beam
The methods such as extension, ald and chemical vapor deposition three-dimensional Di in the top of cushion (2) prepares functional layer (1) draw
Gram semimetal, finally uses magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation in the semimetallic top of dirac
It is passivated a layer plated film.
Embodiment 4：Present embodiments provide the design of the solid state laser based on three-dimensional dirac semimetal diffraction grating
Scheme.As shown in figure 4, after solid state gain medium (7) is by pumping source (5) pumping, can be by collimation lens (6), three-dimensional dirac
It is infrared in being produced in the resonator of semi-metallic three-dimensional dirac semimetal diffraction grating (9) and output coupling mirror (8) composition
Pulse laser.
Embodiment 5：Present embodiments provide setting for the semiconductor laser based on three-dimensional dirac semimetal diffraction grating
Meter scheme.As shown in figure 5, pumping source (5) generates infrared continuous laser, the continuous light by semiconductor laser cavity on the inside of
After the microcavity that semi-transparent semi-reflecting film and three-dimensional dirac semimetal diffraction grating are formed, it is possible to achieve locked mode adjusts Q, so as to export
Middle pulsed infrared laser.
Embodiment 6：Three-dimensional dirac semimetal diffraction grating can be additionally used in infrared optical fiber pulse laser.As shown in fig. 6,
The pump light that pumping source (5) is produced, gain fibre (12), the infrared light that gain fibre is produced are introduced by wavelength division multiplexer (11)
It is micro- what is be made up of elements such as three-dimensional dirac semimetal diffraction grating (9), fiber optic collimator mirror (13) and half-reflecting half mirrors (6)
Pulse laser is formed in chamber.
Embodiment 7：Three-dimensional dirac semimetal diffraction grating can by the growth time of precise control material, speed and
The conditions such as temperature are designed and adjust the thickness of the diffraction grating functional layer, so as to prepare modulation depth 0.5%-50% scopes
Adjustable infrared optics switching device.
Claims (10)
1. a kind of three-dimensional dirac semimetal diffraction grating, it is characterised in that：Using zero band gap, linear energy dispersion relation three
Dimension dirac semi-metallic covers 2-6 microns of region of ultra-red as diffraction grating groove material, the grating operation wavelength；Device
Part include the diffraction grating functional layer being made up of three-dimensional dirac semi-metallic and carry the functional layer needed for optical element.
2. three-dimensional dirac semimetal diffraction grating according to claim 1, it is characterised in that：Described three-dimensional dirac
Semimetal diffraction grating has high reflectance type and antiradar reflectivity type both of which；Wherein high reflectance type three-dimensional dirac half is golden
Category diffraction grating following material from top to bottom is distributed as：Functional layer (1) and optical element, the optical element is from top to bottom
Cushion (2), reflecting layer (3) and optical substrate (4)；Antiradar reflectivity type three-dimensional dirac semimetal diffraction grating is from top to bottom
Following material be distributed as：Functional layer (1), optical substrate (4).
3. three-dimensional dirac semimetal diffraction grating according to claim 2, it is characterised in that：Described functional layer (1)
Comprising three-dimensional dirac semi-metallic and passivation layer；Wherein three-dimensional dirac semi-metallic is a kind of broadband nonlinear optics
Material, has optical switch performance, including Cadmium arsenide (Cd in IR regions3As2), bismuth sodium (Na3) or telluride zirconium Bi
(ZrTe5) one or more in semi-metallic；The thickness of three-dimensional dirac half metal film is 10 nanometers to 10 microns；It is blunt
Changing layer has protective effect to three-dimensional dirac semi-metallic, improves the stability of device, and passivation material requirement can fitted
Answer various working environments and in operation wavelength highly transparent, passivation material includes silica (SiO2), aluminum oxide (Al2O3)
Or calcirm-fluoride (CaF2)；The preparation of passivation layer is realized by pulsed laser deposition, magnetron sputtering or thermal evaporation and molecular beam epitaxy；
The thickness of passivation layer is 100 nanometers to 20 microns.
4. three-dimensional dirac semimetal diffraction grating according to claim 2, it is characterised in that：Described functional layer (1)
With parallel reticle structure, the reticle structure can make light that dispersion occurs, and realize the optical electivity function of diffraction grating；By adjusting
Whole incisure density, can finely tune the operation wavelength of three-dimensional dirac semimetal diffraction grating, modulation depth, the various optics of saturation light intensity
The line width of parameter and mode locking pulse；The preparation method of reticle structure has ultraviolet photolithographic, chemical etching or nano impression.
5. three-dimensional dirac semimetal diffraction grating according to claim 2, it is characterised in that：Described cushion (2)
There is transmissivity very high, including GaAs (GaAs), carborundum (SiC) and aluminum oxide (Al in operating wavelength range2O3),
Cushion is prepared by technologies such as chemical vapor deposition, ald, magnetron sputtering, thermal evaporation or pulsed laser depositions.
6. three-dimensional dirac semimetal diffraction grating according to claim 2, it is characterised in that：Three-dimensional dirac semimetal
Reflecting layer (3) in diffraction grating can be the metallic reflection film in broadband, including golden film, silverskin and aluminium film etc.；Can also be
The deielectric-coating of high reflectance.
7. three-dimensional dirac semimetal diffraction grating according to claim 2, it is characterised in that：Wherein, described optics
Substrate (4) requirement is transparent in outer spectral region inner height, and optical substrate has silica (SiO2), aluminum oxide (Al2O3), fluorination
Calcium (CaF2) or mica (Mica).
8. according to the preparation method of the three-dimensional dirac semimetal diffraction grating of claim 2,3, it is characterised in that：Described function
Layer (1) is by three-dimensional dirac semi-metallic by multiple coating films such as molecular beam epitaxy, ald or chemical vapor depositions
Method is grown；Cd3As2The condition of membrane molecular beam epitaxy growth is as follows：Using purity be~99.999% (5N) cadmium source and
Arsenic source, Cd is grown under conditions of ultrahigh vacuum, underlayer temperature are about 200 DEG C3As2Film；The growth course of film uses high energy
Electron reflection (RHEED) in-situ monitoring, growth rate is~1 nm/minute.
9. method according to claim 8, it is characterized in that by the growth time of precise control material, speed and temperature etc.
Condition is designed and adjusts the nonlinear optics parameter of the diffraction grating functional layer, so as to prepare the infrared light of different modulating depth
Learn switching device；By controlling growth conditions, the optical parametric intrinsic to three-dimensional dirac semi-metallic regulates and controls, doping
Unit have Cr, In, Na or K.
10. the three-dimensional dirac semimetal diffraction grating that what one of claim 1-9 was described be prepared into is in cavity semiconductor pulse
Application in laser, exocoel solid pulse laser, exocoel fiber pulse laser.
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| CN108063364A (en) * | 2018-01-05 | 2018-05-22 | 南京大学 | Semiconductor exocoel mode-locked laser based on Cadmium arsenide's material |
| CN109586154A (en) * | 2019-01-08 | 2019-04-05 | 南京大学 | Pulse condition tunable laser based on three-dimensional dirac semimetal saturable absorber |
| CN111262043A (en) * | 2018-12-03 | 2020-06-09 | 桂林电子科技大学 | Terahertz adjustable wave absorber based on Dirac semimetal |
| CN114442213A (en) * | 2022-03-10 | 2022-05-06 | 江苏微导纳米科技股份有限公司 | Optical device, naked eye 3D display device and method for improving optical device performance tolerance |
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