CN107230932A - The Cavity surface preparation method and its Cavity surface preparation facilities of semiconductor laser - Google Patents
The Cavity surface preparation method and its Cavity surface preparation facilities of semiconductor laser Download PDFInfo
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- CN107230932A CN107230932A CN201710572640.3A CN201710572640A CN107230932A CN 107230932 A CN107230932 A CN 107230932A CN 201710572640 A CN201710572640 A CN 201710572640A CN 107230932 A CN107230932 A CN 107230932A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
Abstract
The Cavity surface preparation method and its Cavity surface preparation facilities of a kind of semiconductor laser, wherein method comprise the following steps：Stroke chip for having cleavage line is put into cleavage chamber, cleavage chamber is according to cleavage line, and cleavage obtains at least one bar bar；At least one bar bar is sent to passivation chamber, with two passivating cavity surfaces to each bar bar；At least one above-mentioned bar bar is sent to plating membrane cavity, two Cavity surfaces of each of which are deposited with high-reflecting film and high transmittance film respectively, be prepared by the Cavity surface for completing semiconductor laser；Wherein, cleavage chamber, passivation chamber and plating membrane cavity are in vacuum state.Noise spectra of semiconductor lasers carries out cleavage and passivation to the present invention under vacuum, and the optical film of Cavity surface before and after semiconductor laser is directly deposited in a vacuum, can be prevented effectively from its with air contact, avoid the Cavity surface of new cleavage from being polluted by impurity such as the oxygen and carbon in air, Cavity surface formation surface state is avoided, so as to effectively suppress the generation of Cavity surface catastrophic optical damage.
Description
Technical field
The invention belongs to plating films on cavity surfaces of semiconductor lasers field, relate more specifically to a kind of Cavity surface of semiconductor laser
Preparation method and its Cavity surface preparation facilities.
Background technology
High power semiconductor lasers are widely used in light-pumped solid state laser, optical fiber laser, material processing and laser
The fields such as medical treatment.High-output power and long-term reliability are that high power semiconductor lasers are able to wide variety of premise, but half
In the production and use process, Cavity surface can occur to degenerate to produce Cavity surface catastrophic optical damage (COD) conductor laser, for big work(
For rate semiconductor laser, Cavity surface catastrophic optical damage is always the key factor of a limitation peak power output and reliability.
COD generation is due to the oxygen in films on cavity surfaces of semiconductor lasers cleavage in atmosphere, Cavity surface and air contact, air
Atom, carbon atom and vapor can be contaminated Cavity surface so as to form defect i.e. surface state at Cavity surface, and these are all non-spokes
Penetrate compound center.These surface states can turn into electrical pumping Carrier Trapping Centers between band gap so that current-carrying
Son can spread to Cavity surface.These carriers can absorb photon during the gain of light and produce electron hole pair, so as to produce non-
Radiation recombination, causes temperature at Cavity surface to raise；On the one hand Cavity surface heating can cause the defect motion and local heating of Cavity surface, another
Aspect can make the band-gap narrowing of Cavity surface material, so as to aggravate photonic absorption, Cavity surface temperature is further raised.When power output reaches
During to a certain degree, this process enters vicious circle, ultimately results in the damage of Cavity surface catastrophic optical damage (COD) this irrecoverability
Wound.
The purpose of deactivation of semiconductor laser cavity surface technique is, reduces the defect of films on cavity surfaces of semiconductor lasers, reduces table
Face state.Current passivation technology includes sulfur passivation, ion passivation, oxygen passivation and nitrogen passivation etc..But the stabilization of these passivating methods
Property and reliability be not very effectively, and remove surface state, reduce defect in terms of be not very perfect.
The content of the invention
Based on problem above, it is a primary object of the present invention to propose a kind of semiconductor laser Cavity surface preparation method and
Its Cavity surface preparation facilities, for solving at least one of above technical problem.
To achieve these goals, as one aspect of the present invention, the present invention proposes a kind of chamber of semiconductor laser
Noodle producing method, comprises the following steps：
Step 1, by draw have cleavage line a chip be put into cleavage chamber, the cleavage chamber is according to cleavage line, and cleavage obtains at least one
Individual bar bars；
Step 2, at least one bar bar is sent to passivation chamber, with two passivating cavity surfaces to each bar bar；
Step 3, at least one bar bar in step 2 is sent to plating membrane cavity, with two Cavity surfaces to each bar bar
Evaporation high-reflecting film and high transmittance film, complete the Cavity surface preparation of semiconductor laser respectively；
Wherein, cleavage chamber, passivation chamber, plating membrane cavity and whole transmit process local environment are in vacuum state.
In some embodiments of the invention, the vacuum of above-mentioned cleavage chamber, passivation chamber and plating membrane cavity is at least 10- 9Torr。
In some embodiments of the invention, when in above-mentioned steps 2 to two passivating cavity surfaces of each bar bar, use
Passivating material include ZnSe or Si.
In some embodiments of the invention, when in above-mentioned steps 2 to two passivating cavity surfaces of each bar bar, use
Passivating material be ZnSe.
In some embodiments of the invention, the above-mentioned stroke of wafer size for having cleavage line is：Long 20~50mm, wide by 10~
20mm。
In some embodiments of the invention, length direction cycle arrangement of the above-mentioned cleavage line along chip；Adjacent two solutions
Manage line at intervals of 500~1500 μm.
In some embodiments of the invention, the length of above-mentioned cleavage line is 300-600 μm.
In some embodiments of the invention, the material of main part of above-mentioned high transmittance film includes Al2O3Or SiO2；High-reflecting film for it is high/
Alternately evaporation is formed low-index material；Preferably, above-mentioned high/low refraction materials are quarter-wave high and low refraction
Rate material.
To achieve these goals, as another aspect of the present invention, the present invention proposes a kind of semiconductor laser
Cavity surface preparation facilities, including be integrated in vacuum pipe, the sample cavity that is connected by valve with vacuum pipe, transmission cavity, cleavage
Chamber, passivation chamber and plating membrane cavity；And in vacuum pipe：
First mechanical arm, has the chip of cleavage line to be sent to transmission cavity from sample cavity for that will draw；
Second mechanical arm, has the chip of cleavage line to be sent to cleavage chamber from transmission cavity, with according to cleavage line solution for that will draw
Reason obtains at least one bar bar；
Three-mechanical arm, at least one bar bar to be sent into passivation chamber from cleavage chamber, with to each bar bar
Two passivating cavity surfaces；
4th mechanical arm, at least one bar bar self-passivation chamber after passivation to be sent into plating membrane cavity, with to each
High-reflecting film and high transmittance film is deposited in two Cavity surfaces of bar bars respectively.
In some embodiments of the invention, above-mentioned sample cavity, transmission cavity, cleavage chamber, passivation chamber, plating membrane cavity and vacuum tube
Road is when prepared by the Cavity surface for carrying out semiconductor laser, and vacuum is at least 10-9Torr。
The Cavity surface preparation method and its Cavity surface preparation facilities of semiconductor laser proposed by the present invention, with following beneficial effect
Really：
1st, noise spectra of semiconductor lasers carries out cleavage and passivation under vacuum, and directly evaporation semiconductor swashs in a vacuum
The optical film of Cavity surface before and after light device, can be prevented effectively from its with air contact, avoid the Cavity surface of new cleavage by the oxygen and carbon in air
Polluted Deng impurity, it is to avoid Cavity surface formation surface state, so as to effectively suppress the generation of Cavity surface catastrophic optical damage；
2nd, using ZnSe materials as passivating film, efficiently utilize ZnSe material films physics and chemical characteristic it is excellent
Gesture, you can effectively prevent pollution of the water vapor in air to Cavity surface, and passivation layer temperature distortion after being prevented effectively from because of passivation and
Passivation effect is reduced, so as to further improve life-span and the stability of semiconductor laser.
Brief description of the drawings
Fig. 1 is the simple structure schematic diagram of the Cavity surface preparation facilities for the semiconductor laser that one embodiment of the invention is proposed；
Fig. 2 is partly the leading of preparing of Cavity surface preparation method of the semiconductor laser proposed according to one embodiment of the invention
Body laser, in the profile perpendicular to front and rear Cavity surface direction；
Fig. 3 (a) is the P-I-V performance diagrams for the tube core that existing preparation technology is obtained；
Fig. 3 (b) is the P-I-V characteristic curves for the tube core that the Cavity surface preparation method that one embodiment of the invention is proposed is prepared
Figure.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
It is to carry out cleavage in atmosphere in general semiconductor laser Cleaving Process, then puts into coating machine and be deposited
Front and rear Cavity surface optical film.During Cavity surface optical thin film before and after evaporation semiconductor laser, it usually needs will be deposited blunt
The semiconductor laser bar bars for changing film are transported in atmosphere, are placed into another special coating machine, then carry out front and rear chamber
The evaporation of face optical film.Cavity surface and air during due to cleavage in atmosphere and in transportation after semiconductor laser passivation
Contact, can have certain pollution, so as to cause Cavity surface catastrophic optical damage (COD) to passivating film.But if cleavage is partly led in a vacuum
Body laser and Cavity surface optical film before and after directly evaporation is carried out after evaporation passivation film, semiconductor laser can be avoided
Bar bars in transportation with air contact so that further improve semiconductor laser reliability.
ZnSe materials have advantages below：1st, possess 2.75eV big energy gap, can be effectively formed to iii-v half
The potential barrier of conductor laser Cavity surface；2nd, there is very high ability to bear to thermal shock, temperature distortion is small；3rd, the light of ZnSe thin-film materials
Attenuation coefficient is small, with performance of 0.5~22 μm of the infrared ray through " window ", extinction coefficient K=0.14, it is possible to reduce film
Absorption to light；4th, it is water insoluble, it can effectively prevent pollution of the water vapor in air to Cavity surface.Therefore it is straight after vacuum cleavage
It is connected on films on cavity surfaces of semiconductor lasers evaporated film to be passivated, utilizes the big energy gap and good film of ZnSe material films
Stability, has the shortcomings that good passivation effect and stability and overcomes conventional passivation method, by using ZnSe materials
The above-mentioned physics and chemical characteristic of material can also further improve life-span and the stability of semiconductor laser.
Therefore, the present invention proposes a kind of Cavity surface preparation method of semiconductor laser, comprises the following steps：
Step 1, by draw have cleavage line a chip be put into cleavage chamber, the cleavage chamber obtains at least one according to cleavage line cleavage
Bar bars；
Step 2, at least one bar bar is sent to passivation chamber, with two passivating cavity surfaces to each bar bar；
Step 3, at least one bar bar in step 2 is sent to plating membrane cavity, with two Cavity surfaces to each bar bar
Evaporation high-reflecting film and high transmittance film, complete the Cavity surface preparation of semiconductor laser respectively；
Wherein, cleavage chamber, passivation chamber and plating membrane cavity are in vacuum state, and the transmitting procedure of chip and bar bars exists
Carried out under vacuum environment.
In some embodiments of the invention, the vacuum of above-mentioned cleavage chamber, passivation chamber and plating membrane cavity is at least 10- 9Torr；So as to be prevented effectively from contact of the films on cavity surfaces of semiconductor lasers with air, avoid the Cavity surface of new cleavage by the oxygen in air
Pollute to form surface state with the impurity such as carbon, so as to effectively suppress the generation of Cavity surface catastrophic optical damage.
In some embodiments of the invention, when in above-mentioned steps 2 to two passivating cavity surfaces of each bar bar, use
Passivating material include ZnSe or Si；Preferably, the passivating material used is ZnSe；It is thin so as to effectively utilize ZnSe materials
The physics of film and the advantage of chemical characteristic, effectively prevent pollution of the water vapor in air to Cavity surface, and be prevented effectively from because after passivation
Passivation layer temperature distortion and reduce passivation effect, so as to can further improve life-span and the stability of semiconductor laser.
In some embodiments of the invention, the above-mentioned stroke of wafer size for having cleavage line is：Long 20~50mm, wide by 10~
20mm；Wherein, the width for the bar bars that width correspondence cleavage is obtained.
In some embodiments of the invention, length direction cycle arrangement of the above-mentioned cleavage line along chip；Adjacent two solutions
Manage line at intervals of 500~1500 μm, the chamber for the bar bars that homographic solution reason in this interval is obtained is long, therefore the interval can be long according to chamber
Need rationally to be designed.
In some embodiments of the invention, the length of above-mentioned cleavage line is 300-600 μm.
In some embodiments of the invention, the material of main part of above-mentioned high transmittance film includes Al2O3Or SiO2；High-reflecting film for it is high/
Alternately evaporation is formed low-index material；Preferably, above-mentioned high/low refraction materials are quarter-wave high and low refraction
Rate material.
Cavity surface preparation method based on above-mentioned semiconductor laser, the present invention also proposes a kind of chamber of semiconductor laser
Face preparation facilities, including：
Sample cavity, transmission cavity, cleavage chamber, the passivation chamber be integrated in vacuum pipe, being connected by valve with vacuum pipe
And plating membrane cavity；And in vacuum pipe：
First mechanical arm, has the chip of cleavage line to be sent to transmission cavity from sample cavity for that will draw；
Second mechanical arm, has the chip of cleavage line to be sent to cleavage chamber from transmission cavity, with according to cleavage line solution for that will draw
Reason obtains at least one bar bar；
Three-mechanical arm, at least one bar bar to be sent into passivation chamber from cleavage chamber, with to each bar bar
Two passivating cavity surfaces；
4th mechanical arm, at least one bar bar self-passivation chamber after passivation to be sent into plating membrane cavity, with to each
High-reflecting film and high transmittance film is deposited in two Cavity surfaces of bar bars respectively.
The device is used to operate the Cavity surface for completing above-mentioned semiconductor laser to prepare.
In some embodiments of the invention, when prepared by the Cavity surface for carrying out semiconductor laser, first to whole device
Vacuumize, then open the first valve between sample cavity and transmission cavity, by the action bars of first mechanical arm, make described first
Mechanical arm will draw the chip for having cleavage line and be sent to transmission cavity from sample cavity, be then shut off the first valve；Open again transmission cavity with
The second valve between cleavage chamber, by the action bars of second mechanical arm, make second mechanical arm will draw the chip that has cleavage line from
Transmission cavity is sent to cleavage chamber, simultaneously closes off the second valve, and cleavage chamber obtains at least one bar bar according to cleavage line cleavage；Beat
Unwind reason chamber and passivation chamber between the 3rd valve, by the action bars of three-mechanical arm, make three-mechanical arm by least one
Bar bars are sent to passivation chamber from cleavage chamber, simultaneously close off the 3rd valve, two passivating cavity surfaces of the passivation chamber to each bar bar；
Then the 4th valve between passivation chamber and plating membrane cavity is opened, by the action bars of the 4th mechanical arm, makes the 4th mechanical arm will be blunt
At least one bar bar self-passivation chamber after change is sent to plating membrane cavity, simultaneously closes off the 4th valve, plating membrane cavity is to each bar bar
Two Cavity surfaces be deposited high-reflecting film and high transmittance film respectively, it is prepared by the Cavity surface for completing semiconductor laser.Wherein, each mechanical arm
Action bars is exposed at outside whole vacuum equipment, and manipulation is convenient.
In some embodiments of the invention, propose a kind of based on ZnSe material films, high power semiconductor lasers
, Cavity surface vacuum cleavage passivation film plating process, this method is passivated coating machine, including following steps using vacuum cleavage：
Step S1, cleavage line is marked on laser wafer；
Step S2, the semiconductor laser chip for pulling cleavage line is put on special fixture, then puts the fixture
Onto the special racks of vacuum cleavage coating machine, then put it into vacuum cleavage coating machine, coating machine is passivated to vacuum cleavage
Cavity vacuumized, it is desirable to vacuum reaches 10-9More than Torr；
The semiconductor laser chip of step S3, in a vacuum cleavage feeding, and the semiconductor laser that cleavage is produced
Bar bars are sent to passivation chamber, ZnSe passivating material films are deposited in its Cavity surface, it is desirable in passivation technology, are passivated the vacuum of chamber
At least 10-9Torr。
After the completion of step S4, passivation, by conveyer, semiconductor laser bar bars are delivered in optical coating chamber,
Anti-reflection film, rear facet evaporation high-reflecting film is deposited in the front facet of semiconductor laser bar bars.
In such scheme, ZnSe thin-film materials in step S3 as being passivated semiconductor laser in a vacuum after vacuum cleavage
The passivation membrane material of device.
Below by way of specific embodiment, to the Cavity surface preparation method and its Cavity surface system of semiconductor laser proposed by the present invention
Standby device is described in detail.
Embodiment
As shown in figure 1, the present embodiment proposes a kind of Cavity surface preparation facilities 10 of semiconductor laser, including：
Sample cavity 101, transmission cavity 102, the cleavage chamber be integrated in vacuum pipe, being connected by valve with vacuum pipe
103rd, passivation chamber 104 and plating membrane cavity 105；And in vacuum pipe：
First mechanical arm 106, has the chip of cleavage line to be sent to transmission cavity from sample cavity for that will draw；
Second mechanical arm 107, has the chip of cleavage line to be sent to cleavage chamber from transmission cavity, with according to cleavage line for that will draw
Cleavage obtains at least one bar bar；
Three-mechanical arm 108, at least one bar bar to be sent into passivation chamber from cleavage chamber, with to each bar bar
Two passivating cavity surfaces；
4th mechanical arm 109, at least one bar bar self-passivation chamber after passivation to be sent into plating membrane cavity, with to it
High-reflecting film and high transmittance film is deposited in two Cavity surfaces of each respectively.
Specifically, first mechanical arm 106 need to open sample cavity before transmission is drawn and has chip to the transmission cavity 102 of cleavage line
The first valve 110 between 101 and transmission cavity 102, Transfer pipe is the first vacuum pipe 114, after the completion of transmission, closes the
One valve 110；Second mechanical arm 107 need to first open the second valve before transmission is drawn and has chip to the cleavage chamber 103 of cleavage line
111, Transfer pipe is the second vacuum pipe 115, after the completion of transmission, closes the second valve 111；Three-mechanical arm 108 is being passed
Send bar bars to being passivated before chamber 104, need to first open the 3rd valve 112, Transfer pipe is the 3rd vacuum pipe 116, transmission is completed
Afterwards, the 3rd valve 112 is closed；4th mechanical arm 109 need to first open the 4th before bar articles after transmission is passivated to plating membrane cavity 105
Valve 113, Transfer pipe is the 4th vacuum pipe 117, after the completion of transmission, closes the 4th valve 113.
Using said apparatus, specifically, the present embodiment also proposes a kind of Cavity surface preparation method of semiconductor laser, specifically
Comprise the following steps：
Step 1, by draw have cleavage line a chip be put into cleavage chamber 103, the cleavage chamber 103 according to cleavage line cleavage obtain to
A few bar bar；Specifically include following steps：
Step 11, the chip for pulling cleavage line is put on special fixture, puts it to the special of vacuum cleavage coating machine
It is put into on shelf, then by shelf in sample cavity 101；Close after chamber door, opened vavuum pump and vacuumize, make semiconductor laser
Cavity surface preparation facilities total vacuum be higher than 10-9Torr；
The first valve 110 between step 12, opening sample cavity 101 and transmission cavity 102, will using first mechanical arm 106
Chip is sent in transmission cavity 102 via the first vacuum pipe 114, the first valve closed between sample cavity 101 and transmission cavity 102
110；
Chip, is sent in cleavage chamber 103 and is solved by step 13, the second valve 111 of opening using second mechanical arm 107
Ultra-high vacuum state is always maintained in reason, Cleaving Process, vacuum is higher than 10-9Torr, swashs semiconductor along 400 μm of cleavage line
Light device chip is cleaved into bar bars；
Step 2, by least one bar bar be sent to passivation chamber 104, with two passivating cavity surfaces to each bar bar；Tool
Body is：
The 3rd valve 112 is opened, is sent in passivation chamber 104 for bar articles by semiconductor laser using three-mechanical arm 108
Row passivation, 50nm ZnSe passivating materials film 203 is deposited in Cavity surface 201,202 before and after bar bars, and passivation chamber is kept during evaporation
Temperature in 104 is 150 DEG C, and the heating-up temperature of ZnSe materials is 800 DEG C；In passivating process, ZnSe materials are controlled using liquid nitrogen
The heating-up temperature of material；After the completion of passivation, heating source is closed, the temperature for being passivated chamber 104 and ZnSe materials is dropped into room temperature；
Step 3, at least one bar bar in step 2 is sent to plating membrane cavity 105, to two Cavity surfaces of each of which point
Zheng Du not high-reflecting film and high transmittance film, the Cavity surface preparation of completion semiconductor laser；Specially：
After the temperature of passivation chamber 104 drops to room temperature, the 4th valve between passivation chamber 104 and plating membrane cavity 105 is opened
113, bar articles of semiconductor laser being passivated is put into plating membrane cavity 105 using the 4th mechanical arm 109, as shown in Fig. 2
Quarter-wave Al is deposited in bar bars front facet 2012O3Anti-reflection film 204, then turn-over, 8 layers four points are deposited in rear facet 202
One of the alternate high-reflecting film 205 of the high low-refraction of wavelength, high refractive index film therein is that Si, low birefringent thin film are Al2O3.Steam
Plate after front and rear Cavity surface optical film and plating membrane cavity 105 is cooled into room temperature, the semiconductor laser finally given is perpendicular to front and rear
The profile in Cavity surface direction is as shown in Figure 2.
Wherein, the chip for pulling cleavage line is prepared as：By InGaAs/GaAs/InGaAs laser epitaxial pieces in air
Middle cleavage turns into a length of 30mm, chip (the specific size of the chip and fixture and the litho pattern of a width of 10mm rectangular shape
It is related)；In its P face, along its length, every 1500 μm (laser chamber length) standardized bar cleavage line 400 μm long.
The semiconductor laser bar bars that good front and rear Cavity surface optical thin film is deposited are taken out from plating membrane cavity 105.By its cleavage
Into single tube tube core, it is ceramic it is excessively heat sink on encapsulate after tested, and with cleavage in atmosphere and be not passivated, it is direct
The semiconductor single die of Cavity surface optical film compares before and after being deposited in coating machine, such as shown in Fig. 3 (a), finds cleavage in air
Tube core fails in operating current 10A；And as shown in Fig. 3 (b), semiconductor single die manufactured in the present embodiment does not have still in 15A
There is failure.
Then two kinds of semiconductor single dies are carried out with degradation, degradation electric current is 8A.It was found that cleavage is not in air
The life-span of the semiconductor single die of the front and rear Cavity surface optical film of passivation and directly evaporation is 1000 hours；And vacuum cleavage, application
The life-span of the semiconductor single die of Cavity surface optical thin film is more than 3000 hours before and after ZnSe materials are passivated and are directly deposited,
Therefore, the reliability of the corresponding semiconductor laser of the preparation method of the present embodiment is obviously improved.
In summary, the present embodiment propose this vacuum in cleavage, using ZnSe material films be passivated Cavity surface and
In vacuum directly before and after evaporation semiconductor laser Cavity surface optical thin film method because avoiding as far as possible in cleavage, blunt
Contact before and after changing and being deposited during Cavity surface optical thin film with air, therefore semiconductor laser is reduced to greatest extent
The possibility that bar bars are polluted by impurity such as oxygen in air and carbon, effectively reduces the surface density of states of films on cavity surfaces of semiconductor lasers,
And the good physics of membrane material and chemical characteristic are passivated using ZnSe, the stability of vacuum cleavage passivating film is improved, thus
Improve the stability and reliability of semiconductor laser.
Particular embodiments described above, has been carried out further in detail to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc. should be included in the protection of the present invention
Within the scope of.
Claims (10)
1. a kind of Cavity surface preparation method of semiconductor laser, comprises the following steps：
Step 1, by draw have cleavage line a chip be put into cleavage chamber, the cleavage chamber is obtained at least according to the cleavage line, cleavage
One bar bar；
Step 2, at least one described bar bar is sent to passivation chamber, with two passivating cavity surfaces to bar bars each described；
Step 3, at least one bar bar described in step 2 is sent to plating membrane cavity, with two to bar bars each described
High-reflecting film and high transmittance film is deposited in Cavity surface respectively, prepared by the Cavity surface for completing the semiconductor laser；
Wherein, the cleavage chamber, passivation chamber, plating membrane cavity and whole transmit process local environment are vacuum state.
2. the Cavity surface preparation method of semiconductor laser as claimed in claim 1, wherein, the cleavage chamber, passivation chamber and plating
The vacuum of membrane cavity is at least 10-9Torr。
3. the Cavity surface preparation method of semiconductor laser as claimed in claim 1, wherein, to bar each described in step 2
During two passivating cavity surfaces of bar, the passivating material of use includes ZnSe or Si.
4. the Cavity surface preparation method of semiconductor laser as claimed in claim 3, wherein, to bar each described in step 2
During two passivating cavity surfaces of bar, the passivating material used is ZnSe.
5. the Cavity surface preparation method of semiconductor laser as claimed in claim 1, wherein, described stroke have cleavage line chip chi
It is very little to be：Long 20~50mm, wide 10~20mm.
6. the Cavity surface preparation method of semiconductor laser as claimed in claim 5, wherein, the cleavage line is along the chip
The length direction cycle arranges；Adjacent two cleavage lines at intervals of 500~1500 μm.
7. the Cavity surface preparation method of semiconductor laser as claimed in claim 5, wherein, the length of the cleavage line is 300-
600μm。
8. the Cavity surface preparation method of semiconductor laser as claimed in claim 1, wherein, the material of main part bag of the high transmittance film
Include Al2O3Or SiO2；The high-reflecting film is that alternately evaporation is formed high/low refraction materials；Preferably, the high/low refractive index material
Expect for quarter-wave high and low refractive index material.
9. a kind of Cavity surface preparation facilities of semiconductor laser, including：
Sample cavity, transmission cavity, cleavage chamber, the passivation chamber be integrated in vacuum pipe, being connected by valve with the vacuum pipe
And plating membrane cavity；And in the vacuum pipe：
First mechanical arm, has the chip of cleavage line to be sent to transmission cavity from the sample cavity for that will draw；
Second mechanical arm, cleavage chamber is sent to for having described stroke the chip of cleavage line from the transmission cavity, with according to described
Cleavage line cleavage obtains at least one bar bar；
Three-mechanical arm, at least one described bar bar to be sent into passivation chamber from the cleavage chamber, with to described in each
Two passivating cavity surfaces of bar bars；
4th mechanical arm, at least one bar bar after the passivation to be sent into plating membrane cavity from the passivation chamber, with to every
High-reflecting film and high transmittance film is deposited in two Cavity surfaces of one bar bar respectively.
10. the Cavity surface preparation facilities of semiconductor laser as claimed in claim 9, wherein, the sample cavity, transmission cavity, solution
Chamber, passivation chamber, plating membrane cavity and the vacuum pipe are managed when prepared by the Cavity surface for carrying out the semiconductor laser, vacuum is at least
For 10-9Torr。
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| CN110752506A (en) * | 2018-06-04 | 2020-02-04 | Ii-Vi特拉华有限公司 | Shift pretreatment of laser facets and passivation devices formed using the same material |
| CN111193184A (en) * | 2019-12-30 | 2020-05-22 | 腾景科技股份有限公司 | Ultra-narrow band ultra-thin reflecting film plated on cavity surface of semiconductor laser and used for mode selection |
| CN112342514A (en) * | 2020-10-19 | 2021-02-09 | 武汉光迅科技股份有限公司 | Semiconductor laser cavity surface coating method and semiconductor laser |
| CN113745965A (en) * | 2020-05-27 | 2021-12-03 | 山东华光光电子股份有限公司 | Method for cleaving and passivating cavity surface of semiconductor laser in liquid environment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110752506A (en) * | 2018-06-04 | 2020-02-04 | Ii-Vi特拉华有限公司 | Shift pretreatment of laser facets and passivation devices formed using the same material |
| CN111193184A (en) * | 2019-12-30 | 2020-05-22 | 腾景科技股份有限公司 | Ultra-narrow band ultra-thin reflecting film plated on cavity surface of semiconductor laser and used for mode selection |
| CN113745965A (en) * | 2020-05-27 | 2021-12-03 | 山东华光光电子股份有限公司 | Method for cleaving and passivating cavity surface of semiconductor laser in liquid environment |
| CN112342514A (en) * | 2020-10-19 | 2021-02-09 | 武汉光迅科技股份有限公司 | Semiconductor laser cavity surface coating method and semiconductor laser |
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