CN109031884A - The production method of micro-nano structure and for the system in the production method - Google Patents
The production method of micro-nano structure and for the system in the production method Download PDFInfo
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- CN109031884A CN109031884A CN201810864075.2A CN201810864075A CN109031884A CN 109031884 A CN109031884 A CN 109031884A CN 201810864075 A CN201810864075 A CN 201810864075A CN 109031884 A CN109031884 A CN 109031884A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
Abstract
The present invention provides the production method of micro-nano structure and for the system in the production method, the production method is comprising steps of provide a substrate, and production forms phase-change thin film over the substrate；Non-linear saturated absorption film is covered on the phase-change thin film；The non-linear saturated absorption film is passed through using laser, and the phase-change thin film is exposed according to predetermined pattern；Developed using developer solution to the phase-change thin film after exposure, while the non-linear saturated absorption film being removed.The method on phase-change thin film on the one hand by covering non-linear saturated absorption film, so that laser is passed through the non-linear saturated absorption film, phase-change thin film is exposed to make micro-nano structure, concentrates laser beam more, hot spot is reduced, the precision of micro-nano structure obtained is improved；On the other hand it selects femtosecond laser as laser source, avoids the fuel factor of laser from influencing non-exposed areas, to further improve the precision of micro-nano structure.
Description
Technical field
The present invention relates to the production method of the manufacture technology field of micro-nano structure, especially micro-nano structure and it is used for the production
System in method.
Background technique
In the prior art, laser writing technology is a kind of common micro-nano structure manufacture craft, and can use intensity can
The laser countermeasure (s) corrosion material of tune become the exposure of dosage, makes erosion resistant after development, is formed on the surface of erosion resistant
The micro-nano structure of given pattern.But the optics that current laser writing technology is limited to the spot size of direct write laser beam spreads out
Emitter-base bandgap grading limit, is restricted the precision for the micro-nano structure to be formed, which can only generally make micro-nano of the precision at 1 micron or more
Structure, which has limited its applications in terms of nano-scale structures production and device fabrication arts.
The hot lithographic technique of laser is another common micro-nano structure manufacture craft, by anti-aging drug mechanism by photic
Exposure is changed to thermotropic exposure, using the fuel factor of laser, undergoes phase transition specific Etching mask material, is covered due to described
Mold materials has different resistance to corrosions afterwards before phase change, to make it that can form the micro-nano knot of given pattern after development
Structure.However during heating the mask material by laser, thermal diffusion effect can expand thermotropic exposure and cause the phase transformation
The region that film is undergone phase transition, so that the nanoprocessing resolution ratio of the program reduces the precision drop for forming micro-nano structure in other words
It is low.
Therefore, in order to obtain the micro-nano structure with higher precision, it is necessary to propose other solutions.
Summary of the invention
In view of this, the purpose of the present invention is to provide the production method of micro-nano structure and for being in the production method
System, to solve the above problems.
In order to achieve the above purpose, present invention employs the following technical solutions:
Present invention firstly provides a kind of production method of micro-nano structure, the production method is comprising steps of provide a lining
Bottom, and production forms phase-change thin film over the substrate；Non-linear saturated absorption film is covered on the phase-change thin film；Using swash
Light passes through the non-linear saturated absorption film, and is exposed according to predetermined pattern to the phase-change thin film；Utilize developer solution pair
Phase-change thin film after exposure develops, while the non-linear saturated absorption film being removed.
Preferably, the laser is femtosecond laser.
Preferably, the non-linear saturated absorption film is being passed through using laser, and according to predetermined pattern to described mutually thinning
In the step of film is exposed, the laser intensity of the femtosecond laser is reduced, and improves the light application time of the femtosecond laser.
Preferably, the non-linear saturated absorption film is graphene film.
Preferably, the method that non-linear saturated absorption film is covered on the phase-change thin film specifically includes step: providing one
Copper-based bottom makes graphene film on copper-based bottom；The spin coating polymethyl methacrylate layers on the graphene film；Using
Copper-based bottom described in corrosive liquid erosion removal；The graphene film and the polymethyl methacrylate layers are immersed into deionized water
In cleaned；The graphene film is taken out from the deionized water using the substrate for being formed with the phase-change thin film
With the polymethyl methacrylate layers；By the substrate, the phase-change thin film, the graphene film and the poly- methyl
Methyl acrylate layer immerses in acetone, to remove the polymethyl methacrylate layers.
Preferably, the graphene film with a thickness of 0.5nm~5nm.
Preferably, the phase-change thin film includes Ge-Sb-Te compound phase-variable film.
The present invention also provides a kind of systems in the production method, the system comprises piezoelectricity microscope carrier, swash
Optical assembly, control assembly and image-forming assembly.The piezoelectricity microscope carrier presses the piezoelectricity to carry for carrying object, and by the object
The signal that platform generates is transmitted to the control assembly；The laser module is for emitting laser, to irradiate the object；The control
Component processed is used to determine position of the object on the piezoelectricity microscope carrier according to the signal, and for being moved according to predetermined pattern
Move the object；The image-forming assembly is for being imaged the object, to monitor the object.
Preferably, the piezoelectricity microscope carrier includes the successively folded hand-operated lifting platform set, manual translation platform and piezoelectricity seat.It is described
Piezoelectricity seat is transmitted to the control assembly for carrying object, by the signal that the object presses the piezoelectricity microscope carrier to generate.It is described
Laser module includes laser, attenuator, beam expanding lens and object lens, and the laser that the laser is launched passes sequentially through described decline
Subtract piece, the beam expanding lens and the object lens to be irradiated on the object.The control assembly includes displacement controller and meter
Calculation machine, the displacement controller are connected between the piezoelectricity seat and the computer, and the computer is for receiving signal, root
Position of the object on the piezoelectricity seat is determined according to the signal, and is sent according to predetermined pattern to the displacement controller
Control instruction, the displacement controller are used to drive the piezoelectricity seat to be moved according to the control instruction.The imaging group
Part includes visible light source, the first lens, the second lens and camera, and the visible light that the visible light source issues passes through described the
One lens focus passes sequentially through object lens, the second lens imaging in the camera on the object.
Preferably, the laser is femto-second laser.
The present invention provides the production method of micro-nano structure and for the system in the production method, on the one hand by needing
It makes and covers non-linear saturated absorption film on the object of micro-nano structure, laser is made to pass through the non-linear saturated absorption film, it is right
Object is exposed to make micro-nano structure, concentrates laser beam more, reduces hot spot, improves micro-nano structure obtained
Precision；On the other hand, using femtosecond laser as laser source, the fuel factor for avoiding laser influences non-exposed areas, into one
Step improves the precision of micro-nano structure obtained.
Detailed description of the invention
Fig. 1 is the flow chart of the production method for the micro-nano structure that the embodiment of the present invention 1 provides；
Fig. 2 is the structural schematic diagram for the system in the production method in the embodiment of the present invention 2；
Fig. 3 is that the resistance of the Ge-Sb-Te compound phase-variable film in the embodiment of the present invention 1 with a thickness of 550nm varies with temperature
Schematic diagram；
Fig. 4 is the SEM with a thickness of 50 nanometers of Ge-Sb-Te compound phase-variable film surface prepared in the embodiment of the present invention 1
Figure；
Fig. 5 a and Fig. 5 b are the SEM figures for the micro-nano structure that the first embodiment in the embodiment of the present invention 2 obtains；
Fig. 6 a and 6b are the AFM plan views for respectively corresponding part-structure in Fig. 5 a and Fig. 5 b；
Fig. 7 a and Fig. 7 b are the sectional dimension schematic diagrames for respectively corresponding the micro-nano structure of Fig. 6 a and 6b；
Fig. 8 is the SEM figure for the micro-nano structure that second of embodiment in the embodiment of the present invention 2 obtains.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, with reference to the accompanying drawing to specific reality of the invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in attached drawing and according to
The embodiments of the present invention of attached drawing description are only exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show with closely related structure and/or processing step according to the solution of the present invention, and be omitted relationship it is little other are thin
Section.
Embodiment 1
Refering to fig. 1, the production method for present embodiments providing a kind of micro-nano structure, comprising steps of
S1, a substrate is provided, and production forms phase-change thin film over the substrate；
S2, non-linear saturated absorption film is covered on the phase-change thin film；
S3, the non-linear saturated absorption film is passed through using laser, and the phase-change thin film is carried out according to predetermined pattern
Exposure；
S4, developed using developer solution to the phase-change thin film after exposure, while the non-linear saturated absorption film being gone
It removes.
The production method of micro-nano structure provided by the invention, by making laser pass through the non-linear saturated absorption film to institute
It states phase-change thin film to be exposed, the non-linear saturated absorption characteristic of non-linear saturated absorption film, non-linear saturated absorption is utilized
Film is in nonlinear change with light intensity to the absorption of light, and the light beam for keeping laser intensity weaker is inhaled by the non-linear saturated absorption film
It receives, after laser passes through the non-linear saturated absorption film, laser beam is more concentrated, the exposure accuracy of laser is improved, into
And the higher micro-nano structure of precision can be made.
Illustratively, the phase-change thin film includes the multiple materials such as Ge-Sb-Te compound (GST compound) phase-change thin film
Phase-change thin film, the substrate can be soda-lime glass, monocrystalline silicon piece and silica silicon wafer, can also be above-mentioned material with
Molybdenum, selenium sulfide, boron nitride and cadmium sulfide any one Material cladding substrate.In the present embodiment, the phase-change thin film choosing
With amorphous Ge-Sb-Te compound phase-variable film, thickness is preferably 30nm~1000nm, and the substrate selects soda-lime glass.
Above-mentioned raw materials in this method easily obtain, and the material selection range of substrate and phase-change thin film is wide.The present embodiment be made with a thickness of
The amorphous Germanium antimony tellurium compound phase-change thin film of 550nm, resistance variation with temperature is referring to shown in Fig. 3, it can be clearly seen that,
At 160 DEG C or so, the resistance of Ge-Sb-Te compound phase-variable film produces apparent variation, it can be determined that goes out at 160 DEG C or so
Amorphous state has occurred to the inversion of phases of crystalline state in Ge-Sb-Te compound phase-variable film, and is substantially reduced resistance.Therefore, in micro-nano knot
In the manufacturing process of structure, it can judge whether phase-change thin film under Current Temperatures has occurred phase according to the resistance variations of phase-change thin film
Become, is changed into crystal.
In the step S1, it can be existed using the methods of magnetically controlled DC sputtering, rf magnetron sputtering and electron beam evaporation plating
Phase-change thin film is prepared on the substrate.The present embodiment selects radio frequency magnetron sputtering method to prepare phase-change thin film over the substrate.
Specifically, the substrate is cleaned using deionized water and cleaning agent first, by being dried with nitrogen the substrate through over cleaning；
Then by the substrate be placed in baking box, about 150 DEG C at a temperature of toast about 15min；The substrate is transferred to sputtering again
Chamber, vacuumizes the sputtering chamber, reaches 1 × 10 to vacuum degree-4Pa hereinafter, use radio frequency magnetically controlled DC sputtering again
Technique makes the phase-change thin film over the substrate.
Illustratively, the phase-change thin film can be the film for including the multiple materials such as Ge-Sb-Te compound phase-variable film,
The substrate can be soda-lime glass or monocrystalline silicon piece；In the present embodiment, the phase-change thin film selects amorphous Ge-Sb-Te
Compound phase-variable film, the substrate select soda-lime glass, and the sputtering chamber in air pressure is 0.8Pa and flow is 12ccm's
Under argon atmosphere, recycles sputtering 70s over the substrate with the sputtering power of 75W, the Ge-Sb-Te with a thickness of 50 nanometers is made
Close object phase-change thin film.As seen from Figure 4, the surfacing of Ge-Sb-Te compound phase-variable film obtained and it is smooth, be suitable for into
Row follow-up process.
To make non-linear saturated absorption film described in the laser light in specified region, and make the laser other than specified region by institute
It states non-linear saturated absorption film to absorb, the thickness of the non-linear saturated absorption film should be set in reasonable numberical range.?
In the present embodiment, the non-linear saturated absorption film is graphene film.The thickness of the graphene film be preferably 0.5nm~
5nm。
In the step S2, non-linear saturation is covered on the phase-change thin film using matrix etching wet process transfer techniques and is inhaled
Winder.Specifically, the method that non-linear saturated absorption film is covered on the phase-change thin film specifically includes step: it is copper-based to provide one
Bottom makes graphene film on copper-based bottom；The spin coating polymethyl methacrylate layers on the graphene film；Using corrosion
Corrosion removes the copper-based bottom, more specifically, etching copper-based bottom described in corrosion about using the ammonium persulfate that concentration is 10%
15min, then the salt acid soak about 5min for being 10% by the remaining copper-based bottom merging concentration, make the copper-based bottom by complete rotten
Erosion；The graphene film and the polymethyl methacrylate layers are immersed in deionized water and cleaned；Using being formed with
The substrate of the phase-change thin film takes out the graphene film and the poly-methyl methacrylate from the deionized water
Ester layer；The substrate, the phase-change thin film, the graphene film and the polymethyl methacrylate layers are immersed into acetone
In, to remove the polymethyl methacrylate layers, obtain the compound of the phase-change thin film and substrate for being covered with graphene film
The sample of structure；The sample finally is cleaned with alcohol and deionized water respectively, to the sample by after natural drying can be into
The processing procedure of row next step.
In the present embodiment, the laser is femtosecond laser.Using the characteristic of femtosecond laser " cold working ", since femtosecond swashs
Light can act on material within extremely short time and little space with high laser power density, using femtosecond laser
The phase-change thin film is exposed, specified region can be exposed in a very short period of time, specifies the material other than region
Still at former temperature, thermal diffusion will not be generated, to effectively increase the exposure accuracy of laser, and then precision can be made more
High micro-nano structure.
If needing to reduce laser intensity, making to refer to avoid too strong laser due to the micro-nano structure for thinking acquisition high resolution
Determine the region other than region and crystallization occurs, and with the decrease of laser intensity, crystallization degree can also weaken, and make in subsequent development
Cheng Zhong, specified region may be corroded because of corrosion resistance deficiency in developer solution, and given pattern can not be obtained by turn resulting in
Micro-nano structure.It therefore, further, can be by reducing the laser intensity of the femtosecond laser to default in the step S3
Intensity threshold, and the light application time for improving the femtosecond laser utilizes the spy of above-mentioned femtosecond laser to preset time threshold
Property, when increasing the time of laser light photograph to increase crystallization degree, the region crystallization other than specified region, Jin Erbao will not be made
Hold enough precision.
In the step S4, the sample merging developer solution after exposure is carried out wet etching, forms the micro-nano of given pattern
Structure, while the non-linear saturated absorption film being removed.Illustratively, it is 25% or 0.125% that the present embodiment, which selects concentration,
Tetramethylammonium hydroxide (TMAH) solution as developer solution, will not be crystallized or melt non-since laser intensity is excessive
The dissolution of crystalline state Ge-Sb-Te compound, leaves behind by laser explosure and occurs the Ge-Sb-Te compound of crystallization, obtains given pattern
Micro-nano structure.Wherein, the time developed completely needs according to the decision of the thickness of Ge-Sb-Te compound film, and the present embodiment is selected
5~30min.In addition, common strong acid or highly basic in addition to nitric acid also are used as the developer solution as other embodiments.
The sample obtains the micro-nano structure of given pattern after development.It can will form the germanium of the micro-nano structure
Its pattern is transferred in specific material layer by antimony tellurium compound as inorganic resist.
Embodiment 2
As shown in Fig. 2, the present embodiment additionally provides the system in a kind of production method for above-mentioned micro-nano structure, mainly
Ground is applied in above-mentioned steps S3.The system comprises piezoelectricity microscope carrier, laser module, control assembly and image-forming assemblies.Its
In, the piezoelectricity microscope carrier is transmitted to the control for carrying object, and by the signal that the object presses the piezoelectricity microscope carrier to generate
Component processed；The laser module is for emitting laser, to irradiate the object；The control assembly is used for true according to the signal
Fixed position of the object on the piezoelectricity microscope carrier, and for according to the mobile object of predetermined pattern；The image-forming assembly
For the object to be imaged, to monitor the object.
Specifically, the piezoelectricity microscope carrier includes the successively folded hand-operated lifting platform 13 set, manual translation platform 12 and piezoelectricity seat
11, the signal that the object 10 presses the piezoelectricity microscope carrier to generate is transmitted to described by the piezoelectricity seat 11 for carrying object 10
Control assembly, the hand-operated lifting platform 13 are used to manually adjust the height of object 10, and the manual translation platform 12 is for thick manually
Adjust the horizontal position of object 10.The piezoelectricity seat 11 is that nanoscale positions XY displacement platform, X of the piezoelectricity seat 11 in horizontal plane
On direction and Y-direction moving range be lnm~200um, closed loop resolution ratio 4nm, 160 μm of closed loop stroke, open loop resolution ratio
0.4nm, may be implemented micro-nano and accurately move point by point by 200 μm of open loop stroke.
The laser module includes laser 21, attenuator 22, beam expanding lens 23, reflecting mirror 24 and object lens 25, described to swash
The laser that light device is launched passes sequentially through the attenuator 22, the beam expanding lens 23, the reflecting mirror 24 and the object lens 25
It is irradiated on the object.In the present embodiment, the number of the attenuator 22 is two, and Thorlabs company is used to produce
Round continuous variable reflection-type neutral density (ND) optical filter provides linear adjustable decaying by rotation, the optical filter
Optical density (OD) range is 0~2 or 0~4.The object lens 25 are dry object lens, and numerical aperture is 0.15~0.9, and amplification factor is
10~100 times.The reflecting mirror 24 needs each portion according to the laser module for changing laser optical path, number and position
The arrangement of part is selected.
In the present embodiment, the laser 21 is femto-second laser.Illustratively, the pulse width of the femto-second laser
For 150fs~400fs, wavelength is adjustable in the range of 500~550nm and 1000~1100nm.
The control assembly includes displacement controller 31 and computer 32, and the displacement controller 31 is connected to the pressure
Between electric seat 11 and the computer 32, the computer 32 determines the object 10 according to the signal for receiving signal
Position on the piezoelectricity seat 11, and control instruction, the displacement are sent to the displacement controller 31 according to predetermined pattern
Controller 31 is used to drive the piezoelectricity seat 11 to be moved according to the control instruction.The control assembly is utilized by calculating
Dot matrix, straight line and the broken line to be processed of LabVIEW software program design in machine 32 etc. formulates pattern, creates new VI journey
Sequence can control speed and the time for exposure of scanning by being operated in operation interface shown in the front panel in computer 32, by
Computer 32 sends a command to displacement controller 31, drives the piezoelectricity seat 11 to carry out accurate movement, makes laser spot in sample
Product surface and the internal relative movement for carrying out micro-nano, make micro-nano structure.Being controlled by computer program not only can be with
The control precision for realizing Nano grade, can generate periodic structure, and microcell range within the scope of 1 μm~150 μm of microcell
The minimum line width of interior structure up to 100nm hereinafter, so above system can satisfy microelectronics, high density data storage and
The production demand of the micro-nano structure in the fields such as micro-optics.
The image-forming assembly includes visible light source 41, the first lens 42, the second lens 43 and camera 44, described visible
The visible light that light source 41 issues is focused on object 10 by first lens 42, and passes sequentially through object lens 25, the second lens
43 image in the camera 44.In the present embodiment, the camera 44 is CCD camera, and the image-forming assembly utilizes
It is different to the refractive index of light before and after phase-change material photocuring in laser processing procedure, CCD camera is imaged, directly monitors
Micro-nano structure imaging is processed, real-time monitoring is carried out to whole process.
By above system be applied to embodiment 1 the step S3 in, specifically include: first will include graphene film and
The sample of phase-change thin film is fixed on the designated position on the piezoelectricity seat 11 as the object 10, and the laser 21 emits
Laser, for the laser by the attenuator 22, being adjusted to laser intensity makes phase-change thin film undergo phase transition required light intensity,
Then the uniform laser beam of light distribution is formed by the beam expanding lens 23, changes optical path extremely using the reflection of reflecting mirror 24
Towards the direction of the sample, focuses through the object lens 25 and be irradiated on the phase-change thin film through the graphene film.
More specifically, as an implementation, being set described sharp when the system is applied to the step S3 of embodiment 1
21 output wavelength of light device is 515nm, the femtosecond laser that pulse width 150fs, repetition rate are 80MHz, the femtosecond laser
Successively through two attenuators, make light intensity decay to respectively former light intensity 50% and 25% after reach beam expanding lens 23 and expanded, then
Enter object lens 25 after several reflecting mirrors 24 change optical path, focuses in the phase-change thin film on the piezoelectricity seat 11.Finally, make
The spot diameter focused in the phase-change thin film is about 500nm, and the energy of hot spot is about 1.5mw and 2mw.The piezoelectricity seat 11
Under control according to the corresponding default VI program of given pattern, swept point by point since starting point by rectilinear direction by write program
It retouches to right side terminating point.Wherein, the displacement of X-direction and Y-direction is traditionally arranged to be within 50um, line-spacing be traditionally arranged to be 1um or
2um, the spacing of scanning element are traditionally arranged to be 0.1um or 1um, and the scanning element residence time is generally located on 0ms~100ms, sweeps
The setting for retouching speed depends on laser intensity.After setting laser intensity, VI program is run, makes laser spot amorphous
Point by point scanning is carried out inside phase-change thin film, is made scanned site heat-induced crystallization, is obtained the Ge-Sb-Te compound micro-nano knot of crystallization
Structure.After development, refering to the corresponding SEM (ScanningElectron of micro-nano structure obtained by present embodiment
Microscope, scanning electron microscope) Fig. 5 a and 5b and corresponding AFM (AtomicForceMicroscope, atomic force microscopy
Mirror) plan view 6a and 6b, further combined with Fig. 7 a and Fig. 7 b, (abscissa in two figures represents the section of micro-nano structure in level side
Upward length, ordinate represent the height of micro-nano structure) as can be seen that in the micro-nano structure that present embodiment obtains, crystallization
The height of line is 10nm and 15nm, and line width is 150nm and 240nm, and the precision of micro-nano structure obtained is higher, meets production and wants
It asks.
As can be seen that with the increase of laser intensity, the width of crystallization line is increasing, institute in certain range of light intensity
Resolution ratio can be significantly improved suitably to reduce light intensity；With the decrease of laser intensity, the crystallization degree of crystalline areas can also subtract
It is weak, the corrosion resistance of developer solution is reduced, keeps the height of crystallization line lower and lower.
And as another embodiment, under the premise of other conditions are constant, laser intensity selects 0.8mw, appropriate to drop
Low scanning speed makes the residence time 1000ms of point by point scanning, in the Ge-Sb-Te compound micro-nano structure obtained by development,
Referring to shown in SEM Fig. 8 of the micro-nano structure obtained after development as present embodiment, in the micro-nano structure, the crystallization of crystallization point
Radius is 150nm, and the height of crystallization point is 20nm, crystallization point away from being 1um, the arrangement of crystallization point in latticed form, crystallization dot matrix
Range is 10um × 10um.It can be seen that the higher micro-nano structure of precision can be equally made in present embodiment.As described above, should
Embodiment can be by reducing the laser intensity of the femtosecond laser to preset Intensity threshold, and improves the femtosecond laser
Light application time to preset time threshold, with using the characteristic of above-mentioned femtosecond laser, so that in the time for increasing laser light and shining
When crystallization degree to increase crystallization point, avoids increasing other crystalline areas, and obtain the micro-nano structure of higher precision.
In conclusion the production method of micro-nano structure provided by the invention and for the system in the production method, a side
Face makes laser pass through the non-linear saturation using non-linear saturated absorption film is covered on the object for need to make micro-nano structure
Absorbing film is exposed to make micro-nano structure object, concentrates laser beam more, reduces hot spot, improves obtained micro-
The precision of micro-nano structure；On the other hand, using femtosecond laser as laser source, avoid laser fuel factor influence specified region with
Outer non-exposed areas, to further improve the precision of micro-nano structure obtained, and the above method also has raw material easy
It obtains, raw material material range of choice is big, easy to operate and the advantages of cost is relatively low.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (10)
1. a kind of production method of micro-nano structure, which is characterized in that the production method comprising steps of
A substrate is provided, and production forms phase-change thin film over the substrate；
Non-linear saturated absorption film is covered on the phase-change thin film；
The non-linear saturated absorption film is passed through using laser, and the phase-change thin film is exposed according to predetermined pattern；
Developed using developer solution to the phase-change thin film after exposure, while the non-linear saturated absorption film being removed.
2. manufacturing method according to claim 1, which is characterized in that the laser is femtosecond laser.
3. production method according to claim 2, which is characterized in that passing through the non-linear saturated absorption using laser
Film, and in the step of being exposed according to predetermined pattern to the phase-change thin film, the laser intensity of the femtosecond laser is reduced, and
Improve the light application time of the femtosecond laser.
4. manufacturing method according to claim 1, which is characterized in that the non-linear saturated absorption film is that graphene is thin
Film.
5. production method according to claim 4, which is characterized in that cover non-linear saturation on the phase-change thin film and inhale
The method of winder specifically includes step:
One copper-based bottom is provided, makes graphene film on copper-based bottom；
The spin coating polymethyl methacrylate layers on the graphene film；
Using copper-based bottom described in corrosive liquid erosion removal；
The graphene film and the polymethyl methacrylate layers are immersed in deionized water and cleaned；
The graphene film and described is taken out from the deionized water using the substrate for being formed with the phase-change thin film
Polymethyl methacrylate layers；
The substrate, the phase-change thin film, the graphene film and the polymethyl methacrylate layers are immersed into acetone
In, to remove the polymethyl methacrylate layers.
6. production method according to claim 4 or 5, which is characterized in that the graphene film with a thickness of 0.5nm~
5nm。
7. manufacturing method according to claim 1, which is characterized in that the phase-change thin film includes Ge-Sb-Te compound phase-variable
Film.
8. a kind of system in production method described in claim 1, which is characterized in that the system comprises piezoelectricity loads
Platform, laser module, control assembly and image-forming assembly；
The piezoelectricity microscope carrier is transmitted to the control for carrying object, and by the signal that the object presses the piezoelectricity microscope carrier to generate
Component processed；
The laser module is for emitting laser, to irradiate the object；
The control assembly is used to determine position of the object on the piezoelectricity microscope carrier according to the signal, and is used for basis
The mobile object of predetermined pattern；
The image-forming assembly is for being imaged the object, to monitor the object.
9. system according to claim 8, which is characterized in that the piezoelectricity microscope carrier includes the successively folded hand-operated lifting set
Platform, manual translation platform and piezoelectricity seat, the piezoelectricity seat press the piezoelectricity microscope carrier to generate for carrying object, by the object
Signal is transmitted to the control assembly；
The laser module includes laser, attenuator, beam expanding lens and object lens, and the laser that the laser is launched successively leads to
The attenuator, the beam expanding lens and the object lens are crossed to be irradiated on the object；
The control assembly includes displacement controller and computer, the displacement controller be connected to the piezoelectricity seat with it is described
Between computer, the computer determines position of the object on the piezoelectricity seat according to the signal for receiving signal
It sets, and control instruction is sent to the displacement controller according to predetermined pattern, the displacement controller is used for according to the control
Instruction, drives the piezoelectricity seat to be moved；
The image-forming assembly includes visible light source, the first lens, the second lens and camera, and what the visible light source issued can
It is light-exposed by first lens focus on the object, and pass sequentially through object lens, the second lens imaging in the camera
It is interior.
10. system according to claim 9, which is characterized in that the laser is femto-second laser.
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| CN114815317A (en) * | 2022-06-28 | 2022-07-29 | 中山大学 | Imaging phase regulation and control device and method for phase change material film |
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