CN106300010A - A kind of raising reliability of semiconductor laser method - Google Patents
A kind of raising reliability of semiconductor laser method Download PDFInfo
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- CN106300010A CN106300010A CN201510280995.6A CN201510280995A CN106300010A CN 106300010 A CN106300010 A CN 106300010A CN 201510280995 A CN201510280995 A CN 201510280995A CN 106300010 A CN106300010 A CN 106300010A
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Abstract
The invention belongs to Semiconductor Optic Electronics technical field, relate to a kind of raising reliability of semiconductor laser method, including: semiconductor laser cleavage bar 1, thickness is 2.5 nanometer gadoliniums 2, and thickness is the GGG 3 of 20 nanometers.By neat being stacked on coating clamp of semiconductor laser cleavage bar 1 good for cleavage, put in coater, extracting vacuum.When vacuum reaches fine vacuum, starting plated film, first plating thickness is 2.5 nanometer gadoliniums 2, then plates the GGG 3 that thickness is 20 nanometers, and this method film can be effectively reduced films on cavity surfaces of semiconductor lasers damage, improves the reliability of semiconductor laser.The present invention can be effectively improved the reliability of semiconductor laser.
Description
Technical field
The invention belongs to Semiconductor Optic Electronics technical field, relate to a kind of raising reliability of semiconductor laser method.
Background technology
High power semiconductor lasers is widely used in fields such as pumping source, fiber optic communication, Laser Processing and military affairs because it is lightweight, volume is little, power is high and is prone to the features such as modulation.Along with the improving constantly of output of semiconductor laser, and restricting semiconductor laser and being used directly to do Military Application, material welding and laser machine topmost factor is exactly reliability of semiconductor laser.
Affecting the main factor of reliability of semiconductor laser is exactly the damage of semiconductor laser exiting surface.The damage of semiconductor laser exiting surface includes semiconductor laser active area and blooming damage.After semiconductor laser active area refers to semiconductor laser chip cleavage, cleavage surface exists dangling bonds and unstable surface state, these dangling bonds and unstable surface state and can produce light absorption, accumulate heat, cause active area.Blooming damage is caused by dielectric breakdown.Dielectric breakdown can be caused by skin effect, and optical medium absorbs laser energy, making blooming temperature raise so that melting, causing the permanent damage of blooming.In order to improve reliability of semiconductor laser, it is necessary to suppression semiconductor laser active area and semiconductor laser optical membrane damage.
Summary of the invention
For the principal element affecting reliability of semiconductor laser, the present invention proposes a kind of raising reliability of semiconductor laser method, first plate, in semiconductor laser cleavage surface, the gadolinium that thickness is 2.5 nanometers, plate the GGG that thickness is 20 nanometers again, 2.5 nanometer gadolinium effects are dangling bonds present on compound cleavage surface and unstable surface state, form stable chemical bond, 20 nanometer GGGs are suppression skin effects, improve heat dispersion, reduce blooming heat, thus improve the reliability of semiconductor laser.
The present invention provides a kind of and improves reliability of semiconductor laser method, it is characterised in that including: semiconductor laser cleavage bar 1, thickness is 2.5 nanometer gadoliniums 2, and thickness is the GGG 3 of 20 nanometers.Specifically comprise the following steps that
Step 1: semiconductor laser chip is cleaved into laser strip 1.
Step 2: plating thickness before and after cleavage bar in cleavage surface is 2.5 nanometer gadoliniums 2.
Step 3: then to plate thickness in gadolinium cleavage bar cleavage surface be the GGG of 20 nanometers having plated.
In such scheme, plating thickness in step 2 in cleavage surface is 2.5 nanometer gadoliniums, it is therefore an objective to dangling bonds present on compound cleavage surface and unstable surface state, forms stable chemical bond.
In such scheme, step 3 is plated the GGG that thickness is 20 nanometers, it is therefore an objective to suppression skin effect, improve heat dispersion, reduce blooming heat.
Beneficial effect: the present invention is a kind of simple method improving reliability of semiconductor laser, and reproducible, efficiency is high.The gadolinium that thickness is 2.5 nanometers is plated in semiconductor laser cleavage surface, plate the GGG that thickness is 20 nanometers again, 2.5 nanometer gadolinium effects are dangling bonds present on compound cleavage surface and unstable surface state, form stable chemical bond, 20 nanometer GGGs are suppression skin effects, improve heat dispersion, reduce blooming heat, can greatly improve reliability of semiconductor laser.The inventive method is simple, and easy to operate, cost of manufacture is low, it is adaptable to substrate is the semiconductor laser of gallium arsenic.
Accompanying drawing explanation
Fig. 1 is a kind of raising reliability of semiconductor laser method schematic diagram that the present invention provides.Fig. 1 includes semiconductor laser cleavage bar 1, and thickness is 2.5 nanometer gadoliniums 2, and thickness is the GGG 3 of 20 nanometers.
Detailed description of the invention:
The present invention is further described with embodiment below in conjunction with the accompanying drawings, but the invention is not restricted to embodiment.
The most in atmosphere by the cleavage bar 1 of gallium arsyl 808 nm a length of 1000 μm of semiconductor laser chip cleavage coelosis, by 808 good for cleavage nm neat being stacked on coating clamp of semiconductor laser cleavage bar 1, put in coater, extracting vacuum.When vacuum reaches fine vacuum, starting plated film, first plating thickness is 2.5 nanometer gadoliniums 2, then plates the GGG 3 that thickness is 20 nanometers.
Claims (1)
1. one kind is improved reliability of semiconductor laser method, it is characterized in that including: semiconductor laser cleavage bar 1, gadolinium 2, GGG 3, specifically comprise the following steps that step (1), by neat being stacked on coating clamp of semiconductor laser cleavage bar 1 good for cleavage, put in coater, extracting vacuum；Step (2), when reaching condition of high vacuum degree, plates gadolinium 2, and thickness is between 2 nanometer-3 nanometers；Step (3), plates GGG 3, and thickness is between 15 nanometer-20 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510280995.6A CN106300010A (en) | 2015-05-28 | 2015-05-28 | A kind of raising reliability of semiconductor laser method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510280995.6A CN106300010A (en) | 2015-05-28 | 2015-05-28 | A kind of raising reliability of semiconductor laser method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106300010A true CN106300010A (en) | 2017-01-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201510280995.6A Pending CN106300010A (en) | 2015-05-28 | 2015-05-28 | A kind of raising reliability of semiconductor laser method |
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| CN (1) | CN106300010A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
| CN111211477A (en) * | 2018-11-21 | 2020-05-29 | 深圳市中光工业技术研究院 | Semiconductor laser and preparation method thereof |
-
2015
- 2015-05-28 CN CN201510280995.6A patent/CN106300010A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
| CN111211477A (en) * | 2018-11-21 | 2020-05-29 | 深圳市中光工业技术研究院 | Semiconductor laser and preparation method thereof |
| CN111211477B (en) * | 2018-11-21 | 2023-07-28 | 深圳市中光工业技术研究院 | Semiconductor laser and method for manufacturing the same |
| US12107383B2 (en) | 2018-11-21 | 2024-10-01 | Shenzhen Lighting Institute | Semiconductor laser and fabrication method therefor |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170104 |
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| WD01 | Invention patent application deemed withdrawn after publication |