CN104625416A - Method for electronic dynamic control of crystal silicon surface periodic micro-nano structures based on square hole assistance - Google Patents
Method for electronic dynamic control of crystal silicon surface periodic micro-nano structures based on square hole assistance Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
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Abstract
The invention relates to a method for electronic dynamic control of crystal silicon surface periodic micro-nano structures based on square hole assistance and belongs to the technical field of femtosecond laser application. The method is based on local transient electronic excitation dynamic control, and femtosecond laser linear polarization is focused through an objective lens and then is focused on the surface of a material through a square hole copper wire mesh to achieve various precise control of different surface periodic micro-nano structures; by controlling laser scanning speed and pulse energy, ablation of strip-shaped surface corrugated structures and multi-point array micro-nano structures is achieved; by controlling the relative positions of the laser polarization direction and the direction (x axis) of the edge of a square hole, direction control of the periodic micro-nano structures can be achieved; by effectively adjusting the included angle between the linear polarization laser direction and the direction (x axis) of the edge of the square hole, selective ablation of the crystal silicon surface periodic micro-nano structures is achieved. Compared with existing methods, the method has the advantages that surface processing precision and efficiency are improved effectively, and efficient and accurate form control of the surface periodic micro-nano structures is achieved.
Description
Technical field
The present invention relates to a kind of crystal silicon surface periodic micro-nano structure generation method, particularly a kind of regulation and control of the femtosecond laser based on square hole copper mesh auxiliary electron dynamic regulation crystal silicon surface micro-nano periodic structure generation method, belongs to femtosecond laser applied technical field.
Background technology
Solid material surface micro-nano structure is the key factor controlling material surface optics, the characteristic such as wetting, chemical, biological, and thus effectively regulable control solid material surface micro-nano structure becomes an emphasis studied.Along with the appearance of locked mode and amplifying technique, femtosecond laser technology obtains develop rapidly.Femtosecond laser surface micro-nano technology becomes a novelty and effective process for treating surface, can process the micro-nano structure of different shape, be widely used in the aspects such as photoelectron, bio-sensing, micro-nano fluid, biological medicine at the surface of solids.Femtosecond laser micro-nano technology has incomparable advantage compared with traditional micro-nano technology technology, is mainly manifested in can process any materials and comprise metal, semiconductor, transparent medium and polymer; Can process curved surface; The nanostructured in micro-nano regional extent can be processed.Because the ultra-short pulse width of femtosecond laser inhibits thermal diffusion process, so femtosecond laser can change surface topography and structure when not making a significant impact sub-surface layer, unique material surface micro-nano structure just can be obtained by controlled working parameter etc.
Single crystal silicon semiconductor can induce the surface micro-nano structure producing different shape after Gold Films Irradiated by Femtosecond Laser, as external waviness structure, microprotrusion structure etc., change the character such as the optics of its surfacing, electronics, can be widely used in photonic propulsion, photoelectronics, infrared source and Photobiology device.Because the interaction process of femtosecond laser and material is different from traditional manufacture method, extremely complicated, make the controlled working for crystal silicon surface micro-nano structure constrain the application of its reality.In contemporary optics research, controlling within the scope of micro-nano light and modulating is a great challenge, produces a form with only processing in the time range of work.The controlled working of effects on surface micro-nano structure can be realized, as photoetching technique can realize the controlled working of micro-nano structure by more auxiliary other manufacturing process.In document " Laser printing of silicon nanoparticles with resonant optical electric and magnetic responses ", the people such as Zywietz are by laser imprinted technology, adopt SOI material as trigger, femto-second laser pulse, as receiver, is acted on SOI material surface and is stamped on receiver sheet glass by the nano silicon particles of different size by substrate of glass.But the regulable control undertaken by modes such as auxiliary masks processing is still the control that a mask can only realize a kind of form.Control the ablation threshold of a little higher than material surface of femto-second laser pulse energy, material surface self assembly ablation under the effect of multiple-pulse femtosecond laser produces surface periodic micro-nano structure, and the mechanism of production of this self-assembled structures is that incident laser and surface plasma are interfered.The diffraction of light is as a critical nature of light wave character, and light, producing different diffraction patterns by different holes, is modulated light field again.This key property of light wave is applied to the control of solid material femtosecond laser induced surface micro-nano structure, the regulation and control that can realize different shape surface periodic micro-nano structure produce.Square hole copper mesh is assisted in solid substrate surface, by laser near-field diffraction regulation and control substrate surface laser irradiation region electron excitation density, the generation of laser excitation surface plasma is regulated and controled, thus the ablation affecting micro-nano structure produces, the regulation and control for surface periodic micro-nano structure form produce and provide possibility.
Summary of the invention
The object of the invention is the processing that can only realize a kind of form for solving existing single mask, the problem that effects on surface periodicity micro-nano structure variform carries out accurately efficient controlled working cannot be realized, provide a kind of femtosecond laser based on square hole auxiliary electron dynamic regulation to regulate and control crystal silicon surface periodic micro-nano structure generation method.
Thought of the present invention is based on Local Instantaneous electron excitation dynamic regulation, femtosecond laser linear polarization is utilized to focus on by square hole copper mesh the multiple accurate control that material surface can realize different surfaces periodicity micro-nano structure after object lens focus on: (1), by controlling the size of laser scanning speed and pulse energy, achieves the ablation of strip-like surface ripple struction and multiple spot array micro-nano structure; (2) control in the relative position property micro-nano structure performance period direction of laser polarization direction and square hole edge direction (x-axis) is controlled; (3) by effectively regulating linearly polarized laser direction and square hole edge direction (x-axis) angle, the selective ablation of crystal silicon surface periodic micro-nano structure is realized.Specific implementation method, linear polarization femto-second laser pulse after object lens focus on is excited instantaneous local electron density by auxiliary square diffraction by aperture regulation and control by irradiation zone base material, and then regulate and control exciting of surface plasma and being coupled between the two, realize the regulation and control of efficient accurate surface periodic micro-nano structure form.
The object of the invention is to be realized by following technology.
Based on the femtosecond laser regulation and control crystal silicon surface periodic micro-nano structure method of square hole auxiliary electron dynamic regulation, comprise the following steps:
Step one, is placed on sample substrate material surface by the tiling of the square hole copper mesh of certain size (if the length of side is 6.5 μm or 19 μm);
Step 2, correspondence selects suitable object lens to match with square hole size to make the spot size after focusing on used square hole copper mesh length of side size, and single focal beam spot only produces ablation to a square hole region;
Step 3, regulate laser energy: utilize half-wave plate-polarizer combination to regulate laser energy to make it to be about the half (after auxiliary square hole copper mesh, the ablation threshold of material will reduce) of not auxiliary copper mesh crystal silicon ablated surface threshold value, and laser energy can regulate continuously;
Step 4, regulates the angle β of linear polarization femto-second laser pulse polarization direction and square hole edge direction (x-axis);
Step 5, processed sample is fixed on sextuple mobile platform, by the observation of imaging CCD, regulates sextuple mobile platform to make the femto-second laser pulse after focusing on focus on sample substrate material surface through square hole;
Step 6, finds the processing rule that femto-second laser pulse directly writes regulation and control surface periodic micro-nano structure form;
Step 7, the processing rule of the straight write condition lower surface of the femtosecond laser found according to step 6 periodically micro-nano structure form, in conjunction with angle β needed for actual processing request (pulse energy, impulse speed and pulse frequency) Choice and process, processes.
The concrete grammar that described searching femto-second laser pulse directly writes the processing rule of regulation and control surface periodic micro-nano structure form is as follows:
(1) by regulating femto-second laser pulse energy and straight writing rate regulation and control surface periodic micro-nano structure form:
In a dynamic condition, namely processing mode is laser direct-writing, laser pulse and processing sample relative movement, setting laser pulse energy, pulse frequency, and keep in process pulse energy and pulse frequency constant.Also static line polarization femtosecond laser direction and square hole edge direction (x-axis) angle (0-90) is regulated to remain unchanged, under specific energy condition (1/2 substrate material surface ablation threshold), then, in certain speed range, the relative velocity of mobile platform and laser spot is continuously changed according to setting speed interval; Different straight writing rates makes the focused laser pulses energy of deposit in the base material unit are after through square hole different, can produce the surface periodic micro-nano structure of different shape in the ablation of crystal silicon substrate material surface;
Under described laser direct-writing condition, adjustment pulsed laser energy and relative moving speed adjustment surface periodic micro-nano structure morphological feature are: along with the increase gradually of laser direct-writing speed, first square hole overlay area forms the surface periodic ripple struction (direction is parallel to an edge of square hole) of linear, and the number of periodic line shape ripple struction increases gradually, after it increases to certain value, surface micro-nano structure changes periodic lattice structure into, and along with the increase of straight writing rate, count and increase progressively gradually until disappear.
(2) the ablation degree by regulating the femto-second laser polarized direction of linear polarization and square hole edge angle to regulate and control surface periodic micro-nano structure, produces selective ablation:
Under laser direct-writing condition, keep the energy size that () determines, by setting femto-second laser pulse frequency and laser direct-writing speed, the energy hole of material surface will be deposited to after laser light square hole a fixed value; Then, within the scope of 0≤β≤90 ° (to 90 ° of end from 0 °), irradiation is continuously changed to the femto-second laser polarized direction of linear polarization on crystal silicon surface and square hole edge angle according to set angle interval; The different different ablation degree shows in angle respective material surface goes out selective surface's micro-nano structure ablation of class cosine curve distribution;
Changing the feature that class cosine curve that femtosecond laser linear polarization and square hole edge angle present distributes under described laser direct-writing condition is: curve minimum point is ablation inhibition point, and peak is ablation point of maximum intensity, and minimum point is to peak ablation strength increase; Ablation point of maximum intensity corresponds to femtosecond laser linear polarization and is parallel to square hole edge, and ablation minimum point corresponds to femtosecond laser linear polarization along square hole diagonal; The corresponding angle value β of each ablation intensity level; Simultaneously according to described in (one), ablation under different angle β correspond to different surface periodic micro-nano structure forms, and the direction of linear periodic surface ripple struction with angle 45 ° for boundary, reverse (0 °-45 ° to 45 °-90 ° changes, linear micro-nano structure direction, by the square hole edge being parallel to side, 180 ° of deflections occurs angle).
As preferably, described base material is crystal silicon (111).
As preferably, described correspondence and the square hole copper mesh length of side size used select suitable object lens, adopt 4 × focusing objective len when the square hole copper mesh length of side is 6.5 μm, adopt focal length to be the planoconvex spotlight of 100mm when the square hole copper mesh length of side is 19 μm.
As preferably, β can realize the pulse polarization direction of linear polarization femtosecond laser by the adjustment of half-wave plate.
Beneficial effect
The inventive method, to be excited based near field diffraction pattern regulation and control substrate material surface Momentary electronic by auxiliary square hole copper mesh and dynamically control femtosecond laser induction crystal silicon surface periodic micro-nano structure form and ablation characteristics, efficiently can design accurately and process the surface periodic micro-nano structure of variform.The present invention directly writes processing method from femtosecond laser and starts with, and on substrate material surface, attachment has the metal copper mesh of square hole form, greatly reduces the ablation threshold of base material; By the regulation and control regulating the pulse energy being deposited on substrate material surface to achieve femtosecond laser self assembly induced surface periodic structure variform; The distribution character of class cosine curve is presented by the ablation characteristics regulating the femto-second laser polarized direction of linear polarization and square hole edge direction (x-axis) angle to achieve femtosecond laser self assembly induced surface periodicity micro-nano structure.Contrast prior art, the inventive method substantially increase material surface process machining accuracy and working (machining) efficiency, reduce working power, thus reduce energy consumption.The inventive method has vital using value at area information storage.
Accompanying drawing explanation
Fig. 1 is in specific embodiment, based on the processing index path of the femtosecond laser induction crystal silicon surface periodic micro-nano structure regulation and control that square hole copper mesh is assisted;
Label declaration: 1-femto-second laser; 2-first half-wave plate; 3-polarizer; 4-second half-wave plate; 5-speculum; 6-mechanical switch; 7-dichroscope; 8-beam splitter; 9-throws light on white light source; 10-condenser lens; 11-imaging CCD; 12-focusing objective len (object lens or planoconvex spotlight); 13-assists square hole copper mesh; 14-substrate samples; The sextuple mobile platform of 15-.
Detailed description of the invention
Below in conjunction with accompanying drawing and embodiment, the present invention is described further.
In present embodiment, the processing method of regulation and control femtosecond laser induction crystal silicon surface period micro-nano structure form, concrete processing light path as shown in Figure 1.Its processing light path is that femto-second laser 1 produces femto-second laser pulse, femto-second laser pulse is after the first half-wave plate 2, polarizer 3, second half-wave plate 4, through mechanical switch 6 after being reflected by the first speculum 5, surperficial to sample 14 through auxiliary copper mesh square hole 13 after focusing objective len 12 focuses on after being reflected by the second speculum 7, sample 14 to be processed is fixed on sextuple mobile platform 15; Illumination white light source 9, through beam splitter 8, dichroscope 7, through condenser lens 10 after incides in imaging CCD11 after being reflected by beam splitter.
The femto-second laser parameter adopted in experimentation is as follows: centre wavelength is 800nm, and pulse width is 50fs, and repetition rate is 1kHz, linear polarization; In experiment, sample to be processed is monocrystalline silicon (111).
The processing side of said system is as follows:
Adjustment light path, guarantees that laser incident direction is vertical with processed sample surface;
(1) square hole copper mesh assists the surface periodic micro-nano structure morphology control method controlled based on the straight writing rate of linear polarization femtosecond laser:
(1) adding half-wave plate in the optical path, fixing femtosecond laser linear polarization and square hole edge direction (x-axis) angle by regulating half-wave plate optical axis direction.
(2) square hole copper mesh (length of side is 6 μm or 19 μm) is placed in the surface of substrate crystal silicon (111) material and is fixed on by base material on sextuple mobile platform;
(3) mechanical switch Shutter is opened, by imaging CCD, the laser pulse after focusing is made through square hole copper mesh to material surface by focusing objective len (6.5 μm of square hole copper mesh adopt 4X focusing objective len, and 19 μm of square hole copper mesh adopt focal length to be the planoconvex spotlight of 100mm);
(4) fixed pulse energy is 1/2 crystal silicon threshold value, laser incident frequencies is set and programming Control mobile platform speed with control incide pulse energy in sample surface unit are;
(5) regulate laser direct-writing speed to increase to from 100 μm/s the surface periodic micro-nano structure form Rule adjusting that 1000 μm/s presents to be: along with the increase gradually of laser direct-writing speed, first square hole overlay area forms the surface periodic ripple struction (direction is parallel to an edge of square hole) of linear, and the number of periodic line shape ripple struction increases gradually, after it increases to certain value, surface micro-nano structure changes periodic lattice structure into, and along with the increase of straight writing rate, count and increase progressively gradually until disappear.
(6) basis is passed through to regulate femto-second laser pulse energy and straight writing rate regulation and control surface periodic micro-nano structure morphological method to pass through the straight writing rate femto-second laser pulse of adjustment processes different shape in the regulation and control of crystal silicon sample surface surface periodic micro-nano structure by square hole copper mesh;
(2) square hole copper mesh assists the surface periodic micro-nano structure ablation characteristics regulate and control method controlled based on the femto-second laser polarized direction of linear polarization and square hole limit angle:
(1) half-wave plate optical axis direction and square hole edge direction (x-axis) angle is regulated to obtain the linear polarization femto-second laser pulse of different laser polarization direction and square hole angular separation.
(2) (2), (3) process in () is repeated;
(3) laser incident frequencies is set and programming Control mobile platform speed with control incide pulse energy in sample surface unit are, the fixing straight writing rate of femtosecond laser, under the linear polarization femtosecond laser of different angle (β) directly writes use, produce ablation on the surface at crystal silicon;
(4) angle is changed from (to 90 ° of end from 0 °) change within the scope of 0 to 90 °, 10 ° is a step-length, femtosecond laser ablation crystal silicon surface presentation under different angle β goes out to present the selective ablation characteristics of the class cosine curve distribution of different ablation form: curve minimum point is ablation inhibition point (45 °), peak is ablation point of maximum intensity (0 ° and 90 °), and minimum point is to peak ablation strength increase.Ablation point of maximum intensity corresponds to femtosecond laser linear polarization and is parallel to square hole edge, and ablation minimum point corresponds to femtosecond laser linear polarization along square hole diagonal.The corresponding β value of each ablation intensity level.And the direction of ablation linear periodic surface ripple struction with angle 45 ° for boundary, reverse (0 °-45 ° to 45 °-90 ° changes, there are 180 ° of deflections by the square hole edge being parallel to side in linear micro-nano structure direction to angle).
(5) according to the ablation degree by regulating the femto-second laser polarized direction of linear polarization and square hole edge angle to regulate and control surface periodic micro-nano structure, produce selective ablative method, by regulating relative angle, femto-second laser pulse produces selective ablation by square hole copper mesh in crystal silicon sample surface and reaches ablation degree effect in various degree.
What above-mentioned fs-laser system adopted is the laser instrument that U.S.'s spectrum physics (Spectrum Physics) company produces, optical maser wavelength 800nm, pulse width 50fs, repetition rate 1KHz, pulse ceiling capacity 3mJ, light distribution is Gaussian, linear polarization.
Test sample is monocrystalline silicon (111).The linear polarization femtosecond laser of assisting based on square hole copper mesh directly writes the controlled working of regulation and control crystal silicon surface periodic micro-nano structure form as shown in the illustration (auxiliary square hole copper mesh 13 and substrate samples 14) of Fig. 1 middle and lower part.Set coordinate system in figure, x-axis direction is parallel to an edge of square hole, and β angle is femtosecond laser linear polarization and square hole edge (x-axis) angular separation, and E represents femtosecond laser linear polarization.
Adopt femtosecond laser direct writing technology, square hole copper mesh is placed in processed sample substrate crystal silicon on the surface, material surface is focused on through square hole copper mesh, based on the regulation and control of the instantaneous local electronic dynamic implement crystal silicon material surface periodic micro-nano structure form in square hole near field diffraction pattern controlled material surface after the femtosecond laser line focus object lens of linear polarization.
Periodicity micro-nano structure form paramodulation involved by the present embodiment is divided into the form controlled based on laser direct-writing sweep speed regulate and regulate based on the ablation characteristics that femtosecond laser linear polarization and square hole edge direction angle regulate, and lower mask body introduces the implementation method of these two kinds of modes:
(1) under particular energy, the energy being deposited on material surface unit are by controlling the straight writing rate of femtosecond laser and then adjustment realizes the control of surface periodic micro-nano structure form.Be specially square hole copper mesh and elect the length of side 19 μm as, adopt 100mm planoconvex spotlight, at 0.1J/cm
2energy density under, pulse recurrence frequency 1000Hz, laser direct-writing speed from 100 μm/s with 100 for interval increases to 1000 μm/s, retention wire polarization direction is parallel to x-axis (edge of square hole), by regulating and controlling through the exciting characteristic of focusing femto-second laser pulse to the Local Instantaneous electronic Dynamic in irradiation zone specific region after square hole, monocrystalline silicon is made directly to write the surface periodic micro-nano structure obtaining different shape under femto-second laser pulse effect.Along with the increase gradually of laser direct-writing speed, first square hole overlay area forms the surface periodic ripple struction (direction is parallel to an edge of square hole) of linear, and the number of periodic line shape ripple struction increases gradually, after it increases to certain value, surface micro-nano structure changes periodic lattice structure into, and along with the increase of straight writing rate, count and increase progressively gradually until disappear.
(2) theoretical according to dynamic control, adopt different laser rays polarization directions and square hole edge direction (x-axis) angle dynamically to control ablation characteristics and the form of crystal silicon material surface periodic micro-nano structure to the local electronic of material.At 0.1J/cm
2energy density under, arranging the straight writing rate of femtosecond laser is 100 μm/s, laser frequency 1000kz, (10 ° is an interval) changes from 0 ° to 90 ° to regulate linear polarization and square hole edge direction (x-axis) angle β, by carrying out the ablation characteristics of controlling changing material surface to the Local Instantaneous electronic Dynamic exciting characteristic of irradiating surface region material, selective surface's periodically micro-nano structure ablation generation under making crystal silicon material obtain special angle β condition under femto-second laser pulse directly writes use, ablation characteristics (area of the surface periodic micro-nano structure) Changing Pattern of class cosine curve is presented from 0 ° to 90 °, curve minimum point is ablation inhibition point (45 °), peak is ablation point of maximum intensity (0 ° and 90 °), minimum point is to peak ablation strength increase.Ablation point of maximum intensity corresponds to femtosecond laser linear polarization and is parallel to square hole edge, and ablation minimum point corresponds to femtosecond laser linear polarization along square hole diagonal.The corresponding β value of each ablation intensity level.Simultaneously according to (1), the surface periodic micro-nano structure form that different ablation degree is corresponding different.
Claims (5)
1., based on a square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterized in that, comprise the steps:
Step one, is placed on sample substrate surface by the tiling of the square hole copper mesh of certain size;
Step 2, the corresponding square hole copper mesh length of side size with using selects suitable object lens, and to make the spot size after focusing on match with square hole size, single focal beam spot only produces ablation to a square hole region;
Step 3, regulates laser energy: utilize half-wave plate-polarizer combination to regulate laser energy to make it to be about the half of not auxiliary copper mesh crystal silicon ablated surface threshold value, and laser energy can regulate continuously;
Step 4, regulates the angle β of linear polarization femto-second laser pulse polarization direction and square hole edge direction (x-axis);
Step 5, processed sample is fixed on sextuple mobile platform, by the observation of imaging CCD, regulates sextuple mobile platform to make the femto-second laser pulse after focusing on focus on sample substrate material surface through square hole;
Step 6, finds the processing rule that femto-second laser pulse directly writes regulation and control surface periodic micro-nano structure form;
Step 7, the processing rule of the straight write condition lower surface of the femtosecond laser found according to step 6 periodically micro-nano structure form, in conjunction with angle β needed for actual processing request (pulse energy, impulse speed and pulse frequency) Choice and process, processes.
2. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterized in that: the concrete grammar that described searching femto-second laser pulse directly writes the processing rule of regulation and control surface periodic micro-nano structure form is as follows:
(1) by regulating femto-second laser pulse energy and straight writing rate regulation and control surface periodic micro-nano structure form:
In a dynamic condition, namely processing mode is laser direct-writing, laser pulse and processing sample relative movement, setting laser pulse energy, pulse frequency, and keep in process pulse energy and pulse frequency constant.Also static line polarization femtosecond laser direction and square hole edge direction (x-axis) angle (0-90) is regulated to remain unchanged, under specific energy condition (1/2 substrate material surface ablation threshold), then, in certain speed range, the relative velocity of mobile platform and laser spot is continuously changed according to setting speed interval; Different straight writing rates makes the focused laser pulses energy of deposit in the base material unit are after through square hole different, can produce the surface periodic micro-nano structure of different shape in the ablation of crystal silicon substrate material surface;
Under described laser direct-writing condition, adjustment pulsed laser energy and relative moving speed adjustment surface periodic micro-nano structure morphological feature are: along with the increase gradually of laser direct-writing speed, first square hole overlay area forms the surface periodic ripple struction (direction is parallel to an edge of square hole) of linear, and the number of periodic line shape ripple struction increases gradually, after it increases to certain value, surface micro-nano structure changes periodic lattice structure into, and along with the increase of straight writing rate, count and increase progressively until disappear gradually;
(2) the ablation degree by regulating the femto-second laser polarized direction of linear polarization and square hole edge angle to regulate and control surface periodic micro-nano structure, produces selective ablation:
Under laser direct-writing condition, keep the energy size that () determines, by setting femto-second laser pulse frequency and laser direct-writing speed, the energy hole of material surface will be deposited to after laser light square hole a fixed value; Then, within the scope of 0≤β≤90 ° (to 90 ° of end from 0 °), irradiation is continuously changed to the femto-second laser polarized direction of linear polarization on crystal silicon surface and square hole edge angle according to set angle interval; The different different ablation degree shows in angle respective material surface goes out selective surface's micro-nano structure ablation of class cosine curve distribution;
Changing the feature that class cosine curve that femtosecond laser linear polarization and square hole edge angle present distributes under described laser direct-writing condition is: curve minimum point is ablation inhibition point, and peak is ablation point of maximum intensity, and minimum point is to peak ablation strength increase; Ablation point of maximum intensity corresponds to femtosecond laser linear polarization and is parallel to square hole edge, and ablation minimum point corresponds to femtosecond laser linear polarization along square hole diagonal; The corresponding angle value β of each ablation intensity level; Simultaneously according to described in (one), ablation under different angle β correspond to different surface periodic micro-nano structure forms, and the direction of linear periodic surface ripple struction with angle 45 ° for boundary, reverse (0 °-45 ° to 45 °-90 ° changes, linear micro-nano structure direction, by the square hole edge being parallel to side, 180 ° of deflections occurs angle).
3. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterized in that: described base material is crystal silicon (111).
4. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterized in that: described correspondence and the square hole copper mesh length of side size used select suitable object lens, adopt 4 × focusing objective len when the square hole copper mesh length of side is 6.5 μm, adopt focal length to be the planoconvex spotlight of 100mm when the square hole copper mesh length of side is 19 μm.
5. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterized in that: β can realize the pulse polarization direction of linear polarization femtosecond laser by the adjustment of half-wave plate.
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