CN105549336A - Nano photoetching device and method for preparing super diffraction limit pattern - Google Patents
Nano photoetching device and method for preparing super diffraction limit pattern Download PDFInfo
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- CN105549336A CN105549336A CN201610064552.8A CN201610064552A CN105549336A CN 105549336 A CN105549336 A CN 105549336A CN 201610064552 A CN201610064552 A CN 201610064552A CN 105549336 A CN105549336 A CN 105549336A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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Abstract
The invention relates to a nano photoetching device and a method for preparing a super diffraction limit pattern. The device comprises a substrate, a lower base plate positioned on the substrate, a photoresist positioned on the lower base plate, an upper base plate positioned on the photoresist, a transparent base plate positioned on the upper base plate, and an exposure light source, wherein the upper base plate is provided with a photoetching pattern; the upper base plate and the lower base plate form a photoetching mask plate, and are respectively made of metal or alloy material; and the upper base plate and the lower base plate form a local area surface plasmon polariton structure during photoetching. By using the double-layer metal/alloy photoetching mask plate, a local area surface plasmon polariton mode can be formed during photoetching, the complicated super diffraction limit photoetching pattern is prepared, and the line width of the complicated super diffraction limit photoetching pattern is smaller than that of the photoetching pattern on the photoetching mask plate; and meanwhile, the line width and depth width of the super diffraction pattern can be regulated and controlled by changing materials of the photoetching mask plate and a surrounding medium, the thickness of the photoresist and the wavelength of the exposure light source and controlling exposure power and exposure time.
Description
Technical field
The present invention relates to nanoimprinting technology field, particularly relate to a kind of method of nanometer lithographic equipment and the super diffraction limit figure of preparation.
Background technology
Nano-photoetching is a very important step in micro-nano technology technology, and it utilizes photochemical reaction to be transferred to by circuitous pattern on substrate (such as silicon substrate).Because light has the wavelength of submicron order, therefore optical lithography can realize accurate micro-nano structure processing.
Requirement along with nanoprocessing technique is more and more higher and integrated circuit feature size is more and more less, and photoetching technique becomes and becomes increasingly complex.Due to the existence of optical diffraction limit, therefore the characteristic dimension of photoetching is also restricted, and is difficult to continue to reduce.Presently, the exposure wavelength reduced in photoetching is the most effective solution.Exposure wavelength in nano-photoetching is further reduced to 193nm of today from initial 365 nanometers (i line).People are also in the correlation technique of research deep ultraviolet wavelength (EUV, 13nm) simultaneously, with the requirement of the device size in satisfied future.Meanwhile, people have also found out many technological means to overcome diffraction limit, as phase-shift mask technology, oil immersion photoetching, secondary imaging technology etc.But along with the reduction of wavelength, the technical barrier related in nano-photoetching also gets more and more, research and development, production cost also increase rapidly thereupon.For liquid immersion lithography.High index of refraction immersion liquid knows from experience pollution photoresist, affects following process; Bubble in immersion liquid also can make litho pattern generation deformation; The introducing of immersion liquid simultaneously also makes whole work flow become complicated.In order to realize high-resolution imaging, optical lens group used in liquid immersion lithography is bulky, involve great expense.In addition, the 193nm light source of efficient stable is also the technical barrier needing to solve.
Surface plasma excimer (SurfacePlasmonPolaritons, SPPs) refers at the vibration of metal surface electron density and the interactional combination of photon.At the large metal interface of semiinfinite, the specific inductive capacity of metal is real part is negative plural number, and the specific inductive capacity of metal surface medium is positive real number.According to maxwell equation, compared with the light wave of same frequency, surface plasma excimer has larger wave vector, namely less effective wavelength, and its field distribution height local is at metal interface place.Due to the electromagnetic property that it is peculiar, surface plasma excimer is the important research direction of of current nano optoelectronics section, it receives and comprises physicist, chemist's material scholar, the great concern of multiple field such as biologist personage, in breakthrough diffraction limit, data store, microscope, the aspect such as solar cell and bio-sensing has to be studied widely.
In recent years, in nano-photoetching, optical diffraction limit research is broken through by follow-up story about utilizing surface plasmons effect, such as utilize the conoscope image of interference realization much smaller than wavelength dimension of surface plasma excimer, two of 365nm bundle input light are incident on metallic film at a certain angle by prism, stable interference fringe will be formed at the lower surface of metal.Its width of fringe is about 100nm.But being limited to used material and wavelength, the photoetching striped yardstick that the method realizes and cycle can not further reduce.Limit its application in nano-photoetching, interference technique is difficult to obtain irregular figure simultaneously, thus cannot meet the requirement of complex figure in actual photoetching demand.
Summary of the invention
The invention provides a kind of method of nanometer lithographic equipment and the super diffraction limit figure of preparation, can not reduce further with the size solving litho pattern in prior art, and be difficult to the problem preparing super diffraction limit complex figure.
For this purpose, the present invention proposes following technical scheme.
On the one hand, the invention provides a kind of nanometer lithographic equipment, comprise substrate, be positioned at lower template on described substrate, be positioned at photoresist on described lower template, be positioned at upper former on described photoresist, be positioned at transparent substrates on described upper former and exposure light source;
Described upper former has litho pattern, described upper former and described lower template composition
Lithography mask version, for mask lithography; The material of described upper former is metal or alloy material, and the material of described lower template is metal or alloy material; When photoetching, the litho pattern of described lower template and upper former forms local surface plasma excimer structure;
The litho pattern that described photoresist is used for lithography mask version is formed carries out record;
Described exposure light source is positioned on transparent substrates, for providing the light source of photoetching.
Preferably, described upper former is single film layer or multi-layer thin rete, and when described upper former is multi-layer thin rete, each thin layer successively superposes setting.
Alternatively, when described upper former is multi-layer thin rete, comprise the first film layer and the second thin layer, described second thin layer is positioned on described photoresist, described the first film layer is positioned on described second thin layer, and described transparent substrates is positioned on described the first film layer.
Preferably, described device also comprises lens, and described lens are between described transparent substrates and described exposure light source, and described lens are used for regulating and controlling the light launched from described exposure light source.
Alternatively, described exposure light source is any one in mercury lamp light source, Ultra-Violet Laser light source and femtosecond pulse light source.
On the other hand, the present invention also provides a kind of method utilizing any one device above-mentioned to prepare super diffraction limit figure, and described method comprises:
S1, substrate is formed the lower template of the first setting thickness, and transparent substrates is formed the upper former with litho pattern of the second setting thickness, described lower template and described upper former composition lithography mask version; The material of described upper former is metal or alloy material, and the material of described lower template is metal or alloy material;
S2, on described lower template, spin coating the 3rd sets the photoresist of thickness, and is placed on hot plate and toasts;
S3, by described transparent substrates and described substrate pressing, makes the upper former on described transparent substrates contact described suprabasil photoresist;
S4, adopts exposure light source to irradiate described transparent substrates, through to described photoresist developing, after fixing, described photoresist obtains super diffraction limit figure.
When described upper former is single film layer, on transparent substrates, forms upper former in described step S1 comprise:
Transparent substrates is formed the first film layer;
Described step S3 comprises: by described transparent substrates and described substrate pressing, makes the first film layer on described transparent substrates contact described suprabasil photoresist;
Preferably, when described upper former is multi-layer thin rete, described on transparent substrates, form the first film layer after also comprise:
The first film layer is formed the second thin layer;
Described step S3 comprises: by described transparent substrates and described substrate pressing, make suprabasil photoresist described in the second thin film layer on described transparent substrates.
Alternatively, the described lower template forming the first setting thickness in substrate comprises: the lower template being formed the first setting thickness by magnetron sputtering, deposition, evaporation or electron beam evaporation on the substrate;
The described upper former with litho pattern forming the second setting thickness on transparent substrates comprises:
On described transparent substrates, the upper former of the second setting thickness is formed by magnetron sputtering, deposition, evaporation or electron beam evaporation;
In described upper former, litho pattern is formed by focused-ion-beam lithography or electron beam lithography.
Preferably, described step S4 specifically comprises: after the rays pass through lens of launching from described exposure light source regulates and controls, be irradiated to described transparent substrates, after developing fixing, described photoresist obtain super diffraction limit figure.
Particularly, the live width of the described super diffraction limit figure obtained on a photoresist and depth-to-width ratio are realized by least one in time shutter of controlling the material of lower template, the thickness of lower template, the material of upper former, the thickness of upper former, the wavelength of exposure light source, the exposure power of exposure light source, exposure light source.
Beneficial effect of the present invention is:
Nanometer lithographic equipment provided by the invention and method, by forming the lower template of metal or alloy material in substrate, transparent substrates is formed the upper former of metal or alloy material, double-deck lithography mask version is formed by upper former and lower template, when photoetching, because lower template and upper former form local surface plasma excimer structure, local surface plasma polariton modes can be encouraged, the characteristic that local surface plasma polariton modes shakes due to its local, make near this structure, to occur local concussion field, add local surface plasmon polariton modes and can make photoresist sex change, and then make the live width of the figure of photoetching in substrate be less than the live width of the litho pattern in upper former, obtain super diffraction limit figure,
In addition, due to local surface plasma excimer structure by upper former and lower template with the use of formation, make to make complicated litho pattern in upper former, thus the complicated litho pattern of super diffraction limit can be prepared;
Moreover owing to utilizing the local surface plasma polariton modes of double-decker lithography mask version, making to have more diversity to the selection of exposure light source, can be continuous light source, can be also pulsed laser light source, have practicality widely.
Accompanying drawing explanation
Can understanding the features and advantages of the present invention clearly by reference to accompanying drawing, accompanying drawing is schematic and should not be construed as and carry out any restriction to the present invention, in the accompanying drawings:
Fig. 1 shows the schematic diagram of nanometer lithographic equipment in one embodiment of the invention;
Fig. 2 show one embodiment of the invention at the middle and upper levels template be the schematic diagram of double-layer films Rotating fields;
Fig. 3 shows the schematic diagram of another embodiment of the present invention nanometer lithographic equipment;
Fig. 4 shows the schematic diagram of nanometer lithographic equipment template at the middle and upper levels;
Fig. 5 shows the schematic diagram of photoresist sex change when adopting positive photo glue to carry out photoetching;
Fig. 6 shows the litho pattern schematic diagram obtained after photoresist sex change in Fig. 5;
Fig. 7 shows the schematic diagram of photoresist sex change when adopting negative photoresist to carry out photoetching;
Fig. 8 shows the litho pattern schematic diagram obtained after photoresist sex change in Fig. 7;
Fig. 9 shows the schematic diagram adopting positive photo glue to carry out photoresist sex change after photoetching when upper former is double-layer films Rotating fields;
In figure, 1-exposure light source, 2-lens, 3-transparent substrates, 4-upper former, 5-photoresist, 6-lower template, 7-substrate, 41-the first film layer, 42-second thin layer, the unexposed positive photo glue of 51-, 52-second exposure portion, 53-first exposure portion, the unexposed negative photoresist of 54-.
Embodiment
Below in conjunction with accompanying drawing, embodiments of the present invention is described in detail.
Nanometer lithographic equipment provided by the invention comprises substrate, be positioned at lower template on substrate, be positioned at photoresist on lower template, be positioned at upper former on photoresist, be positioned at transparent substrates on upper former and exposure light source;
Wherein, when photoetching, photoresist, after developing fixing, is formed with super diffraction limit figure;
Upper former has litho pattern, and upper former and lower template composition lithography mask version, for mask lithography; The material of upper former is metal or alloy material, and the material of lower template is metal or alloy material; When photoetching, the litho pattern of lower template and upper former forms local surface plasma excimer structure;
The litho pattern that photoresist is used for lithography mask version is formed carries out record;
Exposure light source is positioned on transparent substrates, for providing the light source of photoetching.
The present invention, by forming the lower template of metal or alloy material in substrate, transparent substrates forms the upper former of metal or alloy material, forms double-deck lithography mask version by upper former and lower template.When photoetching, because lower template and upper former form local surface plasma excimer structure, local surface plasma polariton modes can be encouraged, the characteristic that local surface plasma polariton modes shakes due to its local, make near this structure, to occur local concussion field, add local surface plasmon polariton modes and can make photoresist sex change, and then make the live width of figure on a photoresist be less than the live width of the litho pattern in upper former, obtain super diffraction limit figure.In addition, due to local surface plasma excimer structure by upper former and lower template with the use of formation, make to make complicated litho pattern in upper former, thus the complicated litho pattern of super diffraction limit can be prepared.
It should be noted that, above-mentioned metal or alloy material specifically comprises: Au and alloy, Ag and alloy thereof, Al and alloy, Zn and alloy thereof, Pt and alloy, Ti and alloy thereof, metallic ceramics, semiconductor material, Graphene or silit etc.
During concrete enforcement, exposure light source can be selected according to the actual requirements, and the mercury lamp light source of can be wavelength be 365nm, 436nm, wavelength is the Ultra-Violet Laser light source of 355nm, 436nm, 254nm, and wavelength is the femtosecond pulse light source etc. of 400nm, 800nm.
During concrete enforcement, photoresist can be positive photo glue, also can be negative photoresist, and wherein, after exposure, the part being subject to illumination becomes easy dissolving to positive photo glue, is dissolved after development, only retains and does not form litho pattern by the part of illumination.Negative photoresist is contrary with positive photo glue, and after exposure, the part being subject to illumination becomes not soluble, and after development, the part retained by illumination forms litho pattern.
Upper former can be the structure of single film layer.In order to regulate and control the live width of the super diffraction limit figure obtained in substrate further, upper former can also be set to the structure of multi-layer thin rete, each layer film layer successively superposes setting.
The power of the light launched from exposure light source in order to Effective Regulation and exposure area size, can set up lens between transparent substrates and exposure light source.
The method utilizing nanometer lithographic equipment provided by the invention to prepare super diffraction limit figure comprises the following steps:
S1, substrate is formed the lower template of the first setting thickness, and transparent substrates is formed the upper former with litho pattern of the second setting thickness, and upper former and lower template form double-deck lithography mask version; The material of upper former is metal or alloy material, and the material of lower template is metal or alloy material.
The lower template that substrate is formed the first setting thickness comprises: the lower template being formed the first setting thickness by magnetron sputtering, deposition, evaporation or electron beam evaporation in substrate.
The upper former with litho pattern that transparent substrates is formed the second setting thickness comprises:
On transparent substrates, the upper former of the second setting thickness is formed by magnetron sputtering, deposition, evaporation or electron beam evaporation;
In upper former, litho pattern is formed by focused-ion-beam lithography or electron beam lithography.
S2, on lower template, spin coating the 3rd sets the photoresist of thickness, and is placed on hot plate and toasts.
S3, by transparent substrates and substrate pressing, makes the upper former on transparent substrates contact suprabasil photoresist.
S4, adopts exposure light source to irradiate transparent substrates, after fixing to photoresist developing, obtains super diffraction limit figure on a photoresist.
The live width of the super diffraction limit figure obtained on a photoresist and depth-to-width ratio can be realized by the material of control lower template, the thickness of lower template, the material of upper former, the thickness of upper former, surrounding dielectric material, the thickness of photoresist, the wavelength of exposure light source, the exposure power of exposure light source, the time shutter etc. of exposure light source.
The power of the light launched from exposure light source in order to Effective Regulation and exposure area size, can set up lens between transparent substrates and exposure light source.Now, after the first scioptics of light that exposure light source is launched regulate and control, then be irradiated on transparent substrates.
Describe the present invention below by way of specific embodiment.
Embodiment one
Fig. 1 is the structural representation of the embodiment of the present invention one nanometer lithographic equipment, as shown in Figure 1, this device comprises substrate 7, is positioned at lower template 6 on substrate 7, is positioned at photoresist 5 on lower template 6, is positioned at upper former 4 on photoresist 5, is positioned at smooth transparent substrates 3 on upper former 4 and exposure light source 1.
Wherein, upper former 4 has the litho pattern " THU " of required complexity, as shown in Figure 4.Upper former 4 and lower template 6 form lithography mask version, for mask lithography.The material of upper former 4 is aluminium, and thickness is 15nm, and the live width of litho pattern " THU " is 100nm; The material of lower template 6 is aluminium, and thickness is about 100nm.When photoetching, lower template 6 forms local surface plasma excimer structure with the litho pattern of upper former 4.Photoresist 5 adopts positive photo glue, as AZ1500.Exposure light source 1 is positioned at the top of transparent substrates 3, and exposure light source 1 adopts the full solid state ultraviolet laser light source of 355nm wavelength, and light source power is 1w.
During concrete enforcement, on transparent substrates 3, first form the upper former 4 with litho pattern: the upper strata aluminum film layer namely by magnetron sputtering, deposition, evaporation or electron beam evaporation growth thickness on transparent substrates 3 being 15nm; By the litho pattern " THU " of the method such as focused-ion-beam lithography or electron beam lithography preparation complexity as shown in Figure 4, the live width of litho pattern " THU " is 100nm.Then in substrate 7, lower template 6 is formed: the lower floor's aluminum film layer namely being grown about 100nm by magnetron sputtering, deposition, evaporation or electron beam evaporation in substrate 7.In lower template 6, spin coating a layer thickness is the positive photo glue 5 of 40nm again.The lower template 6 of good for spin coating positive photo glue 5 and substrate 7 to be placed on hot plate 100 degree of bakings 1 minute.Be inverted in above positive photo glue 5 by the transparent substrates 3 with upper former 4, make upper former 4 and positive photo glue 5 close contact, now, upper former 4 and lower template 6 coordinate formation local surface plasma excimer structure.The light that the full solid state ultraviolet laser light source utilizing wavelength to be 355nm is launched exposes to transparent substrates 3, and the time shutter was 5 seconds.Irradiated by light, the upper former 4 of aluminium material is made to produce local surface plasmon polariton modes with the lower template 6 of aluminium material, make photoresist 5 sex change, as shown in Figure 5, the local surface plasmon polariton modes produced by light photolithography mask plate makes the positive photo glue sex change in the second exposure portion 52, simultaneously, the positive photo glue in the first exposure portion 53 is owing to being exposed the light direct projection generation sex change of light source 1 transmitting, and the non-sex change of another part positive photo glue, as positive photo glue 51 unexposed in Fig. 5.Finally, photoresist 5 forms super diffraction limit figure, as shown in Figure 6, the super diffraction limit figure " THU " obtained is by not forming by the positive photo glue of exposure sex change, peripheral part is a part for substrate 7, and figure live width can be decreased to 50nm compared to its live width of the litho pattern in upper former 4.
Embodiment two
As shown in Figure 3, the difference of the embodiment of the present invention one nanometer lithographic equipment and embodiment one is: between transparent substrates 3 and exposure light source 1, set up lens 2, and these lens 2 are for regulating and controlling power and the exposure area size of the light launched from exposure light source 1.Separately, the material of the embodiment of the present invention two template 4 is at the middle and upper levels gold, and the material of lower template 6 be golden; Exposure light source employing wavelength is the femtosecond pulse light source of 800nm, and repetition frequency is 1kHz, and power is 600mw, and pulse width is 150fs; Time shutter was 20 seconds.
During concrete enforcement, on transparent substrates 3, first form the upper former 4 with litho pattern: the upper strata gold thin film layer namely by magnetron sputtering, deposition, evaporation or electron beam evaporation growth thickness on transparent substrates 3 being 15nm; By the litho pattern " THU " of the method such as focused-ion-beam lithography or electron beam lithography preparation complexity as shown in Figure 4, the live width of litho pattern " THU " is 100nm.Then in substrate 7, lower template 6 is formed: the lower floor's gold thin film layer namely being grown about 100nm by magnetron sputtering, deposition, evaporation or electron beam evaporation in substrate 7.In lower template 6, spin coating a layer thickness is the positive photo glue 5 of 40nm again.The lower template 6 of good for spin coating positive photo glue 5 and substrate 7 to be placed on hot plate 100 degree of bakings 1 minute.Be inverted in above positive photo glue 5 by the transparent substrates 3 with upper former 4, make upper former 4 and positive photo glue 5 close contact, now, upper former 4 and lower template 6 coordinate formation local surface plasma excimer structure.The light that the femtosecond pulse light source utilizing wavelength to be 800nm is launched exposes to transparent substrates 3 after lens 2 focus on, and the time shutter was 20 seconds.Irradiated by light, the upper former 4 of golden material is made to produce local surface plasmon polariton modes with the lower template 6 of golden material, make photoresist 5 sex change, as shown in Figure 5, the local surface plasmon polariton modes produced by light photolithography mask plate makes the positive photo glue sex change in the second exposure portion 52, simultaneously, the positive photo glue in the first exposure portion 53 is owing to being exposed the light direct projection generation sex change of light source 1 transmitting, and the non-sex change of another part positive photo glue, as positive photo glue 51 unexposed in Fig. 5.Finally, through development, fixing after on photoresist 5 formed super diffraction limit figure, as shown in Figure 6, the super diffraction limit figure " THU " obtained is not by forming by the positive photo glue of exposure sex change, and figure live width reduces half compared to its live width of the litho pattern in upper former 4.
The embodiment of the present invention, by changing exposure light source, namely changes the wavelength of exposure light source, and the material of upper former and lower template, and can regulate and control the live width of super diffraction limit figure, applicability is strong.By setting up lens, can regulate and control light source power and exposure area size, realizing the further regulation and control of super diffraction limit figure, comprise its live width and depth-to-width ratio etc., there is wider practicality.The effect of adjustment on photoetching of time shutter has impact.
It should be noted that, to the lower template 6 of the good positive photo glue 5 of spin coating and substrate 7 be placed in hot plate toasts time, temperature, decide according to the model of the photoresist adopted, chemical characteristic.
Embodiment three
The embodiment of the present invention three is with the difference of embodiment one: exposure light source adopts mercury lamp light source; Photoresist adopts negative photoresist, as SU8; Time shutter was 20 seconds.
During concrete enforcement, on transparent substrates 3, first form the upper former 4 with litho pattern and form lower template 6 in substrate 7, the method for formation is identical with embodiment one, does not repeat them here.In lower template 6, spin coating a layer thickness is the negative photoresist 5 of 40nm again.The lower template 6 of good for spin coating positive photo glue 5 and substrate 7 to be placed on hot plate 150 degree of bakings 3 minutes.Be inverted in above positive photo glue 5 by the transparent substrates 3 with upper former 4, make upper former 4 and positive photo glue 5 close contact, now, upper former 4 and lower template 6 coordinate formation local surface plasma excimer structure.The light utilizing mercury lamp light source 1 to launch exposes to transparent substrates 3, and the time shutter was 20 seconds.Irradiated by light, the upper former 4 of aluminium material is made to produce local surface plasmon polariton modes with the lower template 6 of aluminium material, make photoresist 5 sex change, as shown in Figure 7, the local surface plasmon polariton modes produced by light photolithography mask plate makes the negative photoresist generation sex change in the second exposure portion 52, simultaneously, also there is sex change due to the light direct projection being exposed light source 1 and launching in the negative photoresist in the first exposure portion 53, and another part negative photoresist is not due to by the non-sex change of illumination, as negative photoresist 54 unexposed in Fig. 7.By development, fixing after, the negative photoresist in the first exposure portion 53 and the second exposure portion 52 is due to sex change, become not soluble, finally, photoresist 5 forms super diffraction limit figure, as shown in Figure 8, the part that the super diffraction limit figure " THU " obtained is substrate 7, the negative photoresist of peripheral part sex change by being exposed forms, and figure live width can be decreased to 50nm compared to its live width of the litho pattern in upper former 4.
Embodiment four
The embodiment of the present invention four is with the difference of embodiment one: the material of lower template 6 is platinum; Lens 2 are set up between transparent substrates 3 and exposure light source 1.
During concrete enforcement, on transparent substrates 3, first form the upper former 4 with litho pattern and form lower template 6 in substrate 7, now lower template 6 is lower floor's platinum film layer, and method and the embodiment one of formation are similar, do not repeat them here.Spin coating positive photo glue 5 and later use exposure light source 1 carries out irradiating step and embodiment two is similar, also repeats no more at this.Finally obtain super diffraction limit figure as shown in Figure 6.The super diffraction limit figure " THU " obtained is not by forming by the positive photo glue of exposure sex change, and super diffraction limit figure live width is about 50nm.
Embodiment five
The embodiment of the present invention five is with the difference of embodiment four: the material of upper former 4 is the alloy that forms of copper of aluminium and 3%.During concrete enforcement, transparent substrates 3 forming upper former 4, is namely the upper strata alloy firm layer of 15nm by magnetron sputtering, deposition, evaporation or electron beam evaporation growth thickness on transparent substrates 3, then etches complicated litho pattern " THU ".After utilizing exposure light source 1 to irradiate, obtain super diffraction limit figure as shown in Figure 6.The super diffraction limit figure " THU " obtained is not by forming by the positive photo glue of exposure sex change, and super diffraction limit figure live width is about 50nm.
Embodiment six
The difference of the embodiment of the present invention six and embodiment one is: between transparent substrates 3 and exposure light source 1, set up lens 2; Upper former 4 is double-layer film structure, as shown in Figure 2, comprise the first film layer 41 and the second thin layer 42, second thin layer 42 is positioned on photoresist 5, and the first film layer 41 is positioned on the second thin layer 42, and transparent substrates 3 is positioned on the first film layer 41, and the material of the first film layer 41 is gold, the material of the second thin layer 42 is aluminium, and the thickness of the first film layer 41 and the second thin layer 42 is 15nm, and live width is 100nm.
During concrete enforcement, transparent substrates 3 is formed the upper former 4 with litho pattern and specifically comprises:
By the first film layer 41 that magnetron sputtering, deposition, evaporation or electron beam evaporation growth thickness on transparent substrates 3 is 15nm, material is gold;
By the second thin layer 42 that magnetron sputtering, deposition, evaporation or electron beam evaporation growth thickness on the first film layer 41 is 15nm, material is aluminium;
By the litho pattern " THU " that the preparation of the method such as focused-ion-beam lithography or electron beam lithography is complicated, the live width of litho pattern " THU " is 100nm.
The forming process of lower template 6, the spin coating process of positive photo glue 5 and embodiment one are similar, do not repeat them here.The transparent substrates 3 with upper former 4 is inverted in above positive photo glue 5, makes the second thin layer 42 and positive photo glue 5 close contact.Similar, also super diffraction limit figure can be formed on photoresist 5, as shown in Figure 9, the super diffraction limit figure " THU " obtained is by not forming by the positive photo glue of exposure sex change, the live width of super diffraction limit figure is about 30nm, reduces 70% compared to its live width of the litho pattern in upper former 4.
It should be noted that, upper former 4 can also be other multi-layer thin retes, and as three layers, four layers etc., each thin layer successively superposes setting.According to the needs of actual photoetching factor, as live width, the degree of depth of photoetching, the effect etc. of photoetching of photoetching, can control the thickness of upper former 4, lower template 6, the thickness of embodiment of the present invention upper former 4 is 10nm to 30nm, and the thickness of lower template 6 is at about 100nm.The thickness of upper former 4 and lower template 6 realized mainly through the process time or speed controlling the techniques such as magnetron sputtering, deposition, thermal evaporation.Similarly, the thickness of embodiment of the present invention photoresist 5 is 20nm to 80nm, and its thickness also can be controlled by spin coating proceeding.By changing the thickness of upper former 4, can regulate and control lithographic results; By changing the thickness of photoresist 5, the degree of depth of super diffraction limit figure can be regulated and controled.
The embodiment of the present invention due to local surface plasma excimer structure by upper former 4 and lower template 6 with the use of formation, make to make complicated litho pattern in upper former 4, thus realize the preparation of the complicated litho pattern of super diffraction limit, as " THU " in embodiment.Understandable, for simple litho pattern, as the litho patterns such as annulus, vertical bar, grating equally also can be prepared.
The device and method that the embodiment of the present invention provides utilizes double-deck lithography mask version to form local surface plasma polariton modes, to realize the nano-photoetching of the breakthrough diffraction limit of complex figure.Although describe embodiments of the present invention by reference to the accompanying drawings; but those of ordinary skill in the art can make various amendment and distortion without departing from the spirit and scope of the present invention; obtain other various embodiments, these change accordingly and are out of shape the protection domain that all should belong to the claim appended by the present invention.
Claims (10)
1. a nanometer lithographic equipment, it is characterized in that, comprise substrate, be positioned at lower template on described substrate, be positioned at photoresist on described lower template, be positioned at upper former on described photoresist, be positioned at transparent substrates on described upper former and exposure light source;
Described upper former has litho pattern, and described upper former and described lower template composition lithography mask version, for mask lithography; The material of described upper former is metal or alloy material, and the material of described lower template is metal or alloy material; When photoetching, the litho pattern of described lower template and upper former forms local surface plasma excimer structure;
The litho pattern that described photoresist is used for lithography mask version is formed carries out record;
Described exposure light source is positioned on transparent substrates, for providing the light source of photoetching.
2. device according to claim 1, is characterized in that, described upper former is single film layer or multi-layer thin rete, and when described upper former is multi-layer thin rete, each thin layer successively superposes setting.
3. device according to claim 2, it is characterized in that, when described upper former is multi-layer thin rete, comprise the first film layer and the second thin layer, described second thin layer is positioned on described photoresist, described the first film layer is positioned on described second thin layer, and described transparent substrates is positioned on described the first film layer.
4. device according to claim 1, is characterized in that, described device also comprises lens, and described lens are between described transparent substrates and described exposure light source, and described lens are used for regulating and controlling the light launched from described exposure light source.
5. the device according to any one of claim 1-4, is characterized in that, described exposure light source is any one in mercury lamp light source, Ultra-Violet Laser light source and femtosecond pulse light source.
6. utilize the device according to any one of claim 1-5 to prepare a method for super diffraction limit figure, it is characterized in that, described method comprises:
S1, substrate is formed the lower template of the first setting thickness, and transparent substrates is formed the upper former with litho pattern of the second setting thickness, described lower template and described upper former composition lithography mask version; The material of described upper former is metal or alloy material, and the material of described lower template is metal or alloy material;
S2, on described lower template, spin coating the 3rd sets the photoresist of thickness, and is placed on hot plate and toasts;
S3, by described transparent substrates and described substrate pressing, makes the upper former on described transparent substrates contact described suprabasil photoresist;
S4, adopts exposure light source to irradiate described transparent substrates, through development, obtains super diffraction limit figure after fixing on a photoresist.
7. method according to claim 6, is characterized in that, when described upper former is single film layer, forms upper former and comprise in described step S1 on transparent substrates:
Transparent substrates is formed the first film layer;
Described step S3 comprises: by described transparent substrates and described substrate pressing, makes the first film layer on described transparent substrates contact described suprabasil photoresist;
When described upper former is multi-layer thin rete, described on transparent substrates, form the first film layer after also comprise:
The first film layer is formed the second thin layer;
Described step S3 comprises: by described transparent substrates and described substrate pressing, make suprabasil photoresist described in the second thin film layer on described transparent substrates.
8. method according to claim 6, is characterized in that, the described lower template forming the first setting thickness in substrate comprises: the lower template being formed the first setting thickness by magnetron sputtering, deposition, evaporation or electron beam evaporation on the substrate;
The described upper former with litho pattern forming the second setting thickness on transparent substrates comprises:
On described transparent substrates, the upper former of the second setting thickness is formed by magnetron sputtering, deposition, evaporation or electron beam evaporation;
In described upper former, litho pattern is formed by focused-ion-beam lithography or electron beam lithography.
9. method according to claim 6, it is characterized in that, described step S4 specifically comprises: after the rays pass through lens of launching from described exposure light source regulates and controls, be irradiated to described transparent substrates, after developing fixing, described photoresist obtains super diffraction limit figure.
10. the method according to any one of claim 6-9, it is characterized in that, the live width of the described super diffraction limit figure obtained on a photoresist and depth-to-width ratio are realized by least one in time shutter of controlling the material of lower template, the thickness of lower template, the material of upper former, the thickness of upper former, the wavelength of exposure light source, the exposure power of exposure light source, exposure light source.
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