CN103286453A - System and method for preparing asymmetric micron-nano composite periodic patterns by femtosecond laser beams - Google Patents
System and method for preparing asymmetric micron-nano composite periodic patterns by femtosecond laser beams Download PDFInfo
- Publication number
- CN103286453A CN103286453A CN2013101729207A CN201310172920A CN103286453A CN 103286453 A CN103286453 A CN 103286453A CN 2013101729207 A CN2013101729207 A CN 2013101729207A CN 201310172920 A CN201310172920 A CN 201310172920A CN 103286453 A CN103286453 A CN 103286453A
- Authority
- CN
- China
- Prior art keywords
- wave plate
- light
- light beam
- behind described
- trans
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention provides a system and a method for preparing asymmetric micron-nano composite periodic patterns by femtosecond laser beams. The system comprises a light source generating femtosecond laser beam pulses, an electronic shutter, a first half-wave plate, a first Glan prism, a first beam splitting piece, a first time-delay optical path device, a first full reflector, a second full reflector, a first converging lens, a second half-wave plate, a second beam splitting piece, a second time-delay optical path device, a climb lens, a second converging lens, a first quarter-wave plate, a third full reflector, a fourth full reflector, a fifth full reflector, a third converging lens and a third half-save plate, wherein the second time-delay optical path device, the climb lens, the second converging lens and the first quarter-wave plate are sequentially arranged on an optical path of a reflection light beam of the second beam splitting piece. By the aid of the system and the method, polarization combination of lasers can be flexible designed, the asymmetric micron-nano composite periodic patterns can be prepared conveniently and rapidly, and the defect that a traditional laser interference technology is monotonous in patterns and insufficient in flexibility can be overcome.
Description
Technical field
The present invention relates to the technical field of the little processing of ultrashort pulse and holographic lithography, particularly a kind of femtosecond laser beam prepares the system and method for asymmetric micro-nano compounding period style.
Background technology
Laser interferometry is one of effective means of preparation two dimension, three-dimensional periodic style, has obtained owing to its technology is simple and with low cost using widely.Laser interferometry is multiple laser to be incided the same area with certain included angle be concerned with, with the intensity distributions pattern mint-mark that produces on light-sensitive material, thereby the lattice point structure of manufacturing cycle arrangement.Can prepare the regular two dimension of different cycles, three-dimensional lattice point structure style by the arrangement mode that changes between number of beams and light beam; By the polarization of regulating light beam and the shape that phase place can change each lattice point in the periodic structure.
From beginning in 2002, after femtosecond laser shines some semiconductor, can induce yardstick much smaller than the short period nanostructured of optical maser wavelength at material surface and inside.The laser polarization state has determined the nanostructured shape, in general, and linearly polarized light induced nano striated structure, and stripe direction is vertical with laser polarization direction; Circularly polarized light induced nano grain structure.
Yet the structural cycle of existing laser interferometry preparation is in micron dimension often greater than optical maser wavelength, is difficult for the periodic structure of preparation nanometer scale.Simultaneously, the lattice point position of periodic arrangement is only determined by the intensity distributions style of laser interference.If will obtain the lattice point structure that different cycles is arranged, need rebulid laser interference system to change number of beams and locus.Therefore, the periodic structure style dullness that existing laser interferometry obtains lacks flexibility.
In addition, in the micron-nanometer compounding period structure by femtosecond laser interference technique preparation, the nanometer style on each lattice point has certain symmetry, and this is that polarization style by laser interference determines.This symmetry periodic structure has limited its service orientation, and potential range of application has certain limitation.
Summary of the invention
The object of the present invention is to provide a kind of femtosecond laser beam to prepare the system and method for asymmetric micro-nano compounding period style, can carry out flexible design to the polarization combination of laser, prepare asymmetric micro-nano compounding period style quickly and easily, to remedy style dullness in the conventional laser interference technique, lack the problem of the deficiency of flexibility.
For addressing the above problem, the invention provides the system that a kind of femtosecond laser beam prepares asymmetric micro-nano compounding period style, comprising:
Produce the light source of femto-second laser pulse;
Be set in turn in electronic shutter, first half-wave plate, first Glan prism and first beam splitting chip on the light path of described light source;
Be set in turn in the first time-delay light path device, first on the light path of folded light beam of described first beam splitting chip be all-trans light microscopic, second be all-trans light microscopic, first plus lens and second half-wave plate;
Be arranged at second beam splitting chip on the light path of transmitted light beam of described first beam splitting chip;
Be set in turn in the second time-delay light path device, the mirror of climbing, second plus lens and first quarter-wave plate on the light path of folded light beam of described second beam splitting chip;
Be set in turn in the 3rd on the light path of transmitted light beam of described second beam splitting chip be all-trans light microscopic, the 4th be all-trans light microscopic, the 5th be all-trans light microscopic, the 3rd plus lens and the 3rd half-wave plate.
According to another side of the present invention, provide a kind of femtosecond laser beam that adopts above-mentioned femtosecond laser beam to prepare the system of asymmetric micro-nano compounding period style to prepare the method for asymmetric micro-nano compounding period style, comprising:
Regulate the folding time of electronic shutter with the radiation pulses number of control femto-second laser pulse;
Regulate second light microscopic and the 5th light microscopic that is all-trans that is all-trans, make through the light beam behind described second half-wave plate, coincide with a bit at sample position through the light beam behind described first quarter-wave plate with through the light beam behind described the 3rd half-wave plate, and first angle between any two-beam in three light beams is identical, and the line of the locus of three light beams constitutes equilateral triangle;
Rotating first quarter-wave plate, to make through the light beam behind described first quarter-wave plate be circularly polarized light, rotate second half-wave plate and the 3rd half-wave plate, so that the light beam behind the light beam behind described second half-wave plate of process and described the 3rd half-wave plate of process is linearly polarized light, and the polarization direction of the light beam behind described second half-wave plate of process has the second identical angle with the x axle respectively with the polarization direction through the light beam behind described the 3rd half-wave plate, wherein, described x axle is the line through the locus of the light beam behind the light beam behind described second half-wave plate and described the 3rd half-wave plate of process;
Place bbo crystal at described sample position, rotate the energy that first half-wave plate makes femto-second laser pulse and be decreased to below the damage threshold of described bbo crystal, regulate the first time-delay light path device and the second time-delay light path device and make through the light beam behind described second half-wave plate, arrive described sample position simultaneously through the light beam behind described first quarter-wave plate with through the light beam behind described the 3rd half-wave plate;
The bbo crystal of described sample position is replaced by semi-conducting material, by, regulate first Glan prism to determine the light beam polarization direction of main optical path, rotate first half-wave plate to regulate the pulse energy of main optical path, and rotate second half-wave plate and the 3rd half-wave plate, with regulate through the polarization direction of the light beam behind described second half-wave plate with through the polarization direction of the light beam behind described the 3rd half-wave plate respectively with the size of the second identical angle of x axle, with at the various asymmetric micro-nano compounding period styles of described semi-conducting material preparation.
Compared with prior art, the present invention passes through to regulate the folding time of electronic shutter with the radiation pulses number of control femto-second laser pulse; Regulate second light microscopic and the 5th light microscopic that is all-trans that is all-trans, make through the light beam behind described second half-wave plate, coincide with a bit at sample position through the light beam behind described first quarter-wave plate with through the light beam behind described the 3rd half-wave plate, and first angle between any two-beam in three light beams is identical, and the line of the locus of three light beams constitutes equilateral triangle; Rotating first quarter-wave plate, to make through the light beam behind described first quarter-wave plate be circularly polarized light, rotate second half-wave plate and the 3rd half-wave plate, so that the light beam behind the light beam behind described second half-wave plate of process and described the 3rd half-wave plate of process is linearly polarized light, and the polarization direction of the light beam behind described second half-wave plate of process has the second identical angle with the x axle respectively with the polarization direction through the light beam behind described the 3rd half-wave plate, wherein, described x axle is the line through the locus of the light beam behind the light beam behind described second half-wave plate and described the 3rd half-wave plate of process; Place bbo crystal at described sample position, rotate the energy that first half-wave plate makes femto-second laser pulse and be decreased to below the damage threshold of described bbo crystal, regulate the first time-delay light path device and the second time-delay light path device and make through the light beam behind described second half-wave plate, arrive described sample position simultaneously through the light beam behind described first quarter-wave plate with through the light beam behind described the 3rd half-wave plate; The bbo crystal of described sample position is replaced by semi-conducting material, by regulating first Glan prism to determine the light beam polarization direction of main optical path, rotate first half-wave plate to regulate the pulse energy of main optical path, and rotate second half-wave plate and the 3rd half-wave plate, with regulate through the polarization direction of the light beam behind described second half-wave plate with through the polarization direction of the light beam behind described the 3rd half-wave plate respectively with the size of the second identical angle of x axle, to prepare various asymmetric micro-nano compounding period styles at described semi-conducting material, can carry out flexible design to the polarization combination of laser, prepare asymmetric micro-nano compounding period style quickly and easily, to remedy style dullness in the conventional laser interference technique, lack the problem of the deficiency of flexibility, can be in the laser preparation of nano structure, the material modification field.
Description of drawings
Fig. 1 is the structural representation that the femtosecond laser beam of one embodiment of the invention prepares the system of asymmetric micro-nano compounding period style;
Fig. 2 is the flow chart that the femtosecond laser beam of one embodiment of the invention prepares the method for asymmetric micro-nano compounding period style;
Fig. 3 is the locus schematic diagram of light beam, the light beam behind described first quarter-wave plate of process and the light beam behind described the 3rd half-wave plate of process behind described second half-wave plate of the process of one embodiment of the invention;
Fig. 4 is the first SEM design sketch of the asymmetric micro-nano compounding period style of one embodiment of the invention;
Fig. 5 is the second SEM design sketch of the asymmetric micro-nano compounding period style of one embodiment of the invention.
The specific embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Basic principle of the present invention is to set up femtosecond laser A, B, C three beam interference systems, and the locus of three-beam is equilateral triangle and arranges.Utilize this system's ablation semiconductor surface, the micro-nano compounding period style that the nanometer short period structure that preparation is induced by micron long-periodic structure and the femtosecond laser of the decision of interference strength distribution style is formed.(intermediate beam B is circularly polarized light by the polarization combination between design A, B, C three light beams; Both sides light beam A, C are linearly polarized light, and the polarization direction complementation), make the polarization state on each lattice point be investigation on asymmetric distribution.Because the nanostructured that femtosecond laser is induced is relevant with laser polarization, with the irradiation of femtosecond laser three beam interferences under this polarization combination semiconductor surface, can prepare the common asymmetric micro-nano compounding period style that determines of interference strength distribution style and polarization style quickly and easily.In addition, regulate the polarization direction of linearly polarized light further, can control the preparation of nanometer style.
As shown in Figure 1, the invention provides the system that a kind of femtosecond laser beam prepares asymmetric micro-nano compounding period style, comprising:
Produce the light source 1 of femto-second laser pulse;
Be set in turn in electronic shutter 2, first half-wave plate 3, first Glan prism 4 and first beam splitting chip 5 on the light path of described light source 1, concrete, femto-second laser pulse can be regulated laser energy and polarization directions through first half-wave plate 3 and first Glan prism 4 after by electronic shutter 2, then, femto-second laser pulse is divided into folded light beam A and transmitted light beam D two-beam after through first beam splitting chip 5, and the ratio of two beam energies is 1:2;
Be set in turn in the first time-delay light path device 6, first on the light path of folded light beam of described first beam splitting chip 5 be all-trans light microscopic 7, second be all-trans light microscopic 8, first plus lens 9 and second half-wave plate 10, concrete, folded light beam A is incident to the first time-delay light path device, 6 backs and forms emergent light A, emergent light A is all-trans after light microscopic 8 reflection through first light microscopic 7 and second that is all-trans, and is radiated at sample position 21 surface point O places through first plus lens 9 and second half-wave plate 10;
Be arranged at second beam splitting chip 11 on the light path of transmitted light beam D of described first beam splitting chip 5, concrete, transmitted light beam D is divided into the identical folded light beam B of energy and transmitted light beam C two-beam again through second beam splitting chip 11;
Be set in turn in the second time-delay light path device 12, the mirror 13 of climbing, second plus lens 14 and first quarter-wave plate 15 on the light path of folded light beam of described second beam splitting chip 11, concrete, folded light beam B is incident to the second time-delay light path device, 12 backs and forms emergent light B, after by the mirror system 13 of climbing emergent light B being climbed, be radiated at sample position (21) surface point O place through second plus lens 14 and first quarter-wave plate 15;
Be set in turn in the 3rd on the light path of transmitted light beam of described second beam splitting chip 11 be all-trans light microscopic 16, the 4th be all-trans light microscopic 17, the 5th be all-trans light microscopic 18, the 3rd plus lens 19 and the 3rd half-wave plate 20, concrete, transmitted light beam C is all-trans after light microscopic 18 reflection through the 3rd light microscopic 16, the 4th light microscopic 17 and the 5th that is all-trans that is all-trans, and is radiated at sample position (21) surface point O place through the 3rd plus lens 19 and the 3rd half-wave plate 20.Above-mentioned three light beam A, B, C go up confocal in an O at sample position (21).
As shown in Figure 2, the present invention also provides a kind of femtosecond laser beam that adopts above-mentioned femtosecond laser beam to prepare the system of asymmetric micro-nano compounding period style to prepare the method for asymmetric micro-nano compounding period style, comprising:
Step S1 regulates the folding time of electronic shutter 2 with the radiation pulses number of control femto-second laser pulse;
Step S2, regulate second light microscopic 8 and the 5th light microscopic 18 that is all-trans that is all-trans, make through the light beam A behind described second half-wave plate 10, coincide with 1 O through the light beam B behind described first quarter-wave plate 15 with through the light beam C behind described the 3rd half-wave plate 20 at sample position 21, and as shown in Figure 3, first angle theta between any two-beam among three light beam A, B, the C is identical, and the line of the locus of three light beam A, B, C constitutes equilateral triangle ABC;
Step S3, rotating first quarter-wave plate 15, to make through the light beam B behind described first quarter-wave plate 15 be circularly polarized light, rotate second half-wave plate 10 and the 3rd half-wave plate 20, so that be linearly polarized light through 10 light beam A behind described second half-wave plate with through the light beam C behind described the 3rd half-wave plate 20, and through the polarization direction of 10 light beam A behind described second half-wave plate with have as shown in Figure 3 the second identical angle α with the x axle respectively through the polarization direction of the light beam C behind described the 3rd half-wave plate 20, wherein, described x axle is the line AC through the locus of the light beam behind the light beam behind described second half-wave plate 10 and described the 3rd half-wave plate 20 of process;
Step S4, place bbo crystal at described sample position 21, rotating first half-wave plate 3 is decreased to below the damage threshold of described bbo crystal the energy of femto-second laser pulse, the adjusting first time-delay light path device 6 and the second time-delay light path device 12 make through the light beam behind described second half-wave plate 10, arrive described sample position 21 simultaneously through the light beam behind described first quarter-wave plate 15 with through the light beam behind described the 3rd half-wave plate 20, concrete, in this step, regulate first half-wave plate 3 make laser energy be decreased to the damage threshold of bbo crystal following after, judge the coincidence situation of three light beam pulses on time domain with the frequency signal after observing bbo crystal, by regulate first the time-delay light path device 6 and second the time-delay light path device 12 make three light beam A, B, the femtosecond pulse of C arrives sample position 21 simultaneously, namely observe this moment behind the BBO and frequently signal arrive the strongest;
Step S5, the bbo crystal of described sample position is replaced by semi-conducting material, by regulating first Glan prism 4 to determine the light beam polarization direction of main optical path, rotate first half-wave plate 3 to regulate the pulse energy of main optical path, and rotate second half-wave plate 10 and the 3rd half-wave plate 20 with regulate through the polarization direction of the light beam A behind described second half-wave plate 10 with through the polarization direction of the light beam C behind described the 3rd half-wave plate 20 respectively with the size of the second identical angle α of x axle, to prepare various asymmetric micro-nano compounding period styles at described semi-conducting material, concrete, in this step, changing sample position 21 is semi-conducting material, under certain polarization combination situation, regulate the folding time of electronic shutter 2 to determine the radiation pulses number, regulate the combination of first half-wave plate 3 and first Glan prism 4 to determine the energy size of light beam, the irradiation sample carries out the preparation of asymmetric micro-nano compounding period style, and can control the nanometer style of asymmetric compound structure easily, can prepare dissimilar asymmetric micro-nano compounding period styles as requested, this method has improved the diversity of original interference technique, enrich the nanometer cycle style of femtosecond laser interference technique preparation, be laser nano processing, material modifications etc. provide new means.
With 800nm, 40fs, the titanium of 1kHz: sapphire laser irradiation ZnO crystal is example, obtains the stereoscan photograph of asymmetric micro-nano compounding period style as shown in Figure 4 behind the femtosecond laser three beam interferences irradiation ZnO crystal.The energy density of any beam of laser is 0.25J/cm among three-beam A, B, the C
2, through 200 pulse irradiations, having shown the polarization combination situation of three light beam A, B, C among Fig. 4 (a), light beam B is circularly polarized light, and light beam A, C are linearly polarized light, and the polarization direction of light beam A, C and the x axle second angle α be 45 °.Sample surfaces presents the ablation spot that two-dimension periodic is arranged, and this is that intensity style by three beam interferences causes.From Fig. 4 (b), can clearly see, embed orthogonal nanometer striped in the left and right sides of each ablation spot, and be separated by the nanoparticle structure average mark at center.Nanometer fringe period and nano particle diameter are about 200nm, and the striped arrangement direction is vertical with laser polarization direction.The orientation of nanometer striped and the formation of nano particle are to be determined by the polarization style of three beam interferences.Thisly formed asymmetrical nanometer style by the separated mutually perpendicular nanometer striped of nano particle.
When changing light beam A, C and the x between centers second angle α, it is 35 °, femtosecond laser three light beam A, B, C are interfered the surface sweeping electromicroscopic photograph that obtains asymmetric micro-nano compounding period style as shown in Figure 5 behind the irradiation ZnO crystal, realize controlling the area ratio of orthogonal nanometer striated structure on each ablation spot.The energy density of any beam of laser is 0.2J/cm among three-beam A, B, the C
2Can regulate the distribution area ratio of mutually perpendicular nanometer striped through 200 pulse irradiations, as Fig. 5 (a) with 5(b), when rotation second half-wave plate 10 and the 3rd half-wave plate 20, when the polarization direction of change light beam A, C and the second angle α of x axle are 35 °, separate the zone of mutually perpendicular nanometer striped to right translation, thereby vertically striped area occupied increase in each ablation spot, and the horizontal stripe area occupied reduces, and has changed the proportion structure of the nanometer style in the asymmetric micro-nano compounding period structure.
In the above-mentioned steps, regulate the radiation pulses number of femtosecond laser by the control 2 folding times of electronic shutter, it is irradiation time, regulate Glan prism 4 and determine the light beam polarization direction of main optical path, the pulse energy that rotation half-wave plate 3 is regulated main optical path, rotating first quarter-wave plate 15, to make light beam B be circularly polarized light, regulate second half-wave plate 10 and the 3rd half-wave plate 20 changes light beam A respectively, the polarization direction of C, making light beam B is circularly polarized light, light beam A, C is linearly polarized light, and light beam A as shown in Figure 3, C is all α, three light beam A with second angle of x axle respectively, B, C can prepare asymmetric micro-nano compounding period style after interfering the ablation sample.In addition, can be by regulating the polarization direction of light beam B, C, namely during second angle [alpha], can change the shared area ratio of orthogonal nanometer striped on each ablation spot, thereby realize controlling of asymmetric micro-nano compounding period style.
The present invention induces the short period nanostructured to combine laser interferometry and femtosecond laser, has introduced the nano periodic structure that femtosecond laser is induced on the periodic structure basis of traditional three beam interferences preparation.Because nanostructured and laser polarization that femtosecond laser is induced are closely related, by regulating the polarization combination between three light beams, can prepare asymmetrical micro-nano compounding period style.Utilize same interference device system of the present invention during the invention process, only need the wave plate in rotation three beam path to regulate the light beam polarization combination, can prepare dissimilar compounding period structures, the implementer is just quick, resulting structures is of all shapes and colors, remedy existing laser interferometry style dullness, lacked the deficiency of flexibility.
Each embodiment adopts the mode of going forward one by one to describe in this specification, and what each embodiment stressed is and the difference of other embodiment that identical similar part is mutually referring to getting final product between each embodiment.For the disclosed system of embodiment, because corresponding with the embodiment disclosed method, so description is fairly simple, relevant part partly illustrates referring to method and gets final product.
The professional can also further recognize, unit and the algorithm steps of each example of describing in conjunction with embodiment disclosed herein, can realize with electronic hardware, computer software or the combination of the two, for the interchangeability of hardware and software clearly is described, composition and the step of each example described in general manner according to function in the above description.These functions still are that software mode is carried out with hardware actually, depend on application-specific and the design constraint of technical scheme.The professional and technical personnel can specifically should be used for using distinct methods to realize described function to each, but this realization should not thought and exceeds scope of the present invention.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.
Claims (2)
1. a femtosecond laser beam prepares the system of asymmetric micro-nano compounding period style, it is characterized in that, comprising:
Produce the light source of femto-second laser pulse;
Be set in turn in electronic shutter, first half-wave plate, first Glan prism and first beam splitting chip on the light path of described light source;
Be set in turn in the first time-delay light path device, first on the light path of folded light beam of described first beam splitting chip be all-trans light microscopic, second be all-trans light microscopic, first plus lens and second half-wave plate;
Be arranged at second beam splitting chip on the light path of transmitted light beam of described first beam splitting chip;
Be set in turn in the second time-delay light path device, the mirror of climbing, second plus lens and first quarter-wave plate on the light path of folded light beam of described second beam splitting chip;
Be set in turn in the 3rd on the light path of transmitted light beam of described second beam splitting chip be all-trans light microscopic, the 4th be all-trans light microscopic, the 5th be all-trans light microscopic, the 3rd plus lens and the 3rd half-wave plate.
2. a femtosecond laser beam that adopts femtosecond laser beam as claimed in claim 1 to prepare the system of asymmetric micro-nano compounding period style prepares the method for asymmetric micro-nano compounding period style, it is characterized in that, comprising:
Regulate the folding time of electronic shutter with the radiation pulses number of control femto-second laser pulse;
Regulate second light microscopic and the 5th light microscopic that is all-trans that is all-trans, make through the light beam behind described second half-wave plate, coincide with a bit at sample position through the light beam behind described first quarter-wave plate with through the light beam behind described the 3rd half-wave plate, and first angle between any two-beam in three light beams is identical, and the line of the locus of three light beams constitutes equilateral triangle;
Rotating first quarter-wave plate, to make through the light beam behind described first quarter-wave plate be circularly polarized light, rotate second half-wave plate and the 3rd half-wave plate, so that the light beam behind the light beam behind described second half-wave plate of process and described the 3rd half-wave plate of process is linearly polarized light, and the polarization direction of the light beam behind described second half-wave plate of process has the second identical angle with the x axle respectively with the polarization direction through the light beam behind described the 3rd half-wave plate, wherein, described x axle is the line through the locus of the light beam behind the light beam behind described second half-wave plate and described the 3rd half-wave plate of process;
Place bbo crystal at described sample position, rotate the energy that first half-wave plate makes femto-second laser pulse and be decreased to below the damage threshold of described bbo crystal, regulate the first time-delay light path device and the second time-delay light path device and make through the light beam behind described second half-wave plate, arrive described sample position simultaneously through the light beam behind described first quarter-wave plate with through the light beam behind described the 3rd half-wave plate;
The bbo crystal of described sample position is replaced by semi-conducting material, by regulating first Glan prism to determine the light beam polarization direction of main optical path, rotate first half-wave plate to regulate the pulse energy of main optical path, and rotate second half-wave plate and the 3rd half-wave plate, with regulate through the polarization direction of the light beam behind described second half-wave plate with through the polarization direction of the light beam behind described the 3rd half-wave plate and the size of the second identical angle of x axle, with at the various asymmetric micro-nano compounding period styles of described semi-conducting material preparation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101729207A CN103286453A (en) | 2013-05-10 | 2013-05-10 | System and method for preparing asymmetric micron-nano composite periodic patterns by femtosecond laser beams |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013101729207A CN103286453A (en) | 2013-05-10 | 2013-05-10 | System and method for preparing asymmetric micron-nano composite periodic patterns by femtosecond laser beams |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103286453A true CN103286453A (en) | 2013-09-11 |
Family
ID=49088263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101729207A Pending CN103286453A (en) | 2013-05-10 | 2013-05-10 | System and method for preparing asymmetric micron-nano composite periodic patterns by femtosecond laser beams |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103286453A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103706947A (en) * | 2013-11-14 | 2014-04-09 | 中国科学技术大学 | Large-area manufacturing method and processing system for surfaces of micrometer and nanometer structures with tunable periods and tunable morphologies |
| CN104625417A (en) * | 2014-12-29 | 2015-05-20 | 北京理工大学 | Method for controlling topography of nickel surface through femtosecond laser based on electronic dynamic control |
| CN104977725A (en) * | 2015-06-29 | 2015-10-14 | 中国科学院长春光学精密机械与物理研究所 | Optical system for photoelectric pod |
| CN105537757A (en) * | 2016-01-20 | 2016-05-04 | 四川大学 | Microprobe tip thermal forming system based on polysymmetrical laser beam |
| CN106483103A (en) * | 2016-12-01 | 2017-03-08 | 上海电机学院 | A kind of ultrafast process imaging device of high-space resolution |
| CN109119332A (en) * | 2018-07-30 | 2019-01-01 | 长春理工大学 | A method of orderly bimetal nano particles array is patterned using method for annealing preparation |
| CN109865939A (en) * | 2019-01-22 | 2019-06-11 | 华东师范大学 | A kind of device of double femtosecond laser beam cylindrical lens convergence interference preparation large area periodic micro/nano structures |
| CN109926712A (en) * | 2019-04-22 | 2019-06-25 | 上海电机学院 | A kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure |
| CN111168241A (en) * | 2020-01-09 | 2020-05-19 | 上海电机学院 | Method for double-beam pulse laser time-sharing induction MAG electric arc directional swinging surfacing |
| WO2020132947A1 (en) * | 2018-12-26 | 2020-07-02 | 深圳大学 | Processing system and processing process for microlens array |
| CN111408856A (en) * | 2020-04-15 | 2020-07-14 | 华东师范大学重庆研究院 | Method and device for manufacturing micro-fluidic chip by femtosecond plasma grating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102259826A (en) * | 2011-06-22 | 2011-11-30 | 上海电机学院 | Method and device for preparing micro nano composite periodic structure by using femtosecond laser beams |
| CN103071930A (en) * | 2013-01-09 | 2013-05-01 | 南开大学 | System and method for preparing micro-pore array through femtosecond laser direct writing |
-
2013
- 2013-05-10 CN CN2013101729207A patent/CN103286453A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102259826A (en) * | 2011-06-22 | 2011-11-30 | 上海电机学院 | Method and device for preparing micro nano composite periodic structure by using femtosecond laser beams |
| CN103071930A (en) * | 2013-01-09 | 2013-05-01 | 南开大学 | System and method for preparing micro-pore array through femtosecond laser direct writing |
Non-Patent Citations (2)
| Title |
|---|
| 熊平新 等: "三光束飞秒激光干涉在GaP，ZnSe表面诱导二维符合纳米-微米周期结构", 《物理学报》 * |
| 贾鑫: "飞秒激光制备半导体表面纳米周期结构", 《中国博士学位论文全文数据库 信息科技辑》 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103706947A (en) * | 2013-11-14 | 2014-04-09 | 中国科学技术大学 | Large-area manufacturing method and processing system for surfaces of micrometer and nanometer structures with tunable periods and tunable morphologies |
| CN103706947B (en) * | 2013-11-14 | 2015-10-28 | 中国科学技术大学 | A kind of cycle pattern tunable micro-and nano-structural surface large area preparation method and system of processing |
| CN104625417A (en) * | 2014-12-29 | 2015-05-20 | 北京理工大学 | Method for controlling topography of nickel surface through femtosecond laser based on electronic dynamic control |
| CN104977725A (en) * | 2015-06-29 | 2015-10-14 | 中国科学院长春光学精密机械与物理研究所 | Optical system for photoelectric pod |
| CN105537757A (en) * | 2016-01-20 | 2016-05-04 | 四川大学 | Microprobe tip thermal forming system based on polysymmetrical laser beam |
| CN106483103A (en) * | 2016-12-01 | 2017-03-08 | 上海电机学院 | A kind of ultrafast process imaging device of high-space resolution |
| CN109119332A (en) * | 2018-07-30 | 2019-01-01 | 长春理工大学 | A method of orderly bimetal nano particles array is patterned using method for annealing preparation |
| CN109119332B (en) * | 2018-07-30 | 2022-07-22 | 长春理工大学 | Method for preparing patterned ordered bimetal nanoparticle array by adopting annealing method |
| WO2020132947A1 (en) * | 2018-12-26 | 2020-07-02 | 深圳大学 | Processing system and processing process for microlens array |
| CN109865939A (en) * | 2019-01-22 | 2019-06-11 | 华东师范大学 | A kind of device of double femtosecond laser beam cylindrical lens convergence interference preparation large area periodic micro/nano structures |
| CN109926712A (en) * | 2019-04-22 | 2019-06-25 | 上海电机学院 | A kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure |
| CN111168241A (en) * | 2020-01-09 | 2020-05-19 | 上海电机学院 | Method for double-beam pulse laser time-sharing induction MAG electric arc directional swinging surfacing |
| CN111168241B (en) * | 2020-01-09 | 2021-05-07 | 上海电机学院 | Method for double-beam pulse laser time-sharing induction MAG electric arc directional swinging surfacing |
| CN111408856A (en) * | 2020-04-15 | 2020-07-14 | 华东师范大学重庆研究院 | Method and device for manufacturing micro-fluidic chip by femtosecond plasma grating |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103286453A (en) | System and method for preparing asymmetric micron-nano composite periodic patterns by femtosecond laser beams | |
| CN102259826A (en) | Method and device for preparing micro nano composite periodic structure by using femtosecond laser beams | |
| CN103071930B (en) | System and method for preparing micro-pore array through femtosecond laser direct writing | |
| CN105108342B (en) | Method for preparing two-dimensional metallic photonic crystal structure in large area through femtosecond laser direct writing | |
| CN103447693A (en) | Method for manufacturing micrometer and nanometer composite periodic structure | |
| CN103862171A (en) | Method for preparing two-dimensional periodic metal particle array structure through dual-wavelength femtosecond lasers | |
| WO2016079063A1 (en) | Diffractive optical beam-shaping element | |
| CN105171235B (en) | A kind of double focus laser micromachining device and its processing method | |
| Liu et al. | Ciliary white light: optical aspect of ultrashort laser ablation on transparent dielectrics | |
| CN109702323B (en) | Depth continuously adjustable near 4 pi solid angle femtosecond laser direct writing processing method and application | |
| CN109926712A (en) | A kind of device and method of femtosecond laser two-beam interference manufacturing cycle nanostructure | |
| CN109865939A (en) | A kind of device of double femtosecond laser beam cylindrical lens convergence interference preparation large area periodic micro/nano structures | |
| WO2013186179A2 (en) | Device and method for the interference structuring of samples, and samples structured in such a way | |
| WO2020109767A1 (en) | Method for fabricating nanostructured optical elements using polarised light | |
| CN202013486U (en) | Device for large-area manufacture of photonic crystal and photonic quasicrystal by adopting single-refraction prism | |
| Hermens et al. | Automated polarization control for the precise alignment of laser-induced self-organized nanostructures | |
| CN104111531B (en) | A kind of salt free ligands grating structure light production method of Parameter adjustable and device | |
| JP2020514075A (en) | Method for manufacturing transmissive or reflective optical system and lens | |
| TW201532080A (en) | Polarized laser for patterning of silver nanowire transparent conductive films | |
| TW201826048A (en) | Manufacturing method of metallic mold roll for pattern transfer having minute periodical structure and metallic mold roll for pattern transfer | |
| CN106457463B (en) | Decorative part and its manufacturing method | |
| WO2022033955A1 (en) | Laser machining a workpiece with a curved surface | |
| CN112162467A (en) | Laser curved surface processing system and manufacturing method for super-hydrophobic, anti-icing and wind resistance reduction | |
| US10365499B2 (en) | Laser-marked article with moire pattern | |
| Luo et al. | Optimal condition for employing an axicon-generated Bessel beam to fabricate cylindrical microlens arrays |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130911 |