CN108213718B - A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method - Google Patents
A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method Download PDFInfo
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- CN108213718B CN108213718B CN201810009815.4A CN201810009815A CN108213718B CN 108213718 B CN108213718 B CN 108213718B CN 201810009815 A CN201810009815 A CN 201810009815A CN 108213718 B CN108213718 B CN 108213718B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/60—Preliminary treatment
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Abstract
A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method, belongs to femtosecond laser application field.This method induces amorphous ge by multiple-pulse femto-second laser pulsemSbnTekOn the basis of thin-film material wetting removal effect prepares multidimensional crystalline state nanostructure, by controlling incident femto-second laser pulse polarization state, the control to multidimensional nanostructure geometric shape is realized.When using the irradiation of linear polarization femto-second laser pulse, gained crystalline state nanostructure is in anisotropic spindle geometric shape, and long axis direction is perpendicular to incident laser linear polarization；When using the irradiation of circular polarization femto-second laser pulse, gained crystalline state nanostructure is in isotropic spheroidal geometric shape.This method is simple and effective, and by the adjusting of laser polarization state, accurate control generates the geometric shape of nanostructure, to control the optic response of dielectric nanostructures.This method has vital application prospect in the control of large area, low-loss photon application glazing.
Description
Technical field
The present invention relates to femtosecond laser application field more particularly to a kind of induction of control femtosecond laser multi-pulse are amorphous
GemSbnTekThe method of film preparation crystalline state nanostructure geometric shape regulation.
Background technique
Meta Materials are widely paid close attention to once it is found that causing extensive people, it is generally recognized that Meta Materials are through artificial compound
The prepared physical characteristic composite construction not having with nature.Currently, Meta Materials are mostly by being less than optical wavelength
Structure arranges on the surface of the material in a repetitive fashion, and this structure can be the materials such as metal, dielectric.In recent years, based on expensive
The Meta Materials substitute of metal surface plasmon resonance characteristic causes the extensive concern of academia, to overcome noble metal structures
In the absorption loss for the free carrier that optical frequency is shown.Transparent dielectric based on the resonance of electric and magnetic fields rice formula is received
Rice structure provides a kind of effective low-loss alternative structure for noble metal Meta Materials surface.As a kind of typical ultrafast phase
Become material, GemSbnTekTurn conversion rate with its good thermal stability, height and high rewrite cycle characteristic is widely used in
Optical disc storage and non-effumability Electronic saving field.Under condition of different temperatures, GST can be between amorphous state and crystalline state
Mutually conversion, and the property differences such as higher optics, electricity are showed, it can be widely applied to photonics, photoelectronics, heat radiation
In source and Photobiology device, there is huge application and potentiality to be exploited.So far, the manufacture of many nanostructures is emerged
Method, is used to prepare functional nanostructure surface, including electron beam lithography, dry method deep etching, laser direct-writing, multiple-beam interference and
Duplicating molded technology etc..A large number of studies show that the shape of Meta Materials surface nano-structure, size, direction, arrangement and surrounding are situated between
Matter environment directly decides manipulation and responding ability of the Meta Materials surface to electromagnetic wave.Thus, to substrate surface dielectric nanometer
The preparation of structure and morphology control become the emphasis and difficult point in current Meta Materials surface field.Processing method usually exists and adds at present
The disadvantages of work low efficiency, at high cost, complex procedures, and in numerous processing methods, femtosecond laser direct writing technology is high-precision with its
The processing method that the unique advantage of degree, high scalability and high controllability becomes the great prospect of surface nano-structure.Increasingly developed
Laser technology makes laser light source reach unprecedented selection and controllability in terms of energy, time, space, further promotees
Into the development of laser micro/nano manufacturing technology.In document " Laser printing of silicon nanoparticles
In with resonant optical electric and magnetic responses ", Zywietz et al. passes through femtosecond
Laser-induced material transfer realizes the preparation of nano silicon particles in receptor surface.However this processing method is to processing conditions
It is required that it is harsh, need additional receiver.
Summary of the invention
The object of the present invention is to provide a kind of control femtosecond laser multi-pulses to induce amorphous gemSbnTekFilm preparation is brilliant
The method of state nano-structure morphology develops a kind of full dielectric Meta Materials method of surface finish of femtosecond laser controllable preparation, into one
Step expands in nanoscale the practical application that aspect is manipulated and responded to electromagnetic wave.
Idea of the invention is that acting on amorphous ge by using Gaussian Profile femtosecond laser multi-pulsemSbnTekFilm
Surface is based on surface periodic structure Production conditions, i.e., irradiates under the action condition of 1.2~2.5 times of multiple-pulse threshold energies
Sample surface.According to gauss laser Energy distribution feature, material surface is divided into two objects by the pulse energy being deposited on film
Conversion zone is managed, center is more than thin film ablation threshold region, and material is thermally isolated with substrate generation, and one side material occurs to melt simultaneously
Reduce surface area under the action of Rayleigh unstability with the state that tends towards stability, finally solidifies to form single nanostructure at center；
On the other hand the circular membrane material cut is in Rayleigh unstability and multiple-pulse femtosecond laser induction surface periodic structure
The nanostructure arranged perpendicular to laser polarization direction is formed under the combined influence of generation mechanism under the conditions of linearly polarized laser.And
For gaussian-shape femto-second laser pulse Laser edge region, under linear polarization multiple-pulse Femtosecond-Laser Pulse Excitation due to incident laser with
The interference of surface plasma wave forms the surface periodic structure perpendicular to laser polarization direction, i.e. external waviness structure.
Finally multi-dimensional surface ripple struction-periodic arrangement nanostructure-mono- nanostructure is formd in entire laser action region
Composite construction.The processing conditions of multiple-pulse provides necessary mechanism of action for structural form regulation, institute's shape under front and continued impulse action
At micro-nano structure under post laser impulse action field distribution generate feedback effect.Under linearly polarized laser effect, swashing
Make post laser zone of action center field distribution along grating under the initial raster structure function formed in Photon action process
Distribution arrangement produces orientation enhancing, so that central film material is under laser action that is, perpendicular to laser polarization direction
Melt, cohesion is the spinning that long axis is parallel to external waviness structure direction under perpendicular to the thermal stress disturbance on laser polarization direction
Capitate nanostructure.Under circularly polarized laser effect, center field distribution isotropism, under the action of wetting removal effect, laser
Action center region forms isotropic nanostructure.
The purpose of the present invention is what is be achieved through the following technical solutions:
A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method, method includes the following steps:
Step 1, sample prepare, and deposit the amorphous of 20~70nm by magnetically controlled sputter method in substrate surface
GemSbnTekFilm；
Step 2, laser energy are adjusted: adjusting laser energy using half-wave plate-polarizing film combination and neutral density attenuator
It is allowed to be greater than the ablation threshold of deposit film sample, and laser energy can continuously adjust, preferably, pulse energy is adjusted to
1.2~2.5 times of certain pulses number ablation threshold；
Processed sample is fixed on sextuple translation stage by step 3, by imaging CCD observation, adjusts optical path, it is ensured that swash
Light incident direction is vertical with processed sample surface；
Step 4 adjusts different linear polarizations under linear polarization multiple-pulse Femtosecond-Laser Pulse Excitation, or to laser
Polarization state carries out regulation in circular polarization state；
Under the conditions of linear polarization Femtosecond-Laser Pulse Excitation, laser action area surface configuration is distributed along gaussian-shape laser, from
Edge shows external waviness structure-periodic arrangement nanostructure-single nanoparticle composite construction to center, wherein surface wave
Line structure and the orientation of periodic arrangement nanostructure are perpendicular to linearly polarized laser direction, and periodic arrangement nanostructure is in
Long axis is perpendicular to the anisotropy ellipsoid geometric shape of laser polarization direction, and single nanoparticle presentation long axis in center is perpendicular to laser
The anisotropy spindle geometric shape of polarization direction；
Under circular polarization state multiple-pulse Femtosecond-Laser Pulse Excitation, laser action area surface configuration is distributed along gaussian-shape laser,
Evenly distributed nanostructure-single nanoparticle composite construction is presented from edge to center, wherein evenly distributed nanostructure is in
Isotropic spherical geometric shape is also presented in existing isotropic spherical structure, center single nanoparticle；
Further, in step 4, the regulation method of the laser polarization state the following steps are included:
(1) half-wave plate is added in the optical path, adjusts half-wave plate optical axis and initial laser polarization direction angle is obtained along difference
The linear polarization femto-second laser pulse in direction；
(2) mechanical switch is opened, by imaging CCD, laser is focused on material by achromatism double glued plano-convex lens
Surface；
(3) it adjusts incident laser frequency and controls the mechanical switch opening time, so that arteries and veins of the incident laser pulse to set
Number irradiation is rushed to processed sample surface, pulse number is 100~500；
(4) different linearly polarized laser directions femto-second laser pulse effect under, processed sample surface process it is each to
Anisotropic surface；
Or quarter-wave plate is added in the optical path, it is in by adjusting wave plate optical axis direction with initial laser polarization direction
45 ° of angles obtain circular polarization state femtosecond laser.Under the action of multiple-pulse circular polarization femtosecond laser, processed in sample surface several
What form isotropism and composite nanostructure arranged in a uniform.
Preferably, by being programmed to the sextuple mobile platform mobile process, to adjacent two laser irradiations point
Position is controlled, available evenly arranged composite nanostructure array.
Preferably, the processing object lens select focal length for the bis- glued plano-convex lens of 100mm.
Preferably, described carry out plating Ge in processed sample surfacemSbnTekThe method that film process uses magnetron sputtering,
Thickness range is 20nm~70nm.
Preferably, the processed sample choice of the substrates silicon, silica or SOI material.
Beneficial effect
The invention proposes a kind of methods of full dielectric nanostructures, and accurately control the geometric form of nanostructure
State optimizes its optic response.The low-loss of full dielectric nanostructures provides condition for the excitation of strong magnetic resonance, while can
High ohmic loss instead of plasmon nanostructure in visible light wave range shows preferable optic response.It is proposed of the invention
The preparation of development and Meta Materials for full dielectric nano-photonics devices has vital application value.
Detailed description of the invention
Fig. 1 is in specific embodiment, and femtosecond laser regulates and controls GemSbnTekCrystalline state nanostructure geometric shape processes index path:
Label: 1- femto-second laser；The first half-wave plate of 2-；3- polarizing film；4- neutral density attenuator；5- mechanical switch；
6- dichroscope；7- beam splitter；8- illuminates white light source；9- plano-convex lens；CCD is imaged in 10-；The second half-wave plate of 11-；12- tetra- divides
One of wave plate；13- processes object lens；14- sample to be processed；15- 6 DOF mobile platform.
Fig. 2 is the process flow diagram of the method for the present invention.
Specific embodiment
With reference to the accompanying drawing and embodiment is described further the present invention.
In present embodiment, amorphous ge is induced using different polarization states multiple-pulse femtosecond lasermSbnTekFilm preparation
Multidimensional crystalline state nanostructure and the method regulated and controled to its geometric shape, specific processing optical path are as shown in Figure 1.It processes optical path
Femto-second laser pulse is generated for femto-second laser 1, femto-second laser pulse declines by the first half-wave plate 2, polarizing film 3, neutral density
Subtract piece 4, after mechanical switch 5, through processing object lens after the second half-wave plate 11, quarter-wave plate 12 after being reflected by dichroscope 6
13 focus on 14 surface of sample, and sample 14 to be processed is fixed on sextuple mobile platform 15；The illumination process of white light source 8 beam splitter 7,
It is processed that 14 back reflection light of sample is irradiated to after dichroscope 6, the second half-wave plate 11, quarter-wave plate 12 and processing object lens 13
Object lens 13, quarter-wave plate 12, the second half-wave plate 11, dichroscope 6, it is incident after plano-convex lens 9 by beam splitter reflection 7
Into imaging CCD10.
The femto-second laser parameter used in experimentation is as follows: central wavelength 800nm, pulse width 35fs, weight
Complex frequency is 1kHz, linear polarization；Sample to be processed is the amorphous ge that 20-70nm thickness is deposited in substrate in experimentmSbnTekIt is thin
Film.
Laser of the femto-second laser 1 using the production of U.S.'s spectrum physics (Spectrum Physics) company, laser wave
Long 800nm, pulse width 35fs, repetition rate 1KHz, pulse ceiling capacity 3mJ, light distribution are gaussian-shape, linear polarization.
Neutral density attenuator 4 uses Daheng's photoelectricity GCC-3030 circle neutral density gradual filter, arrives in visible light
The ratio of absorption/reflection light and transmitted light by adjusting the rotation angle of eyeglass, can be changed in infrared light district to change optical attenuation
Size, laser energy adjustable range be 1% -90%.
Mechanical switch 5 can control Laser exposure dwell times, when switch responds using the SH05 of Thorlabs company production
Between be 1ms.
Specific embodiment one:
To process different shape crystalline state Ge2Sb2Te5For the full dielectric composite nanostructure of anisotropy geometric shape, adopt
Regulate and control method with multiple-pulse femtosecond laser of the invention, used femto-second laser pulse is linear polarization, specific procedure of processing
It is as follows:
Adjust optical path, it is ensured that laser light incident direction is vertical with processed sample surface；
(1) sample preparation: the present embodiment is by the method for magnetron sputtering in 10mm × 10mm × 1mm silica sample
50nm thickness Ge is plated in sheet2Sb2Te5Film；
(2) it adjusts energy: adjusting laser energy using the first half-wave plate 2 and the combination of polarizing film 3 and neutral density attenuator 4
It is allowed to be greater than and is processed 1.1 μ J of sample film ablated surface threshold value, and laser energy can continuously adjust；
(3) femto-second laser pulse is focused using double glued plano-convex lens 13 that focal length is 100mm, is processed sample
14 are fixed on sextuple mobile platform 15, by the way that the observation of CCD8 is imaged, adjusts optical path and make incident laser perpendicular to sample 14
Surface；
(4) keeping 1 pulse frequency of fs-laser system is 1kHz, sets 5 opening time of mechanical switch as 100ms, so that
Being irradiated to sample surface umber of pulse is 100；
(5) the second half-wave plate optical axis and initial laser polarization direction angle are adjusted for step-length with 10 °, so that laser polarization side
It being continuously adjusted to 20 ° for step-length, the angle α increases to 180 ° from 0 °, under different linearly polarized laser directions, i.e., the different angles α, to quilt
Processing sample surface is irradiated, and obtains ripple struction direction and nanostructure long axis direction with laser polarization direction consecutive variations
External waviness structure-periodic arrangement nanostructure-single nanoparticle composite construction.
Embodiment 2:
To eliminate linear polarization multiple-pulse preparation crystalline state Ge2Sb2Te5Composite nanostructure anisotropy keeps its presentation each to same
Property geometric shape for, using multiple-pulse femtosecond of the invention swash processing polarization regulation method, used femto-second laser pulse
For circular polarization state, specific procedure of processing is as follows:
Other steps are same as Example 1, the difference is that: add in the optical path before step (2) energy adjustment carries out
Enter quarter-wave plate 12, adjust quarter-wave plate 12 so that 45 ° of wave plate optical axis direction and former laser polarization direction angle from
And obtain circular polarization femto-second laser pulse.
To be processed under the conditions of circular polarization state femto-second laser pulse in step (5), by changing incident pulse energy
Size obtains the evenly arranged nano particle-single nanoparticle composite construction being gradually reduced with pulse energy increased in size,
Various sizes of nano particle is isotropism spherical structure, and anisotropy is eliminated, and nanostructure presents isotropic
Geometry.
Above-described specific descriptions have carried out further specifically the purpose of invention, technical scheme and beneficial effects
It is bright, it should be understood that the above is only a specific embodiment of the present invention, the protection model being not intended to limit the present invention
It encloses, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should be included in the present invention
Protection scope within.
Claims (3)
1. a kind of femtosecond laser regulates and controls GemSbnTekCrystalline state nanostructure geometric shape method, which is characterized in that including following step
It is rapid:
Step 1, sample preparation: in the amorphous ge of substrate surface plating 20~70nm thicknessmSbnTekFilm；
Step 2, laser energy are adjusted: being adjusted laser energy using half-wave plate-polarizing film combination and neutral density attenuator and be allowed to
Greater than the ablation threshold of deposit film sample, and laser energy can continuously adjust, and pulse energy is adjusted to multi-shot ablation threshold
1.2~2.5 times of value；
Processed sample is fixed on sextuple translation stage by step 3, by imaging CCD observation, adjusts optical path, it is ensured that laser enters
It is vertical with processed sample surface to penetrate direction；
Step 4 adjusts different linear polarizations under linear polarization multiple-pulse Femtosecond-Laser Pulse Excitation, or to laser polarization
State carries out regulation in circular polarization state；
Under the conditions of linear polarization Femtosecond-Laser Pulse Excitation, laser action area surface configuration is distributed along gaussian-shape laser, from edge
External waviness structure-periodic arrangement nanostructure-single nanoparticle composite construction is showed to center, wherein external waviness knot
Structure and the orientation of periodic arrangement nanostructure are perpendicular to linearly polarized laser direction, and periodic arrangement nanostructure is in long axis
Perpendicular to the anisotropy ellipsoid geometric shape of laser polarization direction, long axis is presented perpendicular to laser polarization in center single nanoparticle
The anisotropy spindle geometric shape in direction；
Under circular polarization state multiple-pulse Femtosecond-Laser Pulse Excitation, laser action area surface configuration is distributed along gaussian-shape laser, from side
Evenly distributed nanostructure-single nanoparticle composite construction is presented to center in edge, wherein evenly distributed nanostructure is presented respectively
To the spherical structure of the same sex, isotropic spherical geometric shape is also presented in center single nanoparticle；
Amorphous ge is deposited on selected substrate surface, silica, silicon or SOI materialmSbnTekFilm is using magnetron sputtering
Method, thickness range are 20nm~70nm, m, n, and the selection of k value passes through the control of target material composition used in magnetron sputtering.
2. a kind of femtosecond laser according to claim 1 regulates and controls GemSbnTekCrystalline state nanostructure geometric shape method,
Be characterized in that: in step 4, the regulation method of the laser polarization state the following steps are included:
(1) half-wave plate is added in the optical path, adjusts half-wave plate optical axis and initial laser polarization direction angle is obtained along different directions
Linear polarization femto-second laser pulse；
(2) mechanical switch is opened, by imaging CCD, laser is focused on material surface by achromatism double glued plano-convex lens；
(3) it adjusts incident laser frequency and controls the mechanical switch opening time, so that pulse of the incident laser pulse to set
Number irradiation is 100~500 to sample surface, pulse number is processed；
(4) under the effect of different linearly polarized laser directions femto-second laser pulse, anisotropy is processed in processed sample surface
Surface；
Or quarter-wave plate is added in the optical path, by adjusting wave plate optical axis direction and initial laser polarization direction in 45 °
Angle obtains circular polarization state femtosecond laser；Under the action of multiple-pulse circular polarization femtosecond laser, geometry is processed in sample surface
Form isotropism and composite nanostructure arranged in a uniform.
3. a kind of femtosecond laser according to claim 1 regulates and controls GemSbnTekCrystalline state nanostructure geometric shape method,
Be characterized in that: the crystalline state nanostructure geometric shape regulation method is to make by using Gaussian Profile femtosecond laser multi-pulse
For amorphous gemSbnTekFilm surface is based on surface periodic structure Production conditions, in 1.2~2.5 times of multiple-pulse threshold values
Sample surface is irradiated under the action condition of energy；According to gauss laser Energy distribution feature, the pulse energy being deposited on film
Material surface is divided into two physical reactions regions, center is more than thin film ablation threshold region, and material is thermally isolated with substrate generation,
One side material occurs to melt and reduces surface area under the action of Rayleigh unstability with the state that tends towards stability, and finally coagulates at center
Solid is at single nanostructure；On the other hand the circular membrane material cut is in Rayleigh unstability and multiple-pulse femtosecond laser
It induces and is formed under the conditions of linearly polarized laser perpendicular to laser polarization side under the combined influence of surface periodic structure generation mechanism
To the nanostructure of arrangement.
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| GB201819189D0 (en) * | 2018-11-26 | 2019-01-09 | Univ Southampton | Method for fabricating nanostructured optical elements |
| CN109434289B (en) * | 2018-12-18 | 2021-03-30 | 北京工业大学 | Femtosecond laser manufacturing method for tunable phase-change nano-structure super surface |
| CN110280776B (en) * | 2019-04-15 | 2020-10-16 | 清华大学 | Gold nanorod reinforced reshaping method and system based on femtosecond double-pulse laser |
| CN110385529B (en) * | 2019-07-09 | 2024-07-19 | 湖南工业大学 | Spiral bevel gear femtosecond laser processing system and fine correction method thereof |
| GB201912337D0 (en) * | 2019-08-28 | 2019-10-09 | Univ Southampton | Method of forming birefringent structures in an optical element |
| CN110560703B (en) | 2019-09-18 | 2020-09-18 | 清华大学 | Preparation method and system of gold nanorod with high catalytic activity based on femtosecond laser |
| CN111007586B (en) * | 2019-12-18 | 2021-09-17 | 中国工程物理研究院上海激光等离子体研究所 | Preparation method of large-size nano periodic grating |
| CN112894149B (en) | 2021-01-21 | 2021-11-30 | 北京理工大学 | Ultrafast continuous three-dimensional imaging system and method for ablating object by ultrashort pulse laser |
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