CN100461558C - Tube core structure of 1-D photon crystal modulated quanta cascade laser and making method - Google Patents
Tube core structure of 1-D photon crystal modulated quanta cascade laser and making method Download PDFInfo
- Publication number
- CN100461558C CN100461558C CNB2006100121270A CN200610012127A CN100461558C CN 100461558 C CN100461558 C CN 100461558C CN B2006100121270 A CNB2006100121270 A CN B2006100121270A CN 200610012127 A CN200610012127 A CN 200610012127A CN 100461558 C CN100461558 C CN 100461558C
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- grown
- contact layer
- photon crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The invention is a quanta concatenation laser core structure modulated by 1 dimension photon wafer is characterized in that the structure includes: an underlay, a quanta concatenation laser resonance cavity which is on underlay; a 1 dimension photon wafer structure which composed by alternated repeating for several periods of air medium formed by etching and laser material, the 1 dimension photon wafer structure is on back cavity surface of quanta concatenation laser resonance cavity, the 1 dimension photon wafer structure is produced on underlay; a lower ohm contacting layer which is plated on back of underlay.
Description
Technical field
The invention belongs to technical field of semiconductors, is a kind of with the tube core structure of 1-D photon crystal structure applications in quantum cascade laser, and the unique distinction of this method is to utilize 1-D photon crystal can reduce the chamber area loss of light.The present invention relates to the quantum cascade laser tube core structure and the manufacture method of 1-D photon crystal modulation.
Background technology
Middle-infrared band 3～5 μ m and far infrared band 8～12 μ m are two very important atmospheric windows, and the laser and the detector that work in this wave band have very wide application prospect in fields such as atmosphere environment supervision and infrared counteractions.The quantum cascade laser wavelength is positioned at mid and far infrared, can cover this two atmospheric windows, is the new device that " energy band engineering " design combines with high-precision molecular beam epitaxy material growing technology.
Quantum cascade laser is compared with the ordinary semiconductor laser as a kind of unipolarity light source based on the intersubband electron transition and had the following advantages: at first the energy gap of its excitation wavelength and active area materials is irrelevant, and mainly the quantum well thickness by active area determines; People can choose and study ripely more and reliable more material, by adjusting the width of quantum well, can change excitation wavelength in very big wave-length coverage; Secondly, the light that the transition of one pole charge carrier produces has unidirectional polarization (TM ripple) property, and the associating density of states of these activated states is similar to the δ function, and corresponding gain spectral is very narrow, symmetrical and have less temperature-sensitivity coefficient, therefore is expected to obtain the output of very low threshold current and single longitudinal mode; Also have, its excitation process is the transition of a kind of charge carrier intersubband in conduction band in essence, and the intersubband auger recombination can be ignored, and quantum cascade laser has higher characteristic temperature in theory.Just because of having these characteristics, quantum cascade laser becomes a big focus of research in the world.
Adopting the indium phosphide quantum cascade laser of strain-compensation technique, because the discontinuous energy difference of conduction band that InGaAs/InAlAs forms is bigger, device performance is improved, is research and widely used a kind of material structure system at present.
The present invention is a kind of new structure, 1-D photon crystal is applied to the indium phosphide quantum cascade laser of strain compensation.
Summary of the invention
The objective of the invention is to, a kind of quantum cascade laser tube core structure and manufacture method of 1-D photon crystal modulation are provided, it has utilized 1-D photon crystal to have photon band gap on the direction that its refractive index cycle changes, be in the principle that light can not be propagated along the direction of photonic crystal refractive index cycle variation in the photon band gap, 1-D photon crystal is increased the rear facet reflectivity of resonant cavity as the rear facet of laser resonant cavity, to improve laser performance.
The quantum cascade laser tube core structure of a kind of 1-D photon crystal modulation of the present invention is characterized in that this structure comprises:
One substrate;
One quantum cascade laser resonant cavity, this quantum cascade laser resonant cavity is produced on the substrate;
One 1-D photon crystal structure, air dielectric that this 1-D photon crystal structure is formed by deep erosion and laser material medium alternately repeat a plurality of cycles and form, this 1-D photon crystal structure is positioned at the rear facet of quantum cascade laser resonant cavity, and this 1-D photon crystal structure fabrication is on substrate;
Ohmic contact layer once, this time ohmic contact layer evaporation is at substrate back.
Wherein substrate is an indium phosphide.
Wherein the section structure of tube core structure laser resonant cavity comprises:
One lower caldding layer, this lower caldding layer is grown on the substrate;
One active layer, this active layer is grown on the lower caldding layer;
One upper caldding layer, this upper caldding layer is grown on the active layer;
One ducting layer, this ducting layer is grown on the upper caldding layer;
One contact layer, this contact layer is grown on the ducting layer;
One separator, this separator be deposited on the contact layer and substrate on, and covered the side, both sides of lower caldding layer, active layer, upper caldding layer, ducting layer, contact layer; The central longitudinal of this separator is injected window to having an electric current;
Ohmic contact layer on one, ohmic contact layer evaporation and covers electric current and injects window on separator on this.
Wherein the section structure of tube core structure 1-D photon crystal structure comprises:
One lower caldding layer, this lower caldding layer is grown on the substrate;
One active layer, this active layer is grown on the lower caldding layer;
One upper caldding layer, this upper caldding layer is grown on the active layer;
One ducting layer, this ducting layer is grown on the upper caldding layer;
One contact layer, this contact layer is grown on the ducting layer;
One separator, this separator be deposited on the contact layer and substrate on, and covered the side, both sides of lower caldding layer, active layer, upper caldding layer, ducting layer, contact layer.
The manufacture method of the quantum cascade laser tube core structure of a kind of 1-D photon crystal modulation of the present invention is characterized in that this method comprises the steps:
1) on substrate, adopts the method for molecular beam epitaxy grow successively lower caldding layer, active layer, upper caldding layer, ducting layer, contact layer;
2) adopt exposure and dry etching technology, with the material both sides etching of growing on the substrate, forming section is the ridge structure of inverted T shape; One end of the formed ridge structure of material of growing on substrate simultaneously vertically etches the structure of a plurality of repetition periods of air dielectric and laser material medium, forms 1-D photon crystal structure and quantum cascade laser resonant cavity;
3) material surface and two outgrowth one deck separators of on the upper surface of substrate and substrate, growing;
4) method of employing photoetching and chemical corrosion forms an electric current and injects window in the middle of the separator on the quantum cascade laser resonant cavity;
5) ohmic contact layer in the upper surface growth of tube core structure, ohmic contact layer covers electric current injection window on this;
6) adopt chemical method that the last ohmic contact layer of 1-D photon crystal structure is eroded;
7) with substrate thinning;
8) ohmic contact layer under the growth of the back side of substrate;
9) cleavage is finished the making of tube core.
Wherein substrate is an indium phosphide.
Adopt structure of the present invention, air dielectric 2 and laser material medium 3 alternately repeat 3 cycles just can make the reflectivity of indium phosphide quantum qc laser resonant cavity chamber face 28.0% bring up to 96.1% theoretically, makes device that the power output of littler threshold current and Geng Gao be arranged; Simultaneously, the present invention is a kind of only stone implement spare structure, for its extensive use is laid a good foundation.
Description of drawings
For further specifying content of the present invention and characteristics, below in conjunction with drawings and Examples the present invention is explained in detail, wherein:
Fig. 1 is the schematic three dimensional views of the quantum cascade laser tube core structure of 1-D photon crystal modulation of the present invention;
Fig. 2 is the cross-sectional view of laser resonant cavity 4 among Fig. 1;
Fig. 3 is the cross-sectional view of 1-D photon crystal structure 1 among Fig. 1;
Fig. 4 is a specific embodiment of the present invention.
Embodiment
See also Fig. 1, Fig. 2 and shown in Figure 3, the quantum cascade laser tube core structure of a kind of 1-D photon crystal modulation of the present invention, this structure comprises:
One substrate 6, this substrate 6 is an indium phosphide;
One quantum cascade laser resonant cavity 4 (among Fig. 1), this quantum cascade laser resonant cavity 4 is produced on the substrate 6;
The section structure of this tube core structure quantum cascade laser resonant cavity 4 (among Fig. 2) comprising:
One lower caldding layer 7, this lower caldding layer 7 is grown on the substrate 6;
One active layer 8, this active layer 8 is grown on the lower caldding layer 7;
One upper caldding layer 9, this upper caldding layer 9 is grown on the active layer 8;
One ducting layer 10, this ducting layer 10 is grown on the upper caldding layer 9;
One contact layer 11, this contact layer 11 is grown on the ducting layer 10;
One separator 12, this separator 12 be deposited on the contact layer 11 and substrate 6 on, and covered the side, both sides of lower caldding layer 7, active layer 8, upper caldding layer 9, ducting layer 10, contact layer 11; The central longitudinal of this separator 12 is injected window 13 to having an electric current;
One 1-D photon crystal structure 1 (among Fig. 1), the air dielectric 2 that this 1-D photon crystal structure 1 is formed by deep erosion alternately repeats a plurality of cycles with laser material medium 3 and forms, this 1-D photon crystal structure 1 is positioned at the rear facet of quantum cascade laser resonant cavity 4, and this 1-D photon crystal structure 1 is produced on the substrate 6;
The section structure of this tube core structure 1-D photon crystal structure 1 (among Fig. 3) comprising:
One lower caldding layer 7, this lower caldding layer 7 is grown on the substrate 6;
One active layer 8, this active layer 8 is grown on the lower caldding layer 7;
One upper caldding layer 9, this upper caldding layer 9 is grown on the active layer 8;
One ducting layer 10, this ducting layer 10 is grown on the upper caldding layer 9;
One contact layer 11, this contact layer 11 is grown on the ducting layer 10;
One separator 12, this separator 12 be deposited on the contact layer 11 and substrate 6 on, and covered the side, both sides of lower caldding layer 7, active layer 8, upper caldding layer 9, ducting layer 10, contact layer 11;
Once ohmic contact layer 15, and this time ohmic contact layer 15 evaporations are at substrate 6 back sides.
Please consult Fig. 1, Fig. 2 and shown in Figure 3 again, the manufacture method of the quantum cascade laser tube core structure of a kind of 1-D photon crystal modulation of the present invention, this method comprises the steps:
1) on substrate 6, adopts the method for molecular beam epitaxy grow successively lower caldding layer 7, active layer 8, upper caldding layer 9, ducting layer 10, contact layer 11; This substrate 6 is an indium phosphide;
2) adopt exposure and dry etching technology, with the material both sides etching of growth on the substrate 6, forming section is the ridge structure of inverted T shape; An end of the formed ridge structure of material of growing on substrate 6 vertically etches the structure of a plurality of repetition periods of air dielectric 2 and laser material medium 3 simultaneously, forms 1-D photon crystal structure 1 and quantum cascade laser resonant cavity 4;
3) material surface and two outgrowth one deck separators 12 of growth on the upper surface of substrate 6 and substrate 6;
4) method of employing photoetching and chemical corrosion forms electric currents in the middle of the separator 12 on quantum cascade laser resonant cavity 4 and injects windows 13;
5) ohmic contact layer 14 in the upper surface growth of tube core structure, ohmic contact layer 14 covers electric current injection window 13 on this;
6) adopt chemical method that the last ohmic contact layer 14 of 1-D photon crystal structure 1 is eroded;
7) with substrate 6 attenuates;
8) ohmic contact layer 15 under the growth of the back side of substrate 6;
9) cleavage is finished the making of tube core.
Embodiment
The present invention is a kind of with the tube core structure of 1-D photon crystal structure applications in quantum cascade laser, and as Fig. 1, this structure comprises: substrate 6, quantum cascade laser resonant cavity 4 and 1 three parts of 1-D photon crystal structure.
In order to improve the chamber face reflectivity of semiconductor laser, reduce the chamber area loss, generally take the method for chamber face plating reflectance coating or multilayer optical deielectric-coating.We have adopted a kind of new design, when making quantum cascade laser resonant cavity 4, made 1-D photon crystal structure 1 (among Fig. 1) synchronously at the rear facet of quantum cascade laser resonant cavity 4, the air dielectric 2 that this 1-D photon crystal structure 1 is formed by deep erosion alternately repeats a plurality of cycles with laser material medium 3 and forms.Air dielectric 2 and laser material medium 3 alternately repeat 3 cycles just can make the reflectivity of indium phosphide quantum qc laser resonant cavity rear facet 28.0% bring up to 96.1% theoretically, makes device that the power output of littler threshold current and Geng Gao be arranged.Simultaneously, 1-D photon crystal structure 1 completes synchronously with quantum cascade laser resonant cavity 4 (among Fig. 1), is a kind of only stone implement spare structure, for its extensive use is laid a good foundation.
Concrete implementation step:
(1) molecular beam epitaxial growth of quantum cascade laser material.We adopted the n type to mix or semi-insulated indium phosphide as the substrate of quantum cascade laser; And adopt molecular beam epitaxy technique on substrate 6 successively epitaxial growth lower caldding layer 7, active layer 8, upper caldding layer 9, ducting layer 10, contact layer 11.Wherein lower caldding layer 7 is the InGaAs layer of the low n type doping of 300 nanometers, and selects the InGaAs of suitable ingredients, makes its lattice constant and substrate 6 couplings, for next step growth active layer has been built a good platform.
Active layer 8 comprises repetitive identical in a plurality of nominals; Each repetitive is made up of active area and injection region, and active area can be finished charge carrier in the transition of son energy interband up and down on function, produces photo emissions; The injection region reuses the charge carrier relaxation to next repetitive.Just be based on the intersubband electron transition, quantum cascade laser is just compared with the ordinary semiconductor laser and had the following advantages: at first the energy gap of its excitation wavelength and active area materials is irrelevant, and mainly the quantum well thickness by active area determines; Secondly, the light that the transition of one pole charge carrier produces has unidirectional polarization (TM ripple) property, and the associating density of states of these activated states is similar to the δ function, and corresponding gain spectral is very narrow, symmetrical and have less temperature-sensitivity coefficient, therefore is expected to obtain the output of very low threshold current and single longitudinal mode; Also have, its excitation process is the transition of a kind of charge carrier intersubband in conduction band in essence, and the intersubband auger recombination can be ignored, and quantum cascade laser has higher characteristic temperature in theory; Our AlGaAs and InGaAs material of adopting strain to compensate each other of repetitive in the active layer 8.Adopt strain-compensation technique, the discontinuous energy difference of the conduction band that InGaAs/InAlAs is formed increases, thereby the probability that electron tunneling enters continuous band diminishes, and the device feature temperature is improved, and performance improves.
(2) after having finished the molecular beam epitaxial growth of quantum cascade laser material above-mentioned, adopt exposure and dry etching technology, with the material both sides etching of growth on the substrate 6, forming section is the ridge structure of inverted T shape; An end of the formed ridge structure of material of growth vertically etches the structure of a plurality of repetition periods of air dielectric 2 and laser material medium 3 on substrate 6, forms 1-D photon crystal structure 1 and quantum cascade laser resonant cavity 4.
Fig. 1 has shown exemplary three-dimensional structure diagram of the present invention, is made up of 1-D photon crystal structure 1 and quantum cascade laser resonant cavity 4; Wherein: 1-D photon crystal structure 1 is positioned at quantum cascade laser resonant cavity 4 rear facets, and the air dielectric 2 and the laser material medium 3 that are formed by deep erosion alternately repeat a plurality of cycles and form; Regulate the thickness of air dielectric 2 and laser material medium 3, make the light frequency of active layer emission be arranged in the 1-D photon crystal photon band gap just, the reflectivity of resonant cavity rear facet is increased greatly, and air dielectric 2 alternately repeats 3 cycle reflectivity with laser material medium 3 and just arrives 96.1% in theory.
Ridge level among Fig. 1 is that the depth H of etching structurally should surpass active layer 8 and lower caldding layer 7, and purpose has two: first has improved the horizontal electricity and the some optical confinement of device, with the electric power consumption that reduces device, the threshold current that reduces device work; The second, the effect that increases reflectivity is played in the light emission that the 1-D photon crystal 1 that the air dielectric 2 that etching forms and laser material medium 3 are formed can modulating resonance chamber active layer.The wide W of ridge adopts 20～30 microns.Though too small ridge is wide to be helped reducing power dissipation but strengthen the roughness scattering effect of ridged both sides relatively, simultaneously excessively then can strengthen power dissipation.Either way can increase the device threshold current density, the deterioration of device performance.
(3) the deposit separator 12.This separator 12 be deposited on the contact layer 11 and substrate 6 on, and covered the side, both sides of lower caldding layer 7, active layer 8, upper caldding layer 9, ducting layer 10, contact layer 11.
Separator shown in Fig. 2 12 adopts CVD method deposit Si02 or Si3N4 forming on the ridge structure, and separator 12 thickness requirements are greater than 350 nanometers, and the fine and close entire device material upper surface that evenly covers will guarantee that especially the ridged both sides are covered fully.
(4) method of employing photoetching and chemical corrosion forms electric currents in the middle of the separator 12 on quantum cascade laser resonant cavity 4 and injects windows 13.
(5) ohmic contact layer 14 in the upper surface growth of tube core structure, ohmic contact layer 14 covers electric current injection window 13 on this.Go up the method deposit Ti/Au material that ohmic contact layer 14 adopts evaporation shown in Fig. 2.
(6) adopt chemical method that the last ohmic contact layer 14 of 1-D photon crystal structure 1 is eroded.Adopt photoresist protective number qc laser resonant cavity 4 during this time.Like this, in guaranteed discharge qc laser resonant cavity 4 integralities, make 1-D photon crystal structure 1 not have the injection of electric current, reduce the thermal effect of the quantum cascade laser tube core of 1-D photon crystal modulation.Because the existence of separator 12, when making the last ohmic contact layer 14 of chemical method corrosion 1-D photon crystal structure 1, can not erode to the laser material medium 3 of 1-D photon crystal structure 1.
(7) with substrate 6 attenuates.Substrate thinning helps device and dispels the heat at work, and the thickness behind substrate 6 attenuates is at 120～150 microns.
(8) ohmic contact layer 15 under the growth of the back side of substrate 6.Adopt the method deposit Ti/Au material of evaporation.
(9) cleavage is finished the making of tube core.Chamber length is at 1～3 millimeter.
Fig. 4 is for using a specific embodiment of the present invention, wherein:
Earlier copper heat sink 17 is adopted plating mode plating indium earlier, quantum cascade laser tube core 16 with 1-D photon crystal modulation of the present invention adopts the upside-down mounting mode to be welded on the copper heat sink 17 with indium again, and the ventricumbent working method of this extension helps the heat radiation of device active layer; In vacuum furnace, carry out sintering then.
For the upside-down mounting mode, the thickness of indium and the temperature of sintering are extremely important.Too thick indium and too high sintering temperature can make indium get over active layer 8 along the side of quantum cascade laser tube core 16, directly cause the short circuit of active layer 8 and can not swash and penetrate; The very thin meeting of indium layer makes quantum cascade laser tube core 16 rosin joints, makes the heat conductivility variation, influences the performance of quantum cascade laser.The parameter that we adopt: 3～5 microns of indium thickness; 190 degrees centigrade of sintering temperatures.
The quantum cascade laser tube core 16 of 1-D photon crystal modulation utilizes the ultrasonic spot welding technology that spun gold 20 is guided on the potsherd, and the potsherd top and bottom are all gold-plated, and the external electrode line adopts copper cash 21 to draw from potsherd.The power supply tie-in line of device is copper cash 21 just very, and negative pole is a copper heat sink 17.So just finished the quantum cascade laser device of 1-D photon crystal modulation.
Claims (1)
1. the manufacture method of the quantum cascade laser tube core structure of a 1-D photon crystal modulation is characterized in that this method comprises the steps:
1) on the indium phosphide substrate, adopts the method for molecular beam epitaxy grow successively lower caldding layer, active layer, upper caldding layer, ducting layer, contact layer;
2) adopt exposure and dry etching technology, with the material both sides etching of growing on the substrate, forming section is the ridge structure of inverted T shape; One end of the formed ridge structure of material of growing on substrate simultaneously vertically etches the structure of a plurality of repetition periods of air dielectric and laser material medium, forms 1-D photon crystal structure and quantum cascade laser resonant cavity;
3) material surface and two outgrowth one deck separators of on the upper surface of substrate and substrate, growing;
4) method of employing photoetching and chemical corrosion forms an electric current and injects window in the middle of the separator on the quantum cascade laser resonant cavity;
5) ohmic contact layer in the upper surface growth of tube core structure, ohmic contact layer covers electric current injection window on this;
6) adopt chemical method that the last ohmic contact layer of 1-D photon crystal structure is eroded;
7) with substrate thinning;
8) ohmic contact layer under the growth of the back side of substrate;
9) cleavage is finished the making of tube core;
Wherein the section structure of quantum cascade laser resonant cavity comprises: a lower caldding layer, and this lower caldding layer is grown on the substrate; One active layer, this active layer is grown on the lower caldding layer; One upper caldding layer, this upper caldding layer is grown on the active layer; One ducting layer, this ducting layer is grown on the upper caldding layer; One contact layer, this contact layer is grown on the ducting layer; One separator, this separator be deposited on the contact layer and substrate on, and covered the side, both sides of lower caldding layer, active layer, upper caldding layer, ducting layer, contact layer; The central longitudinal of this separator is injected window to having an electric current; Ohmic contact layer on one, ohmic contact layer evaporation and covers electric current and injects window on separator on this;
The section structure of 1-D photon crystal structure comprises: a lower caldding layer, and this lower caldding layer is grown on the substrate; One active layer, this active layer is grown on the lower caldding layer; One upper caldding layer, this upper caldding layer is grown on the active layer; One ducting layer, this ducting layer is grown on the upper caldding layer; One contact layer, this contact layer is grown on the ducting layer; One separator, this separator be deposited on the contact layer and substrate on, and covered the side, both sides of lower caldding layer, active layer, upper caldding layer, ducting layer, contact layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100121270A CN100461558C (en) | 2006-06-07 | 2006-06-07 | Tube core structure of 1-D photon crystal modulated quanta cascade laser and making method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100121270A CN100461558C (en) | 2006-06-07 | 2006-06-07 | Tube core structure of 1-D photon crystal modulated quanta cascade laser and making method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101087057A CN101087057A (en) | 2007-12-12 |
| CN100461558C true CN100461558C (en) | 2009-02-11 |
Family
ID=38937881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100121270A Expired - Fee Related CN100461558C (en) | 2006-06-07 | 2006-06-07 | Tube core structure of 1-D photon crystal modulated quanta cascade laser and making method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100461558C (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673920B (en) * | 2008-09-10 | 2011-04-13 | 中国科学院半导体研究所 | Edge emitting two-dimensional photonic crystal distributed feedback quantum cascade laser and method for preparing same |
| CN102055135B (en) * | 2009-11-04 | 2013-09-04 | 中国科学院半导体研究所 | Tapered photonic crystal quantum cascade laser and manufacture method thereof |
| CN102394471B (en) * | 2011-08-13 | 2012-12-05 | 重庆大学 | All-optical phase modulation system of quantum cascade laser |
| FR3048561B1 (en) * | 2016-03-03 | 2019-03-15 | Centre National De La Recherche Scientifique | QUASTIC CASCADE LASER. |
| JP2019530987A (en) * | 2016-10-17 | 2019-10-24 | サントル ナショナル ドゥ ラ ルシェルシュ シアンティフィック | Laser light source and manufacturing method thereof |
| US11569428B2 (en) * | 2016-12-27 | 2023-01-31 | Santa Clara | Superconducting qubit device packages |
| CN106972344B (en) * | 2017-04-13 | 2020-06-02 | 广东工业大学 | Edge-emitting semiconductor laser device and manufacturing method thereof |
| CN113466994B (en) * | 2021-07-13 | 2022-07-05 | 中北大学 | Novel optical fiber coupler |
| CN116111449A (en) * | 2023-04-11 | 2023-05-12 | 湖南汇思光电科技有限公司 | Optical pumping one-dimensional photonic crystal micro-nano laser and preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308452A (en) * | 2000-04-25 | 2001-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| US20050276298A1 (en) * | 2004-06-10 | 2005-12-15 | Fischer Marc O | Tuneable unipolar lasers |
-
2006
- 2006-06-07 CN CNB2006100121270A patent/CN100461558C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001308452A (en) * | 2000-04-25 | 2001-11-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor laser device |
| US20050276298A1 (en) * | 2004-06-10 | 2005-12-15 | Fischer Marc O | Tuneable unipolar lasers |
Non-Patent Citations (1)
| Title |
|---|
| room temperature operation of strain-compensated 5.5μmquantum cascade lasers. LU，XIUZHEN.半导体学报，第26卷第12期. 2005 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101087057A (en) | 2007-12-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100461558C (en) | Tube core structure of 1-D photon crystal modulated quanta cascade laser and making method | |
| US8929415B2 (en) | Photonic crystal cavities and related devices and methods | |
| CN101527429B (en) | Semiconductor laser and making method thereof | |
| CN103050591A (en) | Surface plasmon electro excitation source and manufacturing method thereof | |
| CN101345393B (en) | Production method of single-face metallic waveguide Terahertz quantum cascaded laser | |
| CN103532014B (en) | A kind of distribution bragg feedback tunable laser and preparation method thereof | |
| CN101867148B (en) | FP (Fabry-Perot) cavity laser with reflecting surfaces of photonic crystals and vertical emergent surface | |
| US8619358B2 (en) | Electrically pumped extrinsic semiconductor optical amplifier with slot waveguide | |
| CN101192739A (en) | Vertical cavity radiation laser including high adulteration tunnel structure | |
| CN100391069C (en) | Device structure and its production for single-modulus quantum cascade laser | |
| CN110112653B (en) | Vertical external cavity surface emitting semiconductor laser | |
| CN101662124A (en) | Single-mode quantum cascaded laser linear array structure | |
| CN104269472A (en) | Surface plasmon electro-excitation source with medium-metal near-field coupling structure and manufacturing method thereof | |
| CN101026287A (en) | GaAs base single-mode emitting quantum cascade laser structure and its manufacturing method | |
| CN101093931B (en) | Long wavelength laser transmitted perpendicular to surface of cavity by using integrated pumping light source | |
| CN115548880A (en) | Vertical cavity surface emitting laser array with multi-tunnel junction flip-chip surface relief structure | |
| CN102299481A (en) | Nitride semiconductor laser chip and method of fabrication thereof | |
| KR20100072048A (en) | Method for producing a radiation-emitting component and radiation-emitting component | |
| CN100367586C (en) | Al-Ga-In-As multi-quantum sink super radiation luminous diode | |
| CN202395303U (en) | Surface plasma excimer laser | |
| CN1960091A (en) | Tube core cell structure of gallium - arsenic based quanta cascaded laser, and fabricating method | |
| CN101841124A (en) | High-power fundamental transverse mode flat plate coupling optical waveguide semiconductor laser structure | |
| Yu et al. | Design and fabrication of room temperature electrically pumped ZnO nanowire hybrid plasmonic lasers | |
| CN113794104B (en) | Photonic crystal laser | |
| CN105048285A (en) | Method for improving the performance of gallium nitride laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 |