CN104209652A - Method for controlling shape of femtosecond laser induction crystalline silicon surface micro-nano structure - Google Patents

Method for controlling shape of femtosecond laser induction crystalline silicon surface micro-nano structure Download PDF

Info

Publication number
CN104209652A
CN104209652A CN201310209667.8A CN201310209667A CN104209652A CN 104209652 A CN104209652 A CN 104209652A CN 201310209667 A CN201310209667 A CN 201310209667A CN 104209652 A CN104209652 A CN 104209652A
Authority
CN
China
Prior art keywords
laser
pulse
control
nano structure
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310209667.8A
Other languages
Chinese (zh)
Other versions
CN104209652B (en
Inventor
姜澜
韩伟娜
李晓炜
徐乐
袁艳萍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Chengdu Xinruide Technology Co., Ltd.
Original Assignee
EPHOTON Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EPHOTON Co Ltd filed Critical EPHOTON Co Ltd
Priority to CN201310209667.8A priority Critical patent/CN104209652B/en
Publication of CN104209652A publication Critical patent/CN104209652A/en
Application granted granted Critical
Publication of CN104209652B publication Critical patent/CN104209652B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material

Abstract

The invention relates to a method for controlling the shape of a femtosecond laser induction crystalline silicon surface micro-nano structure. According to the method, on the basis of control over the geometrical shape of a single-point femtosecond laser induction crystalline silicon surface periodic micro-nano structure, direct-writing line width is adjusted and regulated through control over the linear polarization direction of the femtosecond laser and the laser direct writing direction, the minimum line width surface periodic micro-nano structure is obtained when the laser direct writing direction and the linear polarization direction are parallel, and the maximum line width surface periodical micro-nano structure is obtained when the laser direct writing direction and the linear polarization direction are perpendicular. The method has the advantages that through simple adjustment based on laser polarization states and application of a femtosecond laser impulse sequence, the geometrical shape of the femtosecond laser induction crystalline silicon surface periodic structure can be accurately controlled, so that accurate controllable parameters are provided for generation of a femtosecond laser direct-writing induction large-area periodic structure, and the method is suitable for manufacturing femtosecond laser direct-writing accurate induction large-area surface periodic structure.

Description

A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form
Technical field
The present invention relates to femtosecond laser application, relate in particular to a kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form.
Background technology
Nineteen sixty-five Birnbaum has induced regular ripple struction with ruby laser at semiconductor surface first, after this, researcher utilize various continuously, pulse laser induced periodic structure in surface and the inside of various materials.The advantage that has low pollution in femtosecond laser process and can process various complicated shape devices etc., has a wide range of applications at the micro-/manufacture field of receiving.The generation of femtosecond laser induced surface periodic structure can realize the laser machined structures on nanoscale, has potential important application at aspects such as photonic propulsion, photoelectronics, infrared source and Photobiology devices.On the other hand, also can be used for the processing of optical grating construction for the control of this periodic structure.Therefore be significant for the control research of this surface periodic structure manufacture.Apply widely but still restricting it for the difficult problem in the precision control of this surface periodic micro-nano structure.Mainly comprise that pointwise overlapping scan is directly write the preparation control of great scale period micro-nano structure for the machining control of single-point self assembly periodicity micro-nano structure and on the single-point self assembly basis that periodically micro-nano structure is studied.In document " Two-dimensional microstructures induced by femtosecond vector light fields on silicon ", the people such as Lou, by the adjusting to laser polarization direction, has realized the preparation of complicated two-dimensional half-wavelength surface period structure.But be the control to its ripple trend for the control of this surface periodic structure, while being prepared for large area periodic structure, adjacent scanning element spacing is its major parameter.Thereby the extensive use that is this surface periodic structure for the control of surface period construction geometry form is most important.
Summary of the invention
The object of this invention is to provide a kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form, to overcome currently available technology above shortcomings.
The object of the invention is to be achieved through the following technical solutions:
A method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form, the method comprises the following steps:
Step 1: open pulse shaper, adjust light path, guarantee that laser incident direction is vertical with processed sample surface;
Step 2: regulate different polarization directions under linear polarization Femtosecond-Laser Pulse Excitation, laser polarization state is regulated and controled simultaneously;
Step 3: the surface periodic structure under linear polarization Femtosecond-Laser Pulse Excitation presents oval geometric shape, the surface periodic micro-nano structure based on pulse train carries out anisotropy elimination; And
Step 4: control laser direct-writing direction and laser rays polarization direction and adjust line width.
Further, in step 2, the regulate and control method of described laser polarization state comprises the following steps:
(1) regulating impulse energy is 0.8J/cm 2, in light path, add half-wave plate, regulate half-wave plate optical axis and former polarization direction angle to obtain the linear polarization femto-second laser pulse of different directions;
(2) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(3) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting;
(4), under different linearly polarized laser effects, process the surface periodic structure of different geometric shapes in sample surface;
(5) in light path, add quarter-wave plate, regulate 45 ° of wave plate optical axis direction and former laser polarization direction angles to obtain circularly polarized laser; And
(6) repeat (2), (3) process, under circularly polarized laser effect, process the isotropic surface periodic structure of geometric shape in sample surface.
Further, in described step 3, the described surface periodic micro-nano structure anisotropy removing method based on pulse train comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting; And
(3) process the isotropic surface periodic structure of geometric shape in sample surface.
Further, in described step 4, the processing method that line width is adjusted in described control laser direct-writing direction and laser rays polarization direction comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) laser incident frequency programming Control mobile platform speed are set to control the umber of pulse inciding in sample surface unit are, on sample, process the chain ripple struction perpendicular to laser polarization direction;
(3) in light path, add half-wave plate, adjust the linear polarization of incident laser by half-wave plate optical axis and the angle control of former polarization direction, keep laser scanning direction constant, directly write out different cycles trend on crystal silicon surface, the chain ripple struction of different live widths.
Beneficial effect of the present invention is: the present invention proposes a kind of method that can precisely controlling line width, can accurately gated sweep live width by adjusting laser polarization direction, preparation efficiency and the precision of large area periodic structure are greatly improved, simultaneously, the anisotropic control of relevant surface period structural form that the present invention proposes, greatly improve its machining accuracy, there is vital using value at aspects such as information storages.
Detailed description of the invention
A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form described in the embodiment of the present invention, the method comprises the following steps:
Step 1: open pulse shaper, adjust light path, guarantee that laser incident direction is vertical with processed sample surface;
Step 2: regulate different polarization directions and laser polarization state is regulated and controled under linear polarization Femtosecond-Laser Pulse Excitation;
Step 3: the surface periodic structure under linear polarization Femtosecond-Laser Pulse Excitation presents oval geometric shape, the surface periodic micro-nano structure based on pulse train carries out anisotropy elimination; And
Step 4: control laser direct-writing direction and laser rays polarization direction and adjust line width.
In step 2, the regulate and control method of described laser polarization state comprises the following steps:
(1) regulating impulse energy is 0.8J/cm 2, in light path, add half-wave plate, regulate half-wave plate optical axis and former polarization direction angle to obtain the linear polarization femto-second laser pulse of different directions;
(2) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(3) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting;
(4), under different linearly polarized laser effects, process the surface periodic structure of different geometric shapes in sample surface;
(5) in light path, add quarter-wave plate, regulate 45 ° of wave plate optical axis direction and former laser polarization direction angles to obtain circularly polarized laser; And
(6) repeat (2), (3) process, under circularly polarized laser effect, process the isotropic surface periodic structure of geometric shape in sample surface.
In described step 3, the described surface periodic micro-nano structure anisotropy removing method based on pulse train comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting; And
(3) process the isotropic surface periodic structure of geometric shape in sample surface.
In described step 4, the processing method that line width is adjusted in described control laser direct-writing direction and laser rays polarization direction comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) laser incident frequency programming Control mobile platform speed are set to control the umber of pulse inciding in sample surface unit are, on sample, process the chain ripple struction perpendicular to laser polarization direction;
(3) in light path, add half-wave plate, adjust the linear polarization of incident laser by half-wave plate optical axis and the angle control of former polarization direction, keep laser scanning direction constant, directly write out different cycles trend on crystal silicon surface, the chain ripple struction of different live widths.
Specific embodiment one
Wavelength is 800nm, and pulse width is 50fs, and repetition rate is 1kHz, and the linear polarization femto-second laser pulse that light intensity is Gaussian distribution is compressed the dispersion in femtosecond laser communication process is carried out to fine compensation by pulse shaper; Utilize the combination of half-wave plate-polarizer to regulate continuously the energy of laser; Utilize half-wave plate to realize the linear polarization of femto-second laser pulse is regulated, quarter-wave plate is realized circular polarization state laser pulse; By pulse shaper, in time domain, be modulated to femto-second laser pulse sequence (at least comprise two subpulses in each pulse train, be 100fs-2ps the time delay between subpulse, can by pulse shaper control).Utilize achromatism two gummed planoconvex spotlight (focal length is 100mm) that femtosecond laser is focused on to sample surfaces; Sample is fixed on 6 dimension precise mobile platforms, utilizes femto-second laser pulse frequency setting and mechanical switch opening time to control single-point femto-second laser pulse effect number; Utilize in femto-second laser pulse frequency setting and straight writing rate setup control laser direct-writing unit are and act on pulse number, precise mobile platform can move with the speed of 1-2000 μ m/s according to predefined program, and repetitive positioning accuracy is 1 μ m; Control a certain number of different linear polarization and circular polarization state femto-second laser pulse, can go out different geometric shape surface periodic micro-nano structures at crystal silicon spatial induction.Set certain pulse frequency, the relative motion of programme-control precise mobile platform and laser spot also regulates the linear polarization of laser pulse, can prepare on crystal silicon surface the surface periodic micro-nano structure of different live widths.
What above-mentioned fs-laser system adopted is the laser instrument that U.S.'s spectrum thing (Spectrum Physics) company produces, optical maser wavelength 800nm, pulse width 50fs, repetition rate 1KHz, pulse ceiling capacity 3mJ, light distribution is Gaussian, linear polarization.
Pulse shaper is the MIIPS box that Biophotonic company of the U.S. produces, and the dispersion that can produce in communication process femtosecond laser is carried out fine compensation and also can be realized traditional femto-second laser pulse is shaped to the pulse train that be 100fs-5ps interval time.
Specific embodiment two: test sample is monocrystalline silicon
(1) at 0.8J/cm 2energy density under, impulse action number 20, under the single-point femto-second laser pulse sequence effect of different linear polarization, obtain the surface periodic micro-nano structure of different elliptical shapes, the axial ratio of oval-shaped laser induced surface periodic structure is about 0.6, and its long axis direction is parallel to laser polarization direction.
(2), under irradiation parameters, under the effect of circular polarization single-point femto-second laser pulse, obtain circular surface periodic micro-nano structure geometric shape.
(3), under irradiation parameters, the surface periodic micro-nano structure under linear polarization pulse train (two subpulses, time delay 300fs) effect has been eliminated the anisotropy based on laser polarization state, presents circular geometry form.
(4) at 0.8J/cm 2energy density, pulse recurrence frequency 200Hz, under laser direct-writing speed 100 μ m/s conditions, keep directly writing direction constant, adjust linearly polarized laser polarization direction and laser direct-writing angular separation, the variation from 0 ° to 90 °, obtains the surface periodic micro-nano structure of different live widths.Parallel with laser polarization direction or directly write limit live width when vertical when directly writing direction.Gained live width minimum when directly writing direction and being parallel to laser polarization direction, gained live width maximum while directly writing direction perpendicular to laser polarization direction.
The present invention is not limited to above-mentioned preferred forms; anyone can draw other various forms of products under enlightenment of the present invention; no matter but do any variation in its shape or structure; every have identical with a application or akin technical scheme, within all dropping on protection scope of the present invention.

Claims (4)

1. a method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form, is characterized in that, the method comprises the following steps:
Step 1: open pulse shaper, adjust light path, guarantee that laser incident direction is vertical with processed sample surface;
Step 2: regulate different polarization directions under linear polarization Femtosecond-Laser Pulse Excitation, laser polarization state is regulated and controled simultaneously;
Step 3: the surface periodic structure under linear polarization Femtosecond-Laser Pulse Excitation presents oval geometric shape, the surface periodic micro-nano structure based on pulse train carries out anisotropy elimination; And
Step 4: control laser direct-writing direction and laser rays polarization direction and adjust line width.
2. the method for control femtosecond laser induction crystal silicon according to claim 1 surface micro-nano structure form, is characterized in that: in step 2, the regulate and control method of described laser polarization state comprises the following steps:
(1) regulating impulse energy is 0.8J/cm 2, in light path, add half-wave plate, regulate half-wave plate optical axis and former polarization direction angle to obtain the linear polarization femto-second laser pulse of different directions;
(2) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(3) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting;
(4), under different linearly polarized laser effects, process the surface periodic structure of different geometric shapes in sample surface;
(5) in light path, add quarter-wave plate, regulate 45 ° of wave plate optical axis direction and former laser polarization direction angles to obtain circularly polarized laser; And
(6) repeat (2), (3) process, under circularly polarized laser effect, process the isotropic surface periodic structure of geometric shape in sample surface.
3. the method for control femtosecond laser induction crystal silicon according to claim 1 surface micro-nano structure form, is characterized in that, in described step 3, the described surface periodic micro-nano structure anisotropy removing method based on pulse train comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) adjust laser incident frequency and control the mechanical switch open time, laser pulse is applied to sample surface with the umber of pulse of setting; And
(3) process the isotropic surface periodic structure of geometric shape in sample surface.
4. the method for control femtosecond laser induction crystal silicon according to claim 1 surface micro-nano structure form, it is characterized in that, in described step 4, the processing method that line width is adjusted in described control laser direct-writing direction and laser rays polarization direction comprises the following steps:
(1) open mechanical switch, by imaging video camera, by the two gummed of achromatism planoconvex spotlight, Laser Focusing is arrived to material surface;
(2) laser incident frequency programming Control mobile platform speed are set to control the umber of pulse inciding in sample surface unit are, on sample, process the chain ripple struction perpendicular to laser polarization direction;
(3) in light path, add half-wave plate, adjust the linear polarization of incident laser by half-wave plate optical axis and the angle control of former polarization direction, keep laser scanning direction constant, directly write out different cycles trend on crystal silicon surface, the chain ripple struction of different live widths.
CN201310209667.8A 2013-05-31 2013-05-31 A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form Active CN104209652B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310209667.8A CN104209652B (en) 2013-05-31 2013-05-31 A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310209667.8A CN104209652B (en) 2013-05-31 2013-05-31 A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form

Publications (2)

Publication Number Publication Date
CN104209652A true CN104209652A (en) 2014-12-17
CN104209652B CN104209652B (en) 2016-05-04

Family

ID=52091775

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310209667.8A Active CN104209652B (en) 2013-05-31 2013-05-31 A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form

Country Status (1)

Country Link
CN (1) CN104209652B (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105108342A (en) * 2015-09-18 2015-12-02 南开大学 Method for preparing two-dimensional metallic photonic crystal structure in large area through femtosecond laser direct writing
CN105261671A (en) * 2015-09-08 2016-01-20 苏州华维纳纳米科技有限公司 Method for preparing thin-film antireflection structure employing laser direct writing
CN105537771A (en) * 2016-01-21 2016-05-04 北京理工大学 Surface anisotropic morphology processing method based on electronic dynamic regulation
CN108213718A (en) * 2018-01-05 2018-06-29 北京工业大学 A kind of femtosecond laser regulates and controls GemSbnTekCrystalline state nanostructured geometric shape method
CN109014566A (en) * 2018-10-16 2018-12-18 北京理工大学 A kind of method of simple control laser induced surface periodic structure arragement direction
CN109954987A (en) * 2019-03-26 2019-07-02 清华大学 A method of nanometer blind hole is processed on single-silk surface using femtosecond laser
CN110653485A (en) * 2019-10-16 2020-01-07 东南大学 Cross-scale three-dimensional laser direct-writing processing device
CN112059412A (en) * 2020-07-30 2020-12-11 华东师范大学 Laser-induced free-form surface periodic nanostructure pattern and coloring method

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6945078B2 (en) * 2002-08-27 2005-09-20 Fujikura Ltd. Optical waveguide in the interior of silica glass and method of forming optical waveguide
CN101319347A (en) * 2008-05-20 2008-12-10 上海大学 Method for crystal surface self-organizing growth of fine-nano-structure with femtosecond laser
CN101380693A (en) * 2008-10-14 2009-03-11 南开大学 Micro-nano structure preparation method on metallic material surface using femtosecond laser
CN102096318A (en) * 2011-01-17 2011-06-15 南京航空航天大学 Method for preparing multi-level structural microarray by laser direct-writing technology
CN102259826A (en) * 2011-06-22 2011-11-30 上海电机学院 Method and device for preparing micro nano composite periodic structure by using femtosecond laser beams
CN102351406A (en) * 2011-07-12 2012-02-15 中国科学院上海光学精密机械研究所 Method for directly writing micro mechanical parts inside glass by femto-second laser
CN102621823A (en) * 2012-04-17 2012-08-01 中国科学院上海光学精密机械研究所 Multi-beam parallel laser direct writing device and method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6945078B2 (en) * 2002-08-27 2005-09-20 Fujikura Ltd. Optical waveguide in the interior of silica glass and method of forming optical waveguide
CN101319347A (en) * 2008-05-20 2008-12-10 上海大学 Method for crystal surface self-organizing growth of fine-nano-structure with femtosecond laser
CN101380693A (en) * 2008-10-14 2009-03-11 南开大学 Micro-nano structure preparation method on metallic material surface using femtosecond laser
CN102096318A (en) * 2011-01-17 2011-06-15 南京航空航天大学 Method for preparing multi-level structural microarray by laser direct-writing technology
CN102259826A (en) * 2011-06-22 2011-11-30 上海电机学院 Method and device for preparing micro nano composite periodic structure by using femtosecond laser beams
CN102351406A (en) * 2011-07-12 2012-02-15 中国科学院上海光学精密机械研究所 Method for directly writing micro mechanical parts inside glass by femto-second laser
CN102621823A (en) * 2012-04-17 2012-08-01 中国科学院上海光学精密机械研究所 Multi-beam parallel laser direct writing device and method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261671A (en) * 2015-09-08 2016-01-20 苏州华维纳纳米科技有限公司 Method for preparing thin-film antireflection structure employing laser direct writing
CN105261671B (en) * 2015-09-08 2017-12-19 苏州华维纳纳米科技有限公司 A kind of method that film drop antistructure is prepared using laser direct-writing
CN105108342A (en) * 2015-09-18 2015-12-02 南开大学 Method for preparing two-dimensional metallic photonic crystal structure in large area through femtosecond laser direct writing
CN105537771A (en) * 2016-01-21 2016-05-04 北京理工大学 Surface anisotropic morphology processing method based on electronic dynamic regulation
CN108213718A (en) * 2018-01-05 2018-06-29 北京工业大学 A kind of femtosecond laser regulates and controls GemSbnTekCrystalline state nanostructured geometric shape method
CN108213718B (en) * 2018-01-05 2019-10-29 北京工业大学 A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method
CN109014566A (en) * 2018-10-16 2018-12-18 北京理工大学 A kind of method of simple control laser induced surface periodic structure arragement direction
CN109014566B (en) * 2018-10-16 2021-04-06 北京理工大学 Method for simply controlling arrangement direction of laser-induced surface periodic structure
CN109954987A (en) * 2019-03-26 2019-07-02 清华大学 A method of nanometer blind hole is processed on single-silk surface using femtosecond laser
CN110653485A (en) * 2019-10-16 2020-01-07 东南大学 Cross-scale three-dimensional laser direct-writing processing device
CN112059412A (en) * 2020-07-30 2020-12-11 华东师范大学 Laser-induced free-form surface periodic nanostructure pattern and coloring method

Also Published As

Publication number Publication date
CN104209652B (en) 2016-05-04

Similar Documents

Publication Publication Date Title
CN104209652B (en) A kind of method of controlling femtosecond laser induction crystal silicon surface micro-nano structure form
CN103658993B (en) Crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control
CN103862171B (en) Dual wavelength femtosecond laser prepares the method for two-dimension periodic metallic particles array structure
CN103071930B (en) System and method for preparing micro-pore array through femtosecond laser direct writing
CN105108342B (en) Method for preparing two-dimensional metallic photonic crystal structure in large area through femtosecond laser direct writing
CN103433618B (en) A kind of method for controlling metal surface micro-nanostructure size and distribution
CN105458529A (en) Method for efficiently making large-depth-diameter-ratio micropore arrays
CN103934576A (en) Method for inducting two-dimensional periodic structure on surface of material through femtosecond laser
CN203557008U (en) Material surface laser blackening or coloring processing system
CN102621823A (en) Multi-beam parallel laser direct writing device and method
CN103706955A (en) Method for preparing high depth-diameter-ratio three-dimensional micro-channel through electronic dynamic control
CN104625417B (en) The method of optimal control nickel surface pattern based on dynamic control
CN103639601B (en) Three-dimensional periodic structure processing method based on electronic dynamic control
CN108213718B (en) A kind of femtosecond laser regulation GemSbnTekCrystalline state nanostructure geometric shape method
CN104625416A (en) Method for electronic dynamic control of crystal silicon surface periodic micro-nano structures based on square hole assistance
CN104625438A (en) Method for manufacturing micro channel by combining laser polarization selective ablation with acid etching
CN104090386A (en) Method for regulating light field polarization state distribution
CN102909477A (en) Method and device for preparing large area of micro gratings on surface of target material by utilizing ultra-fast laser
CN106744662A (en) A kind of method that utilization dynamic control prepares silicon nanowire structure
CN114509836B (en) Preparation method and preparation system of orthogonal grating type micro-nano structure
CN100495081C (en) Device and method for preparing nanometer optical grating
CN102248284B (en) High-speed optical grating direct-writing device
CN105537771A (en) Surface anisotropic morphology processing method based on electronic dynamic regulation
CN103848392B (en) The manufacture method of the black silicon of large area that a kind of micro structure cycle is controlled
CN104900487A (en) Method and apparatus for preparing black silica by adopting lattice scanning

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20180920

Address after: 610061 13, 15 building, 2 new sunshine industry, 55 Qinghe and Linan section, Jinjiang District, Chengdu, Sichuan

Patentee after: Jiang Qi

Address before: 215028 A104 East, 258 Ren Yan Road, Suzhou Industrial Park, Jiangsu.

Patentee before: EPHOTON CO., LTD.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190726

Address after: 610061 1518, 15th Building, No. 55, Qinghe Linan Section, Jinjiang District, Chengdu City, Sichuan Province

Patentee after: Chengdu Xinruide Technology Co., Ltd.

Address before: 610061 No. 55, Qinghe-Linan Section, Jinjiang District, Chengdu City, Sichuan Province

Patentee before: Jiang Qi

TR01 Transfer of patent right