CN109361142A - It is a kind of based on the saturable absorber device of TiN nano material and application - Google Patents
It is a kind of based on the saturable absorber device of TiN nano material and application Download PDFInfo
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- CN109361142A CN109361142A CN201811039568.9A CN201811039568A CN109361142A CN 109361142 A CN109361142 A CN 109361142A CN 201811039568 A CN201811039568 A CN 201811039568A CN 109361142 A CN109361142 A CN 109361142A
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- saturable absorber
- nano material
- absorber device
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- tin nano
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
Abstract
The invention discloses a kind of based on the saturable absorber device of TiN nano material and application.TiN nano material is evenly coated in reflecting mirror or micro-nano fiber surface constitutes saturable absorber device, and reflecting mirror is golden mirror or silver mirror, and micro-nano fiber is tapered fiber or D-shaped optical fiber；Or be dispersed in residuite and form complex thin film composition saturable absorber device, residuite is organic polymer.Present invention finds a kind of completely new material systems with excellent saturable absorption characteristic, new selection is provided to develop novel saturable absorber, TiN nano material can be prepared using the methods of chemical method, magnetron sputtering, pulsed laser deposition on a large scale, inexpensively, the present invention have the advantages that it is cheap, be suitble to large scale preparation, be small in size, constituting a plurality of types of mode-locking devices, greatly reduce cost compared to current commercialized semiconductor saturable absorbing mirror technology.
Description
Technical field
The present invention relates to nonlinear optical materials and device, more particularly to a kind of saturable based on TiN nano material
Absorber devices and application.
Background technique
Pulse laser is just playing increasingly important role in the fields such as laser manufacturing industry, scientific research.With
Adjust Q and mode-locking technique and laser gain medium continuous development, can be obtained from the laser system of many different wave lengths
Pulse output.Generating pulse mainly has actively and passively two ways, and actively modulation needs the outer plus modulator in laser cavity
(acousto-optic/electrooptic modulator) is realized, is both increased system cost, is also reduced system portable；And passive modulation is without any
External devices, thus it is increasingly becoming current mainstream selection and developing direction.Major part commercialization pulse laser is all at present
It is realized using passive mode, two kinds of passive modulation modes of most common of them are tune Q and mode-locking technique, key are intracavitary
Saturable absorber is added, plays the role of amplitude automodulation, i.e., when input light intensity is bigger, the absorption of saturable absorber
It is smaller, be conducive to that continuous wave is inhibited to realize pulse output.
Saturable absorber common at present includes dyestuff, semiconductor saturated absorption mirror and carbon nanometer emerging recently
Pipe and graphene etc..
Dyestuff saturable absorber can only generate the pulse of nanosecond order since the self-recovery time is in nanosecond order, and
And its stability is also a larger disadvantage；
Semiconductor saturated absorption mirror passes through the development of many decades, and technology relative maturity, output is stablized, but its light injury
Threshold value is low, application band is narrow, recovery time is long (about a few nanoseconds), and structure is complicated, and preparation condition requires harshness, with high costs, and
And can only be applied in specific linear topology chamber, it greatly limits it and further develops.
Single-walled carbon nanotube has excellent saturated absorption response near infrared band, but itself is a kind of anisotropy
Material, the direction of growth, diameter, length, chirality etc. are difficult to select and control when preparation, and the light of single-walled carbon nanotube is inhaled
The factors such as receipts characteristic and carbon pipe diameter, chirality are related, therefore will bring problem to the accurate control of mode locking；And single wall carbon
Nanotube is easy entanglement bunchy, brings higher linear impairments.
The two-dimensional materials such as graphene are used as saturable absorber to be pursued by researcher in recent years, and basic ideas are
The graphene film of monatomic thickness is dispersed in transparent polymer or is transferred directly to optical fiber head section as saturable absorption
Body.But the characteristic of graphene saturable absorber depends on the unique dirac band structure of monatomic thick graphene, with
The increase of the atom number of plies, the change of properties such as carrier mobility sharply declines, band structure and optical absorption characteristics are larger, make more
Atomic layer graphene application is restricted.Currently, cheap, the efficient preparation of monoatomic layer graphene is still at present urgently to solve
Problem certainly.
Summary of the invention
In order to solve problem present in background technique, the present invention provides a kind of saturables based on TiN nano material
Absorber devices and application, the device have the characteristics that structure is simple, at low cost, can be used for the mode locking of laser, adjust Q, laser
Beam shaping etc..
Technical scheme is as follows:
TiN nano material Direct Uniform is coated on reflecting mirror or micro-nano fiber surface and constitutes saturable absorption by the present invention
Body device；Or TiN nano material is dispersed in residuite and forms complex thin film composition saturable absorber device.
Currently preferred reflecting mirror is golden mirror or silver mirror.
Currently preferred micro-nano fiber is tapered fiber or D-shaped optical fiber.
Currently preferred residuite is organic polymer, and the organic polymer is polyvinyl alcohol or poly- methyl
Methyl acrylate.
The present invention is applied to the fields such as pulse laser.
This hair TiN nano material is a kind of new material system with saturable absorption characteristic, can be used for making
Standby saturable absorber.
The beneficial effects of the present invention are:
(1) present invention used in TiN nano material can on a large scale, inexpensively use chemical method, magnetron sputtering, laser
The preparation of the methods of pulsed deposition greatly reduces cost compared to current commercialized SESAM technology.
(2) present invention has found a kind of completely new material system with excellent saturable absorption characteristic, novel to develop
Saturable absorber provides new material selection.
Detailed description of the invention
Fig. 1 is the corresponding saturable absorber Z scanning curve figure based on TiN nano material of embodiment 1.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples.
Specific embodiments of the present invention are as follows:
Embodiment 1
The present embodiment illustrates how to prepare satisfying for the nano material being dispersed in polymer polyethylene alcohol (PVA)
And absorber.
1) it takes 0.1g TiN nano powder dispersion in 20mL deionized water, stirs 3h, be completely dissolved powder, obtain
TiN nano material aqueous solution.
2) 0.3g PVA powder is dispersed in 20mL deionized water, stirs 3h, is completely dissolved powder, obtains PVA water
Solution.
3) 5mL PVA aqueous solution and 5mL TiN nano material aqueous solution are uniformly mixed, it is smooth pours into surface
In surface plate, and the horizontal TiN/PVA film for being put in drying in drying box and obtaining smooth drying for two days.
4) femtosecond laser (120fs, 1030nm, 1kHz) is utilized, by aperture Z scanning technique research saturable absorption spy
Property, the PVA film of blank is referred to as a comparison, and result is as shown in Figure 1, that TiN/PVA can be observed according to experimental result is thin
Film have apparent saturable absorption characteristic, better than the saturable absorption characteristic of the PVA film of blank, TiN/PVA film can
Saturated absorption excellent.
Embodiment 2
The present embodiment illustrates the saturable absorber for how preparing and being coated directly on reflecting mirror (golden reflecting mirror).
1) it takes the TiN nano powder dispersion of 0.4g in 15mL deionized water, stirs 3h, it is water-soluble to obtain uniform TiN
Liquid.
2) 1mL TiN aqueous solution is taken, in golden mirror surface, rear room temperature is dried to obtain 500 revs/min of spin coatings (20 seconds)
Saturable absorber device can be used for constructing pulse laser.
Embodiment 3
The present embodiment illustrates how to prepare the saturable absorber coated in micro-nano fiber (tapered fiber) surface.
1) it takes the TiN nano powder dispersion of 0.1g in 15mL deionized water, stirs 3h, it is water-soluble to obtain uniform TiN
Liquid.
2) take the water-soluble drop of 50mL TiN on the surface on tapered fiber surface, while light passing in optical fiber, TiN nano particle
It is adsorbed on tapered fiber surface and constitutes saturable absorber, can be used for constructing pulse laser.
Above-mentioned specific embodiment is used to illustrate the present invention, rather than limits the invention, in essence of the invention
In mind and scope of protection of the claims, to any modifications and changes that the present invention makes, protection model of the invention is both fallen within
It encloses.
Claims (6)
1. a kind of saturable absorber device based on TiN nano material, it is characterised in that: TiN nano material is evenly coated in instead
It penetrates mirror or micro-nano fiber surface constitutes saturable absorber device；Or TiN nano material is dispersed in residuite and is formed again
Compound film constitutes saturable absorber device.
2. a kind of saturable absorber device based on TiN nano material according to claim 1, it is characterised in that: institute
The reflecting mirror stated is golden mirror or silver mirror.
3. a kind of saturable absorber device based on TiN nano material according to claim 1, it is characterised in that: institute
The micro-nano fiber stated is tapered fiber or D-shaped optical fiber.
4. a kind of saturable absorber device based on TiN nano material according to claim 1, it is characterised in that: institute
The residuite stated is organic polymer.
5. a kind of saturable absorber device based on TiN nano material according to claim 1, it is characterised in that: institute
The organic polymer stated is polyvinyl alcohol or polymethyl methacrylate.
6. a kind of application of the saturable absorber device based on TiN nano material, it is characterised in that: the saturable absorption
Body device is applied to the fields such as pulse laser.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811039568.9A CN109361142A (en) | 2018-09-06 | 2018-09-06 | It is a kind of based on the saturable absorber device of TiN nano material and application |
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| CN201811039568.9A CN109361142A (en) | 2018-09-06 | 2018-09-06 | It is a kind of based on the saturable absorber device of TiN nano material and application |
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| CN109361142A true CN109361142A (en) | 2019-02-19 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109818246A (en) * | 2019-04-10 | 2019-05-28 | 中国科学院国家天文台长春人造卫星观测站 | A kind of refrigeration mode saturable absorber device |
| CN111342333A (en) * | 2020-03-24 | 2020-06-26 | 深圳市达则科技有限责任公司 | Optical fiber mode locking device based on polymer and preparation method and application thereof |
| CN114268013A (en) * | 2021-12-23 | 2022-04-01 | 深圳大学 | Saturable absorber manufacturing method, saturable absorber and laser |
| CN114300924A (en) * | 2022-01-05 | 2022-04-08 | 广东工业大学 | Preparation method of quantum dot saturable absorber film and application of quantum dot saturable absorber film in pulse fiber laser |
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| CN103247935A (en) * | 2013-04-19 | 2013-08-14 | 王枫秋 | Optical anisotropy saturable absorption device, manufacturing method and pulse laser based on device |
| CN104158079A (en) * | 2013-10-10 | 2014-11-19 | 中国科学院上海光学精密机械研究所 | Saturable absorber device based on MoS2 or MoSe2 two-dimensional nanosheet |
| CN107809053A (en) * | 2017-10-19 | 2018-03-16 | 浙江大学 | The saturable absorber device and method based on TCO for fiber pulse laser |
| US20180138655A1 (en) * | 2015-08-28 | 2018-05-17 | International Business Machines Corporation | Wafer scale monolithic integration of lasers, modulators, and other optical components using ald optical coatings |
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| CN103247935A (en) * | 2013-04-19 | 2013-08-14 | 王枫秋 | Optical anisotropy saturable absorption device, manufacturing method and pulse laser based on device |
| CN104158079A (en) * | 2013-10-10 | 2014-11-19 | 中国科学院上海光学精密机械研究所 | Saturable absorber device based on MoS2 or MoSe2 two-dimensional nanosheet |
| US20180138655A1 (en) * | 2015-08-28 | 2018-05-17 | International Business Machines Corporation | Wafer scale monolithic integration of lasers, modulators, and other optical components using ald optical coatings |
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Non-Patent Citations (1)
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| S. DIVYA, ET AL.: "origin of optical non-linear response in TiN owing to excitation dynamics of surface plasmon resonance electronic oscillations", 《LASER PHYSICS LETTERS》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109818246A (en) * | 2019-04-10 | 2019-05-28 | 中国科学院国家天文台长春人造卫星观测站 | A kind of refrigeration mode saturable absorber device |
| CN109818246B (en) * | 2019-04-10 | 2020-03-13 | 中国科学院国家天文台长春人造卫星观测站 | Refrigeration type saturable absorber device |
| CN111342333A (en) * | 2020-03-24 | 2020-06-26 | 深圳市达则科技有限责任公司 | Optical fiber mode locking device based on polymer and preparation method and application thereof |
| CN114268013A (en) * | 2021-12-23 | 2022-04-01 | 深圳大学 | Saturable absorber manufacturing method, saturable absorber and laser |
| CN114300924A (en) * | 2022-01-05 | 2022-04-08 | 广东工业大学 | Preparation method of quantum dot saturable absorber film and application of quantum dot saturable absorber film in pulse fiber laser |
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Application publication date: 20190219 |