CN109926712A - A kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure - Google Patents

A kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure Download PDF

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CN109926712A
CN109926712A CN201910323352.3A CN201910323352A CN109926712A CN 109926712 A CN109926712 A CN 109926712A CN 201910323352 A CN201910323352 A CN 201910323352A CN 109926712 A CN109926712 A CN 109926712A
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wave plate
light beam
transmitted light
reflecting mirror
sample
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贾鑫
贾天卿
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Shanghai Dianji University
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Shanghai Dianji University
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Abstract

The invention discloses a kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure, wherein, device includes light source, electronic shutter, half-wave plate, Glan prism, beam splitting chip, reflecting mirror, delay light path system, quarter-wave plate, convergent lens and sample;The femto-second laser pulse that light source generates is divided into transmitted light beam and the reflected beams by beam splitting chip, and the end of transmitted light beam and the reflected beams is arranged in sample, and transmitted light beam and the reflected beams are confocal on sample.The present invention is by adjusting delay light path system, so that transmitted light beam and the reflected beams reach sample, and the manufacturing cycle nanostructure on sample simultaneously.

Description

A kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure
Technical field
The present invention relates to femtosecond laser micro-nano technology fields, are a kind of dresses of conveniently and efficiently manufacturing cycle nanostructure It sets and method, is primarily adapted for use in laser nano processing, material modification etc..
Background technique
The preparation of material surface period nanostructure material modification, photonic crystal, in terms of all have it is important Effect.Laser interferometry is due to simple process and low in cost and be widely used.Double laser beams interference Light and dark striped is generated, by the series of process such as expose, develop, the light intensity style that interference is generated is marked in photosensitive material On material, to prepare the periodic structure of rule.One-dimensional grating structure can be prepared using two-beam interference, or passes through multiple exposure Preparation two dimension, three-dimensional periodic structure.
Femto-second laser pulse has the characteristics that ultrashort, superpower, generates during with matter interaction many unusual The phenomenon that.After femtosecond laser irradiates the materials such as metal, semiconductor and dielectric, can induction duration nanostructure, nanostructure Size is much smaller than optical maser wavelength.This breaches the diffraction limit of laser processing, brilliant in laser nano processing, visible light wave range photon Body preparation and ultra-density optical storage etc. have application potential.Meanwhile laser polarization state determines nanostructure shape, Linearly polarized light induces the nanometer striped perpendicular to polarization direction, and circularly polarized light induces nano particle.
The periodic structure style of existing double laser beams interference technique preparation is only decided by the light distribution of laser interference, together The light intensity for polarizing two-beam interference field is in light and dark raster-like periodic distribution, is usually used in preparing one-dimensional grating structure, is managed By period minimum λ/2, it is more difficult to the preparation applied to nanostructure.By interference theory it is found that the dual-beam of cross-polarization not phase It is dry, the optical power detection in interference field, to may not apply to the preparation of periodic structure.
Summary of the invention
Style is dull in conventional laser two-beam interference technology in order to make up by the present invention, lacks the deficiency of flexibility, provides A kind of method of femtosecond laser two-beam interference manufacturing cycle nanostructure.It is total to light distribution and polarisation distribution in interference field With the formation for determining period nanostructure, different types of period nanostructure is conveniently and efficiently prepared.This method improves The diversity of original two-beam interference technology provides new means for laser nano processing, material modification etc..
Technical problem solved by the invention can be realized using following technical scheme:
A kind of device of femtosecond laser two-beam interference manufacturing cycle nanostructure, including
Light source is used to generate femto-second laser pulse;
Electronic shutter, the first half-wave plate and Glan prism, are successively set in the optical path of light source, and the first half-wave plate is used for The energy of femto-second laser pulse is adjusted, Glan prism is used to adjust the polarization direction of femto-second laser pulse;
The end of Glan prism is arranged in beam splitting chip, for femto-second laser pulse to be divided into transmitted light beam and reflected light Beam;
The first reflecting mirror is equipped in the optical path of transmitted light beam, the first reflecting mirror is used to transmitted light beam reflexing to delay light Road system is equipped with the second reflecting mirror in the end of delay light path system, is disposed on the reflected light path of the second reflecting mirror Second half-wave plate, the first quarter-wave plate and the first plus lens;
It is equipped with third reflecting mirror in the optical path of the reflected beams, the 4th reflection is equipped on the reflected light path of third reflecting mirror Mirror is equipped with the 5th reflecting mirror on the reflected light path of the 4th reflecting mirror, and the is successively arranged on the reflected light path of the 5th reflecting mirror Three half-wave plates, the second quarter-wave plate and the first plus lens;
The end of transmitted light beam and the reflected beams is arranged in sample, and transmitted light beam and the reflected beams are confocal on sample.
Further, the ratio between the transmitted light beam and the energy of the reflected beams are 1:1.
Further, the delay light path system includes several reflecting mirrors, and transmitted light beam after all reflecting mirrors by via reaching To the second reflecting mirror.
A kind of technique of femtosecond laser two-beam interference manufacturing cycle nanostructure, includes the following steps:
Glan prism is adjusted, determines the polarization direction of femto-second laser pulse;The first half-wave plate is rotated, so that femtosecond laser arteries and veins Below the energy attenuation of punching to the damage threshold of sample;
It measures transmitted light beam and the reflected beams reaches the time difference of sample, delay light path system is adjusted, so that transmitted light beam Sample, and the manufacturing cycle nanostructure on sample are reached simultaneously with the reflected beams.
Further, changed by adjusting the second half-wave plate and the first quarter-wave plate transmitted light beam polarization direction, Change the polarization direction of the reflected beams by adjusting third half-wave plate and the second quarter-wave plate, to obtain several transmitted light The polarization combination of beam and the reflected beams, every kind of polarization combination have corresponding distribution of interference intensity and polarisation distribution.
Further, the polarization combination of the transmitted light beam and the reflected beams includes linearly polarized light in the same direction, circular polarization in the same direction Light, the combination of orhtogonal linear polarizaiton light orthogonal circular polarizations light.
Further, the sample is metal, semiconductor or dielectric.
Compared with prior art, the beneficial effects of the present invention are:
Femtosecond laser two-beam interference is combined with femtosecond laser induction short cycle nanostructure, light in two-beam interference field It is in by force light and dark raster-like periodic distribution, determines the formation of micron optical grating construction;Since femtosecond laser irradiates, in light Induced with laser short cycle nanostructure is also embedded in grid structure.
Meanwhile the double laser beams of cross-polarization are irrelevant, optical power detection in interference field, and polarize and produce the period The variation of property.Since the nanostructure of femtosecond laser induction is related with laser polarization, it can be convenient and quickly prepare interference light The period nanostructure that strong distribution is codetermined with polarisation distribution.
Micron-nanometer compounding period can be prepared on different materials surface using the solution of the present invention, increase interference The diversity of technology.
Detailed description of the invention
Fig. 1 is the schematic diagram of the device of femtosecond laser two-beam interference manufacturing cycle nanostructure of the present invention.
Fig. 2 is the schematic diagram that the present invention is the embodiment of the present invention.
Specific embodiment
To be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, below with reference to Specific embodiment, the present invention is further explained.
Referring to Fig. 1, a kind of device of femtosecond laser two-beam interference manufacturing cycle nanostructure of the present invention, including
Light source (1), is used to generate femto-second laser pulse;
Electronic shutter (2), the first half-wave plate (3) and Glan prism (4), are successively set in the optical path of light source (1), the Half of wave plate (3) is used to adjust the energy of femto-second laser pulse, and Glan prism (4) is used to adjust the polarization side of femto-second laser pulse To;
Beam splitting chip (5) is arranged in the end of Glan prism (4), for femto-second laser pulse to be divided into transmitted light beam (A) With the reflected beams (B);
The first reflecting mirror (6) are equipped in the optical path of transmitted light beam (A), the first reflecting mirror (6) is used for transmitted light beam (A) Delay light path system (7) is reflexed to, the second reflecting mirror (8) are equipped in the end of delay light path system (7), in the second reflecting mirror (8) the second half-wave plate (9), the first quarter-wave plate (10) and the first plus lens are disposed on reflected light path (11);
Third reflecting mirror (12) are equipped in the optical path of the reflected beams (B), on the reflected light path of third reflecting mirror (12) Equipped with the 4th reflecting mirror (13), the 5th reflecting mirror (14) is equipped on the reflected light path of the 4th reflecting mirror (13), in the 5th reflection Third half-wave plate (15), the second quarter-wave plate (16) and the first plus lens are successively arranged on the reflected light path of mirror (14) (17);
Sample (18) is arranged in the end of transmitted light beam (A) and the reflected beams (B), transmitted light beam (A) and the reflected beams (B) It is confocal on sample (18).
The ratio between energy of the transmitted light beam (A) and the reflected beams (B) is 1:1.
The delay light path system (7) includes several reflecting mirrors, and transmitted light beam (A) is by via reaching after all reflecting mirrors Two-mirror (8).
A kind of technique of femtosecond laser two-beam interference manufacturing cycle nanostructure, includes the following steps:
1) Glan prism (4) are adjusted, determines the polarization direction of femto-second laser pulse;The first half-wave plate (3) are rotated, so that flying Below the energy attenuation to the damage threshold of sample of second laser pulse;
2) it measures transmitted light beam (A) and the reflected beams (B) reaches the time difference of sample (18), adjust delay light path system (7), so that transmitted light beam (A) and the reflected beams (B) reach sample (18) simultaneously, and the manufacturing cycle nano junction on sample (18) Structure.
The present invention can change transmitted light beam (A) by adjusting the second half-wave plate (9) and the first quarter-wave plate (10) Polarization direction changes the polarization side of the reflected beams (B) by adjusting third half-wave plate (15) and the second quarter-wave plate (16) To obtain the polarization combination of several transmitted light beam (A) and the reflected beams (B), every kind of polarization combination has corresponding interference Light distribution and polarisation distribution.
The polarization combination of the transmitted light beam (A) and the reflected beams (B) include linearly polarized light in the same direction, circularly polarized light in the same direction, The combination of orhtogonal linear polarizaiton light orthogonal circular polarizations light.
The sample (18) is metal, semiconductor or dielectric.
In four embodiments below, using wavelength 800nm, pulsewidth 40fs, the titanium-doped sapphire of repetition rate 1kHz flies Second laser pulse irradiating sample, sample is ZnO crystal.
Embodiment 1
It rotates the second half-wave plate (9) and the first quarter-wave plate (10) adjusts the polarization direction of transmitted light beam (A), rotation Third half-wave plate (15) and the second quarter-wave plate (16) adjust the polarization direction of the reflected beams (B), make transmitted light beam (A) and The reflected beams (B) Cheng Tongxiang linearly polarized light (as shown in illustration in Fig. 2 (a)), Fig. 2 (a) is shown to fly under isogonic line polarization combination The scanning electron microscope diagram of second double laser beams interference ablation spot.Sample surfaces show the grating ablation knot of period arrangement Structure, this is determined by the light intensity periodic distribution of two-beam interference.Short-period nanometer of striped is embedded in optical grating construction, Fringe period is about 210nm, and striped arrangement direction is vertical with laser polarization direction.
Embodiment 2
Adjust transmitted light beam (A) and the reflected beams (B) Cheng Tongxiang circularly polarized light (as shown in illustration in Fig. 2 (b)), Fig. 2 (b) Show that the scanning electron microscope diagram of lower femtosecond laser two-beam interference ablation spot is combined in circular polarization in the same direction.Sample surfaces are presented The grating ablation structure of period arrangement out, this is determined by the light intensity period profile of two-beam interference.It is embedding in optical grating construction Entering has short-period nano particle, and grain diameter is 200~400nm, and nano particle is to be induced to generate by circular polarization femtosecond laser.
Embodiment 3
Transmitted light beam (A) and the reflected beams (B) are orthogonal linearly polarized light (as shown in illustration in Fig. 2 (c)), Fig. 2 (c) display Orhtogonal linear polarizaiton combines the scanning electron microscope diagram of lower femtosecond laser two-beam interference ablation spot.Double light of orhtogonal linear polarizaiton There is uniform ablation spot in beam interferometer field optical power detection, sample surfaces.Occurs raster-like periodic arrangement on ablation spot Nanometer striated structure, fringe period is about 210nm, and adjacent two column stripe direction is mutually perpendicular to, this is double by orhtogonal linear polarizaiton Caused by the polarization periodic distribution of beam interference field.
Embodiment 4
Transmitted light beam (A) and the reflected beams (B) are orthogonal circularly polarized light (as shown in illustration in Fig. 2 (d)), Fig. 2 (d) display Orthogonal circular polarizations combine the scanning electron microscope diagram of lower femtosecond laser two-beam interference ablation spots.Double light of orthogonal circular polarizations There is uniform ablation spot in beam interferometer field optical power detection, sample surfaces.Occurs the nano strip of periodic arrangement on ablation spot Line structure, the arc-shaped structure of striped, fringe period is about 210nm, this is the polarization week by orthogonal circular polarizations two-beam interference field Caused by phase property is distributed.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its Equivalent thereof.

Claims (7)

1. a kind of device of femtosecond laser two-beam interference manufacturing cycle nanostructure, which is characterized in that including
Light source (1), is used to generate femto-second laser pulse;
Electronic shutter (2), the first half-wave plate (3) and Glan prism (4), are successively set in the optical path of light source (1), and the first half Wave plate (3) is used to adjust the energy of femto-second laser pulse, and Glan prism (4) is used to adjust the polarization direction of femto-second laser pulse;
Beam splitting chip (5), setting is in the end of Glan prism (4), for femto-second laser pulse to be divided into transmitted light beam (A) and instead Irradiating light beam (B);
The first reflecting mirror (6) are equipped in the optical path of transmitted light beam (A), the first reflecting mirror (6) is used to reflect transmitted light beam (A) To delay light path system (7), the second reflecting mirror (8) are equipped in the end of delay light path system (7), in the second reflecting mirror (8) The second half-wave plate (9), the first quarter-wave plate (10) and the first plus lens (11) are disposed on reflected light path;
Third reflecting mirror (12) are equipped in the optical path of the reflected beams (B), are equipped on the reflected light path of third reflecting mirror (12) 4th reflecting mirror (13) is equipped with the 5th reflecting mirror (14), in the 5th reflecting mirror on the reflected light path of the 4th reflecting mirror (13) (14) third half-wave plate (15), the second quarter-wave plate (16) and the first plus lens are successively arranged on reflected light path (17);
Sample (18) is arranged in the end of transmitted light beam (A) and the reflected beams (B), and transmitted light beam (A) and the reflected beams (B) are in sample It is confocal on product (18).
2. the device of femtosecond laser two-beam interference manufacturing cycle nanostructure according to claim 1, it is characterised in that: The ratio between energy of the transmitted light beam (A) and the reflected beams (B) is 1:1.
3. the device of femtosecond laser two-beam interference manufacturing cycle nanostructure according to claim 1, it is characterised in that: The delay light path system (7) includes several reflecting mirrors, and transmitted light beam (A) is by via reaching the second reflecting mirror after all reflecting mirrors (8)。
4. a kind of technique of femtosecond laser two-beam interference manufacturing cycle nanostructure, which comprises the steps of:
1) Glan prism (4) are adjusted, determines the polarization direction of femto-second laser pulse;The first half-wave plate (3) are rotated, so that femtosecond swashs Below the energy attenuation of light pulse to the damage threshold of sample;
2) it measures transmitted light beam (A) and the reflected beams (B) reaches the time difference of sample (18), adjust delay light path system (7), make It obtains transmitted light beam (A) and the reflected beams (B) reaches sample (18) simultaneously, and the manufacturing cycle nanostructure on sample (18).
5. the technique of femtosecond laser two-beam interference manufacturing cycle nanostructure according to claim 1, which is characterized in that Change the polarization direction of transmitted light beam (A) by adjusting the second half-wave plate (9) and the first quarter-wave plate (10), pass through adjusting Third half-wave plate (15) and the second quarter-wave plate (16) change the polarization direction of the reflected beams (B), several to obtain The polarization combination of irradiating light beam (A) and the reflected beams (B), every kind of polarization combination have corresponding distribution of interference intensity and polarization point Cloth.
6. the technique of femtosecond laser two-beam interference manufacturing cycle nanostructure according to claim 5, which is characterized in that The polarization combination of the transmitted light beam (A) and the reflected beams (B) includes that linearly polarized light in the same direction, circularly polarized light in the same direction, cross line are inclined Shake light, the combination of orthogonal circular polarizations light.
7. the technique of femtosecond laser two-beam interference manufacturing cycle nanostructure according to claim 1, which is characterized in that The sample (18) is metal, semiconductor or dielectric.
CN201910323352.3A 2019-04-22 2019-04-22 A kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure Pending CN109926712A (en)

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CN111408856A (en) * 2020-04-15 2020-07-14 华东师范大学重庆研究院 Method and device for manufacturing micro-fluidic chip by femtosecond plasma grating
CN112557363A (en) * 2020-12-07 2021-03-26 山西大学 Single-particle rapid identification device and method based on femtosecond laser modulation phase
CN113805328A (en) * 2021-09-18 2021-12-17 中国科学院西安光学精密机械研究所 Optical system for generating laser array line source with continuously adjustable period and adjusting method thereof
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111408856A (en) * 2020-04-15 2020-07-14 华东师范大学重庆研究院 Method and device for manufacturing micro-fluidic chip by femtosecond plasma grating
CN112557363A (en) * 2020-12-07 2021-03-26 山西大学 Single-particle rapid identification device and method based on femtosecond laser modulation phase
CN112557363B (en) * 2020-12-07 2022-05-31 山西大学 Single-particle rapid identification method based on femtosecond laser modulation phase
FR3124411A1 (en) * 2021-06-28 2022-12-30 Alphanov Apparatus and method for generating a periodic, uniform and regular nanostructured pattern on the surface of a material
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CN113805328A (en) * 2021-09-18 2021-12-17 中国科学院西安光学精密机械研究所 Optical system for generating laser array line source with continuously adjustable period and adjusting method thereof
CN114509836A (en) * 2022-02-25 2022-05-17 中山大学 Preparation method and preparation system of orthogonal grating type micro-nano structure

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Application publication date: 20190625