CN113113289A - Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping - Google Patents
Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping Download PDFInfo
- Publication number
- CN113113289A CN113113289A CN202110347486.6A CN202110347486A CN113113289A CN 113113289 A CN113113289 A CN 113113289A CN 202110347486 A CN202110347486 A CN 202110347486A CN 113113289 A CN113113289 A CN 113113289A
- Authority
- CN
- China
- Prior art keywords
- shaping
- femtosecond laser
- near field
- field
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention relates to a method for preparing a silicon controlled nanowire by a femtosecond laser with a far/near field collaborative shaping function, and belongs to the technical field of femtosecond laser application. According to the method, a gold film is evaporated on the surface of a silicon wafer in a <100> crystal direction by an electron beam, a single-layer transparent dielectric microsphere mask is self-assembled on the surface of a gold-plated silicon wafer by a dripping coating method, femtosecond laser is focused on a single-layer microsphere mask area which is closely arranged by adopting an objective lens, a local optical field with the radial size lower than the optical diffraction limit is formed at the bottom of a microsphere due to the Mie scattering effect of dielectric microspheres on incident femtosecond laser, and the gold film is ablated by using the local enhanced optical field to obtain the nanopore array. The diameter, morphology and distribution of the hole array are simultaneously adjusted by varying the time-domain distribution and the spatial distribution of the incident laser energy, the polarization type, the wavelength and the pulse energy. And then placing the processed sample in hydrofluoric acid and hydrogen peroxide etchant for metal-assisted chemical etching to obtain the silicon nanowire array with controllable position, diameter, shape and distribution.
Description
Technical Field
The invention relates to a method for preparing a silicon controlled nanowire array by using a far/near field cooperative shaping femtosecond laser, in particular to a method for preparing a silicon controlled nanowire array by combining far/near field cooperative shaping femtosecond laser processing with metal-assisted chemical etching, and belongs to the technical field of femtosecond laser application.
Background
The silicon nanowire array has the advantages that the radial size reaches the visible light wavelength range, the effects of waveguide, Mie scattering, diffraction, near field coupling and the like are shown in the interaction with light, and the absorption, scattering and reflection characteristics of the light can be adjusted by changing the structure of the silicon nanowire, so that the silicon nanowire array has application prospects in the fields of photovoltaics, photocatalysis, photoelectric sensing and the like; in addition, the nano-silica gel has the structural characteristics of high length-diameter ratio and periodic arrangement, and has application value in the biological fields of biological cell transfection, surface enhanced Raman sensing and the like.
The metal-assisted chemical etching technology is used as one of the methods for preparing the silicon nanowire array, and has the advantages of simple preparation steps, low cost and high efficiency. The nanowire structure with high length-diameter ratio can be prepared by changing the concentration ratio of the etching agent and improving the etching time; and etching the pattern provided with the noble metal mask layer to obtain nanowires with different cross sections. And thus has more flexibility compared to gas-liquid-solid growth methods and reactive ion etching methods.
The microsphere-assisted femtosecond laser near-field processing utilizes the Mie scattering effect of the transparent microsphere on incident laser to form a local enhanced optical field breaking through the optical diffraction limit at the bottom of the microsphere. Meanwhile, the femtosecond laser has extremely short pulse width and extremely high instantaneous power, and has small heat affected zone and high processing precision. Therefore, the adoption of femtosecond laser to irradiate the transparent microspheres can realize the super-diffraction limit processing on the substrate material at the bottoms of the microspheres.
The preparation of the silicon nanowire array by the metal-assisted chemical etching technology firstly needs to prepare a noble metal hole array mask, and the current preparation method mainly comprises a laser interference lithography method, a microsphere mask pattern replication method and an anodic aluminum oxide mask method. Although the methods can prepare large-area uniform noble metal hole arrays, the methods have poor control flexibility on hole diameter, hole array position and distribution, and are difficult to be suitable for preparing miniaturized and high-integration devices such as microfluidic chips. Therefore, the invention provides a method for preparing the silicon controlled nanowire array with position, shape and distribution by combining the remote/near field cooperative shaping femtosecond laser processing and metal-assisted chemical etching.
Disclosure of Invention
The invention aims to provide a method for preparing a silicon controlled nanowire array by using a femtosecond laser with a far/near field synergistic shaping function, which can prepare a silicon nanowire array with controllable position, diameter, appearance and distribution. According to the method, a gold film is evaporated on the surface of a silicon wafer in a <100> crystal direction by an electron beam, a single-layer polystyrene microsphere mask is self-assembled on the surface of a gold-plated silicon wafer by a dripping coating method, femtosecond laser is focused on a single-layer microsphere mask area which is closely arranged by adopting an objective lens, and a local optical field with the radial dimension lower than the optical diffraction limit is formed at the bottom of a microsphere due to the Mie scattering effect of polystyrene microspheres on incident femtosecond laser, so that the gold film is ablated to obtain the nanopore array. The diameter, morphology and distribution of the hole array are simultaneously adjusted by varying the time-domain distribution and the spatial distribution of the incident laser energy, the polarization type, the wavelength and the pulse energy. And then placing the processed sample in hydrofluoric acid and hydrogen peroxide etchant for metal-assisted chemical etching to obtain the silicon nanowire array with controllable position, diameter, shape and distribution.
The purpose of the invention is realized by the following technical scheme:
a method for preparing a silicon controlled nanowire by a femtosecond laser with far/near field cooperative shaping comprises the following steps:
step one, evaporating a gold film with nanometer thickness on the surface of a single polished silicon wafer with a crystal orientation of <100> by an electron beam evaporation method;
preparing a compact single-layer polystyrene microsphere mask on the surface of the gold-plated silicon by adopting a drop coating method;
and step three, processing the nano gold film in a near field by adopting a space-time frequency offset collaborative shaping method, and controlling the diameter, the morphology and the distribution of the nano hole array. The method specifically comprises (1) time domain shaping, namely modulating a femtosecond laser single pulse into a femtosecond laser pulse string, setting pulse intervals and a pulse energy ratio, and controlling the electron temperature/lattice temperature of a gold film based on the absorption of an electronic system in the material to the photon energy of the incident laser pulse string to realize the control of the diameter of a nanopore; (2) space shaping, namely modulating the original femtosecond laser Gaussian pulse into any light field intensity distribution based on a space light field shaping technology so as to realize space distribution control of the cash nanopore array; (3) frequency domain shaping, according to the Mie scattering theory, the microsphere near-field shaping local optical field is related to the wavelength of incident laser, the microsphere radius and the microsphere refractive index, and the local enhanced optical field characteristic can be adjusted by changing the incident laser wavelength; (4) and (4) polarization shaping, wherein the local light field shaped by the femtosecond laser near field has polarization dependence according to FDTD solutions software simulation, so that the roundness of the processed hole is controlled by adjusting the linear/circular polarization of the optical near field. The step is based on the cooperative shaping of the far/near field, and the diameter, the appearance and the distribution of the processing hole are adjusted.
And step four, placing the processed sample in a mixed solution of hydrofluoric acid and hydrogen peroxide for metal catalytic etching, and controlling the etching time and the etching temperature so as to adjust the length of the silicon nanowire.
Has the advantages that:
1. the invention discloses a method for preparing silicon controlled nanowires by using a far/near field cooperative shaping femtosecond laser, and provides a method combining microsphere-assisted femtosecond laser near field processing and metal-assisted chemical etching, wherein a nanopore array with a diameter exceeding the diffraction limit of incident light is processed by utilizing the Mie scattering effect of microspheres, and the diameter of a nanopore can be flexibly adjusted by changing laser energy;
2. the invention discloses a method for preparing a silicon controlled nanowire array by using a far/near field cooperative shaping femtosecond laser, which is characterized in that a space-time frequency offset cooperative shaping femtosecond laser processing system based on electronic dynamic regulation is used for microsphere-assisted near field processing to simultaneously control the diameter, the cross section shape and the spatial distribution of a silicon nanowire array. The combination of the pulse time shaper, the space shaper, the frequency doubling crystal and the quarter wave plate is adopted to realize the simultaneous adjustment of the space-time distribution, the laser wavelength and the polarization type of the femtosecond laser, and the near-field shaping effects of the microspheres on incident lasers with different polarization types and different wavelengths are different (see the simulated light fields of figures 4 and 5). The cross-section and spatial distribution of the nanowires can be adjusted.
Drawings
FIG. 1 is a flow chart of a method for preparing a silicon controlled nanowire array by combining femtosecond laser near-field processing and metal-assisted chemical etching according to the invention;
FIG. 2 is a schematic diagram of a femtosecond laser processing optical path for collaborative shaping of spatial-temporal frequency offset according to an embodiment of the present invention;
reference numerals:
the system comprises a 1-femtosecond laser, a 2-electric control shutter, a 3-pulse time shaper, a 4-beam splitter, a 5-spatial light modulator, a 6-plano-convex mirror, a 7-plano-convex mirror, an 8-ultrafast reflector, a 9-half wave plate, a 10-Glan Taylor prism, an 11-frequency doubling crystal (BBO), a 12-optical filter, a 13-quarter wave plate, a 14-dichroic mirror, a 15-quintupling objective (NA is 0.15), a 16-drop coating sample, a 17-six-axis translation stage, an 18-illumination light source, a 19-plano-convex mirror, a 20-plano-convex mirror, a 21-charge coupling device and a 22-computer control system.
FIG. 3 is a diagram of a spatial shaping phase diagram, a simulation diagram of the intensity distribution of a corresponding annular light field, and a diagram of a single-layer polystyrene microsphere mask and an optical mirror for the processing result of an annular light beam according to an embodiment of the present invention.
FIG. 4 is a light intensity simulation diagram of the 5nm position below the surface of the gold film after the linear polarization and the circular polarization are calculated by FDTD Solutions software and shaped by the microsphere near field, and an atomic mechanics microscope diagram of the linear polarization and the circular polarization processing results in the embodiment of the present invention.
FIG. 5 is a graph showing the Mie scattered optical field distribution of polystyrene microspheres for fundamental 800nm and frequency-doubled 400nm lasers calculated by FDTD Solutions software in the embodiments of the present invention.
Detailed Description
The invention is described in detail below with reference to the accompanying drawings and examples.
Example 1
A method for preparing a silicon controlled nanowire array by combining far/near field cooperative shaping femtosecond laser processing with metal-assisted chemical etching comprises the following implementation steps of:
step one, evaporating a gold film on the surface of a single polished silicon wafer with a crystal orientation of <100> by an electron beam evaporation method;
preparing a compact single-layer polystyrene microsphere mask on the surface of the gold-plated silicon by adopting a drop coating method;
and step three, constructing a femtosecond laser processing light path, processing the nano gold film in a near field by adopting a space-time frequency offset cooperative shaping method, and controlling the diameter, the shape and the distribution of the nano hole array. The method specifically comprises (1) time domain shaping, namely modulating a femtosecond laser single pulse into a femtosecond laser pulse train, setting pulse intervals and pulse energy ratio, and controlling the electron temperature/lattice temperature of a gold film based on the photon energy absorption of an electronic subsystem in the material to incident laser to realize the control of the diameter of a nanopore; (2) space shaping, namely modulating the original femtosecond laser Gaussian pulse into any light field intensity distribution based on a space light field shaping technology so as to realize space distribution control of the cash nanopore array; (3) frequency domain shaping, according to the mie scattering theory, the microsphere near-field shaping local optical field is related to the wavelength lambda of the incident laser, the microsphere radius R and the microsphere refractive index n, and can be described by a size parameter q: and q is 2 pi Rn/lambda, (4) polarization shaping, and the local light field shaped by the femtosecond laser near field has polarization dependence according to FDTD solutions software simulation, so that the roundness of the processed hole is controlled by adjusting the linear/circular polarization of the optical near field. And adjusting the diameter, the morphology and the distribution of the processing holes based on the cooperative shaping of the far and near fields.
And step four, placing the processed sample in a mixed solution of hydrofluoric acid and hydrogen peroxide for metal catalytic etching, and controlling the etching time and the etching temperature so as to adjust the length of the silicon nanowire.
Example 2
A method for preparing a silicon controlled nanowire array by combining far/near field cooperative shaping femtosecond laser processing and metal-assisted chemical etching specifically comprises the steps of preparing a single-layer polystyrene microsphere mask on a gold-plated silicon surface by using a dripping method as shown in figure 3, and then setting up a space-time frequency offset cooperative shaping femtosecond laser processing light path based on electronic dynamic regulation and control as shown in figure 2 to carry out femtosecond laser processing on a dripping sample. The method comprises the steps of building a space-time frequency offset shaping femtosecond laser processing light path, setting a femtosecond laser 1 to a Single shot triggering mode to emit Gaussian distributed Single pulse, sequentially passing through an electric control shutter 2 and a pulse time shaper 3, splitting a beam of sub-pulse to a spatial light modulator 5 by a beam splitter 4, reflecting the shaped beam back to the beam splitter 4, then entering a 4F system formed by a pair of plano- convex mirrors 6 and 7 with the same focal length, then reflecting the beam by an ultrafast mirror 8 and a dichroic mirror 14, and focusing the beam on the surface of a sample by a 5-time objective 15. The computer control system cooperatively controls the triggering of a single pulse of the femtosecond laser 1, the opening and closing of the electric control shutter 2, the pulse train design of the pulse time shaper 3, the phase input of the spatial light modulator 5, the movement of the six-axis translation stage 17 and the PC-end imaging of the charge coupled device 21. The half-wave plate 9 and the Glan Taylor prism 10 are combined to continuously adjust the laser energy; a quarter wave plate is used to convert the linear polarization into circular polarization. A BBO frequency doubling crystal 11 and an optical filter 12 are adopted to shape 800nm femtosecond laser into 400 nm. To eliminate diffraction caused by the propagation of the beam in air, a 4F system is used to carry the SLM-shaped optical field to the entrance surface of the objective lens 15. In addition, the illumination light source 18, the plano-convex mirrors 19,20, and the charge coupled device 21 constitute a process imaging system. And (3) placing the processed sample in a mixed solution of hydrogen peroxide and hydrofluoric acid for metal catalytic etching.
The parameters of the femtosecond laser (Spitfire Ace-35F, Spectra Physics) used in the experimental process were as follows: the center wavelength is 800nm, the pulse width is 35fs, and the trigger mode is single-point trigger (single shot). The resolution of the adopted spatial light modulator (Pluto-NIR, Holoeye) is 1920 x 1080 pixels, and the pixel pitch is 8 um.
The specific implementation steps are as follows:
(1) evaporating a 3nm titanium connecting layer and a 20nm gold film on the surface of a single polished silicon wafer with the N type, the <100> crystal orientation and the resistivity of 1-10 omega cm by an electron beam evaporation method;
(2) 1uL of polystyrene microsphere dispersion (diameter 1um, 2.5 wt%) is dropped on 1X 1cm by using a liquid-transfering gun2And (3) plating the surface of the silicon wafer, then dropwise adding 2uL of absolute ethyl alcohol to enable the dispersion to diffuse and cover the surface of the sample, and placing the sample for 20min by inclining the sample at 30 degrees. The dispersion liquid flows directionally under the action of gravity, the ethanol is volatilized continuously, and the polystyrene microspheres self-organize to form a densely arranged single-layer mask under the action of surface capillary force;
(3) the computer control system 22, the femtosecond laser 1 and the illumination light source 18 are turned on. Opening the electric control shutter 2, enabling the femtosecond laser to sequentially pass through each optical element to be focused on the surface of the sample, and adjusting the processing light path to enable the laser incidence direction to be vertical to the processed sample;
(4) based on a computer control system focus searching program, the focal position of the objective lens 15 is found, and then the positions of the plano- convex mirrors 19 and 20 are adjusted to enable the sample surface at the PC end to be imaged clearly.
(5) The spatial light modulator 5 is opened, the phase diagram is input to the SLM in the computer control system 22, the traditional linear polarized gaussian beam is shaped into a beam with annular field intensity distribution after passing through the SLM, and the simulated light field is as shown in fig. 3;
(6) because the vertical incidence laser obtains the optical field with the radial dimension smaller than the optical diffraction limit under the Mie scattering effect of the polystyrene microsphere mask, the optical field at the bottom of the microsphere is simulated by FDTD as shown in the figure. Based on a laser energy adjusting assembly consisting of a half-wave plate 9 and a Glan Taylor prism 10, rotating the half-wave plate 9 to adjust the incident laser power, focusing and processing a dripping sample 16 through a 5-time objective lens 15, and continuously adjusting the diameter of a hole array; the horizontal movement of the six-axis translation stage 17 is controlled by the computer control system 22 to perform the machining at the designated position on the sample surface. And the linearly polarized laser is converted into circular polarization after passing through the quarter-wave plate to adjust the roundness of the hole array. In addition, the diameter of the nanopore is adjusted by converting the wavelength of 800nm into 400nm by adopting a frequency doubling crystal, and the near-field shaping optical field under two wavelengths is shown as a simulated figure 5.
(7) And (3) ultrasonically cleaning the processed sample by using absolute ethyl alcohol and deionized water respectively for 10min in sequence, and then drying by using nitrogen.
(8) Preparing 4.6mol/L HF and 0.44mol/L H in a plastic beaker by taking 30 mass percent of hydrogen peroxide, 40 mass percent of hydrofluoric acid solution and deionized water2O2And mixing the solution, soaking the processed sample in the solution, and placing the solution in a fume hood at room temperature for metal catalytic etching.
The above detailed description is further intended to illustrate the objects, aspects and advantages of the present invention, and it should be understood that the above description is only exemplary of the present invention and is not intended to limit the scope of the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (2)
1. A method for preparing a silicon controlled nanowire by a femtosecond laser with remote/near field collaborative shaping is characterized in that: the method comprises the following steps:
step one, evaporating a gold film with nanometer thickness on the surface of a single polished silicon wafer;
secondly, preparing a compact transparent dielectric microsphere mask on the surface of the gold-plated silicon;
thirdly, processing the nano gold film in a near field by adopting a space-time frequency offset collaborative shaping method, and controlling the diameter, the morphology and the distribution of the nano hole array;
and step four, placing the processed sample in a mixed solution of hydrofluoric acid and hydrogen peroxide for metal-assisted chemical etching, and controlling the etching time and the etching temperature so as to adjust the length of the silicon nanowire.
2. The method for preparing the silicon controlled nanowire by the femtosecond laser with the remote/near field cooperative shaping as claimed in claim 1, wherein: the concrete implementation manner of the third step is as follows:
(1) time domain shaping, namely modulating the femtosecond laser single pulse into a femtosecond laser pulse train, setting pulse interval and pulse energy ratio, and controlling the electron temperature/lattice temperature of the gold film based on the absorption of an electronic system in the material to the photon energy of the incident laser pulse train, thereby realizing the control of the diameter of the nanopore;
(2) space shaping, namely modulating the original femtosecond laser Gaussian pulse into any light field intensity distribution based on a space light field shaping technology so as to realize space distribution control of the cash nanopore array;
(3) and (3) frequency domain shaping, namely according to the Mie scattering theory, the microsphere near-field shaping local optical field is related to the wavelength of incident laser, the microsphere radius and the microsphere refractive index. The processing morphology is controlled by changing the incident laser wavelength to adjust the local enhancement near field characteristic;
(4) polarization shaping, namely simulating that a femtosecond laser near field shaping local optical field has polarization dependence according to FDTD solutions software, so as to adjust linear/circular polarization of an optical near field to control the roundness of a machined hole; the step is based on the cooperative shaping of the far/near field, and the diameter, the appearance and the distribution of the processing hole are adjusted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110347486.6A CN113113289A (en) | 2021-03-31 | 2021-03-31 | Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110347486.6A CN113113289A (en) | 2021-03-31 | 2021-03-31 | Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113113289A true CN113113289A (en) | 2021-07-13 |
Family
ID=76713167
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110347486.6A Pending CN113113289A (en) | 2021-03-31 | 2021-03-31 | Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113113289A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114289859A (en) * | 2022-02-28 | 2022-04-08 | 北京理工大学 | Hemispherical resonance gyroscope base electrode shaping method of space-time frequency shaping femtosecond laser |
| CN116310719A (en) * | 2023-02-10 | 2023-06-23 | 中国人民解放军军事科学院国防科技创新研究院 | Time-frequency domain-based optical diffraction complex model training method and image processing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130183833A1 (en) * | 2010-09-21 | 2013-07-18 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Laser micro/nano processing system and method |
| CN103706955A (en) * | 2013-12-19 | 2014-04-09 | 北京理工大学 | Method for preparing high depth-diameter-ratio three-dimensional micro-channel through electronic dynamic control |
| CN107199403A (en) * | 2017-05-18 | 2017-09-26 | 长春理工大学 | One kind utilizes TiO2The method of the super diffraction limit processing of array of particles auxiliary femtosecond laser |
| CN108568594A (en) * | 2018-03-22 | 2018-09-25 | 北京工业大学 | Regulate and control the method for crystal silicon external waviness structure based on class plasmonic lenses effect |
| CN111992878A (en) * | 2020-09-14 | 2020-11-27 | 华中科技大学 | Device and method for reducing time required by femtosecond laser introduction structure |
-
2021
- 2021-03-31 CN CN202110347486.6A patent/CN113113289A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130183833A1 (en) * | 2010-09-21 | 2013-07-18 | Technical Institute of Physics and Chemistry of the Chinese Academy of Sciences | Laser micro/nano processing system and method |
| CN103706955A (en) * | 2013-12-19 | 2014-04-09 | 北京理工大学 | Method for preparing high depth-diameter-ratio three-dimensional micro-channel through electronic dynamic control |
| CN107199403A (en) * | 2017-05-18 | 2017-09-26 | 长春理工大学 | One kind utilizes TiO2The method of the super diffraction limit processing of array of particles auxiliary femtosecond laser |
| CN108568594A (en) * | 2018-03-22 | 2018-09-25 | 北京工业大学 | Regulate and control the method for crystal silicon external waviness structure based on class plasmonic lenses effect |
| CN111992878A (en) * | 2020-09-14 | 2020-11-27 | 华中科技大学 | Device and method for reducing time required by femtosecond laser introduction structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114289859A (en) * | 2022-02-28 | 2022-04-08 | 北京理工大学 | Hemispherical resonance gyroscope base electrode shaping method of space-time frequency shaping femtosecond laser |
| CN116310719A (en) * | 2023-02-10 | 2023-06-23 | 中国人民解放军军事科学院国防科技创新研究院 | Time-frequency domain-based optical diffraction complex model training method and image processing method |
| CN116310719B (en) * | 2023-02-10 | 2024-04-19 | 中国人民解放军军事科学院国防科技创新研究院 | Time-frequency domain-based optical diffraction complex model training method and image processing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103862171B (en) | Dual wavelength femtosecond laser prepares the method for two-dimension periodic metallic particles array structure | |
| Xu et al. | Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography | |
| CN105108342B (en) | Method for preparing two-dimensional metallic photonic crystal structure in large area through femtosecond laser direct writing | |
| CN102285635B (en) | System and method for manufacturing metal micro-nano structure by using laser | |
| CN109434289B (en) | Femtosecond laser manufacturing method for tunable phase-change nano-structure super surface | |
| CN113113289A (en) | Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping | |
| CN106216833B (en) | Method based on dynamic control laser machine semiconductor twin-stage surface texture | |
| CN106735925B (en) | A kind of femtosecond laser direct write preparation method of two dimension sub-micron butterfly metal micro structure | |
| Chen et al. | Broad-band ultra-low-reflectivity multiscale micro–nano structures by the combination of femtosecond laser ablation and in situ deposition | |
| CN104028777B (en) | The method of surface enhanced Raman substrate is prepared based on femtosecond laser dynamic control | |
| CN104439699A (en) | System and method for preparing micro-nano array structure by laser | |
| CN109848565A (en) | Femtosecond laser nanoprocessing method and system based on plasmon nanostructure auxiliary | |
| CN107790887A (en) | The femtosecond laser direct write preparation method of two-dimentional rhombus cycle micro-nano metal structure | |
| CN108213718B (en) | A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method | |
| CN111060999A (en) | Method for preparing high-density grating by femtosecond laser weak ablation small-included-angle interference | |
| US20160298875A1 (en) | Surface structure for solar heat absorbers and method for the production thereof | |
| CN107132210A (en) | A kind of substrate manufacture method of the surface-enhanced Raman based on dynamic control | |
| CN109483058B (en) | Method for preparing super-hydrophobic anti-reflection structure on irregular metal curved surface | |
| Pan et al. | Fabrication of two-dimensional periodic structures on silicon after scanning irradiation with femtosecond laser multi-beams | |
| Li et al. | Deepening of nanograting structures on Si by a two-step laser spatial-selective amorphization strategy combined with chemical etching | |
| Chen et al. | An anti-reflective 1D rectangle grating on GaAs solar cell using one-step femtosecond laser fabrication | |
| Ding et al. | Broadband optical absorption copper surface fabricated by femtosecond laser for sensitivity enhancement of thermoelectric photodetector | |
| Ning et al. | Femtosecond laser-induced anisotropic structure and nonlinear optical response of yttria-stabilized zirconia single crystals with different planes | |
| CN100376354C (en) | Method and system for making multiple period microstructure in photosensitive material by laser | |
| CN113253368B (en) | Broadband film high absorber, preparation method and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210713 |