CN109980495B - Saturable absorber preparation method, saturable absorber and optical fiber laser - Google Patents

Saturable absorber preparation method, saturable absorber and optical fiber laser Download PDF

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CN109980495B
CN109980495B CN201711462693.6A CN201711462693A CN109980495B CN 109980495 B CN109980495 B CN 109980495B CN 201711462693 A CN201711462693 A CN 201711462693A CN 109980495 B CN109980495 B CN 109980495B
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saturable absorber
laser
indium diselenide
fiber
optical fiber
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CN109980495A (en
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曾远康
龙慧
邓俊贤
曾龙辉
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Hong Kong Polytechnic University HKPU
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

The application discloses a preparation method of a saturable absorber, the saturable absorber and an optical fiber laser. The preparation method of the saturable absorber comprises the following steps: putting bulk indium diselenide in an organic solvent; placing an organic solvent containing indium diselenide in an ultrasonic machine to obtain a suspension; centrifuging the suspension, and extracting centrifuged supernatant liquid; dropping the upper layer liquid on a quartz plate and drying to obtain a two-dimensional nano-quartz plate of indium diselenide; and polishing the indium diselenide two-dimensional nano quartz plate to obtain the saturable absorber. The saturable absorber preparation method disclosed by the application can be used for preparing the saturable absorber in a cheap mode, and is suitable for large-scale preparation of the saturable absorber.

Description

Saturable absorber preparation method, saturable absorber and optical fiber laser
Technical Field
The invention relates to the field of saturable absorber devices of lasers, in particular to a saturable absorber preparation method, a saturable absorber and a fiber laser.
Background
Ultrashort pulse laser has extremely wide application, such as fields of ultrafast optical switch, optical fiber communication, optical fiber sensing, industrial processing, laser guidance, laser medical treatment and the like, passive mode locking is a common method for generating ultrashort pulse laser at present, and a saturable absorber is a core component for passive mode locking. At present, the passive mode-locking fiber laser has wide application prospect in the fields of scientific research, medical treatment and manufacturing due to the advantages of simple structure, convenient maintenance and the like, and becomes a research hotspot.
Currently, semiconductor saturable absorber mirrors (SESAMs), which are composed of iii-v semiconductor single quantum hydrazines or multiple quantum hydrazines grown on the surface of bragg mirrors, are used as core components for mode locking. However, the optical damage threshold of the SESAM is low, the application band is narrow (about 800-.
In recent years, with the development of nanotechnology, a series of carbon nanomaterials such as graphene, graphene oxide, carbon nanotubes, etc. have been widely proven as a saturable absorber for generating ultrashort pulse laser. Especially saturable absorber devices based on single-walled carbon nanotubes (SWNTs). However, SWNTs themselves are anisotropic materials and are difficult to select and control for growth direction, diameter, length, chirality, etc. during fabrication. On the other hand, the light absorption characteristics of the SWNTs are related to the carbon tube diameter, chirality and other factors, which directly affect the performance of the device and further bring a problem to the accuracy of mode locking. Furthermore, SWNTs tend to tangle into bundles, leading to high linearity losses, which limits the output power, repetition rate, pulse width and beam quality of fiber lasers based on SWNT passive mode locking. As for the graphene saturable absorber, the graphene saturable absorber is mainly based on the unique dirac energy band structure of the monoatomic graphene, along with the increase of the number of atomic layers, the carrier mobility is sharply reduced, and the properties such as the energy band structure and the light absorption characteristic are greatly changed, so that the application of the graphene with multiple atomic layers is greatly limited. The problem to be solved at present is to obtain a method for preparing inexpensive graphene having a single atomic layer. The CVD method needs a single crystal copper substrate and a complex equipment process, and has higher cost; the yield of the mechanical stripping method is too low, and metal ions introduced by the chemical stripping method are not easy to completely remove, so that the electronic structure and the performance of the graphene are affected. Therefore, graphene-based devices are also not an effective and inexpensive solution.
Therefore, a new method for preparing a saturable absorber, and a fiber laser are needed.
The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
In view of the above, the invention provides a method for preparing a saturable absorber, a saturable absorber and a fiber laser, wherein the method for preparing the saturable absorber provided by the invention can be used for preparing the saturable absorber in a cheap manner, and the method is suitable for large-scale preparation; the saturable absorber provided by the invention has the advantage of small volume, and can be used for forming various types of mode locking devices; the fiber laser provided by the invention has wide application prospects in the fields of scientific research, medical treatment and manufacturing.
Additional features and advantages of the invention will be set forth in the detailed description which follows, or may be learned by practice of the invention.
According to an aspect of the present invention, there is provided a method for preparing a saturable absorber, the method comprising: putting bulk indium diselenide in an organic solvent; placing an organic solvent containing indium diselenide in an ultrasonic machine to obtain a suspension; centrifuging the suspension, and extracting centrifuged supernatant liquid; dropping the upper layer liquid on a quartz plate and drying to obtain a two-dimensional nano-quartz plate of indium diselenide; and polishing the indium diselenide two-dimensional nano quartz plate to obtain the saturable absorber.
In an exemplary embodiment of the present disclosure, the organic solvent includes: n-cyclohexyl pyrrolidone solvent.
In an exemplary embodiment of the present disclosure, the concentration of the indium diselenide in the N-cyclohexylpyrrolidone solvent is 2 mg/ml.
In an exemplary embodiment of the disclosure, the polishing the diindium triselenide two-dimensional nano quartz plate to obtain a saturable absorber includes: and processing the indium diselenide two-dimensional nano quartz plate in an end face polishing mode to obtain the saturable absorber.
According to an aspect of the present invention, there is provided a saturable absorber including: the saturable absorber is a two-dimensional indium diselenide nanosheet; and the saturable absorber is the saturable absorber prepared by the above method.
According to an aspect of the present invention, there is provided a fiber laser including: the method comprises the following steps: an annular laser cavity; the ring laser cavity comprises: the saturable absorber is made of a two-dimensional indium diselenide nanosheet, and the size and the thickness of the two-dimensional indium diselenide nanosheet are respectively 200nm and 5 nm; wavelength pump source laser; a wavelength division multiplexer; an optical fiber; an isolator; a deflection controller; an output coupler; an optical fiber filter.
In an exemplary embodiment of the present disclosure, the wavelength pump source laser includes: 976nm pump source laser with adjustable pulse width; and a continuous 976nm pump source laser.
In an exemplary embodiment of the present disclosure, the wavelength division multiplexer includes: wavelength division multiplexer at 1060nm wavelength; and a wavelength division multiplexer for 1550nm wavelength.
In an exemplary embodiment of the present disclosure, the optical fiber includes: an ytterbium-doped optical fiber; and an erbium-doped fiber.
In an exemplary embodiment of the present disclosure, the isolator, the deflection controller, the output coupler, and the fiber filter all have a single mode fiber as a basic body.
According to the method for producing a saturable absorber of the present invention, a saturable absorber can be produced in an inexpensive manner, and the production method is suitable for large-scale production of a saturable absorber.
The saturable absorber has the advantage of small volume, and can be used for forming various types of mode locking devices.
The optical fiber laser has wide application prospect in the fields of scientific research, medical treatment and manufacturing.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings. The drawings described below are only some embodiments of the invention and other drawings may be derived from those drawings by a person skilled in the art without inventive effort.
FIG. 1 is a flow diagram illustrating a method of making a saturable absorber in accordance with one exemplary embodiment.
FIG. 2 is a schematic diagram illustrating a method of making a saturable absorber according to another exemplary embodiment.
Fig. 3 is a schematic diagram of a fiber laser shown in accordance with an exemplary embodiment.
Fig. 4 is a schematic diagram illustrating the effects of a fiber laser according to an exemplary embodiment.
Fig. 5 is a schematic diagram illustrating the effects of a fiber laser according to another exemplary embodiment.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar parts in the drawings, and thus, a repetitive description thereof will be omitted.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, devices, steps, and so forth. In other instances, well-known methods, devices, implementations or operations have not been shown or described in detail to avoid obscuring aspects of the invention.
The block diagrams shown in the figures are functional entities only and do not necessarily correspond to physically separate entities. I.e. these functional entities may be implemented in the form of software, or in one or more hardware modules or integrated circuits, or in different networks and/or processor means and/or microcontroller means.
The flow charts shown in the drawings are merely illustrative and do not necessarily include all of the contents and operations/steps, nor do they necessarily have to be performed in the order described. For example, some operations/steps may be decomposed, and some operations/steps may be combined or partially combined, so that the actual execution sequence may be changed according to the actual situation.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various components, these components should not be limited by these terms. These terms are used to distinguish one element from another. Thus, a first component discussed below may be termed a second component without departing from the teachings of the disclosed concept. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
It will be appreciated by those skilled in the art that the drawings are merely schematic representations of exemplary embodiments, and that the blocks or flow charts in the drawings are not necessarily required to practice the present invention and are, therefore, not intended to limit the scope of the present invention.
FIG. 1 is a flow chart of a method of making a saturable absorber. Fig. 2 is a schematic diagram of a process for making a saturable absorber. Fig. 1 and 2 schematically illustrate a method of making the saturable absorber of the present application.
As shown In fig. 1, In S102, a bulk indium diselenide (In) is added2Se3) Placing the mixture in an organic solvent. The organic solvent includes: n-cyclohexyl pyrrolidone solvent. Said In2Se3The concentration in the N-cyclohexylpyrrolidone solvent was 2 mg/ml. Can be, for example, bulk In2Se3The material was placed in a beaker containing N-cyclohexylpyrrolidone solvent (NMP).
In S104, an organic solvent containing indium diselenide is placed in an ultrasonic machine to obtain a suspension. May be, for example, filled with In as described above2Se3Placing the beaker in an ultrasonic machine with the power of 400W together with N-cyclohexylpyrrolidone solvent (NMP), and carrying out constant temperature ultrasonic treatment for 8 hours.
In S106, the suspension is centrifuged, and the centrifuged supernatant liquid is extracted. Centrifuging the uniform suspension obtained after constant temperature treatment for 8 hours at 5000rpm, and extracting supernatant of the centrifugate to remove un-peeled In2Se3And (3) a block body.
And in S108, dropping the upper layer liquid on the quartz plate and drying to obtain the indium diselenide two-dimensional nano quartz plate. Uniformly mixing In2Se3Dropping NMP solution of two-dimensional nano-sheets on quartz sheets, and putting the quartz sheets into a baking furnace at 60 ℃ for 4 hours. And after all the solvents are evaporated, obtaining the indium diselenide two-dimensional nano quartz plate.
In S110, the indium diselenide two-dimensional nano quartz plate is polished to obtain a saturable absorber. Can be, for example, dried In2Se3The two-dimensional nanosheet quartz plate is subjected to a D-shape testing method with polished end faces to obtain a saturable absorber which can be used as a saturable absorber for stable and operable mode locking.
According to the method for preparing the saturable absorber, the saturable absorber can be prepared in a cheap mode, and the method for preparing the saturable absorber is suitable for preparing the saturable absorber on a large scale.
It should be clearly understood that the present disclosure describes how to make and use particular examples, but the principles of the present disclosure are not limited to any details of these examples. Rather, these principles can be applied to many other embodiments based on the teachings of the present disclosure.
Those skilled in the art will appreciate that all or part of the steps implementing the above embodiments are implemented as computer programs executed by a CPU. The computer program, when executed by the CPU, performs the functions defined by the method provided by the present invention. The program may be stored in a computer readable storage medium, which may be a read-only memory, a magnetic or optical disk, or the like.
Furthermore, it should be noted that the above-mentioned figures are only schematic illustrations of the processes involved in the method according to exemplary embodiments of the invention, and are not intended to be limiting. It will be readily understood that the processes shown in the above figures are not intended to indicate or limit the chronological order of the processes. In addition, it is also readily understood that these processes may be performed synchronously or asynchronously, e.g., in multiple modules.
The application provides a saturable absorber, which is characterized in that the saturable absorber is a two-dimensional indium diselenide nanosheet. The saturable absorber is a saturable absorber prepared by the method described above. The method comprises the following steps: putting bulk indium diselenide in an organic solvent; placing an organic solvent containing indium diselenide in an ultrasonic machine to obtain a suspension; centrifuging the suspension, and extracting centrifuged supernatant liquid; dropping the upper layer liquid on a quartz plate and drying to obtain a two-dimensional nano-quartz plate of indium diselenide; and polishing the indium diselenide two-dimensional nano quartz plate to obtain the saturable absorber.
Fig. 3 is a schematic diagram of a fiber laser shown in accordance with an exemplary embodiment. Fig. 3 illustrates an exemplary fiber laser fabricated using saturable absorption in the present application.
The present application provides a fiber laser, including: an annular laser cavity; the ring laser cavity comprises: a saturable absorber (1), the saturable absorber (1) being In prepared by the preparation method as described above2Se3The optical fiber saturable absorber comprises an optical fiber saturable absorber with polished two-dimensional nanosheet end faces, 976nm wavelength pump source laser (2) with adjustable pulse width, a wavelength division multiplexer (3) for 1064nm or 1550nm wavelength, ytterbium-doped or erbium-doped optical fiber (4), an isolator (5) for 1060nm or 1550nm wavelength, a deflection controller (6) for 1060nm or 1550nm wavelength, a 10% output coupler (7) and an optical fiber filter (8).
The wavelength pump source laser (2) can be operated in a pulse form, and the pulse width can be adjusted from continuous to 10ns by adjusting the pulse width and the duty ratio. The wavelength pump source laser (2) is in a pulse or continuous modeEnergy and proper pulse width time are provided In the optical fiber cavity, and the In can be successfully excited by exciting light In 1064nm or 1550nm cavity excited by pulse pumping2Se3The two-dimensional nanosheet saturable absorber reaches a saturated state, so that ultrafast laser with adjustable repetition frequency is output.
The wavelength division multiplexer (3) is in a single mode fiber type for 1064nm or 1550nm wavelength. The wavelength division multiplexer (3) connects the optical fiber (4) and the output coupler (7) by an optical fiber fusion method.
The optical fiber (4) is ytterbium-doped or erbium-doped optical fiber. The optical fiber (4) is used to connect the wavelength division multiplexer (3) and the isolator (5) by the optical fiber fusion method.
The isolator (5) is used for 1060nm or 1550nm wavelength, and the isolator (5) uses a single mode optical fiber as a basic main body. The isolator has an optical fiber (4) by optical fiber fusion method, and the other is connected to a deflection controller (6).
The polarization controller (6) is used for 1064nm or 1550nm wavelength, and the polarization controller (6) uses a single-mode optical fiber as a basic main body. The basic function of the device is used for controlling the polarization direction of 1064nm or 1550nm excitation light passing through the saturable absorber (1) so as to reduce the linear absorption of the saturable absorber (1) to the 1064nm or 1550nm excitation light to the maximum extent and improve the stability and the damage threshold of the saturable absorber (1).
The output coupler (7) is a 10% output coupler, and the coupler (7) uses a single mode fiber as a basic body.
The optical fiber filter (8) is a tail weave filter, and the optical fiber filter (8) takes a single mode optical fiber as a basic main body.
Fig. 4 and 5 are schematic diagrams illustrating effects of a fiber laser according to an exemplary embodiment.
In according to the invention2Se3In used In two-dimensional nanosheet saturable absorber2Se3The size and the thickness of the two-dimensional nanosheet are respectively 200nm and 5 nm. Referring to FIGS. 4 and 5, the obtained In2Se3The two-dimensional nanosheet has stable mode-locking pulse sequence and single pulse output signal under the wavelength of 1064nm and 1550nm, and the time intervals between the two pulses are respectively70.9ns or 136.8ns is matched with the cavity length time of the round-trip of the laser, and the mode locking is proved to be effective, and the pulse width of the output single pulse is 252ps and 1.543x215fs respectively.
The fiber laser according to the invention uses a 976nm pump source laser of adjustable pulse width or continuous light for In-mounted2Se3Ytterbium-doped or bait-doped optical fiber laser cavity of two-dimensional nanosheet saturable absorber provides pulse energy with adjustable pulse width for exciting 1064nm or 1550nm laser and In2Se3The two-dimensional nanosheet saturates the absorber to achieve the mode locking phenomenon with adjustable repetition frequency.
Exemplary embodiments of the present invention are specifically illustrated and described above. It is to be understood that the invention is not limited to the precise construction, arrangements, or instrumentalities described herein; on the contrary, the invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
In addition, the structures, the proportions, the sizes, and the like shown in the drawings of the present specification are only used for matching with the contents disclosed in the specification, so as to be understood and read by those skilled in the art, and are not used for limiting the limit conditions which the present disclosure can implement, so that the present disclosure has no technical essence, and any modification of the structures, the change of the proportion relation, or the adjustment of the sizes, should still fall within the scope which the technical contents disclosed in the present disclosure can cover without affecting the technical effects which the present disclosure can produce and the purposes which can be achieved. In addition, the terms "above", "first", "second" and "a" as used in the present specification are for the sake of clarity only, and are not intended to limit the scope of the present disclosure, and changes or modifications of the relative relationship may be made without substantial technical changes and modifications.

Claims (8)

1. A method for preparing a saturable absorber, comprising:
putting bulk indium diselenide in an organic solvent;
placing an organic solvent containing indium diselenide in an ultrasonic machine to obtain a suspension;
centrifuging the suspension, and extracting centrifuged supernatant liquid;
dropping the upper layer liquid on a quartz plate and drying to obtain a two-dimensional nano-quartz plate of indium diselenide; and
polishing the indium diselenide two-dimensional nano quartz plate to obtain a saturable absorber;
the organic solvent comprises an N-cyclohexylpyrrolidone solvent;
the concentration of the indium diselenide in the N-cyclohexyl pyrrolidone solvent is 2 mg/ml.
2. The method of claim 1, wherein polishing the diindium selenide two-dimensional nano quartz wafer to obtain a saturable absorber comprises:
and processing the indium diselenide two-dimensional nano quartz plate in an end face polishing mode to obtain the saturable absorber.
3. A saturable absorber characterized in that,
the saturable absorber is the saturable absorber prepared by the method of claim 1 or 2.
4. A fiber laser, comprising:
an annular laser cavity;
the ring laser cavity comprises:
a saturable absorber prepared by the method of claim 1 or 2, wherein the size and thickness of the indium diselenide two-dimensional nanosheet adopted by the saturable absorber are respectively 200nm and 5 nm;
wavelength pump source laser;
a wavelength division multiplexer;
an optical fiber;
an isolator;
a deflection controller;
an output coupler;
an optical fiber filter.
5. The fiber laser of claim 4, wherein the wavelength pump source laser comprises:
976nm pump source laser with adjustable pulse width; and
a continuous 976nm pump source laser.
6. The fiber laser of claim 4, wherein the wavelength division multiplexer comprises:
wavelength division multiplexer at 1060nm wavelength; and
the 1550nm wavelength is used with a wavelength division multiplexer.
7. The fiber laser of claim 4, wherein the fiber comprises:
an ytterbium-doped optical fiber; and
an erbium doped fiber.
8. The fiber laser of claim 4, wherein the isolator, the polarization controller, the output coupler, and the fiber filter are all substantially single mode fibers.
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