CN104625416B - Based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method - Google Patents
Based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method Download PDFInfo
- Publication number
- CN104625416B CN104625416B CN201410848351.8A CN201410848351A CN104625416B CN 104625416 B CN104625416 B CN 104625416B CN 201410848351 A CN201410848351 A CN 201410848351A CN 104625416 B CN104625416 B CN 104625416B
- Authority
- CN
- China
- Prior art keywords
- square hole
- laser
- nano structure
- ablation
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention relates to a kind of based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, belong to femtosecond laser applied technical field。The inventive method is based on Local Instantaneous electron excitation dynamic regulation, utilize femtosecond laser linear polarization to focus on material surface by square hole copper mesh after object lens focus on and realize the multiple accurate control of different surfaces periodically micro-nano structure: by controlling the size of laser scanning speed and pulse energy, it is achieved the ablation of strip-like surface ripple struction and multiple spot array micro-nano structure；Control the control of laser polarization direction and the relative position property micro-nano structure performance period direction of square hole edge direction (x-axis)；By effectively regulating linearly polarized laser direction and square hole edge direction (x-axis) angle, it is achieved the selectivity ablation of crystal silicon surface periodic micro-nano structure。Contrasting existing method, the present invention is effectively increased machining accuracy and the working (machining) efficiency of surface treatment, it is achieved the regulation and control of efficiently accurate surface periodic micro-nano structure form。
Description
Technical field
The present invention relates to a kind of crystal silicon surface periodic micro-nano structure and generate method, regulate and control crystal silicon surface micro-nano periodic structure particularly to a kind of femtosecond laser based on square hole copper mesh auxiliary electron dynamic regulation and generate method, belong to femtosecond laser applied technical field。
Background technology
Solid material surface micro-nano structure is the key factor controlling the characteristics such as material surface optics, moistening, chemistry, biology, thus effective regulable control solid material surface micro-nano structure becomes the emphasis of a research。Along with the appearance of locked mode and amplifying technique, femtosecond laser technology obtains and develops rapidly。Femtosecond laser surface micro-nano technology becomes a novelty and effective process for treating surface, can process the micro-nano structure of different shape at the surface of solids, be widely used in the aspects such as photoelectron, bio-sensing, micro-nano fluid, biological medicine。Femtosecond laser micro-nano technology has incomparable advantage compared with traditional micro-nano technology technology, is mainly manifested in and can process any materials and include metal, quasiconductor, transparent medium and polymer；Curved surface can be processed；The nanostructured in micro-nano regional extent can be processed。Owing to the ultra-short pulse width of femtosecond laser inhibits thermal diffusion process, so femtosecond laser can change surface topography and structure when sub-surface layer not being made a significant impact, it is obtained with the material surface micro-nano structure of uniqueness by controlling machined parameters etc.。
Single crystal silicon semiconductor can induce the surface micro-nano structure producing different shape after Gold Films Irradiated by Femtosecond Laser, such as external waviness structure, microprotrusion structure etc., change the character such as the optics of its surfacing, electronics, can be widely applied in photonic propulsion, optoelectronics, infrared source and Photobiology device。Owing to the interaction process of femtosecond laser Yu material is different from traditional manufacture method, extremely complex so that the processing that controls for crystal silicon surface micro-nano structure constrains the application of its reality。In contemporary optics research, light being controlled within the scope of micro-nano and modulates is a great challenge, produces a form with being only capable of processing in the time range of work。Process by assisting some other manufacturing process can realize the control to surface micro-nano structure, as photoetching technique can realize the control processing of micro-nano structure。In document " Laserprintingofsiliconnanoparticleswithresonantopticalel ectricandmagneticresponses ", Zywietz et al. passes through laser imprinted technology, adopt SOI material as trigger, femto-second laser pulse, as receptor, is acted on SOI material surface and is stamped on receptor sheet glass by various sizes of nano silicon particles by substrate of glass。But the regulable control processing undertaken by modes such as auxiliary masks is remained as a mask and can only realize the control of a kind of form。Control the ablation threshold of a little higher than material surface of femto-second laser pulse energy, material surface self assembly ablation under the effect of multiple-pulse femtosecond laser produces surface periodic micro-nano structure, and the mechanism of production of this self-assembled structures is that incident laser is interfered with surface plasma。Diffraction of light is as a critical nature of light wave property, and light can produce different diffraction patterns by different holes, and light field is carried out re-modulation。This key property of light wave is applied to the control of solid material femtosecond laser induction surface micro-nano structure, it may be achieved the regulation and control of different shape surface periodic micro-nano structure produce。Square hole copper mesh is assisted in solid substrate surface, substrate surface laser irradiation region electron excitation density is regulated and controled by laser near-field diffraction, the generation of laser excitation surface plasma is regulated and controled, thus the ablation affecting micro-nano structure produces, the regulation and control for surface periodic micro-nano structure form produce to provide possibility。
Summary of the invention
It is an object of the invention to can only realize the processing of a kind of form for solving existing single mask, the problem that cannot realize carrying out surface periodic micro-nano structure variform accurately efficiently controlling processing, it is provided that a kind of femtosecond laser based on square hole auxiliary electron dynamic regulation regulates and controls crystal silicon surface periodic micro-nano structure and generates method。
Idea of the invention is that based on Local Instantaneous electron excitation dynamic regulation, utilize femtosecond laser linear polarization to focus on material surface by square hole copper mesh after object lens focus on and can realize the multiple accurate control of different surfaces periodically micro-nano structure: (1) is by controlling the size of laser scanning speed and pulse energy, it is achieved that the ablation of strip-like surface ripple struction and multiple spot array micro-nano structure；(2) control of laser polarization direction and the relative position property micro-nano structure performance period direction of square hole edge direction (x-axis) is controlled；(3) by effectively regulating linearly polarized laser direction and square hole edge direction (x-axis) angle, it is achieved the selectivity ablation of crystal silicon surface periodic micro-nano structure。Specific implementation method, linear polarization femto-second laser pulse after object lens focus on is illuminated substrate areas material by auxiliary square diffraction by aperture regulation and control and excites instantaneous local electron density, and then regulate and control exciting of surface plasma and coupling between the two, it is achieved the regulation and control of efficiently accurate surface periodic micro-nano structure form。
It is an object of the invention to be realized by techniques below。
Femtosecond laser based on square hole auxiliary electron dynamic regulation regulates and controls crystal silicon surface periodic micro-nano structure method, comprises the following steps:
Step one, tiles the square hole copper mesh of certain size (if the length of side is 6.5 μm or 19 μm) and is placed on sample substrate material surface；
Step 2, and the square hole copper mesh length of side size used selects suitable object lens so that the spot size after focusing on matches with square hole size for correspondence, and a square hole region is only produced ablation by single focal beam spot；
Step 3, regulate laser energy: utilize half-wave plate-polaroid combination to regulate laser energy so as to be about the half (after auxiliary square hole copper mesh, the ablation threshold of material will reduce) not assisting copper mesh crystal silicon ablated surface threshold value, and laser energy can continuously adjust；
Step 4, regulates the angle β of linear polarization femto-second laser pulse polarization direction and square hole edge direction (x-axis)；
Step 5, processed sample is fixed on sextuple mobile platform, by the observation of imaging CCD, regulates sextuple mobile platform and makes the femto-second laser pulse after focusing on focus on sample substrate material surface through square hole；
Step 6, finds the processing rule of femto-second laser pulse direct write regulation and control surface periodic micro-nano structure form；
Step 7, according to the processing rule of the femtosecond laser direct write condition lower surface periodically micro-nano structure form that step 6 finds, selects the required angle β of processing in conjunction with actual processing request (pulse energy, impulse speed and pulse frequency), is processed。
The concrete grammar of the processing rule of described searching femto-second laser pulse direct write regulation and control surface periodic micro-nano structure form is as follows:
(1) by regulating femto-second laser pulse energy and direct write speed regulation surface periodic micro-nano structure form:
In a dynamic condition, namely processing mode is laser direct-writing, laser pulse with processing sample relative movement, set pulsed laser energy, pulse frequency, and in the course of processing keep pulse energy and pulse frequency constant。Regulate and fixing linear polarization femtosecond laser direction remains unchanged with square hole edge direction (x-axis) angle (0-90), under specific energy condition (1/2 substrate material surface ablation threshold), then, in certain speed range, the relative velocity of mobile platform and laser spot is changed continuously according to setting speed interval；Different direct write speed makes the focused laser pulses energy of deposit in the base material unit are after passing through square hole different, it is possible to produce the surface periodic micro-nano structure of different shape in crystal silicon substrate material surface ablation；
When described laser direct-writing, regulate pulsed laser energy and relative moving speed adjustment surface periodic micro-nano structure morphological characteristic is: along with being gradually increased of laser direct-writing speed, square hole overlay area is initially formed the surface periodic ripple struction (being oriented parallel to an edge of square hole) of linear, and the bar number of periodic line shape ripple struction is gradually increased, after it increases to certain value, surface micro-nano structure is changed into periodic lattice structure, and along with the increase of direct write speed, count and be incremented by gradually until disappearing。
(2) by regulating the ablation degree in the femto-second laser polarized direction of linear polarization and square hole edge angle regulation and control surface periodic micro-nano structure, selectivity ablation is produced:
When laser direct-writing, keep (one) energy size of determining, by setting femto-second laser pulse frequency and laser direct-writing speed, the energy hole of material surface will be deposited to after laser light square hole a fixed value；Then (start to 90 ° of end from 0 °) within the scope of 0≤β≤90 °, change the irradiation femto-second laser polarized direction of linear polarization and square hole edge angle to crystal silicon surface continuously according to set angle interval；The different ablation degree shows in different angle respective material surfaces goes out selective surface's micro-nano structure ablation of class cosine curve distribution；
The feature changing the class cosine curve distribution that femtosecond laser linear polarization and square hole edge angle present when described laser direct-writing is: curve minimum point is ablation inhibition point, and peak is ablation point of maximum intensity, and minimum point is to peak ablation strength increase；Ablation point of maximum intensity is parallel to square hole edge corresponding to femtosecond laser linear polarization, ablation minimum point corresponding to femtosecond laser linear polarization along square hole diagonal；The corresponding angle value β of each ablation intensity level；Simultaneously according to described in (one), ablation under different angle β correspond to different surface periodic micro-nano structure forms, and the direction of linear periodic surface ripple struction is with angle 45 ° for boundary, reverse (0 °-45 ° to 45 °-90 ° changes, linear micro-nano structure direction, by the square hole edge being parallel to side, 180 ° of deflections occurs angle)。
As preferably, described base material is crystal silicon (111)。
As preferably, described correspondence selects suitable object lens with the square hole copper mesh length of side size used, and adopts 4 × focusing objective len when the square hole copper mesh length of side is 6.5 μm, and adopting focal length when the square hole copper mesh length of side is 19 μm is the planoconvex lens of 100mm。
As preferably, β can realize the pulse polarization direction of linear polarization femtosecond laser by the adjustment of half-wave plate。
Beneficial effect
The inventive method, dynamically control femtosecond laser induction crystal silicon surface periodic micro-nano structure form and ablation characteristics by assisting square hole copper mesh to excite based near field diffraction pattern regulation and control substrate material surface Momentary electronic, efficiently can design and process the surface periodic micro-nano structure of variform accurately。The present invention starts with from femtosecond laser direct write processing method, and on substrate material surface, attachment has the metal copper mesh of square hole form, greatly reduces the ablation threshold of base material；The regulation and control of femtosecond laser self assembly induction surface period structure variform are achieved by regulating the pulse energy being deposited on substrate material surface；The ablation characteristics achieving femtosecond laser self assembly induction surface periodic micro-nano structure by regulating the femto-second laser polarized direction of linear polarization and square hole edge direction (x-axis) angle presents the distribution character of class cosine curve。Contrast prior art, the inventive method substantially increasing machining accuracy and the working (machining) efficiency of material surface process, reducing working power, thus reducing energy consumption。The inventive method has vital using value at area information storage。
Accompanying drawing explanation
Fig. 1 is in specific embodiment, based on the processing index path of the femtosecond laser induction crystal silicon surface periodic micro-nano structure regulation and control of square hole copper mesh auxiliary；
Label declaration: 1-femto-second laser；2-the first half-wave plate；3-polaroid；4-the second half-wave plate；5-reflecting mirror；6-mechanical switch；7-dichroic mirror；8-beam splitter；9-illuminates white light source；10-condenser lens；11-imaging CCD；12-focusing objective len (object lens or planoconvex lens)；13-assists square hole copper mesh；14-substrate samples；15-6 DOF mobile platform。
Detailed description of the invention
Below in conjunction with accompanying drawing and embodiment, the present invention is described further。
In present embodiment, the processing method of regulation and control femtosecond laser induction crystal silicon surface period micro-nano structure form, concrete processing light path is as shown in Figure 1。Its processing light path is that femto-second laser 1 produces femto-second laser pulse, femto-second laser pulse is after the first half-wave plate 2, polaroid the 3, second half-wave plate 4, through mechanical switch 6 after being reflected by the first reflecting mirror 5, through auxiliary copper mesh square hole 13 to sample 14 surface after over-focusing object lens 12 focus on after being reflected by the second reflecting mirror 7, sample 14 to be processed is fixed on sextuple mobile platform 15；Illumination white light source 9, through beam splitter 8, dichroic mirror 7, incides in imaging CCD11 after being reflected by beam splitter after condenser lens 10。
The femto-second laser parameter adopted in experimentation is as follows: centre wavelength is 800nm, and pulse width is 50fs, and repetition rate is 1kHz, linear polarization；In experiment, sample to be processed is monocrystal silicon (111)。
The processing side of said system is as follows:
Adjust light path, it is ensured that laser light incident direction is vertical with machined sample surface；
(1) square hole copper mesh auxiliary is based on the surface periodic micro-nano structure morphology control method of linear polarization femtosecond laser direct write speed controlling:
(1) half-wave plate is added in the optical path, by regulating the fixing femtosecond laser linear polarization of half-wave plate optical axis direction and square hole edge direction (x-axis) angle。
(2) square hole copper mesh (length of side is 6 μm or 19 μm) is placed in the surface of substrate crystal silicon (111) material and base material is fixed on sextuple mobile platform；
(3) mechanical switch Shutter is opened, by imaging CCD, make the laser pulse after focusing through square hole copper mesh to material surface by focusing objective len (6.5 μm of square hole copper mesh adopt 4X focusing objective lens, and 19 μm of square hole copper mesh adopt focal lengths to be the planoconvex lens of 100mm)；
(4) fixed pulse energy is 1/2 crystal silicon threshold value, arranges laser light incident frequency programming Control mobile platform speed to control to incide pulse energy in sample surface unit are；
(5) regulate laser direct-writing speed to increase to the 1000 μm/s surface periodic micro-nano structure form Rule adjusting presented from 100 μm/s and be: along with being gradually increased of laser direct-writing speed, square hole overlay area is initially formed the surface periodic ripple struction (being oriented parallel to an edge of square hole) of linear, and the bar number of periodic line shape ripple struction is gradually increased, after it increases to certain value, surface micro-nano structure is changed into periodic lattice structure, and along with the increase of direct write speed, count and be incremented by gradually until disappearing。
(6) according to the surface periodic micro-nano structure being processed different shape by regulating femto-second laser pulse energy and direct write speed regulation surface periodic micro-nano structure morphological method by regulating direct write speed femto-second laser pulse by square hole copper mesh in the regulation and control of crystal silicon sample surface；
(2) the surface periodic micro-nano structure ablation characteristics regulation and control method that square hole copper mesh auxiliary controls based on the femto-second laser polarized direction of linear polarization and square hole limit angle:
(1) regulate half-wave plate optical axis direction and obtain the linear polarization femto-second laser pulse of different laser polarization direction and square hole angular separation from square hole edge direction (x-axis) angle。
(2) (2), (3) process in () is repeated；
(3) laser light incident frequency programming Control mobile platform speed are set to control to incide pulse energy in sample surface unit are, fixing femtosecond laser direct write speed, under the linear polarization femtosecond laser direct write effect of different angles (β), crystal silicon surface produces ablation；
(4) angle is changed from (starting to 90 ° of end) change within the scope of 0 to 90 ° from 0 °, 10 ° is a step-length, femtosecond laser ablation crystal silicon surface under different angle β presents the selectivity ablation characteristics of the class cosine curve distribution of different ablation form: curve minimum point is ablation inhibition point (45 °), peak is ablation point of maximum intensity (0 ° and 90 °), and minimum point is to peak ablation strength increase。Ablation point of maximum intensity is parallel to square hole edge corresponding to femtosecond laser linear polarization, ablation minimum point corresponding to femtosecond laser linear polarization along square hole diagonal。The corresponding β value of each ablation intensity level。And the direction of ablation linear periodic surface ripple struction is with angle 45 ° for boundary, reverse (0 °-45 ° to 45 °-90 ° changes, linear micro-nano structure direction, by the square hole edge being parallel to side, 180 ° of deflections occurs angle)。
(5) according to the ablation degree by regulating the femto-second laser polarized direction of linear polarization and square hole edge angle regulation and control surface periodic micro-nano structure, produce selectivity ablative method, by regulating relative angle, femto-second laser pulse produces selectivity ablation by square hole copper mesh in crystal silicon sample surface and reaches ablation degree effect in various degree。
What above-mentioned fs-laser system adopted is the laser instrument of U.S.'s spectrum physics (SpectrumPhysics) company production, optical maser wavelength 800nm, pulse width 50fs, repetition rate 1KHz, pulse ceiling capacity 3mJ, light distribution is Gaussian, linear polarization。
Test sample is monocrystal silicon (111)。Control based on the linear polarization femtosecond laser direct write regulation and control crystal silicon surface periodic micro-nano structure form of square hole copper mesh auxiliary is processed shown in the illustration (auxiliary square hole copper mesh 13 and substrate samples 14) such as Fig. 1 middle and lower part。Set coordinate system in figure, x-axis is oriented parallel to an edge of square hole, and β angle is femtosecond laser linear polarization and square hole edge (x-axis) angular separation, and E represents femtosecond laser linear polarization。
Adopt femtosecond laser direct writing technology, square hole copper mesh is placed on processed sample substrate crystal silicon surface, material surface is focused on through square hole copper mesh, based on the regulation and control of square hole near field diffraction pattern controlled material surface instantaneous local electronic dynamic implement crystal silicon material surface periodic micro-nano structure form after the femtosecond laser line focus object lens of linear polarization。
Periodicity micro-nano structure form paramodulation involved by the present embodiment is divided into the form controlled based on laser direct-writing scanning speed to regulate and based on the ablation characteristics adjustment that femtosecond laser linear polarization and square hole edge direction angle regulate, introduces the implementation of both modes in detail below:
(1) under particular energy, the energy being deposited on material surface unit are by controlling femtosecond laser direct write speed and then adjustment realizes the control of surface periodic micro-nano structure form。It is specially square hole copper mesh and elects the length of side 19 μm as, adopt 100mm planoconvex lens, at 0.1J/cm2Energy density under, pulse recurrence frequency 1000Hz, laser direct-writing speed increases to 1000 μm/s from 100 μm/s with 100 for interval, linear polarization is kept to be parallel to x-axis (edge of square hole), by the femto-second laser pulse that focuses on after square hole, the exciting characteristic of the Local Instantaneous electronic Dynamic in irradiation zone specific region is regulated and controled so that monocrystal silicon obtains the surface periodic micro-nano structure of different shape under direct write femto-second laser pulse effect。Along with being gradually increased of laser direct-writing speed, square hole overlay area is initially formed the surface periodic ripple struction (being oriented parallel to an edge of square hole) of linear, and the bar number of periodic line shape ripple struction is gradually increased, after it increases to certain value, surface micro-nano structure is changed into periodic lattice structure, and along with the increase of direct write speed, count and be incremented by gradually until disappearing。
(2) theoretical according to dynamic control, adopt different laser rays polarization directions and square hole edge direction (x-axis) angle that the local electronic of material dynamically controls ablation characteristics and the form of crystal silicon material surface periodic micro-nano structure。At 0.1J/cm2Energy density under, arranging femtosecond laser direct write speed is 100 μm/s, laser frequency 1000kz, regulate linear polarization and square hole edge direction (x-axis) angle β (10 ° the is an interval) change from 0 ° to 90 °, by the Local Instantaneous electronic Dynamic exciting characteristic of irradiating surface region material being carried out the ablation characteristics of controlling changing material surface, selective surface's periodically micro-nano structure ablation when making crystal silicon material obtain special angle β under femto-second laser pulse direct write effect produces, ablation characteristics (area of the surface periodic micro-nano structure) Changing Pattern of class cosine curve is presented from 0 ° to 90 °, curve minimum point is ablation inhibition point (45 °), peak is ablation point of maximum intensity (0 ° and 90 °), minimum point is to peak ablation strength increase。Ablation point of maximum intensity is parallel to square hole edge corresponding to femtosecond laser linear polarization, ablation minimum point corresponding to femtosecond laser linear polarization along square hole diagonal。The corresponding β value of each ablation intensity level。Simultaneously according to (1), the surface periodic micro-nano structure form that different ablation degree is corresponding different。
Claims (5)
1. one kind based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterised in that comprise the steps:
Step one, tiles the square hole copper mesh of certain size and is placed on sample substrate surface；
Step 2, the object lens that square hole copper mesh length of side size selection that is corresponding and that use is suitable, so that the spot size after focusing on matches with square hole size, a square hole region is only produced ablation by single focal beam spot；
Step 3, regulates laser energy: utilize half-wave plate-polaroid combination to regulate laser energy so as to be about the half not assisting copper mesh crystal silicon ablated surface threshold value, and laser energy can continuously adjust；
Step 4, regulates the angle β of linear polarization femto-second laser pulse polarization direction and x-axis direction, square hole edge；
Step 5, processed sample is fixed on sextuple mobile platform, by the observation of imaging CCD, regulates sextuple mobile platform and makes the femto-second laser pulse after focusing on focus on sample substrate material surface through square hole；
Step 6, finds the processing rule of femto-second laser pulse direct write regulation and control surface periodic micro-nano structure form；
Step 7, according to the processing rule of the femtosecond laser direct write condition lower surface periodically micro-nano structure form that step 6 finds, selects the required angle β of processing in conjunction with actual processing request, is processed。
2. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterised in that: the concrete grammar of the processing rule of described searching femto-second laser pulse direct write regulation and control surface periodic micro-nano structure form is as follows:
(1) by regulating femto-second laser pulse energy and direct write speed regulation surface periodic micro-nano structure form:
In a dynamic condition, namely processing mode is laser direct-writing, laser pulse with processing sample relative movement, set pulsed laser energy, pulse frequency, and in the course of processing keep pulse energy and pulse frequency constant；Regulate and fixing linear polarization femtosecond laser direction remains unchanged with x-axis angular separation, square hole edge, under 1/2 substrate material surface ablation threshold energy condition, then, in certain speed range, the relative velocity of mobile platform and laser spot is changed continuously according to setting speed interval；Different direct write speed makes the focused laser pulses energy of deposit in the base material unit are after passing through square hole different, it is possible to produce the surface periodic micro-nano structure of different shape in crystal silicon substrate material surface ablation；
When described laser direct-writing, regulate pulsed laser energy and relative moving speed adjustment surface periodic micro-nano structure morphological characteristic is: along with being gradually increased of laser direct-writing speed, square hole overlay area is initially formed the surface periodic ripple struction of linear, and the bar number of periodic line shape ripple struction is gradually increased, after it increases to certain value, surface micro-nano structure is changed into periodic lattice structure, and along with the increase of direct write speed, counts and be incremented by gradually until disappearing；
(2) by regulating the ablation degree in the femto-second laser polarized direction of linear polarization and square hole edge angle regulation and control surface periodic micro-nano structure, selectivity ablation is produced:
When laser direct-writing, keep (one) energy size of determining, by setting femto-second laser pulse frequency and laser direct-writing speed, the energy hole of material surface will be deposited to after laser light square hole a fixed value；Then, within the scope of 0≤β≤90 °, the irradiation femto-second laser polarized direction of linear polarization and square hole edge angle to crystal silicon surface is changed continuously according to set angle interval；The different ablation degree shows in different angle respective material surfaces goes out selective surface's micro-nano structure ablation of class cosine curve distribution；
The feature changing the class cosine curve distribution that femtosecond laser linear polarization and square hole edge angle present when described laser direct-writing is: curve minimum point is ablation inhibition point, and peak is ablation point of maximum intensity, and minimum point is to peak ablation strength increase；Ablation point of maximum intensity is parallel to square hole edge corresponding to femtosecond laser linear polarization, ablation minimum point corresponding to femtosecond laser linear polarization along square hole diagonal；The corresponding angle value β of each ablation intensity level；Simultaneously according to described in (one), the ablation under different angle β correspond to different surface periodic micro-nano structure forms, and the direction of linear periodic surface ripple struction is with angle 45 ° for boundary, reverses。
3. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterised in that: described base material is crystal silicon (111)。
4. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterized in that: described correspondence selects suitable object lens with the square hole copper mesh length of side size used, adopt 4 × focusing objective len when the square hole copper mesh length of side is 6.5 μm, adopting focal length when the square hole copper mesh length of side is 19 μm is the planoconvex lens of 100mm。
5. one according to claim 1 is based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method, it is characterised in that: β can realize the pulse polarization direction of linear polarization femtosecond laser by the adjustment of half-wave plate。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410848351.8A CN104625416B (en) | 2014-12-29 | 2014-12-29 | Based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410848351.8A CN104625416B (en) | 2014-12-29 | 2014-12-29 | Based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104625416A CN104625416A (en) | 2015-05-20 |
| CN104625416B true CN104625416B (en) | 2016-06-22 |
Family
ID=53204898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410848351.8A Active CN104625416B (en) | 2014-12-29 | 2014-12-29 | Based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104625416B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107904577A (en) * | 2017-11-20 | 2018-04-13 | 北京理工大学 | A kind of controllable surface preparation method of wellability based on dynamic control |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105499792B (en) * | 2016-01-14 | 2017-07-18 | 北京理工大学 | Based on dual wavelength femtosecond laser dynamic control silicon face nanometer column preparation method |
| CN105537771B (en) * | 2016-01-21 | 2018-07-06 | 北京理工大学 | Surface anisotropy pattern processing method based on dynamic control |
| CN105784670B (en) * | 2016-03-02 | 2019-05-10 | 北京理工大学 | Method based on dynamic control metal surface wellability to improve Raman detection |
| CN107931866B (en) * | 2017-11-10 | 2019-10-29 | 吉林大学 | The device and method of pattern processing is carried out in ceramic ball surface using femtosecond laser |
| CN107971628A (en) * | 2017-11-22 | 2018-05-01 | 北京工业大学 | Method based on femtosecond laser dynamic control customization copper surface periodic structure |
| CN108015410B (en) * | 2017-12-01 | 2020-01-17 | 北京工业大学 | Amorphous Ge based on femtosecond laser inductionmSbnTekMethod for preparing crystalline nano structure by thin film |
| CN108568594B (en) * | 2018-03-22 | 2019-11-29 | 北京工业大学 | Method based on class plasmonic lenses effect regulation crystal silicon external waviness structure |
| CN112355483B (en) * | 2020-10-30 | 2021-08-24 | 北京理工大学 | Method for preparing submicron concentric rings on silicon surface by femtosecond laser |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1762641A (en) * | 2005-08-31 | 2006-04-26 | 江苏大学 | Laser micro-processing method and device based on liquid crystal mask technology |
| CN1966203A (en) * | 2006-11-20 | 2007-05-23 | 华中科技大学 | Femtosecond laser amorphism fine machining method for amorphous alloy |
| CN201316869Y (en) * | 2008-12-12 | 2009-09-30 | 重庆立洋机电工程有限公司 | Feeding device of laser cutting machine |
| CN201616448U (en) * | 2009-11-17 | 2010-10-27 | 武汉帝尔激光科技有限公司 | Laser scribing-line light-blocking device for solar silicon chip |
| CN101905381A (en) * | 2010-07-05 | 2010-12-08 | 大连理工大学 | Microstructure-type excimer laser delaminated processing method and device of ceramic material sealing ring |
| EP2314412A2 (en) * | 2009-10-22 | 2011-04-27 | Ewag AG | Laser machining apparatus and method for forming a surface on an unfinished product |
| CN103658993A (en) * | 2013-12-11 | 2014-03-26 | 北京理工大学 | Crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7605343B2 (en) * | 2006-05-24 | 2009-10-20 | Electro Scientific Industries, Inc. | Micromachining with short-pulsed, solid-state UV laser |
| JP2013207170A (en) * | 2012-03-29 | 2013-10-07 | Disco Abrasive Syst Ltd | Method for dividing device wafer |
-
2014
- 2014-12-29 CN CN201410848351.8A patent/CN104625416B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1762641A (en) * | 2005-08-31 | 2006-04-26 | 江苏大学 | Laser micro-processing method and device based on liquid crystal mask technology |
| CN1966203A (en) * | 2006-11-20 | 2007-05-23 | 华中科技大学 | Femtosecond laser amorphism fine machining method for amorphous alloy |
| CN201316869Y (en) * | 2008-12-12 | 2009-09-30 | 重庆立洋机电工程有限公司 | Feeding device of laser cutting machine |
| EP2314412A2 (en) * | 2009-10-22 | 2011-04-27 | Ewag AG | Laser machining apparatus and method for forming a surface on an unfinished product |
| CN201616448U (en) * | 2009-11-17 | 2010-10-27 | 武汉帝尔激光科技有限公司 | Laser scribing-line light-blocking device for solar silicon chip |
| CN101905381A (en) * | 2010-07-05 | 2010-12-08 | 大连理工大学 | Microstructure-type excimer laser delaminated processing method and device of ceramic material sealing ring |
| CN103658993A (en) * | 2013-12-11 | 2014-03-26 | 北京理工大学 | Crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107904577A (en) * | 2017-11-20 | 2018-04-13 | 北京理工大学 | A kind of controllable surface preparation method of wellability based on dynamic control |
| CN107904577B (en) * | 2017-11-20 | 2019-11-12 | 北京理工大学 | A kind of surface preparation method that the wellability based on dynamic control is controllable |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104625416A (en) | 2015-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104625416B (en) | Based on square hole auxiliary electron dynamic regulation crystal silicon surface periodic micro-nano structure method | |
| CN103658993B (en) | Crystal silicon surface femtosecond laser selective ablation method based on electron dynamic control | |
| CN105499792B (en) | Based on dual wavelength femtosecond laser dynamic control silicon face nanometer column preparation method | |
| Rekstyte et al. | Nanoscale precision of 3D polymerisation via polarisation control | |
| Duocastella et al. | Bessel and annular beams for materials processing | |
| CN108568594B (en) | Method based on class plasmonic lenses effect regulation crystal silicon external waviness structure | |
| CN106735947A (en) | A kind of method of efficiently controllable processing bulk silicon micro-nano structure | |
| Kaakkunen et al. | Water-assisted femtosecond laser pulse ablation of high aspect ratio holes | |
| CN104625417B (en) | The method of optimal control nickel surface pattern based on dynamic control | |
| CN105108342B (en) | Method for preparing two-dimensional metallic photonic crystal structure in large area through femtosecond laser direct writing | |
| JP2010142862A (en) | Method for producing nano-periodic structure on surface of dielectric material | |
| US9233435B2 (en) | Apparatus and method for the interference patterning of planar samples | |
| JP2008126283A (en) | Manufacturing method of microstructure and exposure method | |
| TW201026420A (en) | Method and apparatus for forming grooves in the surface of a polymer layer | |
| JP2013000752A (en) | Laser beam machining apparatus | |
| JP2008036641A (en) | Laser beam machining apparatus and method | |
| CN109277692B (en) | Femtosecond laser double-pulse regulation and control method for polydimethylsiloxane surface micro-nano structure | |
| Indrisiunas et al. | Direct laser beam interference patterning technique for fast high aspect ratio surface structuring | |
| JP2009056467A (en) | Apparatus and method for laser beam machining | |
| CN105537771B (en) | Surface anisotropy pattern processing method based on dynamic control | |
| KR101049381B1 (en) | Hybrid laser processing device using ultrasonic vibration | |
| US8569648B2 (en) | Apparatus and system for improving depth of focus | |
| CN110142510A (en) | Laser soldering device and its method for metal nano element | |
| JP2008049380A (en) | Method for forming microstructure of surface by laser beam | |
| JP2008036687A (en) | Surface machining method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |