CN103269013A - High-power semiconductor laser unit cavosurface cleavage and passivation method - Google Patents
High-power semiconductor laser unit cavosurface cleavage and passivation method Download PDFInfo
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- CN103269013A CN103269013A CN2013102091250A CN201310209125A CN103269013A CN 103269013 A CN103269013 A CN 103269013A CN 2013102091250 A CN2013102091250 A CN 2013102091250A CN 201310209125 A CN201310209125 A CN 201310209125A CN 103269013 A CN103269013 A CN 103269013A
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Abstract
The invention discloses a high-power semiconductor laser unit cavosurface cleavage and passivation method and belongs to the technical field of semiconductor photoelectronic devices. The high-power semiconductor laser unit cavosurface cleavage passivation method aims to improve the output power of a semiconductor laser unit and improve the COD threshold, the service life and the stability of the high-power semiconductor laser unit on the premise that membrane structures of the front cavosurface and the rear cavosurface of the semiconductor laser unit are not changed basically. According to the method, cleavage is carried out first on semiconductor laser unit bars in a high-vacuum cleavage and passivation coating machine, and then passivation is carried out on the semiconductor laser unit bars directly in a high vacuum to reduce the generation of defects in a semiconductor laser unit bar cleavage process, wherein the defects can affect the stability and the service life of the semiconductor laser unit, and the passivation material used is SiN. The high-power semiconductor laser unit cavosurface cleavage and passivation method can be used in the production and manufacturing field of high-power semiconductor laser units.
Description
Technical field
A kind of high power semiconductor lasers chamber face cleavage passivating method, what particularly point out is the method for direct passivation after a kind of high power semiconductor lasers chip vacuum cleavage, and a kind of passivating film material of passivated semiconductor laser proposed, belong to semiconductor laser photoelectron technology field, comprise semiconductor cavity face coating technique.
Background technology
(1) high power semiconductor lasers is widely used in fields such as light-pumped solid state laser, materials processing and laser medicine.High-output power and long-term reliability are the prerequisites that high power semiconductor lasers is able to extensive use, and chamber face catastrophe optical damage (COD) threshold value of laser is the key factor of limit laser device peak power output and reliability always.
(2) chamber face catastrophe optical damage (COD) is the key factor of a restriction peak power output and reliability for high power semiconductor lasers always.The generation of COD is that to form defective at chamber face place be surface state because the films on cavity surfaces of semiconductor lasers solution is comprehended, can form defective at chamber face place is surface state, the chamber face contacts with oxygen, and the chamber face is understood rapid oxidation and surface density of states is further increased, and these all are non-radiation recombination centers.These surface states can be in it between band gap and become the carrier capture center when electricity injected, so charge carrier can spread to the chamber face.These charge carriers can absorb photon and produce electron hole pair in gain of light process, thereby produce non-radiative compound, cause that face place, chamber temperature raises, the chamber face heats up can make chamber planar defect motion and local heating on the one hand, chamber flooring band gap is shunk, the aggravation photonic absorption further raises the chamber surface temperature.When power output reaches a certain degree, make this process enter vicious circle, finally cause chamber face catastrophe optical damage this irrecoverable property.
(3) deactivation of semiconductor laser cavity surface technology purpose is to reduce the defective of films on cavity surfaces of semiconductor lasers, reduces surface state.Present passivation technology is just like sulfur passivation, ion passivation, oxygen passivation etc.And the stability of these passivating methods and reliability are not fine, and removing surface state, it is not very perfect reducing the defective aspect, and direct noise spectra of semiconductor lasers chamber face carries out the SiN passivation after the vacuum cleavage, utilize big energy gap and the good film stability of SiN, good passivation effect and stability are arranged.
Summary of the invention
The objective of the invention is to provide a kind of method that a kind of cleavage films on cavity surfaces of semiconductor lasers and chamber face carry out passivation protection; make the chamber face of semiconductor laser after cleavage, avoid external pollution as much as possible, improve stability and the reliability of high power semiconductor lasers.
The invention provides a kind of vacuum cleavage and directly use the method for SiN passivated semiconductor laser cavity surface in a vacuum.It is characterized in that comprising following step:
Step 1. is carried out semiconductor laser chip attenuate and is cleaved into rectangle; It is pending to mark the cleavage line with scribing machine at the good chip of laser of cleavage.
Step 4. is closed chip pumps and is taken out the bar bar after passivation is finished, install with the special-purpose coating clamp bar bar that passivation is good, utilizes full-automatic coating machine at the bar bar front facet evaporation anti-reflection film that installs, at rear facet evaporation high-reflecting film.
In the such scheme, the described SiN thin-film material of step 3 as the vacuum cleavage after the passivating film material of passivated semiconductor laser in a vacuum.
Income effect of the present invention
The advantage that the present invention has is carried out cleavage and passivation for utilizing vacuum cleavage passivation coating machine noise spectra of semiconductor lasers, the chamber face of having avoided semiconductor laser to contact with air in the cleavage process and having caused the new cleavage to come out is polluted by impurity such as airborne oxygen and carbon, especially utilize SiN effectively to utilize the physics of SiN and the advantage of chemical characteristic as passivating film: 1. have the big energy gap of 4.15eV, it is right effectively to form
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The potential barrier of family's films on cavity surfaces of semiconductor lasers.2.SiN only be dissolved in hydrofluoric acid and strong acid and do not react with other soda acids and water.When 3.SiN film contacts with air, can be filled by oxygen atom seldom, and the effectively diffusion of tissue oxygen atom, the corrosion of the noise spectra of semiconductor lasers front that causes because of diffusion reduced.4.SiN light attenuation coefficient little, be 0.1-0.3db/cm at 0.63-1.6 μ m places, can reduce film to the absorption of light.By utilizing these physics of SiN and chemical characteristic can further improve life-span and the stability of semiconductor laser.
Description of drawings
Fig. 1 is according to the schematic diagram behind the intact semiconductor laser bar bar of example cleavage of the present invention and the intact passivating film of evaporation and the high anti-anti-reflection film.
The procedure chart of Fig. 2 for carrying out semiconductor laser cleavage and passivation according to example of the present invention.
Embodiment
1. about InGaAsP/GaAs/InGaAsP laser attenuated polishing to the 100-200 μ m that is 808nm with two inches big or small centre wavelengths.It is 30-40mm that the slice, thin piece that attenuated polishing is good cleavage in air becomes length, and wide is the rectangular shape of 10-15mm.The chip of laser that cleavage is good is put the cleavage line of growing every standardized 600 μ m of 1500 μ m in the scribing machine on the long limit of rectangular shape.
2. its step is as follows:
Step 1. adds the semiconductor laser chip of handling well that the anchor clamps that will have chip of laser are put on the special-purpose shelf, anchor clamps are put in the sample cavity 1 of vacuum cleavage passivation coating machine again with special-purpose anchor clamps.Close the chamber behind the door, opened vacuum pump, be evacuated down to ultravacuum greater than 10
-8Torr.
After step 2. has been taken out vacuum, utilize the motion arm 4 of cleavage machine that semiconductor laser chip is delivered in the conveyor chamber 3.
The bar bar that step 4. is good with cleavage utilizes the motion arm 7 of cleavage machine to deliver to carry out in the passivation chamber 6 passivation, at the SiN passivating film 3 of the preceding rear facet evaporation 5nm of bar bar.
Behind the good bar bar of step 5. passivation, utilize the motion arm of cleavage machine to carry out the anti-operation of 3,4 processes, the bar bar is put back in the sample cavity 1, close the vacuum pump valve, open sample cavity and take out the good bar bar of cleavage passivation.
This semiconductor laser cleavage passivating method that the present invention proposes, cleavage and with the laser of SiN passivation in the vacuum, because that avoids as much as possible contacts with air in cleavage and passivating process, reduced to greatest extent in cleavage and the passivating process by the possibility of contaminating impurity such as oxygen and carbon in the air, effectively reduced the surface state of films on cavity surfaces of semiconductor lasers, and utilize in SiN passivating film material good physics and chemical characteristic, improve the stability of vacuum cleavage passivating film, improved stability and the reliability of semiconductor laser thus.
Claims (3)
1. a high power semiconductor lasers chamber face cleavage passivating method is characterized in that comprise following step: step 1. is carried out semiconductor laser chip attenuate and is cleaved into rectangle; Marking the pending step 2. of cleavage line with scribing machine at the good chip of laser of cleavage is put into the semiconductor laser chip of handling well on the special-purpose anchor clamps, the anchor clamps that carry semiconductor laser chip are put on the shelf of vacuum cleavage coating machine and then are put in the vacuum cleavage coating machine step 3. by operating cleavage semiconductor laser chip in a vacuum, and the good semiconductor laser bar bar of cleavage in a vacuum evaporation SiN passivating film step 4. after passivation is finished, close vacuum pump and take out the bar bar, bar bar passivation is good with the coating clamp of special use installs, utilize full-automatic coating machine at the bar bar front facet evaporation anti-reflection film that installs, at rear facet evaporation high-reflecting film.
2. a kind of high power semiconductor lasers cleavage passivating method according to claim 1 is characterized in that, the described cleavage in a vacuum of step 3 and passivated semiconductor laser.
3. a kind of high power semiconductor lasers cleavage passivating method according to claim 1 is characterized in that, the described SiN thin-film material of step 3 as the vacuum cleavage after the passivating film material of passivated semiconductor laser in a vacuum.
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| CN2013102091250A CN103269013A (en) | 2013-05-30 | 2013-05-30 | High-power semiconductor laser unit cavosurface cleavage and passivation method |
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| CN2013102091250A CN103269013A (en) | 2013-05-30 | 2013-05-30 | High-power semiconductor laser unit cavosurface cleavage and passivation method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118117436A (en) * | 2024-04-30 | 2024-05-31 | 南京镭芯光电有限公司 | Ultrahigh vacuum dissociation passivation method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101394062A (en) * | 2008-07-04 | 2009-03-25 | 长春理工大学 | Chamber surface passivation method for semi-conductor laser |
| CN102570294A (en) * | 2012-01-12 | 2012-07-11 | 北京工业大学 | Nitride passivation method for cavity surfaces of vacuum-cleaved high-power semiconductor laser |
-
2013
- 2013-05-30 CN CN2013102091250A patent/CN103269013A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101394062A (en) * | 2008-07-04 | 2009-03-25 | 长春理工大学 | Chamber surface passivation method for semi-conductor laser |
| CN102570294A (en) * | 2012-01-12 | 2012-07-11 | 北京工业大学 | Nitride passivation method for cavity surfaces of vacuum-cleaved high-power semiconductor laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118117436A (en) * | 2024-04-30 | 2024-05-31 | 南京镭芯光电有限公司 | Ultrahigh vacuum dissociation passivation method |
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Application publication date: 20130828 |