CN105071215A - Purpose of CaCuSi4O10 two-dimensional crystal, and saturation absorber device composed of the crystal - Google Patents
Purpose of CaCuSi4O10 two-dimensional crystal, and saturation absorber device composed of the crystal Download PDFInfo
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- CN105071215A CN105071215A CN201510535460.9A CN201510535460A CN105071215A CN 105071215 A CN105071215 A CN 105071215A CN 201510535460 A CN201510535460 A CN 201510535460A CN 105071215 A CN105071215 A CN 105071215A
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Abstract
The invention discloses a purpose of a CaCuSi4O10 two-dimensional crystal, and a saturation absorber device composed of the crystal. The device comprises a two-dimensional crystal packaged in a transparent container as a saturation absorber and a matrix bearing the saturation absorber, wherein the saturation absorber is a CaCuSi4O10 two-dimensional layered crystal. According to the invention, a new material system with an excellent saturation absorption characteristic is discovered, greater space is provided for development of a novel saturation absorber, and the device has the advantages of low price, suitability for large-scale preparation, small size and capability of forming various types of mold locking devices, thereby being applied to the fields of a pulsed optical fiber laser and the like.
Description
Technical field
The present invention relates to nonlinear optical material and device, particularly relate to a kind of CaCuSi
4o
10the purposes of two dimensional crystal and the saturated absorbing body device of formation thereof, can be used for the locked mode of fiber laser, adjust Q, laser beam shaping etc.
Background technology
Pulse laser is just playing a part more and more important in the fields such as laser manufacture processing industry, scientific research.Along with the development adjusting Q and mode-locking technique and gain medium, can obtain pulse and export from the laser system of many different wave lengths.Produce pulse to mainly contain initiatively and passive two kinds of modes, initiatively modulation needs additional modulator (acousto-optic/electrooptic modulator) in laser cavity to realize, and both adds system cost, and also reduces system portable; And passive modulation is without the need to any external devices, thus becomes current main flow gradually and select and developing direction.Current most of commercialization pulse laser is all adopt passive mode to realize, two kinds of wherein the most frequently used passive modulation modes adjust Q and mode-locking technique, its key adds saturated absorbing body in chamber, play the effect of amplitude automodulation, namely when input light intensity is larger, the absorption of saturated absorbing body is less, is conducive to suppressing continuous wave to realize pulse and exports.
Saturated absorbing body common at present comprises dyestuff, semiconductor saturated absorption mirror and carbon nano-tube emerging recently and Graphene etc.Dyestuff saturated absorbing body, because the self-recovery time is at nanosecond order, can only produce the pulse of nanosecond order, and its stability is also a larger inferior position; Semiconductor saturated absorption mirror is through the development of many decades, technology relative maturity, stable output, but its light injury threshold is low, application band is narrow, recovery time long (about a few nanosecond), complex structure, preparation condition requires high, and can only apply in specific linear topology chamber, greatly limit it and further develops.Single Walled Carbon Nanotube has excellent saturated absorption response near infrared band, but itself be a kind of anisotropic material, during preparation, the direction of growth, diameter, length, chirality etc. are difficult to select and control, and the factors such as the optical absorption characteristics of Single Walled Carbon Nanotube and carbon pipe diameter, chirality are relevant, bring a difficult problem therefore will to the accurate control of locked mode; The bunchy and Single Walled Carbon Nanotube is easily tangled, brings higher linear impairments.The two-dimensional material such as Graphene are subject to pursuing of researcher as saturated absorbing body in recent years, and its basic ideas are that monatomic thick graphene film is dispersed in transparent polymer or is transferred directly to optical fiber head section as saturated absorbing body.But the characteristic of Graphene saturated absorbing body depends on the dirac band structure of monatomic thick Graphene uniqueness, along with the increase of the atom number of plies, the change of properties such as carrier mobility sharply declines, band structure and optical absorption characteristics are comparatively large, polyatom layer graphene is applied and is restricted.At present, cheapness, the efficiently preparation of monoatomic layer Graphene remain a difficult problem urgently to be resolved hurrily at present.
Summary of the invention
The object of this invention is to provide a kind of CaCuSi
4o
10the purposes of two dimensional crystal and the saturated absorbing body device of formation thereof, this device has the advantages that structure is simple, cost is low, and have found a kind of material system with excellent saturated absorption characteristic completely newly, for development of new saturated absorbing body provides larger space.
Technical scheme of the present invention is:
One, a kind of CaCuSi
4o
10the purposes of two dimensional crystal: described CaCuSi
4o
10two dimensional crystal is for the preparation of the purposes of saturated absorbing body.
Two, a kind of based on CaCuSi
4o
10the saturated absorbing body device of two dimensional crystal: comprise the matrix be encapsulated in as the two dimensional crystal of saturated absorbing body and this saturated absorbing body of carrying in transparent vessel, the described two dimensional crystal as saturated absorbing body is CaCuSi
4o
10two-dimensional layer crystal.
Described matrix is organic polymer.
Described organic polymer is polyvinyl alcohol or polymethyl methacrylate.
Three, a kind of based on CaCuSi
4o
10the purposes of the saturated absorbing body device of two dimensional crystal: described saturated absorbing body device application is in fields such as pulse lasers.
The invention has the beneficial effects as follows:
(1) CaCuSi used in the present invention
4o
10the preparation of method that two dimensional crystal can use acid solution to peel off on a large scale, at an easy rate, compares and prepares Graphene with conventional complicated CVD method at present and effectively reduce cost.
(2) the present invention have found a kind of material system with excellent saturated absorption characteristic completely newly, for development of new saturated absorbing body provides larger space.
Accompanying drawing explanation
Fig. 1 be embodiment 1 correspondence based on CaCuSi
4o
10the saturated absorbing body Z scanning curve of two dimensional crystal.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
The present invention is based on CaCuSi
4o
10the saturated absorbing body device of two dimensional crystal, comprise the matrix be encapsulated in as the two dimensional crystal of saturated absorbing body and this saturated absorbing body of carrying in transparent vessel, the two dimensional crystal of saturated absorbing body adopts CaCuSi
4o
10two-dimensional layer crystal, matrix can adopt organic polymer.
Preferably, the CaCuSi of following examples of the present invention
4o
10two dimensional crystal all uses acid solution to peel off CaCuSi
4o
10three-dimensional crystal and preparing, specifically prepare in the following ways:
1) by CaCuSi
4o
10crystal adds in acid solution, ultrasonic process in water-bath, then leaves standstill 5 ~ 24 hours;
2) get upper strata 2/3 clear liquid, carry out centrifugal treating, then washed with de-ionized water 2 ~ 3 times, obtain two-dimensional layer CaCuSi
4o
10crystal.
Above-mentioned acid solution can adopt hydrochloric acid, nitric acid or sulfuric acid solution, and the concentration adopting hydrochloric acid is 1 ~ 12 mol/L, and the concentration adopting nitric acid is 3 ~ 14.4 mol/L, and the concentration adopting sulfuric acid is 3 ~ 18 mol/L.
Specific embodiments of the invention are as follows:
Embodiment 1
The present embodiment illustrates how to prepare the CaCuSi be carried in polymer polyethylene alcohol (PVA)
4o
10the saturated absorbing body of two dimensional crystal.
(1) by the CaCuSi of 0.15g
4o
10crystal adds in the 20ml hydrochloric acid solution of 3.5mol/L, ultrasonic process, and leave standstill 12 hours, get supernatant liquor 2/3 centrifugal, washed with de-ionized water 3 times, obtains two-dimensional layer CaCuSi
4o
10monocrystalline.Finally be dispersed in 3ml deionized water.
(2) by 0.2g polyvinyl alcohol (PVA) powder dispersion in 4ml deionized water, 80 DEG C stir 2h, make powder dissolution.
(3) by the 4mlPVA aqueous solution and 3mlCaCuSi
4o
10aqueous solution is even, pours in smooth surface even curface ware, and level is put in the dry PVA film obtaining smooth drying for two days in drying box.
(4) select wherein regular part and the uniform part of thickness, use as saturated absorbing body device.Utilize femtosecond laser (130fs, 800nm, 1KHz), study its saturated absorption characteristic by perforate Z scanning technique, its result, as Fig. 1, can be observed obvious saturated absorption characteristic.
Embodiment 2
The present embodiment illustrates the saturated absorbing body how preparing the CaCuSi4O10 two dimensional crystal be carried in polymer poly methyl methacrylate (PMMA).
(1) by the CaCuSi of 0.15g
4o
10crystal adds in the 20ml hydrochloric acid solution of 3.5mol/L, ultrasonic process, and leave standstill 12 hours, get supernatant liquor 2/3 centrifugal, washed with de-ionized water 3 times, obtains two-dimensional layer CaCuSi
4o
10monocrystalline.Finally be dispersed in 3mlN-vinyl pyrrolidone (NVP).
(2) by 0.2gPMMA powder dispersion in 4mlNVP, stir 2h, make powder dissolution, then with (1) gained CaCuSi
4o
10nVP solution mixing.
(3) with the rotating speed of 1000rpm by (2) gained solution multiple spin coating at thickness be about 0.2mm sheet glass on, and its level is placed in drying box 0.5MPa pressure drying 24 hours at 90 DEG C, solvent is volatilized completely, namely obtains the PMMA film of smooth drying.
(4) choose the uniform part of wherein thickness to use as saturated absorbing body device.Utilize femtosecond laser (130fs, 800nm, 1KHz), study its saturated absorption characteristic by perforate Z scanning technique, can be observed obvious saturated absorption characteristic equally.
Above-mentioned specific embodiment is used for explaining and the present invention is described, instead of limits the invention, and in the protection range of spirit of the present invention and claim, any amendment make the present invention and change, all fall into protection scope of the present invention.
Claims (5)
1. a CaCuSi
4o
10the purposes of two dimensional crystal, is characterized in that: described CaCuSi
4o
10two dimensional crystal is for the preparation of the purposes of saturated absorbing body.
2. one kind based on CaCuSi
4o
10the saturated absorbing body device of two dimensional crystal, is characterized in that:
Comprise the matrix be encapsulated in as the two dimensional crystal of saturated absorbing body and this saturated absorbing body of carrying in transparent vessel, the described two dimensional crystal as saturated absorbing body is CaCuSi
4o
10two-dimensional layer crystal.
3. one according to claim 2 is based on CaCuSi
4o
10the saturated absorbing body device of two dimensional crystal, is characterized in that: described matrix is organic polymer.
4. one according to claim 3 is based on CaCuSi
4o
10the saturated absorbing body device of two dimensional crystal, is characterized in that: described organic polymer is polyvinyl alcohol or polymethyl methacrylate.
5. one according to claim 2 is based on CaCuSi
4o
10the purposes of the saturated absorbing body device of two dimensional crystal, is characterized in that: described saturated absorbing body device application is in fields such as pulse lasers.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510535460.9A CN105071215B (en) | 2015-08-27 | 2015-08-27 | CaCuSi4O10The purposes of two dimensional crystal and its saturated absorbing body device of composition |
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| CN201510535460.9A CN105071215B (en) | 2015-08-27 | 2015-08-27 | CaCuSi4O10The purposes of two dimensional crystal and its saturated absorbing body device of composition |
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| CN105071215A true CN105071215A (en) | 2015-11-18 |
| CN105071215B CN105071215B (en) | 2018-08-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204565A (en) * | 2017-05-03 | 2017-09-26 | 浙江大学 | The saturated absorbing body device and purposes of GeSe two-dimensional layers semiconductor and composition |
| CN113479896A (en) * | 2021-07-16 | 2021-10-08 | 常州大学 | Method for preparing calcium silicate-copper material by using attapulgite and biomass and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140072790A1 (en) * | 2012-09-12 | 2014-03-13 | University Of Georgia Research Foundation, Inc. | Metal silicate nanosheets, methods of making metal silicate nanosheets, and methods of use |
| CN104158079A (en) * | 2013-10-10 | 2014-11-19 | 中国科学院上海光学精密机械研究所 | Saturable absorber device based on MoS2 or MoSe2 two-dimensional nanosheet |
-
2015
- 2015-08-27 CN CN201510535460.9A patent/CN105071215B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140072790A1 (en) * | 2012-09-12 | 2014-03-13 | University Of Georgia Research Foundation, Inc. | Metal silicate nanosheets, methods of making metal silicate nanosheets, and methods of use |
| CN104158079A (en) * | 2013-10-10 | 2014-11-19 | 中国科学院上海光学精密机械研究所 | Saturable absorber device based on MoS2 or MoSe2 two-dimensional nanosheet |
Non-Patent Citations (2)
| Title |
|---|
| K.S.NOVOSELOV ET AL.: "Two-dimensional atomic crystals", 《PNAS》 * |
| WEIBO CHEN ET AL.: "Near-infrared emission and photon energy upconversion of two-dimensional copper silicates", 《THE JOURNAL OF PHYSICAL CHEMISTRY》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107204565A (en) * | 2017-05-03 | 2017-09-26 | 浙江大学 | The saturated absorbing body device and purposes of GeSe two-dimensional layers semiconductor and composition |
| CN113479896A (en) * | 2021-07-16 | 2021-10-08 | 常州大学 | Method for preparing calcium silicate-copper material by using attapulgite and biomass and application thereof |
| CN113479896B (en) * | 2021-07-16 | 2023-11-14 | 常州大学 | Method for preparing calcium copper silicate material by using attapulgite and biomass and application of calcium copper silicate material |
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|---|---|
| CN105071215B (en) | 2018-08-07 |
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