CN106898940A - A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber - Google Patents
A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber Download PDFInfo
- Publication number
- CN106898940A CN106898940A CN201710316703.9A CN201710316703A CN106898940A CN 106898940 A CN106898940 A CN 106898940A CN 201710316703 A CN201710316703 A CN 201710316703A CN 106898940 A CN106898940 A CN 106898940A
- Authority
- CN
- China
- Prior art keywords
- hetero
- junctions
- laser
- absorbing mirror
- saturable absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention is applied to laser technology field, there is provided a kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber.The hetero-junctions saturable absorbing mirror includes substrate, covers golden membranous layer on the substrate and the atomic level two-dimensional material film being covered on the golden membranous layer；The atomic level two-dimensional material film includes the slow saturable absorber hetero-junction thin-film of atomic level two-dimensional material, isolated material and the fast saturable absorber hetero-junction thin-film of atomic level two-dimensional material that set gradually.The hetero-junctions saturable absorbing mirror that the present invention is provided, alternately it is superimposed using different tow -dimensions atom grading materials, form the two-dimensional material hetero-junctions saturable absorbing mirror of atomic level, this new saturable absorbing mirror can combine two-dimensional layer material excellent specific property in itself, realize the regulation and control to saturable absorber nonlinear characteristic.
Description
Technical field
The invention belongs to laser technology field, more particularly to a kind of hetero-junctions saturable absorbing mirror and preparation method thereof, arteries and veins
Wash fibre laser off.
Background technology
It is a kind of effective way that optical fiber laser realizes ultrafast pulse output using passive mode-locking technology, and passive mode-locking
Key technology be to need to have saturable absorption effect in resonant cavity of fibre-optical laser.At present, researcher has utilized many
Plant saturable absorption effect and the output of passive mode-locking ultrafast pulse is obtained in optical fiber laser.In general, in order to overcome optical fiber
The unstable shortcoming of laser mode locking environment, researcher generally realizes optical fiber using semiconductor saturable absorbing mirror (SESAM)
Mode-locking For Lasers ultrafast pulse is exported.
However, because commercial SESAM is expensive, complex manufacturing technology, saturable absorption narrow bandwidth, normally only supporting skin
The pulse output of second rank, and damage threshold is relatively low, so not being suitable for the ultrafast optical fiber laser of comprehensive research yet
Dynamics.Therefore, with low cost, process is simple, high performance saturable absorber always ultrafast laser thing are developed
The target that reason field is pursued.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of hetero-junctions saturable absorbing mirror and preparation method thereof,
Pulse optical fiber, to solve commercial SESAM used in the prior art expensive, complex manufacturing technology, reliability
Low defect.
The present invention is achieved in that a kind of hetero-junctions saturable absorbing mirror, and the hetero-junctions saturable absorbing mirror includes
Substrate, covering golden membranous layer on the substrate and the atomic level two-dimensional material film being covered on the golden membranous layer；
The atomic level two-dimensional material film includes the slow saturable absorber of atomic level two-dimensional material for setting gradually
Hetero-junction thin-film, isolated material and the fast saturable absorber hetero-junction thin-film of atomic level two-dimensional material.
Further, the atomic level two-dimensional material hetero-junctions saturable absorbing mirror also includes packaging protection layer, described
Packaging protection layer is covered on the atomic level two-dimensional material film；The packaging protection layer is hexagonal boron nitride.
Further, the thickness of the golden membranous layer is 30-300nm.
Further, the slow saturable absorber hetero-junction thin-film of the atomic level two-dimensional material includes molybdenum bisuphide, two
At least one in selenizing molybdenum, zirconium diselenide, curing zirconium, stannic disulfide, two stannic selenides.
Further, the fast saturable absorber hetero-junction thin-film of the atomic level two-dimensional material includes Graphene, two sulphur
In change tungsten, two tungsten selenides, two telluride tungsten, two telluride molybdenums, curing hafnium, two selenizing hafniums, two selenizing rheniums, rhenium disulfide and indium selenide
At least one.
Present invention also offers a kind of preparation method of hetero-junctions saturable absorbing mirror, comprise the following steps：
Substrate and gold target material are placed in vacuum chamber；
By the gold target material surface ionization with produce gold plasma, using magnetron sputtering deposition method by it is described gold
It is plasma-deposited to form golden membranous layer on the substrate；Make the golden membranous layer by controlling sedimentation time and/or depositing temperature
Reach required thickness；
Atomic level two-dimensional material is transferred to formation atomic level two-dimensional material film on the golden membranous layer, is obtained heterogeneous
Knot saturable absorbing mirror.
Further, the preparation method also includes：
The hetero-junctions saturable absorbing mirror is packaged using hexagonal boron nitride, obtains packaging protection layer.
Present invention also offers a kind of pulse optical fiber, the pulse optical fiber includes that what is be sequentially connected with partly leads
Body pump laser, optical WDM device, gain fibre, optical coupler, optoisolator, optical circulators and described above
Hetero-junctions saturable absorbing mirror, and the optical circulators are connected with the optical WDM device, form ring cavity structure；
Wherein, the optoisolator is used for the laser isolated after locked mode, only allows the laser after locked mode in the pulse optical fiber
Interior unidirectional output；
The pump light that the semiconductor pump laser is produced enters the increasing after being coupled through the optical WDM device
Beneficial optical fiber produce locked mode required for laser pulse and the laser pulse is amplified；
The optical coupler by amplification after the laser pulse part output to another part is defeated outside chamber
Go out to the optical circulators, into the optical circulators laser pulse be coupled after into the hetero-junctions saturable inhale
Receiving mirror carries out locked mode, and the laser pulse after locked mode is back to the optical WDM device through the optical circulators again, then
Pulse laser is exported by the optical coupler again after amplifying through the gain fibre locked mode.
Further, the pulse optical fiber also include Polarization Controller, its be located at the optoisolator with it is described
Between optical circulators, the polarization state for controlling the laser in the annular chamber.
Present invention also offers a kind of pulse optical fiber, the pulse optical fiber includes that what is be sequentially connected with partly leads
Body pump laser, optical WDM device, Bragg grating, gain fibre and hetero-junctions saturable absorption described above
Mirror；
The pump light that semiconductor pump laser is produced enters Bragg grating after being coupled through optical WDM device, through cloth
Gain fibre generation laser pulse is entered back into after the transmission of glug grating, hetero-junctions saturable absorbing mirror is carried out to the laser pulse
Locked mode, the laser pulse after locked mode is amplified along backtracking to gain fibre, and the laser pulse after amplification passes through Bradley again
Exported by optical WDM laser after the transmission of lattice grating.
Compared with prior art, beneficial effect is the present invention：Hetero-junctions saturable absorption provided in an embodiment of the present invention
Mirror, is alternately superimposed using different tow -dimensions atom grading materials, forms the two-dimensional material hetero-junctions saturable absorbing mirror of atomic level,
This new saturable absorbing mirror can combine two-dimensional layer material excellent specific property in itself, be realized to saturation using heterojunction structure
Absorbing material can the regulation and control with band gap；Meanwhile, specific two-dimensional material replaces overlaying structure can realize speed saturable absorption
Body is cascaded, and realizes the regulation and control to saturable absorber nonlinear characteristic (saturable modulation depth, saturation light intensity etc.).
Brief description of the drawings
Fig. 1 is the structural representation of the hetero-junctions saturable absorbing mirror that first embodiment of the invention is provided；
Fig. 2 is the structural representation of the pulse optical fiber that third embodiment of the invention is provided；
Fig. 3 is the structural representation of the pulse optical fiber that fourth embodiment of the invention is provided.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Referring to Fig. 1, first embodiment of the invention provides a kind of hetero-junctions saturable absorbing mirror 100, including substrate 101,
The golden membranous layer 102 being covered in substrate 101 and the atomic level two-dimensional material film being covered on golden membranous layer 102；
The atomic level two-dimensional material film includes the slow saturable absorber of atomic level two-dimensional material for setting gradually
Hetero-junction thin-film 103, isolated material 104 and the fast saturable absorber hetero-junction thin-film 105 of atomic level two-dimensional material.
In the hetero-junctions saturable absorbing mirror 100 that first embodiment of the invention is provided, the atomic level two-dimensional material is thin
Film refers to the two-dimensional material film that thickness is single atomic layer, is alternately superimposed by using different tow -dimensions atom grading materials, shape
Into the two-dimensional material hetero-junctions saturable absorbing mirror of atomic level, this new saturable absorbing mirror can combine two-dimensional layer material
The excellent specific property of itself, the regulation and control to saturated absorption materials band band gap are realized using heterojunction structure；Meanwhile, specific two dimension
Material replaces overlaying structure can realize that speed saturable absorber is cascaded, and realization (can to saturable absorber nonlinear characteristic
Saturation modulation depth, saturation light intensity etc.) regulation and control.
Specifically, substrate 101 is silicon or carborundum.Isolated material 104 is single or multiple lift hexagonal boron nitride.Hexagonal is nitrogenized
Boron is the semi-conducting material of broad-band gap, and it is heterogeneous to be placed in the slow saturable absorber of atomic level two-dimensional material as isolated material
Between knot film and the fast saturable absorber hetero-junction thin-film of atomic level two-dimensional material, it is to avoid two kinds of materials influence each other.
Specifically, atomic level two-dimensional material hetero-junctions saturable absorbing mirror 100 also includes packaging protection layer 106, encapsulation
Protective layer 106 is covered on the atomic level two-dimensional material film；Packaging protection layer 106 is hexagonal boron nitride.Packaging protection
The effect of layer 106 is that the outermost layer of hetero-junctions saturable absorbing mirror 100 is packaged using the hexagonal boron nitride of atomic layer, is made
Hetero-junctions saturable absorbing mirror 100 and air insulated, so as to avoid it by the dioxygen oxidation in air.
Specifically, the thickness of the golden membranous layer is 30-300nm.
Specifically, the atomic level two-dimensional material film includes Graphene and transient metal sulfide.The transition gold
Category sulfide includes tungsten disulfide, two tungsten selenides, molybdenum bisuphide, two selenizing molybdenums, two telluride tungsten, two telluride molybdenums, curing hafnium, two
At least one in selenizing hafnium, zirconium diselenide, curing zirconium, two selenizing rheniums, rhenium disulfide, stannic disulfide and two stannic selenides.
Specifically, the slow saturable absorber hetero-junction thin-film of the atomic level two-dimensional material includes the atomic level two
The slow saturable absorber hetero-junction thin-film of dimension material includes molybdenum bisuphide, two selenizing molybdenums, zirconium diselenide, curing zirconium, curing
At least one in tin, two stannic selenides.The fast saturable absorber hetero-junction thin-film of atomic level two-dimensional material includes graphite
Alkene, tungsten disulfide, two tungsten selenides, two telluride tungsten, two telluride molybdenums, curing hafnium, two selenizing hafniums, two selenizing rheniums, rhenium disulfide and
At least one in indium selenide.
Each composition structure material therefor of the hetero-junctions saturable absorbing mirror that first embodiment of the invention is provided is simple, cost
It is cheap, wide-band modulation can be carried out to light.
Second embodiment of the invention provides a kind of preparation side of atomic level two-dimensional material hetero-junctions saturable absorbing mirror
Method, comprises the following steps：
S1：Substrate and gold target material are placed in vacuum chamber；
S2：By the gold target material surface ionization to produce golden plasma, will be described using magnetron sputtering deposition method
The plasma-deposited of gold forms golden membranous layer on the substrate；Make the gold by controlling sedimentation time and/or depositing temperature
Film layer reaches required thickness；
S3：Atomic level two-dimensional material is transferred to formation atomic level two-dimensional material film on the golden membranous layer, is obtained
Hetero-junctions saturable absorbing mirror.
The preparation method of the hetero-junctions saturable absorbing mirror (saturable absorber) that second embodiment of the invention is provided, first will
Gold target material and substrate are placed in vacuum chamber, and plasma will be formed after gold target material surface ionization using magnetron sputtering deposition method, and
Make described plasma-deposited onto substrate, formation golden film.In deposition process, by controlling sedimentation time and/or deposition temperature
The thickness of the golden film of degree control deposition；The two-dimensional material of individual layer (or multilayer) is transferred into described being coated with the substrate of golden film to make
It is standby to obtain " atomic level two-dimensional material hetero-junctions and speed saturable absorber are cascaded " saturable absorbing mirror.
Specifically, it is described that two-dimensional material is transferred on the golden membranous layer, mainly using organic high molecular polymer (such as
Polymethyl methacrylate, PMMA) carry out.The process of the transfer is as follows：1) chemical gaseous phase is used in sapphire/silicon base
Sedimentation prepares the two-dimensional material (including fast absorber and slow trapping body) of required atomic level；2) there is the indigo plant of material precious in growth
The PMMA that the substrate surfaces such as stone/silicon cover one layer of suitable thickness is placed into making PMMA film-formings in drying baker；3) surface is covered
The substrate for having PMMA films is placed in the NaOH solution of suitable concn, PMMA films and substrate is departed from (now the two of atom level
Dimension material has been transferred to PMMA surface)；4) the PMMA films that surface is covered with material are placed in and PMMA is dissolved in acetone soln；5) will
The two-dimensional material (including fast absorber and slow trapping body) of atomic layer is transferred to target substrate；6) original is used between speed absorber
Sub- level hexagonal boron nitride is isolated.
Specifically, the preparation method also includes
S4：The hetero-junctions saturable absorbing mirror is packaged using hexagonal boron nitride, obtains packaging protection layer.
Specifically, alternately shifted according to specific structure, saturable absorber is nitrogenized using the hexagonal of individual layer (or multilayer)
Boron is packaged.
Second embodiment of the invention prepares saturable absorber optical energy band by different two-dimensional material alternating structures
Regulatable " the atomic level two-dimensional material hetero-junctions and speed saturable absorber are cascaded " saturable absorbing mirror of band gap, so that real
Now to the modulation of visible ray to mid-infrared light.
Referring to Fig. 2, the embodiment of the present invention the 3rd provides a kind of pulse optical fiber, and pulse optical fiber 200 is wrapped
Include semiconductor pump laser 1, optical WDM device 2, gain fibre 3, the optical coupler 4, optoisolator being sequentially connected with
5th, optical circulators 7 and hetero-junctions saturable absorbing mirror 8 described above, and optical circulators 7 connect with optical WDM device 2
Connect, form ring cavity structure；Wherein, optoisolator 5 is used for the laser isolated after locked mode, only allows the laser after locked mode in pulse
Unidirectionally exported in optical fiber laser 200；
The pump light that semiconductor pump laser 1 is produced is produced after being coupled through optical WDM device 2 into gain fibre 3
Laser pulse required for locked mode is simultaneously amplified to the laser pulse；
Optical coupler 4 by amplification after the laser pulse part output to outside chamber and by another part export to
Optical circulators 7, into optical circulators 7 laser pulse be coupled after carry out locked mode into hetero-junctions saturable absorbing mirror 8,
Laser pulse after locked mode is back to optical WDM device 2 through optical circulators 7 again, then amplifies through the locked mode of gain fibre 3
Pulse laser is exported by optical coupler 4 again afterwards.
The pulse optical fiber 200 that third embodiment of the invention is provided includes that hetero-junctions saturable described above is inhaled
Receive mirror, the operation principle of this " atomic level two-dimensional material hetero-junctions and speed saturable absorber are cascaded " saturable absorbing mirror
It is, as a high reflection mirror of pulse optical fiber 200, when the laser in pulse optical fiber 200 is " former by this
When child level two-dimensional material hetero-junctions and the cascade of speed saturable absorber " saturable absorbing mirror reflects, laser can be by " atomic layer
Level two-dimensional material hetero-junctions and the cascade of speed saturable absorber " saturable absorbing mirror modulation.Specifically, atomic level two dimension material
The fast bulk heterojunction that absorbs of material is mainly used in realizing optical fiber laser self-starting and pulse compression, atomic level two-dimensional material slow trapping
Bulk heterojunction is mainly used in suppressing the noise in chamber, improves the pulse stability in fiber laser cavity.This " atomic level two
Dimension material hetero-junctions and the cascade of speed saturable absorber " saturable absorbing mirror has reliability high, and modulation capability is strong, and environment is simultaneous
Capacitive is high, has a wide range of application, with low cost, the advantages of can carry out wide-band modulation to light, while as the speculum of light, can be used for
The Primary Component that pulse laser is produced in laser system.
In the pulse optical fiber 200 that third embodiment of the invention is provided, optical WDM device 2 is by semiconductor pump
The coupling pump light that Pu laser 1 is produced enters gain fibre 3；Gain fibre 3 produce locked mode required for laser and to locked mode
Pulse is amplified；8 pairs of laser of hetero-junctions saturable absorbing mirror carry out locked mode, and the laser after locked mode is again through optical circulators
7 are back to optical WDM device 2, then export pulse laser by optical coupler 4 after the amplification of gain fibre 3.
Specifically, " the atomic level two is entered after optical circulators 7 are coupled the laser that gain fibre 3 is produced
The hetero-junctions saturable absorbing mirror 8 of dimension material hetero-junctions and the cascade of speed saturable absorber ", hetero-junctions saturable absorbing mirror 8
Locked mode is carried out to the laser and is reflected.By the reflection of hetero-junctions saturable absorbing mirror 8, the laser after locked mode is returned through original optical path
Return and be amplified by gain fibre 3；Amplified laser is exported by the optical coupler 4.
Specifically, the pulse optical fiber 200 also includes Polarization Controller 6, and Polarization Controller 6 is connected to optically isolated
Between device 5 and optical circulators 7；Polarization Controller 6 is used to control the polarization state of the laser in the annular chamber.
Referring to Fig. 3, fourth embodiment of the invention provides another pulse optical fiber 300, pulse optical fiber
300 include the semiconductor pump laser 11, optical WDM device 12, Bragg grating 13, the gain fibre 14 that are sequentially connected with
And hetero-junctions saturable absorbing mirror 15 described above；The pump light that semiconductor pump laser 11 is produced is through optical WDM
After device 12 enters Bragg grating 13 after coupling, enter back into gain fibre 14 and produce laser, hetero-junctions saturable absorbing mirror 15 pairs
The laser carries out locked mode, and the laser after locked mode exports pulse laser along backtracking through optical WDM laser 12.
Referring to Fig. 3, fourth embodiment of the invention provides another pulse optical fiber 300, pulse optical fiber
300 include the semiconductor pump laser 11, optical WDM device 12, Bragg grating 13, the gain fibre 14 that are sequentially connected with
And hetero-junctions saturable absorbing mirror 15 described above；
The pump light that semiconductor pump laser 300 is produced enters Bragg grating after being coupled through optical WDM device 12
13, gain fibre 14 is entered back into after being transmitted through Bragg grating 13 and produces laser pulse, 15 pairs of institutes of hetero-junctions saturable absorbing mirror
Stating laser pulse carries out locked mode, and the laser pulse after locked mode is amplified along backtracking to gain fibre 14, swashing after amplification
Light pulse is exported after Bragg grating 13 is transmitted by optical WDM laser 12 again.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in essence of the invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of hetero-junctions saturable absorbing mirror, it is characterised in that the hetero-junctions saturable absorbing mirror includes substrate, is covered in
Golden membranous layer in the substrate and the atomic level two-dimensional material film being covered on the golden membranous layer；
The atomic level two-dimensional material film includes that the slow saturable absorber of atomic level two-dimensional material for setting gradually is heterogeneous
Knot film, isolated material and the fast saturable absorber hetero-junction thin-film of atomic level two-dimensional material.
2. hetero-junctions saturable absorbing mirror as claimed in claim 1, it is characterised in that the atomic level two-dimensional material is heterogeneous
Knot saturable absorbing mirror also includes packaging protection layer, and the packaging protection layer is covered in the atomic level two-dimensional material film
On；The packaging protection layer is hexagonal boron nitride.
3. hetero-junctions saturable absorbing mirror as claimed in claim 1, it is characterised in that the thickness of the golden membranous layer is 30-
300nm。
4. hetero-junctions saturable absorbing mirror as claimed in claim 1, it is characterised in that the atomic level two-dimensional material slowly may be used
Saturated absorbing body hetero-junction thin-film includes molybdenum bisuphide, two selenizing molybdenums, zirconium diselenide, curing zirconium, stannic disulfide, two stannic selenides
In at least one.
5. hetero-junctions saturable absorbing mirror as claimed in claim 1, it is characterised in that the atomic level two-dimensional material soon may be used
Saturated absorbing body hetero-junction thin-film include Graphene, tungsten disulfide, two tungsten selenides, two telluride tungsten, two telluride molybdenums, curing hafnium,
At least one in two selenizing hafniums, two selenizing rheniums, rhenium disulfide and indium selenide.
6. a kind of preparation method of hetero-junctions saturable absorbing mirror, it is characterised in that comprise the following steps：
Substrate and gold target material are placed in vacuum chamber；
By the gold target material surface ionization with produce gold plasma, using magnetron sputtering deposition method by it is described gold grade from
Daughter deposition forms golden membranous layer on the substrate；The golden membranous layer is reached by controlling sedimentation time and/or depositing temperature
Required thickness；
Atomic level two-dimensional material is transferred to formation atomic level two-dimensional material film on the golden membranous layer, obtaining hetero-junctions can
Saturated absorption mirror.
7. the preparation method of hetero-junctions saturable absorbing mirror as claimed in claim 6, it is characterised in that the preparation method is also
Including：
The hetero-junctions saturable absorbing mirror is packaged using hexagonal boron nitride, obtains packaging protection layer.
8. a kind of pulse optical fiber, it is characterised in that the pulse optical fiber includes the semiconductor pump being sequentially connected with
Pu laser, optical WDM device, gain fibre, optical coupler, optoisolator, optical circulators and claim 1 to 5
Hetero-junctions saturable absorbing mirror described in any one, and the optical circulators are connected with the optical WDM device, shape
Circularize cavity configuration；Wherein, the optoisolator is used for the laser isolated after locked mode, only allows the laser after locked mode in the arteries and veins
Wash off in fibre laser and unidirectionally export；
The pump light that the semiconductor pump laser is produced enters the gain light after being coupled through the optical WDM device
Fibre produce locked mode required for laser pulse and the laser pulse is amplified；
The optical coupler by amplification after the laser pulse part output to outside chamber and by another part export to
The optical circulators, into the optical circulators laser pulse be coupled after enter the hetero-junctions saturable absorbing mirror
Locked mode is carried out, the laser pulse after locked mode is back to the optical WDM device through the optical circulators again, then through institute
State and pulse laser is exported by the optical coupler again after gain fibre locked mode amplifies.
9. pulse optical fiber as claimed in claim 8, it is characterised in that the pulse optical fiber also includes polarization
Controller, it is located between the optoisolator and the optical circulators, for controlling the inclined of the laser in the annular chamber
Shake state.
10. a kind of pulse optical fiber, it is characterised in that the pulse optical fiber includes the semiconductor pump being sequentially connected with
Hetero-junctions described in Pu laser, optical WDM device, Bragg grating, gain fibre and claim 1 to 5 any one
Saturable absorbing mirror；
The pump light that semiconductor pump laser is produced enters Bragg grating after being coupled through optical WDM device, through Prague
Gain fibre is entered back into after grating transmission produces laser pulse, hetero-junctions saturable absorbing mirror to lock the laser pulse
Mould, the laser pulse after locked mode is amplified along backtracking to gain fibre, and the laser pulse after amplification passes through Prague again
Exported by optical WDM laser after grating transmission.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710316703.9A CN106898940A (en) | 2017-05-08 | 2017-05-08 | A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710316703.9A CN106898940A (en) | 2017-05-08 | 2017-05-08 | A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106898940A true CN106898940A (en) | 2017-06-27 |
Family
ID=59197270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710316703.9A Pending CN106898940A (en) | 2017-05-08 | 2017-05-08 | A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106898940A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107317219A (en) * | 2017-07-07 | 2017-11-03 | 西北大学 | Dual wavelength pulse optical fiber laser based on rhenium disulfide saturable absorber |
| WO2018205087A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and pulse fiber laser |
| CN109193328A (en) * | 2018-09-25 | 2019-01-11 | 北京工业大学 | A kind of laser carrying out pulse choice |
| CN109818250A (en) * | 2019-02-19 | 2019-05-28 | 武汉安扬激光技术有限责任公司 | The all -fiber enclosed package structure and packaging method of semiconductor saturable absorbing mirror |
| CN109980495A (en) * | 2017-12-28 | 2019-07-05 | 香港理工大学 | Saturable absorption preparation, saturable absorber and optical fiber laser |
| CN112226744A (en) * | 2020-08-31 | 2021-01-15 | 西北大学 | ReS2-HfS2Preparation device and method of van der waals heterojunction film |
| CN112751256A (en) * | 2020-12-24 | 2021-05-04 | 广东工业大学 | Saturable absorber based on tungsten ditelluride/tungsten disulfide heterojunction, preparation method and mode-locked fiber laser manufactured by saturable absorber |
| WO2023277817A3 (en) * | 2021-07-02 | 2023-03-02 | National University Of Singapore | Heterostructures and electronic devices comprising heterostructures |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208738A (en) * | 2011-04-21 | 2011-10-05 | 北京工业大学 | Graphene passive mode-locked fiber laser |
| CN103493203A (en) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | Transistor device and materials for making the same |
| CN105372853A (en) * | 2015-12-15 | 2016-03-02 | 电子科技大学 | Micro-ring resonant cavity electro-optical modulator based on graphene/molybdenum disulfide heterojunction |
| CN105896258A (en) * | 2016-06-16 | 2016-08-24 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser |
| CN105896257A (en) * | 2016-06-02 | 2016-08-24 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and mode-locking fiber laser |
-
2017
- 2017-05-08 CN CN201710316703.9A patent/CN106898940A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103493203A (en) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | Transistor device and materials for making the same |
| CN102208738A (en) * | 2011-04-21 | 2011-10-05 | 北京工业大学 | Graphene passive mode-locked fiber laser |
| CN105372853A (en) * | 2015-12-15 | 2016-03-02 | 电子科技大学 | Micro-ring resonant cavity electro-optical modulator based on graphene/molybdenum disulfide heterojunction |
| CN105896257A (en) * | 2016-06-02 | 2016-08-24 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and mode-locking fiber laser |
| CN105896258A (en) * | 2016-06-16 | 2016-08-24 | 深圳大学 | Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205087A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Heterojunction saturable absorption mirror and preparation method therefor, and pulse fiber laser |
| CN107317219A (en) * | 2017-07-07 | 2017-11-03 | 西北大学 | Dual wavelength pulse optical fiber laser based on rhenium disulfide saturable absorber |
| CN107317219B (en) * | 2017-07-07 | 2019-12-24 | 西北大学 | Dual-wavelength pulse fiber laser based on rhenium disulfide saturable absorber |
| CN109980495A (en) * | 2017-12-28 | 2019-07-05 | 香港理工大学 | Saturable absorption preparation, saturable absorber and optical fiber laser |
| CN109193328A (en) * | 2018-09-25 | 2019-01-11 | 北京工业大学 | A kind of laser carrying out pulse choice |
| CN109818250A (en) * | 2019-02-19 | 2019-05-28 | 武汉安扬激光技术有限责任公司 | The all -fiber enclosed package structure and packaging method of semiconductor saturable absorbing mirror |
| CN112226744A (en) * | 2020-08-31 | 2021-01-15 | 西北大学 | ReS2-HfS2Preparation device and method of van der waals heterojunction film |
| CN112226744B (en) * | 2020-08-31 | 2021-07-16 | 西北大学 | ReS2-HfS2Preparation device and method of van der waals heterojunction film |
| CN112751256A (en) * | 2020-12-24 | 2021-05-04 | 广东工业大学 | Saturable absorber based on tungsten ditelluride/tungsten disulfide heterojunction, preparation method and mode-locked fiber laser manufactured by saturable absorber |
| CN112751256B (en) * | 2020-12-24 | 2021-12-10 | 广东工业大学 | Saturable absorber based on tungsten ditelluride/tungsten disulfide heterojunction, preparation method and mode-locked fiber laser manufactured by saturable absorber |
| WO2023277817A3 (en) * | 2021-07-02 | 2023-03-02 | National University Of Singapore | Heterostructures and electronic devices comprising heterostructures |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106898940A (en) | A kind of hetero-junctions saturable absorbing mirror and preparation method thereof, pulse optical fiber | |
| CN106911070A (en) | A kind of two-dimensional material hetero-junctions saturable absorbing mirror and preparation method thereof | |
| CN105896258A (en) | Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser | |
| US10897023B2 (en) | All quantum dot based optoelectronic device | |
| Seo et al. | Flexible phototransistors based on single‐crystalline silicon nanomembranes | |
| CN105866984B (en) | A kind of graphene electro-optical modulator and preparation method thereof | |
| CN104218443A (en) | Two-dimensional stratified material based practical saturable absorber and production method thereof | |
| CN105896257A (en) | Heterojunction saturable absorption mirror and preparation method therefor, and mode-locking fiber laser | |
| WO2018205086A1 (en) | Two-dimensional material heterojunction saturable absorption mirror and preparation method therefor | |
| CN205846435U (en) | Two-dimensional semiconductor saturable absorbing mirror, pulse optical fiber | |
| WO2017214925A1 (en) | Two-dimensional semiconductor saturable absorber mirror and preparation method therefor, and pulse optical fibre laser | |
| WO2016095858A1 (en) | Topological insulator saturable absorber mirror and fabricating method therefor | |
| CN107611215B (en) | Silicon/two-dimensional semiconductor heterojunction photoelectric detector and preparation method thereof | |
| Dixit et al. | Near infrared random lasing in multilayer MoS2 | |
| CN117539105B (en) | On-chip all-optical switch, preparation method of on-chip all-optical switch and optoelectronic device | |
| Pugliese et al. | Highly Reflective Periodic Nanostructure Based on Thermal Evaporated Tungsten Oxide and Calcium Fluoride for Advanced Photonic Applications | |
| CN108075354A (en) | Narrow linewidth laser | |
| CN204290028U (en) | Based on the practical saturable absorption device of two-dimensional layer material | |
| JP2018041957A (en) | Photoelectric conversion device and method of controlling operation wavelength of the same | |
| US20230105777A1 (en) | Mid-infrared semiconductor saturable absorber mirror based on inas/gasb superlattice and preparation method thereof | |
| JP7517738B2 (en) | Narrow Linewidth Laser | |
| CN109149333B (en) | Waveguide integrated optical modulator and preparation method thereof | |
| WO2018205087A1 (en) | Heterojunction saturable absorption mirror and preparation method therefor, and pulse fiber laser | |
| JPS59232477A (en) | Formation of dielectric multilayer film | |
| WO2020062214A1 (en) | Waveguide integrated optical modulator and preparation method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170627 |
|
| RJ01 | Rejection of invention patent application after publication |