CN116337217A - Orbital angular momentum on-chip detector, preparation method, detection device and photon chip - Google Patents
Orbital angular momentum on-chip detector, preparation method, detection device and photon chip Download PDFInfo
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Abstract
The invention discloses an orbital angular momentum on-chip detector, a preparation method, a detection device and a photon chip. The detector on the orbital angular momentum sheet comprises a transparent substrate component and nanowires, wherein a film layer is arranged on the first surface of the transparent substrate component, a plurality of arc-shaped nano slits penetrate through the film layer, the plurality of arc-shaped nano slits form a plasmon super-surface structure, and the plurality of arc-shaped nano slits are arranged at intervals; the number of the nanowires is multiple, the multiple nanowires are arranged on the film layer in a spaced mode, and the nanowires are perovskite nanowires. The detector on the orbital angular momentum sheet selectively excites a single transverse laser mode in the nanowire through the sub-wavelength focusing of the orbital angular momentum plasma field, realizes the detection on the orbital angular momentum sheet of zero-mode crosstalk, and has extremely important significance for all-optical logic gates, ultra-fast optical switches, nano photon detectors and on-chip optical and quantum information processing.
Description
Technical Field
The application relates to the technical field of orbital angular momentum detection, in particular to an orbital angular momentum on-chip detector with zero-mode crosstalk, a preparation method thereof, a detection device and a photon chip.
Background
The integrated photon chip has the advantages of high-speed parallelism and low power consumption by taking photons as information carriers, and is key to the future low power consumption, high speed, wide bandwidth and high capacity information processing capability. The high-performance photonic device is a research hot spot in the current photonic chip field, and the construction and regulation mechanism of the integrable photonic device mainly regulates and utilizes the frequency, wavelength, polarization, mode, service life and other physical dimensions of photons, so how to widen the regulation dimension, communication capacity and bandwidth of the semiconductor nanowire photonic device based on the existing optical interconnection and chip technology is a main challenge and an introduction scientific problem faced by the current integrable photonic device field.
Photon Orbital Angular Momentum (OAM) has physical dimensions with infinite orthogonal characteristics, so that the orbital angular momentum is utilized as a new degree of freedom for information processing, the regulation dimension and communication capacity of a photonic device can be greatly improved, research and development of a high-performance photonic device based on the orbital angular momentum dimension are also emerging directions in the current photon communication field, however, with respect to application research of the orbital angular momentum in the communication field, particularly detection of the orbital angular momentum still needs to use a large-size phase detection element, such as a spiral phase plate, a spatial light modulator and the like, and the high-performance photonic device is difficult to be compatible with a highly integrated photonic chip technology. The on-chip OAM detection technology converts an optical field carrying orbital angular momentum information into a surface plasmon field by utilizing a plasmon metal structure, so that the detection efficiency is very low (-10) because of larger loss caused by inter-band transition in metal -6 ) This prevents further development of the performance of the integrable photonic devices and photonic chips using photonic angular momentum regulation.
Disclosure of Invention
Based on this, it is necessary to provide an on-chip detector of orbital angular momentum with zero mode crosstalk, which is difficult to be compatible with the highly integrated photonic chip technology in the conventional technology, and prevents further development of the performance of the integrated photonic device and the photonic chip by utilizing the photonic angular momentum to regulate and control. The zero-mode crosstalk on-orbital angular momentum on-chip detector selectively excites a single transverse laser mode in the nanowire through sub-wavelength focusing of the orbital angular momentum plasma field, realizes the on-orbital angular momentum on-chip detection of the zero-mode crosstalk, and has extremely important significance for all-optical logic gates, ultrafast optical switches, nano photon detectors and on-chip optical and quantum information processing.
An embodiment of the present application provides an on-chip detector of orbital angular momentum with zero mode crosstalk.
The orbital angular momentum on-chip detector with zero mode crosstalk comprises a transparent substrate component and nanowires, wherein a first surface of the transparent substrate component is provided with a film layer, a plurality of arc-shaped nano slits penetrate through the film layer, the plurality of arc-shaped nano slits form a plasmon super-surface structure, and the plurality of arc-shaped nano slits are arranged at intervals; the number of the nanowires is multiple, the multiple nanowires are arranged on the film layer in a spaced mode, and the nanowires are perovskite nanowires.
In some embodiments, the nano slits are in a semicircular arc shape, a plurality of nano slits of the plasmon super surface structure form concentric arcs, at least one nanowire is respectively arranged on two sides of the circle center of the plasmon super surface structure, and the end part of the nanowire faces the circle center of the plasmon super surface structure.
In some of these embodiments, the nanowires each form an angle of 60 ° to 70 ° with a normal axis of a concentric arc of the plasmonic super-surface structure.
In some of these embodiments, the film layer is a silver film;
and/or the thickness of the film layer is 200-300 nm.
In some of these embodiments, the nanoslit has a depth of 200-300 nm, a width of 150-200 nm, a period of 450-600 nm, an initial radius of 1575-1800 nm, and a depth of 200-300 nm.
In some of these embodiments, the nanowires have a width of 200-1200 nm and a length of 2-30 μm.
The embodiment of the application also provides a preparation method of the zero-mode crosstalk on-orbit angular momentum on-chip detector.
A preparation method of an orbital angular momentum on-chip detector with zero mode crosstalk comprises the following steps:
preparing a film layer; the preparation method of the film layer comprises the following steps: evaporating silver particles onto a transparent substrate component through a thermal evaporation coating system under a vacuum condition to form a film by condensation;
preparing a plasmon super-surface structure on the film layer, wherein the plasmon super-surface is obtained by etching a plurality of arc-shaped nano slits on the film layer by adopting a focused ion beam;
and transferring the nanowire to the preset position of the plasmon super-surface through an optical fiber probe.
In some embodiments, the method for preparing the film layer includes the following steps:
evaporating silver particles to the surface of the transparent substrate part to form a film layer by a thermal evaporation coating system under vacuum condition, wherein the basic vacuum degree of a coating chamber of the thermal evaporation coating system is 2 multiplied by 10 -4 ～3×10 -4 Pa; the evaporation rate of the silver particles is kept between 0.2 and 1nm/s.
In some embodiments, the surface roughness of the quartz substrate is 0.1-0.5 nm; and/or, the purity of the silver particles is more than or equal to 99.999 percent.
In some of these embodiments, the preparation method of the plasmonic super-surface structure includes the following steps:
and carrying out focused plasma etching on the film layer to obtain a plurality of nano slits, wherein the etching voltage is 10 kV-30 kV, the etching current is 2 pA-5 nA, the etching depth is 200-30 nm, the etching width is 150-200 nm, the period is 450-600 nm, and the initial radius is 1575-1800 nm.
In some of these embodiments, the method of preparing the nanowires comprises the steps of: the method is carried out by adopting a chemical vapor deposition method.
In some of these embodiments, the method of preparing the nanowires comprises the steps of:
CsBr powder and PbBr 2 Mixing and placing the powder according to the mass ratio of 1:1Putting into a first porcelain boat, adding SiO 2 Placing a Si substrate in a second porcelain boat, placing the first porcelain boat in the center of a quartz tube, inserting the quartz tube into a tube furnace, placing the second porcelain boat at the edge of a heating wire of the tube furnace for depositing a sample, introducing high-purity argon into the quartz tube as carrier gas, exhausting the high-purity argon in the quartz tube at a flow rate of 1000-1500 sccm for 3-5 min, and then reducing the flow rate to 30-60 sccm to grow the sample; heating the center of the tube furnace from room temperature to 560-630 ℃ within 20-30 min, keeping the temperature for 60-120 min, and keeping the air pressure in the quartz tube at 250-300 Torr; naturally cooling the tube furnace to room temperature to obtain the nanowire with the width of 200-1800 nm and the length of 2-30 mu m.
In some of these embodiments, the method of preparing a nanowire further comprises at least one of the following technical features:
(1) The purity of the CsBr powder is more than or equal to 99.999%;
(2) The PbBr 2 The purity of the powder is more than or equal to 99.999 percent;
(3) The purity of the high-purity argon is more than or equal to 99.999 percent.
In some of these embodiments, the method of preparing a nanowire further comprises at least one of the following technical features:
(1) When the sample is grown, the flow rate is reduced to 40sccm;
(2) The center of the tube furnace was heated from room temperature to 580 ℃ in 20 min;
(3) The holding time is 80min;
(4) The gas pressure in the quartz tube was maintained at 260Torr.
An embodiment of the application also provides a detection device.
A detection device is used for on-orbit angular momentum sheet detection and comprises a pumping light source, a spatial light modulator and an on-orbit angular momentum sheet detector with zero mode crosstalk, wherein the pumping light source is used for providing a light source, and the spatial light modulator is used for modulating a Gaussian beam of the pumping light source into an arbitrary orbital angular momentum beam.
In some of these embodiments, the orbital angular momentum beam modulated by the spatial light modulator is converted to a surface plasmon field via a plasmonic super surface and excites the nanowire transverse laser mode in a specific orbital angular momentum mode
In some embodiments, the wavelength of the pump light source is 470-500 nm.
An embodiment of the application also provides a photonic chip.
A photonic chip includes an orbital angular momentum on-chip detector of zero mode crosstalk.
The detector on the orbital angular momentum sheet with zero mode crosstalk selectively excites a single transverse laser mode in the nanowire through the sub-wavelength focusing of the orbital angular momentum plasma field, thereby realizing the detection on the orbital angular momentum sheet with zero mode crosstalk. According to the invention, the plasmon super-surface structure is combined with the semiconductor nanowire, so that the micro-nano-sized zero-mode crosstalk orbital angular momentum on-chip detector is successfully prepared, the difficult problems of decoding and detection on an OAM multiplexing signal chip are effectively solved, and the application value of photon orbital angular momentum in the field of photon chips is promoted.
In the detection device, the pumping light of the pumping light source is converted into the orbital angular momentum light beam through the spatial light modulator, the orbital angular momentum light beam is focused on the back of the plasmon super-surface through the 10-time objective lens, the plasmon super-front orbital angular momentum field is converted into the plasmon field to selectively excite the nanowire, and after the 100-time objective lens collects signals, photoluminescence signals of the nanowire can be monitored in real time through a microscope (for example, a WITec alpha-300 confocal microscope is selected).
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that are required to be used in the description of the embodiments will be briefly described below. It is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort to a person skilled in the art.
For a more complete understanding of the present application and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings. Wherein like reference numerals refer to like parts throughout the following description.
FIG. 1 is a schematic diagram of an on-chip detector with zero-mode crosstalk according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a method for preparing and transferring an on-chip detector of orbital angular momentum with zero mode crosstalk according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of an on-chip detection device with zero-mode crosstalk according to an embodiment of the present invention;
FIG. 4 is a simulation of electric field distribution of an on-chip detector of orbital angular momentum with zero mode crosstalk according to an embodiment of the present invention;
FIG. 5 (a) is an SEM photograph of a zero mode crosstalk orbital angular momentum on-chip detector prepared according to example 1 of the present invention;
FIG. 5 (b) is a dark field photograph of an on-chip detector of zero mode crosstalk prepared in example 1 when excited at 470nm wavelength;
FIG. 6 is a spectrum signal collected by an on-chip detector of the orbital angular momentum of zero mode crosstalk prepared in example 1 of the present invention;
FIG. 7 is a reflection spectrum of a simulated plasmonic super surface structure of example 2 of the present invention;
FIG. 8 is an electric field simulation of the plasmonic super-surface structure of different periods obtained in example 2 of the present invention;
FIG. 9 shows the y-z plane electric field distribution of the nanowire and plasmonic field obtained in example 2 of the present invention at different distances;
fig. 10 is a graph showing laser threshold statistics of nanowires of different widths obtained in example 3 of the present invention.
Description of the reference numerals
10. Zero mode crosstalk orbital angular momentum on-chip detector; 100. a film layer; 101. a nano slit; 200. a nanowire.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present invention, the meaning of a number is one or more, the meaning of a number is two or more, and greater than, less than, exceeding, etc. are understood to exclude the present number, and the meaning of a number is understood to include the present number. The description of the first and second is for the purpose of distinguishing between technical features only and should not be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The embodiment of the application provides an on-chip detector 10 with zero-mode crosstalk orbital angular momentum, so as to solve the problem that the orbital angular momentum is difficult to be compatible with a highly integrated photonic chip technology in the prior art, and prevent the further development of the performance of an integrable photonic device and a photonic chip from being regulated and controlled by using the photonic angular momentum. The zero mode crosstalk on-chip detector 10 will be described below with reference to the accompanying drawings.
Referring to fig. 1, an exemplary embodiment of an on-orbital angular momentum detector 10 with zero mode crosstalk according to the present application is shown in fig. 1, where fig. 1 is a schematic structural diagram of the on-orbital angular momentum detector 10 with zero mode crosstalk according to the present application. The zero-mode crosstalk orbital angular momentum on-chip detector 10 can be used for chip preparation application, and has extremely important significance for all-optical logic gates, ultra-fast optical switches, nano photon detectors and on-chip optical and quantum information processing.
In order to more clearly illustrate the structure of the zero-mode crosstalk on-orbital angular momentum on-chip detector 10, the zero-mode crosstalk on-orbital angular momentum on-chip detector 10 will be described below with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an on-chip detector 10 with zero-mode crosstalk according to an embodiment of the present application.
An embodiment of the present application provides an orbital angular momentum on-chip detector 10 with zero mode crosstalk.
The detector 10 comprises a transparent substrate component and nanowires 200, wherein a first surface of the transparent substrate component is provided with a film layer 100, a plurality of arc-shaped nano slits 101 penetrate through the film layer 100, the plurality of arc-shaped nano slits 101 form a plasmon super-surface structure, and the plurality of arc-shaped nano slits 101 are arranged at intervals; the number of the nanowires 200 is plural, the plural nanowires 200 are arranged on the film layer 100 at intervals, and the nanowires 200 are perovskite nanowires 200.
Wherein the transparent base member may be a quartz substrate.
In some of these embodiments, the nanowire 200 is a perovskite nanowire 200.
The above-mentioned zero-mode crosstalk on-orbital angular momentum on-chip detector 10 selectively excites a single transverse laser mode in the nanowire 200 by sub-wavelength focusing of the orbital angular momentum plasma field, thereby realizing the on-orbital angular momentum on-chip detection of zero-mode crosstalk. The invention successfully prepares the orbital angular momentum on-chip detector 10 of zero-mode crosstalk with micro-nano size by combining the plasmon super-surface structure with the semiconductor nanowire 200, effectively solves the difficult problems of decoding and detection on an OAM multiplexing signal chip, and promotes the application value of photon orbital angular momentum in the field of photon chips.
In some embodiments, the nano-slits 101 are in a semicircular arc shape, and the plurality of nano-slits 101 of the plasmon super-surface structure form concentric arcs, that is, the radius of the nano-slits 101 gradually increases from inside to outside, and the nano-slits are in an arithmetic progression with different radii. At least one nanowire 200 is respectively arranged on two sides of the circle center of the plasmon super-surface structure, and the end part of the nanowire 200 faces the circle center of the plasmon super-surface structure.
In some of these embodiments, nanowires 200 each form an angle of 60 ° to 70 ° with respect to the normal axis of the concentric arcs of the plasmonic super-surface structure.
In some of these embodiments, the film layer 100 is a silver film.
In some of these embodiments, the film 100 has a thickness of 200-300 nm.
In some of these embodiments, the nanoslit 101 has a depth (i.e., thickness of the film 100) of 200-300 nm, a width of 150-200 nm, a period of 450-600 nm, an initial radius of 1575-1800 nm, and a depth of 200-300 nm.
In some of these embodiments, the nanowire 200 has a width of 200-1200 nm and the nanowire 200 has a length of 2-30 μm.
The zero-mode crosstalk on-chip detector 10 of the present embodiment has the chemical formula CsPbBr 3 The nanowire 200 is used as a gain medium, has the characteristics of low loss and high optical gain, and can convert an orbital angular momentum field into a plasmon field with sub-wavelength limitation and space limitation by being matched with the plasmon super-surface after optimization design, and the limited plasmon field is further coupled to the end face of a single nanowire 200, so that a single laser mode in the nanowire 200 with high optical gain can be selectively excited. The structure of the plasmon field and the semiconductor nanowire 200 solves the problem of huge loss caused by inter-band transition in metal, and improves the detection efficiency on the orbital angular momentum sheet. In the zero-mode crosstalk orbital angular momentum on-chip detector 10, the plasmon field is super diffraction limit and spatially limited, and the matching of the optimized nanowire 200 realizesOnly single mode lasers excited in a particular orbital angular momentum mode emit, while adjacent modes only exhibit spontaneous emission. The dependence of the single-mode laser on the spectral intensity of the spontaneous emission in the adjacent mode can be calculated to be close to 1 by using the formula (I), wherein the formula (I) represents the intensity of the spectral signal, and the formula (I) represents the number of the orbital angular momentum modes.
An embodiment of the present application also provides a method for manufacturing the zero-mode crosstalk on-orbital angular momentum on-chip detector 10.
A method of fabricating a zero mode crosstalk orbital angular momentum on-chip detector 10 comprising the steps of:
preparing a film layer 100; the preparation method of the film 100 comprises the following steps: evaporating silver particles onto a transparent substrate component by a thermal evaporation coating system under a vacuum condition to form a film 100 by condensation;
preparing a plasmon super-surface structure on the film 100, wherein the plasmon super-surface is obtained by etching a plurality of arc-shaped nano slits 101 on the film 100 by adopting a focused ion beam;
the nanowire 200 is transferred to the preset position of the plasmon super surface through an optical fiber probe.
In some of these embodiments, the method of making the film 100 includes the steps of:
evaporating silver particles to a surface condensation film-forming layer 100 of a transparent base member such as a quartz substrate by a thermal evaporation film-forming system under vacuum conditions, the basic vacuum degree of a film-forming chamber of the thermal evaporation film-forming system being 2×10 -4 ～3×10 -4 Pa; the evaporation rate of the silver particles is kept between 0.2 and 1nm/s.
In some of these embodiments, the surface roughness of the quartz substrate is 0.1-0.5 nm; and/or the purity of the silver particles is more than or equal to 99.999 percent.
In some of these embodiments, the preparation method of the plasmonic super-surface structure includes the following steps:
carrying out focused plasma etching on the film layer 100 to obtain a plurality of nano slits 101, wherein the etching voltage is 10 kV-30 kV, preferably 30kV; the etching current is 2pA to 5nA, preferably (7.7 pA); the etching depth is 200-30 nm, the etching width is 150-200 nm, the period is 450-600 nm, and the initial radius is 1575-1800 nm.
In some of these embodiments, nanowires 200 (of the formula CsPbBr 3 ) The preparation method of the (C) comprises the following steps: the method is carried out by adopting a chemical vapor deposition method.
In some of these embodiments, the method of preparing the nanowire 200 includes the steps of:
CsBr powder and PbBr 2 Mixing the powder according to the mass ratio of 1:1, putting the powder into a first porcelain boat, and carrying out SiO (silicon dioxide) treatment on the powder 2 Placing a Si substrate in a second porcelain boat, placing a first porcelain boat in the center of a quartz tube, inserting the quartz tube into a tube furnace, placing the second porcelain boat at the edge of a heating wire of the tube furnace for depositing a sample, introducing high-purity argon into the quartz tube as carrier gas, exhausting the high-purity argon in the quartz tube at a flow rate of 1000-1500 sccm for 3-5 min, and then reducing the flow rate to 30-60 sccm to grow the sample; heating the center of the tube furnace from room temperature to 560-630 ℃ within 20-30 min, keeping the temperature for 60-120 min, and keeping the air pressure in the quartz tube at 250-300 Torr; naturally cooling the tube furnace to room temperature to obtain the nanowire 200 with the width of 200-1800 nm and the length of 2-30 mu m.
In some of these embodiments, csBr powder and PbBr 2 The powders were all selected from Alfa Aesar.
In some of these embodiments, the method of fabricating the nanowire 200 further includes at least one of the following technical features:
(1) The purity of CsBr powder is more than or equal to 99.999%;
(2)PbBr 2 the purity of the powder is more than or equal to 99.999 percent;
(3) The purity of the high-purity argon is more than or equal to 99.999 percent.
In some of these embodiments, the method of fabricating the nanowire 200 further includes at least one of the following technical features:
(1) When the sample is grown, the flow rate is reduced to 40sccm;
(2) The center of the tube furnace was heated from room temperature to 580 ℃ in 20 min;
(3) The holding time is 80min;
(4) The gas pressure in the quartz tube was maintained at 260Torr.
An embodiment of the application also provides a detection device.
A detection device is used for on-orbit angular momentum sheet detection, and comprises a pumping light source, a spatial light modulator and an on-orbit angular momentum sheet detector 10 of zero-mode crosstalk, wherein the pumping light source is used for providing a light source, and the spatial light modulator is used for modulating a Gaussian beam of the pumping light source into an arbitrary orbital angular momentum beam.
In some of these embodiments, referring to fig. 3, the detection device further includes one or more of a half-wave plate, a linear polarizer, a convex lens, a mirror, a polarization splitting prism, a quarter-wave plate, a first objective lens (shown as objective lens 1 in fig. 3), a second objective lens (shown as objective lens 2 in fig. 3), a half-mirror, an image acquisition component, and a spectrometer. The space light modulator is arranged opposite to the polarization beam splitting prism and used for modulating Gaussian beams of the pumping light source into arbitrary orbital angular momentum beams. The optical path reflection direction is provided with a polarization beam splitter prism, a quarter wave plate, a first objective lens, a second objective lens and a half-reflecting half-lens, and the transmission direction and the reflection direction of the half-reflecting half-lens are respectively provided with an image acquisition component and a spectrometer. The on-orbital angular momentum detector 10 with zero mode crosstalk is disposed between the first objective lens and the second objective lens, the transparent substrate component of the on-orbital angular momentum detector 10 with zero mode crosstalk faces the first objective lens, and the film layer 100 faces the second objective lens.
In some of these embodiments, the image acquisition component may be a CCD industrial camera, or a microscope, such as a WITec alpha-300 confocal microscope.
In some of these embodiments, the first objective may be a 10 x 0.45 objective with a numerical aperture of 0.45. The second objective may be a 100 x 0.95 objective with a numerical aperture of 0.95.
In some of these embodiments, the wavelength of the pump light source is 470-500 nm.
In some of these embodiments, the orbital angular momentum beam modulated by the spatial light modulator is converted to a surface plasmon field through a plasmonic super surface and can excite the nanowire transverse laser mode in a specific orbital angular momentum mode.
In the above-mentioned detection device, the pump light of the pump light source is converted into the orbital angular momentum beam by the spatial light modulator, as shown in fig. 1, the orbital angular momentum field of the plasmon super-front is converted into the plasmon field by focusing on the back of the plasmon super-surface through a 10-time objective lens, so as to selectively excite the nanowire 200, and after collecting the signal by the 100-time objective lens, the photoluminescence signal of the nanowire 200 can be monitored in real time by an image acquisition component such as a microscope, for example, a WITec alpha-300 confocal microscope.
An embodiment of the application also provides a photonic chip.
A photonic chip includes an orbital angular momentum on-chip detector 10 of zero mode cross talk.
Example 1
The present embodiment provides an orbital angular momentum on-chip detector 10 with zero mode crosstalk, which comprises a transparent substrate component, a film layer 100 and nanowires 200, wherein the thickness of the film layer 100 is 200nm. The first surface of the transparent substrate component is provided with a film layer 100, a plurality of arc-shaped nano slits 101 penetrate through the film layer 100, and the plurality of arc-shaped nano slits 101 form a plasmon super-surface structure; the nanoslit 101 has a depth of 200nm, a width of 150nm, a period of 450nm and an initial radius of 1575nm.
The number of nanowires 200 is five, and the five nanowires 200 are disposed on the plasmonic super surface at intervals. The width of the nanowire 200 is 200-1200 nm, and the length of the nanowire 200 is 2-30 μm. The nano slits 101 are in a semicircular arc shape, a plurality of nano slits 101 of the plasmon super-surface structure form a concentric arc, two sides of the circle center of the plasmon super-surface structure are respectively provided with a nanowire 200, and the end parts of the nanowires 200 face the circle center of the plasmon super-surface structure. The nanowires 200 each form an angle of 60 ° with the normal axis of the concentric arcs of the plasmonic super-surface structure.
The above-described zero-mode crosstalk on-orbit angular momentum on-chip detector 10 is prepared by the following preparation method. A method of fabricating a zero mode crosstalk on-orbit angular momentum on-chip detector 10, as shown in fig. 2, comprising the steps of:
And 3, preparing the nanowire 200 by adopting a chemical vapor deposition method. The method of preparing the nanowire 200 includes the steps of:
CsBr powder and PbBr with a purity of 99.999% or more, purchased from Alfa Aesar company 2 Mixing the powder according to the mass ratio of 1:1, putting the powder into a first porcelain boat, and carrying out SiO (silicon dioxide) treatment on the powder 2 Placing a Si substrate in a second porcelain boat, placing a first porcelain boat in the center of a quartz tube, inserting the quartz tube into a tube furnace, placing the second porcelain boat at the edge of a heating wire of the tube furnace for depositing a sample, introducing high-purity argon into the quartz tube as carrier gas, controlling the high-purity argon with the purity of more than or equal to 99.999% to exhaust in the quartz tube at a flow rate of 1000-1500 sccm for 3-5 min, and then reducing the flow rate to 40sccm to grow the sample; heating the center of the tube furnace from room temperature to 580 ℃ within 20min, maintaining the temperature for 80min, and maintaining the pressure in the quartz tube at 260Torr; naturally cooling the tube furnace to room temperature to obtain CsPbBr 3 Width of the containerA nanowire 200 having a length of 2 to 30 μm and a length of 200 to 1800nm.
And 4, transferring the two nanowires 200 with the width of 500nm to a preset position of the plasmon super surface through an optical fiber probe. One end of the nanowire 200 is positioned at two sides of the center of a concentric arc of the plasmon super-surface structure, and forms an included angle of 60 degrees with a normal axis of the concentric arc of the plasmon super-surface structure, and the specific placement position refers to the electric field distribution condition in fig. 4,
in example 1, referring to the SEM photograph of the detector 10 on the orbital angular momentum sheet with zero mode crosstalk in fig. 5 (a), it can be seen from fig. 5 (a) that the surface of the nanowire 200 after the transfer is smoother, and the imaging is observed by using the CCD in the detection device shown in fig. 3, it can be seen that the fluorescence intensity of the second nanowire 200 (labeled nanowire 2 in fig. 5 (b)) is much stronger than that of the first nanowire 200 (labeled nanowire 1 in fig. 5 (b)) at l= -4, and that the fluorescence intensity of the first nanowire 200 is much stronger than that of the second nanowire 200 at l= -4. By observing the spectra of the first nanowire 200 and the second nanowire 200 when excited by the light beam with different orbital angular momentum at 1.3 times the threshold power, see fig. 6, and the abscissa in fig. 6 is the wavelength, it can be seen from fig. 6 that only when l= +3,l = -4, the first nanowire 200 and the second nanowire 200 respectively generate laser signals, and the intensity is far greater than the spectral intensity when excited by other orbital angular momentum modes.
For the simulated simulation test of the plasmon subsurface structure optimization in this embodiment, see fig. 7, the abscissa in fig. 7 is the wavelength; fig. 7 shows a reflectance spectrum when a plasmon super surface structure is present (solid line below) and a reflectance spectrum when no plasmon super surface is present (broken line above) in variable wavelength excitation, and the reflectance spectrum is the lowest at 470nm, which proves that the plasmon super surface structure prepared in this embodiment resonates at the 470nm wavelength and has the strongest plasmon field conversion efficiency.
Example 2
The present embodiment provides an on-orbital angular momentum on-chip detector 10 with zero mode crosstalk, and the on-orbital angular momentum on-chip detector 10 with zero mode crosstalk of the present embodiment is substantially the same as that of embodiment 1, and differs from embodiment 1 in that: the widths of the nanowires 200 are different.
The present embodiment performs a test of the effect of the width of different nanowires 200 on the lasing threshold. Since the plasmon field excites the laser mode in the lateral direction of the titanium ore nanowire 200, the lateral width of the titanium ore nanowire 200 affects the coupling efficiency, resulting in different laser thresholds, which also affect the energy efficiency of the detection device in detection, as shown in fig. 10, the abscissa is the width of the titanium ore nanowire 200 in fig. 10, and the laser threshold is lower as the width of the titanium ore nanowire 200 is smaller in the test range.
Comparative example 1
The present comparative example provides an on-orbital angular momentum on-chip detector 10 of zero mode crosstalk, and the on-orbital angular momentum on-chip detector 10 of zero mode crosstalk of the present comparative example is substantially the same as in example 1, except that: the plasmon super surface period is different.
Fig. 8 is a graph showing the comparison of the electric field intensity of the plasmon generated by the plasmon super surface structure in different periods (pitch in fig. 8), wherein the electric field intensity is the greatest in the period close to the plasmon wavelength, and the electric field intensity is the strongest in the period of 450nm set in example 1, as can be seen from fig. 8.
Comparative example 2
The present embodiment provides an on-orbital angular momentum on-chip detector 10 with zero mode crosstalk, and the on-orbital angular momentum on-chip detector 10 with zero mode crosstalk of the present embodiment is substantially the same as that of embodiment 1, and differs from embodiment 1 in that: the nano-slits 101 of the plasmonic super-surface structure are etched to different depths.
Referring to fig. 3, since embodiment 1 employs back excitation from a plasmonic super surface structure, when the etching depth of the nano-slit 101 of the plasmonic super surface structure is smaller than the thickness of the film layer 100, the plasmonic field is difficult to form on the surface of the film layer 100. That is, in embodiment 1, the etching depth is such that the entire film layer 100 is penetrated, so that the formation of the plasmon field can be achieved.
Comparative example 3
The present embodiment provides an on-orbital angular momentum on-chip detector 10 with zero mode crosstalk, and the on-orbital angular momentum on-chip detector 10 with zero mode crosstalk of the present embodiment is substantially the same as that of embodiment 1, and differs from embodiment 1 in that: the distance of the titanium ore nanowire 200 from the plasmonic field is different.
Referring to fig. 9, the plasmonic field is strongest at the center of the concentric arc of the plasmonic super-surface structure, and it is difficult to couple energy into the titanium ore nanowire 200 when the titanium ore nanowire 200 is far from the center of the concentric arc of the plasmonic super-surface structure.
In summary, the above-mentioned zero-mode crosstalk on-orbital angular momentum on-chip detector 10 selectively excites a single transverse laser mode in the nanowire 200 through sub-wavelength focusing of the orbital angular momentum plasma field, so as to realize on-orbital angular momentum on-chip detection of zero-mode crosstalk, effectively solve the difficult problems of on-chip decoding and detection of the OAM multiplexing signal, and promote the application value of photon orbital angular momentum in the field of photonic chips.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. The detector on the orbital angular momentum sheet with zero mode crosstalk is characterized by comprising a transparent substrate component and nanowires, wherein a first surface of the transparent substrate component is provided with a film layer, a plurality of arc-shaped nano slits penetrate through the film layer, the plurality of arc-shaped nano slits form a plasmon super-surface structure, and the plurality of arc-shaped nano slits are arranged at intervals; the number of the nanowires is multiple, the multiple nanowires are arranged on the film layer in a spaced mode, and the nanowires are perovskite nanowires.
2. The zero-mode crosstalk on-orbital angular momentum on-chip detector according to claim 1, wherein the nano slits are in a semicircular arc shape, a plurality of nano slits of the plasmon super-surface structure form concentric arcs, at least one nanowire is respectively arranged on two sides of the circle center of the plasmon super-surface structure, and the end parts of the nanowires face the circle center of the plasmon super-surface structure.
3. The zero-mode crosstalk on-orbit angular momentum on-chip detector according to claim 2, wherein the nanowires each form an angle of 60 ° to 70 ° with a normal axis of concentric arcs of the plasmonic super-surface structure.
4. A zero mode crosstalk orbital angular momentum on-chip detector according to any of claims 1-3, wherein the nanoslit has a width of 150-200 nm, a period of 450-600 nm, an initial radius of 1575-1800 nm, and a depth of 200-300 nm.
5. A method of making a zero mode crosstalk on-orbit angular momentum on-chip detector according to any of claims 1-5, comprising the steps of:
preparing a film layer; the preparation method of the film layer comprises the following steps: evaporating silver particles onto a transparent substrate component through a thermal evaporation coating system under a vacuum condition to form a film by condensation;
preparing a plasmon super-surface structure on the film layer, wherein the plasmon super-surface is obtained by etching a plurality of arc-shaped nano slits on the film layer by adopting a focused ion beam;
and transferring the nanowire to the preset position of the plasmon super surface through an optical fiber probe.
6. The method for manufacturing the zero-mode crosstalk on-orbit angular momentum on-chip detector according to claim 5, wherein the method for manufacturing the nanowire comprises the following steps:
CsBr powder and PbBr 2 Mixing the powder according to the mass ratio of 1:1, putting the powder into a first porcelain boat, and carrying out SiO (silicon dioxide) treatment on the powder 2 Placing a Si substrate in a second porcelain boat, placing the first porcelain boat in the center of a quartz tube, inserting the quartz tube into a tube furnace, placing the second porcelain boat at the edge of a heating wire of the tube furnace for depositing a sample, introducing high-purity argon into the quartz tube as carrier gas, exhausting the high-purity argon in the quartz tube at a flow rate of 1000-1500 sccm for 3-5 min, and then reducing the flow rate to 30-60 sccm to grow the sample; heating the center of the tube furnace from room temperature to 560-630 ℃ within 20-30 min, keeping the temperature for 60-120 min, and keeping the air pressure in the quartz tube at 250-300 Torr; naturally cooling the tube furnace to room temperature to obtain the nanowire with the width of 200-1800 nm and the length of 2-30 mu m.
7. The method of manufacturing a zero-mode crosstalk on-orbital angular momentum on-chip detector according to claim 6, wherein the method of manufacturing nanowires further comprises at least one of the following technical features:
(1) When the sample is grown, the flow rate is reduced to 40sccm;
(2) The center of the tube furnace was heated from room temperature to 580 ℃ in 20 min;
(3) The holding time is 80min;
(4) The gas pressure in the quartz tube was maintained at 260Torr.
8. A detection device for on-orbital angular momentum sheet detection, comprising a pump light source, a spatial light modulator and the zero-mode crosstalk on-orbital angular momentum sheet detector prepared by the preparation method according to any one of claims 1-4 or 5-7, wherein the pump light source is used for providing a light source, and the spatial light modulator is used for modulating a gaussian beam of the pump light source into an arbitrary orbital angular momentum beam.
9. The probe apparatus of claim 8, wherein the orbital angular momentum beam modulated by the spatial light modulator is converted to a surface plasmon field through a plasmon super surface, and the nanowire transverse laser mode can be excited in a specific orbital angular momentum mode.
10. A photonic chip comprising the zero-mode crosstalk on-orbit angular momentum on-chip detector according to any one of claims 1-4 or prepared by the preparation method according to any one of claims 5-7.
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| CN116895704B (en) * | 2023-09-11 | 2023-11-24 | 长春理工大学 | Detector capable of detecting and identifying chiral light field and preparation method thereof |
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