CN103447693A - Method for manufacturing micrometer and nanometer composite periodic structure - Google Patents
Method for manufacturing micrometer and nanometer composite periodic structure Download PDFInfo
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- CN103447693A CN103447693A CN2013103037658A CN201310303765A CN103447693A CN 103447693 A CN103447693 A CN 103447693A CN 2013103037658 A CN2013103037658 A CN 2013103037658A CN 201310303765 A CN201310303765 A CN 201310303765A CN 103447693 A CN103447693 A CN 103447693A
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Abstract
The invention provides a method for manufacturing a micrometer and nanometer composite periodic structure. The method has the advantages that a laser interference technique and a femtosecond laser-induced quasi-periodic nanometer structure are combined with each other, and the femtosecond laser-induced quasi-periodic nanometer structure is introduced on the basis of a periodic structure manufactured by the aid of the traditional laser interference technique; as the femtosecond laser-induced nanometer structure is closely related to laser polarization, different micrometer and nanometer composite periodic structures can be manufactured by means of changing polarization states and energy among four light beams, the technique can be implemented conveniently and quickly, the manufacturing time is short, and shortcomings of simple patterns and poor flexibility of the existing laser interference technique are overcome; the manufactured micrometer and nanometer composite periodic structure is excellent in periodicity and uniformity owing to an interference characteristic, and shortcomings of the existing femtosecond laser-induced quasi-periodic nanometer structure are overcome.
Description
Technical field
The present invention relates to the micro-processing of ultrashort pulse and multiple-beam interference technical field, relate in particular to a kind of preparation method of the micron/nano compounding period based on the femtosecond laser interference technique.
Background technology
Laser interferometry is one of effective means of manufacturing cycle structure, and is widely used because its technique is simple and with low cost.Laser interferometry is multiple laser to be incided to the same area on sample with certain angle be concerned with, and the intensity distributions pattern mint-mark of formation is on light-sensitive material, thus the manufacturing cycle structure.Rule two dimension, the three-dimensional structure that can prepare different cycles by the arrangement mode between change number of beams and light beam.
Periodic structure prepared by existing laser interferometry often is greater than optical maser wavelength, in micron dimension, is difficult to obtain the periodic structure of nanometer scale.Simultaneously, the arrangement position of periodic structure is only determined by the intensity distributions of laser interference.If obtain the periodic structure of different spread geometries, need to re-establish laser interference system to change number of beams and locus.Therefore, the periodic structure style dullness that laser interferometry obtains, lack flexibility.
From 2002, after femtosecond laser irradiates some semiconductor, can be in material surface and the inner paracycle nanostructured of yardstick much smaller than optical maser wavelength of inducing.The laser polarization Determines shape of nanostructured, in general, linearly polarized light induced nano striated structure, and stripe direction is vertical with laser polarization direction; Circularly polarized light induced nano grain structure.This method has great application prospect on material modification, by this method, has prepared " the black silicon " that absorptivity greatly strengthens, and prepares striated structure in metal surface and obtains SiC semiconductor that various non-ferrous metals and electrical conductivity strengthen etc.
Yet nanostructured paracycle that femtosecond laser is induced is relevant to laser polarization, if expect dissimilar nanometer style, need constantly to change the polarization state of laser, preparation time is long, and periodicity, the uniformity of resulting structures are poor.
Therefore, need a kind of method of utilizing the femtosecond laser interference technique to prepare nested micron/nano compounding period, to avoid above-mentioned defect.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of micron/nano compounding period, to solve the problem of style dullness in the conventional laser interference technique, shortage flexibility.
For addressing the above problem, the present invention proposes a kind of preparation method of micron/nano compounding period, comprises the following steps:
Set up femtosecond laser four beam interference systems, the locus of the four bundle light that make described femtosecond laser four beam interference systems produce is square arranges, and confocal and mutual interference after final outgoing;
Provide to prepare a plurality of semiconductor samples of different micron/nano compounding periods;
After changing described four bundle polarized state of lights and energy for each semiconductor samples, corresponding semiconductor samples is placed on to the confocal place ablation of four bundle light, prepare corresponding micron/nano compounding period, each micron/nano compounding period includes the micron long-periodic structure of interference strength style decision and nanostructured paracycle that femtosecond laser is induced.
Further, described femtosecond laser four beam interference systems comprise:
Light source (1), for generation of femto-second laser pulse;
Electronic shutter (2), the femto-second laser pulse number that its folding Time dependent irradiates;
The first half-wave plate (3) and the first Glan prism (4), for regulating energy and the polarization direction through the femto-second laser pulse of electronic shutter (2);
The first beam splitting chip (5); Carry out the first light splitting for the femto-second laser pulse to after regulating, be divided into folded light beam E, transmitted light beam F two-beam that energy is identical;
The second beam splitting chip (6), carry out light splitting for the second time for the folded light beam E to being incident to, and is divided into folded light beam A, transmitted light beam C two-beam that energy is identical;
The first be all-trans light microscopic (7), the first plus lens (8) and the second half-wave plate (9), be radiated at alternative sample (25) surface point O place for the reflection of the folded light beam A by being incident to, after converging;
The first time delay light path system (10), second be all-trans light microscopic (11), the 3rd be all-trans light microscopic (12), the second plus lens (13) and the 3rd half-wave plate (14), be radiated at alternative sample (25) surface point O place for the transmitted light beam C time delay by being incident to, total reflection, after converging confocal;
The 3rd beam splitting chip (15), carry out light splitting for the second time for the transmitted light beam F to being incident to, and is divided into folded light beam B, transmitted light beam D two-beam that energy is identical;
The second time delay light path system (16), the 4th be all-trans light microscopic (17), the 5th be all-trans light microscopic (18), the 3rd plus lens (19) and the 4th half-wave plate (20), be radiated at alternative sample (25) surface point O place for the folded light beam B time delay by being incident to, total reflection, after converging confocal;
The 3rd time delay light path system (21), the 6th be all-trans light microscopic (22), the 4th plus lens (23) and the 5th wave plate (24), be radiated at alternative sample (25) surface point O place for the transmitted light beam D time delay by being incident to, after reflecting, converging confocal.
Further, the step of setting up described femtosecond laser four beam interference systems comprises:
Light source (1) is set, electronic shutter (2), the first half-wave plate (3), the first Glan prism (4), the first beam splitting chip (5), the second beam splitting chip (6), first light microscopic (7) that is all-trans, the first plus lens (8), the second half-wave plate (9), the first time delay light path system (10), second light microscopic (11) that is all-trans, the 3rd light microscopic (12) that is all-trans, the second plus lens (13), the 3rd half-wave plate (14), the 3rd beam splitting chip (15), the second time delay light path system (16), the 4th light microscopic (17) that is all-trans, the 5th light microscopic (18) that is all-trans, the 3rd plus lens (19), the 4th half-wave plate (20), the 3rd time delay light path system (21), the 6th light microscopic (22) that is all-trans, the 4th plus lens (23), the 5th wave plate (24),
Open light source (1) and control the irradiation time of the folding Timing femtosecond laser of electronic shutter (2), be i.e. the radiation pulses number;
Regulate the first Glan prism (4) and determine the light beam polarization direction of main optical path, rotate the pulse energy that the first half-wave plate (3) is regulated main optical path;
Regulate first light microscopic (7), the 5th light microscopic (18), the 3rd light microscopic (12) and the 6th light microscopic (22) that is all-trans that is all-trans that is all-trans that is all-trans, make folded light beam A, folded light beam B, transmitted light beam C, folded light beam D tetra-bundle light be square, and coincide with the O place while impinging upon alternative sample (25) surface.
Further, changing the polarization state of described four bundles between light and the step of energy comprises:
Regulate the first half-wave plate (3) the femto-second laser pulse energy is decreased to below the damage threshold of alternative sample (25), after observe substituting sample (25) and frequently signal is to judge the coincidence situation of four light beam pulses on time domain;
Regulate the first time delay light path system (10), the second time delay light path system (16) and the 3rd time delay light path system (21) and make the femtosecond pulse of folded light beam A, folded light beam B, transmitted light beam C, folded light beam D tetra-bundle light arrive alternative sample (25) simultaneously, after observing alternative sample (25) and frequently signal is for the strongest.
Regulate the second half-wave plate (9), the 3rd half-wave plate (14), the 4th half-wave plate (20) and the 5th wave plate (24), regulate four bundle polarized state of lights;
In certain polarization state situation, regulate the folding time of electronic shutter (2) to determine the radiation pulses number, regulate the combination of the first half-wave plate (3) and the first Glan prism (4) to determine the energy size of four bundle light.
Further, described alternative sample (25) is bbo crystal.
Further, after the described four bundle polarized state of lights of described change, described four bundle polarisation of light directions are identical and while being the linearly polarized light along one group of opposite side of square, the micron/nano compounding period made comprises the ablation spot that the square cycle arranges, and on each ablation spot, embeds short-period nanometer striped is arranged.
Further, after the described four bundle polarized state of lights of described change, described four bundle light polarization direction are identical and while being respectively the linearly polarized light of the diagonal that is parallel to square in twos, the micron/nano compounding period made comprises with the square two dimension micron-nanometer compounding period of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period of the square of vertical nanometer striped, both are mutually nested, have formed nested micron-nanometer compounding period.
Further, after the described four bundle polarized state of lights of described change, three-beam in described four bundle light is respectively the linearly polarized light of the diagonal that is parallel to square, light beam is during along the linearly polarized light on a limit of square, the micron/nano compounding period made comprises with the square two dimension micron-nanometer compounding period of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period, and with the square of horizontal nanometer striped two dimension micron-nanometer compounding period relatively with the vertical weakened of the square two dimension micron-nanometer compounding period of nanometer striped.
Further, after the described four bundle polarized state of lights of described change, three-beam in described four bundle light is respectively the linearly polarized light of the diagonal that is parallel to square, when light beam is circularly polarized light, the micron/nano compounding period made comprises with the square two dimension micron-nanometer compounding period of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period, and relative close with the position with the vertical two-dimentional micron-nanometer compounding period of square of nanometer striped with the square of horizontal nanometer striped two dimension micron-nanometer compounding period.
Compared with prior art, the preparation method of micron/nano compounding period of the present invention, induce the paracycle nanostructured to combine laser interferometry and femtosecond laser, introduced nanostructured paracycle that femtosecond laser is induced on the basis of conventional laser interference technique manufacturing cycle structure.Because nanostructured and laser polarization that femtosecond laser is induced are closely related, by changing polarization state and the energy between four light beams, can prepare different micron/nano compounding periods, the implementer is just quick, preparation time is short, make up existing laser interferometry style dullness, lacked the deficiency of flexibility.Simultaneously, due to the characteristic of interfering, the micron/nano compounding period made has good periodicity and uniformity, has improved the defect that femtosecond laser is induced nanostructured paracycle.
The accompanying drawing explanation
Fig. 1 is preparation method's flow chart of the micron/nano compounding period of the specific embodiment of the invention;
Fig. 2 is the structural representation of the femtosecond laser four beam interference systems of the specific embodiment of the invention;
Fig. 3 A to 3D is the SEM design sketch of the micron/nano composite construction that makes under four kinds of polarization states of the specific embodiment of the invention.
Wherein, 1, femtosecond laser light source; 2 electronic shutters; 3, the first half-wave plate; 9, the second half-wave plate; 14, the 3rd half-wave plate; 20, the 4th half-wave plate; 4, the first Glan prism; 5, the first beam splitting chip; 6, the second beam splitting chip; 15, the 3rd beam splitting chip; 7, first light microscopic that is all-trans; 11, second light microscopic that is all-trans; 12, the 3rd light microscopic that is all-trans; 17, the 4th light microscopic that is all-trans; 18, the 5th light microscopic that is all-trans; 22, the 6th light microscopic that is all-trans; 8, the first plus lens; 13, the second plus lens; 19, the 3rd plus lens; 23, the 4th plus lens; 10, the first time delay light path system; 16, the second time delay light path system; 21, the 3rd time delay light path system; 24, the 5th wave plate; 25, substitute sample; 26, the spatial distribution of four light beams; Folded light beam A, B, E; Transmitted light beam C, D, F.
The specific embodiment
Core concept of the present invention is the preparation method who discloses a kind of micron/nano compounding period, is mainly to set up femtosecond laser four beam interference systems, and the locus of four bundle light is square and arranges.Utilize this system ablation semiconductor samples surface, prepare the micron/nano compounding period, this structure is comprised of two parts: nanostructured paracycle that the micron long-periodic structure that the interference strength style determines and femtosecond laser are induced.Further, by changing the polarization state of four light beams, can to the micron long-periodic structure and paracycle the nanostructured relative intensity and relative position controlled, thereby obtain the micron/nano compounding period of different pattern.
For purpose of the present invention, feature are become apparent, below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described, yet the present invention can realize by different forms, should not think and just be confined to described embodiment.
Please refer to Fig. 1, the present invention proposes a kind of preparation method of micron/nano compounding period, comprises the following steps:
S1, set up femtosecond laser four beam interference systems, and the locus of the four bundle light that make described femtosecond laser four beam interference systems produce is square arranges, and confocal and mutual interference after final outgoing;
S2, provide to prepare a plurality of semiconductor samples of different micron/nano compounding periods;
S3, after changing described four bundle polarized state of lights and energy for each semiconductor samples, corresponding semiconductor samples is placed on to the confocal place ablation of four bundle light, prepare corresponding micron/nano compounding period, each micron/nano compounding period includes the micron long-periodic structure of interference strength style decision and nanostructured paracycle that femtosecond laser is induced.
Please refer to Fig. 2, in step S1, the femtosecond laser four beam interference systems of foundation comprise:
Light source (1), for generation of femto-second laser pulse;
Electronic shutter (2), the femto-second laser pulse number that its folding Time dependent irradiates;
The first half-wave plate (3) and the first Glan prism (4), for regulating energy and the polarization direction through the femto-second laser pulse of electronic shutter (2);
The first beam splitting chip (5); Carry out the first light splitting for the femto-second laser pulse to after regulating, be divided into folded light beam E, transmitted light beam F two-beam that energy is identical;
The second beam splitting chip (6), carry out light splitting for the second time for the folded light beam E to being incident to, and is divided into folded light beam A, transmitted light beam C two-beam that energy is identical;
The first be all-trans light microscopic (7), the first plus lens (8) and the second half-wave plate (9), be radiated at alternative sample (25) surface point O place after reflecting, converge for the folded light beam A by being incident to, described alternative sample (25), for determining the confocal of four bundle light, can be bbo crystal;
The first time delay light path system (10), second be all-trans light microscopic (11), the 3rd be all-trans light microscopic (12), the second plus lens (13) and the 3rd half-wave plate (14), be radiated at alternative sample (25) surface point O place for the transmitted light beam C time delay by being incident to, total reflection, after converging confocal;
The 3rd beam splitting chip (15), carry out light splitting for the second time for the transmitted light beam F to being incident to, and is divided into folded light beam B, transmitted light beam D two-beam that energy is identical;
The second time delay light path system (16), the 4th be all-trans light microscopic (17), the 5th be all-trans light microscopic (18), the 3rd plus lens (19) and the 4th half-wave plate (20), be radiated at alternative sample (25) surface point O place for the folded light beam B time delay by being incident to, total reflection, after converging confocal;
The 3rd time delay light path system (21), the 6th be all-trans light microscopic (22), the 4th plus lens (23) and the 5th wave plate (24), be radiated at alternative sample (25) surface point O place for the transmitted light beam D time delay by being incident to, after reflecting, converging confocal.
Therefore, step S1: the process of setting up described femtosecond laser four beam interference systems comprises:
Light source (1) is set, electronic shutter (2), the first half-wave plate (3), the first Glan prism (4), the first beam splitting chip (5), the second beam splitting chip (6), first light microscopic (7) that is all-trans, the first plus lens (8), the second half-wave plate (9), the first time delay light path system (10), second light microscopic (11) that is all-trans, the 3rd light microscopic (12) that is all-trans, the second plus lens (13), the 3rd half-wave plate (14), the 3rd beam splitting chip (15), the second time delay light path system (16), the 4th light microscopic (17) that is all-trans, the 5th light microscopic (18) that is all-trans, the 3rd plus lens (19), the 4th half-wave plate (20), the 3rd time delay light path system (21), the 6th light microscopic (22) that is all-trans, the 4th plus lens (23), the 5th wave plate (24),
Open light source (1) and control the irradiation time of the folding Timing femtosecond laser of electronic shutter (2), be i.e. the radiation pulses number;
Regulate the first Glan prism (4) and determine the light beam polarization direction of main optical path, rotate the pulse energy that the first half-wave plate (3) is regulated main optical path;
Regulate first light microscopic (7), the 5th light microscopic (18), the 3rd light microscopic (12) and the 6th light microscopic (22) that is all-trans that is all-trans that is all-trans that is all-trans, make folded light beam A, folded light beam B, transmitted light beam C, folded light beam D tetra-bundle light be square, and coincide with the O place while impinging upon alternative sample (25) surface, in Fig. 2, (26) show the spatial distribution of four light beam A, B, C, D and the locus of four bundle light coincide point O on sample (25), and four light beams are square.
In the present embodiment, step S3 is specifically used said system to prepare the process of micron/nano composite construction, be mainly to regulate first light microscopic (7), the 5th light microscopic (18), the 3rd light microscopic (12) and the 6th light microscopic (22) that is all-trans that is all-trans that is all-trans that is all-trans, four bundle light A, B, C, D are overlapped at sample surfaces.Regulate the second half-wave plate (9), the 3rd half-wave plate (14), the 4th half-wave plate (20) and the 5th wave plate (24), change the polarization state of four bundle light A, B, C, D.In this step, at first, regulate the first half-wave plate (3) the femto-second laser pulse energy is decreased to below the damage threshold of alternative sample (25), after observe substituting sample (25) and frequently signal is to judge the coincidence situation of four light beam pulses on time domain, then, regulate the first time delay light path system (10), the second time delay light path system (16) and the 3rd time delay light path system (21) and make the femtosecond pulse of folded light beam A, folded light beam B, transmitted light beam C, transmitted light beam D tetra-bundle light arrive alternative sample (25) simultaneously, after observing alternative sample (25) and frequently signal is for the strongest, then, regulate the second half-wave plate (9), the 3rd half-wave plate (14), the 4th half-wave plate (20) and the 5th wave plate (24), set a kind of polarization state of four bundle light A, B, C, D, then, replace described alternative sample (25) with a semiconductor samples, in the polarization state situation set, regulate the folding time of electronic shutter (2) to determine the radiation pulses number, regulate the combination of the first half-wave plate (3) and the first Glan prism (4) to determine four bundle light A, B, C, the energy size of D, four bundle light A, B, C, D irradiates the semiconductor samples after replacing, can make a kind of micron-nanometer compounding period, the micron long-periodic structure of this micron-nanometer compounding period and paracycle nanostructured relative intensity and the four bundle light A that set before depending on of relative position, B, C, the polarization state of D and energy.Therefore, another kind of polarization state and the energy of four bundle light A, B, C, D can be set, change polarization state and the energy of four bundle light A, B, C, D, with this, make another kind of micron-nanometer compounding period.
In the present embodiment, with 800nm, 40fs, the titanium of 1kHz: it is example that sapphire laser is irradiated ZnO crystal, has set altogether four kind of four bundle polarized state of light, has obtained four kinds of micron-nanometer compounding periods.Please refer to Fig. 3 A to 3D, shown in Fig. 3 A to 3D, under four kinds of polarization states of four bundle light A, B, C, D combination, femtosecond laser four beam interferences irradiate the electron scanning micrograph of the micron-nanometer compounding period prepared after ZnO crystal.Energy density and the radiation pulses number of light beam are as follows arbitrarily: in the situation shown in Fig. 3 A, and 0.036J/cm
2, 30 pulses; In situation shown in Fig. 3 B, 0.037J/cm
2, 40 pulses; In situation shown in Fig. 3 C, 0.035J/cm
2, 1000 pulses; In situation shown in Fig. 3 D, 0.04J/cm
2, 600 pulses.In each figure, lower left corner illustration is four bundle light A, B, C, D polarization state separately.In figure, black, white dashed line frame mean respectively the two cover square two dimension micron-nanometer compounding periods with horizontal nanometer striped, vertical nanometer striped.In figure, scale is 2 μ m.
In Fig. 3 A, the polarization direction of described four bundle light A, B, C, D is identical and be along the linearly polarized light of one group of opposite side of square, the micron-nanometer compounding period made is rendered as the ablation spot (as shown in black surround in figure) that square cycle on semiconductor samples surface arranges, and this is that intensity distributions by four beam interferences causes.Embed on each ablation spot short-period nanometer striped is arranged, fringe period is about 200nm, and the striped along continuous straight runs is arranged, vertical with four bundle light A, B, C, D polarization direction.
In Fig. 3 B, described four bundle light A, B, C, the polarization direction of D (in figure shown in double-head arrow) is identical and be respectively the linearly polarized light of the diagonal that is parallel to square in twos, it is light beam A, the C polarization direction is identical and be parallel to a diagonal of square simultaneously, light beam B, the D polarization direction is identical and be parallel to another diagonal of square simultaneously, the micron/nano compounding period made comprises with the square two dimension micron-nanometer compounding period (as shown in black dotted lines frame in figure) of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period (as shown in white dashed line frame in figure) of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period, this nested micron-nanometer compounding period has obvious difference with respect to the micron-nanometer compounding period shown in Fig. 3 A, the change of its nanometer stripe direction is by four bundle light A, B, C, the variation of the polarization state of D causes.
In Fig. 3 C, described four bundle light A, B, C, three-beam in D is respectively the linearly polarized light of the diagonal that is parallel to square, light beam is the linearly polarized light along a limit of square, it is light beam A, B, three-beam A in C and Fig. 3 B, B, the polarization direction of C is identical, the change of polarization of light beam D is the limit along square, the micron-nanometer compounding period made comprises with the square two dimension micron-nanometer compounding period (as shown in black dotted lines frame in figure) of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period (as shown in white dashed line frame in figure) of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period, and die down in the relative Fig. 3 B of square two dimension micron-nanometer compounding period (as shown in black dotted lines frame in figure) intensity with horizontal nanometer striped, also can be described as the weakened of the relative two dimension micron-nanometer compounding period of the square with vertical nanometer striped (as shown in white dashed line frame in figure).
In Fig. 3 D, described four bundle light A, B, C, three-beam in D is the linearly polarized light that is respectively the diagonal that is parallel to square, light beam is circularly polarized light, it is light beam A, B, three-beam A in C and Fig. 3 B, B, the polarization direction of C, the change of polarization of light beam D is circular polarization, the micron-nanometer compounding period made comprises with the square two dimension micron-nanometer compounding period (as shown in black dotted lines frame in figure) of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period (as shown in white dashed line frame in figure) of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period, and compare Fig. 3 B and Fig. 3 C, relative close with the position with the vertical two-dimentional micron-nanometer compounding period of square of nanometer striped with the square of horizontal nanometer striped two dimension micron-nanometer compounding period.
As from the foregoing, change four light beam A in step S3, B, C, D polarization state and energy separately, present the polarization combination made new advances, can realize the relative intensity of the nested micron-nanometer compounding period of two covers and the adjusting of relative position, thereby make different micron-nanometer compounding periods, wherein the most simply adjustment mode is: wherein three beams polarized state of light and constant in energy, change another bundle polarized state of light and energy, present the polarization combination made new advances, can realize the relative intensity of the nested micron-nanometer compounding period of two covers and the adjusting of relative position, thereby make different micron-nanometer compounding periods.
In sum, the preparation method of micron/nano compounding period of the present invention, induce the paracycle nanostructured to combine laser interferometry and femtosecond laser, introduced nanostructured paracycle that femtosecond laser is induced on the basis of conventional laser interference technique manufacturing cycle structure.Because nanostructured and laser polarization that femtosecond laser is induced are closely related, utilize same interference device, by rotating simply the wave plate in four beam path, can prepare nested micron-nanometer compounding period, by regulating a branch of polarized state of light in four light beams, can realize the relative intensity of two cover micron-nanometer compounding periods in nested micron-nanometer compounding period and the adjusting of relative position.Thereby, the wave plate that only need rotate when present technique is implemented in four beam path is regulated the light beam polarization state, can prepare dissimilar compounding period, the implementer is just quick, made up existing laser interferometry style dullness, the deficiency that lacks flexibility, for the researchs such as laser nano processing, material modification provide new technological means.
In the nested micron-nanometer compounding period prepared by femtosecond laser four beam interference technology, two cover compounding periods possess the nanometer striped of different directions.Simultaneously, due to the characteristic of interfering, two cover compounding periods have good periodicity and uniformity, have improved the technological means that femtosecond laser is induced nanostructured paracycle.And pass through rotating wave plate simply and regulate the laser polarization state, realization is controlled two cover compounding periods, can design according to demand, prepare nested micron-nanometer compounding period.This is to the supplementing of micron-nanometer compounding period, and has expanded the application prospect of this structure.
Obviously, those skilled in the art can carry out various changes and modification and not break away from the spirit and scope of the present invention invention.Like this, if within of the present invention these are revised and modification belongs to the scope of the claims in the present invention and equivalent technologies thereof, the present invention also is intended to comprise these changes and modification interior.
Claims (9)
1. the preparation method of a micron/nano compounding period, is characterized in that, comprises the following steps:
Set up femtosecond laser four beam interference systems, the locus of the four bundle light that make described femtosecond laser four beam interference systems produce is square arranges, and confocal and mutual interference after final outgoing;
Provide to prepare a plurality of semiconductor samples of different micron/nano compounding periods;
After changing described four bundle polarized state of lights and energy for each semiconductor samples, corresponding semiconductor samples is placed on to the confocal place ablation of four bundle light, prepare corresponding micron/nano compounding period, each micron/nano compounding period includes the micron long-periodic structure of interference strength style decision and nanostructured paracycle that femtosecond laser is induced.
2. the preparation method of micron/nano compounding period as claimed in claim 1, is characterized in that, described femtosecond laser four beam interference systems comprise:
Light source (1), for generation of femto-second laser pulse;
Electronic shutter (2), the femto-second laser pulse number that its folding Time dependent irradiates;
The first half-wave plate (3) and the first Glan prism (4), for regulating energy and the polarization direction through the femto-second laser pulse of electronic shutter (2);
The first beam splitting chip (5); Carry out the first light splitting for the femto-second laser pulse to after regulating, be divided into folded light beam E, transmitted light beam F two-beam that energy is identical;
The second beam splitting chip (6), carry out light splitting for the second time for the folded light beam E to being incident to, and is divided into folded light beam A, transmitted light beam C two-beam that energy is identical;
The first be all-trans light microscopic (7), the first plus lens (8) and the second half-wave plate (9), be radiated at alternative sample (25) surface point O place for the reflection of the folded light beam A by being incident to, after converging;
The first time delay light path system (10), second be all-trans light microscopic (11), the 3rd be all-trans light microscopic (12), the second plus lens (13) and the 3rd half-wave plate (14), be radiated at alternative sample (25) surface point O place for the transmitted light beam C time delay by being incident to, total reflection, after converging confocal;
The 3rd beam splitting chip (15), carry out light splitting for the second time for the transmitted light beam F to being incident to, and is divided into folded light beam B, transmitted light beam D two-beam that energy is identical;
The second time delay light path system (16), the 4th be all-trans light microscopic (17), the 5th be all-trans light microscopic (18), the 3rd plus lens (19) and the 4th half-wave plate (20), be radiated at alternative sample (25) surface point O place for the folded light beam B time delay by being incident to, total reflection, after converging confocal;
The 3rd time delay light path system (21), the 6th be all-trans light microscopic (22), the 4th plus lens (23) and the 5th wave plate (24), be radiated at alternative sample (25) surface point O place for the transmitted light beam D time delay by being incident to, after reflecting, converging confocal.
3. the preparation method of micron/nano compounding period as claimed in claim 2, is characterized in that, the step of setting up described femtosecond laser four beam interference systems comprises:
Light source (1) is set, electronic shutter (2), the first half-wave plate (3), the first Glan prism (4), the first beam splitting chip (5), the second beam splitting chip (6), first light microscopic (7) that is all-trans, the first plus lens (8), the second half-wave plate (9), the first time delay light path system (10), second light microscopic (11) that is all-trans, the 3rd light microscopic (12) that is all-trans, the second plus lens (13), the 3rd half-wave plate (14), the 3rd beam splitting chip (15), the second time delay light path system (16), the 4th light microscopic (17) that is all-trans, the 5th light microscopic (18) that is all-trans, the 3rd plus lens (19), the 4th half-wave plate (20), the 3rd time delay light path system (21), the 6th light microscopic (22) that is all-trans, the 4th plus lens (23), the 5th wave plate (24),
Open light source (1) and control the irradiation time of the folding Timing femtosecond laser of electronic shutter (2), be i.e. the radiation pulses number;
Regulate the first Glan prism (4) and determine the light beam polarization direction of main optical path, rotate the pulse energy that the first half-wave plate (3) is regulated main optical path;
Regulate first light microscopic (7), the 5th light microscopic (18), the 3rd light microscopic (12) and the 6th light microscopic (22) that is all-trans that is all-trans that is all-trans that is all-trans, make folded light beam A, folded light beam B, transmitted light beam C, folded light beam D tetra-bundle light be square, and coincide with the O place while impinging upon alternative sample (25) surface.
4. the preparation method of micron/nano compounding period as claimed in claim 3, is characterized in that, changes the polarization state of described four bundles between light and the step of energy and comprise:
Regulate the first half-wave plate (3) the femto-second laser pulse energy is decreased to below the damage threshold of alternative sample (25), after observe substituting sample (25) and frequently signal is to judge the coincidence situation of four light beam pulses on time domain;
Regulate the first time delay light path system (10), the second time delay light path system (16) and the 3rd time delay light path system (21) and make the femtosecond pulse of folded light beam A, folded light beam B, transmitted light beam C, folded light beam D tetra-bundle light arrive alternative sample (25) simultaneously, after observing alternative sample (25) and frequently signal is for the strongest.
Regulate the second half-wave plate (9), the 3rd half-wave plate (14), the 4th half-wave plate (20) and the 5th wave plate (24), regulate four bundle polarized state of lights;
In certain polarization state situation, regulate the folding time of electronic shutter (2) to determine the radiation pulses number, regulate the combination of the first half-wave plate (3) and the first Glan prism (4) to determine the energy size of four bundle light.
5. the preparation method of micron/nano compounding period as described as claim 3 or 4, is characterized in that, described alternative sample (25) is bbo crystal.
6. the preparation method of micron/nano compounding period as claimed in claim 1, it is characterized in that, after the described four bundle polarized state of lights of described change, described four bundle polarisation of light directions are identical and while being the linearly polarized light along one group of opposite side of square, the micron/nano compounding period made comprises the ablation spot that the square cycle arranges, and on each ablation spot, embeds short-period nanometer striped is arranged.
7. the preparation method of micron/nano compounding period as claimed in claim 1, it is characterized in that, after the described four bundle polarized state of lights of described change, described four bundle light polarization direction are identical and while being respectively the linearly polarized light of the diagonal that is parallel to square in twos, the micron/nano compounding period made comprises with the square two dimension micron-nanometer compounding period of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period.
8. the preparation method of micron/nano compounding period as claimed in claim 7, it is characterized in that, after the described four bundle polarized state of lights of described change, three-beam in described four bundle light is respectively the linearly polarized light of the diagonal that is parallel to square, light beam is during along the linearly polarized light on a limit of square, the micron/nano compounding period made comprises with the square two dimension micron-nanometer compounding period of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period, and with the square of horizontal nanometer striped two dimension micron-nanometer compounding period relatively with the vertical weakened of the square two dimension micron-nanometer compounding period of nanometer striped.
9. the preparation method of micron/nano compounding period as claimed in claim 8, it is characterized in that, after the described four bundle polarized state of lights of described change, three-beam in described four bundle light is respectively the linearly polarized light of the diagonal that is parallel to square, when light beam is circularly polarized light, the micron/nano compounding period made comprises with the square two dimension micron-nanometer compounding period of horizontal nanometer striped with the two-dimentional micron-nanometer compounding period of the square of vertical nanometer striped, both are mutually nested, formed nested micron-nanometer compounding period, and relative close with the position with the vertical two-dimentional micron-nanometer compounding period of square of nanometer striped with the square of horizontal nanometer striped two dimension micron-nanometer compounding period.
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