CN105896258A - Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser - Google Patents
Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser Download PDFInfo
- Publication number
- CN105896258A CN105896258A CN201610429328.4A CN201610429328A CN105896258A CN 105896258 A CN105896258 A CN 105896258A CN 201610429328 A CN201610429328 A CN 201610429328A CN 105896258 A CN105896258 A CN 105896258A
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- Prior art keywords
- dimensional semiconductor
- optical fiber
- laser
- pulse
- saturable absorbing
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
Abstract
The invention relates to the technical field of lasers, and provides a two-dimensional semiconductor saturable absorber mirror. The two-dimensional semiconductor saturable absorber mirror comprises an optical fiber, a two-dimensional semiconductor film attached to the optical fiber end face and a gold film attached to the two-dimensional semiconductor film. The invention further provides a preparation method of the two-dimensional semiconductor saturable absorber mirror. The preparation method comprises the steps of: cutting the optical fiber; placing the cut optical fiber and a two-dimensional semiconductor target material in a vacuum chamber, depositing two-dimensional semiconductor plasma on the optical fiber end face, forming the two-dimensional semiconductor film, and enabling the two-dimensional semiconductor film to reach the required thickness by controlling the deposition time and/or the deposition temperature; and plating the gold film on the obtained two-dimensional semiconductor film. The novel two-dimensional semiconductor saturable absorber mirror provided by the invention is composed of the optical fiber end face, the two-dimensional semiconductor film and the gold film, and has the advantages of being high in damage threshold, simple in structure, low in cost, and high in reliability.
Description
Technical field
The invention belongs to field of laser device technology, particularly relate to a kind of two-dimensional semiconductor saturable absorbing mirror and
Preparation method and a kind of pulse optical fiber.
Background technology
Utilizing passive mode-locking technology is a kind of effective way that optical fiber laser realizes ultrafast pulse output, and quilt
The key technology of dynamic locked mode is to need possess saturable absorption effect in resonant cavity of fibre-optical laser.This area is ground
Studying carefully personnel, to have utilized multiple saturable absorption effect to obtain passive mode-locking ultrafast pulse in optical fiber laser defeated
Go out.In general, in order to overcome the shortcoming of optical-fiber laser locked mode environment instability, research worker generally uses
Semiconductor saturable absorbing mirror (SESAM) realizes the output of optical fiber laser locked mode ultrafast pulse.But,
Owing to commercial SESAM is expensive, complex manufacturing technology, saturable absorption narrow bandwidth, normally only support
The other pulse of picosecond exports, and damage threshold is relatively low, so it is ultrafast not also to be suitable for comprehensive research
The dynamics of optical fiber laser.Therefore, develop with low cost, technique is simple, high performance satisfy
It is always the target that ultrafast laser physical field is pursued with absorber.
Summary of the invention
For solving above-mentioned technical problem, the invention provides a kind of two-dimensional semiconductor saturable absorbing mirror and system thereof
Preparation Method and a kind of pulse optical fiber, to solve that existing commercial SESAM is expensive, to make
Complex process, reliability are low, the defect of work strip width.
The present invention is achieved in that a kind of two-dimensional semiconductor saturable absorbing mirror, including optical fiber, is attached to institute
The two-dimensional semiconductor thin film stating fiber end face, the golden film being attached on described two-dimensional semiconductor thin film.
Present invention also offers the preparation method of a kind of described two-dimensional semiconductor saturable absorbing mirror, including with
Lower step:
Optical fiber is cut, forms fiber end face；
Optical fiber after cutting and two-dimensional semiconductor target are placed in vacuum chamber, by two-dimensional semiconductor target material surface
Ionization, produces two-dimensional semiconductor plasma, and described two-dimensional semiconductor is plasma-deposited at fiber end face
On, form two-dimensional semiconductor thin film, by controlling sedimentation time and/or depositing temperature, make described two dimension partly lead
Body thin film reaches desired thickness；
Gold-plated film on gained two-dimensional semiconductor thin film.
Present invention also offers a kind of pulse optical fiber, including semiconductor pump laser, optical coupled
Device, resonator cavity；The pump light that described semiconductor pump laser produces is coupled into through described optical coupler
Described resonator cavity, two-dimensional semiconductor saturable absorbing mirror described above in described resonator cavity, described two dimension half
The flashlight entered in described resonator cavity is modulated by conductor saturable absorbing mirror, produces pulse laser.
Beneficial effect: the two-dimensional semiconductor saturable absorbing mirror that the present invention provides partly is led by fiber end face, two dimension
Body thin film and gold film composition, have high damage threshold, be conveniently mounted and dismounted and is difficult to be damaged in use；In the preparation can batch
Preparation, and with low cost, replicability is strong；Simultaneously because being integrated on fiber end face, in use only
Need to be easy to use and to have high reliability high by directly fused for this device in fiber laser system.This
A little features make the pulse optical fiber using this two-dimensional semiconductor saturable absorbing mirror to be prepared from, tool
The advantage having all-fiber, high reliability.Described pulse optical fiber can through pulse amplifying device,
It is suitably applied the seed source as amplifier, and easily prepared one-tenth product, and carry out achievements conversion.
Accompanying drawing explanation
Fig. 1 is the structural representation of the two-dimensional semiconductor saturable absorbing mirror 1 that the embodiment of the present invention provides；
Fig. 2 is that the preparation method flow process of the two-dimensional semiconductor saturable absorbing mirror 1 that the embodiment of the present invention provides is shown
It is intended to；
Fig. 3 is the structural representation of the pulse optical fiber that the embodiment of the present invention provides；
Fig. 4 is the knot that the another kind that the embodiment of the present invention provides has the pulse optical fiber from enlarging function
Structure schematic diagram.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and reality
Execute example, the present invention is further elaborated.
As it is shown in figure 1, the invention provides a kind of two-dimensional semiconductor saturable absorbing mirror 10, including optical fiber 100,
It is attached to the two-dimensional semiconductor thin film 101 of fiber end face and is attached to the highly reflecting films on two-dimensional semiconductor thin film 101
102.Wherein, optical fiber can use single-mode fiber, polarization maintaining optical fibre, high-gain Active Optical Fiber (as Er-doped fiber,
Yb dosed optical fiber, thulium doped fiber, mix holmium optical fiber, mix praseodymium optical fiber, mix bismuth optical fiber) or active ZBLAN optical fiber.
The material of two-dimensional semiconductor thin film 101 can use copper sulfide, black phosphorus, gallium selenide, telluride gallium, sulfuration
Gallium, Germanium selenide, two telluride tungsten, two telluride molybdenums, curing hafnium, two selenizing hafniums, two cobaltous selenides, two telluride
Cobalt, two selenizing rheniums, two telluride rheniums, stannic disulfide, two Tin diselenide .s, curing niobium, two selenizing niobiums, two sulfur
Change titanium, two selenizing titaniums, tantalum disulfide, two selenizing tantalums, curing zirconium, two telluride zirconiums, bismuth sulfide, selenizing
Any one in bismuth, Tellurobismuthite., or the hetero-junctions superlattices that any bi-material of alternating growth is constituted.
Highly reflecting films 102 use the golden film with high reflectance, the thickness of described gold film to be not less than 500nm,
Preferably 500-1000nm.Highly reflecting films 102 are equivalent to a high reflection mirror, can prevent two-dimensional semiconductor simultaneously
Thin film is by the dioxygen oxidation in air and water vapor encroachment, thus plays a protective role.
The operation principle of this two-dimensional semiconductor saturable absorbing mirror 10 is, one as laser instrument carries
High reflection mirror for modulation.When the laser in resonator cavity is reflected by this two-dimensional semiconductor saturable absorbing mirror 1,
Laser can be modulated by two-dimensional semiconductor saturable absorbing mirror 10, it is achieved adjusts Q or locked mode.This two dimension is partly led
Body saturable absorbing mirror 10 has high damage threshold, can be as the reflection of light while light carries out wide-band modulation
Mirror, can be used for the Primary Component that in laser system, pulse laser produces.
As in figure 2 it is shown, the embodiment of the present invention additionally provides the preparation of a kind of two-dimensional semiconductor saturable absorbing mirror
Method, comprises the steps:
S1: optical fiber is carried out perpendicular cuts, obtains smooth clean fiber end face；
S2: the optical fiber after cutting and two-dimensional semiconductor target are placed in vacuum chamber, by two-dimensional semiconductor target
Surface ionization, to produce two-dimensional semiconductor plasma, described two-dimensional semiconductor is plasma-deposited at light
On fine end face, form two-dimensional semiconductor thin film；Control sedimentation time and/or depositing temperature, make described two dimension half
Conductor thin film reaches desired thickness.
S3: gold-plated film on gained two-dimensional semiconductor thin film.
Specifically, step S1 can be cut by optical fiber cutter, during cutting, care is taken to ensure that optical fiber end
Face is smooth.
Specifically, step S2 plates on described optical fiber the process of two-dimensional semiconductor thin film particularly as follows: will cut
Optical fiber after cutting exchanges in target position with what two-dimensional semiconductor target was placed in vacuum chamber.Optical fiber and two dimension are partly led
It should be noted that keep fiber end face to be directed at two-dimensional semiconductor target, after guaranteeing when body target is placed in vacuum chamber
In continuous step, the two-dimensional semiconductor plasma of ionization can be deposited on fiber end face well.By two dimension half
Conductor target material surface ionization is to produce two-dimensional semiconductor plasma, and is sunk by two-dimensional semiconductor plasma
Amass on fiber end face, formed two-dimensional semiconductor thin film.
Specifically, in step S3 on gained two-dimensional semiconductor thin film during gold-plated film, gold target material is positioned over very
In the direct current target position of empty room.
When being embodied as, magnetron sputtering method or pulse radiation frequency sedimentation can be used in step s 2 two dimension partly to be led
Form plasma after the ionization of body target material surface, and make plasma-deposited on fiber end face, form two dimension
Semiconductive thin film.In deposition process, can control to sink by controlling the parameter such as sedimentation time or depositing temperature
Long-pending two-dimensional semiconductor film thickness；Also may select any bi-material alternating growth, constitute hetero-junctions super brilliant
Lattice.
The preparation method of the two-dimensional semiconductor saturable absorbing mirror that the present invention provides, utilizes magnetron sputtering method or arteries and veins
Rushing radio frequency sedimentation, preparation process is simple, can be mass-produced.Simultaneously in deposition process, by controlling
The temperature of deposition, time etc. can control thickness and the uniformity of the two-dimensional semiconductor thin film of deposition, thus can
Produce in enormous quantities, and make the two-dimensional semiconductor saturable absorbing mirror specification of making consistent；The two dimension prepared half
Conductor saturable absorbing mirror bandwidth can be extended to infrared light from visible ray.Prepared two-dimensional semiconductor saturable
Absorbing mirror is made up of fiber end face, two-dimensional semiconductor thin film and gold film, has high damage threshold, and makes
Used time is hardly damaged；Can prepare in batches in the preparation, and with low cost, replicability is strong；Simultaneously because of collection
Become on fiber end face, in use only need to by directly fused for this device in fiber laser system,
The most easy to use and to have high reliability high.These features make to use this two-dimensional semiconductor saturable to inhale
Receive the pulse optical fiber that mirror is prepared from, the advantage with all-fiber, high reliability, developed
Pulse optical fiber can be suitably applied the seed source as amplifier through pulse amplifying device.Easily
In being prepared as product, and carry out achievements conversion.
As it is shown on figure 3, embodiments provide a kind of pulse optical fiber, for linear cavity structure,
Its structure includes semiconductor pump laser 1, optical coupling assembly 2, resonator cavity.Wherein, resonator cavity includes
High-gain Active Optical Fiber 3, fiber grating 4, the two-dimensional semiconductor saturable absorbing mirror 5 prepared by said method
And optoisolator 6.Wherein optical coupling assembly 2 can use wavelength division multiplexer.
The principle of this pulse optical fiber is, the pump light that semiconductor pump laser 1 produces is through optics
Coupling assembly 2 is coupled into resonator cavity, and provides gain for Active Optical Fiber 3, and the vibration through resonator cavity is entered
And produce laser.Two-dimensional semiconductor saturable absorbing mirror 5 is to Laser Modulation, and then produces laser pulse.Tool
Body ground, saturable absorbing mirror 5 can provide saturable by two-dimensional semiconductor thin film 101 or 102 to resonator cavity
Absorption modulation, it is achieved the self-starting of pulse laser.The optically coupled device of pulse laser 2 and optoisolator 6 are defeated
Go out.
Specifically, fiber grating 5 can be bragg grating or chirped fiber grating, described optical fiber light
Grid have high permeability to pump light, but have certain reflectance, the span of described reflectance to laser
For 10-99%.Described fiber grating is equivalent to the reflecting mirror of an optical-fiber type, it is possible to provide feedback, light to light
Fine grating and saturable absorbing mirror constitute the resonator cavity of laser instrument.Active Optical Fiber is the gain media of laser instrument.
As shown in Figure 4, present invention also offers another kind and there is the pulse optical fiber from enlarging function,
Including: semiconductor pump laser 1, optical coupling assembly 2, resonator cavity, amplifier 7.This resonator cavity is
Linear cavity structure, including high-gain Active Optical Fiber 3, two-dimensional semiconductor saturable absorbing mirror 4 as above,
Fiber grating 5.The assembly of described amplifier 7 is high-gain Active Optical Fiber.Specifically, fiber grating 5 can
For bragg grating or chirped fiber grating, described fiber grating pair pump light has high permeability,
But have certain reflectance (span is 10% to 99%) to laser, fiber grating 5 is directly write system and is existed
On high-gain Active Optical Fiber 3, its side is that opposite side is as the high-gain Active Optical Fiber 3 in resonator cavity
The high-gain Active Optical Fiber 7 of amplifier.Optoisolator 6 can prevent the feedback of pulse laser.
Described pulse optical fiber has the advantage such as all-fiber, high reliability, has both been suitable to achievements conversion,
It is with a wide range of applications again.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all at this
Any amendment, equivalent and the improvement etc. made within bright spirit and principle, should be included in the present invention
Protection domain within.
Claims (10)
1. a two-dimensional semiconductor saturable absorbing mirror, it is characterised in that include optical fiber, be attached to described optical fiber
The two-dimensional semiconductor thin film of end face and be attached to the golden film on described two-dimensional semiconductor thin film.
2. two-dimensional semiconductor saturable absorbing mirror as claimed in claim 1, it is characterised in that described optical fiber
For single-mode fiber, polarization maintaining optical fibre, high-gain Active Optical Fiber or active ZBLAN optical fiber.
3. two-dimensional semiconductor saturable absorbing mirror as claimed in claim 1, it is characterised in that described two dimension
The material of semiconductive thin film is: copper sulfide, gallium selenide, telluride gallium, sulfuration gallium, Germanium selenide, two telluride tungsten,
Two telluride molybdenums, curing hafnium, two selenizing hafniums, two cobaltous selenides, two cobaltous tellurides, two selenizing rheniums, two telluride rheniums,
Stannic disulfide, two Tin diselenide .s, curing niobium, two selenizing niobiums, the titanium sulfide in two, two selenizing titaniums, two sulfur
That changes in tantalum, two selenizing tantalums, curing zirconium, two telluride zirconiums, bismuth sulfide, bismuth selenide, Tellurobismuthite. is any one
Plant or two kinds.
4. two-dimensional semiconductor saturable absorbing mirror as claimed in claim 3, it is characterised in that described arbitrarily
The two-dimensional semiconductor thin film that bi-material is constituted is the hetero-junctions superlattices that bi-material alternating growth is constituted.
5. two-dimensional semiconductor saturable absorbing mirror as claimed in claim 1, it is characterised in that described gold film
Thickness be 500-1000nm.
6. the preparation method of two-dimensional semiconductor saturable absorbing mirror as claimed in claim 1, it is characterised in that
Comprise the following steps:
Optical fiber is cut；
Optical fiber after cutting and two-dimensional semiconductor target are placed in vacuum chamber, by two-dimensional semiconductor target material surface
Ionization is to produce two-dimensional semiconductor plasma so that described two-dimensional semiconductor is plasma-deposited at optical fiber
On the end face exposed, form two-dimensional semiconductor thin film, by controlling sedimentation time and/or depositing temperature, make
Described two-dimensional semiconductor thin film reaches desired thickness；
Gold-plated film on gained two-dimensional semiconductor thin film.
7. a pulse optical fiber, it is characterised in that include semiconductor pump laser, optical coupled
Device, resonator cavity；The pump light that described semiconductor pump laser produces is coupled into through described optical coupler
Described resonator cavity, includes in described resonator cavity in Claims 1 to 5 that the two-dimensional semiconductor described in any one can
Saturated absorption mirror, the flashlight entered in described resonator cavity is carried out by described two-dimensional semiconductor saturable absorbing mirror
Modulation, produces pulse laser.
8. pulse optical fiber as claimed in claim 7, it is characterised in that also wrap in described resonator cavity
Include Active Optical Fiber, fiber grating；Described pump light is coupled into described resonator cavity through described optical coupler,
There is provided gain for described Active Optical Fiber, make described resonator cavity produce laser；Described laser is partly led through described two dimension
Body saturable absorbing mirror is modulated, at described resonator cavity interior resonance and produce pulse laser.
9. pulse optical fiber as claimed in claim 8, it is characterised in that described pulsed optical fibre laser
Device also includes amplifier and optoisolator；The pulse laser of described generation enters back into amplifier and is exaggerated, through institute
State optical coupler, optoisolator output laser pulse.
10. pulse optical fiber as claimed in claim 8, it is characterised in that described fiber grating is
Bragg grating or chirped fiber grating.
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Cited By (20)
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|---|---|---|---|---|
| CN106898940A (en) * | 2017-05-08 | 2017-06-27 | 深圳大学 | A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber |
| CN107204565A (en) * | 2017-05-03 | 2017-09-26 | 浙江大学 | The saturated absorbing body device and purposes of GeSe two-dimensional layers semiconductor and composition |
| CN107370012A (en) * | 2017-08-07 | 2017-11-21 | 中国科学院物理研究所 | Two-dimension nano materials mode-locked all-fiber laser with end face reflection structure |
| WO2017214925A1 (en) * | 2016-06-16 | 2017-12-21 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method therefor, and pulse optical fibre laser |
| CN108123360A (en) * | 2018-01-29 | 2018-06-05 | 南通大学 | A kind of saturable absorption body device applied on optical fiber laser |
| CN108233158A (en) * | 2018-01-29 | 2018-06-29 | 南通大学 | A kind of optical fiber laser |
| WO2018205087A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and pulse fiber laser |
| CN108988116A (en) * | 2018-07-31 | 2018-12-11 | 北京交通大学 | A kind of saturable absorbing mirror based on high non-linearity twin-core fiber |
| CN109149333A (en) * | 2018-09-30 | 2019-01-04 | 深圳大学 | A kind of waveguide integrating optical modulator and preparation method thereof |
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| CN111193174A (en) * | 2020-01-10 | 2020-05-22 | 深圳瀚光科技有限公司 | Saturable absorber based on bismuth telluride heterojunction and preparation method and application thereof |
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| CN111961300A (en) * | 2020-07-10 | 2020-11-20 | 广东工业大学 | Tantalum disulfide-based saturable absorber, preparation method thereof and laser mode locking application |
| CN112421361A (en) * | 2020-11-26 | 2021-02-26 | 中国林业科学研究院木材工业研究所 | Ultraviolet ultrafast laser for wood processing |
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| CN116316033A (en) * | 2023-05-24 | 2023-06-23 | 青岛翼晨镭硕科技有限公司 | Semiconductor saturable absorber mirror, preparation method thereof and laser |
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| CN107204565A (en) * | 2017-05-03 | 2017-09-26 | 浙江大学 | The saturated absorbing body device and purposes of GeSe two-dimensional layers semiconductor and composition |
| CN106898940A (en) * | 2017-05-08 | 2017-06-27 | 深圳大学 | A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber |
| WO2018205087A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and pulse fiber laser |
| CN107370012A (en) * | 2017-08-07 | 2017-11-21 | 中国科学院物理研究所 | Two-dimension nano materials mode-locked all-fiber laser with end face reflection structure |
| CN108123360A (en) * | 2018-01-29 | 2018-06-05 | 南通大学 | A kind of saturable absorption body device applied on optical fiber laser |
| CN108233158A (en) * | 2018-01-29 | 2018-06-29 | 南通大学 | A kind of optical fiber laser |
| CN108123360B (en) * | 2018-01-29 | 2020-05-15 | 南通大学 | Saturable absorber device applied to optical fiber laser |
| CN108233158B (en) * | 2018-01-29 | 2020-02-04 | 南通大学 | Optical fiber laser |
| CN108988116A (en) * | 2018-07-31 | 2018-12-11 | 北京交通大学 | A kind of saturable absorbing mirror based on high non-linearity twin-core fiber |
| CN109167239B (en) * | 2018-09-27 | 2019-10-01 | 电子科技大学 | A kind of Gao Zhongying adjustable optic fibre Fa-Po cavity mode-locked laser |
| CN109167239A (en) * | 2018-09-27 | 2019-01-08 | 电子科技大学 | A kind of Gao Zhongying adjustable optic fibre Fa-Po cavity mode-locked laser |
| CN109149333A (en) * | 2018-09-30 | 2019-01-04 | 深圳大学 | A kind of waveguide integrating optical modulator and preparation method thereof |
| CN109149333B (en) * | 2018-09-30 | 2023-12-12 | 深圳大学 | Waveguide integrated optical modulator and preparation method thereof |
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