CN110364582A - One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof - Google Patents

One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof Download PDF

Info

Publication number
CN110364582A
CN110364582A CN201910535044.7A CN201910535044A CN110364582A CN 110364582 A CN110364582 A CN 110364582A CN 201910535044 A CN201910535044 A CN 201910535044A CN 110364582 A CN110364582 A CN 110364582A
Authority
CN
China
Prior art keywords
algan
graphene
substrate
pillar
nano
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910535044.7A
Other languages
Chinese (zh)
Inventor
李国强
郑昱林
王文樑
粱敬晗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201910535044.7A priority Critical patent/CN110364582A/en
Publication of CN110364582A publication Critical patent/CN110364582A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
    • H01L31/03048—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP comprising a nitride compounds, e.g. InGaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses one kind based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof.The ultraviolet detector includes substrate, graphene template layer, AlGaN nano-pillar, Ni the first metal layer and Au second metal layer with AlGaN nanometers of intercolumniations formation Schottky contacts from the bottom to top, further includes the Si filled in AlGaN nano-pillar3N4Insulating layer, and Ni the first metal layer and Au second metal layer form interdigital electrode as electrode material.The forbidden bandwidth of AlGaN material can be continuously adjusted according to the difference of Al component from 3.4 eV to 6.2 eV, thus can effectively be detected to the light that wavelength is 200 nm to 365 nm, have blind characteristic of good day；Ultraviolet detector of the invention has very high sensitive detection to UVA-C ultraviolet light, can be applied to the fields such as ultraviolet missilc guidance, open fire detection and solar illumination detection.

Description

One kind based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and its Preparation method
Technical field
The present invention relates to the technical fields of ultraviolet detector, in particular to a kind of based on AlGaN nanometers in graphene template Base for post MSM type ultraviolet detector and preparation method thereof.
Background technique
Ultraviolet detection technology because have blind characteristic of good day, non-line-of-sight communication, low eavesdropping rate and without background signal it is dry The advantages that disturbing, in terms of be widely used.Militarily, be mainly used in it is ultraviolet communication, for missile guidance, The fields such as missile warning, ultra-violet analysis and biochemical analysis.On civilian, it is mainly used in environment measuring, biological medicine is analyzed, is smelly Oxygen detection, open fire detection and solar illumination detection etc..Currently, realizing the widely applied mainly Si base photoelectricity two of industrialization Pole pipe ultraviolet detector, but since the search coverage of Si includes visible light, it is just able to achieve after only having filled filter system to ultraviolet The detection of light, increases volume and cost.In addition, Si is very strong to the absorbability of ultraviolet light, capability of resistance to radiation is weak, which has limited The development of ultraviolet detector.
Third generation wide bandgap semiconductor materials (include GaN, AlN, InN and three, quaternary compound), prohibit because it has The characteristics such as bandwidth is big, electron transfer rate is fast, thermal stability is good and capability of resistance to radiation is strong make it be quite suitable for production frequency Height, power is big, integrated level is high and anti-radiation electronic device, in light emitting diode, ultraviolet detector and solar battery etc. It is used widely in many fields.AlGaN material has broad stopband, direct band gap, can be real by the component of adjusting alloy Existing forbidden bandwidth is continuously adjustable from 3.4 eV to 6.2 eV, and being equivalent to cutoff wavelength is 200 nm to 365 nm, has visible Light is blind and day blind characteristic, this characteristic enable it to also detect ultraviolet signal under the interference of visible light and daylight, without filter Photosystem and it is made into shallow junction, is the ideal material for preparing ultraviolet detector.Although AlGaN base ultraviolet detector achieves certain It breaks through, but is far from reaching the degree of business application, restrict the principal element of AlGaN base ultraviolet detector development are as follows: heterogeneous The GaN/AlGaN thin film dislocation density of extension is high, warpage is big and is easy cracking, so that device preparation is difficult.One-dimensional AlGaN receives Rice structure mutually can be good at the shortcomings that overcoming traditional AlGaN film.Specific manifestation are as follows: (1) the one-dimensional AlGaN of hetero-epitaxy receives The crystal quality of rice material is an advantage over film, because of the large specific surface area of one-dimensional nano structure, can effectively reduce and be penetrated into The dislocation on nanometer rods top helps to reduce defect, improves crystal quality；(2) one-dimensional AlGaN nanostructure is largely On increase the sidewall area of material, to increase photon escape/absorption angle, effectively raise light emitting/absorption.
CVD method is a kind of common method of one-dimensional AlGaN nano material synthesis.Compared to MOCVD, MBE, PLD, HVPE etc. Method, MBE method growth rate is very low, the growth of PLD method large scale is difficult, HVPE method control precision is low, and CVD method has growth rate The advantages such as higher, low in cost, easy to operate, are suitble to extensive industrialization.However, the 1-dimention nano material of CVD method preparation at present Material will be based on catalyst auxiliary VLS growth method or template selective area growth method.Wherein, 1) catalyst auxiliary VLS growth method needs Use metal nanoparticle as catalysis, during the growth process, the often orientation of nano-pillar is different, it is intended to distort, tilt and Branch；2) template selective area growth method is it is usually necessary to use a series of extremely complex and expensive technology, such as electron beam exposure and poly- Pyrophosphate ion beam mill etc., can just prepare the nano column array of ordered arrangement and vertical growth, lead to high cost and poor efficiency.How High efficiency, low cost, which is prepared, to be orientated, and the one-dimensional AlGaN nano column array of uniformity arrangement is current problem.
Summary of the invention
It is received in view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide one kind based on AlGaN in graphene template Meter Zhu Ji MSM type ultraviolet detector and preparation method thereof.The ultraviolet detector has the spy that dark current is small and optical responsivity is high Point.
The object of the invention is also to provide purple based on AlGaN nanometers of base for post MSM types in graphene template described in preparation The preparation method of external detector.The preparation method simple process, low energy consumption, time-saving and efficiency.
The purpose of the present invention is realized at least through one of following technical solution.
One kind based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template, including from the bottom to top substrate, Graphene template layer, AlGaN nano-pillar, Ni the first metal layer and Au second with AlGaN nanometers of intercolumniations formation Schottky contacts Metal layer further includes the Si for filling AlGaN nano-pillar3N4Insulating layer, and Ni the first metal layer and Au second metal layer are as electrode Material forms interdigital electrode.
Further, the substrate with a thickness of 420 ~ 430 μm.
Further, the substrate is sapphire, Si or La0.3Sr1.7AlTaO6Substrate.
Further, the number of plies of the graphene template layer is 1 ~ 3 layer, with a thickness of 3 ~ 5 nm.
Further, the AlGaN nanometers of column length is 300 ~ 500 nm, and diameter is 100 ~ 200 nm.
Further, the Ni the first metal layer and the thickness of Au second metal layer are respectively 40 ~ 50 nm and 100 ~ 150 nm。
Further, the length of the interdigital electrode be 280 ~ 340 μm, width be 10 ~ 15 μm, electrode spacing be 10 ~ 15 μm, logarithm is 12 ~ 20 pairs.
The above-mentioned preparation method based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template, including walk as follows It is rapid:
(1) after cleaning substrate removes surface residual pollutant and oxide, graphene layer is grown in substrate surface, forms lining It is spontaneous to can be used as next step AlGaN nano-pillar due to graphene layer surface existing defects hole for bottom/graphene-structured Long template layer；
(2) growth obtains AlGaN nano-pillar in substrate/graphene-structured, forms substrate/graphene/AlGaN nano-pillar knot Structure；
(3) Si is grown on substrate/graphene/AlGaN nanometers of rod structure3N4Insulating layer fills the sky between AlGaN nano-pillar Gap forms substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure；
(4) to substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure starts the cleaning processing, then carries out photoetching treatment Afterwards, Ni and Au two metal layers are successively deposited on the insulation layer structure surface using electron beam evaporation deposition system as electricity Pole is removed photoresist, and obtains the Ni/Au metal interdigital electrode with AlGaN nano-pillar layer Schottky contacts, formed substrate/graphene/ AlGaN nano-pillar/Si3N4Insulation layer structure/Ni/Au metal interdigitated electrode structure, and carry out thermal anneal process；
(5) by substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure/Ni/Au metal interdigitated electrode structure carries out electricity Pressure welding point, thinned, scribing and wire bonding are plated, then is packaged, the ultraviolet detector is obtained.
Further, in step (1), the cleaning are as follows: 8 ~ 10 min are cleaned by ultrasonic using the HF aqueous solution of 6 ~ 10wt%, The residual impurity object on surface is removed, then is successively cleaned by ultrasonic 8 ~ 10 min and 3 ~ 5 min respectively with acetone and dehydrated alcohol, The organic impurities on surface is removed, is then cleaned by ultrasonic 3 ~ 5 min using deionized water, the water on surface is finally blown away with nitrogen gun Vapour.
Further, in step (1), graphene layer, process conditions are grown using PECVD are as follows: using mechanical pump and divide Son pump is evacuated to quartzy overpressure and is maintained 1 ~ 2 × 10-4 Pa, for silicon to 950 ~ 1000 DEG C, the molecular pump that stops is right H is passed through in backward cavity2And CH4, flow is respectively 80 ~ 150 sccm and 20 ~ 30 sccm, and pressure is maintained 30 ~ 100 Pa, is sunk RF plasma power is maintained at 200 ~ 300 W during product, and deposition terminates back substrate and is cooled to room under Ar gas atmosphere Temperature, the graphene layer surface existing defects hole of deposition, therefore as the self-growing template layer of next step AlGaN nano-pillar.
Further, in step (2), the process conditions of PECVD growth AlGaN nano-pillar are as follows: using mechanical pump and Molecular pump is evacuated to quartzy overpressure and is maintained 1 ~ 2 × 10-4 Pa, substrate/graphene-structured are heated to 850 ~ 950 DEG C, The source Al and the source Ga using Al powder and Ga ball as AlGaN material, are heated to 1000 ~ 1100 DEG C for Al powder；Ga ball is heated to 850~950 ℃；Then then the molecular pump that stops is passed through N into cavity2And H2As carrier gas, flow is respectively 60 ~ 100 sccm With 20 ~ 30 sccm, it is passed through NH3As reaction gas, flow is 20 ~ 30 sccm, RF plasma power in growth course 150 ~ 250 W are maintained at, reaction room pressure, which is maintained to deposit under 50 ~ 100 Pa, forms AlGaN nano-pillar, after deposition Substrate is in N2It is cooled to room temperature under gas atmosphere.
Further, the molar fraction of the Al component of AlGaN is controlled by the different heating evaporation temperature of control source region It is adjustable from 0 ~ 1, realize AlxGa(1-x)N(0 < x < 1), forbidden bandwidth is continuously adjusted from 3.4 eV to 6.2 eV.
Further, in step (3), Si is grown by PECVD3N4Insulation fill stratum, process conditions are as follows: utilize mechanical pump And molecular pump is evacuated to quartzy overpressure and is maintained 1 ~ 2 × 10-4 Pa, substrate/graphene/AlGaN nanometers of rod structure heating To 450 ~ 550 DEG C, then the molecular pump that then stops is passed through SiH into cavity4And NH3, flow is respectively 20 ~ 30 sccm and 100 ~ 150 sccm, RF plasma power is maintained at 250 ~ 300 W in growth course, and reaction room pressure is maintained 40 ~ 90 Si is deposited under Pa3N4Insulation fill stratum.
Further, in step (4), the cleaning treatment are as follows: first successively it is cleaned by ultrasonic 8 respectively with acetone and alcohol ~ 10 min and 3 ~ 5 min, remove the organic impurities on surface, are then cleaned by ultrasonic 3 ~ 5 min using deionized water, remove surface Inorganic impurity, the steam on surface is finally blown away with nitrogen gun.
Further, in step (4), the photoetching treatment are as follows: coat tackifier HMDS first to enhance silicon wafer and photoresist Adhesion, recycle 40 ~ 60 s of sol evenning machine spin coating negative photoresist, through front baking, exposure, after dry, develop, post bake, and adopt Use O2Plasma carries out reactive ion etching and handles 2 ~ 4 min, cleaning, and last hot nitrogen dries 5 ~ 10 min.
Further, the front baking is to carry out 65 ~ 75 DEG C of 5 ~ 8 min of heat treatment in an oven.
Further, the exposure is by front baking treated sample and lithography mask version while to be placed on litho machine On, then 5 ~ 7 s of ultraviolet source irradiation.
Further, rear dry is to carry out 85 ~ 95 DEG C of 2 ~ 3 min of heat treatment in an oven.
Further, the development is by the rear tetrabutylammonium hydroxide for drying that treated sample is put into 6 ~ 8 wt% 60 ~ 100 s are dissolved in aqueous development liquid.
Further, the post bake is to carry out 55 ~ 75 DEG C of 6 ~ 8 min of heat treatment in an oven.
Further, the cleaning is to be cleaned by ultrasonic 3 ~ 5 min using deionized water, removes the inorganic impurity on surface, The steam on surface is finally blown away with nitrogen gun.
Further, in step (4), the electron beam evaporation plating electrode process are as follows: by the insulation of cleaned drying Layer structure is put into electron beam evaporation deposition system, and mechanical pump and molecular pump are evacuated to 5.0 ~ 6.0 × 10-4 After Pa, start to steam Metallized electrode, evaporation of metal rate control are 2.0 ~ 3.0/s, and sample disk rotating speed is 10 ~ 20 r/min.
Further, in step (4), described remove photoresist is to be ultrasonically treated 1 ~ 3 min after impregnating 20 ~ 25 min in acetone, To eliminate unwanted part, required interdigital electrode pattern is left.
Since the graphene surface of perfect lattice is to be saturated dangling bonds to be not easy adatom, and natural graphite alkene surface is deposited In the place of defect (nanoscale), there are dangling bonds, are growth one which provides a natural nanovoids template AlGaN nano column array is tieed up, so the seed layer for using two-dimensional graphene to grow as this one-dimensional nano-array structure epitaxial Template；Meanwhile graphene conductive is fabulous, improves the carrier transport of photoelectric device.In addition, MSM type ultraviolet detector is opposite In other kinds of ultraviolet detector such as PIN type, avalanche-type ultraviolet detector, because of simple, fast response time, light with structure Many advantages, such as responsiveness is high is more and more widely used.
Compared with prior art, it has the following advantages and beneficial effects:
(1) present invention utilizes the nucleating points of graphene template layer, and CVD method Van der Waals extension is directly used on graphene/substrate Grow AlGaN nano-pillar, overcome catalyst auxiliary VLS growth method and the shortcomings that template selective area growth method, have simple process, Time-saving and efficiency and the characteristics of low energy consumption, is conducive to large-scale production；
(2) it is of the invention based in graphene template in AlGaN nanometers of base for post MSM type ultraviolet detectors use AlGaN nanometers Column material is as active layer material, because the forbidden bandwidth of AlGaN material can be according to the difference of Al component from 3.4 eV to 6.2 EV is continuously adjustable, thus can effectively be detected to the light that wavelength is 200 nm to 365 nm, has blind characteristic of good day；
(3) of the invention based on 1-dimention nano column is utilized in AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template The huge specific surface area of material and quantum confinement, improve the density and transmission time of photo-generated carrier, obtain it is highly sensitive and Supper-fast photoresponse；
(4) it is of the invention can be realized based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template it is ultraviolet to UVA-C The highly sensitive detection of light, can be applied to fields, the economic benefits such as ultraviolet missilc guidance, open fire detection and solar illumination detection can It sees.
Detailed description of the invention
Fig. 1 is the structural profile illustration of ultraviolet detector of the invention；
Fig. 2 is the electrode structure schematic top plan view of ultraviolet detector of the invention；
Fig. 3 be embodiment 1 prepare Al group be divided into 0.02 based on Al in graphene template0.02Ga0.98N nanometers of base for post MSM types The electric current of ultraviolet detector is with applying bias change curve；
Fig. 4 be embodiment 2 prepare Al group be divided into 0.3 based on Al in graphene template0.3Ga0.7N nanometers of base for post MSM types are ultraviolet The electric current of detector is with applying bias change curve；
Fig. 5 be embodiment 3 prepare Al group be divided into 0.98 based on Al in graphene template0.98Ga0.02N nanometers of base for post MSM types The electric current of ultraviolet detector is with applying bias change curve.
Specific embodiment
Technical solution of the present invention is described in further detail below in conjunction with specific embodiments and drawings, but the present invention Embodiment and protection scope it is without being limited thereto.
In specific embodiment, the knot of the invention based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template Structure diagrammatic cross-section as shown in Figure 1, from the bottom to top, successively include substrate 1, graphene template layer 2, AlGaN nano-pillar 3, with AlGaN nanometers of intercolumniations form the Ni the first metal layer 5 and Au second metal layer 6 of Schottky contacts, further include AlGaN nanometers of filling The Si of column3N4Insulating layer 4, Ni the first metal layer 5 and Au second metal layer 6 form interdigital electrode as electrode material.
Wherein, substrate 1 with a thickness of 420 ~ 430 μm；The number of plies of graphene template layer 2 is 1 ~ 3 layer, with a thickness of 3 ~ 5 nm； The length of AlGaN nano-pillar 3 is 300 ~ 500 nm, and diameter is 100 ~ 200 nm；Ni the first metal layer and Au second metal layer fork Refer to that electrode is the metal layer interdigital electrode that Ni and Au are stacked gradually from the bottom to top, wherein the second metal of Ni the first metal layer 5 and Au The thickness of layer 6 is respectively 40 ~ 50 nm and 100 ~ 150 nm, and the length of metal interdigital electrode is 280 ~ 340 μm, and width is 10 ~ 15 μm, electrode spacing is 10 ~ 15 μm, and logarithm is 12 ~ 20 pairs.
Embodiment 1
A kind of preparation based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template that Al constituent content is 0.02 (nano-pillar Al0.02Ga0.98N), specifically includes the following steps:
(1) Si (111) substrate is cleaned, after removing surface residual pollutant and oxide, is placed in plasma-reinforced chemical In vapor deposition apparatus, graphene layer is grown in substrate surface, substrate/graphene-structured is formed, due to graphene layer surface Existing defects hole, therefore can be used as the self-growing template layer of next step AlGaN nano-pillar；
(2) it recycles PECVD directly to grow in substrate/graphene-structured and obtains AlGaN nano-pillar, form substrate/graphite Alkene/AlGaN nanometers of rod structure；
(3) PECVD is recycled directly to grow Si on substrate/graphene/AlGaN nanometers of rod structure3N4Insulating layer filling Gap between AlGaN nano-pillar forms substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure；
(4) to substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure starts the cleaning processing, then carries out photoetching treatment Afterwards, Ni and Au two metal layers are successively deposited on sample surfaces using electron beam evaporation deposition system as electrode, removes photoresist, obtains To the Ni/Au metal interdigital electrode with AlGaN layer Schottky contacts, substrate/graphene/AlGaN nano-pillar/Si is formed3N4Insulation Layer structure/Ni/Au metal interdigitated electrode structure, and be transferred in annealing furnace and carry out thermal anneal process；
(5) by substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure/Ni/Au metal interdigitated electrode structure carries out electricity Pressure welding point, thinned, scribing and wire bonding are plated, then is packaged, the ultraviolet detector is obtained.
Further, in step (1), the cleaning are as follows: 10 min, removal are cleaned by ultrasonic using the HF aqueous solution of 6 wt% The residual impurity object on surface, then successively it is cleaned by ultrasonic 8 min and 5 min respectively with acetone and dehydrated alcohol, remove surface Organic impurities is then cleaned by ultrasonic 3 min using deionized water, the steam on surface is finally blown away with nitrogen gun.
Further, in step (1), the process conditions of the PECVD growth graphene layer are as follows: utilize mechanical pump and molecule Pump is evacuated to quartzy overpressure and is maintained 1.0 × 10-4 Pa, silicon is to 950 DEG C, and the molecular pump that stops is then to cavity Inside it is passed through H2And CH4, flow is respectively 150 sccm and 30 sccm, and pressure is maintained 100 Pa, in deposition process radio frequency etc. from Daughter power is maintained at 200 W, and deposition terminates back substrate and is cooled to room temperature under Ar gas atmosphere, and the graphene layer surface of deposition is deposited In defect hole, therefore as the self-growing template layer of next step AlGaN nano-pillar；
Further, in step (2), the process conditions of the PECVD growth AlGaN nano-pillar are as follows: utilize mechanical pump and molecule Pump is evacuated to quartzy overpressure and is maintained 1 × 10-4 Pa, substrate/graphene-structured are heated to 950 DEG C, using Al powder and Ga source and Al source of the Ga ball as AlGaN material.Then then the molecular pump that stops is passed through N into cavity2And H2As carrier gas, stream Amount is respectively 60 sccm and 20 sccm, is passed through NH3As reaction gas, flow is 20 sccm, in growth course radio frequency etc. from Daughter power is maintained at 250 W, and reaction room pressure is maintained deposition under 50 Pa and forms AlGaN nano-pillar.Deposition terminates backsight Bottom is in N2It is cooled to room temperature under gas atmosphere.
Further, the heating temperature of the Al powder and Ga ball source region is respectively 1000 DEG C and 950 DEG C, realizes Al Group is divided into 0.02 Al0.02Ga0.98N nano-pillar, forbidden bandwidth are 3.46 eV.
Further, in step (3), the PECVD grows Si3N4Insulation fill stratum process conditions are as follows: using mechanical pump and Molecular pump is evacuated to quartzy overpressure and is maintained 1.0 × 10-4 Pa, substrate/graphene/AlGaN nanometers of rod structure are heated to 550 DEG C, then the molecular pump that then stops is passed through SiH into cavity4And NH3, flow is respectively 20 sccm and 100 sccm, life RF plasma power is maintained at 250 W in growth process, and reaction room pressure, which is maintained under 40 Pa, deposits Si3N4Insulation filling Layer.
Further, in step (4), the cleaning treatment are as follows: be first successively cleaned by ultrasonic 10 respectively with acetone and alcohol Min and 5 min, removes the organic impurities on surface, is then cleaned by ultrasonic 3 min using deionized water, removes the inorganic miscellaneous of surface Matter finally blows away the steam on surface with nitrogen gun.
Further, in step (4), the photoetching treatment are as follows: coat tackifier HMDS first to enhance silicon wafer and photoresist Adhesion, recycle 40 s of sol evenning machine spin coating negative photoresist, through front baking, exposure, after dry, development, post bake, and using O2 Plasma carries out reactive ion etching and handles 4 min, cleaning, and last hot nitrogen dries 5 min.
Further, the front baking is to carry out 75 DEG C of 5 min of heat treatment in an oven.
Further, the exposure is by front baking treated sample and lithography mask version while to be placed on litho machine On, then 5 s of ultraviolet source irradiation.
Further, rear dry is to carry out 85 DEG C of 3 min of heat treatment in an oven.
Further, the development is by the rear tetrabutylammonium hydroxide water for drying that treated sample is put into 6 wt% 60 s are dissolved in solution development liquid.
Further, the post bake is to carry out 75 DEG C of 6 min of heat treatment in an oven.
Further, the cleaning is to be cleaned by ultrasonic 5 min using deionized water, removes the inorganic impurity on surface, most The steam on surface is blown away with nitrogen gun afterwards.
Further, in step (4), the electron beam evaporation plating electrode process are as follows: be put into the sample of cleaned drying In e-book evaporation coating system, mechanical pump and molecular pump are evacuated to 6.0 × 10-4 After Pa, start evaporation metal electrode, gold Belonging to evaporation rate control is 2.0/s, and sample disk rotating speed is 20 r/min
Further, in step (4), described remove photoresist is to be ultrasonically treated 3 min after impregnating 20 min in acetone, to eliminate Unwanted part leaves required interdigital electrode pattern.
Prepared Al group be divided into 0.02 based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template Structural profile illustration is referring to Fig. 1, wherein Si (111) substrate 1 with a thickness of 420 μm；The number of plies of graphene template layer 2 is 1 Layer, with a thickness of 3 nm；The length of AlGaN nano-pillar 3 is 500 nm, and diameter is 100 nm；The second gold medal of Ni the first metal layer and Au Belonging to layer interdigital electrode is the metal layer interdigital electrode that stacks gradually from the bottom to top of Ni and Au, wherein Ni the first metal layer 5 and Au the The thickness of two metal layers 6 is respectively 50 nm and 150 nm, and the length of metal interdigital electrode is 340 μm, and width is 15 μm, electricity For interpolar away from being 10 μm, logarithm is 14 pairs, overlooks face schematic diagram and sees Fig. 2.
Prepared Al group be divided into 0.02 based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template The curve graph that electric current changes with applying bias is as shown in figure 3, electric current increases with the increase of applying bias, and image is just Negative pressure region has good symmetry, suggests the formation of good Schottky contacts.Under 1 V bias, dark current is only 3.5 NA illustrates that the photodetector of preparation has good dark current characteristic, and under the irradiation of 365 nm light, electric current significantly increases (~ μ A), show that there is very sensitive Effect on Detecting to UVA ultraviolet light.
Embodiment 2
A kind of Al group is divided into the 0.3 preparation (nanometer based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template Column is Al0.3Ga0.7N), specifically includes the following steps:
(1) Sapphire Substrate is cleaned, after removing surface residual pollutant and oxide, is placed in plasma-reinforced chemical gas Mutually in deposition (PECVD) equipment, graphene layer is grown in substrate surface, substrate/graphene-structured is formed, due to graphene layer Surface existing defects hole, therefore can be used as the self-growing template layer of next step AlGaN nano-pillar；
(2) it recycles PECVD directly to grow in substrate/graphene-structured and obtains AlGaN nano-pillar, form substrate/graphite Alkene/AlGaN nanometers of rod structure；
(3) PECVD is recycled directly to grow Si on substrate/graphene/AlGaN nanometers of rod structure3N4Insulating layer filling Gap between AlGaN nano-pillar forms substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure；
(4) to substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure starts the cleaning processing, then carries out photoetching treatment Afterwards, Ni and Au two metal layers are successively deposited on sample surfaces using electron beam evaporation deposition system as electrode, removes photoresist, obtains To the Ni/Au metal interdigital electrode with AlGaN layer Schottky contacts, substrate/graphene/AlGaN nano-pillar/Si is formed3N4Insulation Layer structure/Ni/Au metal interdigitated electrode structure, and be transferred in annealing furnace and carry out thermal anneal process；
(5) by substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure/Ni/Au metal interdigitated electrode structure carries out electricity Pressure welding point, thinned, scribing and wire bonding are plated, then is packaged, the ultraviolet detector is obtained.
Further, in step (1), the cleaning are as follows: 9 min, removal are cleaned by ultrasonic using the HF aqueous solution of 8 wt% The residual impurity object on surface, then successively it is cleaned by ultrasonic 10 min and 4 min respectively with acetone and dehydrated alcohol, remove surface Organic impurities, then using deionized water be cleaned by ultrasonic 5 min, the steam on surface is finally blown away with nitrogen gun.
Further, in step (1), the process conditions of the PECVD growth graphene layer are as follows: utilize mechanical pump and molecule Pump is evacuated to quartzy overpressure and is maintained 2 × 10-4 Pa, silicon is to 1000 DEG C, and the molecular pump that stops is then to cavity Inside it is passed through H2And CH4, flow is respectively 120 sccm and 25 sccm, and pressure is maintained 70 Pa, radio frequency plasma in deposition process Body power is maintained at 300 W, and deposition terminates back substrate and is cooled to room temperature under Ar gas atmosphere, and the graphene layer surface of deposition exists Defect hole, therefore as the self-growing template layer of next step AlGaN nano-pillar；
Further, in step (2), the process conditions of the PECVD growth AlGaN nano-pillar are as follows: utilize mechanical pump and molecule Pump is evacuated to quartzy overpressure and is maintained 1.5 × 10-4 Pa, substrate/graphene-structured are heated to 900 DEG C, using Al powder The source Al and the source Ga with Ga ball as AlGaN material.Then then the molecular pump that stops is passed through N into cavity2And H2As carrier gas, Flow is respectively 80 sccm and 25 sccm, is passed through NH3As reaction gas, flow is 22 sccm, radio frequency etc. in growth course Gas ions power is maintained at 150 W, and reaction room pressure is maintained deposition under 75 Pa and forms AlGaN nano-pillar.After deposition Substrate is in N2It is cooled to room temperature under gas atmosphere.
Further, the heating temperature of the Al powder and Ga ball source region is respectively 1050 DEG C and 930 DEG C, is realized The Al group of AlGaN is divided into 0.3, and forbidden bandwidth is 4.20 eV or so.
Further, in step (3), the PECVD grows Si3N4Insulation fill stratum process conditions are as follows: using mechanical pump and Molecular pump is evacuated to quartzy overpressure and is maintained 2 × 10-4 Pa, substrate/graphene/AlGaN nanometers of rod structure are heated to 500 DEG C, then the molecular pump that then stops is passed through SiH into cavity4And NH3, flow is respectively 30 sccm and 150 sccm, life RF plasma power is maintained at 280 W in growth process, and reaction room pressure, which is maintained under 90 Pa, deposits Si3N4Insulation filling Layer.
Further, in step (4), the cleaning treatment are as follows: be first successively cleaned by ultrasonic 8 respectively with acetone and alcohol Min and 4 min, removes the organic impurities on surface, is then cleaned by ultrasonic 5 min using deionized water, removes the inorganic miscellaneous of surface Matter finally blows away the steam on surface with nitrogen gun.
Further, in step (4), the photoetching treatment are as follows: coat tackifier HMDS first to enhance silicon wafer and photoresist Adhesion, recycle 50 s of sol evenning machine spin coating negative photoresist, through front baking, exposure, after dry, development, post bake, and using O2 Plasma carries out reactive ion etching and handles 3 min, cleaning, and last hot nitrogen dries 10 min.
Further, the front baking is to carry out 70 DEG C of 8 min of heat treatment in an oven.
Further, the exposure is by front baking treated sample and lithography mask version while to be placed on litho machine On, then 7 s of ultraviolet source irradiation.
Further, rear dry is to carry out 95 DEG C of 2.5 min of heat treatment in an oven.
Further, the development is by the rear tetrabutylammonium hydroxide water for drying that treated sample is put into 8 wt% 80 s are dissolved in solution development liquid.
Further, the post bake is to carry out 55 DEG C of 8 min of heat treatment in an oven.
Further, the cleaning is to be cleaned by ultrasonic 3 min using deionized water, removes the inorganic impurity on surface, most The steam on surface is blown away with nitrogen gun afterwards.
Further, in step (4), the electron beam evaporation plating electrode process are as follows: be put into the sample of cleaned drying In e-book evaporation coating system, mechanical pump and molecular pump are evacuated to 5.5 × 10-4 After Pa, start evaporation metal electrode, gold Belonging to evaporation rate control is 3.0/s, and sample disk rotating speed is 10 r/min
Further, in step (4), described remove photoresist is to be ultrasonically treated 2 min after impregnating 25 min in acetone, to eliminate Unwanted part leaves required interdigital electrode pattern.
Prepared Al group is divided into 0.3 knot based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template Structure diagrammatic cross-section is referring to Fig. 1, wherein Si (111) substrate 1 with a thickness of 430 μm；The number of plies of graphene template layer 2 is 3 layers, With a thickness of 5 nm；The length of AlGaN nano-pillar 3 is 300 nm, and diameter is 200 nm；Ni the first metal layer and Au second metal layer Interdigital electrode is the metal layer interdigital electrode that Ni and Au are stacked gradually from the bottom to top, wherein the second gold medal of Ni the first metal layer 5 and Au The thickness for belonging to layer 6 is respectively 40 nm and 100 nm, and the length of metal interdigital electrode is 280 μm, and width is 10 μm, between electrode Away from being 15 μm, logarithm is 12 pairs.
Prepared Al group is divided into 0.3 electricity based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template The curve graph changed with applying bias is flowed as shown in figure 4, electric current increases with the increase of applying bias, and image is positive and negative Intermediate pressure section has good symmetry, suggests the formation of good Schottky contacts.Under 1 V bias, dark current is only 8.8 nA, Illustrate that the photodetector of preparation has good dark current characteristic, under the irradiation of 295 nm light, electric current significantly increases (~ μ A), Show that there is very sensitive Effect on Detecting to UVB ultraviolet light.
Embodiment 3
A kind of Al group is divided into the 0.98 preparation (nanometer based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template Column is Al0.98Ga0.02N), specifically includes the following steps:
(1) to La0.3Sr1.7AlTaO6Substrate is cleaned, and after removing surface residual pollutant and oxide, is placed in plasma increasing Extensive chemical is vapor-deposited in (PECVD) equipment, grows graphene layer in substrate surface, forms substrate/graphene-structured, due to Graphene layer surface existing defects hole, therefore can be used as the self-growing template layer of next step AlGaN nano-pillar；
(2) it recycles PECVD directly to grow in substrate/graphene-structured and obtains AlGaN nano-pillar, form substrate/graphite Alkene/AlGaN nanometers of rod structure；
(3) PECVD is recycled directly to grow Si on substrate/graphene/AlGaN nanometers of rod structure3N4Insulating layer filling Gap between AlGaN nano-pillar forms substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure；
(4) to substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure starts the cleaning processing, then carries out photoetching treatment Afterwards, Ni and Au two metal layers are successively deposited on sample surfaces using electron beam evaporation deposition system as electrode, removes photoresist, obtains To the Ni/Au metal interdigital electrode with AlGaN layer Schottky contacts, substrate/graphene/AlGaN nano-pillar/Si is formed3N4Insulation Layer structure/Ni/Au metal interdigitated electrode structure, and be transferred in annealing furnace and carry out thermal anneal process；
(5) by substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure/Ni/Au metal interdigitated electrode structure carries out electricity Pressure welding point, thinned, scribing and wire bonding are plated, then is packaged, the ultraviolet detector is obtained.
Further, in step (1), the cleaning are as follows: 8 min, removal are cleaned by ultrasonic using the HF aqueous solution of 10 wt% The residual impurity object on surface, then successively it is cleaned by ultrasonic 9 min and 3 min respectively with acetone and dehydrated alcohol, remove surface Organic impurities is then cleaned by ultrasonic 4 min using deionized water, the steam on surface is finally blown away with nitrogen gun.
Further, in step (1), the process conditions of the PECVD growth graphene layer are as follows: utilize mechanical pump and molecule Pump is evacuated to quartzy overpressure and is maintained 1.5 × 10-4 Pa, silicon is to 980 DEG C, and the molecular pump that stops is then to cavity Inside it is passed through H2And CH4, flow is respectively 80 sccm and 20 sccm, and pressure is maintained 30 Pa, radio frequency plasma in deposition process Body power is maintained at 250 W, and deposition terminates back substrate and is cooled to room temperature under Ar gas atmosphere, and the graphene layer surface of deposition exists Defect hole, therefore as the self-growing template layer of next step AlGaN nano-pillar；
Further, in step (2), the process conditions of the PECVD growth AlGaN nano-pillar are as follows: utilize mechanical pump and molecule Pump is evacuated to quartzy overpressure and is maintained 2 × 10-4 Pa, substrate/graphene-structured are heated to 850 DEG C, using Al powder and Al source and Ga source of the Ga ball as AlGaN material.Then then the molecular pump that stops is passed through N into cavity2And H2As carrier gas, stream Amount is respectively 100 sccm and 30 sccm, is passed through NH3As reaction gas, flow is 30 sccm, radio frequency etc. in growth course Gas ions power is maintained at 200 W, and reaction room pressure is maintained deposition under 100 Pa and forms AlGaN nano-pillar.Deposition terminates Back substrate is in N2It is cooled to room temperature under gas atmosphere.
Further, the heating temperature of the Al powder and Ga ball source region is respectively 1100 DEG C and 850 DEG C, is realized The Al group of AlGaN nano-pillar is divided into 0.98, Al0.98Ga0.02N forbidden bandwidth is 6.14 eV.
Further, in step (3), the PECVD grows Si3N4Insulation fill stratum process conditions are as follows: using mechanical pump and Molecular pump is evacuated to quartzy overpressure and is maintained 1.5 × 10-4 Pa, substrate/graphene/AlGaN nanometers of rod structure are heated to 450 DEG C, then the molecular pump that then stops is passed through SiH into cavity4And NH3, flow is respectively 25 sccm and 130 sccm, life RF plasma power is maintained at 300 W in growth process, and reaction room pressure, which is maintained under 80 Pa, deposits Si3N4Insulation filling Layer.
Further, in step (4), the cleaning treatment are as follows: be first successively cleaned by ultrasonic 9 respectively with acetone and alcohol Min and 3 min, removes the organic impurities on surface, is then cleaned by ultrasonic 4 min using deionized water, removes the inorganic miscellaneous of surface Matter finally blows away the steam on surface with nitrogen gun.
Further, in step (4), the photoetching treatment are as follows: coat tackifier HMDS first to enhance silicon wafer and photoresist Adhesion, recycle 60 s of sol evenning machine spin coating negative photoresist, through front baking, exposure, after dry, development, post bake, and using O2 Plasma carries out reactive ion etching and handles 2 min, cleaning, and last hot nitrogen dries 8 min.
Further, the front baking is to carry out 65 DEG C of 6 min of heat treatment in an oven.
Further, the exposure is by front baking treated sample and lithography mask version while to be placed on litho machine On, then 6.5 s of ultraviolet source irradiation.
Further, rear dry is to carry out 90 DEG C of 2 min of heat treatment in an oven.
Further, the development is by the rear tetrabutylammonium hydroxide water for drying that treated sample is put into 7 wt% 100 s are dissolved in solution development liquid.
Further, the post bake is to carry out 65 DEG C of 7 min of heat treatment in an oven.
Further, the cleaning is to be cleaned by ultrasonic 4 min using deionized water, removes the inorganic impurity on surface, most The steam on surface is blown away with nitrogen gun afterwards.
Further, in step (4), the electron beam evaporation plating electrode process are as follows: be put into the sample of cleaned drying In e-book evaporation coating system, mechanical pump and molecular pump are evacuated to 5.0 × 10-4 After Pa, start evaporation metal electrode, gold Belonging to evaporation rate control is 2.5/s, and sample disk rotating speed is 12 r/min
Further, in step (4), described remove photoresist is to be ultrasonically treated 1 min after impregnating 22 min in acetone, to eliminate Unwanted part leaves required interdigital electrode pattern.
Prepared Al group be divided into 0.98 based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template The curve graph that electric current changes with applying bias is as shown in figure 5, electric current increases with the increase of applying bias, and image is just Negative pressure region has good symmetry, suggests the formation of good Schottky contacts.Under 1 V bias, dark current is only 16.4 NA illustrates that the photodetector of preparation has good dark current characteristic, and under the irradiation of 200 nm light, electric current significantly increases (~ μ A), show that there is very sensitive Effect on Detecting to UVC ultraviolet light.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by the embodiment Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention, It should be equivalent substitute mode, be included within the scope of the present invention.

Claims (10)

1. one kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template, which is characterized in that including by down toward On substrate (1), graphene template layer (2), AlGaN nano-pillar (3), the Ni for forming with AlGaN nano-pillar Schottky contacts One metal layer (5) and Au second metal layer (6) further include the Si filled in AlGaN nano-pillar3N4Insulating layer (4), and Ni first Metal layer (5) and Au second metal layer (6) are as electrode material composition interdigital electrode.
2. according to claim 1 based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template, feature It is, the substrate (1) is sapphire, Si or La0.3Sr1.7AlTaO6Substrate, and substrate (1) with a thickness of 420 ~ 430 μm； The number of plies of the graphene template layer (2) is 1 ~ 3 layer, with a thickness of 3 ~ 5 nm；AlGaN nano-pillar (3) length is 300 ~ 500 Nm, diameter are 100 ~ 200 nm；The Ni the first metal layer (5) with a thickness of 40 ~ 50 nm, the thickness of Au second metal layer (6) For 100 ~ 150 nm；The length of the interdigital electrode is 280 ~ 340 μm, and width is 10 ~ 15 μm, and electrode spacing is 10 ~ 15 μ M, logarithm are 12 ~ 20 pairs.
3. the described in any item systems based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template of claim 1 ~ 2 Preparation Method, which comprises the steps of:
(1) it is grown graphene template layer (2) after cleaning substrate on substrate (1) surface, forms substrate/graphene-structured；
(2) growth obtains AlGaN nano-pillar (3) in substrate/graphene-structured described in step (1), forms substrate/graphite Alkene/AlGaN nanometers of rod structure；
(3) Si is grown on the substrate described in step (2)/graphene/AlGaN nanometers of rod structure3N4Insulating layer (4) fills AlGaN Gap between nano-pillar (3) forms substrate/graphene/AlGaN nano-pillar/Si3N4Insulation layer structure；
(4) to substrate/graphene described in step (3)/AlGaN nano-pillar/Si3N4Insulation layer structure starts the cleaning processing, then into After row photoetching treatment, two layers of gold medal of Ni and Au is successively deposited on the insulation layer structure surface using electron beam evaporation deposition system Belong to layer as electrode, remove photoresist, obtain the Ni/Au metal interdigital electrode with AlGaN nano-pillar Schottky contacts, forms substrate/stone Black alkene/AlGaN nano-pillar/Si3N4Insulation layer structure/Ni/Au metal interdigitated electrode structure, and carry out thermal anneal process；
(5) by substrate/graphene described in step (4)/AlGaN nano-pillar/Si3N4Insulation layer structure/interdigital the electricity of Ni/Au metal Pole structure carries out plating pressure welding point, thinned, scribing and wire bonding, then is packaged, and obtains the MSM type ultraviolet detection Device.
4. preparation method according to claim 3, which is characterized in that in the step (1), the cleaning are as follows: using 6 ~ The HF aqueous solution of 10wt% is cleaned by ultrasonic 8 ~ 10 min, removes the residual impurity object on surface, then successively with acetone ultrasonic cleaning 8 ~ 10 min and dehydrated alcohol are cleaned by ultrasonic 3 ~ 5 min, remove the organic impurities on surface, are then cleaned by ultrasonic using deionized water 3 ~ 5 min finally blow away the steam on surface with nitrogen gun.
5. preparation method according to claim 3, which is characterized in that in step (1), graphene layer is grown using PECVD, And process conditions are as follows: be evacuated to quartzy overpressure using mechanical pump and molecular pump and be maintained 1 ~ 2 × 10-4 Pa, silicon To 950 ~ 1000 DEG C, then the molecular pump that stops is passed through H into cavity2And CH4, H2Flow is 80 ~ 150 sccm, CH4Flow is 20 ~ 30 sccm, pressure are maintained 30 ~ 100 Pa, and RF plasma power is maintained at 200 ~ 300 W in deposition process, sink Product terminates back substrate and is cooled to room temperature under Ar gas atmosphere.
6. preparation method according to claim 3, which is characterized in that in the step (2), grow AlGaN using PECVD Nano-pillar, and process conditions are as follows: be evacuated to quartzy overpressure using mechanical pump and molecular pump and be maintained 1 ~ 2 × 10-4 Pa, Substrate/graphene-structured is heated to 850 ~ 950 DEG C, the source Al and the source Ga using Al powder and Ga ball as AlGaN material, by Al Powder is heated to 1000 ~ 1100 DEG C；Ga ball is heated to 850 ~ 950 DEG C；Then the molecular pump that stops is passed through N into cavity2And H2Make For carrier gas, flow is respectively 60 ~ 100 sccm and 20 ~ 30 sccm, is passed through NH3As reaction gas, flow is 20 ~ 30 Sccm, RF plasma power is maintained at 150 ~ 250 W in growth course, and reaction room pressure is maintained under 50 ~ 100 Pa Deposition forms AlGaN nano-pillar, and deposition terminates back substrate in N2It is cooled to room temperature under gas atmosphere.
7. preparation method according to claim 3, which is characterized in that in the step (3), grow Si using PECVD3N4 Insulation fill stratum, and process conditions are as follows: be evacuated to quartzy overpressure using mechanical pump and molecular pump and be maintained 1 ~ 2 × 10-4 Pa, substrate/graphene/AlGaN nanometers of rod structure are heated to 450 ~ 550 DEG C, then the molecular pump that then stops is passed through into cavity SiH4And NH3, SiH4Flow is 20 ~ 30 sccm, NH3Flow is 100 ~ 150 sccm, radio frequency plasma function in growth course Rate is maintained at 250 ~ 300 W, and reaction room pressure, which is maintained under 40 ~ 90 Pa, deposits Si3N4Insulation fill stratum.
8. preparation method according to claim 3, which is characterized in that in the step (4), cleaning treatment are as follows: first successively Be cleaned by ultrasonic 8 ~ 10 min and alcohol with acetone and be cleaned by ultrasonic 3 ~ 5 min, remove the organic impurities on surface, then using go from Sub- water is cleaned by ultrasonic 3 ~ 5 min, removes the inorganic impurity on surface, the steam on surface is finally blown away with nitrogen gun.
9. preparation method according to claim 3, which is characterized in that in the step (4), photoetching treatment are as follows: first coat Tackifier HMDS, recycle 40 ~ 60 s of sol evenning machine spin coating negative photoresist, through front baking, exposure, after dry, develop and post bake, and Using O2Plasma carries out reactive ion etching and handles 2 ~ 4 min, cleaning, and last hot nitrogen dries 5 ~ 10 min；
The front baking is to carry out 65 ~ 75 DEG C of 5 ~ 8 min of heat treatment in an oven；
The exposure is to be placed on front baking treated sample and lithography mask version on litho machine simultaneously, then ultraviolet source photograph Penetrate 5 ~ 7 s；
Dry after described is to carry out 85 ~ 95 DEG C of 2 ~ 3 min of heat treatment in an oven；
The development be by it is rear dry that treated sample be put into it is molten in the tetrabutylammonium hydroxide aqueous solution developer solution of 6 ~ 8 wt% Solve 60 ~ 100 s；
The post bake is to carry out 55 ~ 75 DEG C of 6 ~ 8 min of heat treatment in an oven；
The cleaning is to be cleaned by ultrasonic 3 ~ 5 min using deionized water, removes the inorganic impurity on surface, is finally blown away with nitrogen gun The steam on surface.
10. preparation method according to claim 3, which is characterized in that in the step (4), electron beam evaporation plated electrode Technique are as follows: the insulation layer structure of cleaned drying is put into electron beam evaporation deposition system, mechanical pump and molecule pumping Vacuum is to 5.0 ~ 6.0 × 10-4 After Pa, start evaporation metal electrode, evaporation of metal rate control is 2.0 ~ 3.0/s, sample disc Revolving speed is 10 ~ 20 r/min；Remove photoresist is to be ultrasonically treated 1 ~ 3 min after impregnating 20 ~ 25 min in acetone.
CN201910535044.7A 2019-06-20 2019-06-20 One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof Pending CN110364582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910535044.7A CN110364582A (en) 2019-06-20 2019-06-20 One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910535044.7A CN110364582A (en) 2019-06-20 2019-06-20 One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof

Publications (1)

Publication Number Publication Date
CN110364582A true CN110364582A (en) 2019-10-22

Family

ID=68216400

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910535044.7A Pending CN110364582A (en) 2019-06-20 2019-06-20 One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof

Country Status (1)

Country Link
CN (1) CN110364582A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111312851A (en) * 2019-11-19 2020-06-19 华南理工大学 Preparation method of AlN nanowire solar blind area detector
CN111326590A (en) * 2020-02-19 2020-06-23 珠海格力电器股份有限公司 Semiconductor device and method for manufacturing the same
WO2021104528A1 (en) * 2019-11-29 2021-06-03 中国科学技术大学 Solar-blind ultraviolet photoelectrochemical light detector and product thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120319083A1 (en) * 2009-12-22 2012-12-20 Dongguk University Industry-Academic Cooperation F Nanorod semiconductor device having a contact structure, and method for manufacturing same
CN106711241A (en) * 2016-12-21 2017-05-24 西安交通大学 Graphene transparent electrode diamond-based ultraviolet detector and preparation method thereof
CN108156828A (en) * 2015-07-31 2018-06-12 科莱约纳诺公司 For growing the method for nano wire or nanometer pyramid on graphite substrate
CN108292694A (en) * 2015-07-13 2018-07-17 科莱约纳诺公司 The light emitting diode and photodetector of nano wire/nanometer cone-shaped
CN108735826A (en) * 2018-05-30 2018-11-02 陈谦 Fiberglass-based flexible gallium oxide nano-array solar blind ultraviolet detector of one kind and preparation method thereof
CN210092100U (en) * 2019-06-20 2020-02-18 华南理工大学 Based on AlGaN nano-column base MSM type ultraviolet detector on graphite alkene template

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120319083A1 (en) * 2009-12-22 2012-12-20 Dongguk University Industry-Academic Cooperation F Nanorod semiconductor device having a contact structure, and method for manufacturing same
CN108292694A (en) * 2015-07-13 2018-07-17 科莱约纳诺公司 The light emitting diode and photodetector of nano wire/nanometer cone-shaped
CN108156828A (en) * 2015-07-31 2018-06-12 科莱约纳诺公司 For growing the method for nano wire or nanometer pyramid on graphite substrate
CN106711241A (en) * 2016-12-21 2017-05-24 西安交通大学 Graphene transparent electrode diamond-based ultraviolet detector and preparation method thereof
CN108735826A (en) * 2018-05-30 2018-11-02 陈谦 Fiberglass-based flexible gallium oxide nano-array solar blind ultraviolet detector of one kind and preparation method thereof
CN210092100U (en) * 2019-06-20 2020-02-18 华南理工大学 Based on AlGaN nano-column base MSM type ultraviolet detector on graphite alkene template

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
陈飞: "《AlN基Ⅲ族氮化物半导体纳米材料的制备与性能研究》", 《中国博士学位论文全文数据库 (工程科技Ⅰ辑)》, no. 04, 15 April 2016 (2016-04-15), pages 142 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111312851A (en) * 2019-11-19 2020-06-19 华南理工大学 Preparation method of AlN nanowire solar blind area detector
WO2021104528A1 (en) * 2019-11-29 2021-06-03 中国科学技术大学 Solar-blind ultraviolet photoelectrochemical light detector and product thereof
CN111326590A (en) * 2020-02-19 2020-06-23 珠海格力电器股份有限公司 Semiconductor device and method for manufacturing the same

Similar Documents

Publication Publication Date Title
CN110364582A (en) One kind is based on AlGaN nanometers of base for post MSM type ultraviolet detectors in graphene template and preparation method thereof
CN110265504B (en) Ultraviolet photoelectric detector and preparation method thereof
CN108231924A (en) It is grown in non polarity A lGaN base MSM type ultraviolet detectors in r surface sapphire substrates and preparation method thereof
CN107881472A (en) A kind of CsPbI3The preparation method of film
CN107195724B (en) A method of AlGaN Schottky solar blind ultraviolet detector being prepared on GaN self-supported substrate using Graphene electrodes
CN103227230B (en) A kind of lateral growth ZnMgO nanowire solar-blind region ultraviolet detector and preparation method thereof
CN108400183A (en) AlGaN Base Metals-semiconductor-metal type ultraviolet detector and preparation method thereof on a kind of Si substrates
CN109698250B (en) Grid-regulated AlGaN-based metal-semiconductor-metal ultraviolet detector and preparation method thereof
CN110246913A (en) A kind of InGaN nano column array base GSG type tunable optical electric explorer and preparation method thereof
RU2685032C1 (en) Photosensitive device and method of its manufacture
CN1874009A (en) Method for preparing detector in ultraviolet light
CN110112233A (en) Based on silver nanowires-graphene/gallium oxide nano-pillar photodetection structure, device and preparation method
CN111564509B (en) Full-oxide flexible photoelectric detector and preparation method and application thereof
CN211295123U (en) GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column
CN210092100U (en) Based on AlGaN nano-column base MSM type ultraviolet detector on graphite alkene template
CN115295676B (en) High photoresponse Te/MoS 2 Heterojunction optical detector and preparation method
CN111312851A (en) Preparation method of AlN nanowire solar blind area detector
CN106486560B (en) Plasma drop epitaxial GaAs quantum dot solar battery and its manufacturing method
CN109103268A (en) A kind of GaN base p-i-n UV detector structure and preparation method
CN210245515U (en) Deep ultraviolet MSM detector based on local surface plasmon effect
CN107170853A (en) A kind of preparation method of the GaN/CdZnTe thin film ultraviolet detectors of composite construction
KR101397451B1 (en) Synthesis method of cu(in,ga)se2 nanorod or nanowire and materials including of the same
CN208014712U (en) A kind of AlGaP base ultraviolet detectors
CN110690316A (en) GaN-MoO based on core-shell structure3Self-powered ultraviolet detector of nano-column and preparation method thereof
CN107541708B (en) The preparation method of mercury cadmium telluride thin film with one-dimensional nano-array structure

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination