CN107959224A - A kind of surface phasmon laser based on wire chamber - Google Patents

A kind of surface phasmon laser based on wire chamber Download PDF

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Publication number
CN107959224A
CN107959224A CN201810007648.XA CN201810007648A CN107959224A CN 107959224 A CN107959224 A CN 107959224A CN 201810007648 A CN201810007648 A CN 201810007648A CN 107959224 A CN107959224 A CN 107959224A
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laser
chamber
wire chamber
surface phasmon
layer
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CN107959224B (en
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温秋玲
张家森
徐西鹏
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Huaqiao University
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Huaqiao University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention discloses a kind of surface phasmon laser based on wire chamber, including surface plasmon waveguide and wire chamber.The wire chamber of the present invention is to be embedded in by the use of lithographic technique in surface plasmon waveguide as the resonator of laser, therefore the shape and size of wire chamber accurately control.Due to wire chamber hysteroscope to the reflectivity of surface plasmon mode in chamber more than 90% so that in wire chamber the Q values of surface phasmon laser be up to 1170.The surface phasmon laser of the present invention use resonator of the wire chamber as laser, has that physical size is small, quality factor are big, shape and size accurately control, preparation process simply maturation, working and room temperature, can be compatible with electronic chip the advantages that.

Description

A kind of surface phasmon laser based on wire chamber
Technical field
The present invention relates to a kind of micro laser, and in particular to a kind of surface phasmon laser based on wire chamber.
Background technology
Since half a century, laser towards smaller volume, faster modulating speed, more high-power, higher efficiency etc. Direction develops rapidly.However, conventional semiconductor laser is limited be subject to diffraction limit, either in light field mode sizes still The half-wavelength of light field can not all be surmounted on device physical dimension.Therefore, the size of laser how is further reduced, is future Nanoscale integrated optics chip provides coherent source, realizes the microminiature laser under nanoscale, is always laser technology Field key issue urgently to be resolved hurrily.
Recent research indicate that light field can be limited in sub- ripple by surface phasmon of the local on metal-dielectric interface In long or even deep sub-wavelength dimensions, so as to break through diffraction limit.Nano laser based on surface phasmon is utilized in waveguide Surface plasmon mode realize the three-dimensional limitation and transmission of light field, feed back amplification via resonator and produce and break through diffraction pole The nanometer scale Laser emission of limit.
2009, Zhang Xiang of Univ California-Berkeley et al. was reported one kind and is received based on CdS semiconductors first The surface phasmon laser of rice noodles, its optical mode size ratio diffraction limit are 100 times small.Laser is by a kind of hydridization Type surface plasmon waveguide forms, which is the CdS semiconductor nanowires of a high-gain successively from top to bottom, and 5nm is thick MgF2Clearance for insulation layer and one layer of metal silverskin.This waveguiding structure can be by semiconductor nanowires and metallic silver membrane interface Surface plasmon mode is limited in the MgF of low-refraction2Transmitted in clearance for insulation layer, greatly reduce the pattern in a metal Energy loss, so as to fulfill the remote transmission of surface phasmon ripple.In this laser, nano wire is both that gain is situated between Matter, while two end faces of nano wire form Fabry-Perot (F-P) chamber, the resonator as laser.Propagated along nano wire Surface phasmon ripple, by two end face roundtrips of nano wire, and constantly amplified in transmitting procedure by gain media Finally realize laser lasing.Hereafter, many researchers are made of using this metal film, dielectric and semiconductor nanowires Waveguiding structure realize the surface phasmon laser of various wavelength and Wavelength tunable.However, due to surface phasmon Reflectivity of the ripple in nano wire end face<20%, therefore the reflection loss of this resonator is very big so that it is this to be received based on semiconductor The laser of rice noodles can only work in the environment of ultralow temperature.Further, since nano wire is the methods of passing through chemical vapor deposition Grow out, therefore the physical size of nano wire (i.e. the resonator of laser) and shape are difficult accurately to control.
The content of the invention
Technical problem underlying to be solved by this invention is to provide a kind of surface phasmon laser based on wire chamber Device, which overcomes deficiency existing for the surface phasmon laser based on semiconductor nanowires in background technology, can be accurate Control laser physical size and can be in working and room temperature
In order to solve above-mentioned technical problem, the present invention provides a kind of surface phasmon laser based on wire chamber Device, the laser include surface plasmon waveguide and wire chamber；The surface plasmon waveguide includes being cascading Transparent substrate, metal film layer, the first insulating medium layer, gain media layer, the second insulating medium layer and metal thick film layer； The wire chamber is to be embedded in surface plasmon waveguide to be used as the resonator of laser, the wire chamber by the use of lithographic technique By vertical metal speculum group into and extending to transparent substrate by metal thick film layer.
In a preferred embodiment：The material of the metal thick film layer, metal film layer and wire chamber for gold, silver, aluminium, Any one in copper；The metal film layer was plated by the methods of magnetron sputtering, electron beam evaporation or pulsed laser deposition On a transparent substrate.
In a preferred embodiment：The insulating medium layer is bifluoride magnesium, alundum (Al2O3), silica, lithium fluoride One of them；The thickness of the insulating medium layer is between 5~50nm, between metal film layer and gain media layer.It is logical Cross electron beam evaporation, the method for atomic layer deposition is deposited on metal film layer or gain media layer on.
The gain media layer is semiconductor nano-strip, the semiconductor made by emitting semiconductor in a preferred embodiment One of nano wire, semiconductor-quantum-point or medium mixed with laser dye molecule.The light-emitting semiconducting material can be with Be cadmium selenide, cadmium sulfide, zinc oxide, GaAs, indium gallium nitride and with one kind in gallium arsenide phosphide indium；Mixed with laser dye molecule Medium use rhodamine or fluorescein sodium；Emitting semiconductor passes through chemical vapor deposition (CVD), molecular beam epitaxy (MBE), water The methods of hot method, is grown.Mixed with laser dye molecule medium by the method that is directly incorporated into or spreads by dye molecule Mix in medium.
In a preferred embodiment：The wire chamber is plane-parallel resonator, concavo-convex chamber, flat-concave cavity, circular cavity, triangle One of chamber, quadrangle chamber and polygon chamber.
The preparation of above-mentioned wire chamber is divided into two steps：One is etched in surface plasmon waveguide first with lithographic technique A and region of the same shape and size of hysteroscope；Secondly a layer thickness is deposited on the region after above-mentioned etching and is more than 1 micron Metal film, the region the purpose is to make to be etched are filled up completely full metal so as to form metallic mirror.
Surface phasmon laser works principle proposed by the present invention based on wire chamber is as follows：Pump light is through transparent lining Bottom side is incident on the gain media layer in wire chamber, and energy level occurs after the energy of the Electron absorption photon in gain media layer Transition, the electronics in upper state transfer energy to gain media layer and metallic film bed boundary during ground state is returned On surface plasmon mode, when pumping light power exceed surface plasmon mode lasing threshold when, be excited spoke Penetrate, feeding back amplification via wire chamber produces surface phasmon laser.
Advantages of the present invention：
1. the present invention using wire chamber as resonator, the chamber of the surface plasmon mode of ducting in wire chamber The reflectivity of Jing Chu be more than 90%, this much larger than its nano wire end face reflectivity (<20%), thus by the use of wire chamber as Resonator can effectively reduce the reflection loss of resonator, improve the Q values of laser, so as to reduce swashing for surface phasmon laser Threshold value is penetrated, it is worked at room temperature.
2. the shape and size of resonator can accurately be controlled by lithographic technique.
3. surface plasmon waveguide structure proposed by the present invention can use diamond, carborundum and lithium niobate etc. to have height The transparent material of refractive index can effectively suppress the generation of optical mode in waveguide as substrate.
4. since constraint ability of the wire chamber to electromagnetic field is more stronger than dielectric cavity, and the speculum of wire chamber is situated between than multilayer Volume smaller shared by plasma membrane or photon crystal reflecting mirror, therefore can further reduce using wire chamber the physics ruler of laser It is very little, and this laser based on wire chamber can be compatible with electronic chip well.
5. the present invention sets the insulating medium layer of low-refraction between metal film layer and gain media layer, its purpose exists Preferably it is limited in by the electromagnetic field of surface plasmon mode in waveguide in insulating medium layer, reduces surface phasmon mould Loss of the formula in metal film layer, at the same can to avoid in gain media layer due to be excited light generation photo-generated carrier with Non-radiative recombination occurs for the carrier in metal film layer.
Brief description of the drawings
Fig. 1 is the structure of a specific embodiment of the surface phasmon laser based on wire chamber that the present invention designs Schematic diagram (sectional view)；
Fig. 2 is the optical microphotograph of a specific embodiment of the surface phasmon laser based on wire chamber of the present invention Mirror figure (top view).In figure：1 is surface plasmon waveguide, and 2 be one 12 μm long, 4 μm wide of F-P wire chambers；
Fig. 3 is the scanning electron microscope SEM figures of a specific embodiment of the surface plasmon waveguide of the present invention；
Fig. 4 is a specific embodiment of the surface phasmon laser based on F-P wire chambers of the present invention in difference Emission spectrum under pumping light power density.
Fig. 5 is the typical case of a specific embodiment of the surface phasmon laser based on F-P wire chambers of the present invention Threshold figure.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment, the present invention is further explained.
As depicted in figs. 1 and 2, the surface phasmon laser based on wire chamber of the present embodiment includes：Surface etc. from Excimer waveguide 1 and wire chamber 2；Wherein, surface plasmon waveguide 1 further comprises high refractive index transparent substrate layer 11, metal Film layer 12, insulating medium layer 13, gain media layer 14, insulating medium layer 15 and metal thick film layer 16；Metal film layer 12 plates On transparent substrate 11, insulating medium layer 13 is plated on metal film layer 12, and gain media layer 14 is semiconductor nano-strip, tightly It is attached on the surface of insulating medium layer 13, therebetween gapless, insulating medium layer 15 is plated on gain media layer 14, metal thick film layer 16 are plated on insulating medium layer 15.Wire chamber 2 is by vertical metal speculum group into the top of, metallic mirror and metal thick film layer 16 are connected, and lowermost end is located in substrate layer 11, boundary of the lowermost end of metallic mirror away from substrate layer 11- metal film layers 12 The distance at place is h, h ≈ 130nm in experiment.
Fig. 3 is the scanning electron microscope SEM figures in the surface plasmon waveguide section of the present embodiment.Substrate layer 11 is single Brilliant carborundum (refractive index 2.62), thickness~330 μm, size 10mm × 10mm；The method of deposited by electron beam evaporation is served as a contrast in carborundum The silverskin of 18nm thickness is deposited on bottom as metal film layer 12；The method of deposited by electron beam evaporation is then deposited on metal film layer The bifluoride magnesium of 6nm thickness is as insulating medium layer 13；Cadmium selenide single crystal nano-belt by the use of CVD method growth is used as gain media Layer 14 is positioned on insulating medium layer 13, and the thickness of gain media layer is 50~300nm in this embodiment；Deposited by electron beam evaporation The bifluoride magnesium of 6nm thickness is deposited as insulating medium layer 15 in method on gain media layer；The method of deposited by electron beam evaporation is exhausted The silverskin of 200nm thickness is deposited on edge dielectric layer 15 as metal thick film layer 16.
Pump light is incided in wire chamber on cadmium selenide nano band after object lens focus on from silicon carbide substrates side, cadmium selenide Nanobelt occurs energy level transition after its Electron absorption photon, then passes through the side of resonance energy transfer as gain media layer 14 Formula transfers energy to 14 interface of 14 interface of metal film layer 12- gain medias layer and metal thick film layer 16- gain medias layer Surface plasmon mode, when the power of pump light exceedes the lasing threshold of laser, surface propagated along waveguide etc. is from sharp Meta schema finally produces surface phasmon laser via the feedback amplification of wire chamber.Since the bottom of wire chamber 2 is one layer of gold Belong to thick film layers 16, therefore the surface phasmon laser produced can only be emitted from 11 side of transparent substrate.
Fig. 4 is a specific embodiment (F-P cavity of the surface phasmon laser based on F-P wire chambers of the present invention Size be：12 μm long × 4 μm of wide × 320nm high) under the different pumping power that the measurement of silicon carbide substrates side obtains Emission spectrum, the numeral in left side is the peak power density of pump light in figure, unit GW/cm2.From fig. 4 it can be seen that work as pumping (I when energy is relatively lowpump≈0.43GW/cm2), emission spectrum is a wide fluorescence Spectra (line width~37nm).Work as pumping light power (I when gradually increase is down to just above laser thresholdpump≈1.3GW/cm2), spectrally there is four obvious laser peaks, peak value Wavelength is respectively 691.1,695.5,699.9 and 702.7nm.(I after pumping light power continues increasepump≈1.55GW/cm2 And 1.84GW/cm2), there are more laser peaks on emission spectrum, cause since the peak wavelength at these laser peaks is closely spaced They, which connect together, constitutes a continuous wide spectrum, as pumping light power further increases (Ipump≥2.2GW/cm2), Some new discrete laser peaks are formd again on the right side of laser spectrum.The Q values at the laser peak of arrow meaning reachable 1170 in figure, This is that Q values are maximum in the surface phasmon laser reported at present.
Fig. 5 is a specific embodiment (F-P cavity of the surface phasmon laser based on F-P wire chambers of the present invention Size be：12 μm long × 4 μm of wide × 320nm high) output intensity of surface phasmon laser that measures at room temperature With the variation relation of incident pump light peak power density.The nonlinear response of input-output light intensity indicates surface etc. from sharp The generation of first laser, the threshold value of corresponding surface phasmon laser is about 1.3GW/cm2, this is one and works at room temperature The typical threshold of surface phasmon laser.
The foregoing is merely present pre-ferred embodiments, therefore the technical scope of the present invention cannot be limited according to this, therefore Fan Yiben The equivalent changes and modifications that the technical spirit and description of invention are made, in the range of should all belonging to technical solution of the present invention.

Claims (6)

1. a kind of surface phasmon laser based on wire chamber, it is characterised in that the laser includes surface phasmon Waveguide and wire chamber；The surface plasmon waveguide include be cascading transparent substrate, metal film layer, first Insulating medium layer, gain media layer, the second insulating medium layer and metal thick film layer；The wire chamber is embedded in using lithographic technique Resonator in surface plasmon waveguide as laser, the wire chamber by vertical metal speculum group into, and by Metal thick film layer extends to transparent substrate.
2. surface phasmon laser according to claim 1, it is characterised in that the metal thick film layer, metal foil The material of film layer and wire chamber is any one in gold, silver, aluminium, copper.
3. surface phasmon laser according to claim 1, it is characterised in that the insulating medium layer is bifluoride One of magnesium, alundum (Al2O3), silica, lithium fluoride.
4. surface phasmon laser according to claim 1, it is characterised in that the thickness of the insulating medium layer is 5~50nm.
5. surface phasmon laser according to claim 1, it is characterised in that the gain media layer is by shining Semiconductor nano-strip, semiconductor nanowires, semiconductor-quantum-point or the medium mixed with laser dye molecule of semiconductor fabrication One of them.
6. surface phasmon laser according to claim 1, it is characterised in that the wire chamber is parallel plane One of chamber, concavo-convex chamber, flat-concave cavity, circular cavity, triangular chamber, quadrangle chamber and polygon chamber.
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Cited By (8)

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CN108666865A (en) * 2018-05-09 2018-10-16 华中科技大学 A kind of metal-semiconductor composite construction, SPPs mode of excitation and preparation method
CN108879322A (en) * 2018-06-15 2018-11-23 华侨大学 Semiconductor laser and preparation method thereof based on Metal Microcavity
CN108963739A (en) * 2018-08-01 2018-12-07 东南大学 Tunable wave length twin nuclei phasmon laser based on Super-material antenna
CN109687282A (en) * 2019-02-11 2019-04-26 中国科学院微电子研究所 Three-dimensional metamaterial surface phasmon laser
CN112421377A (en) * 2020-11-18 2021-02-26 广东鸿芯科技有限公司 Anti-light-mixing semiconductor laser and preparation method thereof
CN112636161A (en) * 2020-12-18 2021-04-09 勒威半导体技术(嘉兴)有限公司 Heat dissipation packaging structure with resonant cavity semiconductor laser and packaging method thereof
CN114336280A (en) * 2021-12-20 2022-04-12 华侨大学 Laser controllable output device based on metal cavity surface plasmon and output method thereof
CN114566865A (en) * 2020-11-26 2022-05-31 中国科学院半导体研究所 Surface plasma polarization excimer laser and preparation method and application thereof

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Cited By (13)

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CN108666865B (en) * 2018-05-09 2020-10-02 华中科技大学 Metal-semiconductor composite structure, SPPs excitation mode and preparation method
CN108666865A (en) * 2018-05-09 2018-10-16 华中科技大学 A kind of metal-semiconductor composite construction, SPPs mode of excitation and preparation method
CN108879322A (en) * 2018-06-15 2018-11-23 华侨大学 Semiconductor laser and preparation method thereof based on Metal Microcavity
CN108879322B (en) * 2018-06-15 2023-05-09 华侨大学 Semiconductor laser based on metal microcavity and manufacturing method thereof
CN108963739A (en) * 2018-08-01 2018-12-07 东南大学 Tunable wave length twin nuclei phasmon laser based on Super-material antenna
CN108963739B (en) * 2018-08-01 2020-06-09 东南大学 Wavelength-tunable dual-ring structure plasmon laser based on metamaterial antenna
CN109687282A (en) * 2019-02-11 2019-04-26 中国科学院微电子研究所 Three-dimensional metamaterial surface phasmon laser
CN109687282B (en) * 2019-02-11 2020-08-07 中国科学院微电子研究所 Three-dimensional metamaterial surface plasmon laser
CN112421377A (en) * 2020-11-18 2021-02-26 广东鸿芯科技有限公司 Anti-light-mixing semiconductor laser and preparation method thereof
CN114566865A (en) * 2020-11-26 2022-05-31 中国科学院半导体研究所 Surface plasma polarization excimer laser and preparation method and application thereof
CN112636161A (en) * 2020-12-18 2021-04-09 勒威半导体技术(嘉兴)有限公司 Heat dissipation packaging structure with resonant cavity semiconductor laser and packaging method thereof
CN114336280A (en) * 2021-12-20 2022-04-12 华侨大学 Laser controllable output device based on metal cavity surface plasmon and output method thereof
CN114336280B (en) * 2021-12-20 2024-03-12 华侨大学 Metal cavity surface plasmon-based laser controllable output device and output method thereof

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