Summary of the invention
The object of this invention is to provide a kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form, to overcome currently available technology above shortcomings.
The object of the invention is to be achieved through the following technical solutions:
A method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form, the method comprises the following steps:
Step 1: open pulse shaper, adjust light path, guarantee that laser incident direction is vertical with processed sample surface;
Step 2: regulate different polarization directions under linear polarization Femtosecond-Laser Pulse Excitation, laser polarization state is regulated and controled simultaneously;
Step 3: the surface periodic structure under linear polarization Femtosecond-Laser Pulse Excitation presents oval geometric shape, the surface periodic micro-nano structure based on pulse train carries out anisotropy elimination; And
Step 4: control laser direct-writing direction and laser rays polarization direction and adjust line width.
Further, in step 2, the regulate and control method of described laser polarization state comprises the following steps:
(1) regulating impulse energy is 0.8J/cm
2, in light path, add half-wave plate, regulate half-wave plate optical axis and former polarization direction angle to obtain the linear polarization femto-second laser pulse of different directions;
(2) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(3) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting;
(4), under different linearly polarized laser effects, process the surface periodic structure of different geometric shapes in sample surface;
(5) in light path, add quarter-wave plate, regulate 45 ° of wave plate optical axis direction and former laser polarization direction angles to obtain circularly polarized laser; And
(6) repeat (2), (3) process, under circularly polarized laser effect, process the isotropic surface periodic structure of geometric shape in sample surface.
Further, in described step 3, the described surface periodic micro-nano structure anisotropy removing method based on pulse train comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting; And
(3) process the isotropic surface periodic structure of geometric shape in sample surface.
Further, in described step 4, the processing method that line width is adjusted in described control laser direct-writing direction and laser rays polarization direction comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) laser incident frequency programming Control mobile platform speed are set to control the umber of pulse inciding in sample surface unit are, on sample, process the chain ripple struction perpendicular to laser polarization direction;
(3) in light path, add half-wave plate, adjust the linear polarization of incident laser by half-wave plate optical axis and the angle control of former polarization direction, keep laser scanning direction constant, directly write out different cycles trend on crystal silicon surface, the chain ripple struction of different live widths.
Beneficial effect of the present invention is: the present invention proposes a kind of method that can precisely controlling line width, can accurately gated sweep live width by adjusting laser polarization direction, preparation efficiency and the precision of large area periodic structure are greatly improved, simultaneously, the anisotropic control of relevant surface period structural form that the present invention proposes, greatly improve its machining accuracy, there is vital using value at aspects such as information storages.
Detailed description of the invention
A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form described in the embodiment of the present invention, the method comprises the following steps:
Step 1: open pulse shaper, adjust light path, guarantee that laser incident direction is vertical with processed sample surface;
Step 2: regulate different polarization directions and laser polarization state is regulated and controled under linear polarization Femtosecond-Laser Pulse Excitation;
Step 3: the surface periodic structure under linear polarization Femtosecond-Laser Pulse Excitation presents oval geometric shape, the surface periodic micro-nano structure based on pulse train carries out anisotropy elimination; And
Step 4: control laser direct-writing direction and laser rays polarization direction and adjust line width.
In step 2, the regulate and control method of described laser polarization state comprises the following steps:
(1) regulating impulse energy is 0.8J/cm
2, in light path, add half-wave plate, regulate half-wave plate optical axis and former polarization direction angle to obtain the linear polarization femto-second laser pulse of different directions;
(2) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(3) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting;
(4), under different linearly polarized laser effects, process the surface periodic structure of different geometric shapes in sample surface;
(5) in light path, add quarter-wave plate, regulate 45 ° of wave plate optical axis direction and former laser polarization direction angles to obtain circularly polarized laser; And
(6) repeat (2), (3) process, under circularly polarized laser effect, process the isotropic surface periodic structure of geometric shape in sample surface.
In described step 3, the described surface periodic micro-nano structure anisotropy removing method based on pulse train comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting; And
(3) process the isotropic surface periodic structure of geometric shape in sample surface.
In described step 4, the processing method that line width is adjusted in described control laser direct-writing direction and laser rays polarization direction comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) laser incident frequency programming Control mobile platform speed are set to control the umber of pulse inciding in sample surface unit are, on sample, process the chain ripple struction perpendicular to laser polarization direction;
(3) in light path, add half-wave plate, adjust the linear polarization of incident laser by half-wave plate optical axis and the angle control of former polarization direction, keep laser scanning direction constant, directly write out different cycles trend on crystal silicon surface, the chain ripple struction of different live widths.
Specific embodiment one
Wavelength is 800nm, and pulse width is 50fs, and repetition rate is 1kHz, and the linear polarization femto-second laser pulse that light intensity is Gaussian distribution is compressed the dispersion in femtosecond laser communication process is carried out to fine compensation by pulse shaper; Utilize the combination of half-wave plate-polarizer to regulate continuously the energy of laser; Utilize half-wave plate to realize the linear polarization of femto-second laser pulse is regulated, quarter-wave plate is realized circular polarization state laser pulse; By pulse shaper, in time domain, be modulated to femto-second laser pulse sequence (at least comprise two subpulses in each pulse train, be 100fs-2ps the time delay between subpulse, can by pulse shaper control).Utilize achromatism two gummed planoconvex spotlight (focal length is 100mm) that femtosecond laser is focused on to sample surfaces; Sample is fixed on 6 dimension precise mobile platforms, utilizes femto-second laser pulse frequency setting and mechanical switch opening time to control single-point femto-second laser pulse effect number; Utilize in femto-second laser pulse frequency setting and straight writing rate setup control laser direct-writing unit are and act on pulse number, precise mobile platform can move with the speed of 1-2000 μ m/s according to predefined program, and repetitive positioning accuracy is 1 μ m; Control a certain number of different linear polarization and circular polarization state femto-second laser pulse, can go out different geometric shape surface periodic micro-nano structures at crystal silicon spatial induction.Set certain pulse frequency, the relative motion of programme-control precise mobile platform and laser spot also regulates the linear polarization of laser pulse, can prepare on crystal silicon surface the surface periodic micro-nano structure of different live widths.
What above-mentioned fs-laser system adopted is the laser instrument that U.S.'s spectrum thing (Spectrum Physics) company produces, optical maser wavelength 800nm, pulse width 50fs, repetition rate 1KHz, pulse ceiling capacity 3mJ, light distribution is Gaussian, linear polarization.
Pulse shaper is the MIIPS box that Biophotonic company of the U.S. produces, and the dispersion that can produce in communication process femtosecond laser is carried out fine compensation and also can be realized traditional femto-second laser pulse is shaped to the pulse train that be 100fs-5ps interval time.
Specific embodiment two: test sample is monocrystalline silicon
(1) at 0.8J/cm
2energy density under, impulse action number 20, under the single-point femto-second laser pulse sequence effect of different linear polarization, obtain the surface periodic micro-nano structure of different elliptical shapes, the axial ratio of oval-shaped laser induced surface periodic structure is about 0.6, and its long axis direction is parallel to laser polarization direction.
(2), under irradiation parameters, under the effect of circular polarization single-point femto-second laser pulse, obtain circular surface periodic micro-nano structure geometric shape.
(3), under irradiation parameters, the surface periodic micro-nano structure under linear polarization pulse train (two subpulses, time delay 300fs) effect has been eliminated the anisotropy based on laser polarization state, presents circular geometry form.
(4) at 0.8J/cm
2energy density, pulse recurrence frequency 200Hz, under laser direct-writing speed 100 μ m/s conditions, keep directly writing direction constant, adjust linearly polarized laser polarization direction and laser direct-writing angular separation, the variation from 0 ° to 90 °, obtains the surface periodic micro-nano structure of different live widths.Parallel with laser polarization direction or directly write limit live width when vertical when directly writing direction.Gained live width minimum when directly writing direction and being parallel to laser polarization direction, gained live width maximum while directly writing direction perpendicular to laser polarization direction.
The present invention is not limited to above-mentioned preferred forms; anyone can draw other various forms of products under enlightenment of the present invention; no matter but do any variation in its shape or structure; every have identical with a application or akin technical scheme, within all dropping on protection scope of the present invention.