CN111992878A - Device and method for reducing time required by femtosecond laser introduction structure - Google Patents
Device and method for reducing time required by femtosecond laser introduction structure Download PDFInfo
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- CN111992878A CN111992878A CN202010962160.XA CN202010962160A CN111992878A CN 111992878 A CN111992878 A CN 111992878A CN 202010962160 A CN202010962160 A CN 202010962160A CN 111992878 A CN111992878 A CN 111992878A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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Abstract
The invention discloses a device and a method for reducing the time required by a femtosecond laser introducing structure, and belongs to the field of laser processing. The method comprises the following steps: generating a first femtosecond laser pulse, a second femtosecond laser pulse, … … and an Nth femtosecond laser pulse, wherein N is an integer greater than or equal to 2; modulating the delay time of the N femtosecond laser pulses to enable the time of the next femtosecond laser pulse of the two adjacent femtosecond laser pulses in the N femtosecond laser pulses to reach the corresponding reflector to lag the time of the previous femtosecond laser pulse; reflecting the first femtosecond laser pulse and the delayed N-1 femtosecond laser pulses into an objective lens; and focusing the N femtosecond laser pulses reflected into the objective lens to a processing area inside the processing material to form the anisotropic structure. Compared with the common pulse train, the femtosecond laser processing time required by the generation of the nano grating structure is shortened from microsecond nanosecond level to picosecond level, and the application of optical storage and the like with high requirements on speed can be met.
Description
Technical Field
The invention belongs to the field of laser processing, and particularly relates to a device and a method for reducing time required by a femtosecond laser introduced structure.
Background
In recent years, the application of femtosecond laser in the field of micro-nano processing is greatly developed, and more interests of people are stimulated. The femtosecond laser has extremely high instantaneous power density due to the characteristics of ultrafast and super-strong property, and can realize nonlinear effects such as multiphoton absorption or multiphoton polymerization and the like in the transparent material after being focused by the objective lens, so that various modification changes occur in the material. When the femtosecond laser interacts with materials such as fused quartz, nano-pore glass, aerogel glass, doped glass and the like, different modification changes can be realized in the medium according to different pulse energies. When the pulse energy is low, the refractive index of the processing region increases, and the processing region can be used for manufacturing an optical waveguide. When the energy is high, the processing area can generate small holes or cracks, and the method can be used for three-dimensional optical storage technology. When the pulse energy is in a middle range, a periodic nano-grating structure can be induced in a processing area, the period of the periodic nano-grating structure is usually smaller than the wavelength of laser light, the arrangement direction is related to the polarization state of the laser light, the periodic nano-grating structure has the birefringence characteristic, the structural damage threshold is high, and the periodic nano-grating structure can be used for manufacturing polarization optical elements and multidimensional optical storage technology.
The femtosecond laser with proper parameters is selected to continuously irradiate the interior of the fused quartz to generate the nano grating. However, because of the incubation process in the formation process of the nano-grating, several, tens or even hundreds of laser pulses are needed for generating the nano-grating structure, due to the limitation of the manufacturing process of the femtosecond laser, the repetition frequency of the femtosecond laser which can generate anisotropic structures such as the nano-grating is usually at the highest in the megahertz level, the time interval between adjacent pulses of a single beam femtosecond pulse train is at the nanosecond level, the processing time for processing the single-point nano-grating structure is above the nanosecond level or even the microsecond level, the data writing speed is greatly limited when the nano-grating structure is applied to optical storage and other applications, and the method is one of the difficulties which are urgently needed to be solved in the applications such as the multidimensional optical. Therefore, there is a need for improvements in the prior art to reduce the time required to write structures by reducing the number of pulses and by modifying the processing apparatus.
Disclosure of Invention
In view of the above defects or improvement requirements of the prior art, the present invention provides an apparatus and a method for reducing the time required for introducing a femtosecond laser into a structure, which aims to solve the problem of long processing time of the femtosecond laser required for generating the existing nano-grating, and break through the limitation of writing speed in applications such as multi-dimensional optical storage.
To achieve the above object, according to one aspect of the present invention, there is provided an apparatus for reducing a time required for femtosecond laser to be introduced into a structure, comprising: the device comprises a femtosecond laser, N reflectors, N-1 time delay units and an objective lens; wherein N is an integer greater than or equal to 2;
the femtosecond laser is used for generating N beams of femtosecond laser beams, and each beam of femtosecond laser beam comprises a femtosecond laser pulse;
the N-1 delay units comprise:
the delay unit is used for modulating the delay time of the (i + 1) th femtosecond laser pulse, wherein i is 1, … … and N-1;
the time for the latter femtosecond laser pulse to reach the corresponding reflector in two adjacent femtosecond laser pulses lags behind the former femtosecond laser pulse;
the N mirrors include:
a first mirror for reflecting the first femtosecond laser pulse into the objective lens;
a jth reflector for transmitting the first j-1 femtosecond laser pulses and reflecting the delayed jth femtosecond laser pulse to an objective lens, wherein j is 2, … …, N;
the objective lens is used for focusing N femtosecond laser pulses to a processing area in a processing material to form an anisotropic structure; the time for which N femtosecond laser pulses are focused into the processing material is equivalent to the time for which a beam of femtosecond pulse laser string in the picosecond order is focused into the processing material.
Further, the time for the next femtosecond laser pulse of two adjacent femtosecond laser pulses in the N femtosecond laser pulses to reach the corresponding reflector is within hundreds of femtoseconds behind the number of the previous femtosecond laser pulses.
Further, the anisotropic structure single-point processing time does not exceed several picoseconds.
Further, the processing material is fused silica.
Further, the anisotropic structure is a nano-grating structure.
According to another aspect of the present invention, there is provided a method of reducing the time required for a femtosecond laser to be introduced into a structure, comprising:
s1, generating a first femtosecond laser pulse, a second femtosecond laser pulse, … … and an Nth femtosecond laser pulse, wherein N is an integer greater than or equal to 2;
s2, modulating the delay time of the N femtosecond laser pulses to enable the time of the next femtosecond laser pulse of the two adjacent femtosecond laser pulses in the N femtosecond laser pulses to reach the corresponding reflector to lag the time of the previous femtosecond laser pulse;
s3, reflecting the first femtosecond laser pulse and the delayed N-1 femtosecond laser pulses to an objective lens;
s4, focusing the N femtosecond laser pulses reflected into the objective lens to a processing area inside a processing material to form an anisotropic structure; the time for which N femtosecond laser pulses are focused into the processing material is equivalent to the time for which a beam of femtosecond pulse laser string in the picosecond order is focused into the processing material.
Further, the time for the next femtosecond laser pulse of two adjacent femtosecond laser pulses in the N femtosecond laser pulses to reach the corresponding reflector is within hundreds of femtoseconds behind the number of the previous femtosecond laser pulses.
Further, the anisotropic structure single-point processing time does not exceed several picoseconds.
Further, the processing material is fused silica.
Further, the anisotropic structure is a nano-grating structure.
In general, compared with the prior art, the above technical solution contemplated by the present invention can achieve the following beneficial effects:
(1) the invention adopts N femtosecond laser pulses with time delay for processing, the time for the next femtosecond laser pulse of two adjacent femtosecond laser pulses to reach a corresponding reflector in the N femtosecond laser pulses is within hundreds of femtoseconds of the previous femtosecond laser pulse, and the smaller time interval between the pulses ensures that the subsequent pulse and the previous pulse interact with a processing material to generate nano plasma for interaction, thereby playing the role of accelerating the generation of an anisotropic structure, effectively reducing the pulse quantity required by the generation of a nano grating structure, reducing the femtosecond laser processing time required by the generation of the nano grating structure to picosecond magnitude and ensuring that the requirement of high-speed data writing in the multidimensional optical storage processing can be met.
(2) During the process of converting the nano plasma from a spherical shape to an ellipsoid shape or a nano plane, the processing area can also present a certain anisotropy, and can also present a birefringence characteristic. The invention is also effective when the structure without the nano grating is required to be processed (such as anisotropic nano holes), so the invention has wide application range and strong practicability.
Drawings
FIG. 1 is a schematic diagram of an apparatus for reducing the time required for introducing a femtosecond laser into a structure according to an embodiment of the present invention;
fig. 2 is a schematic time-domain shape diagram of a pulse train focused into a processing material in a method for reducing the time required for introducing a femtosecond laser into a structure provided by the embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Studies have shown that nanograting requires a hatching process to be performed. Due to the existence of some inherent defects in fused silica, when the femtosecond laser is applied to the processing area, the defects have lower ionization threshold, and some randomly distributed nano plasmons are generated in the processing area. Under the irradiation of subsequent laser pulses, the nano plasmons can be expanded continuously, and the expansion process shows obvious anisotropy according to the polarization state of the laser, so that the ellipsoidal nano plasmons are formed. The ellipsoidal plasma has an enhancement effect on an optical field, a positive feedback process is formed, and the growth of the plasma is further accelerated until the shape of a nano plane is evolved. The planes are firstly randomly distributed in a focus area, the density of electron plasmas in the nano plane is increased along with the accumulation of incident pulses, so that the excitation material has a metal-like phase and is coherent with an incident light field, the plasmas are subjected to periodic modulation, and finally the randomly distributed nano plane forms a nano grating structure.
Because the generation of the nano plasma plays an important role in the formation of the nano grating, the interaction between the subsequent pulse and the nano plasma is expected to accelerate the formation of the nano grating. In order to accelerate this process, as shown in fig. 1, the present invention proposes an apparatus for reducing the time required for femtosecond laser introduction into a structure, comprising: the device comprises a femtosecond laser, N reflectors, N-1 time delay units and an objective lens; wherein N is an integer greater than or equal to 2;
the femtosecond laser is used for generating N beams of femtosecond laser beams, and each beam of femtosecond laser beam comprises a femtosecond laser pulse;
the N-1 delay units comprise:
the delay unit is used for modulating the delay time of the (i + 1) th femtosecond laser pulse, wherein i is 1, … … and N-1;
the time for the latter femtosecond laser pulse to reach the corresponding reflector in two adjacent femtosecond laser pulses lags behind the former femtosecond laser pulse;
the N mirrors include:
a first mirror for reflecting the first femtosecond laser pulse into the objective lens;
a jth reflector for transmitting the first j-1 femtosecond laser pulses and reflecting the delayed jth femtosecond laser pulse to an objective lens, wherein j is 2, … …, N;
the objective lens is used for focusing N femtosecond laser pulses to a processing area in a processing material to form an anisotropic structure; the time for which N femtosecond laser pulses are focused into the processing material is equivalent to the time for which a beam of femtosecond pulse laser string in the picosecond order is focused into the processing material.
The time domain shape of the femtosecond laser pulse train is shown in fig. 2.
Research shows that the service life of the nano plasma is about hundreds of femtoseconds, so that the relative delay of each component of two laser pulses is controlled within the service life of the nano plasma, the next femtosecond laser pulse component is within hundreds of femtoseconds of the last femtosecond laser pulse component, the interaction between the next femtosecond laser pulse component and the nano plasma is strongest, the process of converting the nano plasma from a sphere to a nano plane is accelerated, and finally, the time of focusing the femtosecond laser pulses into the processing material is only a few picoseconds at most, so that the purpose of reducing the processing time of the anisotropic structure in the processing material is achieved.
The processing material in the embodiment of the present invention is fused silica, but the present invention is not limited thereto, and other materials capable of forming a similar anisotropic structure, such as germania glass, sapphire, nanoporous glass, aerogel glass, doped glass, etc., may be substituted in practical applications.
The optical path device provided in the embodiment of the present invention is a multi-optical path device, but the present invention is not limited thereto, and other optical paths may be used instead in practical applications, for example, the optical path device combined with a birefringent crystal delay unit, or other time domain shaping devices capable of realizing femtosecond laser pulse trains in picoseconds.
It should be noted that during the conversion of the nanoplasmon from spherical to ellipsoidal or nanoplanar, the processed region will also exhibit some anisotropy, and can also exhibit birefringence. The present invention is equally effective when it is desired to process such structures that have not yet been formed into a nanograting, such as anisotropic nanoholes, and is therefore within the scope of the present invention.
In another aspect of the embodiments of the present invention, there is provided a method for reducing the time required for introducing a femtosecond laser into a structure, including:
s1, generating a first femtosecond laser pulse, a second femtosecond laser pulse, … … and an Nth femtosecond laser pulse;
s2, modulating the delay time of the N femtosecond laser pulses to enable the time of the next femtosecond laser pulse of the two adjacent femtosecond laser pulses in the N femtosecond laser pulses to reach the corresponding reflector to lag the time of the previous femtosecond laser pulse;
s3, reflecting the first femtosecond laser pulse and the delayed N-1 femtosecond laser pulses to an objective lens;
s4, focusing the N femtosecond laser pulses reflected to the objective lens to a processing area inside the processing material to form an anisotropic structure.
Wherein, to obtain an effective anisotropic structure, N is generally greater than or equal to 2; wherein, the duration of the total N femtosecond laser pulses is in picosecond magnitude, the process that the N femtosecond laser pulses are focused into the processing material one by one can be regarded as the process that 1 beam of femtosecond pulse laser string in picosecond magnitude is focused into the processing material, and the time domain shape of the femtosecond laser pulse string is shown in FIG. 2; wherein the time required for the entire process of the N femtosecond laser pulses to be completely focused into the processing material is only a few picoseconds at the most.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. An apparatus for reducing the time required for a femtosecond laser to be introduced into a structure, comprising: the device comprises a femtosecond laser, N reflectors, N-1 time delay units and an objective lens; wherein N is an integer greater than or equal to 2;
the femtosecond laser is used for generating N beams of femtosecond laser beams, and each beam of femtosecond laser beam comprises a femtosecond laser pulse;
the N-1 delay units comprise:
the delay unit is used for modulating the delay time of the (i + 1) th femtosecond laser pulse, wherein i is 1, … … and N-1;
the time for the latter femtosecond laser pulse to reach the corresponding reflector in two adjacent femtosecond laser pulses lags behind the former femtosecond laser pulse;
the N mirrors include:
a first mirror for reflecting the first femtosecond laser pulse into the objective lens;
a jth reflector for transmitting the first j-1 femtosecond laser pulses and reflecting the delayed jth femtosecond laser pulse to an objective lens, wherein j is 2, … …, N;
the objective lens is used for focusing N femtosecond laser pulses to a processing area in a processing material to form an anisotropic structure; the time for which N femtosecond laser pulses are focused into the processing material is equivalent to the time for which a beam of femtosecond pulse laser string in the picosecond order is focused into the processing material.
2. An apparatus as claimed in claim 1, wherein the time required for the next femtosecond laser pulse of two adjacent femtosecond laser pulses to reach the corresponding mirror is within hundreds of femtoseconds behind the previous femtosecond laser pulse.
3. An apparatus as claimed in claim 1, wherein the anisotropic structure single point processing time is no more than several picoseconds.
4. An apparatus for reducing the time required for a femtosecond laser to be introduced into a structure according to any one of claims 1 to 3, wherein the processing material is fused silica.
5. An apparatus for reducing the time required for femtosecond laser to introduce a structure according to claim 4, wherein the anisotropic structure is a nano-grating structure.
6. A method for reducing the time required for a femtosecond laser to introduce a structure, comprising:
s1, generating a first femtosecond laser pulse, a second femtosecond laser pulse, … … and an Nth femtosecond laser pulse, wherein N is an integer greater than or equal to 2;
s2, modulating the delay time of the N femtosecond laser pulses to enable the time of the next femtosecond laser pulse of the two adjacent femtosecond laser pulses in the N femtosecond laser pulses to reach the corresponding reflector to lag the time of the previous femtosecond laser pulse;
s3, reflecting the first femtosecond laser pulse and the delayed N-1 femtosecond laser pulses to an objective lens;
s4, focusing the N femtosecond laser pulses reflected into the objective lens to a processing area inside a processing material to form an anisotropic structure; the time for which N femtosecond laser pulses are focused into the processing material is equivalent to the time for which a beam of femtosecond pulse laser string in the picosecond order is focused into the processing material.
7. A method as claimed in claim 6, wherein the time required for the femtosecond laser to introduce the structure is less than hundred femtoseconds behind the previous femtosecond laser pulse, and the time required for the next femtosecond laser pulse of two adjacent femtosecond laser pulses to reach the corresponding reflector in the N femtosecond laser pulses is less than hundred femtoseconds behind the previous femtosecond laser pulse.
8. A method as claimed in claim 6, wherein the anisotropic structure single point processing time is no more than a few picoseconds.
9. A method for reducing the time required for a femtosecond laser to be introduced into a structure according to any one of claims 6 to 8, wherein the processing material is fused silica.
10. A method as claimed in claim 9, wherein the anisotropic structure is a nano-grating structure.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113289A (en) * | 2021-03-31 | 2021-07-13 | 北京理工大学 | Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping |
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| US20050247683A1 (en) * | 2004-05-07 | 2005-11-10 | Agarwal Vishnu K | Method and apparatus to increase throughput of processes using pulsed radiation sources |
| CN104218441A (en) * | 2013-05-31 | 2014-12-17 | 中自高科（苏州）光电有限公司 | Ultrafast laser pulse sequence modulation method |
| CN111390378A (en) * | 2020-04-29 | 2020-07-10 | 华中科技大学 | Device and method for reducing pulse number required by femtosecond laser introduction structure |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050247683A1 (en) * | 2004-05-07 | 2005-11-10 | Agarwal Vishnu K | Method and apparatus to increase throughput of processes using pulsed radiation sources |
| CN104218441A (en) * | 2013-05-31 | 2014-12-17 | 中自高科（苏州）光电有限公司 | Ultrafast laser pulse sequence modulation method |
| CN111390378A (en) * | 2020-04-29 | 2020-07-10 | 华中科技大学 | Device and method for reducing pulse number required by femtosecond laser introduction structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113113289A (en) * | 2021-03-31 | 2021-07-13 | 北京理工大学 | Method for preparing silicon controlled nanowire by using femtosecond laser with remote/near field cooperative shaping |
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Application publication date: 20201127 |