CN107204565A - The saturated absorbing body device and purposes of GeSe two-dimensional layers semiconductor and composition - Google Patents
The saturated absorbing body device and purposes of GeSe two-dimensional layers semiconductor and composition Download PDFInfo
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- CN107204565A CN107204565A CN201710304740.8A CN201710304740A CN107204565A CN 107204565 A CN107204565 A CN 107204565A CN 201710304740 A CN201710304740 A CN 201710304740A CN 107204565 A CN107204565 A CN 107204565A
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- gese
- absorbing body
- dimensional
- saturated absorbing
- body device
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
Abstract
The invention discloses a kind of GeSe two-dimensional layers semiconductor and the saturated absorbing body device and purposes of composition.Including the matrix being encapsulated in transparent vessel as the two-dimensional layer semiconductor and carrying of the saturated absorbing body saturated absorbing body, saturated absorbing body is GeSe two-dimensional layer semiconductors.Present invention finds the new material with excellent saturated absorption characteristic, new approaches are provided to develop new saturated absorbing body, its device has the advantages that to prepare simple, suitable large-scale production, small volume, can constitute polytype mode-locking device, can be applied to the fields such as pulse optical fiber.
Description
Technical field
The present invention relates to nonlinear optical material and device, more particularly to a kind of GeSe two-dimensional layers semiconductor and structure
Into saturated absorbing body device and purposes, locked mode available for optical fiber laser, adjust Q, laser beam shaping etc..
Background technology
Laser is divided into continuous wave laser and pulse laser from operation.Pulse laser refers to single laser pulse width
The laser that degree is less than 0.25 second, just worked once at interval of certain time, it has larger power output, is suitable for laser and beats
Mark, cutting, ranging etc..Common pulse laser has yttrium-aluminium-garnet (YAG) laser, ruby in solid state laser to swash
Light device, neodymium glass laser etc., also nitrogen molecular laser, excimer laser etc..Q and locked mode is adjusted to obtain pulse laser
Two kinds of the most frequently used technologies., can be from many different ripples with continuing to develop for Q and mode-locking technique and gain medium is adjusted
Pulse output is obtained in long laser system.Producing pulse mainly has actively and passively two ways, and actively modulation needs swashing
Additional modulator (acousto-optic/electrooptic modulator) is realized in optical cavity, both adds system cost, also reduces system portable；And
Passive modulation is increasingly becoming current main flow selection and developing direction without any external devices.It is most of at present commercial
Changing pulse laser is realized using passive mode, and its key is to add saturated absorbing body in intracavitary, plays amplitude automodulation
Effect, i.e., when input light intensity is bigger, the absorption of saturated absorbing body is smaller, be conducive to suppress continuous wave realize pulse export.
At present common saturated absorbing body include dyestuff, semiconductor saturated absorption mirror and CNT emerging recently and
Graphene etc..Dyestuff saturated absorbing body due to absorber dyestuff due to its it is apt to deteriorate and poisonous the shortcomings of, use is gradually few；Half
Conductor saturated absorption mirror passes through the development of many decades, and technology relative maturity, output is stable, but its light injury threshold is low, application
Wave band is narrow, recovery time length (about a few nanoseconds), complicated, and preparation condition requires high, and can only be in specific linear topology
Applied in chamber, greatly limit it and further develop.Single-walled carbon nanotube has excellent saturated absorption response near infrared band,
But itself it is a kind of anisotropic material, the direction of growth, diameter, length, chirality etc. are difficult to select and controlled during preparation,
And the factor such as the optical absorption characteristics of single-walled carbon nanotube and carbon pipe diameter, chirality is related, therefore by the accurate control to locked mode
Bring problem；And single-walled carbon nanotube easily tangles bunchy, higher linear impairments are brought.
The two-dimensional materials such as graphene are pursued as saturated absorbing body by researcher in recent years, and its basic ideas is single original
Sub thick graphene film is dispersed in transparent polymer or is transferred directly to optical fiber head section as saturated absorbing body.But stone
The characteristic of the black alkene saturated absorbing body dirac band structure unique dependent on monatomic thick graphene, with the increasing of the atom number of plies
Plus, the change of properties such as carrier mobility drastically declines, band structure and optical absorption characteristics is larger, makes polyatom layer graphene should
With being restricted.
The content of the invention
It is an object of the invention to provide a kind of GeSe two-dimensional layers semiconductor and the saturated absorbing body device and use of composition
On the way, it is a kind of brand-new material system with excellent saturated absorption characteristic, is provided for the new saturated absorbing body of exploitation bigger
Space.
The technical scheme is that：
First, a kind of GeSe two-dimensional layers semiconductor：
Described GeSe two-dimensional layers semiconductor is made up of the two-dimentional GeSe molecular layers of multilayer.The number of plies is 2-8 layers.
Described GeSe two-dimensional layer semiconductors are prepared in the following ways：
1) GeSe blocks are added in organic solution, ultrasonication 1h obtains GeSe dispersion liquids；
2) GeSe dispersion liquids are subjected to centrifugal treating, obtain GeSe two-dimensional layer semiconductors.
Described organic solution uses ethanol, isopropanol, N,N-dimethylformamide, 1-METHYLPYRROLIDONE, N- hexamethylenes
Base pyrrolidones, dodecyl sodium sulfate and sodium cholate solution.
For ethanol, isopropanol, DMF, 1-METHYLPYRROLIDONE, N- cyclohexyl pyrrolidones, it is desirable to
Its mass concentration is more than 99%, and impurity mass concentration is less than 1%.
For dodecyl sodium sulfate and sodium taurocholate, its concentration for adding water formation solution is 2 g/l.
2nd, the GeSe two-dimensional layers semiconductor is used for the purposes for preparing saturated absorbing body device.
3rd, a kind of saturated absorbing body device based on GeSe two-dimensional layer semiconductors：
Including the base being encapsulated in transparent base as the two-dimensional semiconductor and carrying of the saturated absorbing body saturated absorbing body
Body, the two-dimensional semiconductor is any GeSe two-dimensional layers semiconductors of claim 1-3.
Described matrix is organic polymer.
Described organic polymer is polyvinyl alcohol or polymethyl methacrylate.
Described saturated absorbing body device is prepared in the following ways：Scattered in deionized water, the stirring by matrix
It is dispersed, obtain the matrix aqueous solution；The solution of GeSe two-dimensional layer semiconductors is well mixed with the matrix aqueous solution, table is poured into
In the smooth surface plate in face, and level is put in the PVA film that smooth drying is dried to obtain in drying box, takes in PVA film
Part in uniform thickness is used as saturated absorbing body device.
4th, a kind of saturated absorbing body device based on GeSe two-dimensional layer semiconductors is applied to the fields such as pulse laser.
It is particularly used in the locked mode of optical fiber laser, adjusts Q, laser beam shaping etc..
The beneficial effects of the invention are as follows：
(1) GeSe two-dimensional layers semiconductor used in the present invention can be peeled off on a large scale, high-efficient simple using liquid phase
Prepared by method, effectively reduce cost, improve production efficiency.And multilayer GeSe has low saturated absorption threshold value and higher
Modulation depth, for graphene, is influenceed smaller by the number of plies.
(2) present invention have found a kind of brand-new material system with excellent saturated absorption characteristic, new full to develop
New approaches are provided with absorber, its device, which has, to be prepared simple, suitable large-scale production, small volume, can constitute polytype
The advantage of mode-locking device, can be applied to the fields such as pulse optical fiber.
Brief description of the drawings
Fig. 1 is the saturated absorbing body Z scanning curve figures that embodiment 1 is obtained.
Fig. 2 is the saturated absorbing body Z scanning curve figures that embodiment 2 is obtained.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples.
Saturated absorbing body device of the invention based on GeSe two-dimensional layer semiconductors, including it is encapsulated in conduct in transparent vessel
The two-dimensional semiconductor of saturated absorbing body and the matrix for carrying the saturated absorbing body, the two-dimensional semiconductor of saturated absorbing body use GeSe
Two-dimensional layer crystal, matrix can use organic polymer.
Preferably, the GeSe two-dimensional layers semiconductor equalizing of following examples of the present invention is peeled off GeSe blocks using liquid phase and made
It is standby to obtain, specifically prepare in the following ways：
1) GeSe blocks are added in solution, ultrasonication 1h obtains GeSe dispersion liquids；
2) GeSe dispersion liquids are subjected to centrifugal treating, obtain GeSe two-dimensional layer semiconductors.
Above-mentioned solution can use ethanol, isopropanol, N,N-dimethylformamide, 1-METHYLPYRROLIDONE, N- cyclohexyl pyrroles
Pyrrolidone, dodecyl sodium sulfate, sodium cholate solution, using ethanol, isopropanol, DMF, N- methylpyrroles
Alkanone, the concentration of N- cyclohexyl pyrrolidones be more than 99%, use dodecyl sodium sulfate, sodium cholate solution concentration for 2 grams/
Rise.
Below, the present invention will be more fully described by embodiment, but the embodiment is understood not to appoint
Where formula limits the scope of the present invention.
The specific embodiment of the present invention is as follows：
Embodiment 1
(1) 0.04g GeSe blocks are added in 40ml ethanol solutions, ultrasonication 1h, take it is broken after dispersion liquid from
The heart, deionized water is washed twice, and is obtained GeSe two-dimensional layer semiconductors, is finally dispersed in 0.4ml deionized waters.GeSe two dimensions
Layered semiconductor detects that its number of plies is 2-8 layers by AFM (AFM).
(2) 0.05g polyvinyl alcohol (PVA) powder is dispersed in 1ml deionized waters, 85 DEG C of stirring 2h to water white transparency.
(3) by the aqueous solution of 0.4ml GeSe two-dimensional layer semiconductors and the 1ml PVA aqueous solution and it is well mixed, pours into table
In the smooth surface plate in face, and level is put in drying box and dries the PVA film that 5h obtains smooth drying.
(4) part wherein in uniform thickness is chosen to use as saturated absorbing body device.Using femtosecond laser (130fs,
800nm, 1KHz), study its saturated absorption characteristic by Z scanning techniques, its result such as Fig. 1 can be observed obvious saturation and inhale
Receive characteristic.
Embodiment 2
(1) 0.04g GeSe blocks are added in 40ml ethanol solutions, ultrasonication 1h, take it is broken after dispersion liquid from
The heart, obtains GeSe two-dimensional layer semiconductors, is finally dispersed in 0.4ml ethanol.GeSe two-dimensional layer semiconductors pass through atomic force
Microscope (AFM) detects that its number of plies is 2-8 layers.
(2) 0.2g polymethyl methacrylates (PMMA) powder is dispersed in 4ml DMFs (DMF),
70 DEG C are stirred 2h to water white transparency.
(3) ethanol solution of 0.4ml GeSe two-dimensional layer semiconductors is well mixed with 4ml PMMA DMF solution, fallen
Enter in the smooth surface plate in surface, and level is put in drying box and dries the PMMA films that 5h obtains smooth drying.
(4) part wherein in uniform thickness is chosen to use as saturated absorbing body device.Using femtosecond laser (130fs,
800nm, 1KHz), its saturated absorption characteristic studied by Z scanning techniques, obvious saturated absorption characteristic can be observed.
Embodiment 3
(1) 0.04g GeSe blocks are added in 40ml 1-METHYLPYRROLIDONEs (NMP) solution, ultrasonication 1h takes
Dispersion liquid centrifugation after broken, deionized water washes twice, obtains GeSe two-dimensional layer semiconductors, be finally dispersed in 0.4ml and go
In ionized water.GeSe two-dimensional layers semiconductor detects that its number of plies is 2-8 layers by AFM (AFM).
(2) 0.05g polyvinyl alcohol (PVA) powder is dispersed in 1ml deionized waters, 85 DEG C of stirring 2h to water white transparency.
(3) by the aqueous solution of 0.4ml GeSe two-dimensional layer semiconductors and the 4ml PVA aqueous solution and it is well mixed, pours into table
In the smooth surface plate in face, and level is put in drying box and dries the PVA film that 5h obtains smooth drying.
(4) part wherein in uniform thickness is chosen to use as saturated absorbing body device.Using femtosecond laser (130fs,
800nm, 1KHz), its saturated absorption characteristic studied by Z scanning techniques, obvious saturated absorption characteristic can be observed.
Embodiment 4
(1) 0.04g GeSe blocks are added in 40ml dodecyl sodium sulfates (SDS) solution, ultrasonication 1h takes brokenly
Dispersion liquid centrifugation after broken, deionized water washes twice, and obtains GeSe two-dimensional layer semiconductors, be finally dispersed in 0.4ml go from
In sub- water.GeSe two-dimensional layers semiconductor detects that its number of plies is 2-8 layers by AFM (AFM).
(2) 0.05g polyvinyl alcohol (PVA) powder is dispersed in 1ml deionized waters, 85 DEG C of stirring 2h to water white transparency.
(3) by the aqueous solution of 0.4ml GeSe two-dimensional layer semiconductors and the 4ml PVA aqueous solution and it is well mixed, pours into table
In the smooth surface plate in face, and level is put in drying box and dries the PVA film that 5h obtains smooth drying.
(4) part wherein in uniform thickness is chosen to use as saturated absorbing body device.Using femtosecond laser (130fs,
800nm, 1KHz), its saturated absorption characteristic studied by Z scanning techniques, obvious saturated absorption characteristic can be observed.
Claims (9)
1. a kind of GeSe two-dimensional layers semiconductor, it is characterized in that：
Described GeSe two-dimensional layers semiconductor is made up of the two-dimentional GeSe molecular layers of multilayer.
2. a kind of GeSe two-dimensional layers semiconductor according to claim 1, it is characterized in that：
Described GeSe two-dimensional layer semiconductors are prepared in the following ways：
1) GeSe blocks are added in organic solution, ultrasonication 1h obtains GeSe dispersion liquids；
2) GeSe dispersion liquids are subjected to centrifugal treating, obtain GeSe two-dimensional layer semiconductors.
3. a kind of GeSe two-dimensional layers semiconductor according to claim 2, it is characterized in that：
Described organic solution uses ethanol, isopropanol, N,N-dimethylformamide, 1-METHYLPYRROLIDONE, N- cyclohexyl pyrroles
Pyrrolidone, dodecyl sodium sulfate and sodium cholate solution.
4. a kind of purposes of any described GeSe two-dimensional layers semiconductors of claim 1-3, it is characterized in that：
The GeSe two-dimensional layers semiconductor is used for the purposes for preparing saturated absorbing body device.
5. a kind of saturated absorbing body device based on GeSe two-dimensional layer semiconductors, it is characterised in that：
Including the matrix being encapsulated in transparent base as the two-dimensional semiconductor and carrying of the saturated absorbing body saturated absorbing body, institute
It is any GeSe two-dimensional layers semiconductors of claim 1-3 to state two-dimensional semiconductor.
6. a kind of saturated absorbing body device based on GeSe two-dimensional layer semiconductors according to claim 5, its feature exists
In：Described matrix is organic polymer.
7. a kind of saturated absorbing body device based on GeSe two-dimensional layer semiconductors according to claim 6, its feature exists
In：Described organic polymer is polyvinyl alcohol or polymethyl methacrylate.
8. according to a kind of any described saturated absorbing body devices based on GeSe two-dimensional layer semiconductors of claim 5-7, its
It is characterised by：Described saturated absorbing body device is prepared in the following ways：Scattered in deionized water, the stirring by matrix
It is dispersed, obtain the matrix aqueous solution；The solution of GeSe two-dimensional layer semiconductors is well mixed with the matrix aqueous solution, table is poured into
In the smooth surface plate in face, and level is put in the PVA film that smooth drying is dried to obtain in drying box, takes in PVA film
Part in uniform thickness is used as saturated absorbing body device.
9. a kind of purposes of saturated absorbing body device based on GeSe two-dimensional layer semiconductors according to claim 5, its
It is characterised by：The saturated absorbing body device is applied to the fields such as pulse laser.
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| US20050242364A1 (en) * | 2004-04-15 | 2005-11-03 | Moustakas Theodore D | Optical devices featuring textured semiconductor layers |
| US20160238746A1 (en) * | 2013-02-04 | 2016-08-18 | Lockheed Martin Corporation | Optical apparatus and method of forming a gradient index device |
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Application publication date: 20170926 |