CN109668631A - A kind of preparation method of the superconducting nano-wire single-photon detector of large area, low cost - Google Patents
A kind of preparation method of the superconducting nano-wire single-photon detector of large area, low cost Download PDFInfo
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- CN109668631A CN109668631A CN201811509702.7A CN201811509702A CN109668631A CN 109668631 A CN109668631 A CN 109668631A CN 201811509702 A CN201811509702 A CN 201811509702A CN 109668631 A CN109668631 A CN 109668631A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
Abstract
The invention discloses a kind of preparation methods of the superconducting nano-wire single-photon detector of large area, low cost, prepare one layer of superconducting film material in substrate surface；One layer of reflection aid imaging film layer is prepared on superconducting thin film, reflection-aiding layer structure mainly plays the evanescent wave ingredient in enhancing amplification image-forming information；One layer of imaging layer is prepared in reflection aid imaging film layer；Then one layer of transmission aid imaging film layer is prepared, which mainly plays excitating surface plasma wave, high level diffracted wave is coupled into surface plasma；Using surface plasma photoetching technology, the superconducting nano-wire single-photon detector structure of design is obtained by photoetching process；By etching transmission method, the nano wire panel detector structure in imaging layer is transmitted to lower layer's superconducting thin film layer, obtains final superconducting nano-wire single-photon detector.The present invention effectively overcome the problems, such as the processing of current nanowire single photon detector part rely on electron beam exposure take a long time, higher cost.
Description
Technical field
The present invention relates to the technical fields of superconducting nano-wire single-photon detector preparation, and in particular to a kind of large area, low
The preparation method of the superconducting nano-wire single-photon detector of cost.
Background technique
Superconducting single-photon detector (SNSPD) has quantum efficiency high, and dark counting is low, and counting rate is high, and circuit design is succinct
Etc. advantages, be mainly used in quantum communications, satellite ranging, the weak light detections such as deep space communication field.The processing difficulties currently encountered
It is in the processing technology of superconducting nano-wire of the good characteristic size of large area, figure homogeneity in 100nm magnitude.In face of this
Difficult point, current main-stream processing scheme be using commercial electronic beam exposure sources complete large area 100nm superconducting nano-wire plus
Work is still faced with that processing efficiency is low, instrument is high although commercial electronic beam exposure system solves the difficult point of machining accuracy
Expensive, the problems such as maintenance cost is high, it is unable to satisfy the application demand of Mirae Corp. SNSPD.Moreover, utilizing electron beam process monochromatic light
It generally requires and finely combines nano wire and the label coarse-texture separate machineds such as electrode when sub- sensitive detection parts.And based on surface etc. from
Device prepared by daughter (SP) photoetching technique can not only reach requirement in characteristic size, and the homogeneity of lines also reaches
Higher level, meanwhile, surface plasma photoetching technology can once realize different structure characteristic size, large-area graphs
The advantages such as processing has process time short, and processing cost is low, have more in similar nanoprocessing method than business industry & solution
Excellent effect.
Summary of the invention
The technical problem to be solved by the present invention is overcoming the nanowire structure in superconducting single-photon detector using electron beam
Exposure technique bring processing efficiency is low, process equipment and processing cost valuableness problem.There is provided it is a kind of based on surface etc. from
Large area, the preparation method of the superconducting nano-wire single-photon detector of low cost of daughter photoetching technique, this method only need often
Plated film, gluing and the etching transmitting of rule, so that it may prepare hundred nanometers and more high resolution superconducting single-photon detector structure, open up
The application range of surface plasma photoetching technology is opened up.The superconducting single-photon spy of a kind of large area, low cost is provided simultaneously
Device processing method is surveyed, provides a kind of approach for the application demand of Mirae Corp. SNSPD.
The technical solution used to solve the technical problems of the present invention is that: the superconducting nano-wire list of a kind of large area, low cost
The preparation method of photon detector, including the following steps:
Step (1) selects smooth substrate；
Step (2) substrate surface prepare one layer of superconducting thin film, superconducting thin film layer with a thickness of d1=2~100nm；
Step (3) prepares one layer of reflective aid imaging film layer, thickness d on superconducting thin film layer2=10~100nm；Control
Tabulate surface evenness≤2nm；
Step (4) prepares one layer of imaging film layer in reflective aid imaging film layer, controls glue thickness d3=15~150nm；
Step (5) continues to prepare one layer of transmission-type aid imaging film layer in imaging film layer, with a thickness of d4=10~
100nm；
Step (6) utilizes surface plasma photoetching technology, and development obtains required superconducting nano-wire in imaging film layer
Single-photon detector structure, obtained nanowire single photon detector structure: area d5=0.05mm~100mm, electrode figure
Shape width d6=1 μm~500 μm, nanometer line graph period d7=40nm~500nm, line width d8=15~300nm；
Step (7) performs etching single-photon detector structure obtained in step (6), by the detector knot in imaging layer
Structure is transferred in bottom reflection aid imaging film layer；
It is secondary that step (8) reflects the progress of the single-photon detector structure in aid imaging film layer obtained in step (7)
Etching transmitting, detector graphic structure is transmitted in the superconductor of bottom；
Remaining reflection aid imaging film material is removed by step (9) by chemical method, thus thin in superconduction
Final superconducting nano-wire single-photon detector is obtained in membrane material；
Base material in the step (1) can be silicon base, quartz substrate, magnesium fluoride substrate and all kinds of flexible bases
Bottom material.Flexible base material therein should have good planarization, without large area defect, with certain deformability.
The superconducting thin film layer prepared in the step (2) can pass through magnetron sputtering deposition, chemical vapor deposition or original
Prepared by the mode of sublayer deposition, superconduction film layer can be NbN, WSi material with superconducting characteristic that is also possible to other.
Material described in the reflective aid imaging film layer prepared in the step (3), which can be Ag, Au or other, has Jie
The material that electric constant is negative, processing method by magnetron sputtering deposition, atomic layer deposition, chemical vapor deposition or can be selected
Select the mode of vacuum evaporation deposition.
Prepared imaging film layer can be AR series, AZ series or PMMA series of photosensitive material in the step (4).
The transmission-type aid imaging film layer prepared in the step (5) can be prepared directly in imaging film layer, can also be with
Preparation is on mask graph.It can be in such a way that magnetron sputtering plating also can choose vacuum evaporation.The transmission wherein prepared
Formula aid imaging film material can be Ag, Au or other materials being negative with dielectric constant.
The surface plasma photoetching technology used in the step (6), wherein according to used mask figure
To determine photoetching mode.Wherein, include large area single-photon detector structure in mask graph, single photoetching mode can be used
To process large area single-photon detectors.Or it can be adopted in mask graph only comprising a single-photon detector structural unit
The processing of large area single-photon detectors is realized with the mode of stepping photoetching.Or mask graph is divided to two pieces of mask compositions,
One piece is large-area nano cable architecture, and one piece is its corresponding electrode structure.It can be realized using the mode of two step photoetching big
The processing of area single-photon detectors.Nanowire structure can be first obtained, then photoetching once obtains electrode and remaining label etc.
Structure.Electrode and mark structure can also be first obtained, then obtains nanowire structure.Wherein mask is the business mask of standard
Version, can process large area (multiple cellular construction compositions) single-photon detector structure on one piece of mask；It can also be only
Process a single-photon detector structural unit；Two can also be processed with separate machined electrode designations structure and nanowire structure
Block mask.
The nano wire superconductor detector structure in imaging arrangement is smoothly transferred to reflection aid imaging in the step (7)
In layer, ion beam etching (IBE) or sense coupling (ICP) Lai Shixian can use.Etch selected gas
It can be SF6、CHF3Or Ar.
The nanowire single photon detector structure reflected in aid imaging layer is transmitted to bottom superconduction in the step (8)
In film layer, IBE etching or reactive ion beam etching (RIBE) (RIE) Lai Shixian can use.Etching selected gas can be SF6、CHF3、
C4F8Or Ar.
The remaining metal material of removal can use HNO in the step (9)3Or chrome liquor is removed to be removed.
Compared with the prior art, the invention has the advantages that:
The present invention can overcome the processing of the single-photon detector structure of hundred nanometer scale of resolving power, mainly use electron beam
Processing efficiency brought by exposure technique is low, process equipment and processing cost valuableness problem.This method only needs conventional
Plated film, gluing and etching transmitting, so that it may prepare hundred nanometers and more high resolution superconducting single-photon detector structure, expand
The application range of surface plasma photoetching technology, while providing the superconducting single-photon detector of a kind of large area, low cost
Processing method provides a kind of approach for the application demand of Mirae Corp. SNSPD.
Detailed description of the invention
Fig. 1 is the process of the preparation method of the superconducting nano-wire single-photon detector of a kind of large area of the present invention, low cost
Figure；
Fig. 2 is the super resolution lithography schematic diagram in the embodiment of the present invention 1；
Fig. 3 is the super resolution lithography schematic diagram in the embodiment of the present invention 2, wherein Fig. 3 (a) is nano wire super resolution lithography
Schematic diagram, Fig. 3 (b) are electrode and label super resolution lithography schematic diagram；
Fig. 4 is the simulation effect picture in the embodiment of the present invention；
Fig. 5 is the single-photon detectors structure chart processed in the embodiment of the present invention.
In figure: 1 is imageable substrate material, and 2 be superconducting thin film layer, and 3 reflect aid imaging film layer for bottom, and 4 be imaging layer,
5 be transmission-type aid imaging film layer, and 6 be photolithographic mask layer, and 7 be mask arrangement figure, and 8 be mask substrate, and 9 be illuminating bundle.
Specific embodiment
With reference to the accompanying drawing and the present invention is discussed in detail in specific embodiment.But embodiment below is only limitted to explain this hair
Bright, protection scope of the present invention should include the full content of claim, and pass through following embodiment those skilled in the art
The full content of the claims in the present invention can be thus achieved.
Embodiment 1
As shown in Figure 1, the preparation side of the superconducting nano-wire single-photon detector of a kind of large area of the invention, low cost
Method, specific implementation step are as follows:
(1) as shown in Fig. 2, imageable substrate material 1 is silica base material；Superconducting thin film layer 2 is the superconducting thin film of preparation
Layer structure, with a thickness of 5nm；Bottom reflection aid imaging film layer 3 is the reflection aid imaging Ag film layer of preparation, thickness 50nm；At
As layer 4 is imaging 3170 photoresist layer of AR-P, film thickness 100nm；Transmission-type aid imaging film layer 5 is that the transmission of preparation upper layer is auxiliary
Furtherance is as metal Ag film layer, film thickness 20nm；Photolithographic mask layer 6, mask arrangement figure 7, mask substrate 8 are to make in photoetching process
Mask arrangement, wherein mask substrate 8, material are quartz, and photolithographic mask layer 6 is the chrome mask structure of processing, mask arrangement
Figure 7 is the single-photon detector structure in mask, and wherein the nano wire period is 100nm, line width 50nm；9 be illuminating bundle.
(2) super resolution lithography and developing process are utilized, entire large area single-photon detector is obtained in imaging layer
Structure is transmitted in Ag layers of aid imaging metal of bottom reflection by once etching, and lithographic method is etched using IBE；Then two
Secondary etching is transmitted in bottom superconducting thin film NbN, and lithographic method is ICP etching；Residual materials are removed with nitric acid solution, thus
Obtain large area superconducting nano-wire single-photon detector structure.Then, it is cut, is cut into multiple according to cellular construction size
Cellular construction carry out using.
(3) the structure simulation imaging arrangement in above-described embodiment is in Figure of description shown in Fig. 4, wherein Cr, Ag, imaging
The dielectric constant of layer is respectively -8.55+8.96i, -2.4012+0.2488i, 2.59.From fig. 4, it can be seen that being set using present case
The super-resolution imaging structure of meter, realizes good image quality in imaging layer.
Embodiment 2
As shown in Figure 1, the preparation side of the superconducting nano-wire single-photon detector of a kind of large area of the invention, low cost
Method, specific implementation step are as follows:
(1) as shown in Fig. 3 (a), imageable substrate material 1 is PDMS base material；Superconducting thin film layer 2 is the superconduction of preparation
WSi film layer structure, with a thickness of 50nm；Bottom reflection aid imaging film layer 3 is the reflection aid imaging Au film layer of preparation, thickness
60nm；Imaging layer 4 is imaging PHS-41 photoresist layer, film thickness 50nm；Transmission-type aid imaging film layer 5 is the transmission of preparation upper layer
Aid imaging metal Ag film layer, film thickness 15nm；Photolithographic mask layer 6, mask arrangement figure 7, mask substrate 8 are in photoetching process
The mask arrangement used, wherein mask substrate 8, material are aluminium oxide, and photolithographic mask layer 6 is the chrome mask structure of processing, mask
Structure graph 7 is the nanowire structure in mask, and wherein the nano wire period is 200nm, line width 100nm；Mask in Fig. 3 (b)
Structure graph 7 is electrode and marker mask structure in single-photon detector, and the other structures in Fig. 3 (b) are identical as Fig. 3 (a).9
For illuminating bundle.
(2) as shown in Fig. 3 (a), step 1 first carries out a super resolution lithography technique, by the single photon detection in Fig. 3 (a)
Nanowire structure photoetching in device is in imaging layer, without development, directly carries out step 2 super resolution lithography according to Fig. 3 (b),
By electrode in figure and label photoetching in imaging layer, primary development obtains entire single-photon detector structure.By once etching
It is transmitted to bottom to reflect in Au layers of aid imaging metal, lithographic method is etched using ICP；Then the secondarily etched bottom that is transmitted to surpasses
It leads in film WSi, lithographic method is RIE etching；Chrome liquor solution removal residual materials are spent, to obtain superconducting nano-wire list
Photon detector structure.It is then cut into individual unit structure and carries out subsequent applications.
What the present invention did not elaborated partly belongs to techniques well known.
Claims (14)
1. a kind of preparation method of the superconducting nano-wire single-photon detector of large area, low cost, it is characterised in that: this method packet
Include following steps:
Step (1) selects smooth substrate；
Step (2) substrate surface prepare one layer of superconducting thin film, superconducting thin film layer with a thickness of d1=2~100nm；
Step (3) prepares one layer of reflective aid imaging film layer, thickness d on superconducting thin film layer2=10~100nm；Control surface
Ping Zheng Du≤2nm；
Step (4) prepares one layer of imaging film layer in reflective aid imaging film layer, controls glue thickness d3=15~150nm；
Step (5) continues to prepare one layer of transmission-type aid imaging film layer in imaging film layer, with a thickness of d4=10~100nm；
Step (6) utilizes surface plasma photoetching technology, and development obtains required superconducting nano-wire monochromatic light in imaging film layer
Sub- panel detector structure, obtained nanowire single photon detector structure: area d5=0.05mm~100mm, electrode pattern are wide
Spend d6=1 μm~500 μm, nanometer line graph period d7=40nm~500nm, line width d8=15~300nm；
Step (7) performs etching single-photon detector structure obtained in step (6), and the panel detector structure in imaging layer is turned
It moves on in bottom reflection aid imaging film layer；
It is secondarily etched that step (8) reflects the progress of the single-photon detector structure in aid imaging film layer obtained in step (7)
Transmitting, detector graphic structure is transmitted in the superconductor of bottom；
Remaining reflection aid imaging film material is removed by step (9) by chemical method, thus in superconducting thin film material
Final superconducting nano-wire single-photon detector is obtained in material.
2. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost,
It is characterized by: the base material in the step (1) can be silicon base, quartz substrate, magnesium fluoride substrate and all kinds of soft
Property base material.
3. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 2, low cost,
It is characterized by: flexible base material therein refer to good planarization, without large area defect, have certain deformability
Material.
4. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost,
It is characterized by: the superconducting thin film layer prepared in the step (2) can pass through magnetron sputtering deposition, chemical vapor deposition or original
Prepared by the mode of sublayer deposition, superconduction film layer can be NbN, WSi material with superconducting characteristic that is also possible to other.
5. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost,
It is characterized by: material described in the reflective aid imaging film layer prepared in the step (3) can be Ag, Au or other and have
The material that dielectric constant is negative, processing method can also be with by magnetron sputtering deposition, atomic layer deposition, chemical vapor deposition
Select the mode of vacuum evaporation deposition.
6. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost,
It is characterized by: imaging film layer prepared in the step (4) can be AR series, AZ series or PMMA series of photosensitive material
Material.
7. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost,
It is characterized by: the transmission-type aid imaging film layer prepared in the step (5) can be prepared directly in imaging film layer, it can also
It, can be in such a way that magnetron sputtering plating also can choose vacuum evaporation to prepare on mask graph layer.
8. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 7, low cost,
It is characterized by: the transmission-type aid imaging film material wherein prepared can be Ag, Au or other are negative with dielectric constant
Material.
9. the preparation method of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost,
It is characterized by: the surface plasma photoetching technology used in the step (6), wherein according to used mask figure
Shape determines photoetching mode.
10. the preparation side of the superconducting nano-wire single-photon detector of a kind of large area according to claim 9, low cost
Method, it is characterised in that: wherein, include large area, multiple cellular construction single-photon detector structures in mask graph, can use
Single photoetching mode come realize different structure characteristic size large area single-photon detectors processing, by the large area after processing
Device architecture is cut according to each cellular construction, to can process dozens of structure list by a photolithographic procedures
Member improves processing efficiency；Alternatively, only including a single-photon detector structural unit in mask graph, stepping light can be used
The mode at quarter realizes the processing of large area single-photon detectors, i.e. one device cell of stepping time processing, multiple stepping
The preparation of entire broad area device is completed, each cellular construction equally, after processing is cut into and carries out next step process；Alternatively, covering
Mould figure is divided to two pieces of masks composition, and one piece is large-area nano cable architecture, and one piece is its corresponding electrode designations structure, can be with
The processing of large area single-photon detectors is realized using the mode of Twi-lithography, it can first photoetching acquisition nanowire-junction
Structure, photoetching obtains the structures such as electrode and remaining label again, can also first obtain electrode and mark structure, then obtain nano wire
Structure, cutting uses after the completion.
11. the preparation side of the superconducting nano-wire single-photon detector of a kind of large area according to claim 10, low cost
Method, it is characterised in that: wherein mask is the business mask of standard, and it is (more can to process large area on one piece of mask
A cellular construction composition) single-photon detector structure；A single-photon detector structural unit can also only be processed；It can also divide
Machined electrode mark structure and nanowire structure are opened, that is, processes two pieces of masks.
12. the preparation side of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost
Method, it is characterised in that: in the step (7) by the nano wire superconductor detector structure in imaging arrangement smoothly be transferred to reflection it is auxiliary
It helps in imaging layer, can use ion beam etching (IBE) or sense coupling (ICP) Lai Shixian.Etching institute
Gas is selected to can be SF6、CHF3Or Ar.
13. the preparation side of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost
Method, it is characterised in that: the nanowire single photon detector structure reflected in aid imaging layer is transmitted to bottom in the step (8)
In layer superconduction film layer, IBE etching or reactive ion beam etching (RIBE) (RIE) Lai Shixian can use, etching selected gas can be
SF6、CHF3、C4F8Or Ar.
14. the preparation side of the superconducting nano-wire single-photon detector of a kind of large area according to claim 1, low cost
Method, it is characterised in that: the remaining metal material of removal can use HNO in the step (9)3Or chrome liquor is removed to be removed.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024060362A1 (en) * | 2022-09-20 | 2024-03-28 | 中国科学院光电技术研究所 | Super-resolution photoetching structure, manufacturing method, and pattern transfer method |
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| WO2024060362A1 (en) * | 2022-09-20 | 2024-03-28 | 中国科学院光电技术研究所 | Super-resolution photoetching structure, manufacturing method, and pattern transfer method |
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