CN100495081C - Device and method for preparing nanometer optical grating - Google Patents
Device and method for preparing nanometer optical grating Download PDFInfo
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- CN100495081C CN100495081C CNB2005101100544A CN200510110054A CN100495081C CN 100495081 C CN100495081 C CN 100495081C CN B2005101100544 A CNB2005101100544 A CN B2005101100544A CN 200510110054 A CN200510110054 A CN 200510110054A CN 100495081 C CN100495081 C CN 100495081C
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Abstract
This invention relates to a device and a method for preparing nm gratings including: utilizing the KDP crystal to multiply a beam laser to form two vertical beams of laser on the polarization direction to focus them on the material surface by commonpath to form a periodic nm grating. The energy of the multiple frequency light is adjusted to change the direction of the grating. A device for preparing nm grating includes: a femtosecond laser, a Glan prism, a KDP crystal and a focus lens on the optical axis outputting femtosecond laser pulse along said femtosecond laser, said Glan prism and the KDP crystal have an adjusting structure rotating around the optical axis.
Description
Technical field
The present invention relates to the induced with laser nanostructured, particularly a kind of apparatus and method that prepare nanometer grating are that a kind of two ultra-short pulse lasers that adopts in air is total to the road vertical irradiation forms the cycle nanostructured at material surface job operation.This method is applicable to the periodic structure of inducing rule at semiconductor, transparent medium block and film surface, preparation nanometer scale grating.
Background technology
Ultra-short pulse laser processing is a kind of very promising materials processing means.Ultrashort pulse can be assembled very high energy in the part, produces very little thermal effect simultaneously, is very beneficial for the retrofit of material, and is especially suitable for some hard processing crisp and resistant material.
In the prior art, people mainly adopt the holographic method etched diffraction grating at present.People form interference with the laser of two bundle same frequencys, skewed crossing, etch cycle stability at material surface, the grating of tactical rule.(referring to document: Y.Li, W.Watanabe, et.al., Applied Physics Letters, Vol.80, P1508,2002; S.Qu, J.Qiu, et.at., Applied Physics Letters, Vol.84, P2046,2004).They have prepared grating at glass surface and inside respectively in this way.The grating line spacing that obtains is bigger, is about 1 μ m, and the cutting width changes with incident laser energy, is about 300～500nm.Adopt the available minimum light grid cycle of holographic method to level off to λ/2 in theory.
People adopt the another kind of new method for preparing nano periodic structure (referring to document: N.Yasumaru, K.Miyazaki, J.Kiuchi, Applied Physics A, Vol.76, P983,2003) recently.Adopt single bunch polarization femtosecond laser to induce quasi-periodic nanostructured in semiconductor, transparent material, it has only 1/5～1/10 of irradiating laser wavelength.This quasi-periodic structure often appears at the edge of rhegmalypt.At document (Y.Shimotsuma, P.G.Kazansky, et.al., Physical Review Letters, Vol.91, P 247405,2003) in, people adopt microcobjective, single bundle 800nm femtosecond laser is focused on glass inside, induce the nanostructured of about 140nm～320nm of cycle at the area of diameter 1 μ m, the about 20nm of cutting width, but the groove of grating exists some irregular grooves to intersect.Fig. 1 utilizes the scanning electron microscope backward scattering figure of this method at the inner optical grating construction that produces of glass.
Summary of the invention
The technical problem to be solved in the present invention is to overcome above-mentioned the deficiencies in the prior art, a kind of apparatus and method that prepare nanometer grating are provided, and device of the present invention should be simple in structure easy with the preparation method, can obtain the grating line rule, area of raster is bigger, the technique effect that grating orientation is controlled.
Basic design of the present invention is: in the air, utilize the KDP crystal with the beam of laser frequency multiplication, form the orthogonal two bundle laser in polarization direction.This two bundles laser is total to light path focuses on material surface, because the interference effect of frequency doubled light electric field forms the cycle nanometer grating on material.By regulating the energy of frequency doubled light, can change the direction of optical grating construction.
The concrete technical solution of the present invention is as follows: a kind of device for preparing nanometer grating, it is characterized in that this device comprises a femto-second laser, and be that Glan prism, KDP crystal and condenser lens constitute successively on the optical axis by the femto-second laser pulse of exporting along this femto-second laser, described Glan prism and KDP crystal have the governor motion that rotates around optical axis, adjusting described Glan prism (2) and KDP crystal (3), form light path altogether and orthogonal fundamental frequency light in polarization direction and frequency doubled light.Described femto-second laser is a titanium-doped sapphire laser.
Utilize the device of above-mentioned preparation nanometer grating to prepare the method for nanometer grating, comprise the following steps:
1. set up the device of a described preparation nanometer grating of claim 1, the preparation sample;
2. adjust the Glan prism and the KDP crystal of described device, form the fundamental frequency light and the frequency doubled light of light path altogether, the polarization direction of frequency doubled light is vertical mutually with fundamental frequency polarisation of light direction, described sample is placed the focal plane of condenser lens;
3. between KDP crystal and condenser lens, put one to 400nm wavelength light height on the contrary to the high saturating catoptron of 800nm wavelength light, respectively with the monitoring of two energy meter probes, regulate laser instrument, Glan prism and KDP crystal simultaneously, make the energy of 400nm wavelength light and 800nm wavelength light reach required ratio;
4. withdraw described catoptron, the laser focusing vertical irradiation promptly forms nanometer grating on the surface of sample on the surface of sample.
We know that grating periods lambda and laser wavelength lambda are proportional, can be expressed as:
Λ＝λ/2n (1)
Wherein λ/2 are incident frequency doubled light wavelength, and n is illustrated in material under the excited state for the refractive index of frequency doubled light.Its principle of work is:
We know the real part ε of sample specific inductive capacity
1With imaginary part ε
2With the pass of sample refractive index n and extinction coefficient k be:
ε
1＝n
2-k
2 (2)
ε
2＝2nk
The change amount of specific inductive capacity and the pass of conduction band electron number density are:
Here ε
gSpecific inductive capacity when the expression material does not excite to frequency doubled light, Δ E
gMaterial band system changes N under the expression laser action
0Be valence band electron number density, n
eBe the number density of excited state electronics, e is an electron charge, m
*Be the effective mass of electronics, m
eBe free electron quality, τ
DBe the time constant of electronics-electronics, the collision of electronics one lattice point, ε
0Be permittivity of vacuum, ω is the angular frequency of frequency doubled light.
Along with excited state electron number density n
eIncrease, refractive index n diminishes, the cycle of optical grating construction becomes big slightly.Referring to document A.Borowiec and H.K.Haugen, Applied Physics Letters, Vol.82, P4462,2003 and M.Ivanov and P.Rochon, Applied Physics Letters, Vol.84, P 4511,2004.
When laser and material effects, synthesize the common direction of determining optical grating construction owing to the incident frequency doubled light with by the electric field intensity that fundamental frequency light and material effects produce.When incident frequency doubled light energy is very low, the approximate fundamental frequency light polarization direction that is parallel to of optical grating construction; Along with the incident frequency doubled light strengthens, grating orientation is gradually to the deflection of frequency doubled light polarization direction, until parallel.
Prepare grating technology with existing monopulse laser and compare, advantage of the present invention is:
1, adopt ordinary lens to focus on, the area of raster that obtains (diameter 10 μ m) has bigger using value much larger than the grating that obtains (diameter 1 μ m) that focuses on by microcobjective.
2, road method of double pulse measurement manufacturing cycle nanostructured altogether of the present invention is to adopt the two bundles ultra-short pulse laser on road altogether, the double-frequency laser energy increases to 1.1 μ J from 0.5 μ J, still can form stable cycle nanometer grating structure, and can in focal spot, not be formed centrally rhegmalypt in whole laser radiation zone.Single pulse energy is easy to form rhegmalypt in the laser radiation zone a little more than ablation threshold.
3, adopt the inventive method can manufacturing cycle little (about 180nm), the optical grating construction of cutting meticulous (about 20nm), and also optical grating construction is more regular.
4, adopt the inventive method to change the direction of optical grating construction by regulating the energy relationship of two-beam.This in actual applications can be highly significant.
5, this method is that effectively we have obtained good result to adopt this method.
Owing to obtain the grating cycle in micron dimension with holography method, by comparison, adopt our method acquisition grating cycle littler, less than 200nm.
Description of drawings
Fig. 1 is that existing employing microcobjective focuses on the scanning electron microscope backward scattering figure of monopulse laser at the inner optical grating construction that produces of glass.
Fig. 2 is apparatus of the present invention light path synoptic diagram.
Fig. 3 is the sem photograph that 800nm and 400nm femtosecond laser are total to dipulse irradiation back, road ZnSe plane of crystal.Solid arrow and dotted arrow are represented the polarization direction of 800nm and 400nm laser respectively.(b) be the enlarged drawing of square frame part in (a).
Fig. 4 is the rotation synoptic diagram that grating orientation changes along with 400nm and 800nm laser energy.
Embodiment
See also Fig. 2 earlier, Fig. 2 is apparatus of the present invention light path synoptic diagram.As seen from the figure, the present invention prepares the device of nanometer grating, this device comprises a femto-second laser 1, and be that Glan prism 2, KDP crystal 3 and condenser lens 4 constitute successively on the optical axis by the femto-second laser pulse of exporting along this femto-second laser 1, described Glan prism 2 and KDP crystal 3 have the governor motion that rotates around optical axis.Described femto-second laser 1 is a titanium-doped sapphire laser.
The device that utilizes the present invention to prepare nanometer grating prepares the method for nanometer grating, comprises the following steps:
1. set up the device of a described preparation nanometer grating of claim 1, preparation sample 5;
2. adjust the Glan prism 2 and the KDP crystal 3 of described device, form the fundamental frequency light and the frequency doubled light of light path altogether, the polarization direction of frequency doubled light is vertical mutually with fundamental frequency polarisation of light direction, described sample 5 is placed the focal plane of condenser lens 4;
3. between KDP crystal 3 and condenser lens 4, put one to 400nm wavelength light height on the contrary to the high saturating catoptron of 800nm wavelength light, respectively with the monitoring of two energy meter probes, regulate laser instrument 1, Glan prism 2 and KDP crystal 3 simultaneously, make the energy of 400nm wavelength light and 800nm wavelength light reach required ratio;
4. withdraw described catoptron, the laser focusing vertical irradiation promptly forms nanometer grating on the surface of sample 5 on the surface of sample 5.
Utilize the process of the preparation nanometer grating of apparatus of the present invention, it is as follows to remark additionally for example again:
The fundamental frequency light of titanium-doped sapphire laser 1 emission 800nm, 130fs, described sample is the ZnSe crystal, and the fundamental frequency light of a branch of 800nm, 130fs (P polarization direction) vertically is divided into the P polarized light of 800nm and the S polarized light of 400nm through Glan prism 2 and KDP crystal 3.Two-beam light path altogether is vertical confocal in the surface of ZnSe sample 5 through condenser lens 4 (f=150mm).Sample 5 surfaces are＜100〉direction, through polishing.For determining to shine sample 5 surfaces two bundle laser energies, we place in frequency-doubling crystal 3 back one to wavelength 400nm height on the contrary to the high saturating catoptron of 800nm, respectively with the monitoring of two energy meter probes, regulate laser energy by rotation Glan prism 2 and KDP crystal 3, make the energy of 800nm laser be fixed in 1.9 μ J, and the energy of 400nm laser change to 1.1 μ J from 0.5 μ J.Laser instrument 1 adopts 1Hz, monopulse radiation.Its result as shown in Figure 3.Among the figure: laser energy is 400nm (0.5 μ J)+800nm (1.9 μ J).Fig. 3 (b) is the partial enlarged drawing of square frame among Fig. 3 (a).Solid arrow and dotted arrow are represented the polarization direction of 800nm and 400nm laser respectively.From figure through observing and test shows: in whole laser radiation zone, ZnSe surface, rhegmalypt do not occur, formed a complete nanometer grating, the optical grating construction cycle is approximately 180nm.The structure comparison rule of grating does not have tangible groove crossover phenomenon.Groove is also very thin, has only 10-20nm.
Fig. 4 changes the synoptic diagram of rotation change along with 400nm and 800nm laser energy ratio for grating orientation.Wherein scheme (a) 400nm (0.5 μ J)+800nm (1.9 μ J);
Figure (b) 400nm (1.0 μ J)+800nm (1.9 μ J);
Figure (c) 400nm (1.1 μ J)+800nm (1.9 μ J).
Show: we can be by regulating the direction of 400nm luminous energy change optical grating construction.Promptly along with the increase of 400nm laser energy, the direction of optical grating construction tends to 400nm polarisation of light direction.
For the 400nm laser of frequency multiplication, the refractive index when the ZnSe crystal does not excite is 2.9, and other parameter is: ε
0=847, m
*=0.17, N
0=2.19 * 10
22Cm
-3, τ
D=1fs.Work as n
eReach plasma critical density 1.5 * 10
21Cm
-3The time, according to formula (2,3), the ZnSe refractive index descends 10%.According to formula (1), the long λ=800nm of fundamental light wave, periods lambda=154nm.The cycle of the optical grating construction that this and the inventive method prepare meets finely.
Utilize the present invention, formed stable cycle nanometer grating structure in whole laser radiation zone,, can change the direction of optical grating construction by regulating the energy of frequency doubled light.Equally, we utilize the present invention, adopt 800nm and 400nm femtosecond laser radiation SiC surface, have also prepared the nanometer grating structure of cycle 170nm and 90nm.This method can also be applied to the preparation of the nano periodic structure on semiconductor, medium block and the film.
Claims (3)
1, a kind of device for preparing nanometer grating, it is characterized in that this device comprises a femto-second laser (1), and be that Glan prism (2), KDP crystal (3) and condenser lens (4) constitute successively on the optical axis by the femto-second laser pulse of exporting along this femto-second laser (1), described Glan prism (2) and KDP crystal (3) have the governor motion that rotates around optical axis, adjusting described Glan prism (2) and KDP crystal (3), form light path altogether and orthogonal fundamental frequency light in polarization direction and frequency doubled light.
2, the device of preparation nanometer grating according to claim 1 is characterized in that described femto-second laser (1) is a titanium-doped sapphire laser.
3, utilize the device of the described preparation nanometer grating of claim 1 to prepare the method for nanometer grating, it is characterized in that comprising the following steps:
1. set up the device of a described preparation nanometer grating of claim 1, preparation sample (5);
2. adjust the Glan prism (2) and the KDP crystal (3) of described device, form the fundamental frequency light and the frequency doubled light of light path altogether, the polarization direction of frequency doubled light is vertical mutually with fundamental frequency polarisation of light direction, described sample (5) is placed the focal plane of condenser lens (4);
3. between KDP crystal (3) and condenser lens (4), put one to 400nm wavelength light height on the contrary to the high saturating catoptron of 800nm wavelength light, respectively with the monitoring of two energy meter probes, regulate laser instrument (1), Glan prism (2) and KDP crystal (3) simultaneously, make the energy of 400nm wavelength light and 800nm wavelength light reach required ratio;
4. withdraw described catoptron, the laser focusing vertical irradiation promptly forms nanometer grating on the surface of sample (5) on the surface of sample (5).
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| GB2439962B (en) * | 2006-06-14 | 2008-09-24 | Exitech Ltd | Process and apparatus for laser scribing |
| CN102259826A (en) * | 2011-06-22 | 2011-11-30 | 上海电机学院 | Method and device for preparing micro nano composite periodic structure by using femtosecond laser beams |
| CN102909477A (en) * | 2012-10-31 | 2013-02-06 | 北京工业大学 | Method and device for preparing large area of micro gratings on surface of target material by utilizing ultra-fast laser |
| CN104625420B (en) * | 2014-12-29 | 2016-11-30 | 中自高科（苏州）光电有限公司 | A kind of processing unit (plant) of the antivacuum high conductivity metal nano wire without mask |
| CN110361797A (en) * | 2018-03-28 | 2019-10-22 | 福州高意光学有限公司 | A kind of manufacturing method changing laser intensity distribution diaphragm |
| CN111790980B (en) * | 2020-06-28 | 2021-10-08 | 华中科技大学 | Method, system and application for regulating and controlling three-dimensional direction of optical axis of nano grating |
| CN112792451A (en) * | 2020-12-31 | 2021-05-14 | 吉林大学 | Method for preparing geometric phase optical element in sapphire by using femtosecond laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1448733A (en) * | 2003-04-11 | 2003-10-15 | 中国科学院上海光学精密机械研究所 | Process for the manufacture of precious metal nanometer micro-structure grating |
| WO2003091774A1 (en) * | 2002-04-26 | 2003-11-06 | Japan Science And Technology Corporation | Fiber grating and method for making the same |
| CN1474202A (en) * | 2003-08-08 | 2004-02-11 | 中国科学院上海光学精密机械研究所 | Working device for forming two-dimension nano size periodic structure by fs laser single pulse |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2003091774A1 (en) * | 2002-04-26 | 2003-11-06 | Japan Science And Technology Corporation | Fiber grating and method for making the same |
| CN1448733A (en) * | 2003-04-11 | 2003-10-15 | 中国科学院上海光学精密机械研究所 | Process for the manufacture of precious metal nanometer micro-structure grating |
| CN1474202A (en) * | 2003-08-08 | 2004-02-11 | 中国科学院上海光学精密机械研究所 | Working device for forming two-dimension nano size periodic structure by fs laser single pulse |
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