CN102866580A - Nanolithography method and nanolithography device - Google Patents
Nanolithography method and nanolithography device Download PDFInfo
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- CN102866580A CN102866580A CN2012103652065A CN201210365206A CN102866580A CN 102866580 A CN102866580 A CN 102866580A CN 2012103652065 A CN2012103652065 A CN 2012103652065A CN 201210365206 A CN201210365206 A CN 201210365206A CN 102866580 A CN102866580 A CN 102866580A
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Abstract
The invention discloses a nanolithography method and a nanolithography device in the technical field of nanolithography. The device comprises a femtosecond laser device, a light transmittance base plate, a photoetching mask plate, photoresist and a substrate. A specific super-diffraction limit graph is formed on the photoetching mask plate through the femtosecond laser device; a plasma excimer excitation structure on the upper surface of the photoetching mask plate is changed, and an exposure wavelength is adjusted by controlling the material of the photoetching mask plate, so that the shape, the distribution and the size of the super-diffraction limit graph can be controlled; moreover, a two-photon absorption phenomenon of the photoresist is introduced; and the line width of an exposure graph of the photoresist is controlled by controlling the power of a femtosecond laser exposure light source.
Description
Technical field
The present invention relates to the nanoimprinting technology field, particularly a kind of nano-photoetching method and device.
Background technology
Nano-photoetching is a very important step in the micro-nano process technology.Yet because the existence of optical diffraction limit, nano-photoetching is reduction of device size, raising machining precision further.At present, the exposure wavelength that dwindles in the photoetching is the most effective solution.Exposure wavelength in the nano-photoetching further is reduced to 193nm of today from 365 initial nanometers (i line).People are also in the correlation technique of studying profound ultraviolet wavelength (EUV, 13nm), to satisfy the requirement of device size in the future simultaneously.When reducing wavelength, people have also found out many technological means and have been aided with the machining precision of improving present photoetching, such as phase-shift mask technology, oil immersion photoetching, secondary imaging technology etc.Then, along with reducing of wavelength, the technical barrier that relates in the nano-photoetching is also more and more, and research and development, production cost also increase rapidly thereupon.Take liquid immersion lithography as example.The high index of refraction immersion liquid is known from experience the pollution photoresist, affects following process.Bubble in the immersion liquid also can make litho pattern generation deformation.The introducing of immersion liquid is also so that whole work flow complicated simultaneously.In order to realize high-resolution imaging, optical lens group used in the liquid immersion lithography is bulky, involve great expense.In addition, the 193nm light source of efficient stable also is the technical barrier that needs solution.
Surface plasma (Surface Plasmons, SPs) refers to the electronics dilatational wave of propagating along the metal surface in the electronics of the free vibration of metal surface existence and photon interaction generation.The interface large two kinds of semiinfinites, that isotropic medium consists of, the specific inductive capacity of medium is positive real number, the specific inductive capacity of metal is that real part is the plural number of bearing.According to the maxwell equation, to compare with the light wave of same frequency, surface plasma has larger wave vector, i.e. less effective wavelength, its field distribution height local is at the metal interface place.Because its peculiar electromagnetic property, surface plasma is an important research direction of the sub-subject of present nano photoelectric, it has been subject to comprising the physicist, chemist's material scholar, a plurality of field personages' such as biologist great concern is breaking through diffraction limit, the data storage, microscope, the aspects such as solar cell and bio-sensing have widely research.
In recent years, about utilizing the surface plasmons effect in nano-photoetching, to break through optical diffraction limit research by follow-up story, for example utilize the interference realization of surface plasma much smaller than the conoscope image of wavelength dimension, the two bundle input light of 365nm are incident on the metallic film at a certain angle by prism, will form stable interference fringe at the lower surface of metal.Its width of fringe is about 100nm.Yet be subject to employed material and wavelength, photoetching striped yardstick and cycle that the method realizes can not further dwindle.Limited its application in nano-photoetching.
Two-photon absorption is a kind of third-order non-linear effect.Common this third-order non-linear effect need to could occur under very high peak power level, such as the ultrashort light pulse that utilizes femto-second laser to produce.Compare with the Single Photon Absorption phenomenon, the two-photon absorption phenomenon of photoresist has two outstanding features: 1. the two-photon absorption probability of photoresist and incident intensity square is directly proportional; 2. two-photon absorption has very high requirement to incident optical power.By the power of control spot size and hot spot, can form by the two-photon absorption effect figure of super diffraction at photoresist.Therefore, people have carried out a lot of researchs in two-photon processing, and have obtained the micro/nano-scale figure of a lot of three-dimensionals.Yet the at present two-photon of main flow processing is based on the mode that Laser Focusing is directly write mostly, and is very consuming time and unstable when large-area graphs is made, and can't be applicable to the large-scale production of large-area chips.
Summary of the invention
The technical matters that (one) will solve
The technical problem to be solved in the present invention is: how to solve the problem that obtains super diffraction limit striped under the condition of large tracts of land preparation by surface plasmons effect and two-photon absorption photoetching.
(2) technical scheme
For solving the problems of the technologies described above, the invention provides a kind of nanometer lithographic equipment, it is characterized in that this device comprises:
Substrate is used for obtaining super diffraction limit striped;
Be positioned at the photoresist on the substrate, be used for the figure that lithography mask version forms is carried out compress and record;
Be positioned at the lithography mask version on the photoresist, be used for mask lithography;
Be positioned at the transparent substrates on the lithography mask version, be used for generating lithography mask version;
Femto-second laser is as the exposure source that carries out photoetching.
The material of described lithography mask version comprises Au and alloy, Ag and alloy thereof, Al and alloy thereof, Zn and alloy thereof, Pt and alloy thereof, Ti and alloy thereof, metallic ceramics, semiconductor material, Graphene or silit.
Described lithography mask version has the surface plasmons incentive structure, and described surface plasmons incentive structure is used to form photoengraving pattern.
Described surface plasmons incentive structure comprises bar shaped grating, concentric-circle grating, array of circular apertures or square hole array.
Described lithography mask version has the surface plasmons effect.
Described photoresist has the two-photon absorption effect.
A kind of method for preparing super diffraction limit striped is characterized in that the method may further comprise the steps:
S1: form the thin layer of setting thickness at described transparent substrates, and obtain described lithography mask version at described thin layer generation surface plasmons incentive structure;
S2: the above photoresist of spin coating in described substrate, and place on the hot plate and toast;
S3: described lithography mask version is contacted with described photoresist, and shine described transparent substrates with described femto-second laser, obtain super diffraction limit striped in described substrate.
The described thin layer of setting thickness in described transparent substrates formation specifically comprises: form the thin layer of setting thickness at described transparent substrates by magnetron sputtering, evaporation or electron beam evaporation.
Describedly generate the surface plasmons incentive structure at described thin layer and specifically comprise: generate the surface plasmons incentive structure by focused-ion-beam lithography or reactive ion etching at described thin layer.
It is described that to obtain super diffraction limit striped in described substrate be to realize by output power and the time shutter of controlling described femto-second laser.。
(3) beneficial effect
1. the present invention can form at lithography mask version the figure (bar shaped array, round dot matrix, square dot matrix, triangle dot matrix, donut array etc.) of specific super diffraction limit; And by regulation and control photo etched mask plate material, change lithography mask version upper surface plasmon incentive structure (bar shaped grating, concentric-circle grating, array of circular apertures, square hole array etc.) and regulate exposure wavelength, realize to super diffraction limit figure shape, distribution, reach the regulation and control of big or small (about 50nm).
2. the present invention has realized utilizing the surface plasma bulk effect to form the graphical distribution of super diffraction limit; By control exposure dose (output power of femto-second laser and time shutter) the exposure striped size and shape that two-photon absorption forms is regulated and control; Further overcome the impact of diffraction limit by changing exposure wavelength.
Description of drawings
Fig. 1 is synoptic diagram of the present invention;
Fig. 2 is the interference fringe example that Fig. 1 forms;
Fig. 3 is the synoptic diagram that femto-second laser shines smooth transparent substrates;
Fig. 4 be the interference fringe field intensity that encouraged by the surface plasmons effect, field intensity square and the two-photon absorption threshold value between concern synoptic diagram; Dotted line is the space distribution of distribution of light intensity after the normalization; Solid line be distribution of light intensity square space distribution; Dotted line is the threshold value of two-photon absorption;
Fig. 5 is the curve that changes with exposure wavelength in the cycle of the super diffraction pattern that produced by the surface plasmons effect; Solid line is that fringe period is along with the change curve of exciting light source wavelength; Dotted line is that the contrast of interference fringe is along with the curve of exciting light source wavelength;
Fig. 6 is that the cycle of super diffraction pattern is with the curve of the change in dielectric constant of mask plate; Solid line is that fringe period is along with the change curve of mask plate material dielectric constant; Dotted line is that the contrast of interference fringe is along with the change curve of mask plate material dielectric constant;
Fig. 7 is that metal construction is the synoptic diagram of super transparent aperture;
Fig. 8 is the lithography mask version of Fig. 7;
Fig. 9 is that metal construction is the synoptic diagram of narrow slit structure;
Figure 10 is the lithography mask version of Fig. 9;
Figure 11 is the synoptic diagram that increases anisotropic band;
Figure 12 is mask plate and the photoresist synoptic diagram when keeping at a certain distance away;
Figure 13 is that metal construction is the synoptic diagram of Orthogonal Periodic grating;
Figure 14 is lithography mask version and the interference pattern example of Figure 13;
Figure 15 is that metal construction is the synoptic diagram of annulus periodic optical grating;
Figure 16 is lithography mask version and the interference pattern example of Figure 15;
The implication of each sign is in the accompanying drawing: the 1-femto-second laser; The smooth transparent substrates of 2-; The 3-lithography mask version; The 4-photoresist; The 5-substrate; The 6-metal construction; The interference fringe that 7-is formed by surface plasmons; The 8-anisotropic band; The square dot matrix interference pattern of 9-; 10-annulus interference pattern; The 11-lens.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment is elaborated.Should be emphasized that following explanation only is exemplary, rather than in order to limit the scope of the invention and to use.
The inventive system comprises following components: substrate is used for obtaining super diffraction limit striped; Be positioned at the photoresist on the substrate, be used for the figure that lithography mask version forms is carried out compress and record; Be positioned at the lithography mask version on the photoresist, be used for mask lithography; Be positioned at the transparent substrates on the lithography mask version, be used for generating lithography mask version.Femtosecond laser, the exposure source as carrying out photoetching can cause the two-photon absorption in the photoresist.
The material of lithography mask version comprises Au and alloy, Ag and alloy thereof, Al and alloy thereof, Zn and alloy thereof, Pt and alloy thereof, Ti and alloy thereof, metallic ceramics, semiconductor material, Graphene or silit.Lithography mask version has the surface plasmons incentive structure, and the surface plasmons incentive structure is used to form photoengraving pattern.The surface plasmons incentive structure comprises bar shaped grating, concentric-circle grating, array of circular apertures or square hole array.Lithography mask version has the surface plasmons effect.
Photoresist has the two-photon absorption effect.
Utilize the method for the super diffraction limit striped of apparatus of the present invention preparation may further comprise the steps:
S1: form the thin layer of setting thickness at transparent substrates, and obtain lithography mask version at thin layer generation surface plasmons incentive structure;
Forming the thin layer of setting thickness at transparent substrates specifically comprises: form the thin layer of setting thickness at transparent substrates by magnetron sputtering, evaporation or electron beam evaporation.
Generating the surface plasmons incentive structure at thin layer specifically comprises: generate the surface plasmons incentive structure by focused-ion-beam lithography or reactive ion etching at thin layer.
S2: photoresist in spin coating in the substrate, and place on the hot plate and toast;
S3: lithography mask version is contacted with photoresist, and shine transparent substrates with femto-second laser, obtain super diffraction limit striped in substrate.By control exposure dose (output power * time shutter of exposure dose=femto-second laser), realize the live width of photoetching striped is regulated and control flexibly.
Many the present invention are described in detail by the following examples:
Embodiment 1:
Fig. 1 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Wherein, the implication of each mark is: the 1-femto-second laser; The smooth transparent substrates of 2-; The 3-lithography mask version has the surface plasmons effect; The 4-photoresist has the two-photon absorption effect, (being specially negative photoresist among this embodiment, such as SU-82000, SU-82002); The 5-substrate; 6-metal construction (concrete structure is the periodicity metal grating in the present embodiment).
At first by method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporations.Then prepare metal construction among Fig. 2 (periodically metal grating) 6 by methods such as focused-ion-beam lithography, reactive ion etching RIE, thereby prepare the lithography mask version 3 with surface plasmons effect.The cycle of metal grating is 480nm, and dutycycle is 50%.The spacing of two groups of gratings is decided according to the actual requirements among Fig. 2.Simultaneously, the spin coating last layer has the photoresist (minus) 4 of two-photon absorption effect in substrate 5, such as SU8 (Micro Chem).The substrate 5 of the good photoresist 4 of spin coating was placed on the hot plate 90 degree bakings 2 minutes.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with both close contacts.Utilize wavelength to be 800nm, average power is 600mW, and repetition frequency is 1kHz, and pulsewidth is to expose to smooth transparent substrates 2 after the laser of femto-second laser 1 emission of 150fs focuses on through lens 11, and as shown in Figure 3, the time shutter was 10 seconds.The interference fringe field intensity that forms by irradiation lithography mask version 3 is shown in Fig. 4 dotted line.And the striped that the two-photon effect forms is shown in Fig. 4 solid line.Realize to being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value, shown in Fig. 4 dotted line by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 placed on the hot plate 95 degree bakings 3 minutes.The substrate 5 that scribbles photoresist 4 was soaked 35 seconds and 10 seconds in SU8 developer solution and isopropyl alcohol successively, thereby obtain super diffraction limit striped.
Embodiment 2:
Fig. 1 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.At first, by method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporations.Then prepare metal construction among Fig. 2 (periodically metal grating) 6 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.The spacing of the cycle of metal grating and two groups of gratings is decided according to the actual requirements among Fig. 2.Simultaneously, the photoresist (eurymeric) 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Utilize wavelength to be 800nm, average power is 600mW, and repetition frequency is 1kHz, and pulsewidth is to expose to smooth transparent substrates 2 after the laser of femto-second laser 1 emission of 150fs focuses on through lens 11, as shown in Figure 3.The interference fringe field intensity that forms by irradiation lithography mask version 3 is shown in Fig. 4 dotted line.And the striped that the two-photon effect forms is shown in Fig. 4 solid line.Exposure power and time shutter decide according to concrete etching condition.Realize to being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value, shown in Fig. 4 dotted line by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is soaked certain hour successively in developer solution and stop bath, thereby obtain super diffraction limit striped.
Embodiment 3:
Fig. 1 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.The wavelength of the femto-second laser that uses 1 among this embodiment can be set according to actual conditions.By realizing changing wavelength, realize the coupling of film plate material specific inductive capacity and photoresist specific inductive capacity, thereby realize further dwindling of litho pattern cycle, as shown in Figure 5.According to selected optical source wavelength, go out corresponding structural parameters by theoretical calculation Design, such as golden film thickness, metal grating cycle etc.By method certain thickness gold thin film layers on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporations.Then prepare metal construction among Fig. 2 (periodically metal grating) 6 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.The spacing of the cycle of metal grating and dutycycle and two groups of gratings is decided according to the actual requirements among Fig. 2.Simultaneously, the photoresist 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Expose to smooth transparent substrates 2 after laser process lens 11 focusing with selected femto-second laser 1 emission, as shown in Figure 3, exposure power and time shutter decide according to concrete etching condition.Realize being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is developed, thereby obtain super diffraction limit striped.
Embodiment 4:
Fig. 1 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Lithography mask version 3 material therefors that have the surface plasma bulk effect among Fig. 1 can be: the metals such as gold, silver, aluminium, titanium, zinc, metallic ceramics, semiconductor material, Graphene or silit etc.By selecting different lithography mask version plate materials, be implemented in the coupling of lithography mask version material dielectric constant and photoresist specific inductive capacity under the specific wavelength, thereby realize further dwindling of litho pattern cycle, as shown in Figure 6.According to the optical parametric of selected material, go out corresponding film plate structure parameter by theoretical calculation Design, such as golden film thickness, metal grating cycle etc.By method certain thickness certain material thin layers on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporations.Then prepare metal construction among Fig. 2 (periodically metal grating) 6 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.Among Fig. 2 the cycle of metal grating and, the spacing of dutycycle group and two groups of gratings decides according to the actual requirements.Simultaneously, the photoresist 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Utilize wavelength to expose to lens 11 for the femto-second laser 1 of 800nm with certain power, expose to smooth transparent substrates 2 after focusing on through lens 11, the time shutter was 10 seconds.Exposure power and time shutter decide according to concrete etching condition.Realize being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is soaked certain hour successively in developer solution and stop bath, thereby obtain super diffraction limit striped.
Embodiment 5:
Fig. 7 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporation at first.Then prepare metal construction among Fig. 8 (present embodiment is super transparent aperture, the metal grating in the difference precedent) 6 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.The super transparent aperture of illustrating among Fig. 8 be shaped as circle, in fact also can be the geometries such as rectangle, triangle according to its shape of design, yardstick in several nanometers to the hundreds of nanometer scale.Concrete hole parameter (pore size, aperture cycle etc.) is decided according to actual conditions.Simultaneously, the photoresist 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Utilize wavelength to shine lens 11 for the femto-second laser 1 of 800nm with certain power, expose to smooth transparent substrates 2 after focusing on through lens 11, exposure power and time shutter decide according to concrete etching condition.Realize being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is soaked certain hour successively in developer solution and developer solution, thereby obtain super diffraction limit striped.
Embodiment 6:
Fig. 9 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporation at first.Then prepare metal construction (present embodiment is narrow slit structure) 6 among Figure 10 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.The yardstick of the waveguide of narrow slit structure in several nanometers to the hundreds of nanometer scale.Concrete slit parameter is decided according to actual conditions.Simultaneously, the photoresist 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Utilize wavelength to expose to lens 11 for the femto-second laser 1 of 800nm with certain power, expose to smooth transparent substrates 2 after focusing on through lens 11, exposure power and time shutter decide according to concrete etching condition.Realize being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is soaked certain hour successively in developer solution and stop bath, thereby obtain super diffraction limit striped.
Embodiment 7:
Figure 11 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporation at first.Then prepare metal construction among Fig. 2 (periodically metal grating) 6 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.The cycle of metal grating is 480nm, and dutycycle is 50%.The spacing of two groups of gratings is decided according to the actual requirements among Fig. 2.Then utilize the anisotropic band 8 about the method growth 10nm such as magnetron sputtering, evaporation, electron beam evaporation, vapour deposition at the gold thin film layer, the material of this layer can be metal or high refractive index medium (titanium dioxide, silicon nitride etc.).Simultaneously, the spin coating last layer has the photoresist (minus) 4 of two-photon absorption effect in substrate 5, such as SU8 (MicroChem).The substrate 5 of the good photoresist 4 of spin coating was placed on the hot plate 90 degree bakings 2 minutes.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Utilize wavelength to be 800nm, average power is 600mW, and repetition frequency is 1kHz, and pulsewidth is to expose to smooth transparent substrates 2 after the laser of femto-second laser 1 emission of 150fs focuses on through lens 11, and the time shutter was 10 seconds.The substrate 5 that will scribble subsequently photoresist 4 placed on the hot plate 95 degree bakings 3 minutes.The substrate 5 that scribbles photoresist 4 was soaked 35 seconds and 10 seconds in SU8 developer solution and isopropyl alcohol successively, thereby obtain super diffraction limit striped.
Embodiment 8:
Figure 12 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporation at first.Then prepare metal construction (optical grating construction) 6 among Fig. 2 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.Concrete grating parameter is decided according to actual conditions.Simultaneously, the photoresist 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, lithography mask version 3 keeps at a certain distance away with photoresist 4, and namely the clear area between flat transparent substrate 2 and the gold thin film layer among Figure 12 is concrete apart from deciding according to actual conditions.Utilize wavelength to expose to condenser lens 11 for the femto-second laser 1 of 800nm with certain power, expose to smooth transparent substrates 2 after focusing on through lens 11, exposure power and time shutter decide according to concrete etching condition.Super diffraction pattern on the lithography mask version 3 is projected on the photoresist 4, makes photoresist 4 distortion.Realize being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is soaked certain hour successively in developer solution and developer solution, thereby obtain super diffraction limit striped.
Embodiment 9:
Figure 13 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporation at first.Then prepare metal construction among Figure 14 (being the Orthogonal Periodic metal grating in the present embodiment) 6 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.The spacing of the cycle of metal grating 6, dutycycle and two groups of gratings is decided according to the actual requirements among Figure 14.Among Fig. 86 is circular holes of making on the metallic film, and light can shine on the photoresist 4 by this circular hole.And 9 among Figure 14 is light spot shapes of the photoresist 4 interior formation below lithography mask version 3.The principle of the structure formation hot spot of Fig. 8 and Figure 14 is different.
Simultaneously, the photoresist 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Utilize wavelength to expose to lens 11 for the femto-second laser 1 of 800nm with certain power, expose to smooth transparent substrates 2 after focusing on through lens 11, as shown in Figure 3.The square dot matrix interference pattern 9 that forms by irradiation lithography mask version 3 as shown in figure 14.Exposure power and time shutter decide according to concrete etching condition.Realize being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is soaked certain hour successively in developer solution and stop bath, thereby obtain super diffraction limit striped.
Embodiment 10:
Figure 15 has illustrated the nano-photoetching synoptic diagram of one embodiment of the invention.Method gold thin film layers about 100nm on flat transparent substrate 2 is grown such as magnetron sputtering, evaporation, electron beam evaporation at first.Then prepare metal construction among Figure 16 (present embodiment for periodically annulus metal grating) 6 by methods such as focused-ion-beam lithography, RIE etchings, thereby prepare the lithography mask version 3 with surface plasma bulk effect.The spacing of the cycle of circular metal grating, dutycycle and two groups of gratings is decided according to the actual requirements among Figure 16.Simultaneously, the photoresist 4 that the spin coating last layer has the two-photon absorption effect in substrate 5.The substrate 5 of the good photoresist 4 of spin coating placed on the hot plate toast, baking temperature and time decide according to etching condition.Then the lithography mask version 3 for preparing is inverted in photoresist 4 tops, with lithography mask version 3 and photoresist 4 close contacts.Utilize wavelength to expose to lens 11 for the femto-second laser 1 of 800nm with certain power, through the polarization direction that exposes to smooth transparent substrates 2(this moment of employed femtosecond laser after lens 11 focusing multiple method to set up is arranged: example 1. is for the same chip, 90-degree rotation after exposure once, again exposure; The circularly polarized light of example 2. usefulness exposes to chip etc.), as shown in Figure 3.10 shapes as shown in figure 16 by annulus interference pattern (super diffractogram) that irradiation institute mask plate forms.Exposure power and time shutter decide according to concrete etching condition.Realize being positioned at the regulation and control of the striped size and shape on the two-photon absorption threshold value by changing exposure power and time shutter.The substrate 5 that will scribble subsequently photoresist 4 places on the hot plate toasts, and baking temperature and time decide according to etching condition.The substrate 5 that scribbles photoresist 4 is soaked certain hour successively in developer solution and stop bath, thereby obtain super diffraction limit striped.
The present invention is in conjunction with surface plasmons effect in photoresist two-photon absorption effect and the photoetching film version, to realize breaking through the nano-photoetching method of diffraction limit, take full advantage of the advantage of surface plasma bulk effect and two-photon absorption effect, realize the litho pattern of super diffraction limit.
The invention provides a kind of in conjunction with surface plasma excimer effect in photoresist two-photon absorption effect and the photoetching film version, realize to break through the nano-photoetching method of diffraction limit.Certainly; the present invention can also have other various embodiments; in the situation that does not deviate from spirit of the present invention and essence thereof; those familiar with ordinary skill in the art work as can make according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (10)
1. a nanometer lithographic equipment is characterized in that, this device comprises:
Substrate is used for obtaining super diffraction limit striped;
Be positioned at the photoresist on the substrate, be used for the figure that lithography mask version forms is carried out compress and record;
Be positioned at the lithography mask version on the photoresist, be used for mask lithography;
Be positioned at the transparent substrates on the lithography mask version, be used for generating lithography mask version;
Femto-second laser is as the exposure source that carries out photoetching.
2. device according to claim 1, it is characterized in that the material of described lithography mask version comprises Au and alloy, Ag and alloy thereof, Al and alloy thereof, Zn and alloy thereof, Pt and alloy thereof, Ti and alloy thereof, metallic ceramics, semiconductor material, Graphene or silit.
3. device according to claim 1 is characterized in that, described lithography mask version has the surface plasmons incentive structure, and described surface plasmons incentive structure is used to form photoengraving pattern.
4. device according to claim 3 is characterized in that, described surface plasmons incentive structure comprises bar shaped grating, concentric-circle grating, array of circular apertures or square hole array.
5. device according to claim 1 is characterized in that, described lithography mask version has the surface plasmons effect.
6. device according to claim 1 is characterized in that, described photoresist has the two-photon absorption effect.
7. method of utilizing the super diffraction limit striped of the described device of claim 1 to 6 preparation is characterized in that the method may further comprise the steps:
S1: form the thin layer of setting thickness at described transparent substrates, and obtain described lithography mask version at described thin layer generation surface plasmons incentive structure;
S2: the above photoresist of spin coating in described substrate, and place on the hot plate and toast;
S3: described lithography mask version is contacted with described photoresist, shine described transparent substrates with described femto-second laser, obtain super diffraction limit striped in described substrate.
8. method according to claim 7 is characterized in that, the described thin layer of setting thickness in described transparent substrates formation specifically comprises: form the thin layer of setting thickness at described transparent substrates by magnetron sputtering, evaporation or electron beam evaporation.
9. method according to claim 7, it is characterized in that, describedly generate the surface plasmons incentive structure at described thin layer and specifically comprise: generate the surface plasmons incentive structure by focused-ion-beam lithography or reactive ion etching at described thin layer.
10. method according to claim 7 is characterized in that, described to obtain super diffraction limit striped in described substrate be to realize by output power and the time shutter of controlling described femto-second laser.
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