CN106772733B - Three-dimensional dirac semimetal diffraction grating - Google Patents
Three-dimensional dirac semimetal diffraction grating Download PDFInfo
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- CN106772733B CN106772733B CN201611214747.2A CN201611214747A CN106772733B CN 106772733 B CN106772733 B CN 106772733B CN 201611214747 A CN201611214747 A CN 201611214747A CN 106772733 B CN106772733 B CN 106772733B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1814—Diffraction gratings structurally combined with one or more further optical elements, e.g. lenses, mirrors, prisms or other diffraction gratings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1861—Reflection gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
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Abstract
A kind of three-dimensional dirac semimetal diffraction grating, use the three-dimensional dirac semi-metallic of zero band gap, linear energy dispersion relation as diffraction grating groove material, the grating operation wavelength covers 2-6 microns of infrared region, a variety of nonlinear optics Parameter adjustable controls；Optical element needed for device includes the diffraction grating functional layer being made of three-dimensional dirac semi-metallic and carries the functional layer.There is the three-dimensional dirac semimetal diffraction grating high reflectance type and antiradar reflectivity type both of which one kind to be based on the semimetallic diffraction grating device of three-dimensional dirac.The present invention also provides the concrete schemes of the tunable infrared pulsed lasers of saturable absorption (or ultra-fast optical switch) characteristic generation wavelength using the three-dimensional dirac semimetal diffraction grating.
Description
Technical field
The present invention relates to diffraction grating, it is based especially on infrared three-dimensional dirac half in three-dimensional dirac semi-metallic
Metal diffraction grating belongs to optical technical field.
Background technique
Infrared ultra-short pulse laser source is that active advanced subject is studied in non-linear optical field, in communication, medicine, outer
Value that section performs the operation and the fields such as molecular spectrum are all widely used.The generation of middle pulsed infrared laser mainly has actively and passively two
Kind mode, wherein passive mode is not necessarily to external electronic controller part due to having, and the pulse generated is shorter, so by people blueness
It looks at.
Optical switch device and diffraction grating are core two for realizing outside cavity gas laser passive mode pulse laser and generating
Primary Component.The absorptivity of optical switch device increases with incident optical power and is reduced, and has significant optical switch feature,
It is the necessary device of laser passive mode-locking.Carbon nanotube, graphene, black phosphorus, two-dimentional transient metal sulfide, quasi- two-dimensional topology
Although the low-dimension nano materials such as insulator have outstanding Reflection Optical Thin Film switching characteristic, but in the preparation frequently with liquid phase removing or after
Transfer method, in device there are a large amount of defect states, be difficult to control material crystalline quality, nonlinear optics parameter and repeatability.
Diffraction grating has wavelength alternative, is the core devices of Wavelength-tunable external cavity laser.Comparative maturity at present
Extenal cavity tunable laser with active-passive lock mould the intracavitary material for existing simultaneously such as carbon nanotube, graphene etc as optics
Switch and the diffraction grating for realizing tunable wave length.Use low-dimension nano material as the exocoel passive mode-locking laser of optical switch
Device intraluminal device is more, structure is complicated, and it is inevitable to lead to that this clamping system integrated level is low, stability is poor, energy loss is big etc.
The shortcomings that.It is long that laser chamber is elongated while optical switch and diffraction grating separately work, and causes to be difficult to obtain repetition rate height
Stable mode-locking pulse.This status makes pulsed infrared laser be difficult to generate and optimize, and is far from satisfying people to infrared lock
The demand of mould pulse laser.
Summary of the invention
In order to solve problem above, a kind of the object of the present invention is to provide integrated levels high, reliable, Parameter adjustable
The three-dimensional dirac semimetal echelette diffraction grating of control.It, can using three-dimensional dirac semimetal diffraction grating provided by the invention
To realize the mode locking of mid-infrared laser device wide spectral range or adjust Q, to generate stabilization, tunable wave length, highly repeatable
High power pulse laser output.The present invention is also specifically provided to be drawn about three-dimensional Di infrared in three-dimensional dirac semi-metallic
The technical solution of gram semimetal diffraction grating mode locking or Q-switched pulse laser.
The technical solution for realizing the aim of the invention is as follows: a kind of three-dimensional dirac semimetal diffraction grating, feature exist
In: use the three-dimensional dirac semi-metallic of zero band gap, linear energy dispersion relation as diffraction grating groove material, the light
Grid operation wavelength covers 2-6 microns of infrared region, a variety of nonlinear optics Parameter adjustable controls；Device includes by three-dimensional dirac
The diffraction grating functional layer that semi-metallic is constituted and optical element needed for the carrying functional layer.
The three-dimensional dirac semimetal diffraction grating has high reflectance type and antiradar reflectivity type both of which；Wherein
The following material distribution of high reflectance type three-dimensional dirac semimetal diffraction grating from top to bottom are as follows: functional layer (1) and optics member
Part, the optical element are from top to bottom buffer layer (2), reflecting layer (3) and optical substrate (4)；Antiradar reflectivity type three-dimensional Di draws
The following material distribution of gram semimetal diffraction grating from top to bottom are as follows: functional layer (1), optical substrate (4).
The functional layer (1) includes three-dimensional dirac semi-metallic and passivation layer；Wherein three-dimensional dirac semimetal
Material is a kind of broadband nonlinear optical material, has good optical switch performance in IR regions, can select arsenic
Cadmium (Cd3As2), bismuth sodium (Na3Bi), telluride zirconium (ZrTe5) etc. one or more of semi-metallics；Three-dimensional dirac
The typical thickness of half metal film is 10 nanometers to 10 microns；Passivation layer there is protection to make three-dimensional dirac semi-metallic
With can be improved the stability of device, material requirements is adapting to various working environments and in operation wavelength highly transparent, blunt
Changing layer material includes silica (SiO2), aluminium oxide (Al2O3) or calcirm-fluoride (CaF2) etc.；The preparation of passivation layer can pass through
The technologies such as pulsed laser deposition, magnetron sputtering and thermal evaporation and molecular beam epitaxy are realized；The typical thickness of passivation layer is 100 nanometers
To 20 microns；
The functional layer (1) has parallel reticle structure, which can make light that dispersion occur, and realizes diffraction light
The optical electivity function of grid；By adjusting incisure density (200-600lines/mm), three-dimensional dirac semimetal can also be finely tuned
The operation wavelength of diffraction grating, the line width of a variety of optical parameters such as modulation depth, saturation light intensity and mode locking pulse；Reticle structure
Preparation method have ultraviolet photolithographic, chemical etching and nano impression etc..
The buffer layer (2) has very high transmissivity in operating wavelength range, and preferred material is GaAs
(GaAs), silicon carbide (SiC) and aluminium oxide (Al2O3) etc., buffer layer can pass through chemical vapor deposition, atomic layer deposition, magnetic control
The preparation of the technologies such as sputtering, thermal evaporation and pulsed laser deposition.
Reflecting layer (3) in three-dimensional dirac semimetal diffraction grating can be the metallic reflection film in broadband, including gold
Film, silverskin and aluminium film etc.；It is also possible to the deielectric-coating of high reflectance.
Wherein, the optical substrate (4) requires transparent in outer spectral region inner height, and preferred optical substrate has dioxy
SiClx (SiO2), aluminium oxide (Al2O3), calcirm-fluoride (CaF2) and mica (Mica) etc..Substrate thickness is 0.1-10 millimeters.
The i.e. three-dimensional dirac semi-metallic of the functional layer (1) can by molecular beam epitaxy, atomic layer deposition and
The multiple coating films method such as chemical vapor deposition is grown；Preferred growth technique is molecular beam epitaxy, is grown using the technique
Three-dimensional dirac half metal film is high-quality, crystallinity is high；Cd3As2The condition of membrane molecular beam epitaxy growth is as follows: using
Purity is~99.999% (5N) cadmium source and arsenic source, grows Cd under conditions of ultrahigh vacuum, underlayer temperature are about 200 DEG C3As2
Film；High energy electron reflection (RHEED) in-situ monitoring can be used in the growth course of film, and a typical growth rate is~
1 nm/minute.
The diffraction grating function is designed and adjusted by conditions such as the growth time, rate and the temperature that accurately control material
The nonlinear optics parameter of layer, to prepare the infrared optics switching device of different modulating depth；It, can by controlling growth conditions
Regulated and controled with the optical parameter intrinsic to three-dimensional dirac semi-metallic, preferred doped chemical has Cr, In, Na and K etc..
Above-mentioned three-dimensional dirac semimetal diffraction grating is in cavity semiconductor pulse laser, exocoel solid laser
Application in device, exocoel fiber pulse laser.
The preparation method of three-dimensional dirac semimetal diffraction grating, reflecting layer (3), including golden mirror, silver mirror and aluminium mirror or height
The optical coating etc. of reflectivity uses the direct plated film of the methods of magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation
In optical substrate (4), and ultraviolet photolithographic is used, reflector material is etched striated by the methods of chemical etching and nano impression
Periodic structure makes it have diffraction function.Then magnetron sputtering, pulsed laser deposition are reused above reflecting layer (3)
The technologies such as electron beam evaporation and thermal evaporation are prepared buffer layer (2), and use ultraviolet photolithographic, the methods of chemical etching and nano impression
By the periodic structure of cushioning layer material etching striated, diffraction function is made it have.Using molecular beam epitaxy, atomic layer deposition and
Three-dimensional dirac semimetal of the methods of the chemical vapor deposition in the top of buffer layer (2) preparation functional layer (1), then uses
Ultraviolet photolithographic, the methods of chemical etching and nano impression make it have the periodic structure of dirac semimetal etching striated
Diffraction function.Finally magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation are used in the semimetallic top of dirac
It is passivated a layer plated film.
Wherein, an illustrative preparation flow is: being received using thermal evaporation in the side of calcium fluoride substrate (4) vapor deposition 500
The thick golden film of rice then reuses pulsed laser deposition and prepares the aluminum oxide film of 100 nanometer thickness as slow as reflecting layer (3)
Rush layer (2), using 400 nanometer thickness of molecular beam epitaxial growth three-dimensional dirac semimetal Cadmium arsenide and using ultraviolet photolithographic by its
It is etched into the striated structure of period shape, finally reuses 100 nanometers of pulsed laser deposition system of aluminium oxide as passivation layer.
During using molecular beam epitaxial growth three-dimensional dirac semi-metallic, by the growth for accurately controlling material
The conditions such as time, rate and temperature design and adjust the nonlinear optics parameter of the diffraction grating functional layer, so that preparation is not
The infrared optics switching device of same modulation depth, nonlinear loss.It, can be to half gold of three-dimensional dirac by controlling growth conditions
Belong to the intrinsic optical parameter of material to be regulated and controled, preferred doped chemical has Cr, In, Na and K etc..
Three-dimensional dirac semimetal diffraction grating is in cavity semiconductor pulse laser, exocoel solid pulse laser, outer
Application in chamber fiber pulse laser.
Beneficial effect, three-dimensional dirac semimetal diffraction grating provided by the invention are compared with prior art, significant excellent
Point is that functional layer is by zero band gap and the three-dimensional dirac semi-metallic with linear energy dispersion relation forms, so that should
Device can cover the infrared band of long wavelength, and the nonlinear opticses parameter height such as relaxation time and saturation light intensity can
Control.The feature as above of the optical switch device is not available for the prior art, therefore the device can be realized in infrared band
Stablize, height is repeatable and the pulse output of Wavelength tunable control.Functional layer is integrated and can effectively be shortened with diffraction grating
Laser chamber is long, exocoel passive mode-locking/Q-switched laser based on three-dimensional dirac semimetal diffraction grating have integrated level it is high,
Stability is high, operation wavelength is tunable, is easier the advantages that obtaining high repetition frequency ultrashort pulse.
Detailed description of the invention
Fig. 1 is the schematic diagram of high transoid three-dimensional dirac semimetal diffraction grating 1 in embodiment 1.
Fig. 2 is the schematic diagram of low transoid three-dimensional dirac semimetal diffraction grating in embodiment 2.
Fig. 3 is the schematic diagram of high transoid three-dimensional dirac semimetal diffraction grating 2 in embodiment 3.
Fig. 4 is showing for the middle infrared solid pulse laser based on three-dimensional dirac semimetal diffraction grating in embodiment 4
It is intended to.
Fig. 5 is the middle infrared semiconductor pulse laser in embodiment 5 based on three-dimensional dirac semimetal diffraction grating
Schematic diagram.
Fig. 6 is showing for the mid-infrared light fibre pulse laser based on three-dimensional dirac semimetal diffraction grating in embodiment 6
It is intended to.
Specific embodiment
Present invention is further described in detail with reference to the accompanying drawing.
Functional layer is three-dimensional dirac semi-metallic, includes three-dimensional dirac semi-metallic and passivation layer.Wherein three
Tieing up dirac semi-metallic is a kind of wide range nonlinear optical material, has good optical switch in IR regions
Can, Cadmium arsenide (Cd can be selected3As2), bismuth sodium (Na3Bi), telluride zirconium (ZrTe5) etc. one or more of semi-metallics.
The typical thickness of three-dimensional dirac half metal film is 10 nanometers and arrives several microns；Passivation layer is to three dirac semi-metallics
With protective effect, the stability of device can be improved, material requirements is adapting to various working environments and in operation wavelength
Highly transparent, preferred material have silica (SiO2), aluminium oxide (Al2O3) and calcirm-fluoride (CaF2) etc..The preparation of passivation layer
It can be realized by technologies such as pulsed laser deposition, magnetron sputtering and thermal evaporation and molecular beam epitaxies.The typical thickness of passivation layer
For 100 nanometers to tens microns；
Optical substrate requirement in three-dimensional dirac semimetal diffraction grating is transparent in China and foreign countries' spectral region inner height, preferably
Optical substrate have silica (SiO2), GaAs (GaAs), aluminium oxide (Al2O3), calcirm-fluoride (CaF2) and mica etc., lining
Base thickness degree is 0.1-10 millimeters.These optical substrate mature preparation process, surface is smooth, roughness is low, easy to clean, is suitable for
Growing three-dimensional dirac semi-metallic simultaneously carries out optical coating.
Molecular beam epitaxy (MBE) growth can be used on the buffer layer in three-dimensional dirac semi-metallic.Pass through this side
The three-dimensional dirac semi-metallic crystalline quality of formula preparation is high, defect is few, and non-linear optical property degree of repeatability is high.
Functional layer is by zero band gap and the three-dimensional dirac semi-metallic with linear energy dispersion relation forms, so that should
Device can cover the infrared band of long wavelength, and the nonlinear opticses parameter height such as relaxation time and saturation light intensity can
Control.The feature as above of the optical switch device is not available for the prior art, therefore the device can be realized in infrared band
Stablize, height is repeatable and the pulse output of Wavelength tunable control.Functional layer is integrated and can effectively be shortened with diffraction grating
Laser chamber is long, and the exocoel laser with active-passive lock mould based on three-dimensional dirac semimetal diffraction grating has integrated level high, stable
Property it is high, operation wavelength is tunable, is easier the advantages that obtaining high repetition frequency ultrashort pulse.
Embodiment 1: a kind of design scheme of high transoid three-dimensional dirac semimetal diffraction grating 1 is present embodiments provided.
As shown in connection with fig. 1, concrete scheme is as follows: reflecting layer (3), including golden mirror, silver mirror and aluminium mirror and the optical coating of high reflectance etc.,
Then made using the methods of magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation directly plated film in optical substrate (4)
With ultraviolet photolithographic, the methods of chemical etching and nano impression make it have the periodic structure of cushioning layer material etching striated
Diffraction function.The skills such as magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation are reused above reflecting layer (3)
Art prepares buffer layer (2) then using ultraviolet photolithographic, and cushioning layer material is etched striped by the methods of chemical etching and nano impression
The periodic structure of shape makes it have diffraction function., use the side such as extension, atomic layer deposition and chemical vapor deposition outside molecular beam
Three-dimensional dirac semimetal of the method in the top of buffer layer (2) preparation functional layer (1), then uses ultraviolet photolithographic, and chemistry is carved
The periodic structure of dirac semimetal etching striated is made it have diffraction function by the methods of erosion and nano impression.Finally exist
The semimetallic top of dirac is passivated a layer plated film using magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation.
Embodiment 2: a kind of design scheme of low transoid three-dimensional dirac semimetal diffraction grating is present embodiments provided.Tool
Body design scheme, as shown in Fig. 2, concrete scheme is as follows: the dirac semimetal in functional layer (1) being passed through magnetron sputtering, is swashed
Light pulse deposits the methods of electron beam evaporation and thermal evaporation directly plated film in optical substrate (4), then uses ultraviolet photolithographic, chemistry
The periodic structure of dirac semimetal etching striated is made it have diffraction function by the methods of etching and nano impression.Finally
Layer is passivated using magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation in the semimetallic top of dirac to plate
Film.
Embodiment 3: a kind of design scheme of high transoid three-dimensional dirac semimetal diffraction grating 2 is present embodiments provided.
Specific design scheme, as shown in figure 3, ultraviolet photolithographic is used first on optical substrate (4), the side such as chemical etching and nano impression
The periodic structure of optical substrate etching striated is made it have diffraction function by method.Secondly by reflecting layer (3), including golden mirror, silver
Mirror and aluminium mirror and the optical coating of high reflectance etc. use magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation etc.
The direct plated film of method uses ultraviolet photolithographic in optical substrate (4), and the methods of chemical etching and nano impression are by reflector material
The periodic structure for etching striated, makes it have diffraction function.Then reused above reflecting layer (3) magnetron sputtering,
The technologies such as pulsed laser deposition electron beam evaporation and thermal evaporation prepare buffer layer (2), then use ultraviolet photolithographic, chemical etching and
The periodic structure of cushioning layer material etching striated is made it have diffraction function by the methods of nano impression.Outside using molecular beam
The three-dimensional Di of the methods of extension, atomic layer deposition and chemical vapor deposition in the top of buffer layer (2) preparation functional layer (1) draws
Gram semimetal finally uses magnetron sputtering, pulsed laser deposition electron beam evaporation and thermal evaporation in the semimetallic top of dirac
It is passivated a layer plated film.
Embodiment 4: the design of the solid state laser based on three-dimensional dirac semimetal diffraction grating is present embodiments provided
Scheme.As shown in figure 4, after solid state gain medium (7) is pumped by pumping source (5), it can be by collimation lens (6), three-dimensional dirac
It is infrared in being generated in the resonant cavity of semi-metallic three-dimensional dirac semimetal diffraction grating (9) and output coupling mirror (8) composition
Pulse laser.
Embodiment 5: setting for the semiconductor laser based on three-dimensional dirac semimetal diffraction grating is present embodiments provided
Meter scheme.As shown in figure 5, pumping source (5) produces infrared continuous laser, the continuous light is by the inside of semiconductor laser cavity
After the microcavity that semi-transparent semi-reflecting film and three-dimensional dirac semimetal diffraction grating are formed, mode locking may be implemented or adjust Q, to export
Middle pulsed infrared laser.
Embodiment 6: three-dimensional dirac semimetal diffraction grating can also be used in infrared optical fiber pulse laser.As shown in fig. 6,
The pump light that pumping source (5) generates introduces gain fibre (12) by wavelength division multiplexer (11), the infrared light that gain fibre generates
It is micro- being made of elements such as three-dimensional dirac semimetal diffraction grating (9), fiber optic collimator mirror (13) and half-reflecting half mirrors (6)
Pulse laser is formed in chamber.
Embodiment 7: three-dimensional dirac semimetal diffraction grating can by accurately control the growth time of material, rate and
The conditions such as temperature design and adjust the thickness of the diffraction grating functional layer, to prepare modulation depth 0.5%-50% range
Adjustable infrared optics switching device.
Claims (8)
1. a kind of three-dimensional dirac semimetal diffraction grating, it is characterised in that: using zero band gap, linear energy dispersion relation three
Dirac semi-metallic is tieed up as diffraction grating groove material, which covers 2-6 microns of infrared region；Device
Part includes the diffraction grating functional layer being made of three-dimensional dirac semi-metallic and passivation layer and carries needed for the functional layer
Optical element；
The three-dimensional dirac semimetal diffraction grating has high reflectance type and antiradar reflectivity type both of which；It is wherein high anti-
Penetrate the following material distribution of rate type three-dimensional dirac semimetal diffraction grating from top to bottom are as follows: functional layer (1) and optical element, institute
Stating optical element is from top to bottom buffer layer (2), reflecting layer (3) and optical substrate (4)；Antiradar reflectivity type three-dimensional dirac half
The following material distribution of Metal diffraction grating from top to bottom are as follows: functional layer (1), optical substrate (4)；
The functional layer (1) includes three-dimensional dirac semi-metallic and passivation layer；Wherein three-dimensional dirac semi-metallic
It is a kind of broadband nonlinear optical material, there is optical switch performance, including Cadmium arsenide (Cd in IR regions3As2), bismuth
Change sodium (Na3) or telluride zirconium (ZrTe Bi5One or more of) semi-metallic；The thickness of three-dimensional dirac half metal film
It is 10 nanometers to 10 microns；Passivation layer has protective effect to three-dimensional dirac semi-metallic, improves the stability of device, blunt
Change layer material adapts to various working environments and in operation wavelength highly transparent, and passivation material includes silica (SiO2),
Aluminium oxide (Al2O3) or calcirm-fluoride (CaF2)；The preparation of passivation layer is by pulsed laser deposition, magnetron sputtering or thermal evaporation and divides
Beamlet extension is realized；Passivation layer with a thickness of 100 nanometers to 20 microns.
2. three-dimensional dirac semimetal diffraction grating according to claim 1, it is characterised in that: the functional layer (1)
With parallel reticle structure, which can make light that dispersion occur, and realize the optical electivity function of diffraction grating；By adjusting
Incisure density can finely tune the operation wavelength, modulation depth, the saturation a variety of Optical Parametrics of light intensity of three-dimensional dirac semimetal diffraction grating
Several and mode locking pulse line width；The preparation method of reticle structure has ultraviolet photolithographic, chemical etching or nano impression.
3. three-dimensional dirac semimetal diffraction grating according to claim 1, it is characterised in that: the buffer layer (2)
There is high transmissivity in operating wavelength range, buffer layer includes GaAs (GaAs), silicon carbide (SiC) or aluminium oxide
(Al2O3), buffer layer passes through chemical vapor deposition, atomic layer deposition, magnetron sputtering, thermal evaporation or pulsed laser deposition technology system
It is standby.
4. three-dimensional dirac semimetal diffraction grating according to claim 1, it is characterised in that: three-dimensional dirac semimetal
Reflecting layer (3) in diffraction grating is the metallic reflection film in broadband, including golden film, silverskin or aluminium film；Or high reflectance
Deielectric-coating.
5. three-dimensional dirac semimetal diffraction grating according to claim 1, it is characterised in that: wherein, the optics
Substrate (4) requirement is transparent in infrared range of spectrum inner height, and optical substrate has silica (SiO2), aluminium oxide (Al2O3), fluorine
Change calcium (CaF2) or mica (Mica).
6. a kind of preparation method of three-dimensional dirac semimetal diffraction grating described in claim 1, it is characterised in that: described
Functional layer (1) passes through molecular beam epitaxy, atomic layer deposition or chemical vapor deposition plated film side by three-dimensional dirac semi-metallic
Method is grown； Cd3As2The condition of membrane molecular beam epitaxy growth is as follows: the use of purity being~99 .999% cadmium sources and arsenic
Source grows Cd under conditions of ultrahigh vacuum, underlayer temperature are about 200 DEG C3As2Film；The growth course of film uses high energy electricity
Son reflection (RHEED) in-situ monitoring, growth rate is 1 nm/minute.
7. preparation method according to claim 6, it is characterized in that passing through the growth time, rate and the temperature that accurately control material
Degree condition designs and adjusts the nonlinear optics parameter of the diffraction grating functional layer, to prepare the infrared of different modulating depth
Optical switch device；By controlling growth conditions, and the optical parameter intrinsic to three-dimensional dirac semi-metallic regulates and controls,
Doped chemical has Cr, In, Na or K.
8. a kind of cavity semiconductor pulse laser, exocoel solid pulse laser or exocoel fiber pulse laser, wherein wrapping
Include claim 1-5 or one of described in three-dimensional dirac semimetal diffraction grating or one of claim 6-7 the method
The three-dimensional dirac semimetal diffraction grating of preparation.
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| CN108063364B (en) * | 2018-01-05 | 2020-06-26 | 南京大学 | Semiconductor external cavity mode-locked laser based on cadmium arsenide material |
| CN111262043A (en) * | 2018-12-03 | 2020-06-09 | 桂林电子科技大学 | Terahertz adjustable wave absorber based on Dirac semimetal |
| CN109586154B (en) * | 2019-01-08 | 2020-10-30 | 南京大学 | Pulse state tunable laser based on three-dimensional Dirac semi-metal saturable absorber |
| CN114442213A (en) * | 2022-03-10 | 2022-05-06 | 江苏微导纳米科技股份有限公司 | Optical device, naked eye 3D display device and method for improving optical device performance tolerance |
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